TW488053B - Semiconductor package having implantable conductive lands and method for manufacturing the same - Google Patents

Semiconductor package having implantable conductive lands and method for manufacturing the same Download PDF

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Publication number
TW488053B
TW488053B TW089121929A TW89121929A TW488053B TW 488053 B TW488053 B TW 488053B TW 089121929 A TW089121929 A TW 089121929A TW 89121929 A TW89121929 A TW 89121929A TW 488053 B TW488053 B TW 488053B
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TW
Taiwan
Prior art keywords
semiconductor package
implantable conductive
implantable
conductive region
semiconductor
Prior art date
Application number
TW089121929A
Other languages
English (en)
Inventor
Heung-Su Gang
Original Assignee
Kostat Semiconductor Co Ltd
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Application filed by Kostat Semiconductor Co Ltd filed Critical Kostat Semiconductor Co Ltd
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Publication of TW488053B publication Critical patent/TW488053B/zh

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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Description

488053 發明說明( 發明背景 1·發明領域 本發明關於一種半導體封裝體及其製造方法,更特別 相關於一種不包括引線或使用焊料球取代引線框之晶片級 封裝體(CSP)。 ' 2·相關技藝說明 近來,諸如個人電腦、行動電話以及攝像機_錄像機組 合之電子產品在尺寸上變得更小而在處理容量上變得更 大。因此,要求一種小尺寸、大容量並順應有快處理速度 之半導體封裝體。所以,半導體封裝體已從包括雙直線排 列封裝體(DIP)之插放安裝型轉變成包括薄小型非對齊封 裝體(TSOP)、薄方形平坦封裝體(TQFp)及球格柵陣列 (BGA)之表面安裝型。 在表面安裝型之間,因為BGA能夠大大地縮小半導體 封裝體的尺寸與重量,並可在晶片級封裝體(csp)之間達到 相對高的品質與可靠度,故其已引起相當大的注意。 經濟部智慧財產局員工消費合作社印製 第1至3圖為例示使用剛性基材之傳統bgA封裝體的 結構圖。第1圖為使用剛性基材之傳統BGA封裝體的截面 圖。第2圖為傳統BGA封裝體部分裁去平面圖。第3圖為傳 統BGA封裝鱧之底面圖。 參考第1至3圖,在典型的BGA封裝體,一半導體封裝 體使用剛性基材1 〇取代引線框來被組裝。換言之,一半導 體晶片藉由晶粒連接環氧樹脂5而被連接至剛性基材1 〇之 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 4 488053 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(2) . 表面上。一被形成在剛性基材10上之連接指狀物2使用金線 - 4而被連接至半導體晶片6之連結墊上。在完成導線連接之 •後,剛性基材10與半導體晶片6與為密封樹脂7的環氧樹脂 模製化合物(EMC) —起被鑄造而成。其後,為外部連接端 子之焊料球13被連結至焊料球墊上,即在剛性基材1〇中透 過被形成在剛性基材10中之通孔9而將頂部連接至底部上 之電路圖案。 丨在圖式中,標號1表示被形成在剛性基材1〇之前方表面 上之焊料罩,標號3表示前傳導區,標號^表示後焊料罩, 而標號12表示一絕緣基材。在第3圖中,標號6,表示半導體 晶片6被連結至其上之位置處。 在使用剛性基材之傳導BGA封裝體中,必須形成通孔 9與刖、後傳導區’以供外部連接端子之連結之用。因為許 多中間連接端子被以此類的配置狀態形成在半導體封裝體 中,因此在半導體晶片中之連接墊與外部連接端子間的互 連長度太長,藉此使半導體封裝體的導電性。 此外’在半導體封裝體被完全組裝之後,被用來在剛 性基材10的前與後表面上進行傳導區之絕緣與保護之前與 後焊料罩1與11被分層,因而減少半導體封裝體的可靠性。 剛性基材10必須包括一絕緣基材12。在半導體封裝體 被元全組裝後’絕緣基材12留在半導體封裝體中。因此, 在半導體封裝體内之絕緣基材12的厚度抑制在bgA封裝 體厚度上的減少。 此外,許多其他的部分與剛性基材一起被封裝在半導 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------------裝 — II 訂·! ·線 (請先閱讀背面之注意事項再填寫本頁) 488053 經濟部智慧財產局員工消費合作社印制衣 Α7 Β7 五、發明說明(3) 體封裝體之内。因為在許多部分的熱膨脹係數間之差異所 造成的缺陷使半導體封裝體的可靠性變差。 第4至6圖為例示使用在此傳導區被形成於帶膜上之基 材的傳統BGA封裝體之結構圖。第4圖為例示使用在此傳 導區於帶膜上被形成之基材的傳統BGA封裝體之戴面 圖。第5圖為第4圖之部分載斷平面圖。第6圖為第4圖的底 面圖。 參考第4至6圖,傳導區被形成於其上之帶膜23被用來 取代剛性基材。傳導區被形成在由聚醯亞胺樹脂所形成之 帶膜23上,其係藉由穿孔或蝕刻程序以形成孔洞。具有傳 導區之帶膜23在組裝半導體封裝體中被作為基底基材。 因此,前焊料球罩21與後焊料罩28在帶膜23上被形 成,以供傳導區之絕緣與保護之用。包括前與後焊料罩21 與28之帶膜23在完成半導體封裝體組裝後留下來作為部分 的半導體封裝體。 在圖式中,標號22表示一連接指狀物,標號24表示金 導線,標號25表示晶粒連接環氧樹脂,標號26表示一半導 趙晶片,標號27表示一密封樹脂,標號29表示焊料球墊, 而標號30表示焊料球。在第6圖中,標號26,表示半導體晶 片26被連結至其上之位置處。 然而,使用傳導區被形成於其中之帶膜的傳統BGA封 裝體要求一諸如穿孔或姓刻之附加程序,以便形成將焊料 塾29連接至連結指狀物22上之孔。此外,在半導體封裝鱧 完成封裝後留在半導體封裝體内之帶膜23妨礙半導體封裝 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂· •線- 6 488053 發明說明( 體在厚度上的減少。再者,因為在帶膜23與被封裝在半導 體封裝體内之其他部分的熱膨脹係數之間的差異而造成各 種的缺陷,因而使半導體封裝體的可靠性變壞。 第7至9圖為例示傳統方形平坦無引線(QFN)封裝體之 結構圖。第7圓為傳統QFN封裝體的截面圖。第8圖為第7 圖之部分截斷平面圖。第9圖為第7圖的底面圖。 參考第7至9圖,一半導體晶片44藉由晶粒連搔環氧樹 脂43而被連結至一作為散熱片之晶片墊5〇上,並被連結至 僅包括内部引線之引線框49上,並且導線連結使用金導線 42而被執行。其後,引線框49與半導體晶片料與為emc之 密封樹脂45—起被鑄造而成。 在圖式中’標號51表示在此進行接地連結之區域,而 標號52表示在此進行平常的輸入/輸出端子之連結的區 域。標號53表示供半導體封裝體之輸入/輸出端子用之内部 引線,而標號54表示供接地端子用之内部引線。 然而,對於傳統QFN封裝體,引線框49應該被以銅或 銅合金形成,且此引線框49在完成半導體封裝體組裝後留 下來作為部分的半導體封裝體,因而妨礙半導體封裝體在 厚度上的減少。此外,在用以從一條半導體封裝體上分成 個別的半導體封裝體之單一化程序期間,非常困難分開包 括引線框49之半導體封裝體,因而造成許多缺陷。再者, 許多供輸入/輸出端子用之内部引線53限制其在半導體封 裝體中被配置的空間。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) I I » · I I (琦先閱讀背面之注意事項再填寫本頁) · 經濟部智慧財產局員工消費合作社印製 488053 —-------- B7__— 五、發明說明(5 ) 發明概要說明 為解決上述問題,本發明之一目的在於提供一種具有 可植入傳導區之半導體封裝體,以便簡化半導體封裝體之 製造’藉由減少原料的價錢而減少製造成本並改善半導體 封裝體之電氣、熱與機械性能。 本發明之第二目的為提供一種用以製造具有可植入傳 導區之半導體封裝體之方法。 因此’為達成本發明之第一目的,提供有一種具有可 植入傳導區並包括半導體封裝體主體之半導體封裝體該 半導艘封裝體包括一半導體晶片但不包括一引線框或一基 材於其中,且其係由一密封樹脂所形成;且可植入傳導區 係被連結至欲被暴露至外部的半導體封裝體之表面上,各 個可植入傳導區係被電氣地連接至半導體晶片之連接墊 上0 在一較佳實施例中,直到模製程序被完成之後,可植 入傳導區從一作為一基材之帶膜上被卸下。各可植入傳導 區的厚度在數個與數個nm之間,且其形狀為四邊形或 圓形。 經濟部智慧財產局員工消費合作社印制衣 半導體封裝體主體為一球格柵陣列型(BGA)、四邊平 坦無引線(QFN)型或一倒裝型。當半導體晶片透過導線被 連接至可植人傳導區上時,半導體晶片的底部較佳地使用 熱傳導晶粒接合環氧樹脂或導電晶粒接合環氧樹脂被連結 至可植入傳導區上,並且一用以導線接合之表面處理層較 佳地被形成在各個被連結至半導體封裝體主體上之可植入
488053 五 經濟部智慧財產局員工消費合作社印製 A7 B7 、發明說明(6) 傳導區之一側上。 當半導體封裝體主體為一BGA型或倒裝型時,外部連 接端子較佳被進一步地形成在不會接觸半導體封裝體主體 之可植入傳導區的側邊上。外部連接端子可以使用焊料塗 層或焊料球而被形成。 當半導體封裝體主鱧為倒裝型時,用以直接將半導體 晶片之接合墊連接至可植入傳導區之焊料凸緣較佳·被形成 在接合墊上。此外,一藉由將被連接至一焊料凸緣上之可 植入傳導區連接至一透過導線而被連接至一外部連接端子 上之可植入傳導區上而被形成之經延伸的可植入傳導區可 以被使用。 可植入傳導區包括供輸入/輸出端子用之可植入傳導 區、用以接地之可植入傳導區、供散熱片用之可植入傳導 區、以及供電力端子用之可植入傳導區。用以接地之可植 入傳導區及供散熱片用之可植入傳導區可以被相互連接, 並且供電力端子用之可植入傳導區可以被相互電氣連接。 為達成本發明之第二目的,提供有一種製造具有可植 入傳導區之半導體封裝體之方法。在該方法中,一半導體 晶片被連結至一暫時的基材上,其中可植入傳導區在一帶 膜上被形成。半導體晶片之接合墊被連接至可植入傳導區 上。其後,暫時基材與半導體晶片被以密封樹脂一起被模 製。帶膜被從經模製之合成結構上卸下,而在已經過模製 之半導體封裝體主體中留下可植入傳導區。 用以製造具有可植入傳導區之方法可以依據半導體封 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) ----------I--i — — — — —— — — — — — — (請先閱讀背面之注意事項再填寫本頁) 9 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明(7 ) 裝體之形式而被修正。 在本發明之一較佳實施例中,帶膜是由一帶體以及一 容易從可植入傳導區上卸下之黏著層所組成,該帶體係實 質作為一基材直至模製程序被完成。 一用以接合導線之表面處理層較佳被形成在各可植入 傳導區之一側上,並且可植入傳導區包括供外部連接端子 用之可植入傳導區以及供散熱片用之可植入傳導區.。 在模製程序中,一液化模製材料可以被一撒佈器散佈 至暫時基材上,或一熱固性樹脂可以使用模製設備被模製。 用以接地之可植入傳導區與供散熱片用之可植入傳導 區可以被相互連接,並且供電力端子用之可植入傳導區可 以被相互地電氣連接。 在另一較佳實施例中,從暫時基材將帶膜卸下之步驟 在模製步驟或單一化程序之後被執行。 根據本發明,一半導體封裝體可以被組裝,而不使用 諸如一帶膜或具有通孔或一引線框之剛性基材之昂貴材 料,因而簡化製造程序並減少製造成本。 另外,供散熱片用之可植入傳導區被直接地連結至欲 被暴露至外部中的半導體晶片上,藉此改善半導體封裝體 之熱性flb。因為在半導體晶片之接合塾與一外部連接端子 之間的電氣導線路徑可以被縮短,因此半導體封裝體之電 氣特性可以被改善。藉由從半導體封裝體上移除一基材或 引線框以及一 ^料罩’因為熱膨服係數間所造成的差異 與脫層,其係造成可靠度上的減少可以被抑制,並且半導 請 先 閱 讀二 背 tb 之 注· 意 事 項 再 填
訂 線 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 10 經濟部智慧財產局員工消費合作社印製 488053 A7 _____B7__ 五、發明說明(8 ) ^ 體封裝體的厚度可以被減少,藉此改善半導體封裝體之機 械特性。 圖式之簡短說明 本發明之上述目的與優點將因參考附呈圖式來詳細地 說明本發明之較佳實施例而變得更顯而易明,其中: 第1至3圖為例示使用一剛性基材之傳統球格,柵陣列 (BGA)封裝體的結構圖; 第4至6圖為例示使用一在此傳導區被形成在一帶膜上 之基材的傳統BGA封裝體之結構圖; 第7至9圖為例示傳統四邊平坦無引線(qfn)封裝體的 結構圖; 第10與11圖為用以說明具有可植入傳導區之半導體封 裝體之概念結構,以及根據本發明用以製造該半導體封裝 體之方法的截面圖; 第12與13圖為例示其上形成有被使用在本發明中之可 植入傳導區之帶膜的結構平面圖; 第14圖為說明其上形成有被使用在本發明中之可植入 傳導區之帶膜的結構截面圖; 第15圖為說明在其上被形成有被使用在本發明中之可 植入傳導區之帶膜上之可植入傳導區之經轉變形狀的平面 圖; 第16至2 2圖為例不根據本發明第一實施例之半導體封 裝體之結構及其製造方法之圖; I - I I I — I I I e i I I I I I I (請先閱讀背面之注意事項再填寫本頁)
11 . A7 B7__ 五、發明說明(9 ) 第23至28圖為例示根據本發明第二實施例之半導體封 裝體之結構及其製造方法之圖; 第29至34圖為例示根據本發明第三實施例之半導體封 裝體之結構及其製造方法之圖。 本發明之掸細說明 其後’本發明之較佳實施例將會參考附呈圖案·而做詳 細地說明。 經濟部智慧財產局員工消費合作社印製 在本說明書中,半導體封裝體主體被使用在多數總括 性的意義上,並不被限制於被說明在下列實施例中之特定 的半導體封裝體上。換言之,本發明可以被應用至任何一 種可以使用可植入傳導區而被組裝之半導體封裝體之形式 上。將被陳述之實施例可以被修正,而不背離本發明之精 神與貫質的特徵。例如,在本發明之較佳實施例中可植入 傳導區之形狀為四邊形或圓形,但可以被修正成為准許外 部連接端子的導線接合與連結之不同的形狀。不同的接合 半導體晶片與接合導線及鑄造之方法可以被用來取代將在 下列較佳實施例中被說明的方法。所以,較佳實施例將僅 在說明性的意義上被揭露,而不供限制之目的之用。 第10與11圖為用以說明具有可植入傳導區之半導體封 裝體之概念結構,以及根據本發明用以製造該半導體封裝 體之方法的戴面圖。參考第10圖,本發明之半導體封裝體 包括一半導體封裝體主體101及可植入傳導區112,該等可 植入傳導區係分別被連結至欲被曝入至外部中之半導體 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 12 488053 A7 B7 經濟部智慧財產局員工消費合作社印制衣 五、發明說明( 裝體主體101之表面上並電氣地連接至被設置在半導體封 裝體主體101内之半導體晶片之接合墊上。 半導體封裝體主體101之形狀可依據半導體封裝體之 形式而被修正成各種其他的形狀。半導體封裝體主體101 主要包括一半導體晶片100並具有一個准許半導體晶片100 被連接至可植入傳導區112上之結構。一可植入傳導區112 可作為用以輸入/輸出之正規的外部連接端子,可作為接地 端子,可作為電力端子或一散熱片114。 當半導體晶片100之接合墊分別透過金導線1〇6被連接 至可植入傳導區112上時,半導體晶片100的底部被以熱傳 導或導線晶粒接合環氧樹脂1〇2接合至接地可植入傳導區 或散熱片可植入傳導區114上。一用以接合導線之表面處理 層(第14圖的142)較佳地在各個被連結至半導體封裝體主 體101上之可植入傳導區之其中一個側邊上被形成。表面處 理層較佳被由金、銀、把或包括金、銀與纪之化合物形成。 當導線接合在未形成表面處理層的情況下可以被達成時, 表面處理層可以不被形成。 本發明其中一個最重要的特徵是可植入傳導區112與 114被從根據本發明之帶膜ι10上取下,並在半導體封裝體 101之表面上·被形成。因此,半導體封裝體之内部結構可以 被顯著地簡化,並且半導體封裝體不具有剛性基材、帶薄 膜型基材或引線框。 參考第11圖,在可植入傳導區1丨2之間,接地可植入傳 導區與散熱片可植入傳導區被組構成共同的形式,因而變 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) I I ^ i — — — — — — ^> — — — — — 1 — (請先閱讀背面之注意事項再填寫本頁) 13 488053 A7 B7 五、發明說明(11) 成一經修正之散熱片可植入傳導區114,。 參考第1圖,下列之說明關於一根據本發明用以製造具 有可植入傳導區之半導體封裝鱧之方法。 一半導體晶片100被接合至一暫時的基材上,其上可植 入傳導區112在一帶膜110上被形成。在此,一在組裝半導 體封裝體中之晶粒連結程序會隨著半導體封裝體之形式而 變化。 例如,在倒裝式封裝體的情況下,一焊料凸緣在半導 體晶片100之各接合墊上被形成,並且焊料凸緣被直接地連 結至可植入傳導區112上,以便將半導體晶片1〇〇接合至暫 時的基材上。更替地,在球格柵陣列(BGA)封裝體或四邊 平坦無引線(QFN)封裝體的情況下,半導體晶片1〇〇之底部 被以熱傳導或導電晶粒接合環氧樹脂1〇2接合至經修正之 散熱片可植入傳導區114,之表面上,一使用金導線1〇6而將 半導體晶片100之接合墊連接至其上分別具有表面處理層 之可植入傳導區112上之額外的導線接合程序被執行。 隨後,半導體晶片被接合至其上之暫時的基材使用諸 如環氧樹脂模製化合物(EMC)之密封樹脂〗〇4被鑄造❶在模 經濟部智慧財產局員工消費合作社印製 製程序中,取代密封樹脂,經液化的密封樹脂丨〇4可以被一 撒佈器散佈至具有半導體晶片之暫時的基材上,接著並被 硬化,或是熱固性密封樹脂104可以使用一般的模製設備來 被鑄造。因此,在製造半導體封裝體中從晶粒連結至模製 之程序可以隨半導體封裝體之形式與被使用之原料形式而 變化。
4^8053 A7
五、發明說明(12 ) 經濟部智慧財產局員工消費合作社印製 最後’使用作為暫時基材之帶膜11 〇被去除在模製程序 之後所得到之合成結構。從基材上將帶膜110取下之程序在 模製或之後的單一化程序之後被立即地執行。 第12與13圖為例示其上形成有被使用在本發明中之可 植入傳導區之帶膜的結構圖。第12圖例示被使用在第1 〇圖 中之帶膜之形狀。第13圖例示被使用在第U圖中之帶膜的 形狀。在圖式中,標號112A表示供作為一輸入/輸出.端子之 外部連接端子用之圓形可植入傳導區。標號112B表示供一 作為輸入/輸出端子之外部連接端子用之矩形可植入傳導 區。標號114表示未被與一接地可植入傳導區連接之散熱片 可植入傳導區。標號114,表示被電氣地連接至一接地可楂 入傳導區之經修正的散熱片可植入傳導區。標號丨26表示一 半導體晶片被接合至其上之區域。 可植入傳導區112A、112B、114及114,被由銅或包括 銅之合金形成,並具有圓形或矩形形狀,或可以具有任何 准許外部連接端子進行導線接合與連結之形狀。可植入傳 導區112A、112B、114、及114’的厚度可以隨著使用者的 要求,在數個# m至數個nm範圍内作變化。 在第12與13圖中,一具有供單一半導體封裝體用之可 植入傳導區112A、112B、114、及114’之帶膜11〇被例示, 但一條具有與第12與13圖所示者相同形狀,並被在水平與 垂直方向上被設置之複數個帶膜可以被設計,以便藉由在 製造半導體封裝體中被使用之組裝設備而被製造。 在製造具有可植入傳導區112A、112B、114、114’之 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 15 488053 五、發明說明(13 帶膜110中,可植入傳導區112A、112B、114、114,可以藉 由光罩方法,藉由網板印刷方法,藉由選取並置放個別的 傳導區並接合該等傳導區,或藉由沉積或電鍍方法而被形 成在帶膜110上。 第14圖為用以說明其上被形成有被使用在本發明中之 可植入傳導區之帶膜的結構截面圖。第14圓之結構被由一 可植入傳導區112與一帶膜no組成。可植入傳導區112藉由 形成一表面處理層142而被構築,以便在傳導區主體14〇之 表面上進行導線接合。帶膜110被由一帶主體13〇與一被形 成於帶主體130上並便於從可植入傳導區112上取下之黏著 層132組成。 在此,黏著層132為一准許具有根據本發明之半導體封 裝體之結構並實現其製造方法之重要的構件。在傳統剛性 基材或傳統具有一被穿孔或姓刻方式形成之通孔之帶膜 中’傳導區與一絕緣基材使用諸如盼基或聚醒亞胺基之環 氧樹脂而被持久地疊層,使得其不會被輕易地取下,但因 為從一基材上傳導區之層離在製造半導體封裝體中會導致 不可避免的缺陷。 然而,根據本發明在帶膜110中之黏著層132根據與使 用傳統之黏著層不同的想法而被使用。換言之,因為帶膜 110假定在本發明中之膜製程序後,可從半導體封裝體主體 上輕易地取下,因此黏著層132被由以矽酮為主之黏著劑形 成’來取代酚或聚醯亞胺環氧樹脂,使得當可植入傳導區 112之頂部因為導線接合之力與在模製程序後膜製之黏著 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 請 先 閱 讀· 背· 面 之 注* 意 事 項 再 填 · !祕 訂 線 經濟部智慧財產局員工消費合作社印制衣 16 A7
488053 五、發明說明( • 力而被固定至半導體封裝體主體上時,僅有帶獏110從半導 體封裝體上取下,而留下可植入傳導區112 ,如第1〇與】j - 圖所示者般。 在帶膜110中之帶主體130可以由任何具有抵抗在製造 半導體封裝體中之帶接合、導線接合及膜製期間所產生之 熱、壓力、化學物質之抵抗性的材料而形成。換言之紙 張、諸如聚醯亞胺之聚合物、金屬或包括紙張、聚合物及 金屬之化合物可以被使用。 因為其上被形成有被使用在本發明中之可楂入傳導區 之帶膜具有簡單之結構,且不被要求如傳統剛性基材或具 有藉由穿孔或蝕刻而被形成之通孔之基材般被改進,故其 能夠以低成本來被製造。因此,相較於使用昂貴的剛性基 材與引線框之傳統技術’本發明能夠大大地減少在組裝半 導體封裝體中之成本。 第15圖為用以說明其上被形成有被使用在本發明中之 可植入傳導區之帶膜上之可植入傳導區之經轉變形狀的平 面圖。參考第15圖,在可植入傳導區Π2Α之間,作為電力 端子之可植入傳導區113被連接,藉此形成其中電力端子被 連接之可植入傳導區。此使在半導體封裝體中之電力端子 穩定。在此實施例中,四個電力端子被整合成一個,但顯 而易見的是各種修正可以被進行。 第一實施例:BGA封奘艚 第16至22圖為例示根據本發明第一實施例之半導體封 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) — — — — — — — — — — — — — ·1111111 ·11111111 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 17 488053
五、發明說明(15) 裝體之結構圖,及其製造方法。參考第16圖,根據本發明 第一實施例之半導體封裝體包括一半導體晶片1〇〇; _包 括用以接合半導體晶片1〇〇的底部之熱傳導或導電晶粒接 合環氧樹脂102、金導線1〇6及環氧樹脂模製化合物之密封 樹脂104之半導體封裝體主體1〇2;以及包括散熱片可植入 傳導區114之可植入傳導區112。 金導線1〇6將可植入傳導區112連接至半導體晶片1〇〇 之個別的連接墊上。熱傳導或導線晶粒接合環氧樹脂1〇2 直接將半導體晶片1〇〇連接至散熱片可植入傳導區j 14上。 例示於第17圖中之半導體封裝體之結構與第16圖所例示者 相同,除了在可植入傳導區間之散熱片傳導區被整合成一 單一經修正的散熱片可植入傳導區114,,因此前述說明將 不會被重複。經修正的散熱片可植入傳導區114,具有可以 使從半導體晶片100中所產生的熱被有效地放出至外側之 結構。此外,經修正的散熱片可植入傳導區114,之厚度當 必要時可以被修正。 經濟部智慧財產局員工消費合作社印製 參考第18與19圖,根據本發明之半導體封裝體可進一 步地包括被連接至散熱片可植入傳導區114與輸入/輸出可 植入傳導區112上之外部連接端子。各個外部連接端子可以 被形成為一焊料塗層116,如第is圖所示,或被形成為一焊 料求118,如第19圖所示。 第20圖為例示製造包括根據本發明第一實施例之可植 入傳導區之半導體封裝體之方法的流程圖。參考第2〇圖, 一在鋸裁程序後所得到之半導體晶片被連接至一帶膜(第 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 18 A7
經濟部智慧財產局員工消費合作社印製 五、發明說明(16 ) 13圖之110)上,其上可植入傳導區根據本發明而被形成。 一熱傳導或導電晶粒接合環氧樹脂較佳被用來連結丰導體 晶片。半導體晶片較佳地被連結至一經修正的散熱片可楂 入傳導區(第13圖之114’)被設置於此之部位上。其後,一 固化程序被執行以從晶粒接合環氧樹脂與經硬化之晶粒接 合環氧樹脂中將揮發性物質移除。 接下來,用以將半導體晶片之各接合墊電氣地連接至 可植入傳導區上之導線接合程序被執行。在此,一表面處 理層較佳地被形成在供導線接合用之各可植入傳導區之表 面上。 在導線接合程序後所得到的合成結構使用密封樹脂被 模製設備模製而成《模具較佳具有擁有平坦表面之一單一 空腔形式’而不是具有複數個空腔之傳統形式。因此,可 以儉省供模式設備用之成本。 接著,帶膜在完成模製後被從半導體封裝體主體上卸 下。在此,可植入傳導區未被卸下,且因為模製黏著力、 晶粒接合樹脂黏著力、及導線接合黏著力而被固定至半導 體封裝體主體上。一使用雷射產生記號之程序在移除帶膜 後所得到之合成結構上被執行,接著作為外部連接端子之 焊料球被連結至可植入傳導區之經暴露的底部上。其後, 將個別的半導體封裝體從一條半導體封裝體上取下之單一 化程序被執行。 第21與22圖為例示包括可植入傳導區之半導體封裝體 之部分載斷平面圖,該等半導體封裝體系被上述之製造方 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公楚) I 1 t I ! I ! I — — II — I ..1 (請先閱讀背面之注意事項再填寫本頁) 19 488053 A7 五、發明說明( 17 經濟部智慧財產局員工消費合作社印製 法完成。第21圖例示形式為散熱片可植入傳導區未被相互 連接之半導體封裝體,如第16圖所示,並且第22圓例示形 式為散熱片可植入傳導區被連接且被整合成一單一經修正 之散熱片可植入傳導區114,之半導體封裝體,如第17圖所 不。在該等圖式中,標號104表示密封樹脂,而標號1〇6表 示金導線。 簋二實施例·· OFN封奘艚 第23至28圖為例示根據本發明第二實施例之半導體裝 體之結構及其製造方法圖。 參考第23至25圖,因為本發明使用包括可植入傳導區 之帶膜來取代傳導引線框,因此QFN型半導體封裝體之结 構幾乎與第一實施例相同,故其說明被省略。為了清楚地 了解,標號的最後一位數被設定成與第一實施例中所使用 的數字相同。 第26圖為例是製造包括根據本發明第二實施例之可植 入傳導區之半導體封裝體之方法。參考第26圖,一晶粒接 合程序與一接合導線程序被以與第一實施例相同之方式進 行。接下來’一晶粒接合環氧樹脂在包含於晶粒接合環氧 樹脂中之揮發性被固化程序移除的同時被硬化。其後,一 模製程序、一產生記號程序、及一單一化程序藉由典型的 方法被貫續地進行。最後,一帶膜在單一化程序後被從一 半導體封裝體上卸下。第二實施力與第一實施例不同處在 於卸下帶膜之程序在單一化程序之後被進行,而不在模製
訂 線 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -20 488053 五 經濟部智慧財產局員工消費合作社印製 A7 B7 發明說明() 程序之後。 相較於傳統使用引線框之方法,因為根據本發明之半 導體封裝體不包括引線框,因此在單一化程序中容易將一 條半導體封裝體切割成個別的半導體封裝體,並且在一半 導體封裝體内的輸入/輸出之位置可以被輕易地設計,即使 是在大量的輸入/輸出端子被使用的情況下。 第27圖為例示形式為散熱片可植入傳導區未被相互連 接之半導體封裝體的部分截斷平面圖,如第23圖所示。第 28圖為例示形式為散熱片可植入傳導區被連接並被整合成 單一個之半導體封裝體的部分截斷平面圖,如第24圖所 示。在該等圖式中,標號204表示密封樹脂,標號2〇6表示 金導線’而標號212表示輸入/輸出植入傳導區。 篇三實施例:倒裝式封养體 第29至34圖為例示根據本發明第三實施例之半導體封 裝體之結構及其製造方法圖。 第29圖為例示包括根據本發明第三實施例之可植入傳 導區之半導體封裝體之結構截面圖。一根據本發明第三實 施粒之半導體封裝體由一半導體封裝體主體3〇1及可植入 傳導區3 12組成,如第一與第二實施例般。然而,半導體封 裝體主體301之内部形狀與第一及第二實施例不同。換言 之’第三實施例之半導體封裝體不包括金導線與晶粒接合 環氧樹脂。一從半導體晶片之各個接合墊伸出之焊料凸緣 308被設置以便直接地與可植入傳導區312連接。參考第3〇 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) — — — — —— — — — — — I· _ I I I I I I I II 繼 11111 ^^ (請先閱讀背面之注意事項再填寫本頁) 21 488053 A7 B7 五、發明說明(19) 與31圖,根據本發明第三實施粒之半導體封裝體可進一步 地包括一被連接至各個可植入傳導區312上之外部連接端 子。各個外部連接端子可使用第30圖之焊料塗層316或第31 圖之焊料球318而被形成。 第32圖為例示一包括被延伸之可植入傳導區之帶膜的 平面圖。參考第32圖,當在被形成於一半導體晶片上之接 合墊間之間隙窄時,一經延伸之可植入傳導區3 12 可以被 使用。經延伸之可植入傳導區312,包括一個被連接至一焊 料凸緣上之部位312B以及一個被連接至一外部連接端子 上之部位312A,並且該等兩部位透過一導線而被連接。因 此,可植入傳導區312,可以從一個被連接至一焊料凸緣上 之部位延伸至一個被連接至一外部連接端子上之部位處。 在該等圖式中,標號110表示一帶膜。 第3 3圖為例示製造具有根據本發明第三實施例之可植 入傳導區之半導體封裝體之方法。第34圖為例示一半導趙 晶片如何被接合至一具有可植入傳導區之帶膜上的截面 圖。 經濟部智慧財產局員工消費合作社印製 參考第33與34圖,一伸出的焊料凸緣308在一半導體晶 片300之各接合墊上被形成,不似第一與第二實施例般,半 導體晶片上部被翻轉並且被接合至一具有可植入傳導區 112之帶膜110上。隨後,一模製程序使用一密封樹脂、一 %氧樹脂模製化合物而被進行’接著帶膜1 1 〇被從一暫時芙 材上卸下。其後,一產生記號程序、一用以連結作為外部 連接之焊料球、及一單一化程序藉由典型的方法被貫續地 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 22 488053
五、發明說明(20) 經濟部智慧財產局員工消費合作社印制衣 進行,藉此完成半導體封裝體。 根據本發明,首先,用以組裝半導體封裝體之成本可 以被減少。因為本發明部使用昂貴的基材或引線框,因此 用以組裝半導體封裝體之成本可以被減少。此外,因為傳 統的生產設備不需修正便可使用,故不需額外供設備用之 投資。亦可以簡化製造程序。例如,當作為一外部連接端 子之焊料塗層在相對於具有一表面處理層於其上之表面的 表面上被形成時’事先在各個可植入傳導區中,形成外部 連接端子之程序可以被移除。在另一例示中,若取代平支曰 單一空腔型模具時,一具有複數個空腔之模具在模製程序 期間可以被使用,之後的單一化程序可以被移除。此外, 因為製造程序可以被輕易地執行,所以用以組裝半導體封 裝體之成本可以被降低。換言之,根據本發明之QFN封裝 體不會包括諸如引線框之難以切割之原料,使得在單一化 程序期間所形成的缺陷可以被減少。此外,一具有複數個 空腔之傳統模具不需要被使用,並且平坦單一空腔型模具 可以被使用,藉此便於一模製程序。 第二’ 一半導體封裝體之性能可以被改善。因為根據 本發明之散熱片可植入傳導區被直接地連接至半導體晶片 上並被暴露至外部中,因此半導體封裝體的熱特性可以被 改善。此外,一被使用在傳統技術中諸如通孔或電路圖案 之中間連接端子未被使用,因此連接接合塾與外部連接端 子之導線的長度可以被縮短,藉此改善半導體封裝體之電 氣特徵。此外,因為既不是剛性基材也不是引線框,帶膜 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ^-----i^^i —--— II (請先《讀背面之注意事項再填寫本頁) 23 488053 五 A7 B7 發明說明(21 ) 型基材被形成在半導體封裝體之内,半導體封裝體的厚度 可以被減少,藉此改善半導體封裝體的機械特性。 最後’半導體封裝趙之可靠度可以被改善。更具體地, 因為在半導體封裝體中形成許多層而造成的脫層問題可以 被避免,並且因為在基材或引線框與其他部分的熱膨脹係 數間的差異在半導艘封裝體内所造成的程序缺陷可以被減 少。此外,半導體封裝體之製造程序簡單且容易,.·藉此改 善半導體封裝體的可靠度。 雖然,本發明已參考特定的實施例而作說明,但對於 熟習此技者將顯而易明的是對於經說明實施例之修正可被 進行,而不會背離本發明之精神與範圍。 請 先 閱 讀: 背 面 之 注· 意 事 項 再 填
訂 元件標號對照表 經濟部智慧財產局員工消費合作社印製 1 前焊料罩 2 連接指狀物 3 前傳導區 4 金線 5 晶粒連接環氧樹脂 6 半導體晶片 7 密封樹脂 9 通孔 10 剛性基材 11 後焊料罩 12 絕緣基材 13 焊料球 21 前焊料球罩 22 連接指狀物 23 帶膜 24 金導線 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公釐) 24 488053 A7 B7 五 發明說明(22 J 25晶粒連接環氧樹脂 27密封樹脂 29 焊料球墊 44半導體晶片 49引線框 51 區域 53 内部引線 26 半導體晶片 28 前焊料球罩 43 晶粒連接環氧樹脂 45 密封樹脂 晶片墊 區域 50 52 經濟部智慧財產局員工消費合作社印製 54 内部引線 100 半導體晶片 101 半導體封裝體主體 102 晶粒接合環氧樹脂 104 密封樹脂 106 金導線 110 帶膜 112 可楂入傳導區 112A圓形可植入傳導區 112B矩形可植入傳導區 114 可植入傳導區 114, 可植入傳導區 130 帶主體 132 黏著層 140 傳導區主體 142 表面處理層 204 密封樹脂 206 金導線 212 輸入/輸出植入傳導區 300 半導體晶片 301 半導體封裝體主體 308 焊料凸緣 312 可植入傳導區 312, 可植入傳導區 316 焊料塗層 318 焊料球 142 表面處理層 本紙張尺度適用中國國家標準(CNS〉A4規格(210 X 297公爱) ------------ 裝·!1 訂-----— II -線 {請先閱讀背面之注意事項再填寫本頁) 25

Claims (1)

  1. AS cBs8 —_ _ D8 --------- 六、申請專利範圍 L 一種具有可植入傳導區之半導體封裝體,該半導體封 裝體係包含: 一包括帶有複數個接合墊但未包括一引線框或— 基材於其中之半導體封裝體主體,該半導體封裝體主 體係由一密封樹脂所形成;以及 被連結至欲被暴露至外部中之該半導體封裝趙之 該表面上的可植入傳導區,各該等可植入傳導,區係被 電氣地連接至該半導體晶片之一接合墊上。 2·如申請專利範圍第1項之半導體封裝體,其中該等可植 入傳導區被從一作為一基材直至模製程序被完成為止 之帶膜上卸下。 3·如申請專利範圍第1項之半導體封裝體,其中各該等可 植入傳導區之厚度在數個#πι與數個之間,且其形 狀為四邊形或圓形之其中一者。 4·如申印專利犯圍第1項之半導趙封裝體,其中在該等可 植入傳導區之間,該等作為接地端子或散熱片之可植 入傳導區係被相互地電氣連接。 經濟部智慧財產局員工消費合作社印製 5.如申請專利範圍第1項之半導體封裝體,其中在該等可 植入傳導區之間,該等作為電氣端子之可植入傳導區 被相互地電氣連接。 6·如申請專利範圍第1項之半導體封裝體,係進一步包含 被連結至該等可植入傳導區上之外部連接端子。 7·如申請專利範圍第6項之半導體封裝體,其中該等外部 連接端子為焊料塗層或焊料球。 本紙張τ _家標準(CNS;;.A4規格⑽χ 297公楚) -26- 488053 ASBSC8D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 .8.如中請專利範圍第1項之半導㈣裝趙,其中該半導趙 封裝體主體為球格柵陣列(BGA)型與四邊平坦無引線 (QFN)型之其中一者。 9.如申請專利ϋ圍第8項之半導趙封裝趙,其中該等可植 入傳導區透過導㈣連接至該半導趙晶片之該等連接 墊上。 10·如申請專利範圍第8項之半導體封裝體,其中一用以導 線接合之表面處理層被形成在各個被連結至該半導趙 封裝體主體上之可植入傳導區之一側上。 11 ·如申明專利犯圍第8項之半導趙封裝體,其中該半導趙 晶片之底部使用一熱傳導接合晶粒環氧樹脂或一導電 接合晶粒環氧樹脂而被連結至可植入傳導區上。 12·如申呀專利犯圍第1項之半導禮封裝體,其中該半導趙 封裝體主體為一倒裝型。 13·如申請專利範圍第12項之半導體封裝體,其中一焊料 凸緣在該半導體晶片之各接合墊上被形成。 14·如申請專利範圍第12項之半導體封裝體,其中一被連 接至一焊料凸緣上之可植入傳導區透過一導線而被連 接至一被連接至外部連接端子上之可植入傳導區上, 藉此形成一經延伸的可植入傳導區。 15. —種製造具有可植入傳導區之半導體封裝體之方法, 該方法係包含下列步驟: 將一半導體晶片連結至一暫時基材上,其中該等 可植入傳導區在一帶膜上被形成; 請 先 閱 讀 背 ft 之 意 事 項 再 填 寫 本 頁 裝 訂 ▲ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 27 AS i —---- D8 ___ 六、申請專利範圍 模製至其上連、结有該半導體晶片之該暫時基材 上;以及 從該經模製之合成結構上卸下該帶膜。 16·如申請專利範圍第15項之方法,其中在將該半導體晶 片連結至該暫時基材上之步驟中,該半導體晶片之底 邛使用一熱傳導接合晶粒環氧樹脂或一導電接合晶粒 環氧樹脂而被接合至該暫時基材上。 7·如申研專利犯圍第16項之方法,其在將該半導體晶片 連結至該暫時基材上之步驟之後,係進一步包含使用 導線將該半導體晶片之該等接合墊接合至該等可植入 傳導區之步驟。 18·如申请專利蛇圍第15項之方法,其中在模製該暫時基 材之步驟中,包括藉由撒佈機而將經液化模製材料散 佈至該暫時基材上或使用模製設備來模製熱固性樹脂 之步驟的其中一者。 19·如申請專利範圍第15項之方法,其中該暫時基材之帶 膜包含一實質作為基材之帶主體以及一容易從該等可 植入傳導區被卸下之黏著層。 20.如申請專利範圍第17項之方法,其中一供接合導線用 之表面處理層在各可植入傳導區之表面上被形成。 21·如申請專利範圍第μ項之方法,其中該等可植入傳導 區包括供外部連接端子用之可植入傳導區及供散熱片 用之可植入傳導區。 22·如申請專利範圍第15項之方法,其中在將該半導體基 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫 裝私· •線· 經濟部智慧財產局員工消費合作社印製 28 經濟部智慧財產局員工消費合作社印製
    488053 AS BS _ §1 _______________ 六、申請專利範圍 . 材連結至該暫時基材上之步驟中時,焊料凸緣在該半 - 導體基材之該等接合墊上被形成,並且該半導體晶片 被連結至該暫時基材上,使得焊料凸緣被連接至該可 植入傳導區上。 23·如申請專利範圍第22項之方法,其中一被連接至一焊 料凸緣上之可植入傳導區透過一導線被連接至一被連 接至一外部連接端子上之可植入傳導區上。 24·如申請專利範圍第15項之方法,其中將該帶膜從該暫 時基材卸下之步驟在模製或單一化程序之其中一者後 被執行。 25. —種製造具有可植入傳導區之半導體封裝體之方法, 該方法係包含·· 一將半導體晶片之底部連結至其上可植入傳導區 被形成在一帶膜上之暫時基材上的第一步驟; 一將該半導體晶片之該等接合墊連接至該等可植 入傳導區上之第二步驟; 一在接合導線後模製所得之結構以形成一半導體 主體之第三步驟; 一將作為該暫時基材之帶膜從已被進行模製步驟 之半導禮封裝體主體上卸下,在半導體封裝體主體中 留下該等可植入傳導區之第四步驟; 一在該等被固定在該半導鱧封裝體主體中之可植 入傳導區上形成外部連接端子之第五步驟;以及 一從一條具有該等外部連接端子之半導體封裝體 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) --------^---------線 (請先閱讀背面之注意事項再填寫本頁) -29 - AS BS cs -_____D8 -----~------ 六、申請專利範圍 上取下個別的半導體封裝體之第六步驟。 26.如申請專利範圍第25項之方法,其中該等可植入傳導 區包括供外部連接端子用之可植入傳導區以及供散熱 片用之可植入傳導區。 ' 27·如申請專利範圍第25項之方法,其中形成該等連接端 子之步驟在該等供外部連接端子用之可植入傳導區上 形成焊料球或焊料塗層。 28· —種製造具有可植入傳導區之半導體封裝體之方法, 該方法係包含: 一將半導體晶片之底部連結至其中可植入傳導區 被形成在一帶膜上之暫時基材上的第一步驟; 一使用導線將該半導體晶片之該等接合塾連接至 該等可楂入傳導區上之第二步驟; 一在導線接合之後模製所得之結構之第三步驟; 一從一條已進行模製步驟之半導體封裝體主體上 取下個別的半導體封裝體主體之第四步驟;以及 經濟部智慧財產局員工消費合作社印製 一將作為該暫時基材之帶膜從該個別的半導體封 裝體主體上卸下,在半導體封裝體主體中留下該等可 植入傳導區之第五步驟。 29.如申請專利範圍第28項之方法,其中該等可植入傳導 區包括供外部連接端子用之可植入傳導區及供散熱片 用之可植入傳導區。 30· —種製造具有可植入傳導區之半導體封裝體之方法, 該方法係包含: 本紙張尺度適用中國國家標準(CNS)A4規格(21〇χ297公爱) 30 488053 六、申請專利範圍 , 一將一半導體晶片連結至其中可植入傳導區在一 、冑膜上被形成之暫時基材i,使得半導體晶片之接合 墊被直接地連接至該等可植入傳導區上之第一步驟; 杈製至其上連接有該半導體晶片之該暫時基材 上,以形成一半導體封裝體主體之第二步驟; 一在模製步驟後將作為該暫時基材之帶膜從該半 導體封裝體主體上卸下,而在該半導體封裝體.·主體中 留下該等可植入傳導區之第三步驟; 一在被固定在該半導體封裝體主體中之該等可植 入傳導區上形成外部連接端子之第四步驟;以及 一從一條具有該等外部連接端子之該等半導體封 裝體主體上取下個別的半導體封裝體主體之第五步 驟。 3 1 ·如申研專利範圍第3〇項之方法,其中伸出之焊料凸緣 在该半導體晶片之該等接合墊上被形成。 經濟部智慧財產局員工消費合作社印製 32·如申明專利圍第3〇項之方法,其中一被連接至一焊 料凸緣上之可植入傳導區透過一導線被連接至一被連 接至一外部連接端子上之可植入傳導區上,藉此形成 一經延伸之可植入傳導區。 本紙張尺度適用中闕家標準(CNS)A4規格(2〗G X 297公爱) 31
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US6429508B1 (en) 2002-08-06
JP2002057241A (ja) 2002-02-22
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US20020041019A1 (en) 2002-04-11

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