TW456106B - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

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Publication number
TW456106B
TW456106B TW089115797A TW89115797A TW456106B TW 456106 B TW456106 B TW 456106B TW 089115797 A TW089115797 A TW 089115797A TW 89115797 A TW89115797 A TW 89115797A TW 456106 B TW456106 B TW 456106B
Authority
TW
Taiwan
Prior art keywords
circuit
voltage
aforementioned
voltage supply
supply node
Prior art date
Application number
TW089115797A
Other languages
English (en)
Chinese (zh)
Inventor
Tsukasa Ooishi
Jun Setogawa
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW456106B publication Critical patent/TW456106B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
TW089115797A 1999-09-02 2000-08-05 Semiconductor memory device TW456106B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24858099A JP4822572B2 (ja) 1999-09-02 1999-09-02 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW456106B true TW456106B (en) 2001-09-21

Family

ID=17180251

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089115797A TW456106B (en) 1999-09-02 2000-08-05 Semiconductor memory device

Country Status (4)

Country Link
US (3) US6201754B1 (enExample)
JP (1) JP4822572B2 (enExample)
KR (1) KR100381492B1 (enExample)
TW (1) TW456106B (enExample)

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US20040085845A1 (en) * 2002-10-31 2004-05-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit
US6940777B2 (en) * 2002-10-31 2005-09-06 Renesas Technology Corp. Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit
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US7142477B1 (en) * 2004-06-18 2006-11-28 Cypress Semiconductor Corp. Memory interface system and method for reducing cycle time of sequential read and write accesses using separate address and data buses
US7154794B2 (en) * 2004-10-08 2006-12-26 Lexmark International, Inc. Memory regulator system with test mode
US7170810B1 (en) * 2005-06-16 2007-01-30 Altera Corporation Stable programming circuitry for programmable integrated circuits
US7248531B2 (en) * 2005-08-03 2007-07-24 Mosaid Technologies Incorporated Voltage down converter for high speed memory
US20070171735A1 (en) * 2006-01-25 2007-07-26 Jong-Hoon Oh Latency circuit for semiconductor memories
KR100855969B1 (ko) * 2007-01-10 2008-09-02 삼성전자주식회사 반도체 메모리장치의 내부 전원전압 발생기
WO2008153645A2 (en) 2007-05-29 2008-12-18 Rambus, Inc. Memory comprising : clock generator, clock circuit, voltage regulator
EP2006696A1 (en) * 2007-06-20 2008-12-24 Nxp B.V. Testable integrated circuit and test method
KR20080113969A (ko) * 2007-06-26 2008-12-31 주식회사 하이닉스반도체 동시 테스트 모드를 지원하는 테스트 회로
US8014214B2 (en) * 2007-11-08 2011-09-06 Hynix Semiconductor Inc. Semiconductor memory device
US8149643B2 (en) * 2008-10-23 2012-04-03 Cypress Semiconductor Corporation Memory device and method
US8188786B2 (en) * 2009-09-24 2012-05-29 International Business Machines Corporation Modularized three-dimensional capacitor array
US9230690B2 (en) * 2012-11-07 2016-01-05 Apple Inc. Register file write ring oscillator
KR102032230B1 (ko) * 2013-08-01 2019-10-16 에스케이하이닉스 주식회사 반도체 장치
KR20240067516A (ko) * 2022-11-09 2024-05-17 삼성전자주식회사 메모리 장치 및 그의 동작 방법

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Also Published As

Publication number Publication date
JP4822572B2 (ja) 2011-11-24
US6606274B2 (en) 2003-08-12
KR20010030218A (ko) 2001-04-16
JP2001076484A (ja) 2001-03-23
US6337828B2 (en) 2002-01-08
US20010002175A1 (en) 2001-05-31
US20020054532A1 (en) 2002-05-09
KR100381492B1 (ko) 2003-04-23
US6201754B1 (en) 2001-03-13

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees