KR100381492B1 - 안정된 전원 전압을 공급하는 기능을 구비한 반도체 기억장치 - Google Patents

안정된 전원 전압을 공급하는 기능을 구비한 반도체 기억장치 Download PDF

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Publication number
KR100381492B1
KR100381492B1 KR10-2000-0051515A KR20000051515A KR100381492B1 KR 100381492 B1 KR100381492 B1 KR 100381492B1 KR 20000051515 A KR20000051515 A KR 20000051515A KR 100381492 B1 KR100381492 B1 KR 100381492B1
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KR
South Korea
Prior art keywords
circuit
voltage
internal
signal
power supply
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Expired - Fee Related
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KR10-2000-0051515A
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English (en)
Korean (ko)
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KR20010030218A (ko
Inventor
오오이시쯔까사
세또가와준
Original Assignee
미쓰비시덴키 가부시키가이샤
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
KR10-2000-0051515A 1999-09-02 2000-09-01 안정된 전원 전압을 공급하는 기능을 구비한 반도체 기억장치 Expired - Fee Related KR100381492B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24858099A JP4822572B2 (ja) 1999-09-02 1999-09-02 半導体記憶装置
JP1999-248580 1999-09-02

Publications (2)

Publication Number Publication Date
KR20010030218A KR20010030218A (ko) 2001-04-16
KR100381492B1 true KR100381492B1 (ko) 2003-04-23

Family

ID=17180251

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0051515A Expired - Fee Related KR100381492B1 (ko) 1999-09-02 2000-09-01 안정된 전원 전압을 공급하는 기능을 구비한 반도체 기억장치

Country Status (4)

Country Link
US (3) US6201754B1 (enExample)
JP (1) JP4822572B2 (enExample)
KR (1) KR100381492B1 (enExample)
TW (1) TW456106B (enExample)

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US20040085845A1 (en) * 2002-10-31 2004-05-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit
US6940777B2 (en) * 2002-10-31 2005-09-06 Renesas Technology Corp. Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit
KR100576453B1 (ko) * 2004-03-06 2006-05-08 주식회사 하이닉스반도체 병렬 테스트 회로를 포함하는 메모리 장치
US7142477B1 (en) * 2004-06-18 2006-11-28 Cypress Semiconductor Corp. Memory interface system and method for reducing cycle time of sequential read and write accesses using separate address and data buses
US7154794B2 (en) * 2004-10-08 2006-12-26 Lexmark International, Inc. Memory regulator system with test mode
US7170810B1 (en) * 2005-06-16 2007-01-30 Altera Corporation Stable programming circuitry for programmable integrated circuits
US7248531B2 (en) * 2005-08-03 2007-07-24 Mosaid Technologies Incorporated Voltage down converter for high speed memory
US20070171735A1 (en) * 2006-01-25 2007-07-26 Jong-Hoon Oh Latency circuit for semiconductor memories
KR100855969B1 (ko) * 2007-01-10 2008-09-02 삼성전자주식회사 반도체 메모리장치의 내부 전원전압 발생기
EP2153525B1 (en) 2007-05-29 2017-04-05 Rambus Inc. Adjusting clock error across a circuit interface
EP2006696A1 (en) * 2007-06-20 2008-12-24 Nxp B.V. Testable integrated circuit and test method
KR20080113969A (ko) * 2007-06-26 2008-12-31 주식회사 하이닉스반도체 동시 테스트 모드를 지원하는 테스트 회로
US8014214B2 (en) * 2007-11-08 2011-09-06 Hynix Semiconductor Inc. Semiconductor memory device
US8149643B2 (en) * 2008-10-23 2012-04-03 Cypress Semiconductor Corporation Memory device and method
US8188786B2 (en) * 2009-09-24 2012-05-29 International Business Machines Corporation Modularized three-dimensional capacitor array
US9230690B2 (en) * 2012-11-07 2016-01-05 Apple Inc. Register file write ring oscillator
KR102032230B1 (ko) * 2013-08-01 2019-10-16 에스케이하이닉스 주식회사 반도체 장치
KR20240067516A (ko) * 2022-11-09 2024-05-17 삼성전자주식회사 메모리 장치 및 그의 동작 방법

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JP2785548B2 (ja) * 1991-10-25 1998-08-13 日本電気株式会社 半導体メモリ
US5329168A (en) * 1991-12-27 1994-07-12 Nec Corporation Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources
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JP3542649B2 (ja) * 1994-12-28 2004-07-14 株式会社ルネサステクノロジ 半導体記憶装置およびその動作方法
JP3523718B2 (ja) 1995-02-06 2004-04-26 株式会社ルネサステクノロジ 半導体装置
JPH0969300A (ja) * 1995-06-23 1997-03-11 Mitsubishi Electric Corp 半導体記憶装置
JP3612634B2 (ja) * 1996-07-09 2005-01-19 富士通株式会社 高速クロック信号に対応した入力バッファ回路、集積回路装置、半導体記憶装置、及び集積回路システム
JPH10171774A (ja) * 1996-12-13 1998-06-26 Fujitsu Ltd 半導体集積回路
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JPH10247398A (ja) * 1997-03-05 1998-09-14 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその検査方法
JP3967002B2 (ja) * 1997-09-11 2007-08-29 株式会社ルネサステクノロジ 半導体集積回路
JP4074697B2 (ja) * 1997-11-28 2008-04-09 株式会社ルネサステクノロジ 半導体装置
KR100245411B1 (ko) * 1997-12-20 2000-02-15 윤종용 반도체 장치의 병렬 테스트 회로
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Also Published As

Publication number Publication date
US6201754B1 (en) 2001-03-13
US20010002175A1 (en) 2001-05-31
US6606274B2 (en) 2003-08-12
JP2001076484A (ja) 2001-03-23
US20020054532A1 (en) 2002-05-09
US6337828B2 (en) 2002-01-08
TW456106B (en) 2001-09-21
JP4822572B2 (ja) 2011-11-24
KR20010030218A (ko) 2001-04-16

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