JP4822572B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4822572B2
JP4822572B2 JP24858099A JP24858099A JP4822572B2 JP 4822572 B2 JP4822572 B2 JP 4822572B2 JP 24858099 A JP24858099 A JP 24858099A JP 24858099 A JP24858099 A JP 24858099A JP 4822572 B2 JP4822572 B2 JP 4822572B2
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JP
Japan
Prior art keywords
voltage
circuit
supply node
node
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP24858099A
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English (en)
Japanese (ja)
Other versions
JP2001076484A5 (enExample
JP2001076484A (ja
Inventor
司 大石
潤 瀬戸川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP24858099A priority Critical patent/JP4822572B2/ja
Priority to US09/514,364 priority patent/US6201754B1/en
Priority to TW089115797A priority patent/TW456106B/zh
Priority to KR10-2000-0051515A priority patent/KR100381492B1/ko
Priority to US09/764,134 priority patent/US6337828B2/en
Publication of JP2001076484A publication Critical patent/JP2001076484A/ja
Priority to US10/036,512 priority patent/US6606274B2/en
Publication of JP2001076484A5 publication Critical patent/JP2001076484A5/ja
Application granted granted Critical
Publication of JP4822572B2 publication Critical patent/JP4822572B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
JP24858099A 1999-09-02 1999-09-02 半導体記憶装置 Expired - Fee Related JP4822572B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP24858099A JP4822572B2 (ja) 1999-09-02 1999-09-02 半導体記憶装置
US09/514,364 US6201754B1 (en) 1999-09-02 2000-02-28 Semiconductor memory device having function of supplying stable power supply voltage
TW089115797A TW456106B (en) 1999-09-02 2000-08-05 Semiconductor memory device
KR10-2000-0051515A KR100381492B1 (ko) 1999-09-02 2000-09-01 안정된 전원 전압을 공급하는 기능을 구비한 반도체 기억장치
US09/764,134 US6337828B2 (en) 1999-09-02 2001-01-19 Semiconductor memory device having function of supplying stable power supply voltage
US10/036,512 US6606274B2 (en) 1999-09-02 2002-01-07 Semiconductor memory device having function of supplying stable power supply voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24858099A JP4822572B2 (ja) 1999-09-02 1999-09-02 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2001076484A JP2001076484A (ja) 2001-03-23
JP2001076484A5 JP2001076484A5 (enExample) 2006-09-21
JP4822572B2 true JP4822572B2 (ja) 2011-11-24

Family

ID=17180251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24858099A Expired - Fee Related JP4822572B2 (ja) 1999-09-02 1999-09-02 半導体記憶装置

Country Status (4)

Country Link
US (3) US6201754B1 (enExample)
JP (1) JP4822572B2 (enExample)
KR (1) KR100381492B1 (enExample)
TW (1) TW456106B (enExample)

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US6487648B1 (en) * 1999-12-15 2002-11-26 Xilinx, Inc. SDRAM controller implemented in a PLD
US6675330B1 (en) * 2000-01-07 2004-01-06 National Seminconductor Corporation Testing the operation of integrated circuits by simulating a switching-mode of their power supply inputs
KR100374641B1 (ko) * 2000-11-24 2003-03-04 삼성전자주식회사 스탠바이 모드에서 지연동기 루프회로의 전력소모를감소시키기 위한 제어회로를 구비하는 반도체 메모리장치및 이의 파우워 다운 제어방법
US20040085845A1 (en) * 2002-10-31 2004-05-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit
US6940777B2 (en) * 2002-10-31 2005-09-06 Renesas Technology Corp. Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit
KR100576453B1 (ko) * 2004-03-06 2006-05-08 주식회사 하이닉스반도체 병렬 테스트 회로를 포함하는 메모리 장치
US7142477B1 (en) * 2004-06-18 2006-11-28 Cypress Semiconductor Corp. Memory interface system and method for reducing cycle time of sequential read and write accesses using separate address and data buses
US7154794B2 (en) * 2004-10-08 2006-12-26 Lexmark International, Inc. Memory regulator system with test mode
US7170810B1 (en) * 2005-06-16 2007-01-30 Altera Corporation Stable programming circuitry for programmable integrated circuits
US7248531B2 (en) * 2005-08-03 2007-07-24 Mosaid Technologies Incorporated Voltage down converter for high speed memory
US20070171735A1 (en) * 2006-01-25 2007-07-26 Jong-Hoon Oh Latency circuit for semiconductor memories
KR100855969B1 (ko) * 2007-01-10 2008-09-02 삼성전자주식회사 반도체 메모리장치의 내부 전원전압 발생기
WO2008153645A2 (en) 2007-05-29 2008-12-18 Rambus, Inc. Memory comprising : clock generator, clock circuit, voltage regulator
EP2006696A1 (en) * 2007-06-20 2008-12-24 Nxp B.V. Testable integrated circuit and test method
KR20080113969A (ko) * 2007-06-26 2008-12-31 주식회사 하이닉스반도체 동시 테스트 모드를 지원하는 테스트 회로
US8014214B2 (en) * 2007-11-08 2011-09-06 Hynix Semiconductor Inc. Semiconductor memory device
US8149643B2 (en) * 2008-10-23 2012-04-03 Cypress Semiconductor Corporation Memory device and method
US8188786B2 (en) * 2009-09-24 2012-05-29 International Business Machines Corporation Modularized three-dimensional capacitor array
US9230690B2 (en) * 2012-11-07 2016-01-05 Apple Inc. Register file write ring oscillator
KR102032230B1 (ko) * 2013-08-01 2019-10-16 에스케이하이닉스 주식회사 반도체 장치
KR20240067516A (ko) * 2022-11-09 2024-05-17 삼성전자주식회사 메모리 장치 및 그의 동작 방법

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KR100209449B1 (ko) * 1990-05-21 1999-07-15 가나이 쓰토무 반도체 집적회로 장치
JP2785548B2 (ja) * 1991-10-25 1998-08-13 日本電気株式会社 半導体メモリ
US5329168A (en) * 1991-12-27 1994-07-12 Nec Corporation Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources
US5400343A (en) * 1992-02-28 1995-03-21 Intel Corporation Apparatus and method for defective column detection for semiconductor memories
JP3166281B2 (ja) * 1992-04-14 2001-05-14 株式会社日立製作所 半導体集積回路及びその製造方法
FR2690751B1 (fr) * 1992-04-30 1994-06-17 Sgs Thomson Microelectronics Procede et circuit de detection de fuites de courant dans une ligne de bit.
JP3583482B2 (ja) * 1994-10-04 2004-11-04 株式会社ルネサステクノロジ 半導体集積回路装置
JPH08153400A (ja) * 1994-11-29 1996-06-11 Mitsubishi Electric Corp Ｄｒａｍ
JP3542649B2 (ja) * 1994-12-28 2004-07-14 株式会社ルネサステクノロジ 半導体記憶装置およびその動作方法
JP3523718B2 (ja) 1995-02-06 2004-04-26 株式会社ルネサステクノロジ 半導体装置
JPH0969300A (ja) * 1995-06-23 1997-03-11 Mitsubishi Electric Corp 半導体記憶装置
JP3612634B2 (ja) * 1996-07-09 2005-01-19 富士通株式会社 高速クロック信号に対応した入力バッファ回路、集積回路装置、半導体記憶装置、及び集積回路システム
JPH10171774A (ja) * 1996-12-13 1998-06-26 Fujitsu Ltd 半導体集積回路
US6208567B1 (en) * 1997-01-31 2001-03-27 Matsushita Electric Industrial Co., Ltd. Semiconductor device capable of cutting off a leakage current in a defective array section
JPH10247398A (ja) * 1997-03-05 1998-09-14 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその検査方法
JP3967002B2 (ja) * 1997-09-11 2007-08-29 株式会社ルネサステクノロジ 半導体集積回路
JP4074697B2 (ja) * 1997-11-28 2008-04-09 株式会社ルネサステクノロジ 半導体装置
KR100245411B1 (ko) * 1997-12-20 2000-02-15 윤종용 반도체 장치의 병렬 테스트 회로
US6005812A (en) * 1998-02-27 1999-12-21 Micron Technology, Inc. Device and method for supplying current to a semiconductor memory to support a boosted voltage within the memory during testing
ITMI981124A1 (it) * 1998-05-21 1999-11-21 Sgs Thomson Microelectronics Metodo processo e dispositivo per l'individuazione di difetti puntuali che provocano correnti di leakage in un dispositivo di memoria non
JP3587702B2 (ja) * 1998-10-20 2004-11-10 富士通株式会社 Ｄｌｌ回路を内蔵する集積回路装置

Also Published As

Publication number Publication date
US6606274B2 (en) 2003-08-12
KR20010030218A (ko) 2001-04-16
JP2001076484A (ja) 2001-03-23
US6337828B2 (en) 2002-01-08
US20010002175A1 (en) 2001-05-31
TW456106B (en) 2001-09-21
US20020054532A1 (en) 2002-05-09
KR100381492B1 (ko) 2003-04-23
US6201754B1 (en) 2001-03-13

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