TW447113B - Semiconductor device and the manufacturing method thereof - Google Patents

Semiconductor device and the manufacturing method thereof Download PDF

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Publication number
TW447113B
TW447113B TW088113539A TW88113539A TW447113B TW 447113 B TW447113 B TW 447113B TW 088113539 A TW088113539 A TW 088113539A TW 88113539 A TW88113539 A TW 88113539A TW 447113 B TW447113 B TW 447113B
Authority
TW
Taiwan
Prior art keywords
film
silicon
semiconductor device
silicon film
patent application
Prior art date
Application number
TW088113539A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiro Sugawara
Ryoichi Furukawa
Toshio Uemura
Akira Takamatsu
Hirohiko Yamamoto
Original Assignee
Hitachi Ltd
Hitachi Ulsi Sys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Ulsi Sys Co Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW447113B publication Critical patent/TW447113B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Semiconductor Memories (AREA)
TW088113539A 1998-09-04 1999-08-07 Semiconductor device and the manufacturing method thereof TW447113B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10251308A JP2992516B1 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW447113B true TW447113B (en) 2001-07-21

Family

ID=17220884

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088113539A TW447113B (en) 1998-09-04 1999-08-07 Semiconductor device and the manufacturing method thereof

Country Status (4)

Country Link
US (2) US6524927B1 (https=)
JP (2) JP4024940B2 (https=)
KR (1) KR20000022801A (https=)
TW (1) TW447113B (https=)

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US6458652B1 (en) * 2001-08-20 2002-10-01 Micron Technology, Inc. Methods of forming capacitor electrodes
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JP4470170B2 (ja) 2004-11-30 2010-06-02 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP2007053279A (ja) * 2005-08-19 2007-03-01 Elpida Memory Inc 半導体装置の製造方法
US7875959B2 (en) * 2005-08-31 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having selective silicide-induced stress and a method of producing same
KR100806042B1 (ko) * 2006-08-31 2008-02-26 동부일렉트로닉스 주식회사 반도체 소자 제조장치 및 이를 이용한 반도체 소자제조방법
KR100864927B1 (ko) * 2006-11-13 2008-10-23 동부일렉트로닉스 주식회사 반도체 소자의 엠아이엠 형성 방법
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KR101406225B1 (ko) * 2008-04-11 2014-06-13 삼성전자주식회사 반도체 소자의 제조방법
KR101096835B1 (ko) * 2010-01-08 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 형성 방법
JP5731858B2 (ja) * 2011-03-09 2015-06-10 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及び半導体装置の製造方法
CN115382743B (zh) * 2021-05-24 2023-08-22 成宏能源股份有限公司 形成具有涂层的结构的方法及具有涂层的结构

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JP3071284B2 (ja) 1991-12-20 2000-07-31 宮崎沖電気株式会社 半導体素子の製造方法
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Also Published As

Publication number Publication date
JP2000156476A (ja) 2000-06-06
US20030038325A1 (en) 2003-02-27
US6717202B2 (en) 2004-04-06
JP2992516B1 (ja) 1999-12-20
JP2000156475A (ja) 2000-06-06
JP4024940B2 (ja) 2007-12-19
US6524927B1 (en) 2003-02-25
KR20000022801A (ko) 2000-04-25

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