TW434753B - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method Download PDF

Info

Publication number
TW434753B
TW434753B TW083105069A TW83105069A TW434753B TW 434753 B TW434753 B TW 434753B TW 083105069 A TW083105069 A TW 083105069A TW 83105069 A TW83105069 A TW 83105069A TW 434753 B TW434753 B TW 434753B
Authority
TW
Taiwan
Prior art keywords
nitrogen
electrode
region
film
insulating film
Prior art date
Application number
TW083105069A
Other languages
English (en)
Chinese (zh)
Inventor
Shuichi Ueno
Takashi Kuroi
Hidekazu Oda
Satoshi Shimizu
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW434753B publication Critical patent/TW434753B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
TW083105069A 1993-09-02 1994-06-03 Semiconductor device and its manufacturing method TW434753B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP21862493 1993-09-02
JP27196193 1993-10-29
JP04417394A JP3830541B2 (ja) 1993-09-02 1994-03-15 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW434753B true TW434753B (en) 2001-05-16

Family

ID=27291810

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083105069A TW434753B (en) 1993-09-02 1994-06-03 Semiconductor device and its manufacturing method

Country Status (6)

Country Link
US (2) US6300664B1 (OSRAM)
JP (1) JP3830541B2 (OSRAM)
KR (1) KR100206650B1 (OSRAM)
DE (1) DE4430366C2 (OSRAM)
FR (1) FR2709599A1 (OSRAM)
TW (1) TW434753B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7164178B2 (en) 2001-07-18 2007-01-16 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing the same

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW299476B (OSRAM) 1994-06-22 1997-03-01 Mitsubishi Electric Corp
JP3015253B2 (ja) * 1994-06-22 2000-03-06 三菱電機株式会社 半導体装置およびその製造方法
JPH1079506A (ja) * 1996-02-07 1998-03-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
EP0905789A4 (en) * 1996-06-14 1999-08-25 Mitsubishi Electric Corp Semiconductor device having soi structure and method for manufacturing the device
US5872049A (en) * 1996-06-19 1999-02-16 Advanced Micro Devices, Inc. Nitrogenated gate structure for improved transistor performance and method for making same
JPH10150198A (ja) 1996-11-18 1998-06-02 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
DE19652417A1 (de) * 1996-12-09 1998-06-10 Inst Halbleiterphysik Gmbh MOSFET und Verfahren zur Herstellung der Schichten für einen derartigen Transistor
JP3090074B2 (ja) * 1997-01-20 2000-09-18 日本電気株式会社 半導体装置及びその製造方法
JP3602679B2 (ja) * 1997-02-26 2004-12-15 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6815295B1 (en) 1997-05-14 2004-11-09 Renesas Technology Corp. Method of manufacturing field effect transistors
JP3648015B2 (ja) * 1997-05-14 2005-05-18 株式会社ルネサステクノロジ 半導体装置
JPH11214683A (ja) * 1998-01-26 1999-08-06 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
KR20000043194A (ko) * 1998-12-28 2000-07-15 김영환 반도체소자의 게이트전극 형성방법
US6440829B1 (en) * 1998-12-30 2002-08-27 Agere Systems Guardian Corp. N-profile engineering at the poly/gate oxide and gate oxide/SI interfaces through NH3 annealing of a layered poly/amorphous-silicon structure
KR100308133B1 (ko) * 1999-01-12 2001-09-26 김영환 듀얼 게이트 모스 트랜지스터 제조방법
GB9926670D0 (en) * 1999-11-12 2000-01-12 Univ Liverpool Field effect transistor (FET) and FET circuitry
US6921708B1 (en) 2000-04-13 2005-07-26 Micron Technology, Inc. Integrated circuits having low resistivity contacts and the formation thereof using an in situ plasma doping and clean
AU2001262953A1 (en) * 2000-04-28 2001-11-12 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
WO2001091169A1 (en) * 2000-05-24 2001-11-29 Infineon Technologies North America Corp. Suppression of lateral dopant diffusion from source/drain regions of mosfets
JP2002076364A (ja) 2000-06-15 2002-03-15 Seiko Epson Corp 基板装置及びその製造方法並びに電気光学装置
JP4772183B2 (ja) * 2000-11-30 2011-09-14 ルネサスエレクトロニクス株式会社 半導体装置
JP2002208645A (ja) 2001-01-09 2002-07-26 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6566680B1 (en) * 2001-01-30 2003-05-20 Advanced Micro Devices, Inc. Semiconductor-on-insulator (SOI) tunneling junction transistor
TW557514B (en) * 2001-08-02 2003-10-11 Tokyo Electron Ltd Method for processing a substrate and material for electronic devices
JP2003078136A (ja) * 2001-09-05 2003-03-14 Sanyo Electric Co Ltd 半導体装置の製造方法
JP3851896B2 (ja) * 2002-09-27 2006-11-29 株式会社東芝 半導体装置の製造方法
US20040191999A1 (en) * 2003-03-24 2004-09-30 Texas Instruments Incroporated Semiconductor structure and method of fabrication
US7314812B2 (en) * 2003-08-28 2008-01-01 Micron Technology, Inc. Method for reducing the effective thickness of gate oxides by nitrogen implantation and anneal
US6821833B1 (en) * 2003-09-09 2004-11-23 International Business Machines Corporation Method for separately optimizing thin gate dielectric of PMOS and NMOS transistors within the same semiconductor chip and device manufactured thereby
US7105414B2 (en) * 2003-12-27 2006-09-12 Dongbu Electronics Co., Ltd. Method of manufacturing MOS transistor
JP4919586B2 (ja) * 2004-06-14 2012-04-18 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US7422968B2 (en) * 2004-07-29 2008-09-09 Texas Instruments Incorporated Method for manufacturing a semiconductor device having silicided regions
US20060040438A1 (en) * 2004-08-17 2006-02-23 Jiong-Ping Lu Method for improving the thermal stability of silicide
US7517780B2 (en) * 2005-01-28 2009-04-14 Macronix International Co., Ltd. Method for eliminating polycide voids through nitrogen implantation
GB2440467B (en) * 2005-04-29 2009-11-25 Advanced Micro Devices Inc A semiconductor device having a gate dielectric of different blocking characteristics
DE102005020058B4 (de) * 2005-04-29 2011-07-07 Globalfoundries Inc. Herstellungsverfahren für ein Halbleiterbauelement mit Gatedielektrika mit unterschiedlichen Blockiereigenschaften
US7384853B2 (en) * 2005-08-25 2008-06-10 United Microelectronics Corp. Method of performing salicide processes on MOS transistors
US7488635B2 (en) * 2005-10-26 2009-02-10 Freescale Semiconductor, Inc. Semiconductor structure with reduced gate doping and methods for forming thereof
US7708846B2 (en) * 2005-11-28 2010-05-04 United Technologies Corporation Superalloy stabilization
KR100773096B1 (ko) * 2006-01-20 2007-11-02 삼성전자주식회사 도펀트 도핑 영역을 포함하는 반도체 소자의 형성 방법
US7485528B2 (en) * 2006-07-14 2009-02-03 Micron Technology, Inc. Method of forming memory devices by performing halogen ion implantation and diffusion processes
KR100753558B1 (ko) * 2006-08-21 2007-08-30 삼성전자주식회사 씨모스 트랜지스터 및 그 제조 방법
JPWO2008078363A1 (ja) * 2006-12-22 2010-04-15 株式会社ルネサステクノロジ 半導体装置の製造方法および半導体装置
US8421130B2 (en) * 2007-04-04 2013-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing SRAM devices with reduced threshold voltage deviation
US20090045472A1 (en) * 2007-08-13 2009-02-19 Texas Instruments Incorporated Methodology for Reducing Post Burn-In Vmin Drift
US20090050980A1 (en) * 2007-08-21 2009-02-26 Texas Instruments Incorporated Method of forming a semiconductor device with source/drain nitrogen implant, and related device
US8722484B2 (en) * 2008-01-14 2014-05-13 Tower Semiconductor Ltd. High-K dielectric stack and method of fabricating same
JP2009182076A (ja) * 2008-01-30 2009-08-13 Panasonic Corp 半導体装置及びその製造方法
JP5341994B2 (ja) * 2009-06-26 2013-11-13 株式会社東芝 半導体装置の製造方法
US20120021577A1 (en) * 2010-07-21 2012-01-26 Purtell Robert J Gate trench conductor fill
US8470700B2 (en) * 2010-07-22 2013-06-25 Globalfoundries Singapore Pte. Ltd. Semiconductor device with reduced contact resistance and method of manufacturing thereof
WO2012073583A1 (en) * 2010-12-03 2012-06-07 Kabushiki Kaisha Toshiba Method of forming an inpurity implantation layer
KR20120107762A (ko) 2011-03-22 2012-10-04 삼성전자주식회사 반도체 소자의 제조 방법
FR2983635B1 (fr) * 2011-12-05 2014-05-23 Soitec Silicon On Insulator Structure semiconducteur sur isolant avec des caracteristiques electriques ameliorees
KR20130077213A (ko) * 2011-12-29 2013-07-09 삼성전자주식회사 반도체 소자의 제조 방법
JP5807648B2 (ja) * 2013-01-29 2015-11-10 信越半導体株式会社 両面研磨装置用キャリア及びウェーハの両面研磨方法
JP2014183293A (ja) * 2013-03-21 2014-09-29 Toshiba Corp 不揮発性半導体記憶装置
JP2015035547A (ja) 2013-08-09 2015-02-19 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP7433132B2 (ja) * 2020-05-19 2024-02-19 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5420676A (en) * 1977-07-15 1979-02-16 Mitsubishi Electric Corp Production of semiconductor heat-sensitive switching elements
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPS61263274A (ja) * 1985-05-17 1986-11-21 Hitachi Ltd 半導体装置の製造方法
US4888246A (en) * 1985-05-23 1989-12-19 Matsushita Electric Industrial Co., Ltd. Dielectric thin film, and method for making the thin film
US4806498A (en) 1985-06-21 1989-02-21 Texas Instruments Incorporated Semiconductor charge-coupled device and process of fabrication thereof
US4755865A (en) * 1986-01-21 1988-07-05 Motorola Inc. Means for stabilizing polycrystalline semiconductor layers
US4774197A (en) * 1986-06-17 1988-09-27 Advanced Micro Devices, Inc. Method of improving silicon dioxide
US5237196A (en) * 1987-04-14 1993-08-17 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US4897368A (en) * 1987-05-21 1990-01-30 Matsushita Electric Industrial Co., Ltd. Method of fabricating a polycidegate employing nitrogen/oxygen implantation
US5027185A (en) * 1988-06-06 1991-06-25 Industrial Technology Research Institute Polycide gate FET with salicide
JPH01309320A (ja) 1988-06-07 1989-12-13 Mitsubishi Electric Corp 半導体装置の製造方法
JPH02262371A (ja) * 1989-04-03 1990-10-25 Toshiba Corp 半導体装置及びその製造方法
JPH02270335A (ja) * 1989-04-12 1990-11-05 Toshiba Corp 半導体装置及びその製造方法
JP2860482B2 (ja) 1989-07-11 1999-02-24 セイコーインスツルメンツ株式会社 半導体装置の製造方法
JPH0346238A (ja) 1989-07-13 1991-02-27 Seiko Instr Inc 半導体装置の製造方法
US5134447A (en) * 1989-09-22 1992-07-28 At&T Bell Laboratories Neutral impurities to increase lifetime of operation of semiconductor devices
US5189504A (en) * 1989-12-11 1993-02-23 Nippon Telegraph And Telephone Corporation Semiconductor device of MOS structure having p-type gate electrode
JPH03278466A (ja) * 1990-03-27 1991-12-10 Toshiba Corp 薄膜トランジスタおよびその製造方法
JPH0425176A (ja) 1990-05-18 1992-01-28 Seiko Instr Inc 半導体装置の製造方法
JPH04157766A (ja) * 1990-10-20 1992-05-29 Sony Corp シリコンゲートｐチャンネルＭＯＳ半導体装置の製造方法
KR940011483B1 (ko) * 1990-11-28 1994-12-19 가부시끼가이샤 도시바 반도체 디바이스를 제조하기 위한 방법 및 이 방법에 의해 제조되는 반도체 디바이스
US5218211A (en) * 1991-10-23 1993-06-08 The United States Of America As Represented By The Secretary Of Commerce System for sampling the sizes, geometrical distribution, and frequency of small particles accumulating on a solid surface
JPH0629314A (ja) * 1992-07-08 1994-02-04 Hitachi Ltd 半導体装置及びその製造方法
JPH06151829A (ja) * 1992-11-02 1994-05-31 Kawasaki Steel Corp 半導体装置の製造方法
US5514902A (en) * 1993-09-16 1996-05-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having MOS transistor
JPH08139315A (ja) * 1994-11-09 1996-05-31 Mitsubishi Electric Corp Ｍｏｓトランジスタ、半導体装置及びそれらの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7164178B2 (en) 2001-07-18 2007-01-16 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
KR950010065A (ko) 1995-04-26
KR100206650B1 (ko) 1999-07-01
JP3830541B2 (ja) 2006-10-04
US6521527B1 (en) 2003-02-18
US6300664B1 (en) 2001-10-09
FR2709599A1 (fr) 1995-03-10
DE4430366A1 (de) 1995-03-09
FR2709599B1 (OSRAM) 1997-02-14
DE4430366C2 (de) 1998-11-12
JPH07176743A (ja) 1995-07-14

Similar Documents

Publication Publication Date Title
TWI265628B (en) Semiconductor device for reading signal from photodiode via transistors
TWI275137B (en) Semiconductor device fabrication method
TWI300931B (en) Method of operating non-volatile memory device
TW561513B (en) Semiconductor device and method of manufacturing the same
TWI379418B (en) A unified non-volatle memory device and method for integrating nor and nand-type flash memory and eeprom device on a single substrate
TW200401438A (en) Non-volatile semiconductor memory device and method of fabricating thereof
TW201537741A (zh) 攝像裝置
JP2000228527A5 (OSRAM)
TW200411918A (en) Solid-state image sensor and image reading method
TW202015229A (zh) 攝像裝置
TWI267981B (en) Nonvolatile semiconductor memory device
TW200847429A (en) Semiconductor device and method for fabricating the same
TW200917254A (en) A method of driving a semiconductor memory device and a semiconductor memory device
TW200830540A (en) Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure
TWI325172B (en) Self-aligned photodiode for cmos images sensor and method of making
TWI313056B (en) Semiconductor device and image display apparatus
TW384545B (en) Non-volatile semiconductor memory device
TWI275163B (en) Semiconductor storage device and portable electronic equipment
DE102008010110A1 (de) Feldeffekttransistor-Anordnung und Verfahren zum Herstellen einer Feldeffekttransistor-Anordnung
TWI249850B (en) Solid-state image sensor
TW200414522A (en) Semiconductor memory having charge trapping memory cells and fabrication method
TW412791B (en) Semiconductor device and method for making the same
TWI245426B (en) Shielded-junction TFT structure
JPH05129630A (ja) 不揮発性半導体記憶装置の製造方法
TW389907B (en) Transistors, transistor arrays, semiconductor memories and method for making transistor arrays

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees