JP5341994B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 103
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 59
- 229910052757 nitrogen Inorganic materials 0.000 claims description 54
- 238000005468 ion implantation Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 30
- 229910052759 nickel Inorganic materials 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 17
- 229910005883 NiSi Inorganic materials 0.000 claims description 9
- 238000011282 treatment Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 56
- 229910021332 silicide Inorganic materials 0.000 description 46
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 229910021334 nickel silicide Inorganic materials 0.000 description 31
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 31
- 125000004429 atom Chemical group 0.000 description 19
- 230000000694 effects Effects 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 230000002159 abnormal effect Effects 0.000 description 11
- 238000003917 TEM image Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- -1 for example Substances 0.000 description 6
- 238000004151 rapid thermal annealing Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910005881 NiSi 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004140 HfO Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000002815 nickel Chemical group 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本実施の形態の半導体装置の製造方法は、MISFETを備える半導体装置の製造方法であって、半導体基板上にゲート絶縁膜を形成し、ゲート絶縁膜上にゲート電極を形成し、ゲート電極のそれぞれの側面に対し外側から内側へと向かう方向に、斜めイオン注入により半導体基板中に5.0e14atoms/cm2以上1.5e15atoms/cm2以下の窒素を注入し、ゲート電極の両側の半導体基板上にニッケルを含む金属膜を堆積し、金属膜と半導体基板を反応させ、ソース・ドレインエクステンションとなる金属半導体化合物層を形成する第1の熱処理を行う。また、本実施の形態のMISFETは、メタルS/D MISFETであり、プレーナー型のBulk MISEFETである。
半導体基板:(100)シリコン
窒素の斜めイオン注入:ドーズ量1.0e15atoms/cm2、10keV、チルト角45°、ローテンション角23°、113°、203°、293°の4分割。
ニッケル膜:膜厚30nm、スパッタ法。
第1の熱処理:RTA、325℃、1分
第2の熱処理:RTA、450℃、1分
本変形例は、第1の実施の形態において、ソース・ドレイン不純物をシリサイド層形成後にイオン注入することにかえて、シリサイド層形成前にイオン注入すること以外は、第1の実施の形態と同様である。半導体基板や半導体化合物の種類あるいはプロセス条件、MISFETの設計によって、ソース・ドレイン不純物をイオン注入するタイミングを適宜、最適なものに選択すればよい。また、ソース・ドレイン不純物を注入しないことを選択しても構わない。
本実施の形態の半導体装置の製造方法は、MISFETがSOI(Silicon On Insulator) MISFETであること以外は第1の実施の形態およびその変形例と同様である。したがって、第1の実施の形態およびその変形例と重複する内容については記載を省略する。
本実施の形態の半導体装置の製造方法は、MISFETがFinFETであること以外は第2の実施の形態と同様である。したがって、第2の実施の形態およびその変形例と重複する内容については記載を省略する。なお、FinFETとは、板状(Fin形状)の半導体基板を両側面から挟み込むようにゲート電極を設けるMISFETである。ゲートの支配力が向上するため、ゲート長の短い微細MISFETの実現が容易となる。
12 素子分離層
14 ゲート絶縁膜
16 ゲート電極
18 ゲート側壁
20 高濃度窒素層
22 ニッケル膜
24a ニッケルシリサイド層
24b ニッケルシリサイド層
30 支持基板
32 BOX層
34 SOI層
40 Fin構造
Claims (4)
- MISFETを備える半導体装置の製造方法であって、
半導体基板上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にゲート電極を形成し、
前記ゲート電極のそれぞれの側面に対し外側から内側へと向かう方向に、斜めイオン注入により前記ゲート電極の両側の前記半導体基板中に5.0e14atoms/cm2以上1.5e15atoms/cm2以下の窒素を注入し、
前記ゲート電極の両側の前記半導体基板の、窒素が注入された領域上にニッケルを含む金属膜を堆積し、
前記金属膜と前記領域とを反応させ金属半導体化合物層を形成する第1の熱処理を行い、
前記第1の熱処理の後、未反応の前記金属膜を薬液処理により除去し、前記第1の熱処理の温度よりも高温で第2の熱処理を行い、
前記第1の熱処理の温度が275℃以上350℃以下で、
前記第2の熱処理後の前記金属半導体化合物層がNiSi(ニッケルモノシリサイド)相で形成され、チャネル領域との接合部にはファセット面が形成されていることを特徴とする半導体装置の製造方法。 - 前記MISFETがFinFETまたはSOI MISFETであることを特徴とする請求項1記載の半導体装置の製造方法。
- MISFETを備える半導体装置の製造方法であって、
SOI基板上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にゲート電極を形成し、
前記ゲート電極のそれぞれの側面に対し外側から内側へと向かう方向に、斜めイオン注入により前記ゲート電極の両側の前記SOI基板中に5.0e14atoms/cm2以上1.5e15atoms/cm2以下の窒素を注入し、
前記ゲート電極の両側の前記SOI基板の、窒素が注入された領域上にニッケルを含む金属膜を堆積し、
前記金属膜と前記領域とを反応させ金属半導体化合物層を形成する第1の熱処理を行い、
前記第1の熱処理の後、未反応の前記金属膜を薬液処理により除去し、前記第1の熱処理の温度よりも高温で第2の熱処理を行い、
前記第1の熱処理の温度が275℃以上350℃以下で、
前記第2の熱処理後の前記金属半導体化合物層がNiSi(ニッケルモノシリサイド)相で形成され、チャネル領域との接合部にはファセット面が形成されていることを特徴とする半導体装置の製造方法。 - FinFETを備える半導体装置の製造方法であって、
半導体で形成されるFin構造の両側面上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にゲート電極を形成し、
前記Fin構造の両側面上に形成される前記ゲート電極のそれぞれの側面に対し外側から内側へと向かう方向に、斜めイオン注入により前記ゲート電極の両側の前記Fin構造中に5.0e14atoms/cm2以上1.5e15atoms/cm2以下の窒素を注入し、
前記ゲート電極の両側の前記Fin構造の、窒素が注入された領域上にニッケルを含む金属膜を堆積し、
前記金属膜と前記領域とを反応させ金属半導体化合物層を形成する第1の熱処理を行い、
前記第1の熱処理の後、未反応の前記金属膜を薬液処理により除去し、前記第1の熱処理の温度よりも高温で第2の熱処理を行い、
前記第1の熱処理の温度が275℃以上350℃以下で、
前記第2の熱処理後の前記金属半導体化合物層がNiSi(ニッケルモノシリサイド)相で形成され、チャネル領域との接合部にはファセット面が形成されていることを特徴とする半導体装置の製造方法。
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JP5613640B2 (ja) * | 2011-09-08 | 2014-10-29 | 株式会社東芝 | 半導体装置の製造方法 |
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CN103779222A (zh) * | 2012-10-23 | 2014-05-07 | 中国科学院微电子研究所 | Mosfet的制造方法 |
US9064942B2 (en) * | 2013-01-28 | 2015-06-23 | International Business Machines Corporation | Nanowire capacitor for bidirectional operation |
US20150187915A1 (en) * | 2013-12-26 | 2015-07-02 | Samsung Electronics Co., Ltd. | Method for fabricating fin type transistor |
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CN105023843A (zh) * | 2014-04-22 | 2015-11-04 | 联华电子股份有限公司 | 半导体元件的制作方法 |
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US11114157B1 (en) | 2020-04-23 | 2021-09-07 | Western Digital Technologies, Inc. | Low resistance monosilicide electrode for phase change memory and methods of making the same |
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