TW328591B - Sense circuit - Google Patents

Sense circuit

Info

Publication number
TW328591B
TW328591B TW086108069A TW86108069A TW328591B TW 328591 B TW328591 B TW 328591B TW 086108069 A TW086108069 A TW 086108069A TW 86108069 A TW86108069 A TW 86108069A TW 328591 B TW328591 B TW 328591B
Authority
TW
Taiwan
Prior art keywords
mos transistor
enable signal
sense amplifier
sense
circuit
Prior art date
Application number
TW086108069A
Other languages
English (en)
Inventor
Junichi Suyama
Kazukiyo Fukutome
Akihiro Hirota
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Application granted granted Critical
Publication of TW328591B publication Critical patent/TW328591B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW086108069A 1996-07-24 1997-06-12 Sense circuit TW328591B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19500496A JP3672384B2 (ja) 1996-07-24 1996-07-24 センス回路

Publications (1)

Publication Number Publication Date
TW328591B true TW328591B (en) 1998-03-21

Family

ID=16333941

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086108069A TW328591B (en) 1996-07-24 1997-06-12 Sense circuit

Country Status (7)

Country Link
US (1) US5949729A (zh)
EP (1) EP0821364B1 (zh)
JP (1) JP3672384B2 (zh)
KR (1) KR100338271B1 (zh)
CN (1) CN1191587C (zh)
DE (1) DE69726225T2 (zh)
TW (1) TW328591B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959916A (en) * 1998-02-06 1999-09-28 International Business Machines Corporation Write driver and bit line precharge apparatus and method
US6128236A (en) * 1998-12-17 2000-10-03 Nippon Steel Semiconductor Corp. Current sensing differential amplifier with high rejection of power supply variations and method for an integrated circuit memory device
US6198677B1 (en) * 1998-12-29 2001-03-06 International Business Machines Corporation Boosted sensing ground circuit
KR100361862B1 (ko) 1998-12-30 2003-02-20 주식회사 하이닉스반도체 반도체 메모리장치 및 이의 센싱전류 감소방법
US6535415B2 (en) * 1999-02-22 2003-03-18 Hitachi, Ltd. Semiconductor device
JP2000243085A (ja) * 1999-02-22 2000-09-08 Hitachi Ltd 半導体装置
US6236605B1 (en) * 1999-03-26 2001-05-22 Fujitsu Limited Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifier
JP2001084767A (ja) * 1999-08-30 2001-03-30 Internatl Business Mach Corp <Ibm> センスアンプ
JP4366858B2 (ja) * 2000-09-18 2009-11-18 ソニー株式会社 Ｍｏｓトランジスタ回路
JP4032039B2 (ja) * 2004-04-06 2008-01-16 株式会社東芝 半導体記憶装置
KR100702004B1 (ko) 2004-08-02 2007-03-30 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 비트 라인 센싱 방법
JP4411616B2 (ja) * 2006-07-24 2010-02-10 エルピーダメモリ株式会社 半導体記憶装置及びその制御方法
KR20130068482A (ko) * 2011-12-15 2013-06-26 에스케이하이닉스 주식회사 반도체 메모리 장치
FR3017897B1 (fr) 2014-02-21 2019-09-27 I.T.H.P.P Systeme de forage rotary par decharges electriques
KR20160069147A (ko) * 2014-12-08 2016-06-16 에스케이하이닉스 주식회사 데이터 감지 증폭기 및 이를 포함하는 메모리 장치
US10236036B2 (en) 2017-05-09 2019-03-19 Micron Technology, Inc. Sense amplifier signal boost
JP7065637B2 (ja) * 2018-02-22 2022-05-12 ルネサスエレクトロニクス株式会社 半導体装置
US10566036B2 (en) 2018-06-15 2020-02-18 Micron Technology, Inc. Apparatuses and method for reducing sense amplifier leakage current during active power-down

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61158094A (ja) * 1984-12-28 1986-07-17 Toshiba Corp ダイナミツク型メモリのセンスアンプ駆動回路
JPH0752670B2 (ja) * 1987-10-14 1995-06-05 キヤノン株式会社 電界発光素子及びその製造方法
KR940003409B1 (ko) * 1991-07-31 1994-04-21 삼성전자 주식회사 반도체 메모리 장치의 센스앰프 제어회로
JPH0574156A (ja) * 1991-09-13 1993-03-26 Sumitomo Metal Ind Ltd 半導体記憶回路
JPH06150646A (ja) * 1992-11-13 1994-05-31 Nec Corp 半導体メモリ
JPH06302189A (ja) * 1993-02-22 1994-10-28 Toshiba Corp 半導体記憶装置
JPH06309869A (ja) * 1993-04-28 1994-11-04 Oki Electric Ind Co Ltd 半導体記憶装置
US5508965A (en) * 1993-09-14 1996-04-16 Fujitsu Limited Semiconductor memory device
US5539701A (en) * 1994-08-05 1996-07-23 Nippon Steel Corporation Sense circuit for semiconductor memory devices

Also Published As

Publication number Publication date
US5949729A (en) 1999-09-07
DE69726225D1 (de) 2003-12-24
EP0821364B1 (en) 2003-11-19
DE69726225T2 (de) 2004-08-19
JP3672384B2 (ja) 2005-07-20
KR980011418A (ko) 1998-04-30
JPH1040681A (ja) 1998-02-13
KR100338271B1 (ko) 2002-07-18
CN1191587C (zh) 2005-03-02
EP0821364A2 (en) 1998-01-28
EP0821364A3 (en) 1999-03-10
CN1172329A (zh) 1998-02-04

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