TW312082B - - Google Patents
Download PDFInfo
- Publication number
- TW312082B TW312082B TW085109427A TW85109427A TW312082B TW 312082 B TW312082 B TW 312082B TW 085109427 A TW085109427 A TW 085109427A TW 85109427 A TW85109427 A TW 85109427A TW 312082 B TW312082 B TW 312082B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser
- wiring board
- laser beam
- pulse
- processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 178
- 239000000758 substrate Substances 0.000 claims description 86
- 238000003672 processing method Methods 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- 238000005520 cutting process Methods 0.000 claims description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 10
- 230000001360 synchronised effect Effects 0.000 claims description 8
- 210000003462 vein Anatomy 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 3
- 230000001174 ascending effect Effects 0.000 claims 1
- 238000005422 blasting Methods 0.000 claims 1
- 239000013065 commercial product Substances 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 130
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 102
- 239000011521 glass Substances 0.000 description 76
- 239000011889 copper foil Substances 0.000 description 71
- 239000004020 conductor Substances 0.000 description 43
- 238000000034 method Methods 0.000 description 41
- 239000004744 fabric Substances 0.000 description 40
- 238000010586 diagram Methods 0.000 description 38
- 229910052802 copper Inorganic materials 0.000 description 32
- 239000010949 copper Substances 0.000 description 32
- 230000000694 effects Effects 0.000 description 21
- 230000003287 optical effect Effects 0.000 description 21
- 238000007747 plating Methods 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 230000008859 change Effects 0.000 description 16
- 239000011888 foil Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 230000006378 damage Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 230000000875 corresponding effect Effects 0.000 description 10
- 238000009434 installation Methods 0.000 description 10
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 10
- 238000007639 printing Methods 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 8
- 230000010355 oscillation Effects 0.000 description 8
- 239000007787 solid Substances 0.000 description 7
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000005202 decontamination Methods 0.000 description 5
- 230000003588 decontaminative effect Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 230000002079 cooperative effect Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 241000258920 Chilopoda Species 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- 101000905241 Mus musculus Heart- and neural crest derivatives-expressed protein 1 Proteins 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical group [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 description 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 description 1
- 101100008044 Caenorhabditis elegans cut-1 gene Proteins 0.000 description 1
- 241000238366 Cephalopoda Species 0.000 description 1
- 235000007516 Chrysanthemum Nutrition 0.000 description 1
- 244000189548 Chrysanthemum x morifolium Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 244000299461 Theobroma cacao Species 0.000 description 1
- 235000009470 Theobroma cacao Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 235000013330 chicken meat Nutrition 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- FPVGTPBMTFTMRT-NSKUCRDLSA-L fast yellow Chemical compound [Na+].[Na+].C1=C(S([O-])(=O)=O)C(N)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 FPVGTPBMTFTMRT-NSKUCRDLSA-L 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000013515 script Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006277 sulfonation reaction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/0554—Metal used as mask for etching vias, e.g. by laser ablation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/081—Blowing of gas, e.g. for cooling or for providing heat during solder reflowing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20119495 | 1995-08-07 | ||
| JP8059862A JPH09107168A (ja) | 1995-08-07 | 1996-03-15 | 配線基板のレーザ加工方法、配線基板のレーザ加工装置及び配線基板加工用の炭酸ガスレーザ発振器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW312082B true TW312082B (https=) | 1997-08-01 |
Family
ID=26400942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085109427A TW312082B (https=) | 1995-08-07 | 1996-08-05 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20030146196A1 (https=) |
| JP (1) | JPH09107168A (https=) |
| KR (1) | KR100199955B1 (https=) |
| CN (1) | CN1098022C (https=) |
| TW (1) | TW312082B (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI705749B (zh) * | 2019-01-01 | 2020-09-21 | 達航科技股份有限公司 | 印刷電路板的雷射加工方法及其雷射加工機 |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG86451A1 (en) * | 1999-11-30 | 2002-02-19 | Canon Kk | Laser etching method and apparatus therefor |
| US6281471B1 (en) * | 1999-12-28 | 2001-08-28 | Gsi Lumonics, Inc. | Energy-efficient, laser-based method and system for processing target material |
| US7671295B2 (en) | 2000-01-10 | 2010-03-02 | Electro Scientific Industries, Inc. | Processing a memory link with a set of at least two laser pulses |
| US6705914B2 (en) | 2000-04-18 | 2004-03-16 | Matsushita Electric Industrial Co., Ltd. | Method of forming spherical electrode surface for high intensity discharge lamp |
| JP4659300B2 (ja) * | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
| TW525240B (en) * | 2001-01-31 | 2003-03-21 | Electro Scient Ind Inc | Ultraviolet laser ablative patterning of microstructures in semiconductors |
| KR100512807B1 (ko) | 2001-04-05 | 2005-09-06 | 미쓰비시덴키 가부시키가이샤 | 적층재료의 탄산가스 레이저 가공방법 |
| JP5028722B2 (ja) * | 2001-07-31 | 2012-09-19 | 三菱電機株式会社 | レーザ加工方法及びレーザ加工機 |
| DE10145184B4 (de) * | 2001-09-13 | 2005-03-10 | Siemens Ag | Verfahren zum Laserbohren, insbesondere unter Verwendung einer Lochmaske |
| US20030155328A1 (en) * | 2002-02-15 | 2003-08-21 | Huth Mark C. | Laser micromachining and methods and systems of same |
| ES2639733T3 (es) | 2002-03-12 | 2017-10-30 | Hamamatsu Photonics K.K. | Método de división de sustrato |
| TWI221791B (en) * | 2002-04-02 | 2004-10-11 | Mitsubishi Electric Corp | Laser processing system and laser processing method |
| DE102004014277A1 (de) * | 2004-03-22 | 2005-10-20 | Fraunhofer Ges Forschung | Verfahren zum laserthermischen Trennen von Flachgläsern |
| TW200617794A (en) * | 2004-09-14 | 2006-06-01 | Oji Paper Co | Tape with built-in IC chip, production method thereof, and sheet with built-in IC chip |
| US8029501B2 (en) * | 2004-12-30 | 2011-10-04 | Attodyne Inc. | Laser selective cutting by impulsive heat deposition in the IR wavelength range for direct-drive ablation |
| CN1939644B (zh) * | 2005-09-30 | 2012-10-17 | 日立比亚机械股份有限公司 | 激光加工方法以及激光加工装置 |
| JP5030512B2 (ja) | 2005-09-30 | 2012-09-19 | 日立ビアメカニクス株式会社 | レーザ加工方法 |
| JP2008212999A (ja) | 2007-03-06 | 2008-09-18 | Disco Abrasive Syst Ltd | レーザー加工装置 |
| JP5553397B2 (ja) * | 2007-07-19 | 2014-07-16 | 日東電工株式会社 | レーザー加工方法 |
| BRPI1007356B1 (pt) * | 2009-01-28 | 2020-11-03 | Albany International Corp. | tecidos industriais para produção de não tecidos |
| EP2396138A4 (en) * | 2009-02-13 | 2013-12-04 | Videojet Technologies Inc | ADJUSTING LASER PARAMETERS |
| US8529991B2 (en) * | 2009-07-31 | 2013-09-10 | Raytheon Canada Limited | Method and apparatus for cutting a part without damaging a coating thereon |
| CN101969746B (zh) * | 2010-11-04 | 2012-05-09 | 沪士电子股份有限公司 | 印刷电路板镂空区局部除电镀铜的方法 |
| EP2662177A1 (en) * | 2011-01-05 | 2013-11-13 | Kiyoyuki Kondo | Beam processing device |
| JP5839876B2 (ja) * | 2011-07-27 | 2016-01-06 | 古河電気工業株式会社 | レーザ加工用銅板および該レーザ加工用銅板を用いたプリント基板、並びに銅板のレーザ加工方法 |
| CN103857207B (zh) * | 2012-11-30 | 2017-03-01 | 碁鼎科技秦皇岛有限公司 | 电路板及其制作方法 |
| JP2014120568A (ja) * | 2012-12-14 | 2014-06-30 | Showa Denko Packaging Co Ltd | 配線基板の表裏導通方法 |
| CN103909351A (zh) * | 2013-01-04 | 2014-07-09 | 欣兴电子股份有限公司 | 线路板以及此线路板的激光钻孔方法 |
| CN103286456B (zh) * | 2013-05-07 | 2015-07-01 | 大族激光科技产业集团股份有限公司 | 激光切割装置及切割方法 |
| JP6110225B2 (ja) * | 2013-06-25 | 2017-04-05 | ビアメカニクス株式会社 | レーザ穴明け加工方法 |
| CN103747636A (zh) * | 2013-12-24 | 2014-04-23 | 广州兴森快捷电路科技有限公司 | 镀金线路板引线回蚀的方法 |
| JP6134914B2 (ja) * | 2014-09-08 | 2017-05-31 | パナソニックＩｐマネジメント株式会社 | コンフォーマルマスク材料のレーザ加工方法 |
| CN106199830A (zh) * | 2015-05-08 | 2016-12-07 | 中兴通讯股份有限公司 | 光波导的制备方法及装置 |
| CN105578771A (zh) * | 2015-12-31 | 2016-05-11 | 广州兴森快捷电路科技有限公司 | 电路板内槽的加工方法 |
| CN112444162B (zh) * | 2019-09-02 | 2023-10-13 | 西安尚道电子科技有限公司 | 一种导电布精度靶板制造方法 |
| WO2021049624A1 (ja) * | 2019-09-13 | 2021-03-18 | 株式会社ゼファー | 回路成型部品及び電子機器 |
| CN113099615B (zh) * | 2021-04-01 | 2022-09-06 | 深圳市祺利电子有限公司 | 一种大尺寸线路板钻孔定位方法 |
| CN112992880B (zh) * | 2021-04-25 | 2023-08-15 | 江西沃格光电股份有限公司 | 一种Mini-LED背光板通孔的形成方法及电子设备 |
| CN114152614A (zh) * | 2021-12-24 | 2022-03-08 | 深圳技师学院（深圳高级技工学校） | 一种覆盖膜激光切割碳化程度的测量方法 |
| CN117464170B (zh) * | 2023-12-27 | 2024-04-02 | 武汉铱科赛科技有限公司 | 一种层间电连激光加工方法、设备、装置及系统 |
| CN119511056B (zh) * | 2024-10-18 | 2025-08-05 | 武汉铱科赛科技有限公司 | 一种盲孔可靠性测试方法、设备、装置及系统 |
| CN119589111A (zh) * | 2024-10-30 | 2025-03-11 | 杭州银湖激光科技有限公司 | 一种金刚石的激光切割装置及切割方法 |
| CN120404231B (zh) * | 2025-07-02 | 2025-09-05 | 乐捷家居股份有限公司 | 一种家具材料检测取样装置 |
-
1996
- 1996-03-15 JP JP8059862A patent/JPH09107168A/ja active Pending
- 1996-07-31 US US08/690,140 patent/US20030146196A1/en not_active Abandoned
- 1996-08-05 TW TW085109427A patent/TW312082B/zh not_active IP Right Cessation
- 1996-08-07 KR KR1019960032874A patent/KR100199955B1/ko not_active Expired - Lifetime
- 1996-08-07 CN CN96111476A patent/CN1098022C/zh not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI705749B (zh) * | 2019-01-01 | 2020-09-21 | 達航科技股份有限公司 | 印刷電路板的雷射加工方法及其雷射加工機 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030146196A1 (en) | 2003-08-07 |
| JPH09107168A (ja) | 1997-04-22 |
| KR100199955B1 (ko) | 1999-06-15 |
| CN1142743A (zh) | 1997-02-12 |
| CN1098022C (zh) | 2003-01-01 |
| KR970013540A (ko) | 1997-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW312082B (https=) | ||
| CN112369130B (zh) | 制造印刷电路的方法及装置 | |
| TWI819817B (zh) | 雷射處理設備、雷射處理工件的方法及相關配置 | |
| CN104797087B (zh) | 修复印刷电路迹线的方法和设备 | |
| EP2828028B1 (en) | Method and apparatus for forming fine scale structures in dielectric substrate | |
| KR102772971B1 (ko) | 레이저 가공 장치, 이를 작동하기 위한 방법, 및 이를 사용하여 피가공물을 가공하는 방법 | |
| JP5367162B2 (ja) | レーザ切断方法及びレーザ切断装置 | |
| JPH077273A (ja) | 多層回路におけるバイアホールの形成方法 | |
| JPH0371236B2 (https=) | ||
| ES2159541T3 (es) | Metodo de fabricacion de peliculas ultra-gruesas para controlar las propiedades termicas y de conduccion de corriente en circuitos hibridos. | |
| JP2002535701A (ja) | 薄膜にパターンを形成する方法 | |
| JP2005135964A (ja) | ウエーハの分割方法 | |
| PT1819478T (pt) | Método e sistema para marcação suave a laser | |
| CN1277648C (zh) | 激光钻孔加工方法 | |
| JP2002273585A (ja) | ビーム加工方法及びその装置、並びにタッチパネル基板の製造方法 | |
| CN111347179A (zh) | 一种紫外激光加工电子设备的透光微孔工艺及系统 | |
| JPS62248590A (ja) | マスクおよびこのマスクを用いたレ−ザマ−キング装置 | |
| JP4163319B2 (ja) | レーザ穴あけ加工装置用のデスミア方法及びデスミア装置 | |
| JP2001162607A (ja) | セラミックグリーンシートの加工方法及び加工装置 | |
| JP2000307215A (ja) | 配線板の加工方法 | |
| JP2003053580A (ja) | レーザ加工方法、プリント配線基板の製造方法及びプリント配線基板の製造装置 | |
| JPH0354885A (ja) | プリント基板の孔加工方法 | |
| De Silva et al. | The fabrication of foil masks using laser cutting | |
| JP2003017828A (ja) | 基板の切断方法 | |
| JP2002059282A (ja) | 液体中における曲がり穴の形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |