TWI221791B - Laser processing system and laser processing method - Google Patents

Laser processing system and laser processing method Download PDF

Info

Publication number
TWI221791B
TWI221791B TW092107352A TW92107352A TWI221791B TW I221791 B TWI221791 B TW I221791B TW 092107352 A TW092107352 A TW 092107352A TW 92107352 A TW92107352 A TW 92107352A TW I221791 B TWI221791 B TW I221791B
Authority
TW
Taiwan
Prior art keywords
laser
pulse
processing
peak power
laser beam
Prior art date
Application number
TW092107352A
Other languages
Chinese (zh)
Other versions
TW200305473A (en
Inventor
Tomohiro Kyoto
Miki Kurosawa
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200305473A publication Critical patent/TW200305473A/en
Application granted granted Critical
Publication of TWI221791B publication Critical patent/TWI221791B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/097Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

A laser processing system is proposed. It is characterized in having a pulse laser oscillator (2) and an optical system (3). The pulse laser oscillator (2) changes the input discharging power supplied between the electrodes (24) by switching the discharge command pulse constituted of a given frequency to render the characteristics of laser beam (6) variable. The optical system (3) is adapted to lead the laser beam (6) produced from the laser oscillator (2) to the work to be processed.

Description

1221791 五、發明說明(1) [發明所屬之技術領域] 本發明係關於··對被加工物的通孔、盲孔等進行開 孔、溝槽加工、外型切削等之雷射加工系統與雷射加工方 法’特別係關於:提升加工品質與生產力之雷射加工系統 與雷射加工方法。 [先前技術] 印刷配線基板係由:將複數張配設有導體層的絕緣基 材’以多層狀®層黏合之方式而組成。 此外,設置於各絕緣基材的導體層係藉由被稱之為通孔與 盲孔的導通孔而在其上下方向之任意的導體層間進行電性 連接。 第1 4圖為,用以說明上述之傳統多層印刷配線基板之剖面 圖,圖中,1為印刷配線基板,1 1 a、1 1 b為絕緣基材,12a 至c為導體層,1 3為金屬鍍層,1 4 a係為貫通絕緣基材1 1 a 的導體層1 2 a與導體層1 2 b之間的導通孔,而1 4 b則為,貫 通絕緣基材1 1 a的導體層1 2a與利用絕緣基材1 1 b疊層黏合 之導體層1 2 c之間的導通孔。 此外,導通孔1 4a—般被稱之為盲孔(B 1 i nd V i a Ho 1 e ); 而導通孔14b則被稱之為通孔(Through Hole有底孔)。 如第1 4圖所示之具備導通孔i 4 a、i 4 b之印刷配線基 板’在電子機器的要求高性能化下,其必須具備印刷配線 基板的多層化、小型化(高密度化)等優點,為滿足上述 之要求,而提出利用雷射光束對第丨4圖所示之導通孔 14a、14b進行加工之方法,並有所進步。1221791 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a laser processing system for making through holes, blind holes, etc. of a processed object, groove processing, shape cutting, and the like. The laser processing method is particularly related to a laser processing system and a laser processing method for improving processing quality and productivity. [Prior Art] A printed wiring board is composed of a plurality of insulating substrates' with a conductive layer disposed thereon, and the layers are laminated. In addition, the conductor layers provided on the respective insulating substrates are electrically connected between any of the conductor layers in the vertical direction through via holes called via holes and blind holes. Fig. 14 is a sectional view for explaining the above-mentioned conventional multilayer printed wiring board. In the figure, 1 is a printed wiring board, 1 1 a, 1 1 b are insulating substrates, 12 a to c are conductor layers, and 1 3 Is a metal plating layer, 1 4 a is a through hole between the conductor layer 1 2 a and the conductor layer 1 2 b through the insulating substrate 1 1 a, and 1 4 b is a conductor that penetrates the insulating substrate 1 1 a A via hole between the layer 12a and the conductive layer 12c laminated and bonded by the insulating substrate 1b. In addition, the via hole 14a is generally referred to as a blind hole (B 1 ind V a Ho 1 e); and the via hole 14b is referred to as a through hole (Through Hole has a bottom hole). As shown in FIG. 14, the printed wiring board having via holes i 4 a and i 4 b is provided with a high-performance electronic device, and it must be provided with multiple layers and miniaturization (high density) of the printed wiring board. In order to meet the above requirements, a method for processing the through holes 14a and 14b shown in FIG. 4 by using a laser beam is proposed, and has made progress.

314581.ptd $ 6頁 1221791 ----^ 五、發明說明(2) 弟1 5圖為’用以說明接 進行盲a $、ι π μ , a便用田射光束在印刷配線基板上 t « 為光學夺统==印刷配線基板,2為雷射振盈器,3 各機連工接台, 二7=二為束心314581.ptd $ 6 pages 1221791 ---- ^ V. Description of the invention (2) Brother 1 5 The picture is' used to explain the blind a $, ι π μ, a field beam on the printed wiring board t «For optical control == printed wiring board, 2 for laser oscillator, 3 for each machine connected to the table, 2 = 2 for beam center

V 束照射時的:為田:A束的峰值功率’η為脈衝寬度(光 、 τ1則為光束照射休止之時間。 以下說明實際的加工動作。 μ 用光學系統3進行由雷射振蘯器2所輸出之雷射光束 b的光束成形,并爲、、, ^ ., 从I 並傳廷、照射於加工對象物之印刷配線基 才反JL 〇 在匕日寺,蕾"M jik 土 、光束’係以例如第1 5圖所示之符號9的脈衝雷 射照射形能,Μ > π ^ ^ Α 心 對各孔照射數次(shot)的雷射脈衝。照射後 的雷射朵击 70來’利用熱溶解去除印刷配線基板1,以在印刷 配線基板上形成洞孔。 第1 6圖係站一 ^ ”、、貞不,以上述之加工方法所形成之印刷配線基板 的剖面圖的一範例。 在第1 6圖Φ ... ,r , τ ’ 1 5 a為加工上方孔徑,1 5 b為加工中段孔徑, 1 5 c則為力 加工下方孔徑,1 6為加工深度,1 7為加工樹脂殘 ^ ^ ’、”、、員示内面銅箔之損傷,其他與第1 4圖相同的部分 則標示相问+ ^ & 门之付唬,並省略其說明。 矛lj 田 _ 巾运射光束進行加工時,為確保加工品質,一般而 口 ’、于注意焦點集中在第丨6圖之加工孔徑1 5a至1 5c、加When V-beam is irradiated: It is field: The peak power of A-beam 'η is the pulse width (light, τ1 is the time when the beam is irradiated. The actual processing operation will be described below. Μ Optical system 3 is used for laser oscillator The laser beam b of the output laser beam 2 is shaped, and is ,,,, and ^. The printed wiring substrate irradiating the processing object from I and the court is reversed to JL. 〇 At Kori-ji Temple, Lei " M jik soil "Beam" is a pulse laser irradiation energy with the symbol 9 shown in Fig. 15 for example, M > π ^ ^ Α The laser pulse is irradiated to each hole several times (shot). The laser after irradiation Dope 70 came to 'remove the printed wiring board 1 by thermal dissolution to form holes in the printed wiring board. Figure 16 is a stand-up picture of the printed wiring board formed by the above-mentioned processing method. An example of a cross-sectional view. In Figure 16 Φ ..., r, τ '1 5 a is the upper hole diameter, 15 b is the middle hole diameter, 1 5 c is the lower hole diameter, and 16 is the hole diameter. Depth, 17 is the damage of the processing resin residue ^ ^ ', ", and the copper foil on the inner surface, the other is the same as in Figure 14 The same parts are marked with the same question + ^ & the explanation of the door is omitted, and its explanation is omitted. Lance lj 田 _ When carrying a beam of light for processing, in order to ensure the quality of the processing, the general focus is on the focus. The processing aperture of Figure 6 is 15a to 15c.

314581.ptd 第7頁 1221791 五、發明說明(3) 〜〜---- 工深度1 6、加工不良1 7、1 8等上,因此必 、, 與光束能量(峰值功率x脈衝寬度),以及、:制光束直按 時間,而其中特別是光束能量會因材質 ^束照射休止 損傷或扭曲,並影響電漿的產生等,;斗的構成造成 參數。 5艾為十分重要之控制 一般而言,將照射到每一個孔的井击处曰 第1次照射的光束能量設定為E i,雷射振湯所二里°又定為E t, 功率設定為Pi,透過光學系統所控制雷:出口的中峰值 峰值功率之傳達率設定為α i(以下,稠=射A振盪益出口每314581.ptd Page 7 1221791 V. Description of the invention (3) ~~ ---- Depth of work 1 6, Poor machining 1 7, 18, etc. Therefore, it must be equal to the beam energy (peak power x pulse width), And ,: make the beam directly according to time, and especially the beam energy will be damaged or distorted due to the material ^ beam irradiation, and affect the generation of plasma, etc .; the composition of the bucket causes parameters. 5 Ai is a very important control. Generally speaking, the energy of the first irradiation beam irradiated to the hole hitting each hole is set to E i, and the laser vibration soup 2 ° is set to E t, and the power is set. Is Pi, which is controlled by the optical system: the transmission rate of the medium-peak peak power at the exit is set to α i (hereinafter, thick =

)’光束脈衝寬度設定為w i,照射到每—彳〜光束傳達率 -η. ^ I 個孔洞的昭制· Μ 〇又疋為S時,如公式1所示, …、射宴 式1 ^pLixPi)xWi\ W i的方式,控 可藉由控制光束傳達率Q: i,峰值功率Pi 制光束能量E t。 在此’在傳統的雷射加工系統上, 於光學系統3中,依據形成光束模式時先束傳達率《 i係 學零件等的吸收所造成的損失而決定夺所產生的知失與光 變化該光束傳達率α丨的方法中 所示夕氺1 Ή、、任 G s •例如將第1 7圖 丁之先罩31、準直透鏡32所組成 圆 於光學系統3的方法。 物鏡(object),附加 在第1 7圖中,以光束直徑D丨傳播 3 2進耔枣氺德,志 兔曰]九係透過準直透鏡 Λ 再利用光罩3 1進行光束模式的成型(於加) 'The beam pulse width is set to wi, irradiated to each-η ~ beam transmission rate-η. ^ When the number of holes is Zhao · M 〇 and 疋 is S, as shown in Equation 1,…, shooting mode 1 ^ pLixPi) xWi \ W i, the control can control the beam transmission rate Q: i, the peak power Pi controls the beam energy E t. Here, on the traditional laser processing system, in the optical system 3, the loss of knowledge and light changes caused by the loss caused by the absorption of the first beam transmission rate when forming the beam pattern, i. The method of transmitting the light beam transmittance α 丨 is shown in FIG. 1, and G s. For example, a method in which the cover 31 and the collimating lens 32 shown in FIG. 17 are circled to the optical system 3. The objective lens (object) is attached to Figure 17 and propagates with a beam diameter D 丨 3 2 into the jujube, Zhitu said] Nine series through the collimating lens Λ and then use the mask 31 to shape the beam mode ( Huga

發明說明(4) 工點作出必要 此時的輸入光=2)。 形成前述光束貝與輸出光束模式體積之差,即為 錄項損ίί松式時所產生的損失。 、知失’係根據光罩31 U及光罩直徑D與由$|直^、、D、準直透鏡32的焦距f’ 定。 一 達準直透鏡3 2的距離L來決 例如:名本罢士 — 下,幾乎無任行,D較大,焦距f與距離L大致相等的情況 體積幾乎^#"貝失,輸出光束模式體積與輸入光束模式 戌卞接近一致,且朵φ/舍、各士 相反且九束傳達率ai變大。 死下,則較小,焦距f較長,且距離L較短的情 輪入光損失’輪出光束模式體積大幅小於 ^束模式體積,且光束傳達率α丨亦變小。 直經im f、比三個參數中,因光罩 D係由加工點上所必要之光束直徑,亦即加工孔徑來 此可^ : ϊ T @ S,而距離L可透過機械進行移動,因 、J私動距離L以變動光束傳達率α i。 因距離L的變化係利用伺服馬達來進行,因此必須 費數100ms以上的時間使其產生變化。 、 =外,峰值功率Pl係固定,或即使就算可變動也僅侷 ^對應額定值之± 2〇%左右,此外為使其變化,必須花 貢數1 00ms以上的時間。 以下,使用第1 8圖之二氧化碳雷射振盪器的模式圖進 行說明。圖中,2 1為雷射框體,22為加入了雷射媒介物 C02之混合氣體,23為交流電源,24為電極,25為激起放Description of the invention (4) The working point is necessary to make the input light at this time = 2). The difference between the volume of the beam pattern and the output beam pattern is the loss caused by the entry loss. The "knowledge" is determined based on the mask 31 U and the mask diameter D and the focal length f 'of the collimator lens 32, D, and D. As long as the distance L of the collimating lens 3 2 is determined, for example: the name is lost — almost no action, D is large, and the focal length f is approximately equal to the distance L. The volume is almost ^ # " The volume of the pattern is close to that of the input beam mode 且, and the φ / she and the opposite are different and the transmission rate ai of the nine beams becomes larger. In the case of death, it is smaller, the focal length f is longer, and the distance L is shorter. The light-in-light loss mode volume of the wheel-out beam mode is significantly smaller than the beam mode volume, and the beam transmission rate α 丨 also becomes smaller. Among the three parameters of straight through im f and ratio, since the mask D is determined by the necessary beam diameter at the processing point, that is, the processing aperture, ^: ϊ T @ S, and the distance L can be moved through the machine, because , J private movement distance L changes the beam transmission rate α i. Since the distance L is changed by a servo motor, it takes more than 100ms to change it. In addition, the peak power Pl is fixed, or even if it can be changed, it is only about ± 20% of the rated value. In addition, it must take more than 100ms to make the change. The following description uses the schematic diagram of the carbon dioxide laser oscillator shown in FIG. In the figure, 21 is the laser frame, 22 is the mixed gas with the laser medium C02, 23 is the AC power source, 24 is the electrode, and 25 is the excitation and discharge.

314581.ptd 第9頁 1221791 五、發明說明(5) --- 電,26為部份反射鏡,27為全反射鏡,28為規定雷射振盪 模式的孔徑(aperture),29則為雷射光束光 6則為輸 出的雷射光束。 在如第18圖所示之組成的二氧化碳雷射振盪器中,藉 由交流電源23的電壓投入在電極24之間形成激起放電25, C 0 2氣體則係在上位準位上激起。 將此時之放電所激起的粒子密度稱為放電電力穷度。在由 部,反射鏡26與全反射鏡27所組成之共振器内ς ,藉由激勵發射(Stimulated emission)上述激起之C02氣 體放大雷射光束,並以雷射光束光軸2 9為中心輸出雷射光 在此,一般而言使用二氧化碳雷射之氣體雷射時, 共振盪器的損失維持一定的情況下,雷射光束的峰值 與放電電力密度大致成等比例。 干 該放電電力密度,與從交流電源23投入電極24的 致呈等比例。 々’大 因此,傳統之雷射振盪器,係以控制施加於電極間 的方式促使放電電力密度產生變化。 壓 但電壓提升過高時,將使電源產生過大負載,而 故障與電極毁損。 夂電源 此外’電壓降得過低時將無法放電,並造成無法 光束的狀態。 # μ出雷射 因此,一般而言,變化電壓的範圍係限制在額定值 2 0 %左右;同時,雷射光束的峰值功率亦只能變 ± 〜2〇%左314581.ptd Page 9 1221791 V. Description of the invention (5) --- Electricity, 26 is a partial reflection mirror, 27 is a total reflection mirror, 28 is an aperture defining a laser oscillation mode, and 29 is a laser The beam light 6 is an output laser beam. In the carbon dioxide laser oscillator having the composition shown in FIG. 18, the voltage of the AC power source 23 is applied between the electrodes 24 to form an initiating discharge 25, and the C 0 2 gas is excited at an upper level. The density of particles excited by the discharge at this time is referred to as the discharge power tolerance. In the resonator consisting of the mirror 26 and the total reflection mirror 27, the laser beam is amplified by the stimulated C02 gas stimulated emission, and the laser beam is centered on the optical axis 29 of the laser beam. The output laser light is here. Generally, when a gas laser using a carbon dioxide laser is used, the loss of the common oscillator is maintained constant, and the peak value of the laser beam is approximately proportional to the discharge power density. The discharge power density is proportional to the discharge power from the AC power source 23 to the electrode 24. 々 ’large Therefore, the conventional laser oscillator promotes changes in the discharge power density by controlling the way it is applied between the electrodes. When the voltage is too high, the power supply will generate an excessive load, and the fault and the electrode will be damaged.夂 Power supply In addition, when the voltage drops too low, it will not be able to discharge and cause a state where the beam cannot be used. # μ 出 LAS Therefore, in general, the range of the changing voltage is limited to about 20% of the rated value; at the same time, the peak power of the laser beam can only be changed by ± ~ 20%

314581.ptd 第10頁 1221791 五、發明說明(6) 右0 率的範 得穩定 出之雷 激起放 雷射振 起放電 振盈閥 時間’ 落後會 變化的反應速度減緩,穩定放電需要 因此在每一脈衝(在低於脈衝雷射 )要變化峰值功率 圍内於瞬間 的光束能量 射脈衝時間 電之放電時 盪遲延的時 時,因放電 值,造成無 雷射振盪開 根據共振器 此外,由於為使電壓 數100ms以上的時严曰] 振盪器的最大振盪頻 的情況下,即無法^ 、此外,雷射所輪 為脈衝寬度),與從 之為放電寬度)減I 其理由係因:開始激 度X時間)低柃雷射 相較於激起放電開始 的現象。(當然此^ 成份等而有所不同) 寬度W i (以下簡稍 間寬度(以下簡稍 間寬度大致相等。 能量(放電電力密 法進行雷射輸出故 始時間會呈現落後 之構造,以及氣體314581.ptd Page 10 1221791 V. Description of the invention (6) The right 0 rate of the fan is stable, the laser is excited, the laser is excited, the discharge is triggered, and the time of the surge valve is slow. For each pulse (below the pulse laser), the peak energy range of the instantaneous beam energy is shot. Pulse time is delayed by the time of electric discharge. Due to the discharge value, no laser oscillation is caused. In order to ensure that the voltage is more than 100ms, the maximum oscillation frequency of the oscillator cannot be used. In addition, the laser wheel is pulse width), and the discharge width is subtracted from I. The reason is : Start excitement X time) low 柃 laser compared to the phenomenon of initiation of discharge initiation. (Of course, the composition varies, etc.) Width W i (the following width is approximately the same (the width is approximately the same below.) The energy (discharge power density is used for laser output, so the time will show a backward structure and gas

此外,藉由控制放電寬度,具體而言亦即藉 二電力的時間寬度’可隨意調整雷射脈衝寬度,係= 曰(在脈衝雷射振盪器的最大振盪頻率以下的範圍)推 切換的控制參數。 ㈤)适仃 但是,由於投入電力,有根據電源負載而決定之限制,故 脈衝寬度有其上限。In addition, by controlling the discharge width, specifically the time width of the second power, the laser pulse width can be adjusted at will, which means that (in the range below the maximum oscillation frequency of the pulse laser oscillator) the switching control is pushed parameter. ㈤) Suitable 仃 However, there is an upper limit on the pulse width because the input power is limited depending on the power supply load.

如上所述,在傳統之雷射加工系統中,因光束能量, 在峰值功率之變化上有其困難,因此由根據光學系光 束傳達率a i與光束脈衝寬度W i所控制’尤其在瞬間切換 條件時,光束脈衝寬度w i係唯一之控制參數。 接著,說明雷射照射之型態。As described above, in the conventional laser processing system, it is difficult to change the peak power due to the beam energy. Therefore, it is controlled by the optical system beam transmission rate ai and the beam pulse width Wi. At this time, the beam pulse width wi is the only control parameter. Next, the type of laser irradiation will be described.

314581.ptd 第11頁 1221791 五、發明說明(7) ' 雷射照射型態可大致區分為兩種:猝發(bur s t )加工,亦 即=第1 9圖所示,在開孔位置上決定光束照射位置後,僅 ,續照射雷射脈衝達到形成該孔所須之照射數s ;以及循 環加工’亦即如第2 〇圖所示,將開孔數設定為η,而將形 成開孔所需之照射數設定為s時,在開孔位置上決定光束 照射位置’重複進行狀s次之照射一次雷射脈衝的動作。 以押發加工為例,將各孔中之第k次照射到第(k + 1)次 照射所需的雷射振盪時間設定為Tok (在猝發加工中相當 於光束照射休止時間),第s次照射的脈衝寬度設定為 Ws ’及將第(卜1)個孔到第j個孔的定位時間設為Tg j時, η個開孔所需的加工時間几可以下列公式表示 般而言因Ws< < Σ Tok,而得以引出: ^ ...式 3 之公式。314581.ptd Page 11 1221791 V. Description of the invention (7) 'Laser irradiation types can be roughly divided into two types: burst (bur st) processing, that is, as shown in Figure 19, determined at the position of the opening After the beam is irradiated, only the laser pulse is continuously irradiated to reach the number of irradiations s necessary to form the hole; and the cycle processing 'that is, as shown in FIG. 20, the number of openings is set to η, and the openings are formed. When the required irradiation number is set to s, the beam irradiation position is determined at the position of the hole, and the operation of irradiating the laser pulse once for s times is repeated. Taking the pressing process as an example, the laser oscillation time required for the kth irradiation to the (k + 1) th irradiation in each hole is set to Tok (equivalent to the resting time of beam irradiation in burst processing), and the sth When the pulse width of each irradiation is set to Ws' and the positioning time from the (1st) hole to the jth hole is set to Tg j, the processing time required for the η openings can be expressed by the following formula: Ws < < Σ Tok, which leads to: ^ ... the formula of Equation 3.

Tg j的平均值設為Tg時, 將Tok的平均值設為τ〇, Tb的平均值Tba為: 因此’加工時間係由:雷射振盪時間To與照射次數s,以When the average value of Tg j is set to Tg, the average value of Tok is set to τ〇, and the average value of Tb is Tba: Therefore, the processing time is determined by the laser oscillation time To and the number of irradiations s.

314581.ptd 第12頁 1221791 五、發明說明(8) 及定位時間T g決定。 另一方面在循環加工中,若將各孔之第i次照射的脈 衝寬度設定為W i,將第(j - 1 )個孔到第j個孔的定位時間設 定為Tg i j時, 則進行η個開孔作業所需的加工時間Tc可以下列公式表 示:314581.ptd Page 12 1221791 V. Description of the invention (8) and positioning time T g are determined. On the other hand, in the cycle processing, if the pulse width of the i-th irradiation of each hole is set to Wi, and the positioning time from the (j-1) th hole to the j-th hole is set to Tg ij, then The processing time Tc required for the n opening operations can be expressed by the following formula:

Tdxjm . . ·式5 /*1 jZi 一般而言因W i < < T g i j,所以引出: rc ^ Σ Σ Tgij · · ·式 6 i = 1 j - 1 之公式。 將Tgi j的平均值設定為Tg時,Tdxjm... Formula 5 / * 1 jZi In general, Wi < < T g i j leads to: rc ^ Σ Σ Tgij · · Formula 6 i = 1 j-1 formula. When the average value of Tgi j is set to Tg,

Tc的平均值Tea可以下列公式表示:The average value Tea of Tc can be expressed by the following formula:

Tea = nx sxTg • •式7 因此,在循環加工中,加工時間係由:照射次數s與定位 時間Tg來決定。 在此說明循環加工與猝發加工之差異。 循環加工,由於可延長各孔之光束照射休止時間T q c,故 加工孔周邊受熱的影響較少,而得以提升加工品質。 相對於此,猝發加工時,各孔係在雷射振盪時間To中進行Tea = nx sxTg • • Equation 7 Therefore, in cycle processing, the processing time is determined by the number of irradiations s and the positioning time Tg. The difference between cycle processing and burst processing will be described here. Cyclic processing can prolong the dwell time T q c of the beam irradiation of each hole. Therefore, the periphery of the processing hole is less affected by heat, and the processing quality can be improved. In contrast, during the burst processing, each hole is performed during the laser oscillation time To

314581.ptd 第13頁 1221791 五、發明說明(9) — 加工’故光束照射休止時間Tqb較Tqc為短( ),且加工孔的四周容易產生受熱的影變。 此外關於加工時間,根據公式4與公式7,一般而古 Tg> To的條件下,因 " Tca-Tba=nx(s-l)x(Tg-T4>0 . · ·式8 > Tab 考慮在 故與循環加工相較,採用猝發加工時,其加工時間 生產力亦較佳。 如上所述,傳統之雷射加工系統,係藉由光罩 制光束直徑,而藉由放電電力密度與放電寬度,以 光學系統等控制光束能量,並藉由猝發加工與循環 選擇以及根據猝發加工時的雷射振盪頻率控制光束 止時間,而確保加工品質與生產力。 此外,在曰本特開平4一4 i 〇 9 ^虎公報中,揭示5 種材質的雷射加工,該雷射加工係進行具有第2啁 峰值功率的雷射輸出,貫通加工印刷配線基板1之一 箔1 4,再將f緣樹脂丨5加工至内面銅箔i 6。 一般而e ’因鋼箔的加工不易,因此必須增加 光束能量。 另一方面,由於銅箔斜 峰值功率高的雷射光束 漿體吸收雷射能量。 光線的反射率高,因此長時 時,容易產生電漿體,而導 此外, 特性。 銅箔的熱傳 導率大,具有可迅速加熱且迅速 較雉’ 直授控 及上^ 照射休 「加工-所示之 ^面銅 照射的 間照射 致該電 冷卻的314581.ptd Page 13 1221791 V. Description of the Invention (9)-Machining ’Therefore, the resting time Tqb of the beam irradiation is shorter than Tqc (), and the surrounding area of the machining hole is prone to heat. In addition, regarding the processing time, according to formula 4 and formula 7, under the condition of general and ancient Tg > To, because " Tca-Tba = nx (sl) x (Tg-T4 > 0.) · Formula 8 > Tab is considered in Therefore, compared with cyclic processing, the processing time productivity is also better when using burst processing. As mentioned above, the traditional laser processing system uses a photomask to make the beam diameter, and the discharge power density and discharge width. The optical system is used to control the beam energy, and the processing quality and productivity are ensured by burst processing and cycle selection, and by controlling the beam stop time according to the laser oscillation frequency during the burst processing. In addition, Japanese Patent Laid-Open No. 4-4 i 〇 The 9th Tiger Gazette discloses laser processing of 5 materials. The laser processing is to perform a laser output with a second peak power, to process one of the foils 1 and 4 of the printed wiring board 1, and to apply f-edge resin. 5 Processed to the inner copper foil i 6. Generally, e 'because the processing of steel foil is not easy, it is necessary to increase the beam energy. On the other hand, because the copper foil slant peak power of the laser beam slurry absorbs the laser energy. Reflectivity Therefore, it is easy to generate plasma for a long time, and it also has characteristics. Copper foil has a large thermal conductivity, which can be quickly heated and quickly compared to the direct control and irradiation. Copper irradiates the electrical cooling

314581.ptd 第14頁314581.ptd Page 14

1221791 五、發明說明(10) 因此,一般認為,為貫穿銅箔,可採用在短時間内照射大 量光束能量的方法,亦即,係以照射峰值功率高且脈衝寬 度短的雷射光束(在第2 1圖中之S 1)的方法較為適合。 此外,與上述銅箔相較,絕緣樹脂較易加工,只須利 用少許能量即可進行加工,但是,一般而言由於使用於印 刷基板的絕緣樹脂的厚度較銅箔為厚,因此加工整體樹脂 所需之總能量必須隨之增大。 然而,如前述銅箔一般,於短時間内照射大量光束能量 (提高峰值功率)時,因熱傳導率小的絕緣樹脂無法朝深 度方向傳達熱能量,而使熱能量朝水平方向擴散之故 ,其結果不僅無法獲得希望之加工深度,還會產生如第24 圖所示的樹脂殘渣1 7或内部膨脹1 9的現象。 因此,為貫穿絕緣樹脂,一般認為以採用多次照射(在第 21圖中之S2至S6)低峰值功率之雷射光束的方法較為適 合。 如上所述,一般認為藉由選定所照射之雷射脈衝的各 項條件,可在不破壞加工品質的情況下,實施表層銅箔 1 2a之貫穿加工以及深達絕緣樹脂1 1之内面銅箔1 2b的貫穿 加工〇 然而,在實際加工中,當欲使用既有的雷射加工系統 時,通常會受到下列限制。 第一,在傳統之雷射加工系統,如上所述缺乏使峰值 功率大幅變化的方法,特別是無法在瞬間(在雷射振盪器 的最大振盪頻率以下的範圍内)使其產生變化。1221791 V. Description of the invention (10) Therefore, it is generally believed that in order to penetrate the copper foil, a method of irradiating a large amount of beam energy in a short time can be used, that is, a laser beam with high peak power and short pulse width (in The method of S 1) in Fig. 21 is more suitable. In addition, compared with the above-mentioned copper foil, the insulating resin is easier to process and can be processed with only a small amount of energy. However, in general, because the thickness of the insulating resin used for printed substrates is thicker than that of copper foil, the overall resin is processed The total energy required must be increased accordingly. However, like the aforementioned copper foil, when a large amount of beam energy is irradiated in a short period of time (increasing the peak power), the insulating resin with a small thermal conductivity cannot transmit the thermal energy in the depth direction, and the thermal energy is diffused in the horizontal direction. As a result, not only the desired processing depth cannot be obtained, but also the phenomenon of resin residue 17 or internal expansion 19 as shown in FIG. 24 may occur. Therefore, in order to penetrate the insulating resin, it is generally considered that a method of irradiating a laser beam with a low peak power multiple times (S2 to S6 in FIG. 21) is more suitable. As described above, it is generally considered that by selecting various conditions of the laser pulses to be irradiated, it is possible to carry out the penetration processing of the surface copper foil 12a and the copper foil that reaches the inner surface of the insulating resin 11 without destroying the processing quality. 1 2b penetrating processing. However, in actual processing, when the existing laser processing system is to be used, it is usually subject to the following restrictions. First, in the conventional laser processing system, as described above, there is a lack of a method for greatly changing the peak power, and in particular, it cannot be changed instantaneously (in a range below the maximum oscillation frequency of the laser oscillator).

314581.ptd 第15頁 1221791 五、發明說明(11) 第二,在傳統之脈衝雷射振盪器,由於電源容量等因 素,在輸出高峰值功率之雷射光束的振盪器無法輸出脈衝 寬度較長的雷射光束,反之,在輸出脈衝寬度較長的雷射 光束的振盪器,則無法輸出高峰值功率的雷射光束。 因此,在傳統之雷射加工系統,由於利用第2 2圖與第2 3圖 之雷射照射型態進行加工,故不易同時兼顧加工品質與生 產力,而必須犧牲某一方。 第2 2圖係顯示··使用第1 5圖之雷射振盪器2輸出高峰 值功率且短脈衝寬度(1至1 5// s )之雷射光束之傳統雷射振 盪器時的雷射照射型態與加工狀態。 如第2 2圖中之S 1 1,在第一次照射時使用峰值功率高 且脈衝寬度較短的雷射光束進行照射,以貫穿表面銅箔 12a° 而在進行絕緣樹脂1 1 a的加工時,係降低峰值功率,並照 射4次之雷射光束S 1 2至S 1 5。 此外,在進行第6次照射時,為除去殘留的樹脂,照射微 幅調高峰值功率之雷射光束1 6。 藉由第2 2圖所示之加工方式,即可獲得一定程度之加 工品質。 然而,如上所述,為大幅降低第2次照射以後的峰值功 率,而必須利用上述光學系統等,但由於無法瞬間產生變 化,故無法進行猝發加工。 因此,必須採用會導致生產力降低之循環加工以及增加照 射數之加工,而造成生產力大幅降低。314581.ptd Page 15 1221791 V. Description of the invention (11) Second, in the traditional pulsed laser oscillator, due to factors such as power supply capacity, the oscillator that outputs a laser beam with high peak power cannot output a longer pulse width. Laser beam, on the other hand, a laser beam with a longer pulse width cannot output a laser beam with high peak power. Therefore, in the traditional laser processing system, since the laser irradiation patterns shown in Figure 22 and Figure 23 are used for processing, it is not easy to balance processing quality and productivity at the same time, and one party must be sacrificed. Figure 22 shows the laser when using the traditional laser oscillator that uses the laser oscillator 2 of Figure 15 to output a high peak power and short pulse width (1 to 15 // s). Irradiation pattern and processing state. As in S 1 1 in Fig. 22, a laser beam with a high peak power and a short pulse width is irradiated during the first irradiation to penetrate the surface copper foil 12a ° and the insulating resin 1 1 a is processed. At this time, the peak power is reduced, and the laser beams S 1 2 to S 1 5 are irradiated 4 times. In addition, during the sixth irradiation, in order to remove the residual resin, a laser beam 16 with a slightly increased peak power was irradiated. Through the processing method shown in Figure 22, a certain degree of processing quality can be obtained. However, as described above, in order to significantly reduce the peak power after the second irradiation, the above-mentioned optical system or the like must be used, but the burst processing cannot be performed because it cannot change instantaneously. Therefore, it is necessary to adopt a cycle process that causes a decrease in productivity and a process that increases the number of shots, resulting in a significant reduction in productivity.

314581.ptd 第16頁 1221791 五、發明說明(12) 例如:孔數n= 1 0 0 0 0個’當斟酌條件切換所須時門之平均 定位時間ΤπΟ.ΟΟΙ秒(1kHz),照射數照射時i加工時 間為6 0秒,相較於假定可以相同照射數進行猝發加工 (Το = 〇· 〇〇〇5秒(2kHz))時的加工時間為3〇秒的情形,其 生產力僅達到1 / 2。 月7 … 第23圖顯示:以傳統之振盪器,於第丨5圖之雷 2’使用輸出峰值功率低(為第22圖中之振盪器的'“二下 )且脈衝寬度長(例如丨6至i 5 〇 ) 照射類型與加工型態。 )之田射先束時的雷射 如弟2 3圖之S 2 1所示,雖欲藓由力且枝 光束的脈衝寬度增加光束能雖量人,猎以由貫加穿長照射之雷射 故根據上述的理由,在未投入大於,功率在丨“以下, 射能量的光克&旦μ ΐ 第2圖所示之第1次照 C::的情況下’將不易貫穿。 時,將:導:必須將脈衝寬度加長到必要以上 問趣。;:光束,而使能量無法傳達至… 射光束Πί Β3面鋼落必須使用大能量的雷 卜卜 (在本例中係在第2次照射時貫穿表 丄值t功率低且脈衝寬度較長的雷射脈 卜欠照射;"I;;:,達内面鋼箱· 利用上述方式,雖^仃‘二射以除去殘留的樹脂。 可加工貫通表面鋼箔1 2a與絕緣樹314581.ptd Page 16 1221791 V. Description of the invention (12) For example: the number of holes n = 1 0 0 0 0 'the average positioning time of the gate when the conditions need to be switched τπ0.01.1 second (1kHz), the number of irradiation When the processing time is 60 seconds, compared with the case where the processing time is 30 seconds when the burst processing is assumed to be the same number of shots (Tο = 〇 · 〇〇〇〇05 seconds (2kHz)), the productivity is only 1 / 2. Fig. 7… Fig. 23 shows: With a traditional oscillator, Ray 2 'in Fig. 丨 5 uses a low output peak power (which is "" two times below "of the oscillator in Fig. 22) and has a long pulse width (for example 丨6 to i 5 〇) Irradiation type and processing type.) The laser when the field is first beamed is shown in S 2 1 in Figure 2 3. Although the force of the moss is strong and the pulse width of the branch beam increases the beam energy, Measure people and hunt for the long-lasting laser, so according to the above reasons, if the power is not greater than, the power is below 丨 ", the light gram of the energy & den μ ΐ The first time shown in Figure 2 In the case of C ::, it will not be easy to penetrate. When: will lead: the pulse width must be longer than necessary. Interesting. ;: Beam, so that energy cannot be transmitted to ... Beam Πί Β3 surface steel fall must use a high-energy Leibu Bu (in this example, the second time irradiation through the table value t low power and long pulse width The laser pulse is under-irradiated; "I;;:, to the inner surface of the steel box · Using the above method, although the two shots to remove the residual resin. Can be processed through the surface steel foil 1 2a and insulation trees

第17頁 1221791 五、發明說明(13) 脂1 1 a,但因對銅箔施加過多的能量,因此與第2 2圖所示 例相較下,其加工品質較易劣化。 此外,與第2 2圖所說明相同,由於無法瞬間改變峰值功 率,故僅能進行循環加工而無法進行猝發加工。 如上所述,加工利用材質完全不同之材料所構成之多 層化印刷配線基板時,若藉由傳統之雷射加工系統,將很 難同時兼顧加工品質與產量的提升。 此外,由於印刷配線基板種類繁多,且各加工内容也 因樹脂加工或銅箔、樹脂脂混合加工等而異,因此欲以單 台的雷射加工系統進行所有加工有其一定的困難度,同時 也必須耗費龐大的投資設備經費。 [發明内容] 本發明之目的係在解決上述課題,並對各種不同材質 的印刷配線基板,提供一種不僅不會降低產量且可提升加 工品質之雷射加工系統,以及使用該裝置之雷射加工方 法。 為達成上述目的,根據第一觀點,本發明係具備:藉 由切換所定頻率所構成之放電指令脈衝,變化投入於電極 間的放電電力,以變化雷射光束特性之脈衝雷射振盪器; 將該雷射振盪器所輸出之上述雷射光束,導引至被加工物 之光學系統。 此外,光學系統具備有:開關裝置,以使從雷射振盪 器所輸出之雷射光束,切換為藉由透過而應通過之可將上 述雷射光束之峰值功率予以改變之濾光器構件,以及光束Page 17 1221791 V. Description of the invention (13) Grease 1 1 a, but because too much energy is applied to the copper foil, compared with the example shown in Figure 22, its processing quality is more likely to deteriorate. In addition, as described with reference to Fig. 22, since the peak power cannot be changed instantaneously, only cycle processing can be performed and burst processing cannot be performed. As mentioned above, when processing a multi-layer printed wiring board made of materials with completely different materials, it is difficult to take into account both the processing quality and the increase in yield if a conventional laser processing system is used. In addition, because there are many types of printed wiring boards, and each processing content varies depending on resin processing, copper foil, resin grease mixed processing, etc., it is difficult to perform all processing with a single laser processing system, and at the same time, It must also consume huge investment equipment. [Summary of the Invention] The object of the present invention is to solve the above-mentioned problems, and provide a laser processing system that can not only reduce the yield but improve the processing quality for printed wiring boards of various materials, and laser processing using the device. method. In order to achieve the above object, according to a first aspect, the present invention includes a pulse laser oscillator that changes a discharge power input between electrodes by changing a discharge command pulse composed of a predetermined frequency to change a laser beam characteristic; The laser beam output by the laser oscillator is guided to an optical system of a workpiece. In addition, the optical system is provided with a switching device to switch the laser beam output from the laser oscillator to a filter member that can pass through and can change the peak power of the laser beam, And beam

314581.ptd 第18頁 1221791 五、發明說明(14) 穿透率相異之濾光器構件的適當路徑。 屮二:i具備有:在電極之間產生激起放電, 出运射光束之雷射振盪器; 電以振盪輸 光束導引至被加工物之光學 了 j關裝置,可將雷射 透過雷射振盪器所輸出之+射去 ^開關裝置,係藉由 值功率改為可變動之應通過的淚先哭^述雷射 光束牙透率相異之遽光器構件的適當路;構件,以及 此外,藉由開關裝置的開啟關閉,可在切搞 濾光器構件的路徑的同日寺,並控制被脈衝m矣至應通過 的脈衝寬度。 舒振盧之雷射光束 由所ΐ:車ί ί!射加工方☆,係屬於-種藉由切換 的放電電☆ ’並使用由可使雷射光束特二:電極間 低於雷射振盡器最大振盘“ ή度等,於每一脈衝中瞬間切換戶;; -人的田射脈衝峰值功率與脈衝寬射子 間等3項條件。 乂及九束照射休止時 ,在去除導體層時,係藉由接近雷射振i器最大 1脈衝^谁\的輸出且脈衝寬度為1至1 5// S之短脈衝寬度之第 之I略/^加I ’而在去除絕緣層日夺,係藉由上述第1脈衝 、、、W2至1/10的峰值功率輸出且脈衝寬度為16至2〇〇 s之長脈衝寬度的第2脈衝進行加工。 此外,係藉由切換放電指令脈衝,在一個脈衝的雷射314581.ptd Page 18 1221791 V. Description of the invention (14) Appropriate path of filter members with different transmittances. # 2: i is equipped with: a laser oscillator that generates a spark discharge between the electrodes and emits the emitted light beam; the electric optical device to guide the laser beam through the oscillating input beam to the processed object, which can pass the laser through the laser The + radiation switching device output by the radiation oscillator is to cry first by changing the value of power to a variable tear that should pass through. ^ The appropriate path of the calender components with different laser beam permeability is described. In addition, by turning on and off the switching device, it is possible to control the path of the filter member in Tongri Temple, and control the pulse width m 矣 to the pulse width to be passed. Shu Zhen Lu Zhi's laser beam is made by: ίί! The laser processing side ☆ belongs to a kind of discharge electricity that is switched by using ☆ 'and using it can make the laser beam special two: between the electrodes is lower than the laser vibration The maximum vibrating plate of the device is used to instantly switch between households in each pulse;-3 conditions such as the peak power of the field shot pulse and the pulse wide shot. When the nine-beam irradiation is stopped, the conductor is removed Layer, the insulation layer is removed by approaching the output of the laser oscillator's maximum 1 pulse ^ w \, and the pulse width of the short pulse width of 1 to 15 / S plus / ^ plus I '. Sundial is processed by the above-mentioned first pulse, the second pulse with a peak power output of W2 to 1/10 and a long pulse width with a pulse width of 16 to 200s. In addition, it is processed by switching discharge Command pulse, laser in one pulse

314581.ptd 第19頁 1221791 五、發明說明(15) 輸出期間Θ,將峰值功率設定為可變動,並 輸出之雷射光束進行加工。 …亥脈衝所 此外,係藉由具有:雷射振盪器之略最大峰值 1至1 5/Z s之短時間之第1領域、以及上述第i領域 畋且 的峰值功率且16至2〇〇// s之長時間之第 1脈衝的雷射輸出進行加工。 、戍的 [實施方式] 第1實施型態 第1、2圖,係關於第1實施型態,第i圖為用以說 1圖之雷射加工系統之模式圖,第2圖為用以說明控制 明的雷射照射形態之裝置之模式圖。 只 在第1圖中’ 6a、8a顯示由雷射振盪器2A所輸出之命 射光束與雷射照射形態,7a、9a顯示藉由光學系統械ς 後之雷射光束與雷射照射形態、,其他與第1 5圖相同的部二 則標示相同之符號並省略其說明。 刀 第2圖中4 1 a、4 1 b為放電指令脈衝群,4 2 a、4 2 bA 放電電力脈衝群,4 3 a、4 3 b為放電能量,4 4 &、4 4輸… 之雷射光束能量。 〜® 卜f h丨1為父流電源頻率,I u、i d為實效放電電 力密度,Nu、Nd為平均放電電力密度,Ds、…為放電寬 i射為♦值功率’Ws、W1為脈衝寬度,Ls、li顯示 雷射振盪遲延。 之氣所說明一般’在二氧化碳氣體雷射振盈器 之乱體雷射振堡哭φ ,岑# 直。。〒,當共振态損失維持一定程度時,係314581.ptd Page 19 1221791 V. Description of the Invention (15) During the output period Θ, the peak power is set to be variable, and the output laser beam is processed. ... In addition, the Hai pulse is based on a short period of the first area of the laser oscillator with a peak value of 1 to 15 / Z s and a peak power of 16 to 200. // The laser output of the first pulse for a long time is processed. [Embodiment] of the first embodiment Figs. 1 and 2 of the first embodiment are related to the first embodiment. Fig. I is a schematic diagram of the laser processing system of Fig. 1 and Fig. 2 is used for A schematic diagram of a device for controlling a bright laser irradiation form will be described. Only in the first figure, 6a and 8a show the laser beam and laser irradiation form output by the laser oscillator 2A, and 7a and 9a show the laser beam and laser irradiation form after the optical system is used. The other parts that are the same as those in FIG. 15 are marked with the same symbols and their explanations are omitted. In the second figure, 4 1 a and 4 1 b are discharge command pulse groups, 4 2 a and 4 2 bA are discharge power pulse groups, 4 3 a and 4 3 b are discharge energy, 4 4 &, 4 4 output ... Laser beam energy. ~ ® bu fh 丨 1 is the frequency of the parent current power supply, I u and id are the effective discharge power densities, Nu and Nd are the average discharge power densities, Ds,… are the discharge widths, and i is the power value 'Ws, W1 is the pulse width , Ls, li show the delay of laser oscillation. The description of the gas is generally used in the chaos of the carbon dioxide gas laser oscillator. . Alas, when the loss of resonance state is maintained to a certain degree, the system

314581.ptd 第20頁 1221791 五、發明說明(16) 控制放電電力密度與放電寬度,以變化從振盪器所輸出之 雷射光束的峰值功率與脈衝寬度。 由於放電電力密度與投入之電力呈一定的比例,因此 在先前之技術係藉由變化施加於電極間的電壓來變化放電 電力密度。 本實施型態,係關於一種雷射振盪器著眼在:投入電 力被區分為瞬間性之實行電力與平均性時間之平均電力, 且雷射光束的峰值功率係受平均性時間之平均電力所支 配,而在藉由將電壓設定為一定(將實效放電電力密度設 為一定)後,並控制每單位時間的放電電力脈衝數,以控 制平均放電電力密度,而使雷射光束之峰值功率產生變 化。 換言之,係根據印刷配線基板的被加工部的材質、材 料構成、加工厚度等,於各脈衝瞬間切換所照射之複數之 雷射脈衝的峰值功率、脈衝寬度以及光束照射休止時間的 3項條件。 在此,由於先前技術係使放電電力脈衝數維持一定 ,因此實效放電電力密度與平均放電電力密度形成1對之 比例關係,故根據電壓的變化,變化實效放電電力密度, 以控制平均放電電力密度。 以下,根據第2圖說明其作動。 首先,當以時間間隔1 / f P施予放電指令脈衝時,放電 電力脈衝(頻率f P)係與其同步由交流電源投入於電極間。 該放電電力脈衝的向度為瞬間性之貫效放電電力密度I ’314581.ptd Page 20 1221791 V. Description of the invention (16) Control the discharge power density and discharge width to change the peak power and pulse width of the laser beam output from the oscillator. Since the discharge power density is proportional to the input power, in the prior art, the discharge power density was changed by changing the voltage applied between the electrodes. This implementation mode is concerned with a laser oscillator focusing on: the input power is divided into the instantaneous power and the average power of the average time, and the peak power of the laser beam is controlled by the average power of the average time After setting the voltage to be constant (setting the effective discharge power density to be constant) and controlling the number of discharge power pulses per unit time to control the average discharge power density, the peak power of the laser beam is changed. . In other words, the three conditions of the peak power, the pulse width, and the resting time of the laser pulse to be irradiated are switched instantaneously at each pulse according to the material, material composition, processing thickness, etc. of the processed portion of the printed wiring board. Here, because the prior art keeps the number of discharge power pulses constant, the effective discharge power density and the average discharge power density form a one-to-one relationship. Therefore, the effective discharge power density is changed according to the voltage change to control the average discharge power density. . The operation will be described below with reference to FIG. 2. First, when a discharge command pulse is applied at a time interval of 1 / f P, a discharge power pulse (frequency f P) is inputted between the electrodes by an AC power source in synchronization therewith. The direction of the discharge power pulse is the instantaneous continuous discharge power density I ′

314581.ptd 第21頁 1221791 五、發明說明(17) 而平均時間者為平均放電電力密度N。 當施加於電極間的電壓設定為一定時,實效放電電力密度 亦變成一定,每單位時間所投入之放電電力脈衝數m愈 多,則平均放電電力密度愈高,雷射光束的峰值功率p亦 隨之提高。 例如:以短時間間隔(1 / f h )施予放電指令脈衝時,放電電 力脈衝(每單位時間所投入之放電電力脈衝數增多)係與其 同步藉由交流電源而以高頻率f h投入,而使平均放電電力 密度Nu增高,以輸出高峰值功率Pu的雷射光束。 相反地,以長時間間隔(1 / f 1 )施予放電指令脈衝時,放電 電力脈衝(每單位時間所投入的放電電力脈衝數變少)係與 其同步藉由交流電源而以低頻率Π投入,而使平均放電電 力密度Nd變低,以輸出低峰值功率Pd的雷射光束。 此外,如上所述藉由變化投入電力於電極内的時間, 即可變化雷射光束的脈衝寬度。 該電力之投入時間寬度D,可以下式表示 D= (1 / f p )x m 公式 9 因此,藉由控制上述放電指令脈衝間隔1 / f p與放電電力脈 衝數m,即可獲得任意的脈衝寬度。 如上所述,在本實施型態中,係藉由調變交流電源頻 率控制雷射光束之峰值功率,並藉由變化投入電力之時間 控制雷射光束之脈衝寬度,以獲得任意的雷射脈衝。 具體而言,藉由控制施予放電指令脈衝的時間間隔與 放電指令脈衝數,即可獲得任意的雷射脈衝。314581.ptd Page 21 1221791 V. Description of the invention (17) The average time is the average discharge power density N. When the voltage applied between the electrodes is set to a constant value, the effective discharge power density also becomes constant. The more the number of discharge power pulses m per unit time, the higher the average discharge power density and the peak power p of the laser beam. With it. For example, when a discharge command pulse is given at a short time interval (1 / fh), the discharge power pulse (increasing the number of discharge power pulses input per unit time) is synchronized with the high-frequency fh input through the AC power supply, so that The average discharge power density Nu is increased to output a laser beam with a high peak power Pu. In contrast, when the discharge command pulse is applied at a long interval (1 / f 1), the discharge power pulse (the number of discharge power pulses input per unit time becomes smaller) is synchronized with the AC power at a low frequency Π. , So that the average discharge power density Nd becomes low to output a laser beam with a low peak power Pd. In addition, as described above, the pulse width of the laser beam can be changed by changing the time when the electric power is input into the electrode. The power input time width D can be expressed by the following formula: D = (1 / f p) x m Equation 9 Therefore, by controlling the discharge command pulse interval 1 / f p and the discharge power pulse number m, an arbitrary pulse width can be obtained. As described above, in this embodiment, the peak power of the laser beam is controlled by adjusting the frequency of the AC power supply, and the pulse width of the laser beam is controlled by changing the time of inputting power to obtain an arbitrary laser pulse. . Specifically, an arbitrary laser pulse can be obtained by controlling the time interval of the discharge command pulse and the number of discharge command pulses.

314581.ptd 第22頁 1221791 五、發明說明(18) 此外’根據本發明,藉 之脈衝寬度,在脈衝寬度較 ’而在一定的電源負載範圍 圍的效果。 由在峰值功率較高時設定較短 長時設定較低之峰值功率 内,具有擴大脈衝波形選擇範 藉由上述控制’可任意變化各雷射脈衝的峰值功率與 脈衝寬度,並獲得任意之雷射照射形態8 a,利用光學系統 3使所獲得之雷射照射形態^形成光束,做為雷射照射形 恶9 a傳送至加工對象物之印刷配線基板1,以進行加工。 以下,說明使用上述之雷射加工系統之猝發加工方 法。 舉例說明與第2 1圖相同之印刷基板的加工,亦即由第1層 之表面銅箔1 2 a、第2層之絕緣樹脂1 1 a、第3層之内面銅箔 1 2 b所構成之印刷基板進行加工之情況。 第3圖為,顯示雷射光束的照射形態之模式圖,第4圖為說 明此時之加工狀態的模式圖。 在第3圖中,S3 1至S3 3為各孔之第1至第3次照射之雷射光 束’各面積係顯示光束能量。 此外,P為峰值功率、W為脈衝寬度、To為雷射振盪時間、 Tg為定位時間。 在第4圖中,1 2 a為表面銅结,Π a為絕緣樹脂,1 2 b為 内面銅箔,2 0為加工預定位置,1 4 a為加工後的盲孔,S 3 1 至S3 3分別為第1至第3次照射之雷射脈衝波形、al至a3分 別為藉由第1至第3次照射之照射雷射光束進行加工之被加 工部。314581.ptd Page 22 1221791 V. Description of the invention (18) In addition, according to the present invention, the effect of the pulse width is wider than the pulse width within a certain power supply load range. From setting the peak power at a higher peak power to a shorter peak power at a shorter length, it has the option of expanding the pulse waveform. With the above control, the peak power and pulse width of each laser pulse can be arbitrarily changed, and an arbitrary lightning can be obtained. The radiation irradiation pattern 8 a is formed by using the optical system 3 to obtain the obtained laser irradiation pattern ^ as a laser irradiation pattern 9 a and transferred to the printed wiring board 1 as a processing object for processing. Hereinafter, a burst processing method using the above-mentioned laser processing system will be described. For example, the processing of the same printed circuit board as in Figure 21 is illustrated, that is, it is composed of the first layer of copper foil 1 2 a, the second layer of insulating resin 1 1 a, and the third layer of inner copper foil 1 2 b When the printed circuit board is processed. Fig. 3 is a schematic diagram showing the irradiation form of the laser beam, and Fig. 4 is a schematic diagram showing the processing state at this time. In Fig. 3, S3 1 to S3 3 are laser beams' for each of the first to third irradiations of each hole, and each area indicates the beam energy. In addition, P is the peak power, W is the pulse width, To is the laser oscillation time, and Tg is the positioning time. In Figure 4, 1 2 a is the surface copper junction, Π a is the insulating resin, 1 2 b is the inner copper foil, 20 is the planned processing position, 1 4 a is the blind hole after processing, S 3 1 to S3 3 are laser pulse waveforms of the first to third irradiations, and a1 to a3 are processed portions processed by the laser beams of the first to third irradiations, respectively.

314581.ptd 第23頁 五、發明說明(19) 在本實施型態中,使用第 配合印刷配線基板之材質或圖所不之雷射照射形態, 脈衝中瞬間切換雷射光束之加工厚度等,於各 照射休止時間之各條件,並 =士、脈衝寬度以及光束 以達到縮短加工時間的目的。a使用猝發加工方法, 以先前技術所說明之材料盥雷射朵击沾 利用第3、4圖說明本實施型態^|,束的關係為前提, 首先,以第1次照射之雷田、σ工方法。 箔1 2a之雷射脈衝,Α^先束S3 1做為加工第1層銅 式貫通第丨層丄為:::: = =並以安定之* 絕缘桝 n 人妝射之雷射光束s 3 2做為加工第2声之 、也緣樹脂11 a的雷射脈衝,為 勺刀π工弟z層之 並達到提升生產力之目的脂之條件’ 〇 · 5 k W程度),且脈衝宽产_ η 率低(0 · 0 5至 衝。 度車又長(80至2 0 0// s程度)的雷射脈 該雷射脈衝與第2 1圖相显,斟笛 設定為1/6以下的低峰值功率十且第”'射的雷射脈衝,係 射脈衝,因此在第21圖t,為4 ”脈衝寬度的雷 次的雷射光束’但根據本發:m必須照射複數 旅藉由加長脈衝寬度朝直徑方向擴散, 持加工孔徑的情況下, 又乃门即了在保 其結果,由於可在减仅/射貫通絕緣樹脂。 、 保加工品質之下同時降低照射次數,314581.ptd Page 23 V. Description of the invention (19) In this embodiment, the material of the printed wiring board or the laser irradiation pattern not shown in the figure is used, and the processing thickness of the laser beam is instantly switched during the pulse. For each condition of the irradiation dwell time, it is equal to ±, pulse width, and beam to achieve the purpose of shortening the processing time. a Using a burst processing method, using the materials described in the prior art to describe the implementation of this method using Figures 3 and 4 ^ |, the relationship between beams is the premise. First, with the first irradiation of the field, σ 工 方法. For the laser pulse of foil 1 2a, A ^ first beam S3 1 is used to process the first layer of copper through layer 丨: ::: = = and with a stable * insulation 桝 n laser beam s of human makeup 3 2 is the laser pulse for processing the second sound and also the resin 11 a, which is the condition of the knife layer of the knife knife π and achieves the purpose of improving productivity '(about 0.5 kW), and the pulse width _ Η The rate is low (0 · 0 5 to rush. The laser pulse is long (80 to 2 0 0 / / s). The laser pulse is shown in Figure 21, and the flute is set to 1 Low-peak power below 6 and the "" laser pulse, the laser pulse, so in Figure 21 t, the laser beam of 4 "pulse width of the laser beam" but according to the present: m must irradiate a complex number By increasing the pulse width to spread in the diameter direction, and keeping the processing aperture, the results are immediately maintained, because it can reduce / shoot through the insulating resin. To reduce the number of irradiations while maintaining processing quality,

314581.ptd 第24頁 1221791 五、發明說明(20) 並節省多餘之光击日召加^士士 接著,以楚束”,、射休間,而得以提升生產力。 按君 Μ弟3次照射之雷射 2次照射中未被雷射光去束〃S33做為用以加工在第 衝,由於昭射+ 矛、之絕緣樹脂11 a的雷射脈 :二:以量::導::層㈣的損傷,故照射能 以高於第2次照制樹脂殘留量,峰值功率 次照射之峰值功率(〇 " ;k .上;因此乃照射略高於第2 A s程度)之雷射脈衝·。 恤度)且脈衝寬度較短U至30 如上所述在本實施型態中,使 時,利用照射3次之雷射光束,即可述之印刷^ 質,並減低照射次數。 ”良好的加工。口 總結以上敘述,根據本實施型態, 板之材質、與材料構成,在低於 射据;"配、:基 最佳化,而於瞬間變化峰::率力羊例 生產力的效果。 提升加工口口貝與 例如:孔數η= 1 〇 〇 〇 〇個、配合條件 均1位時間了。= Ο.οοΜ秒(2kHz)、照:之平 工時間為15秒,與第2〇圖之雷射照射 '3射時’加 較,短縮了 45秒。該種方 < ,在以高衣加工相 材質多層化之印刷配線基板的開孔加工;方;;;行藉不同 效果。 丄時,特別可發揮其 此外,以上敘述雖針對盲孔加工進行說 明,但同樣314581.ptd Page 24 1221791 V. Description of the invention (20) and save the extra light to hit the Japanese soldiers, and then to the Chu, ", shoot off, and improve productivity. According to the three exposures In the 2 laser irradiations, the laser light is not beamed. S33 is used to process the laser pulse in the first punch. Because of the laser + spear, the insulating resin 11 a laser pulse: two: by volume :: guide :: layer Radon damage, so the irradiation power can be higher than the residual resin content of the second shot, the peak power of the peak power of the second shot (0 " k. On; so the irradiation is slightly higher than the second A s level) laser Pulses .. Degree) and shorter pulse widths U to 30. As described above, in this embodiment, by using a laser beam irradiated three times, the printing quality can be described and the number of irradiations can be reduced. " Good processing. To summarize the above description, according to this implementation mode, the material and composition of the board are below the shooting data; " matching :: base is optimized, and the peak of the instantaneous change :: rate of power is the effect of productivity. Raise the processing mouth and shell, for example: the number of holes η = 100, the matching conditions are 1 digit time. = 〇.οοΜ seconds (2kHz), the working time of the photo: 15 seconds, compared with the laser irradiation '3 shots' in Figure 20, shortened by 45 seconds. This kind of method < is used for the hole-cutting processing of printed wiring boards with multiple layers made of high-coat processing materials; the method has different effects. In particular, it can be used for a long time. In addition, although the above description is about the blind hole processing, it is the same.

314581.ptd 第25頁 1221791 五、發明說明(21) 地,將該方式適用於貫通孔加工時,可藉由:配合印刷配 線基板之材質或材料構成,在低於脈衝雷射振盪器的振盪 頻率的範圍内’使雷射光束的峰值功率與脈衝寬度、光束 知射休止時間於各脈衝中成為最佳化,而達到提升加工品 質與生產性的效果。 此外,上述敘述雖針對猝發加工進行說明,但當然亦 雖二”循環加工,相較於猝發加工,循環加工之生產力 雖低’但卻可獲得較安定且良好的加工品質之效果。 法。此外,亦可適用於併用猝發加工與循環加工之加工方 :質除::::光=照:休止時間’配合印刷配線基板 予以最& # 2 π ^ 將雷射脈衝之峰值功率與脈衝寬度 上,;,幅變化光束照射休止時間的方法 定且良好的 口 〇疑^加工,不僅可獲得安 此外^ 並可達到提升生產力的效果。 統,可利用!台雷射加工雷射加工系 -。 乐、、此芦方也多種印刷配線基板的加 在上述第1實施型態中,政^ 力密度與放電寬度,使雷射糸針對藉由變化平均放電電 生變化的情況進行說明,~ 2的峰值功率與脈衝寬度產 傳達率…在本實施型可變化光學系統的光束 達率。 心τ係考眼於光學系統的光束傳314581.ptd Page 25, 1221791 V. Description of the invention (21) When applying this method to the processing of through holes, it can be matched with the material or material of the printed wiring board to reduce the oscillation below the pulse laser oscillator. Within the frequency range, the peak power of the laser beam, the pulse width, and the quiescent rest time of the beam are optimized in each pulse, thereby achieving the effect of improving the processing quality and productivity. In addition, although the above description is for the burst processing, of course, although it is also two-cycle processing, compared with the burst processing, the productivity of the cycle processing is low, but it can obtain a more stable and good processing quality. It can also be applied to processing methods that use both burst processing and cyclic processing: Quality removal ::::: Light = Photo: Off time 'with printed wiring board to maximize &# 2 π ^ The peak power and pulse width of the laser pulse The method of deciding the resting time of the beam with varying amplitude is stable and good. It can not only achieve safety, but also achieve the effect of improving productivity. System, available! Taiwan Laser Processing Laser Processing System- Le, and this Lufang also added a variety of printed wiring substrates in the above-mentioned first embodiment, the political density and discharge width, so that the laser will explain the change in the electrical generation by changing the average discharge, ~ Peak power and pulse width output transmission rate of 2 ... In this embodiment, the beam transmission rate of the optical system can be changed. The heart τ system considers the beam transmission of the optical system.

1221791 五、發明說明(22) 第5圖、第6圖、笼7闰 唾 關之圖,第5圖為說明二夕8圖、係與第2實施型態相 第6圖為說明和4ϊ 本§ 之雷射加工系統之模式同 弟6Η為況月控制雷射照射形 才、式圖, 示做為控制雷射照射形雖之之#置之杈式圖,第7圖顯 模式圖二第8圖為物鏡之;乍動圖。吏 < 物鏡的其中一例的 光束=:圖中’ 45a、45b為利用光學系統成形後之雷射 在第7圖、第8圖中,33為可隨時變化雷 之控制裝置之物鏡,34為用以適當變更入於束傳達率 射光束6b路徑的光學式高速開關元件,可上鏡33之雷 雷射光之雷射峰值功率之光束傳為可文化入射之 異之半透明反射鏡,36為用以逐、羊)各為相 之雷射光的阻尼器。 及收丰透明反射鏡35所反射 此外,,求說明之方便性,而以37a、37卜Μ 開關元件34a、34b變更路徑之雷射光,。 。兒月利用 以:°兒月由本貫轭型悲之光學系統輸出至工 雷射光束的峰值功率與脈衝寬度的變化。 .之 首先第6圖說明變化光束傳達率時之 與脈衡寬度的變化動作。 τ值刀手 ’假設光學系統之光束傳達率固定為100%(通 為明Λ將其設定為100%)時,由雷射振盡器 輸出之由射先束係有接以相同之峰值功率與脈衝寬度傳送 至加工點。 在此,當通過具有-定光束傳達率之物鏡時,雷射振1221791 V. Description of the invention (22) Figure 5, Figure 6, and Figure 7 of the cage, Figure 5 is a diagram explaining the 8th of the night, and is related to the second embodiment. Figure 6 is an illustration and a copy § The model of the laser processing system is the same as that of the younger brother 6Η, which shows the shape and pattern of the laser irradiation control. It is shown as the #zhizhizhi diagram of the control of the laser irradiation shape. Figure 8 is the objective lens; The light beam of one example of the objective lens =: '45a, 45b in the figure are lasers formed by using the optical system. In Figures 7 and 8, 33 is the objective lens of the control device that can change the laser at any time, 34 is The optical high-speed switching element used to appropriately change the path of the incident beam 6b is transmitted. The beam with the laser peak power of the laser 33 of the upper mirror 33 is transmitted to a translucent mirror with a different cultural incidence. 36 is A damper for laser light of each phase. And reflected by the harvesting transparent mirror 35 In addition, for convenience of explanation, the laser light whose path is changed by 37a, 37B switching elements 34a, 34b. . Utilization of child month: ° Child month output from the intrinsically yoke type sad optical system to the peak power and pulse width of the laser beam. First of all, Fig. 6 illustrates the operation of changing the pulse width when the beam transmission rate is changed. τ value knife hand 'Assuming that the beam transmission rate of the optical system is fixed at 100% (it is set to 100% by Ming Λ), the same peak power is transmitted from the laser beam to the laser beam. And the pulse width is transmitted to the processing point. Here, when passing through an objective lens with a constant beam transmittance, the laser vibration

314581.ptd 第27頁 1221791 五、發明說明(23) J器所輸f。之雷射光束中,# A%係透過物尹 所吸收,C%則反射物鏡(A+ B+ c= 1()、兄,6%係由物鏡 鏡而輸出之雷射光束為人%之雷射光 G 。結果,通過物 遂產生變化。例如第6圖所示田在輸 J7輪出之峰值功率 雷射光束44a的期間内,當光 2陳振盪器所輸出之 會由Pu變化成pm(< p ), ’ μ务低時,峰值功率 光束45a。 )而獲传脈衝寬度維持在Ws的雷射 ^外在雷射振盪器所輸出之雷射光束44h 中將光束傳達率瞬間降為0%時,可獲得之光束傳送途 pd、而脈衝寬度由以變 ^ 值功率維持在 如上所述在本實施型離 先束45b。 束傳達率,獲得任音的庵二^^係错由控制光學系統之光 缉射振盪器所輸出之雷射光. ^度仁為了變換 ’最大之峰值功率盥:ί ,獲侍任意的雷射脈衝 器所輪出之雷射光[取^ =衝寬度係決定於ά ·射振堡 的峰值功率度無法利用光學系統變更為其以上 之具=上二的光束傳達率以及脈衝寬度之方法 達率的物鏡33進行圖所示之可隨時變化雷射光束之傳 相里^ ί 33係由:光學式高速開關元件至34d;透過率 If: h透明反射鏡…、咖以及阻尼器斯構成。 為固定二=輸亡=物鏡33的雷射光束峰值功率與脈衝寬度 能下 丁况月,並假設高速開關元件係在啟動(ON )狀 心卜,而光產生偏移。314581.ptd Page 27 1221791 V. Description of the invention (23) f input by J device. Of the laser beam, # A% is absorbed by the object Yin, C% reflects the objective lens (A + B + c = 1 (), brother, 6% is the laser beam output by the objective lens is human% of laser light G. As a result, changes occur through the material. For example, as shown in Figure 6, during the period of the peak power laser beam 44a output from the J7 round, when the output of the light 2 Chen oscillator changes from Pu to pm (& lt p), 'When the μ is low, the peak power beam is 45a.) And the laser beam with the transmitted pulse width maintained at Ws ^ The laser beam 44h output by the external laser oscillator instantly reduces the beam transmission rate to 0 At%, the beam transmission path pd is obtained, and the pulse width is maintained at a variable power as described above in this embodiment 45b. Beam transmission rate, get the sound of any sound ^^ is the laser light output by the optical trapping oscillator of the control optical system. ^ Duren in order to change the 'maximum peak power: ί, serve any laser Laser light emitted by the pulsator [take ^ = punch width is determined by ά · the peak power of the oscillating fort can not be changed to more than the above using the optical system = upper two beam transmission rate and pulse width method reach rate The objective lens 33 performs the phase-transmission of the laser beam that can be changed at any time as shown in the figure. ^ 33 is composed of: optical high-speed switching element to 34d; transmittance If: h transparent mirror ..., coffee and damper. In order to fix the two, the peak power and pulse width of the laser beam of the objective lens 33 can be reduced, and it is assumed that the high-speed switching element is turned on (ON), and the light is shifted.

314581.ptd314581.ptd

第28頁 1221791 五、發明說明(24) -- 首先,開關元件34a呈開啟(ON)狀態時,雷射光束6b直接 形成雷射光束3 7 a,而傳送至開關元件3 4 c。 此時若關閉(OFF)開關元件34c,則雷射光束37a將直接傳 送至下一個開關元件3 4 d。 當開關元件34d,在光束傳送中由〇FF瞬間切換為⑽時,在 OFF期間的雷射光束雖會形成7b,而在〇_間的雷射光束 則產生偏向,而照射於阻尼器3 6。 當OFF的時間較短時,結果可獲得峰值功率高且脈衝 短的雷射脈衝7 b 1。 接著,當開關元件34a關閉(OFF),而開關元件3“開 啟(ON)時’雷射光束6b將通過開關元件34a而於開關元^ 34b產生偏向,並傳送至半透明反射鏡35a。 假設半透明反射鏡353的透過率譬如為5〇%時,雷射 3 7b將對應峰值功率7b,形成一半且脈衝寬度相同之雷射 而在34c開啟(0NM 之作動,結果獲得雷 雷射光束37b,傳送至開關元件34c 產生偏向,而傳送至開關元件3 4 d。 開關元件3 4 d係進行與上述說明相同 射脈衝7b2。Page 28 1221791 V. Description of the invention (24)-First, when the switching element 34a is in the ON state, the laser beam 6b directly forms the laser beam 3 7a and is transmitted to the switching element 3 4c. If the switching element 34c is turned OFF at this time, the laser beam 37a is directly transmitted to the next switching element 3 4 d. When the switching element 34d is switched from 0FF to FF instantaneously during beam transmission, the laser beam during the OFF period will form 7b, but the laser beam between 0_ will be deflected and irradiated to the damper 3 6 . When the OFF time is short, a laser pulse 7 b 1 with a high peak power and a short pulse can be obtained as a result. Then, when the switching element 34a is turned OFF and the switching element 3 is "ON", the laser beam 6b will be deflected by the switching element 34a through the switching element 34a and transmitted to the translucent mirror 35a. Assume For example, when the transmissivity of the translucent mirror 353 is 50%, the laser 3 7b will correspond to the peak power 7b, form a half of the laser with the same pulse width, and turn on at 34c (0NM operation, as a result, a laser beam 37b is obtained. The deviation is transmitted to the switching element 34c and transmitted to the switching element 3 4 d. The switching element 3 4 d performs the same pulse 7b2 as described above.

接著’當開關元件3 4 a、 6b會通過開關元件34a、34b 35b° 34b關閉(0FF)時,雷射光束 而傳送至半透明反射鏡 雷射光束 同之雷射光 假設半透明反射鏡35b2透過率譬如為25%時, 37c將對應峰值功率6b,形成1/4且脈衝寬度相Then 'when the switching elements 3 4 a, 6b are turned off (0FF) through the switching elements 34a, 34b 35b ° 34b, the laser beam is transmitted to the translucent mirror. The laser beam and the laser light are assumed to pass through the translucent mirror 35b2. For example, when the rate is 25%, 37c will correspond to the peak power 6b, forming 1/4 and the pulse width phase

314581.ptd314581.ptd

1221791 五、發明說明(25) 束。 之後,雷射光束3 7 c傳送至龆M ^ ^ 34d中進行與上述說明之作=件34d。並於開關元件 件34d開啟⑽)期間之雷:=:作動。亦即,開關元、 u I狀射於阻尼哭q fi。 畜ON的時間較長時,結果 w 之雷射脈衝7b3。 侍峰值功率低且脈衝寬度長 言叮t ΐ:上述說明係敘述控制_峰值功率之方法,但 nm方法控制2種或4種以上的峰值功率,以獲 !!!,峰!功率與脈衝寬度的雷射脈衝。 貝鈀型怨中,係將上述物鏡插入光學系統中,藉 ίςΐ切換光的〇N/OFF,將雷射振蘯器所輸出之雷射光束 "換f具備任意之峰值功率與脈衝寬度的雷射脈衝。 將上述光學系統搭載於第5圖所示之雷射加工系統 中::可獲得與第⑸施型態所示效果相同的效果,亦 I藉由配合印刷配線基板的材質、材料構成,而使雷射 φ之,值功率與脈衝寬度、光束照射休止時間於各脈衝 予以最佳化’即可獲得提升加工品質與生產力之效果。 曰 此外’亦可將上述光學系統與上述第1實施型態所說 ^之雷射振盪器組合以構成雷射加工系統(第9圖)。 藉此,可使雷射光束之峰值功率與脈衝寬度的變化更詳 細’且變化幅度更大。 因此所使用上述雷射加工系統,可藉由配合印刷配線基板 之材質、料料構成,更加擴大選擇範圍,使雷射光束之峰1221791 V. Description of the invention (25) bundle. After that, the laser beam 3 7 c is transmitted to 龆 M ^ ^ 34d to perform the same operation as described above = 34d. And when the switching element 34d is turned on i): =: Act. That is, the switching element, u I shoots at the damping cry q fi. When the animal is turned on for a long time, the laser pulse 7b3 of w results. The peak power is low and the pulse width is long. 叮: The above description describes the method of controlling the _peak power, but the nm method controls 2 or more peak powers to obtain !!!, the peak! Laser pulse with power and pulse width. In the case of the palladium type, the above objective lens is inserted into the optical system, and the laser beam output from the laser resonator is changed by switching the ON / OFF of the light to ON / OFF, which has an arbitrary peak power and pulse width. Laser pulse. The above-mentioned optical system is mounted in the laser processing system shown in FIG. 5: the same effect as that shown in the first application mode can be obtained, and the material and material composition of the printed wiring board are matched to make the The laser power φ, the value of power and pulse width, and the beam dwell time are optimized for each pulse ', and the effect of improving processing quality and productivity can be obtained. In addition, it is also possible to combine the above-mentioned optical system with the laser oscillator described in the first embodiment to form a laser processing system (Fig. 9). Thereby, the change in the peak power and pulse width of the laser beam can be made more detailed 'and the change amplitude can be made larger. Therefore, the laser processing system used above can further expand the selection range by matching the material and materials of the printed wiring board to make the laser beam peak.

314581.ptd 第30頁 1221791 五、發明說明(26) 值 而 功率與脈衝寬度,光束能量於每一脈衝中 ^ 達到即使面對複雜的材料構成,亦可掉此、為最佳化, 產力的效果。 升加工品質與生 第3實施型態314581.ptd Page 30 1221791 V. Description of the invention (26) value and power and pulse width, the beam energy in each pulse ^ In order to optimize even the complex material structure, productivity can be reduced. Effect. Improving Processing Quality and Production

第31頁 1221791 五、發明說明(27) 第3次照射中將雷射振盪器2 C輸出之雷射光束的峰值功率 予以降低並進行照射,藉由該種控制,即可與第1實施型 態一樣,獲得提升加工品質的效果。 第4實施型態 第1 1圖、第1 2圖係關於第4實施型態,第1 1圖為用以 說明本發明之雷射加工系統之模式圖,第1 2圖為用以說明 控制本發明之雷射脈衝波形之裝置之模式圖。 在第1 1圖中,46a至e為放電指令脈衝群,47a至e為放 電電力脈衝群’ 4 8 a至e為投入之放電能望’ 4 9 a至e為輸出 之雷射光束能量。 本實施型態的基本構想係著重於··如第1實施型態所 說明一般,在共振器損失維持固定的情況下,第11圖之雷 射振盪器2 E所輸出的雷射光束6e,係由平均放電電力密度 與放電寬度所決定,但亦適用於雷射振盪途中。 亦即,在概略動作上,可藉由第1 2圖所示之雷射脈衝波形 控制而獲得任意之雷射照射形態8 e。 以下,說明第1 2圖之作動。 此外,第1 2圖所示模式係適用於:上述第1實施型態之基 本構想,亦即,將共振器損失維持一定,並分別藉由平均 放電電力密度與放電寬度來控制峰值功率與脈衝寬度者。 此外,與第1實施型態相同,具體的控制方法係採用,調 變交流電源頻率以變化平均放電電力密度,而變化投入電 力時間以變化放電寬度的方法。 首先,以高頻率供予放電指令脈衝4 6 a,則每單位時Page 311221791 V. Description of the invention (27) In the third irradiation, the peak power of the laser beam output by the laser oscillator 2 C is reduced and irradiated. With this kind of control, it can be the same as the first embodiment The state is the same, and the effect of improving the processing quality is obtained. The fourth embodiment. Figures 11 and 12 are related to the fourth embodiment. Figure 11 is a schematic diagram illustrating the laser processing system of the present invention, and Figure 12 is a diagram illustrating control. The schematic diagram of the device of the laser pulse waveform of the present invention. In Fig. 11, 46a to e are discharge command pulse groups, and 47a to e are discharge power pulse groups '4 8a to e are input discharge hopes' 4 9a to e are output laser beam energy. The basic idea of this embodiment mode is focused on, as explained in the first embodiment mode, the laser beam 6e output from the laser oscillator 2E in FIG. 11 is maintained when the resonator loss is kept constant. It is determined by the average discharge power density and discharge width, but it is also suitable for laser oscillation. That is, in the outline operation, an arbitrary laser irradiation pattern 8e can be obtained by controlling the laser pulse waveform shown in Fig. 12. The operation of Fig. 12 will be described below. In addition, the mode shown in Figure 12 is suitable for: the basic idea of the first implementation mode, that is, maintaining the resonator loss constant, and controlling the peak power and pulse by the average discharge power density and discharge width, respectively Width person. In addition, as in the first embodiment, a specific control method is a method in which the frequency of the AC power source is adjusted to change the average discharge power density, and the input power time is changed to change the discharge width. First, the discharge command pulse 4 6 a is supplied at a high frequency.

314581.ptd 第32頁 1221791 五、發明說明(28) 間所投入之放電電力脈衝數將增多,而可獲得具高平均放 電電力密度之48a。 對於該放電能量4 8 a (N lx T1 )於雷射振盪遲延L1後,輸出 峰值功率高之光束能量49a(Plx W1)。 接著在沒有時間差(光束照射休止時間)的情況下連續供予 頻率微幅降低之放電指令脈衝4 6嫩,投入放電電力脈衝 4 7 b,以獲得放電能量4 8 b ( N 2x T 2 ),接著在未產生雷射振 盪遲延下,連接先前的49a,輸出光束能量49b(P2x W2)。 以下同樣地’在沒有時間差的情況下連續供予放電指令脈 衝46c、46d、46e後,對此獲得放電能量47c(N3x T3)、 47d(N4x T4)、47e(N5x T5)、並連接先前的49b,而輸出 光束能量 49c(P3x W3)、49d(P4x W4)、49e(P5x W5)。 其結果可獲得混合5種任意之峰值功率的雷射脈衝波形 〇 ^此外,與第2實施型態相同,將所獲得之雷射照射形 恶8e藉由光學系統3E形成光束,或利用適當之光學系統以 形成雷射照射形態9e的方式變化雷射光束波形。 亦即’係藉由在振盡途中控制用以控制第2實施型態所說 T之雷射光束波形之物鏡的開關作動,而獲得上述^之混合 多種峰值功率的雷射脈衝波形。 ΰ 如上所述,藉由將與第1、$ 2實施型態相同之構想適 ::雷射振盈途中’可獲得混合多種峰值功率之雷射脈衝 但是,相較於第卜第2實施型態,在缺乏高速且安定的控314581.ptd Page 32 1221791 V. Description of Invention (28) The number of discharge power pulses input during (28) will increase, and 48a with high average discharge power density can be obtained. For this discharge energy 4 8 a (N lx T1) after the laser oscillation delay L1, a beam energy 49a (Plx W1) with a high peak power is output. Then, in the case of no time difference (beam irradiation rest time), the discharge command pulse 46 which is slightly reduced in frequency is continuously supplied, and the discharge power pulse 4 7 b is input to obtain the discharge energy 4 8 b (N 2x T 2), Then, without the laser oscillation delay, the previous 49a is connected to output the beam energy 49b (P2x W2). In the same manner, after continuously supplying the discharge command pulses 46c, 46d, and 46e without a time difference, the discharge energy 47c (N3x T3), 47d (N4x T4), 47e (N5x T5) is obtained, and the previous 49b, and output beam energy 49c (P3x W3), 49d (P4x W4), 49e (P5x W5). As a result, it is possible to obtain a laser pulse waveform with a mixture of five arbitrary peak powers. In addition, as in the second embodiment, the obtained laser irradiation shape 8e is formed into a light beam by the optical system 3E, or an appropriate one is used. The optical system changes the laser beam waveform so as to form the laser irradiation pattern 9e. That is, the laser pulse waveform of the above-mentioned mixed multiple peak powers is obtained by controlling the switching operation of the objective lens for controlling the laser beam waveform of T in the second embodiment in the middle of vibration. ΰ As mentioned above, by applying the same concept as the first and $ 2 implementation types: "On the way to laser gain", laser pulses with a variety of peak powers can be obtained. However, compared to the second implementation type State, in the absence of high-speed and stable control

.ptd.ptd

1221791 五、發明說明(29) 制下,將導致每個脈衝不均的情況可能增多。 接著說明使用上述雷射加工系統之力曰〇工方 本實施型態之加工方法係適用於在第丨實施型態之加工方 法中設定更詳細之雷射脈衝波形條件的情形。’ 第,係:本發明之雷射加工系統適 之雷射光束照射形態之模式圖。 > 知# 第13圖中,第i次照射之雷射光束之光束能量Ei,當將存 在於第i次如射之u種峰值功率中的第v個峰值功率假設為 P i v、並將P i v所保持的時間寬度假設為w i v時,可獲得下 列公式1221791 V. Description of the invention (29) The situation that will cause unevenness of each pulse may increase. Next, the force of using the laser processing system described above will be described. The working method of this embodiment is applicable to the case where a more detailed laser pulse waveform condition is set in the processing method of the first embodiment. First, it is a schematic diagram of a laser beam irradiation form suitable for the laser processing system of the present invention. > 知 # In Fig. 13, the beam energy Ei of the laser beam irradiated at the i-th time is assumed to be the p-iv peak power of the v-th peak power among the u-type peak powers, and When the time width held by P iv is assumed to be wiv, the following formula can be obtained

Ei = 2 ^Piv x Wiv ) · · ·式 1 〇 V-1 在此,本發明之P i v、w i V均為可瞬間(雷射脈衝寬度的1 / 2 以下時間)切換的控制參數,係;根據加工内容利用上述方 法進行切換。 在第13圖中,S4卜S42分別、為第1次照射中的P1 lx WU、P21x W21的照射雷射光束,,S43為第2次照射中的P21 X W21的照射雷射光束。 說明有關作動。 照射光束S41至S43,係適用於對應第1實施型態所示 之S 3 1至S 3 3之各照射光束。 亦即,S41為峰值功率高且時間寬度短’ S42為峰值功率低 且時間寬度長,而S43,係峰值功率略高於S42且脈衝寬度Ei = 2 ^ Piv x Wiv) · · · Formula 1 〇V-1 Here, P iv and wi V of the present invention are control parameters that can be switched instantaneously (less than 1/2 of the laser pulse width). ; Use the above method to switch according to the processing content. In Fig. 13, S4 and S42 are respectively the laser beams of P1 lx WU and P21x W21 in the first irradiation, and S43 is the laser beams of P21 X W21 in the second irradiation. Explain the operation. The irradiation beams S41 to S43 are applicable to the respective irradiation beams S 3 1 to S 3 3 shown in the first embodiment. That is, S41 is the peak power is high and the time width is short. S42 is the peak power is low and the time width is long, while S43 is the peak power is slightly higher than S42 and the pulse width

314581.ptd 第34頁 此外,因S41a與S4 2係相 的照射數次可由3次減至2次。 五、發明說明(30) Μ之雷射光束。 藉由不同的雷射光束,可滹 ^ 工+」筏侍與第1實施 丄方法大致相同的加工处果 = :!!_貫通加:表面銅 去U脂lla’而藉由S43在不損傷_ 去除樹脂殘餘。 同之雷射脈 口此,具有降低光束照射休止時間的效^ 施型態更能夠縮短n個開孔所需的加工時 例如:在第1實施型態所示例中,加工時 於第1實施型,態的猝發加卫,預估可縮短 並提升1 · 5倍的生產力。 如上所述,藉由使用控制雷射脈衝访 統,可提升加工品質,並藉由降低照射类 休止時間)以達到提升生產力的效果。 此外’尚具有可獲得傳統雷射加工資 加工品質與生產力的兩種效果。314581.ptd P.34 In addition, the number of irradiations of the S41a and S4 2 series phases can be reduced from 3 to 2 times. V. Description of the invention (30) M laser beam. With different laser beams, ^ 工 + "can be processed in the same way as in the first implementation method =: !! _ through plus: surface copper to U grease lla 'and no damage by S43 _ Remove resin residue. In the same way, the laser pulse mouth has the effect of reducing the resting time of the beam irradiation. ^ The application type can further shorten the processing time required for n holes. For example, in the example of the first embodiment, the processing is performed in the first time. This type of burst protection is expected to shorten and increase productivity by 1.5 times. As mentioned above, by using the control laser pulse access system, the processing quality can be improved, and the effect of increasing the productivity can be achieved by reducing the dwell time of irradiation. In addition, there are two effects of obtaining the quality and productivity of traditional laser processing materials.

產之利用可會H 如上所述,本發明之雷射加工裝置, 基板等被加工物進行開孔加工。 形態所說明之加 I由S 4 2貫通加工 3箔1 2 b的情況下 衝,故每1孔所需 L,相較於第1實 間。 間為1 0秒,相較 5秒的加工時間’ L形之雷射加工系 t (減低雷射照射 丨統所無法達成之 係適用於對印刷As mentioned above, the laser processing device and substrate of the present invention perform hole processing as described above. In the case where the plus I is punched out by S 4 2 and 3 foils 1 2 b, the shape requires L for each hole, compared with the first solid. The processing time is 10 seconds, compared with 5 seconds. The laser processing system of L-shape is t (reduced by laser radiation, which cannot be achieved by the system is suitable for printing

314581.ptd 第35頁 1221791 圖式簡單說明 [圖式簡單說明] 第1圖係用以說明第1實施型態之雷射加工系統之模式 圖。 第2圖係顯示第1實施型態之雷射加工系統中用以說明 控制雷射照射形態之裝置之模式圖。 第3圖係顯示在第1實施型態之雷射加工系統之雷射加 工方法中所使用之雷射照射形態之模式圖。 第4圖係用以說明第3圖之雷射照射形態之雷射加工狀 態之模式圖。 第5圖係用以說明第2實施型態之雷射加工系統之模式 圖。 第6圖係顯示物鏡的光束傳達率的變化之狀態圖。 第7圖係顯示物鏡的構成之構成圖。 第8圖係顯示物鏡之光束傳達率及脈衝寬度的變化之 狀態圖。 第9圖係用以說明第2實施型態之雷射加工系統之模式 圖。 第1 0圖係用以說明第3實施型態之雷射加工系統之模 式圖。 第1 1圖係用以說明第4實施型態之雷射加工系統之模 式圖。 第1 2圖係顯示第4實施型態之雷射加工系統中用以說 明控制雷射照射形態之裝置之模式圖。 第1 3圖係將第4實施型態之雷射加工系統適用於猝發314581.ptd Page 35 1221791 Brief description of the drawings [Simplified description of the drawings] The first diagram is a model diagram for explaining the laser processing system of the first embodiment. Fig. 2 is a schematic diagram showing a device for controlling a laser irradiation form in the laser processing system of the first embodiment. Fig. 3 is a schematic diagram showing a laser irradiation pattern used in the laser processing method of the laser processing system of the first embodiment. Fig. 4 is a schematic diagram for explaining a laser processing state of the laser irradiation form in Fig. 3; Fig. 5 is a schematic diagram for explaining the laser processing system of the second embodiment. FIG. 6 is a state diagram showing a change in a beam transmission rate of an objective lens. FIG. 7 is a configuration diagram showing the configuration of the objective lens. Fig. 8 is a state diagram showing changes in the beam transmission rate and pulse width of the objective lens. Fig. 9 is a schematic diagram for explaining the laser processing system of the second embodiment. Fig. 10 is a model diagram for explaining the laser processing system of the third embodiment. Fig. 11 is a model diagram for explaining the laser processing system of the fourth embodiment. Fig. 12 is a schematic diagram showing a device for controlling a laser irradiation form in a laser processing system of a fourth embodiment. Figure 13 shows the laser processing system of the fourth embodiment applied to bursts.

314581.ptd 第36頁 1221791 圖式簡單說明 加工時顯示雷射光束的照射形態之模式圖。 第1 4圖係用以說明一般的印刷配線基板的開孔加工之 模式圖。 第1 5圖係用以說明傳統之印刷配線基板的開孔用雷射 加工系統之模式圖。 第1 6圖係用以說明以雷射進行開孔加工之加工品質之 刷配線基板的剖面圖。 第1 7圖係顯示由光罩與準直透鏡所構成之物鏡的構成 之構成圖。 第1 8圖係用以說明二氧化碳雷射振盪器之構成圖。 第1 9圖係用以說明傳統之印刷配線基板的開孔雷射加 工方法之猝發加工之雷射照射形態。 第2 0圖係用以說明傳統之印刷配線基板的開孔雷射加 工方法之循環加工之雷射照射形態。 第2 1圖係顯示傳統之雷射照射形態之模式圖與印刷配 線基板的剖面圖。 第2 2圖係顯示傳統之雷射照射形態之模式圖與印刷配 線基板的剖面圖。 第2 3圖係顯示傳統之雷射照射形態之模式圖與印刷配 線基板的剖面圖。 第2 4圖係顯示傳統之加工品質之印刷配線基板的剖面 圖。 1 印刷配線基板314581.ptd Page 36 1221791 Schematic description of the pattern showing the laser beam irradiation mode during processing. Fig. 14 is a schematic diagram for explaining a hole-cutting process of a general printed wiring board. Fig. 15 is a schematic diagram for explaining a conventional laser processing system for punching a printed wiring board. Fig. 16 is a cross-sectional view of a brushed wiring board for explaining the processing quality of laser drilling. Fig. 17 is a configuration diagram showing the configuration of an objective lens composed of a mask and a collimator lens. Figure 18 is a diagram illustrating the structure of a carbon dioxide laser oscillator. Fig. 19 is a diagram illustrating a laser irradiation pattern of a burst processing of a conventional open-hole laser processing method of a printed wiring board. Fig. 20 is a laser irradiation pattern used to explain the cyclic processing of the conventional laser processing method of the open-hole laser processing of the printed wiring board. Fig. 21 is a schematic diagram showing a conventional laser irradiation pattern and a sectional view of a printed wiring board. Fig. 22 is a schematic diagram showing a conventional laser irradiation pattern and a sectional view of a printed wiring board. Fig. 23 is a schematic diagram showing a conventional laser irradiation pattern and a sectional view of a printed wiring board. Fig. 24 is a sectional view showing a printed wiring board of conventional processing quality. 1 printed wiring board

314581.ptd 第37頁 1221791 圖式簡單說明 2、 2C、2D、2E雷射振盪器 3、 3C、 3D、 3E光學系統 4 加工台 5 控制裝置 6、 6a、 6c、 6d、 6e、 7、 7a、 7c、 7d、 8c、 8d、 9、 9a、 S31至S33、44a、44b 雷射光束 8、8 a、8 e、9、9 a 9 e、1 0 雷射照射形態 1 la 絕緣樹脂 12a、12b、13 表面銅箔、内面銅箔 14a 盲孔 2 0 加工預定位置 33 物鏡 34a、34b、34c、34d 開關元件 35a、35b 半透明反射鏡 36 阻尼器 射光束 e 放 e 放 e 放 e 雷 雷 被 交 實 37a、 37b、 37c 1 4 1 a、4 1 b、4 6 a至 42a、 42b、 47a至 43a、43b、48 a至 44a、44b、49 a至 4 5 a、4 5 b a 1至 a3 fh、fl Iu、 Id 電指令脈衝群 電電力脈衝群 電能量 射光束能量 射光束 加工部 流電源頻率 效放電電力密度314581.ptd Page 37 1221791 Brief description of the drawings 2, 2C, 2D, 2E Laser oscillator 3, 3C, 3D, 3E Optical system 4 Processing table 5 Control device 6, 6a, 6c, 6d, 6e, 7, 7a , 7c, 7d, 8c, 8d, 9, 9a, S31 to S33, 44a, 44b Laser beams 8, 8a, 8e, 9, 9a, 9e, 1 0 Laser irradiation form 1 la Insulating resin 12a, 12b, 13 Surface copper foil, inner copper foil 14a Blind hole 2 0 Processing target position 33 Objective lens 34a, 34b, 34c, 34d Switching element 35a, 35b Translucent mirror 36 Damper beam Beam e Put e Put e Put e Lei Lei 37a, 37b, 37c 1 4 1 a, 4 1 b, 4 6 a to 42a, 42b, 47a to 43a, 43b, 48 a to 44a, 44b, 49 a to 4 5 a, 4 5 ba 1 to a3 fh, fl Iu, Id electric command pulse group electric power pulse group electric energy beam energy beam beam processing section frequency power supply frequency efficiency discharge power density

314581.ptd 第38頁 1221791314581.ptd Page 38 1221791

314581.ptd 第39頁314581.ptd Page 39

Claims (1)

1221791 — 六、申請專利範圍 _ 1. 一種雷射加工系纟 構成之放電指i脈衝糸:U由切換由所定頻率所 力,並使雷射氺击 艾化技入於電極間之放電電 將該雷射挣ΐΐ性形成可變之脈衝雷射振蘯器; 被加工物之光^备益所輸出之上述雷射光束,引導直 兀*予糸統。 2.如申請專利範圍 統係具有開關裝置| ―每 系統,其中,光學系 雷射光束,切拖$ ·可藉由透過雷射振盪器所輸出之 3. 可變之應通卿雷射光束之峰值功率改為 濾光器構件的適當路^構件,以及光束穿透率相異之 一種雷射加工系絲 ^。 電,而振堡輸出雷射H二纟電極之間產生激起放 具有開關震;射振盈器; 之上述雷射光束, 3由透過δ亥雷射振盪器所輸出 率改為可變之應通過雷射光束之峰值功 相異之濾光器構件的,f、^ :: 以及光束穿透率 被加工物之光學系統^田徑,而將雷射光束引導至 4·如申請專利範圍第 5. 中,係利用開關裝置之或:,之雷射加工系統,其 光器構件之路徑的同時1關閉’在切換至應通過濾 束的脈衝寬度。 、,控制被脈衝振盪之雷射光 一種雷射加工方法 έ 放電指令脈衝,以變由切換由所定頻率所構成之 使用由可使雷射光束特旳放電電力,並 產生^化之雷射振盈器所輪1221791 — VI. Scope of patent application _ 1. A type of laser processing system discharge means i pulse 糸: U is switched by a predetermined frequency and the laser strikes the Aihua technology between the electrodes. The laser is capable of forming a variable pulse laser vibrator; the laser beam output by the light of the workpiece ^ Beiyi guides the system. 2. If the scope of the patent application is all with a switching device | ―Each system, in which the laser beam of the optical system is cut off $ 3. It can be output by passing through the laser oscillator 3. The variable should be laser beam The peak power is changed to an appropriate path of the filter member, and a laser processing wire with a different beam transmittance. The laser beam generated by the Zhenbao output laser H has a switching vibration between the two electrodes, which has a switching shock; a laser oscillator; the above laser beam, 3 is changed from the output rate transmitted by the delta laser oscillator to a variable The laser beam should be guided to 4 by the filter components with different peak powers of the laser beam, f, ^ :, and the optical system of the object to be processed by the beam transmittance, and the laser beam should be guided to 4. 5. The medium is the laser processing system that uses the switching device or :, and the optical path of the optical component is turned off at the same time when the switch is switched to the pulse width that should pass through the filter beam. A laser processing method that controls the laser light that is oscillated by pulses. The discharge command pulse is used to change the use of a predetermined frequency. The use of the laser beam can cause the laser beam to discharge electricity and generate laser vibration. Vessel 第40頁 、申請專利範圍 1之雷射光束進行加工的雷射加工方法, m:可在低於雷射振盪器最大振盪頻率的範圍 配合被加工物之材質、加工厚度等,於各脈衝中 :刀換所照射之複數次雷射脈衝的峰值功率與脈 、又’以及光束照射休止時間等3項條件。 .=1利_ 5項之雷射加工方法,其中,在去除 體層時,係藉由接近雷射振盪器最大峰值功率之輸 出以及具1至15# S之短脈衝寬度的第M衝進行加工' 而在去除絕緣層時,係藉由具有上述第丨脈衝之 宫1/2至1/10之峰值功率輸出且具16至2〇b s之長脈衝 寬度的第2脈衝進行加工。 •如申請專利範圍第5項之雷射加工方法,其中,係藉由 切換放電指令脈衝,在1個脈衝的雷射輸出期間内,將 峰值功率設定為可變動之峰值功率,並使用該脈衝所 輪出之雷射光束進行加工。 如申請專利範圍第7項之雷射加工方法,其中,係以具 有·雷射振盪器之略最大峰值功率及!至丨5// s之短時 間的第1領域;以及上述第1領域之略1 / 2至1 / 1 〇之峰值 功率及1 6至2 0 0// s之長時間的第2領域的1脈衝之雷射 輸出進行加工。On page 40, the laser processing method for processing the laser beam of the patent scope 1, m: It can match the material and thickness of the workpiece in the range below the maximum oscillation frequency of the laser oscillator in each pulse. : Three conditions including the peak power and pulse of multiple laser pulses irradiated by the knife change, and the rest time of the beam irradiation. . = 1 Lee_ Laser processing method of 5 items, in which, when the body layer is removed, the processing is performed by the M-th punch with a short pulse width of 1 to 15 # S when the output of the laser peak peak power is close to the maximum power of the laser oscillator. 'And when removing the insulating layer, the processing is performed by the second pulse having the peak power output of 1/2 to 1/10 of the first pulse palace and a long pulse width of 16 to 20 bs. • The laser processing method according to item 5 of the scope of patent application, wherein, by switching the discharge command pulse, the peak power is set to a variable peak power during the laser output period of 1 pulse, and the pulse is used The laser beam that is rotated out is processed. For example, the laser processing method in the seventh scope of the patent application, which is based on a slightly maximum peak power of the laser oscillator and! The first field in a short time to 5 // s; and the peak power of approximately 1/2 to 1/10 in the first field and the second field in a long time from 16 to 2 0 // s 1 pulse laser output for processing. .ptd 第41頁.ptd Page 41
TW092107352A 2002-04-02 2003-04-01 Laser processing system and laser processing method TWI221791B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002099536 2002-04-02

Publications (2)

Publication Number Publication Date
TW200305473A TW200305473A (en) 2003-11-01
TWI221791B true TWI221791B (en) 2004-10-11

Family

ID=28672020

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092107352A TWI221791B (en) 2002-04-02 2003-04-01 Laser processing system and laser processing method

Country Status (4)

Country Link
JP (1) JPWO2003084012A1 (en)
CN (1) CN100345348C (en)
TW (1) TWI221791B (en)
WO (1) WO2003084012A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732731B2 (en) 2006-09-15 2010-06-08 Gsi Group Corporation Method and system for laser processing targets of different types on a workpiece
US10307862B2 (en) 2009-03-27 2019-06-04 Electro Scientific Industries, Inc Laser micromachining with tailored bursts of short laser pulses
CN102107332B (en) * 2009-12-23 2013-11-06 深圳市大族激光科技股份有限公司 Laser punching method and system
JP5442130B2 (en) * 2010-08-31 2014-03-12 三菱電機株式会社 Laser processing method
CN102946046B (en) * 2012-11-22 2014-11-05 深圳市大族激光科技股份有限公司 Laser energy control method and system
JP6577575B2 (en) * 2015-04-15 2019-09-18 三菱電機株式会社 Laser diode drive power supply
JP6817716B2 (en) * 2015-09-03 2021-01-20 ビアメカニクス株式会社 Laser processing equipment and laser processing method
CN105817771B (en) * 2016-05-01 2020-10-16 佛山市嘉峻制衣有限公司 Laser cutting machine for reflective tape
JP6783165B2 (en) 2017-02-28 2020-11-11 ビアメカニクス株式会社 Laser processing equipment and laser processing method
JP2022128033A (en) * 2021-02-22 2022-09-01 住友重機械工業株式会社 Laser processing apparatus and laser processing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186378A (en) * 1981-05-11 1982-11-16 Mitsubishi Electric Corp Laser device
JP2819198B2 (en) * 1991-03-11 1998-10-30 ミヤチテクノス株式会社 Solid state laser power supply
JP3098398B2 (en) * 1995-05-19 2000-10-16 日本電気株式会社 Via hole forming method and laser beam irradiation device
JPH09107168A (en) * 1995-08-07 1997-04-22 Mitsubishi Electric Corp Laser processing method of wiring board, laser processing device of wiring board and carbon dioxide gas laser oscillator for wiring board processing
TW365559B (en) * 1997-03-21 1999-08-01 Mitsubishi Electric Corp Gas laser machining apparatus
JP2001085765A (en) * 1999-09-10 2001-03-30 Canon Inc Optical working machine
JP2002035979A (en) * 2000-07-24 2002-02-05 Mitsubishi Electric Corp Laser beam device and laser beam processing device
JP2002335063A (en) * 2001-05-09 2002-11-22 Hitachi Via Mechanics Ltd Method and apparatus for drilling printed board

Also Published As

Publication number Publication date
CN1659750A (en) 2005-08-24
TW200305473A (en) 2003-11-01
WO2003084012A1 (en) 2003-10-09
JPWO2003084012A1 (en) 2005-08-04
CN100345348C (en) 2007-10-24

Similar Documents

Publication Publication Date Title
TWI221791B (en) Laser processing system and laser processing method
KR100287526B1 (en) Method employing uv laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets
TW528636B (en) Micromachining with high-energy, intra-cavity Q-switched CO2 laser pulses
US6791060B2 (en) Beam shaping and projection imaging with solid state UV gaussian beam to form vias
US6541731B2 (en) Use of multiple laser sources for rapid, flexible machining and production of vias in multi-layered substrates
JP4642962B2 (en) Laser shock peening method
JP2001347388A (en) Laser beam machining device and method of machining
KR20060099517A (en) Laser processing of a locally heated target material
JPH02500891A (en) Drilling equipment and method
TW200900189A (en) Method of and apparatus for laser drilling holes with improved taper
WO2008150913A2 (en) Multiple laser wavelength and pulse width process drilling
JP2000512912A (en) Laser device with improved via processing speed
WO2007091989A2 (en) INCREASED LASER OUTPUT ENERGY AND AVERAGE POWER AT WAVELENGTHS BELOW 35nm
JP2009512553A (en) Synthetic pulse repetition rate machining for dual-head laser micromachining systems
TW498005B (en) Method and apparatus for laser drilling
JP3138954B2 (en) Via hole formation method
JP2003516625A (en) Circuit board processing system etched based on wavelength switchable laser
RU2003112229A (en) LASER DEVICE WITH HIGH PEAK POWER FOR LIGHT GENERATION IN THE VACUUM UV SPECTRUM AREA
TWI313631B (en) A method and system for laser drilling hole on a felxible printed circuit board
JP3413481B2 (en) Laser drilling method and processing apparatus
JP3485868B2 (en) Drilling method using ultraviolet laser
JP3830830B2 (en) Laser processing method
JP4163319B2 (en) Desmear method and desmear apparatus for laser drilling apparatus
JP2003285183A (en) Laser beam machining device and machining method
JP3343812B2 (en) Via hole forming method and laser processing apparatus

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent