TW200305473A - Laser processing system and laser processing method - Google Patents

Abstract

A laser processing system is proposed. It is characterized in having a pulse laser oscillator (2) and an optical system (3). The pulse laser oscillator (2) changes the input discharging power supplied between the electrodes (24) by switching the discharge command pulse constituted of a given frequency to render the characteristics of laser beam (6) variable. The optical system (3) is adapted to lead the laser beam (6) produced from the laser oscillator (2) to the work to be processed.

Description

200305473 β ~~ r \ 1 5 ·: Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to: drilling, groove processing, contour cutting, etc. of through holes, blind holes, etc. of a workpiece The laser processing system and the laser processing method are particularly related to the laser processing system and the laser processing method for improving processing quality and productivity. [Prior Art] A printed wiring board is composed of a plurality of insulating base materials with a conductive layer arranged thereon, and is laminated and laminated. In addition, the conductor layers provided on the respective insulating substrates are electrically connected between any of the conductor layers in the up-down direction through via holes called via holes and via holes. FIG. 14 is a cross-sectional view for explaining the above-mentioned conventional multilayer printed wiring board. In the figure, 1 is a printed wiring board, 1 1 a, 1 1 b are insulating substrates, and 1 2 a to c are conductor layers. 13 is a metal plating layer, 14a is a via hole between the conductive layer 12a and the conductive layer 12b of the insulating substrate 1a, and 14b is a conductive layer 1 penetrating the insulating substrate 1a A via hole between 2 a and the conductive layer 1 2 c laminated and bonded with an insulating substrate 1 1 b. In addition, the via hole 1 4 a is generally called a blind hole (B 1 ind V ia ο ο 1 e); v and the via hole 1 4 b is called a through hole (T hrough ο ο 1 e has a bottom hole). As shown in FIG. 14, a printed wiring board having vias 1 4 a and 1 4 b is required to have a high-performance electronic device, and it must be provided with a multilayered and miniaturized (high-density) printed wiring board. In order to meet the above requirements, a method for processing via holes 14a and 14b shown in FIG. 14 by using a laser beam is proposed, and some progress has been made.

314581.ptd Page 6 200305473 V. Description of the Invention (2) Figure 15 is a schematic diagram of a laser processing system used to perform blind or through-hole drilling operations on a printed wiring board using a laser beam. . In the figure, 1 is the printed wiring board of the object to be processed, 2 is the laser oscillator, 3 is the optical system, 4 is the processing table, and 5 is the control device that controls the entire system, and the devices are connected by cables. 6 and 7 are laser beams, an example of 9 series laser irradiation patterns, P i on laser irradiation pattern 9 is the peak power of the laser beam, W i is the pulse width (beam irradiation time), and T i is The time when the beam irradiation stops. The actual processing operation will be described below. The optical system 3 is used to shape the beam of the laser beam 6 output from the laser oscillator 2 and to transmit and irradiate the printed wiring board 1 to be processed. At this time, the laser beam is shown in FIG. 15 In the pulsed laser irradiation mode of symbol 9 shown, each hole is irradiated with laser pulses of several shots. After the irradiated laser beam, the printed wiring board 1 is removed by thermal dissolution to form a hole in the printed wiring board. Fig. 16 shows an example of a cross-sectional view of a printed wiring board formed by the above-mentioned processing method. In Figure 16, 15 a is the upper hole diameter, 15 b is the middle hole diameter, 15 c is the lower hole diameter, 16 is the processing depth, 17 is the processing resin residue, and the 18 series The damage of the inner copper foil is shown, and other parts that are the same as those in FIG. 14 are marked with the same symbols, and descriptions thereof are omitted. In order to ensure the processing quality when laser beam is used for processing, in general, the focus is on the processing apertures 1 5 a to 1 5 c in Figure 16.

S1 __ 314581.ptd Page 7 200305473 V. Description of the invention (3) Depth of work 1 6, Poor machining 1 7, 18, etc., it is necessary to control the beam diameter and beam energy (peak power X pulse width), and beam irradiation The rest time, and especially the beam energy will cause damage or distortion due to the material or the composition of the material, and affect the generation of plasma, etc., so it is a very important control parameter. Generally speaking, the energy of the beam irradiated to each hole is set to E t, the energy of the beam irradiated at the i-th time is set to E i, the peak power at the exit of the laser oscillator is set to P 1, The transmission rate of the peak power at the exit of the radio oscillator is set to ai (hereinafter, referred to as the beam transmission rate 4, the beam pulse width is set to Wi, and the number of irradiations to each hole is set to s, as shown in Equation 1. , Εί- ^ Εί = ^ hi ^ PihWi]. · !! The beam energy E t can be controlled by controlling the beam transmission rate ai, the peak power P i, Wi i. Here, in the traditional laser processing On the system, the beam transmission rate ai is in the optical system 3, and is determined by the loss caused when the beam pattern is formed and the loss caused by the absorption of optical components, etc. φ The method of changing the beam transmission rate ai includes, for example, changing An objective lens (ob ject) composed of a collimator lens 3 and a collimator lens 32 shown in Fig. 17 is added to the optical system 3. In Fig. 17, a light system propagating with a beam diameter Di is transmitted. After collimating the collimating lens 3 2 Beam mode molding with mask 31

314581.pid Page 8 200305473 V. Description of the invention (4) Make the necessary beam mode at the working point). The difference between the volume of the input beam pattern and the volume of the output beam pattern at this time is the loss generated when the aforementioned beam pattern is formed. This loss is determined based on the diameter D of the mask 31, the focal length f 'of the collimator lens 32, and the distance L of the mask diameter D from the mask 31 to the collimator lens 32. For example, when the mask diameter D is large, and the focal length f is approximately equal to the distance L, there is almost no loss. The volume of the output beam mode is almost the same as the volume of the input beam mode, and the beam transmission rate a i becomes larger. Conversely, when the diameter D of the mask is small, the focal length f is long, and the distance L is short, almost all losses are formed, the output beam mode volume is substantially smaller than the input beam mode volume, and the beam transmission ratio a i also becomes smaller. In the traditional processing system, among the three parameters of D, f, and L, the mask diameter D is determined by the necessary beam diameter at the processing point, that is, the processing aperture, and the focal length f is fixed, and the distance L can be Since it is moved by a machine, it can move the distance L to change the beam transmission rate ai. However, since the change in the distance L is performed by a servo motor, it must take several 100 m s or more to change it. In addition, the peak power P i is fixed, or even if it can be changed, it is limited to about ± 20% of the corresponding rated value. In addition, it takes more than 10 Oms to change it. The following description uses the schematic diagram of the carbon dioxide laser oscillator shown in FIG. 18. In the figure, 21 is the laser frame, 22 is the mixed gas with the laser medium C 0 2 added, 23 is the AC power supply, 24 is the electrode, and 25 is the excitation and discharge.

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31458] .pid Page 9 200305473 V. Description of the invention (5) Electricity, 26 is a partial reflection mirror, 27 is a total reflection mirror, 28 is an aperture defining a laser oscillation mode, and 29 is The optical axis of the laser beam, 6 is the output laser beam. In the carbon dioxide laser oscillator of the composition shown in Fig. 18, the voltage of the parent current source 23 is applied between the electrodes 24 to form an induced discharge 2 5 ^ C02 gas is on the upper level Aroused. The density of particles excited by the discharge at this time is called the discharge power density. Inside the resonator consisting of β partial mirror 26 and total reflection mirror 27, β is excited to emit (stimu 1 atedemissi ο η) the excited C 0 2 gas »to amplify the laser beam, and Laser beam optical axis 2 9 is the center to output laser light 6 ° Here, when using a carbon dioxide laser gas laser, the peak power and discharge of the laser beam are maintained while the loss of the common oscillator is maintained constant. Power density is roughly proportional. This discharge power density is approximately proportional to the power input to the electrodes 24 from the AC power source 23. Therefore, the conventional laser oscillator promotes a change in the discharge power density by controlling the voltage applied between the electrodes. * But if the voltage is too high, the power supply will produce an excessive load, which will cause the power supply barrier and electrode damage. In addition, if the voltage drop is too low, it will not be able to discharge and it will not be able to output the laser beam. Therefore, in general, the range of the changing voltage is limited to about 20% of the rated value; at the same time, the peak power of the laser beam can only change ± 20 ° / 〇 left

31458] .ptd Page] 0 200305473 V. Description of Invention (6) Right. In addition, in order to reduce the response speed of the voltage change by more than 100 ms, a stable beam energy cannot be obtained if the maximum oscillation frequency range of each pulse oscillator is instantaneous. The laser pulse output time is the pulse width), and the time when the laser oscillation delay is subtracted from the discharge width when the discharge is initiated is the reason: when the discharge is initiated, the degree of discharge X time ) Is lower than the laser oscillation threshold, resulting in no phenomenon that the laser oscillation turns on compared with the start time of the induced discharge. (Of course, this lag will vary according to the resonator components, etc.) In addition, by controlling the width of the discharge, specifically the time width of the electric power, the laser pulse can be adjusted at will (the maximum value of the pulse laser oscillator Control parameters for switching the oscillation frequency. However, due to power input, there is an upper limit on the pulse width according to the power supply load. As described above, in conventional laser processing systems, it is difficult to change the peak power, so the beam transmission rate ai Under the conditions controlled by the beam pulse width Wi, the beam pulse width Wi is the only control. Next, the type of laser irradiation will be explained. Slow, stable discharge requires (below the pulse laser) the peak power to be changed. Width W i (hereinafter referred to as the interval width (hereinafter referred to as the interval width is approximately the same. Energy (discharge power density method for laser output, the starting time will show a backward structure, and the gas is controlled by the supply and injection width, which can be below the instantaneous The range is limited by the progress. Therefore, due to the energy of the beam, the parameters are switched according to the light of the optical system, especially in an instant.

314581.ptd Page 11 200305473 V. Description of the invention (7) Laser irradiation types can be roughly divided into two types: burst processing, that is, as shown in Figure 19, beam irradiation is determined at the position of the opening. After the position, only the laser pulse is continuously irradiated to reach the irradiation number s required to form the hole; and the cycle processing, that is, as shown in FIG. 20, the number of openings is set to η, and When the number of shots is set to s, the beam irradiation position is determined at the position of the opening, and the operation of irradiating the laser pulse once after nx s is repeated. Taking burst processing as an example, the laser disk time required for the kth irradiation to the (k + 1) th irradiation in each hole is set to T 〇k (equivalent to the beam irradiation rest time during sample processing) When the pulse width of the s-th irradiation is set to # and the positioning time from the (j-1) th hole to the jth hole is set to Tg j, the processing time Tb required for the η openings can be expressed by the following formula

Tb = nx

Tok + Ws \ η • · · Equation 2 In general, Ws < < Σ Tok leads to:

Tb = η x ^ Tok +

Cut ·. · Formula of Equation 3. When the average value of gTok is set to To and the average value of Tgj is set to Tg,

The average Tb of Tb is: 77 ^ ~ τ λζ X {(S — 1) X 7 ". + 7 ^}. · · Equation 4 Therefore, the processing time is determined by the laser oscillation time T 〇 and the number of irradiations s.

314581.pid Page 12 200305473 V. Description of the invention (8) and positioning time Tg is determined. On the other hand, in the cycle processing, if the pulse width of the i-th irradiation of each hole is set to Wi, and the positioning time from the (] -1) th hole to the jth hole is set to Tg ij, then The processing time T c required for the η opening operations can be expressed by the following formula:

Generally speaking, Wi < < Tgi j leads to ...

Tc ^ t 2 Tgij ... the formula of Equation 6. When the average value of Tgi j is set to Tg,

The average value Tea of Tc can be expressed by the following formula:

Tea nx sxTg. • Equation 7 Therefore, in cycle processing, the processing time is determined by the number of irradiations s and the positioning time Tg. The difference between cycle processing and burst processing will be described here. Cyclic machining can prolong the dwell time T q c of the beam irradiation of each hole. Therefore, the periphery of the machining hole is less affected by heat and the machining quality can be improved. In contrast, during the burst processing, each hole is performed in the laser vibration time T0.

3145S1.ptd Page 13 200305473 V. Description of the invention (9) Processing, so the resting time Tqb of the beam irradiation is shorter than Tqc (Tqc > > Tqb), and the periphery of the processing hole is easily affected by heat. In addition, regarding the processing time, according to Equation 4 and Equation 7, generally speaking, under the condition of Tg > To,

Tca—Tba = nx (s—i) x (Tg—T0)> 0 .. Compared with cycle processing, when using burst processing, the processing time is shorter and the productivity is better. As mentioned above, the traditional laser processing system controls the beam diameter by the diameter of the mask, and controls the beam energy by the discharge power density and discharge width, as well as the optical system described above, and controls the beam energy by burst processing and The selection of cycle processing and the laser oscillation frequency control during burst processing control the beam dwell time to ensure processing quality and productivity. In addition, Japanese Patent Application Laid-Open No. 4-4109 1 discloses laser processing of two types of materials. The laser processing is performed by laser output having a peak power shown in FIG. 21 and processed through printing. The surface copper foil 1 4 of the wiring substrate 1 is processed to the inner surface copper foil 16. In general, since the processing of copper foil is not easy, it is necessary to increase the beam energy of the irradiation. _ On the one hand, due to the high reflectivity of copper foil to light, when a laser beam with a high peak power is irradiated for a long time, a plasma is easily generated, which causes the plasma to absorb laser energy. In addition, the copper junction has a large thermal conductivity, and has characteristics such as rapid heating and rapid cooling.

314581.ptd Page 14 200305473 V. Description of the Invention (ίο) Therefore, it is generally believed that in order to penetrate the copper foil, a method of irradiating a large amount of beam energy in a short time can be used, that is, with a high irradiation peak power and a short pulse width The method of laser beam (S 1 in Fig. 21) is more suitable. In addition, compared with the above-mentioned copper foil, the insulating resin is easier to process and can be processed with only a small amount of energy. However, because the thickness of the insulating resin used for printed substrates is generally thicker than that of copper foil, the overall resin is processed. The total energy required must increase accordingly. However, like the aforementioned copper foil, when a large amount of beam energy is irradiated in a short period of time (increasing the peak power), the insulating resin with a small thermal conductivity cannot transmit the thermal energy in the depth direction, and the thermal energy is diffused in the horizontal direction. Crust formation not only fails to achieve the desired processing depth, but also causes the phenomenon of resin residue 17 or internal expansion 19 as shown in Fig. 24. Therefore, in order to penetrate the insulating resin, it is generally considered that a method of irradiating a laser beam with a low peak power multiple times (S2 to S6 in FIG. 21) is more suitable. As described above, it is generally considered that by selecting various conditions of the laser pulses to be irradiated, it is possible to carry out the penetration processing of the surface copper foil 12a and the copper foil that reaches the inner surface of the insulating resin 11 without destroying the processing quality. 1 2b penetrating force. However, in actual processing, when the existing laser processing system is to be used, the following restrictions are usually encountered. First, in the conventional laser processing system, as described above, there is a lack of a method for greatly changing the peak power, and in particular, it cannot be changed instantaneously (in a range below the maximum oscillation frequency of the laser oscillator).

314581.ptd Page 15 200305473 V. Description of the invention (11) Second, in the traditional pulsed laser oscillator, due to factors such as power supply capacity, the oscillator that outputs a laser beam with high peak power cannot output a longer pulse width. On the contrary, an oscillator that outputs a laser beam with a longer pulse width cannot output a laser beam with a high peak power. Therefore, in the traditional laser processing system, since the laser irradiation patterns shown in Figure 22 and Figure 23 are used for processing, it is not easy to balance processing quality and productivity at the same time, and one party must be sacrificed. '' Figure 2 shows the traditional laser oscillator when using the laser oscillator 2 of Figure 15 to output a peak, value power and short pulse width (1 to 15 // s). Laser irradiation pattern and processing state. As in S 1 1 in Fig. 22, in the first irradiation, a laser beam with a high peak power and a short pulse width is used for irradiation to penetrate the surface copper foil 12a. When the insulating resin 1 a is processed, the peak power is reduced and the laser beams S 1 2 to S 1 5 are irradiated four times. In addition, during the sixth irradiation, in order to remove the residual resin, a laser beam 16 with a slightly increased honeycomb power was irradiated. Through the processing method shown in Figure 22, a certain degree of processing quality can be obtained. _ φ As described above, in order to significantly reduce the peak power after the second irradiation, the above-mentioned optical system and the like must be used, but burst processing cannot be performed because it cannot change instantaneously. Therefore, it is necessary to adopt a cycle process that causes a decrease in productivity and a process that increases the number of shots, which results in a significant reduction in productivity.

3] 4581.pul Page 16 200305473 V. Description of the invention (12) For example: the number of holes η = 1 0 0 0 0, the average positioning time T g = 0 · 0 0 1 second when the conditions are switched 1 k Η ζ), the number of shots is s = 6 and the processing time is 60 seconds, compared with the processing time when it is assumed that the same number of shots can be used for burst processing (Tο = 0 · 0 0 0 5 seconds (2kHz)) In the case of 30 seconds, its productivity reached only 1/2. Figure 23 shows that the traditional oscillator, laser oscillator 2 in Figure 15 uses a low output peak power (less than 1/4 of the oscillator in Figure 22) and a long pulse width ( For example, the laser irradiation type and processing type when the laser beam is 16 to 15 0 // s). As shown in S21 in Fig. 23, although the pulse width of the laser beam for the first irradiation is increased to increase the beam energy to penetrate the surface copper foil 1 2 a, it is the same as the first irradiation shown in Fig. 22 In comparison, because the bee value power is less than 1/4, it is difficult to penetrate through the case without inputting the beam energy greater than the first irradiation energy shown in FIG. 22 according to the above reasons. However, if the pulse width needs to be longer than necessary to increase the beam energy, the plasma will absorb the beam and the energy will not be transmitted to the copper foil. Therefore, in order to penetrate the surface copper foil 12a, a high-energy laser beam must be used for several irradiations (in this example, the surface copper foil 12a is penetrated during the second irradiation). The third irradiation was a laser pulse S 2 3 with a low peak power and a long pulse width, which penetrated the insulating resin 1 1 a to the inner copper foil 1 2 b. In the fourth irradiation, compared with the third irradiation, a laser pulse S 2 4 with a higher peak power and a shorter pulse width was used to remove residual resin. In the above manner, although the copper foil 1 2 a and the insulation tree can be processed through the surface

31458] .ptd Page 17 200305473 V. Description of the invention (13) Grease 1 1 a, but because too much energy is applied to the copper foil, compared with the example shown in Figure 2 2, its processing quality is more likely to deteriorate. In addition, as described in FIG. 22, since the peak power cannot be changed instantaneously, only the cycle processing can be performed and the burst processing cannot be performed. As described above, when processing a multi-layer printed wiring board made of materials with completely different materials, it is difficult to take into account both the improvement of processing quality and the output if a conventional laser processing system is used. In addition, because there are many types of printed wiring boards, and each processing content is different due to resin processing, copper foil, resin grease mixed processing, etc., it is difficult to perform all processing with a single # laser processing system, and at the same time, It must also consume huge investment equipment. [Summary of the Invention] The object of the present invention is to solve the above-mentioned problems, and provide a laser processing system that can not only reduce the yield but improve the processing quality for printed wiring boards of various materials, and laser processing using the device. method. To achieve the above object, according to a first aspect, the present invention includes a pulsed laser oscillator that changes a discharge power input between electrodes by changing a discharge command pulse composed of a predetermined frequency to change a laser beam characteristic; The laser beam output by the laser oscillator is guided to an optical system of a workpiece. In addition, the optical system includes a switching device for switching a laser beam output from the laser oscillator to a filter member that can pass through and can change a peak power of the laser beam, And the beam

3] 4581.ptd Page 18 200305473 V. Description of the invention (14) Appropriate path of filter members with different transmittances. In addition, a laser oscillator "equipped with an induced discharge between the electrodes" to cover the laser beam and output a laser beam; and a switch device capable of guiding the laser beam to the object to be processed, and the switch The device is to switch the laser beam output from the laser oscillator to a filter member that can change the peak power of the laser beam to a variable one that should pass, and a filter with a different beam transmittance. Appropriate path for the optical component. In addition, by switching the switching device on and off, it is possible to control the pulse width of the laser beam that is pulsed while switching to a path that should pass through the filter member. In addition, the laser processing method of the present invention belongs to a type of laser which changes a discharge power input between electrodes by switching a discharge command pulse composed of a predetermined frequency, and uses a laser which can change a laser beam characteristic. The laser processing method for processing the laser beam output from the oscillator can be switched instantly in each pulse in accordance with the material and thickness of the workpiece within the range below the maximum oscillation frequency of the laser oscillator. There are three conditions, such as the peak power and pulse width of the laser pulse, and the resting time of the beam. In addition, when the conductor layer is removed, it is processed by the first pulse with a short pulse width of 1 to 15 μs, which is close to the maximum peak power output of the laser oscillator, and when the insulation layer is removed, the The second pulse having a peak power output of approximately 1/2 to 1/10 of the first pulse and a pulse width of a long pulse width of 16 to 200 // s is processed. In addition, by switching the discharge command pulse, the laser in one pulse

3] 4581.pid Page 19 200305473 V. Description of the invention (15) During the output period, the peak power is set to be variable, and the laser beam output by the pulse is used for processing. In addition, the first area having a slightly maximum peak power of the laser oscillator and a short time of 1 to 15 " s, and a peak power of approximately 1/2 to 1/10 of the first area described above and 1 to 2 0 0 " s for a long period of 2 pulses of laser output for processing. < [Embodiment] j The first embodiment type • Figures 1 and 2 are about the first embodiment. The first figure is a schematic diagram for explaining the first laser processing system, and the second figure is for A schematic diagram of a device for controlling the laser irradiation form of the present invention will be described. In Fig. 1, 6a and 8a show the laser beam and laser irradiation form output by the laser oscillator 2A, and 7a and 9a show the laser beam and laser irradiation form formed by the optical system 3. , Other parts that are the same as those in FIG. 15 are marked with the same symbols and their explanations are omitted. In Figure 2, 4 1 a and 4 1 b are discharge command pulse groups, 4 2 a and 4 2 b are discharge power pulse groups, 4 3 a and 4 3 b are discharge energy, and 4 4 a and 4 4 b are Output laser beam energy. -In addition, fh, f 1 are the AC power frequency, I u, I d are the effective discharge power. Density, Nu, Nd are the average discharge power density, Ds, D1 are the discharge width, Pu, P d are the peak power, W s and W 1 are the pulse widths, and L s and L 1 show the laser cover delay. As explained in the prior art, in a gas laser oscillator of a carbon dioxide gas laser oscillator, when the resonator loss is maintained to a certain degree,

314581.pid Page 20 200305473 V. Description of the invention (16) Control the discharge power density and discharge width to change the peak power and pulse width of the laser beam output from the oscillator. Since the discharge power density is proportional to the input power, in the prior art, the discharge power density was changed by changing the voltage applied between the electrodes. This implementation mode is concerned with a laser oscillator focusing on: the input power is divided into instantaneous power and average power of average time, and the peak power of the laser beam is controlled by the average power of average time After setting the voltage to be constant (setting the effective discharge power density to be constant) and controlling the number of discharge power pulses per unit time to control the average discharge power density, the peak power of the laser beam is changed. . In other words, the three conditions of the peak power, the pulse width, and the resting time of the laser pulse to be irradiated are switched instantaneously at each pulse in accordance with the material, material composition, and processing thickness of the processed portion of the printed wiring board. Here, because the prior art keeps the number of discharge power pulses constant, the effective discharge power density and the average discharge power density form a one-to-one relationship. Therefore, the effective discharge power density is changed according to the voltage change to control the average discharge power density. . The operation will be described below with reference to FIG. 2. First, when a discharge command pulse is applied at a time interval of 1 / fp, a discharge power pulse (frequency fp) is inputted between the electrodes by an AC power source in synchronization therewith. The south of the discharge power pulse is the instantaneous continuous discharge power density I,

314581.ptd Page 21 200305473 V. Description of the invention (17) The average time is the average discharge power density N. When the voltage applied between the electrodes is set to a constant value, the effective discharge power density also becomes constant. The more the number of discharge power pulses m per early bit time, the higher the average discharge power density and the peak power p of the laser beam. Then came South. For example, when a discharge command pulse is given at a short time interval (1 / fh), the discharge power pulse (increasing the number of discharge power pulses input per unit time) is synchronized with the current input from the parent power source and the frequency fh, and The average discharge power and the density Nu are increased to output a laser beam with a high peak power Pu. Conversely, when the discharge command pulse is applied at a long interval (1 / f 1), the discharge pen force pulse (the number of discharge power pulses input per early bit time decreases) is synchronized with it by the AC power at a low frequency f 1 is turned on and the average discharge power density Nd is lowered to output a laser beam with a low peak power Pd. In addition, as described above, the pulse width of the laser beam can be changed by changing the time when the electric power is input into the electrode. The power input time width D can be expressed by the following formula: D = (1 / fp) xm Equation 9 Therefore, by controlling the discharge command pulse interval 1 / fp and the discharge power pulse, the number of pulses m, an arbitrary pulse can be obtained width. φ As described above, in this embodiment, the peak power of the laser beam is controlled by adjusting the frequency of the AC power supply, and the pulse width of the laser beam is controlled by changing the time of inputting power to obtain an arbitrary laser pulse. Specifically, an arbitrary laser pulse can be obtained by controlling the time interval of the discharge command pulse and the number of discharge command pulses.

314581.ptd Page 22 200305473 V. Description of the invention (18) In addition, according to the present invention, by setting a shorter pulse width when the peak power is higher, and setting a lower peak power when the pulse width is longer, Within a certain power supply load range, it has the effect of expanding the pulse waveform selection range. With the above control, the peak power and pulse width of each laser pulse can be arbitrarily changed, and an arbitrary laser irradiation form 8a can be obtained. The optical system 3 is used to form the obtained laser irradiation form 8a into a light beam, which is used as a laser. The radiation pattern 9 a is transferred to the printed wiring board 1 as a processing object for processing. The following describes the burst processing method # using the above laser processing system. For example, the processing of the printed substrate is the same as that in Figure 21, that is, it is composed of the first layer of copper foil 1 2 a, the second layer of insulating resin 1 1 a, and the third layer of inner copper foil 1 2 b When the printed circuit board is processed. Fig. 3 is a schematic diagram showing the irradiation form of the laser beam, and Fig. 4 is a schematic diagram showing the processing state at this time. In Fig. 3, S 3 1 to S 3 3 are the laser beams of the first to third irradiation of each hole, and each area shows the beam energy. In addition, P is the peak power, W is the pulse width, To is the laser oscillation time, and Tg is the positioning time. In Figure 4, 1 2 a is the surface copper collar, 1 1 a is the insulating resin, 1 2 b is the inner copper foil, 20 is the planned processing position, 1 4 a is the blind hole after processing, S 3 1 to S3 3 is the laser pulse waveform of the first to third irradiations, and al to a 3 are the processed parts processed by the irradiation laser beams of the first to third irradiations, respectively.

Bill

314583.ptd Page 23 200305473 V. Description of the invention (19) In this embodiment, the laser irradiation mode shown in Fig. 3 is used, and the material or composition of the printed wiring board, the processing thickness, etc. are applied to each pulse The conditions of the peak power of the laser beam, the pulse width, and the resting time of the beam irradiation are switched instantaneously in the middle, and the burst processing method is used at the same time to achieve the purpose of shortening the processing time. On the premise of the relationship between the material and the laser beam described in the prior art, the laser processing method of this embodiment mode will be described with reference to Figs. 3 and 4. J First, the laser beam S3 1 irradiated for the first time is used as the laser pulse of the first layer of copper and foil 1 2 a. In order to meet the conditions for removing the copper foil, the copper in the first layer is passed through in a stable manner. Foil, and laser pulses with high peak power (approximately 1 to 3kw) and shorter pulse widths (approximately 1 to 15 / s). Next, the laser beam S 3 2 irradiated for the second time is used as a laser pulse for processing the second layer of insulating resin 1 1 a. In order to meet the conditions of removing the insulating resin and achieve the purpose of improving productivity, the peak power is irradiated. Laser pulses that are low (about 0.5 to 0.5 kw) and have a long pulse width (about 80 to 2 0 // s). This laser pulse is different from Figure 21. The laser pulse for the first irradiation is a laser pulse with a low peak power of less than 1/6 and a long pulse width of 5 times or more. In the figure 21, in order to penetrate the insulating resin, a plurality of # 二 # ^ laser beams must be irradiated, but according to the present invention, only the first irradiation is required. That is, by reducing the peak power extremely, suppressing the energy from spreading in the diameter direction, and increasing the pulse width so that the energy can be injected into the depth direction, it is possible to penetrate the insulating resin in one shot while maintaining the processing aperture. As a result, the number of irradiations can be reduced while ensuring the processing quality.

314581.ptd Page 24 200305473 V. Description of the invention (20) It saves the rest time of irradiation of excess light beams and improves productivity. Next, the laser beam S 3 3 irradiated for the third time is used as a laser pulse for processing the insulating resin 1 1 a that was not removed by the laser beam S 3 2 during the second irradiation. It will cause damage to the inner layer copper foil, so the lower irradiation energy E 3 is better. In addition, in order to suppress the residual amount of resin, the peak power is better than the peak power of the second irradiation, so the irradiation is slightly higher than the first. Laser pulse with 2 peaks of power (approximately 0 · 1 to 1 kw) and a shorter pulse width (approximately 1 to 3 0 // s). As described above, in the present embodiment, when the printed wiring board is used, a laser beam irradiated three times can ensure good processing quality and reduce the number of irradiations. To sum up, according to this embodiment, in accordance with the material and composition of the printed wiring board, the peak power and pulse width of the laser beam are within each pulse within the range lower than the oscillation frequency of the pulse laser oscillator. It can be optimized and the power of the peak value can be changed instantaneously. For example, by implementing the laser irradiation pattern of FIG. 3 by using burst processing, the effect of simultaneously improving processing quality and productivity can be obtained. For example: the number of holes n = 1 0 0 0 0, the average positioning time of the time required to switch the matching conditions T 〇 = 0 · 0 0 0 5 seconds (2 k Η z), the number of irradiation 3, the processing time is 1 Compared with the cycle processing of the laser irradiation pattern in Fig. 20, it is shortened by 5 5 seconds. This method is particularly effective when a high-density method is used to perform hole-cutting processing on a printed wiring board that is multilayered with different materials. In addition, although the above description is about blind hole processing, the same is true.

3] 45Sl.ptd Page 25, 200305473 V. Description of the invention (21) When applying this method to the processing of through-holes, it can be matched with the material or material composition of the printed wiring board 'below the pulse laser vibration surplus Within the range of the oscillator's vibration frequency, the peak power of the laser beam, the pulse width, and the resting time of the beam irradiation are optimized in each pulse, thereby achieving the effect of improving the processing quality and productivity. In addition, although the above description is for burst processing, of course, it can also be applied to cyclic processing. Compared with burst processing, the productivity of cyclic processing is low, but it can obtain a more stable and good processing quality effect. In addition, it can also be applied to processing methods that use both burst processing and cyclic processing. That is, in addition to focusing on the resting time of beam irradiation, the material and material composition of the printed wiring board are used to combine the peak power and pulse width of the laser pulse. In addition to optimization, in the method of drastically changing the resting time of the beam irradiation, the use of burst processing and spin ring processing can not only achieve stable and good processing quality, but also achieve the effect of improving productivity. In addition, by using the laser processing system of the printed wiring board of the present invention, a single laser processing system can be used to perform processing of a variety of printed wiring boards. The second implementation mode φ In the first implementation mode described above, A case where the peak power and the pulse width of the laser beam are changed by changing the average discharge power density and the discharge width will be described, but the beam transmission rate of the optical system may also be changed. Therefore, in this embodiment mode, the beam transmittance of the optical system is focused on.

314581.pid Page 26 200305473 V. Description of the invention (22) Figure 5, Figure 6, Figure 7, Figure 8 are diagrams related to the second embodiment, and Figure 5 is a description of the thunder of the present invention. Fig. 6 is a schematic diagram of a laser processing system. Fig. 6 is a schematic diagram illustrating a device for controlling a laser irradiation mode. Fig. 7 is a schematic diagram of an example of an objective lens used as a device for controlling a laser irradiation mode. Motion picture of objective lens. In Fig. 6, 4 5 a and 4 5 b are the laser beam energy after forming by the optical system. In FIGS. 7 and 8, 3 3 is an objective lens of a control device that can change the laser beam transmission rate at any time, and 34 is an optical high-speed for appropriately changing the path of the laser beam 6 b incident on the objective lens 3 3. Switching element, 3 5 is a translucent reflecting mirror (beam transmittance) that can vary the peak laser power of incident laser light, and each is a semitransparent reflecting mirror, 3 6 is used to absorb the reflection from the semitransparent reflecting mirror 3 5 Laser light damper. In addition, for convenience of explanation, 3 7 a, 3 7 b, and 3 7 c are used to describe laser light whose path is changed by using the switching elements 3 4 a and 3 4 b. The changes in the peak power and pulse width of the laser beam output from the optical system of this embodiment to the processing point will be described below. First, the operation of changing the peak laser power and pulse width when changing the beam transmission rate will be described with reference to FIG. 6. Assuming that the beam transmission rate of the optical system is fixed at 100% (usually less than 50%, but it is set to 100% for simplicity), the laser beam output by the laser oscillator is connected. Send to the processing point with the same peak power and pulse width. Here, when passing through an objective lens with a certain beam transmission rate, the laser vibration

31458] .ptd Page 27 200305473 V. Explanation of the invention The absorption and loss of the oscillator, the output of the mirror will produce a variable laser beam, which will be changed from Pu to the beam 45a < The specific objective rate of the peak power output from the largest device that is oscillating is different from the objective lens. In addition, if it is fixed, it will be feared, and A23 in the laser beam emitted by (23) is a transmitted object. Pound, υ C% reflects the objective lens (A + B + c = 100%). The B% of the company is that the laser beam of the objective lens is the laser beam of A%. For example, Figure 6 shows the output laser vibration ^. . During the period of peak power 44a, when the transmission rate of the light beam is reduced, it is converted into Pm (< Pu), and the pulse width is obtained. The peak power can be obtained, which is in the Ws laser oscillator. When the transmission rate of the laser beam 44b in turn is reduced to 0% instantaneously, the laser beam width can be changed from w! To Wm (< W1). By controlling the light i, an arbitrary peak power and pulse width output can be obtained. 2. ', the laser beam output by the optical device is _ # 二 仁 In order to convert the peak power and the longest pulse ί; :: The laser pulse of the laser pulse *, but cannot be used :: f fought by the laser Rate or pulse width. ] The method of changing the pre-system to the above-mentioned optical beam transmission rate and pulse width of the above optical:!,: 'Can be explained by using the Humulus mirror 33 shown in FIG. 8. ^ Transferred laser beam transmission 33 is composed of: optical high-speed switching element 34 & transmission transmittance = reflectors 35a, 35b and damper 36. : It is known that the peak power and pulse width of the laser beam dies in the objective lens 33 == Ming, and it is assumed that the high-capacity switching element is shifted in the starting (ON) state.

200305473 V. Description of the invention (24) First, when the switching element 34a is on (ON), the laser beam 6b directly forms the laser beam 3 7a and is transmitted to the switching element 3 4c. If the switching element 34c is turned OFF at this time, the laser beam 37a is directly transmitted to the next switching element 3 4 d. When the switching element 34d is switched from OFF to 0N instantaneously during beam transmission, the laser beam during the OFF period will form 7b, while the laser beam during the ON period will be deflected and irradiated to the damper 36. When the OFF time is short, a laser pulse 7 b 1 with a high peak power and a short pulse width can be obtained as a result. Next, when the switching element 34a is turned off and the switching element 34b is turned on (ON), the laser beam 6b will be deflected by the switching element 34b through the switching element 34a and transmitted to the translucent mirror 35a. Assuming that the transmissivity of the translucent mirror 3 5 a is, for example, 50%, the laser beam 3 7 b will correspond to the peak power 7 b to form a half-length laser beam with the same pulse width. The laser beam 37b is transmitted to the switching element 34c, and is deflected when 34c is turned on (ON), and is transmitted to the switching element 3 4 d. The switching element 34d performs the same operation as described above. As a result, a pulse 7 b 2 is obtained. Next, when the switching elements 34 a and 3 4 b are turned OFF, the laser beam 6 b passes through the switching element 3 4 a, 3 4 b, and transmitted to the translucent mirror 35b. Assuming that the transmissivity of the translucent mirror 3 5 b is, for example, 25%, the laser beam 3 7 c will correspond to the peak power 6 b, forming laser light with a pulse width of 1/4 and the same pulse width.

314581.ptd Page 29 200305473 V. Description of the invention (25) bundle. After that, the laser beam 3 7 c is transmitted to the switching element 3 4 d. The switching element 3 4 d performs an operation opposite to that described above. That is, the laser beam during the ON (ON) period of the switching element 3 4d is deflected, and the laser beam during the OFF (OFF) period passes through and irradiates the damper 36. When the time of 0N is long, the laser pulse 7 b 3 with low peak power and long pulse width can be obtained as a result. In addition, the above description describes the method of controlling three kinds of peak power, but it is also possible to control two or more kinds of peak power by the same method to obtain a laser pulse having an arbitrary peak power and pulse width. In this embodiment, the objective lens is inserted into the optical system, and the laser beam output from the laser oscillator is converted into a laser having an arbitrary peak power and pulse width by switching ON / OFF of the light at high speed. pulse. By mounting the above-mentioned optical system in the laser processing system shown in FIG. 5, the same effect as that shown in the first embodiment can be obtained, that is, by matching the material and material composition of the printed wiring board, By optimizing the peak power and pulse width of the laser beam and the resting time of the beam irradiation in each pulse, the effect of improving processing quality and productivity can be obtained. In addition, the above-mentioned optical system can be combined with the laser oscillator described in the first embodiment to form a laser processing system (Figure 9). With this, the changes in the peak power and pulse width of the laser beam can be made more detailed, and the changes can be made larger. Therefore, by using the above-mentioned laser processing system, it is possible to further expand the selection range by matching the materials and materials of the printed wiring board, so that the laser beam peaks.

314581.ptd Page 30, 200305473 V. Description of the invention (26) The value of power and pulse width, the beam energy is optimized in each pulse, and the effect of improving processing quality and productivity can be achieved even in the face of complex material composition 〇 The third embodiment describes the field processing system composed of one laser oscillator in the first and second embodiments described above. However, this embodiment provides a type of A field processing system consisting of at least two laser oscillators with peak power and pulse visibility. Figure 10 shows the structure of the laser processing system of the present invention. 2C and 2D in the figure are The laser oscillators 3C and 3D with different laser oscillation outputs are optical systems, and 6c, 8c, 6d, and 8d are the laser beams and laser as shapes from the laser oscillators 2C and 2D, respectively. States 7c and 7d are the laser beams formed by the optical systems 3C and 3D. Next, the operation of Fig. 10 will be described in Fig. 0. The laser oscillator 2C, for example, has the highest peak power of T7, which is high. The short field pulse 6 c is through the copper foil and the laser oscillator 2D, for example, the laser pulse 7d with the best power and low pulse power and long pulse swing is used to penetrate the insulating resin ο laser pulse 8c And 8d are transported and irradiated to the printed wiring board by the optical system 3C, 3D, respectively. At this time, the laser beam 7 c is irradiated to the copper foil on the printed wiring board 1 and the laser beam 7 d. Controlled by irradiation with insulating resin 0, that is, 5 when the printed wiring board of FIG. 21 is used, 5 is irradiated with laser beam 7 c in the first irradiation, and laser beam 7 d is irradiated in the second irradiation, and

314581.ptd Page 31 200305473 V. Description of the invention (27) In the third irradiation, the peak power of the laser beam output by the laser oscillator 2 C is reduced and irradiated. With this kind of control, the 1 The same implementation type can achieve the effect of improving the processing quality. The fourth embodiment. Figures 11 and 12 are related to the fourth embodiment. Figure 11 is a schematic diagram illustrating the laser processing system of the present invention, and Figure 12 is a diagram illustrating control. The schematic diagram of the device of the laser pulse waveform of the present invention. • In Figure 11, 4 6 a to e are discharge command pulse groups, 4 7 a to e are discharge, electric power pulse groups, 4 8 a to e are input discharge energy, and 4 9 a to e are outputs. Laser beam energy. The basic idea of this embodiment mode is to focus on: as described in the first embodiment mode, when the resonator loss is kept constant, the laser beam 6e output by the laser oscillator 2E in FIG. 11 is It is determined by the average discharge power density and discharge width, but it is also suitable for laser oscillation. That is, in the outline operation, an arbitrary laser irradiation pattern 8e can be obtained by controlling the laser pulse waveform shown in Fig. 12. The operation of Fig. 12 will be described below. In addition, the mode shown in Fig. 12 is applicable to the basic concept of the above-mentioned first implementation mode, that is, to maintain the resonator loss constant, and to average the loss by # 春 电 Power density and discharge width to control the peak power and pulse width. In addition, as in the first embodiment, a specific control method is a method in which the frequency of the AC power source is adjusted to change the average discharge power density, and the input power time is changed to change the discharge width. First, the discharge command pulse is supplied at a high frequency of 4 6 a.

31458] .pid page 32 200305473 V. Description of invention (28) The number of discharge power pulses input during (28) will increase, and 48a with high average discharge power density can be obtained. For this discharge energy 4 8 a (N lx T 1) after the laser oscillation delay L 1, a beam energy 4 9 a (P lx W 1) having a high peak power is output. Then, without a time difference (beam irradiation rest time), the discharge command pulse 4 6 b with a slightly reduced frequency is continuously supplied, and then a discharge power pulse 4 7 b is input to obtain a discharge energy 4 8 b (N 2x T 2) , And then, without generating the laser oscillation delay, connect the previous 49a and output the beam energy 49b (P2x W2). In the same manner, the discharge instruction pulses ί 4 6 c, 4 6 d, and 4 6 e are continuously supplied without time difference, and the discharge energy 4 7 c (Ν 3χ Τ 3), 47d (N4x Τ4) are obtained for this. ), 47e (N5x T5), and connect to the previous 49b, and output beam energy 49c (P3x W3), 49d (P4x W4), 49e (P5x W5). As a result, it is possible to obtain a laser pulse waveform with a mixture of five arbitrary peak powers. In addition, as in the second embodiment, the obtained laser irradiation pattern 8 e is converted into a light beam by the optical system 3E, or an appropriate one is used. The optical system changes the laser beam waveform so that the laser irradiation pattern 9 e is formed. That is, the above-mentioned laser pulse waveforms with a plurality of peak powers are obtained by controlling the switching of the objective lens for controlling the laser beam waveform described in the second embodiment during the oscillation. As described above, by applying the same concept as that of the first and second embodiments to laser oscillation, a laser pulse waveform with a mixture of multiple peak powers can be obtained. However, compared with the first and second implementation modes, the lack of high-speed and stable control

3] 4581.ptd Page 33 200305473 V. Description of the invention (29) The situation that will cause unevenness of each pulse may increase. Next, a processing method using the laser processing system will be described. The processing method of this embodiment mode is applicable to the case where a more detailed laser pulse waveform condition is set in the processing method of the first embodiment mode. Fig. 13 is a schematic diagram of a laser beam irradiation pattern when the laser processing system of the present invention is applied to burst processing. In FIG. 13, the beam energy E i of the laser beam irradiated for the first time is assumed to be the v-th peak power stored in the u-type peak powers of the i-th irradiation as, P iv, and P When the time width held by iv is assumed to be W iv, the following formula can be obtained

Ei = ^ (Piv x Wiv) · ·. Formula 1 Ο ν = > 1 • · Here, both P iv and Wi i of the present invention can be switched instantaneously (less than 1/2 of the laser pulse width). The control parameters are based on the processing method using the above method to switch. In Fig. 13, S4 and S42 are respectively the laser beams of PI lx W1 1 and P21x W21 in the first irradiation: and S43 are the laser beams of P21 w XW 21 in the second irradiation . Lu explained the action. The irradiation light beams S 4 1 to S 4 3 are applicable to the respective irradiation light beams S3 1 to S3 3 shown in the first embodiment. That is, S41 is high peak power and short time width, S4 2 is low peak power and long time width, while S 4 3 is a peak power slightly higher than S 4 2 and pulse width

31458] .ptd page 34 200305473 V. Description of the invention (30) Short laser beam. By using different laser beams, it is possible to obtain substantially the same processing results as the processing method described in the first embodiment. That is, the surface copper junction 12a is penetrated through S41, the insulating resin 1 1a is penetrated through S42, and the resin residue is removed by S4 3 without damaging the inner copper foil 1 2b. In addition, since S 4 1 a and S 4 2 are the same laser pulses, the number of irradiations required per well can be reduced from 3 to 2 times. Therefore, it has the effect of reducing the resting time of beam irradiation, and it is possible to shorten the processing time required for n openings compared to the first embodiment. For example: In the example of the first embodiment, the processing time is 10 seconds. Compared to the burst processing of the first embodiment, it is estimated that the processing time can be shortened by 5 seconds and the productivity can be increased by 1.5 times. As described above, by using a laser processing system that controls the laser pulse waveform, the processing quality can be improved, and the productivity can be improved by reducing the number of irradiations (reducing the laser irradiation rest time). In addition, there are two effects of obtaining processing quality and productivity that cannot be achieved with traditional laser processing systems. Industrial Applicability As described above, the laser processing apparatus of the present invention is suitable for performing hole processing on a workpiece such as a printed circuit board.

314581.ptd Page 35 200305473 Brief description of the drawings [Simplified description of the drawings] The first diagram is a model diagram for explaining the laser processing system of the first embodiment. Fig. 2 is a schematic diagram showing a device for controlling a laser irradiation form in the laser processing system of the first embodiment. Fig. 3 is a schematic diagram showing a laser irradiation pattern used in the laser processing method of the laser processing system of the first embodiment. ‘Figure 4 is a schematic diagram of the laser processing state and state of the laser irradiation pattern shown in Figure 3. Fig. 5 is a schematic diagram for explaining the laser processing system of the second embodiment. FIG. 6 is a state diagram showing a change in a beam transmission rate of an objective lens. FIG. 7 is a configuration diagram showing the configuration of the objective lens. Fig. 8 is a state diagram showing changes in the beam transmittance and pulse width of the objective lens. Fig. 9 is a schematic diagram for explaining the laser processing system of the second embodiment. Fig. 10 is a model diagram for explaining the laser processing system of the third embodiment. Φ Figure 11 is a model diagram for explaining the laser processing system of the fourth embodiment. Fig. 12 is a schematic diagram showing a device for controlling a laser irradiation form in a laser processing system of a fourth embodiment. Figure 13 shows the laser processing system of the fourth embodiment applied to bursts.

314581.ptd Page 36 200305473 Brief description of the pattern A schematic diagram showing the laser beam irradiation pattern during processing. Fig. 14 is a schematic diagram for explaining a hole-cutting process of a general printed wiring board. Fig. 15 is a schematic diagram for explaining a conventional laser processing system for punching a printed wiring board. Fig. 16 is a cross-sectional view of a brush wiring board for explaining the processing quality of laser-drilled holes. Fig. 17 is a configuration diagram showing the configuration of an objective lens composed of a mask and a collimator lens. Figure 18 is a diagram illustrating the structure of a carbon dioxide laser oscillator. Fig. 19 is a diagram illustrating a laser irradiation form of a burst processing of a conventional laser processing method for a hole in a printed wiring board. FIG. 20 is a laser irradiation pattern used to explain the cyclic processing of a conventional laser processing method for a printed wiring board. Fig. 21 is a schematic diagram showing a conventional laser irradiation pattern and a sectional view of a printed wiring board. Fig. 22 is a schematic diagram showing a conventional laser irradiation pattern and a sectional view of a printed wiring board. Fig. 23 is a schematic diagram showing a conventional laser irradiation pattern and a sectional view of a printed wiring board. Fig. 24 is a sectional view showing a printed wiring board of conventional processing quality. 1 printed wiring board

3145S1.ptd Page 37 200305473 Schematic description of 2, 2C, 2D, 2E laser oscillator 3, 3 C, 3 D, 3 E optical system 4 Likou station 5 control device 6, 6a, 6c, 6d, 6e, Ί, 7a, 7c, 7d, 8c, 8d, 9, 9a, S31 to S33, 44a, 44b Field beam 8 > 8 a, 8 e, 9, 9 a 9 e, '1.0 Laser BS ί Shooting form 1 la Insulating resin 12a, 12b, 13 Surface copper foil Inside copper drop a Blind hole 20 Machining scheduled position 33 Objective lens 34a, 34b, 34c% 34d Switch element 3 5a, 35b Translucent mirror 36 Damper 37a, 37b, 37c Laser beams 41a, 41b, 4 6 a to e Discharge command pulse group 42a, 42b, 4 7 a to e Discharge power pulse group 4 3a, 43b, 4 8 a to e Discharge energy_a, 44b, 4 9 a to e Field beam energy 4 5a, 45b Laser beams a 1 to a 3 Machined parts fh, f 1 AC power frequency I u, Id real effect discharge electric power density

3] 458] .ptd p. 38 200305473

The diagram briefly illustrates Nu, Na • average discharge power density D s, D7 discharge visibility P, Pu, Pd ΐφ-value power Wi, Ws, W1 pulse visibility Ls, LI laser oscillation delay time Tg positioning time To field shooting Vibration time 3] 458l.pid Page 39

Claims (1)

200305473 6. Scope of patent application 1. A laser processing system comprising: by switching a discharge command pulse composed of a predetermined frequency to change the discharge power input between the electrodes and making the laser beam characteristics variable Pulse laser oscillator: The laser beam output from the laser oscillator is guided to the optical system of the workpiece. 2. For example, the laser processing system of the first patent application scope, wherein the optical system has a switching device: the laser beam output through the laser oscillator can be switched to the peak power of the laser beam Instead, the appropriate filter path through which the variable filter member should pass, and the φ filter member with different beam transmittance. 3. —A laser processing system, which includes: a laser oscillator that generates a spark discharge between the electrodes and oscillates a laser beam; and has a switching device, which can output the above through the laser oscillator The laser beam is switched to guide the laser beam by changing the peak power of the laser beam to a variable filter member that should pass through and the appropriate path of the filter member with different beam transmittance. To the optical system of the workpiece. 4. If the laser processing system of the second or third item of the scope of the patent application is applied, the opening and closing of the switching device is used to switch the path that should pass through the filter member, and control the pulse that is oscillated. The pulse width of the beam. 5. —A laser processing method is to change the discharge power input between the electrodes by switching the discharge command pulse composed of a predetermined frequency, and use a laser oscillator which can change the characteristics of the laser beam. lose 314581.pid Page 40 200305473 6. Laser processing method for processing laser beams out of the scope of patent application, which is characterized in that it can match the material of the workpiece within the range below the maximum oscillation frequency of the laser oscillator. , Processing thickness, etc., in each pulse instantaneously switch the three conditions of the peak power and pulse width of the laser pulses to be irradiated, and the rest time of the beam irradiation. 6. The laser processing method according to item 5 of the scope of patent application, wherein, when the conductor layer is removed, the output is close to the maximum peak power output of the laser oscillator and a short pulse width of 1 to 15 / s The first pulse is processed, and when the insulation layer is removed, it has a peak power output of about 1/2 to 1/10 of the first pulse and a long pulse width of 16 to 2 0 // s. The second pulse is processed. 7. The laser processing method according to item 5 of the scope of patent application, wherein, by switching the discharge command pulse, the bee value power is set to a variable peak value power during the laser output period of one pulse, and The laser beam output by the pulse is used for processing. 8. The laser processing method according to item 7 of the scope of patent application, wherein it is the first field having: a slightly maximum peak power of the laser oscillator and a short time of 1 to 15 // s; and the first field In the field, the peak power of 1/2 to 1/10 and the laser output of 1 pulse in the second field for a long period of 16 to 2 0 // s are processed. 314581.pid page 4]