JP3487404B2 - Semiconductor laser pumped Q-switched solid-state laser device - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a semiconductor laser pumped Q-switched oscillating solid-state laser apparatus used in the laser processing of cutting or hole opens only. In particular, a solid by the excitation light from the semiconductor laser such as a laser diode outputs Semiconductor laser pumped Q including a laser oscillator that pumps a laser medium and causes Q switch oscillation by a Q switch to output a laser
The present invention relates to a switch oscillation solid-state laser device.

[0002]

2. Description of the Related Art A Q-switch oscillation solid-state laser device for oscillating a Q-switch by a Q-switch to output a laser is disclosed in JP-A-56-169347 and 8-31655.
No. 8 and Japanese Patent Application Laid-Open No. 8-191168, and in a Q-switch oscillation solid-state laser device, a semiconductor laser pumped Q-switch that pumps a solid-state laser medium by pumping light output from a semiconductor laser such as a laser diode. Oscillation solid-state laser devices are disclosed in Japanese Patent Laid-Open No. 2-260479 and Japanese Utility Model Publication No. 7-44039.

The Q-switch oscillation solid-state laser device disclosed in Japanese Unexamined Patent Publication No. 56-169347 performs Q-switch oscillation at a frequency higher than the pulse operating frequency of an excitation lamp that outputs pulsed light, and has a large peak output value. I am trying to get the laser output.

The semiconductor laser pumped Q-switch oscillation solid-state laser device disclosed in Japanese Utility Model Publication No. 7-44039 is
When the Q-switch oscillation is stopped, the solid-state laser material is excited below the oscillation threshold of the solid-state laser, and the diode laser excitation light intensity is increased to above the solid-state laser oscillation threshold immediately before the Q-switch oscillation is performed. A uniform Q-switch pulse train can be obtained.

Further, the laser oscillator disclosed in Japanese Patent Application Laid-Open No. 2-260479 advances the population inversion of the laser medium in the process of increasing the pumping light intensity at a predetermined increase rate, and the pumping light intensity is increased. Detects the laser light output exceeding the threshold value, and stops the operation of the Q switch by detecting the laser output to generate a giant pulse.

[0006]

Problems to be Solved by the Invention JP-A-56-1693
The Q-switch oscillation solid-state laser device shown in Japanese Patent Publication No. 47 is lamp-pumped, and even if a laser output with a large peak output value is obtained, a laser output with a uniform peak output value is obtained in Q-switch oscillation. Therefore, high precision and high quality laser processing cannot be performed.

The semiconductor laser pumped Q-switch oscillation solid-state laser device disclosed in Japanese Utility Model Publication No. 7-44039 is as follows.
Since the laser diode is energized continuously, there is a limit to the current value that can be passed through the laser diode due to thermal problems caused by self-heating of the laser diode, so a high laser diode excitation output cannot be obtained and efficient laser processing is possible. Can't do.

In the laser oscillator disclosed in Japanese Patent Laid-Open No. 2-260479, the beats of the pulse outputs of the laser light are overlapped due to competition between the longitudinal modes caused by oscillation in a plurality of longitudinal modes. A pulse waveform is formed, and this beat is different for each pulse. Therefore, there is a drawback that the intensity of each pulse changes and it is difficult to stabilize the intensity of output light. Therefore, even if the nonlinear optical element is inserted in the resonator, it is difficult to generate a stable second high frequency, and in order to eliminate the instability of the output intensity due to mode competition, a single longitudinal mode is used. It must be single wavelength light.

The present invention has been made in order to solve the above-mentioned problems, and it is possible to obtain a high peak Q-switch oscillation output due to a high peak pumping light with high oscillation efficiency and to make the peak values uniform. It is possible to obtain high Q-switch oscillation output and efficiently perform high-precision, high-quality laser processing. Also, it is possible to save power by oscillating only during laser processing, and the laser oscillator oscillates Q-switch. It is an object of the present invention to obtain a semiconductor laser pumped Q-switch oscillation solid-state laser device capable of preventing a plurality of longitudinal mode oscillations that sometimes occur and stabilizing the intensity of laser output from the laser oscillator.

[0010]

In order to achieve the above-mentioned object, a semiconductor laser pumped Q-switch oscillation solid-state laser device according to the present invention pumps a solid-state laser medium by pumping light output from a semiconductor laser, and uses a Q-switch. A laser oscillator that oscillates a Q switch to output a laser is provided, and the laser output of the laser oscillator is used to form minute holes in the workpiece while sequentially moving the irradiation position of the laser output to the workpiece. In a semiconductor laser pumped Q-switch oscillation solid-state laser device for forming a plurality of holes surrounded by a locus in the work piece, the laser irradiation position on the work piece is controlled, and at the same time for each of the holes of the work piece. Positioning that outputs a machining permission signal that turns on after the laser irradiation position has been positioned and correspondingly while forming the holes Control device, and an excitation power supply control pulse signal generating means for generating a first pulse signal having a predetermined frequency and a predetermined duty ratio only during a period when the machining permission signal from the positioning control device is on, The processing permission signal is turned on by intermittently outputting a pulse current of a predetermined peak current value to the semiconductor laser in response to the first pulse signal given from the excitation power source control pulse signal generating means. A power supply device for intermittently irradiating the solid-state laser medium with excitation light from a semiconductor laser during a period, and the first pulse signal generated by the excitation power source control pulse signal generating means during a period in which the first pulse signal is on. Pulse signal generator for Q switch control, which generates a second pulse signal having a frequency higher than that of the pulse signal, and a pulse signal generator for Q switch control. Q switch driving means for opening and closing the Q switch in response to a second pulse signal given by the second pulse signal, and the semiconductor laser being intermittently driven by the first pulse signal with the predetermined duty ratio for continuous driving. Correspondingly, the peak current value of the semiconductor laser is set to be larger than the peak current value in the case of being continuously driven, and the processing permission is set so that one hole is formed during the period when the processing permission signal is ON. Setting means for setting the pulse number (N) of the first pulse signal generated during the period when the signal is on, and the pulse signal generating means for controlling the Q switch is
In the period in which the first pulse signal is on, the first
For the timing when the pulse signal of turns from off to on
Of the laser output that is output when the Q switch is turned on first.
After the peak value is later than this, the Q switch turns on and outputs.
Delay for a predetermined time to reach the peak value of the laser output
The second pulse signal is generated at the specified timing.
In addition, one minute hole is formed for each ON period of one pulse of the first pulse signal, and one hole is formed during the period when the machining permission signal is ON. And

[0011]

A semiconductor laser pumped Q-switch oscillation solid-state laser device according to the next invention is the same as in the above invention.
The frequency of the first pulse signal is 50 to 500 Hz,
When the tee ratio is 1 to 30% and the peak current value is continuously driven.
Characteristic that the maximum peak current value is set to 3 times
And

[0013]

[0014]

[0015]

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a semiconductor laser pumped Q-switched solid state laser device according to the present invention will be described in detail below with reference to the accompanying drawings.

Embodiment 1. 1 shows Embodiment 1 of a semiconductor laser pumped Q-switch oscillation solid-state laser device according to the present invention. In FIG. 1, a semiconductor laser pumped Q-switch oscillation solid-state laser device is generally designated by reference numeral 1.

The laser beam output from the semiconductor laser-excited Q-switch oscillation solid-state laser device 1 is directed to the condenser lens 102 by the reflecting mirror 100 provided in the processing head of the laser processing apparatus, and is condensed by the condenser lens 102. The work W on the XY table 104 is irradiated with the work W
Cutting, the only holes open performed for.

The XY table 104 is moved in the X-axis direction by the X-axis servo motor 106, and the Y-axis servo motor 1 is moved.
08, the workpiece W is moved in the Y-axis direction, and the workpiece W on the XY table 104 is positioned and moved. The X-axis servo motor 106 and the Y-axis servo motor 108 operate according to a position command from the NC device 110 that operates as a positioning control device.

A semiconductor laser pumped Q-switch oscillation solid-state laser device 1 includes a laser diode 3 for outputting pumping light,
A rod-shaped solid-state laser medium 5 excited by excitation light output from the laser diode 3, a total reflection mirror 7 arranged behind the solid-state laser medium 5, and a semi-reflection mirror 9 arranged in front of the solid-state laser medium 5. Optical resonator 11 and optical resonator 1
The laser oscillator 15 includes a Q switch 13 provided in the first optical path.

The laser diode 3 is supplied with a current (LD current) from the LD excitation power supply device 17, and outputs the excitation light (LD excitation output) with the characteristics shown in FIG. This indicates that a laser output almost proportional to the current passed through the laser diode 3 can be obtained.

In the LD excitation power supply device 17, the peak current IP is variably set by the peak current setting device 18, and the first pulse signal outputted from the excitation power supply controlling pulse signal generator 19 is converted into the first pulse signal. The peak current IP is pulsed and output to the laser diode 3 in synchronization.

The pulse signal generator 19 for controlling the excitation power supply is
The frequency setter 21 variably sets the frequency, the duty ratio setter 23 variably sets the duty ratio, and the pulse number setter 25 variably sets the number of output pulses in one positioning completion state, and the frequency set by the frequency setter 21. Then, the first pulse signal having the duty ratio set by the duty ratio setting unit 23 is output as the number of pulses set by the pulse number setting unit 25 under one positioning completion state. Excitation power supply control pulse signal generator 1
The frequency of the 1st pulse signal which 9 outputs is 50-500.
Hz and duty ratio are set in the range of 1 to 30%.

The pulse signal generator 19 for controlling the excitation power source is
When the machining permission signal is given from the NC device 110 after the positioning is completed, the output of the first pulse signal of the number set by the pulse number setting device 25 is started under one positioning completed state, and the pulse number setting device is started. The LD excitation power supply device 1 outputs the first pulse signal having the number of pulses set by 25.
Until the output to 7, the inhibit signal for prohibiting the change of the machining position is output to the NC device 110.

The Q switch 13 is a Q switch drive circuit 27.
Thus, the Q switch control pulse signal generator 29 opens and closes in synchronization with the second pulse signal. In other words,
The Q switch drive circuit 27 receives the second pulse signal from the Q switch control pulse signal generator 29, and opens and closes the Q switch 13 by the second pulse signal.

Pulse signal generator 29 for controlling Q switch
Outputs a second pulse signal whose frequency is variably set by the frequency setter 31 and which has the frequency set by the frequency setter 31. The second pulse signal is inverted by the inverter 33 and the Q switch drive circuit 27 Entered in. The frequency of the second pulse signal set by the frequency setter 31 is limited to a frequency higher than the frequency of the first pulse signal.

Pulse signal generator 29 for controlling Q switch
Inputs the first pulse signal through the delay circuit 35,
The second pulse signal is generated at a timing delayed by a predetermined time with respect to the rising timing of the first pulse signal during the period when the first pulse signal is at the high level.

The delay time d of the second pulse signal with respect to the rising timing of the first pulse signal is the delay circuit 35.
The delay time d is the time when the peak value of the laser output first turned on and output by the Q switch 13 becomes equal to the peak value of the laser output turned on and output by the Q switch 13 thereafter. Is set to.

Next, the operation of the semiconductor laser pumped Q-switch oscillation solid-state laser device will be described with reference to the time chart shown in FIG.

Depending on the machining program or other signal,
The machining permission signal (see FIG. 3A) is sent from the NC device 110 after the positioning is completed and the excitation power source control pulse signal generator 19 is operated.
The pulse signal generator 19 for controlling the excitation power source.
Starts output of the first pulse signal at the frequency set by the frequency setting unit 21 and at the duty ratio set by the duty ratio setting unit 23.

The first pulse signal is the LD excitation power supply 17
Is supplied to the LD excitation power supply device 17, the LD excitation power supply device 17 receives the peak current setting device 18 as shown in FIG.
The current according to the peak current IP set by is synchronized with the first pulse signal, in other words, is output to the laser diode 3 while the first pulse signal is at the high level. As a result, the laser diode 3 outputs the excitation light to the solid-state laser medium 5.

Further, the pulse signal generator 1 for controlling the excitation power source
As shown in FIG. 3 (c), the NC device 9 sends an inhibit signal for prohibiting the change of the machining position in synchronization with the rising of the first first pulse signal after the machining permission signal is turned on. Output to 110. This inhibit signal is output until the last first pulse signal of the pulse number set by the pulse number setting unit 25 falls. As a result, the workpiece W is prevented from being accidentally moved during the laser processing at one positioning position.

As described above, a laser output that is almost proportional to the current passed through the laser diode 3 is obtained, but the temperature of the laser diode 3 rises in accordance with the current passed through the laser diode 3, and the laser diode 3 is caused to generate heat and flow through the laser diode 3. There is an upper limit to the current that can be applied. In the case of continuous energization, the limit is about 35 A in this example, and the output is about 169 W when eight laser diodes 3 are used.

Since the ON voltage of the laser diode 3 is about 2 V, the efficiency of the laser output with respect to the input power is 3
It is about 0.2%. On the other hand, a pulse high current (88
(About A), a laser output of about 550 W is obtained. At this time, the efficiency is considerably high at 39.1%. As a result, even with intermittent pulses with high peak current IP,
When power is supplied to the laser diode 3, highly efficient laser oscillation can be performed.

The semiconductor laser-excited Q-switch oscillation solid-state laser device according to the present invention performs pulse excitation aiming at high-efficiency oscillation at a high peak current. The pulse frequency used for laser processing is set to 50 to 500 Hz, The pulse turn-on time ratio, that is, the duty ratio, is 1 to 30.
If it is set to about%, the peak current IP can flow up to about 3 times as compared with the case of continuous flow. Therefore,
If the duty ratio is set to 30% or less, it is possible to set up to triple the peak current.

Normally, when the laser diode 3 is continuously excited, the peak output of 20 kw and the laser output of 20 khz can be obtained, but in the present invention, the peak output of 50 to 60 is obtained.
It has an effect of obtaining a kW, and since the duty ratio is low, the thermal influence of not only the laser diode 3 but also other optical elements is small.

Even if the duty ratio exceeds 30%, if the peak current IP is reduced, the laser diode 3 does not exceed the heat generation limit, but the pulse effect in laser processing is reduced, so the processing capability is reduced. descend.

The excitation power source control pulse signal generator 19 is
When the output of the first pulse signal is started by giving the machining permission signal from the NC device 110 after the completion of positioning, as shown in FIG. 3C, the output of the first pulse signal is started at the same time. An inhibit signal for prohibiting the change of the machining position is output to the NC device 110.

Pulse signal generator 29 for controlling Q switch
3A, as shown in FIG. 3D, oscillation is started with a slight delay (delay time) d with respect to the rising timing of the first pulse signal output from the excitation power source control pulse signal generator 19. Then, the second pulse signal having the high frequency set by the frequency setter 31 is applied to the Q switch drive circuit 27. As a result, as shown in FIG. 3E, it is possible to obtain a high peak laser output according to the frequency of the second pulse signal.

The delay time d of the second pulse signal with respect to the rising timing of the first pulse signal is the delay circuit 35.
Thus, the peak value of the laser output that is first turned on and output by the Q switch 13 is set to a time at which the peak value of the laser output that is turned on and then output by the Q switch 13 becomes equal to that of the Q switch 13. The peak value of the laser output that is output every time 13 is turned on is uniform, and the processing accuracy and the surface roughness are improved.

At one positioning completion position, the output of the first pulse signal is repeated N times for the number of pulses set by the pulse number setting device 25 to form a predetermined hole in the workpiece W.
Open fluff, the output of the inhibit signal is stopped, NC device 110 may be to position moves the workpiece W for drilling and tapping the open position of the next. During this positioning movement, by canceling the processing permission signal, erroneous laser oscillation will not occur.

[0042] The interlock described above, the holes open only processed by repeating the positioning and laser oscillation, high-speed, reliable, done safely.

The processing example shown in FIG. 4A is a processing in which the hole A of the printed wiring board penetrates the copper foil layers B and C.
Although a high laser output is required, the semiconductor laser pumped Q-switch oscillation solid-state laser device according to the present invention can be processed by the high peak Q-switch oscillation output.

Further, the hole D of the printed wiring board is a non-through hole up to the internal copper foil layer E, and the processing of the hole D requires a fine adjustment of the laser output. In the switch oscillation solid-state laser device, the peak current IP, the duty ratio of the first pulse signal, the pulse number N
By setting the total laser output in one of the holes open only processing can be set with high accuracy, it becomes possible to perform the hole opens only processing of money depth with high accuracy.

Further, in the case Keru relatively large hole F opens, as shown in FIG. 4 (b), a very small hole f which is continuous along the inner periphery of the hole can be processed by an open Keru Becomes In this case, it is advisable to set the number of pulses N to a very large value or to set it to continuous repetition.

Embodiment 2. FIG. 5 shows a second embodiment of a semiconductor laser pumped Q-switch oscillation solid-state laser device. In FIG. 5, the same or the same constituent elements as those shown in FIG. 1 are designated by the same reference numerals as those in FIG. 1, and the description thereof will be omitted.

In this embodiment, a laser diode 51 that outputs excitation light and a rod-shaped solid-state laser medium 53 that is excited by the excitation light output by the laser diode 51.
And the total reflection mirror 5 arranged behind the solid-state laser medium 53.
5 and a semi-reflecting mirror 5 arranged in front of the solid-state laser medium 53
7 and optical resonator 59 and auxiliary laser oscillator 61
Are arranged on the same optical axis as the optical axis of the laser oscillator 15 behind the laser oscillator 15.

The LD excitation power source device 63 of the laser diode 51 is of a continuous energization type, and the auxiliary laser oscillator 61 has the same oscillation wavelength as that of the laser oscillator 15 at least during the processing permission period and continuously oscillates on the same optical axis. Then
A laser output is injected into the laser oscillator 15 from the side of the total reflection mirror 11 behind the laser oscillator 15.

The laser output of the auxiliary laser oscillator 61 may be very small, and here, the solid laser medium 53 is made of the same material as that of the laser oscillator 15.

The total reflection mirror 7 of the laser oscillator 15 is provided with a total reflection coating on the inside and has a reflectance of 98% or more, but when laser light is incident from the rear side, total reflection does not necessarily occur. Is. If a total reflection coating is also provided on the rear surface of the total reflection mirror 7, the laser oscillator 15
Although the efficiency of incidence on the inside is increased, the power required for incidence may be very small, so the laser output of the auxiliary laser oscillator 61 is less than that of the laser oscillator 15 even if the transmittance is considerably poor.
/ 10 to 1/100 is sufficient, so the auxiliary laser oscillator 61
May be a small laser oscillator.

By providing the auxiliary laser oscillator 61 that continuously oscillates, the phase of the laser output of the laser oscillator 15 is synchronized with the laser output of the auxiliary laser oscillator 61. Therefore, a plurality of vertical lines generated when the laser oscillator performs Q switch oscillation. It is possible to prevent mode oscillation and stabilize the intensity of the laser output from the laser oscillator 15.

As can be understood from the above description, according to the semiconductor laser pumped Q-switch oscillation solid-state laser device of the present invention, the machining permission signal is turned on in response to one hole machining, and this machining permission signal is turned on. The semiconductor laser is driven by the first pulse signal only during a certain period to intermittently excite the solid-state laser medium during the ON period of the processing permission signal and perform Q switching during the period when the first pulse signal is ON. To obtain a Q-switched laser pulse, and the peak current value of the semiconductor laser is continuously driven by the first pulse signal corresponding to the amount by which the semiconductor laser is intermittently driven with the predetermined duty ratio for continuous driving. The peak current value is set to a value greater than the peak current value, and The number of pulses (N) of the first pulse signal generated during the period when the processing permission signal is on so that hole formation is performed is set, and the on period of one pulse of the first pulse signal is set. Since one micro hole is formed for each and one hole is formed during the period when the processing permission signal is on, the high peak Q-switch oscillation output can be obtained without causing thermal damage to the semiconductor laser. It becomes possible to perform efficient laser drilling by. Further, according to the present invention, during the period when the first pulse signal is on.
The first pulse signal changes from off to on
Signal, the Q switch first turns on and outputs.
Q switch is turned on after the peak value of the laser output
Specified value that is equal to the peak value of the laser output
Second pulse signal with timing delayed by time
Is generated, so the Q switch turns on.
The peak value of the laser output that is output each time is surely aligned,
Processing accuracy and surface roughness are improved.

[0053]

According to the semiconductor laser pumped Q-switch oscillation solid-state laser device of the next invention, the first pulse signal
Frequency is 50-500Hz, duty ratio is 1-30
%, Peak current value when the peak current value is continuously driven
It is designed to be set up to 3 times as much as
Efficiency due to high peak Q-switch oscillation output without giving
Good laser processing becomes possible.

[0055]

[0056]

[0057]

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a first embodiment of a semiconductor laser pumped Q-switch oscillation solid-state laser device according to the present invention.

FIG. 2 is a graph showing the relationship between LD current and LD excitation output in a semiconductor laser-excited Q-switch oscillation solid-state laser device.

FIG. 3 is a time chart showing the operation of the semiconductor laser pumped Q-switch oscillation solid-state laser device according to the present invention.

[4] (a), is an explanatory view showing a (b) is a hole open only working example, respectively.

FIG. 5 is a configuration diagram showing a second embodiment of a semiconductor laser pumped Q-switch oscillation solid-state laser device according to the present invention.

[Explanation of symbols]

1 Semiconductor laser pumped Q-switch oscillation solid-state laser device,
3 laser diode, 5 solid-state laser medium, 11 optical resonator, 13 Q switch, 15 laser oscillator, 17
LD excitation power supply device, 18 peak current setting device, 19
Excitation power supply control pulse signal generator, 21 frequency setting device, 23 duty ratio setting device, 25 pulse number setting device, 27 Q switch driving circuit, 29 Q switch control pulse signal generator, 31 frequency setting device, 33 inverter, 35 delay circuit, 51 laser diode, 5
3 solid-state laser medium, 59 optical resonator, 61 auxiliary laser oscillator, 63 LD excitation power supply device, 102 condensing lens, 104 XY table, 110 NC device.

Continuation of the front page (56) Reference JP-A-11-224968 (JP, A) JP-A-8-148740 (JP, A) JP-A-9-214041 (JP, A) JP-A-9-260761 (JP , A) JP 60-102785 (JP, A) Actually open 2-60265 (JP, U) Actually open 57-84763 (JP, U) Actually open 63-9170 (JP, U) Special table flat 8-501903 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01S 3/00-3/30

Claims (2)

(57) [Claims] 1. A laser oscillator that excites a solid-state laser medium with excitation light output from a semiconductor laser and oscillates Q-switch with a Q-switch to output a laser, and a laser output of the laser oscillator causes a minute amount to be applied to a workpiece. A semiconductor laser pumped Q-switch oscillation solid-state laser device for forming a plurality of holes surrounded by the movement locus in the workpiece by sequentially moving the irradiation position of the laser output to the workpiece while forming the hole, While controlling the laser irradiation position on the workpiece,
A positioning control device that outputs a processing permission signal that is turned on after completion of positioning of the laser irradiation position with respect to each of the holes of the workpiece and during formation of each of the holes, and from this positioning control device From the excitation power supply control pulse signal generation means for generating a first pulse signal of a predetermined frequency and a predetermined duty ratio only during a period when the processing permission signal is ON, and the excitation power supply control pulse signal generation means. By intermittently outputting a pulse current having a predetermined peak current value to the semiconductor laser in response to a given first pulse signal, the semiconductor laser causes the solid-state laser medium to be turned on while the processing permission signal is on. A power supply device for intermittently irradiating excitation light with, and during a period in which the first pulse signal generated by the excitation power supply control pulse signal generating means is ON, Q switch control pulse signal generating means for generating a second pulse signal having a frequency higher than that of the first pulse signal, and in response to the second pulse signal provided from the Q switch controlling pulse signal generating means. Q switch driving means for opening and closing the Q switch, and continuous peak current value of the semiconductor laser corresponding to the amount by which the semiconductor laser is intermittently driven with the predetermined duty ratio for continuous driving by the first pulse signal. The first current value is set to be larger than the peak current value when driven, and is generated during the period when the machining permission signal is on so that one hole is formed during the period when the machining permission signal is on. Setting means for setting the number of pulses (N) of one pulse signal; and the pulse signal generating means for controlling the Q switch,
In the period in which the first pulse signal is on, the
When the first pulse signal turns from off to on
Then, the laser output that is output when the Q switch is turned on first
The peak value of is output after the Q switch turns on after this
For a predetermined time that is equal to the peak value of the laser output
The second pulse signal is generated at a delayed timing.
While raw, 1 each on period of one pulse of said first pulse signal
A semiconductor laser-excited Q-switch oscillation solid-state laser device, wherein one microhole is formed and one hole is formed during a period when the processing permission signal is on. 2. The frequency of the first pulse signal is 50 to 50.
2. The semiconductor laser pumped Q-switch oscillation solid-state laser according to claim 1, wherein the peak current value is set to a maximum of 3 times the maximum current value when the peak current value is 500 Hz, the duty ratio is 1 to 30%, and the peak current value is continuously driven. apparatus.