TW201841392A - 微發光二極體模組及其製造方法 - Google Patents

微發光二極體模組及其製造方法 Download PDF

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Publication number
TW201841392A
TW201841392A TW106134202A TW106134202A TW201841392A TW 201841392 A TW201841392 A TW 201841392A TW 106134202 A TW106134202 A TW 106134202A TW 106134202 A TW106134202 A TW 106134202A TW 201841392 A TW201841392 A TW 201841392A
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Taiwan
Prior art keywords
light
emitting diode
micro
electrode pad
laser beam
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TW106134202A
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English (en)
Inventor
劉泰京
金大原
尹聖復
元藝琳
文明址
張漢畢
金容必
朴在淳
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南韓商流明斯有限公司
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Priority claimed from KR1020170018811A external-priority patent/KR102657122B1/ko
Priority claimed from KR1020170030833A external-priority patent/KR102381562B1/ko
Application filed by 南韓商流明斯有限公司 filed Critical 南韓商流明斯有限公司
Publication of TW201841392A publication Critical patent/TW201841392A/zh

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Abstract

揭露一種用於製造微發光二極體模組的方法。該方法包括：製備含有複數個電極墊片和複數個發光二極體單元的微發光二極體；製備含有對應於該複數個電極墊片的複數個電極的副載基板；以及透過位於該複數個電極墊片與該複數個電極之間的複數個焊料將該微發光二極體倒裝接合到該副載基板。該倒裝接合包括藉由雷射加熱該複數個焊料。

Description

微發光二極體模組及其製造方法
本發明關於一種用於製造微發光二極體模組的方法，藉由將含有透光基板的微發光二極體(micro-LED)倒裝接合(flip-bonding)到具有顯著不同於該微發光二極體的熱膨脹係數的副載基板(submount substrate)。
已知有使用微發光二極體模組的顯示器。每個微發光二極體模組是藉由將含有複數個發光二極體單元(LED cell)的微發光二極體(微LED)倒裝接合到副載基板來製造。
通常，微LED包括透光藍寶石基板和形成在該透光藍寶石基板上並具有複數個LED單元的氮化鎵半導體發光單元。半導體發光單元包括藉由蝕刻形成的n型半導體層的暴露區域，且複數個LED單元以矩陣形式布置在該n型半導體層的暴露區域上。每個LED單元包括n型半導體層、主動層和p型導電半導體層。每個LED單元的p型導電半導體層上設置有p型電極墊片。n型電極墊片設置在n型半導體層的暴露區域上。
副載基板包括對應於微LED的電極墊片設置的複數個電極。微LED透過焊料凸塊倒裝接合到副載基板，使得 微LED的電極墊片連接到副載基板的電極。為了使微LED倒裝接合到副載基板，構成每個焊料凸塊的至少一部分的焊料應當被加熱到其熔點附近的溫度。然而，由於矽基底(Si-based)副載基板的熱膨脹係數與藍寶石基板的熱膨脹係數顯著不同，因此在倒裝接合期間，在加熱和冷卻時，矽基底基板與藍寶石基板之間的膨脹和收縮應變存在較大的差異。這些差異導致副載基板與微LED之間的嚴重錯位(misalignment)。由於此錯位，微LED的電極墊片不會連接到副載基板的電極，且在更嚴酷的情況下，微LED的電極墊片會錯誤連接到副載基板的電極，造成嚴重檢測，如電氣短路。
例如，微LED所基於的藍寶石基板具有7.6μmm-1K的熱膨脹係數，且矽基底副載基板具有2.6μmm-1K的熱膨脹係數。亦即，藍寶石基板的熱膨脹係數約為矽基底副載基板的2.5倍。基板的熱膨脹係數取決於它們的溫度。對於凸塊使用高熔點焊料需要高的倒裝接合溫度。在這種情況下，藍寶石基板與副載基板之間的熱膨脹係數差異較大，導致微LED與副載基板之間的錯位，使得微LED難以黏合到副載基板。例如，當將焊料的熔點(260℃)設定為黏合溫度時，每1cm的基板產生5μm至6μm的錯位，使得在需要2μm的黏合精度的過程中，如微LED的倒裝接合，實質上不能使用焊料。
因此，在本領域中仍需要一種由於在微LED被倒裝接合到副載基板時，微LED的藍寶石基板與副載基板之間的 熱膨脹係數的差異導致錯位問題的解決方案。
[先前技術文獻] [專利文獻]
(專利文獻1)韓國發明專利第10-1150861(2012年5月22日核准)。
(專利文獻2)韓國發明專利第10-0470904(2005年1月31日核准)。
本發明是鑑於上述問題而完成的，其目的在於提供一種用於製造微LED模組的方法，其不存在由於基板之間的熱膨脹係數的差異所導致有關錯位的問題。
根據本發明之一個態樣的用於製造微LED模組的方法包括：製備包括複數個電極墊片和複數個LED單元的微LED；製備包括對應於該複數個電極墊片的複數個電極的副載基板；以及透過位於該複數個電極墊片與該複數個電極之間的複數個焊料將該微LED倒裝接合到該副載基板，其中該倒裝接合包括藉由雷射加熱該複數個焊料。
根據一個實施例，該倒裝接合包括藉由複數個雷射光束局部地加熱該複數個焊料。
根據一個實施例，在該LED單元上形成單獨電極墊片，且該倒裝接合包括藉由依序通過該LED單元和該單獨電極墊片的雷射來加熱位於該單獨電極墊片與該副載基板之間的焊料。
根據一個實施例，該單獨電極墊片對於該雷射是透射 的。
根據一個實施例，該單獨電極墊片包括該雷射通過的腔。
根據一個實施例，該微LED包括在該複數個LED單元周圍的磊晶層(epilayer)的表面上形成的共用電極墊片，且該倒裝接合包括藉由依序通過該磊晶層和該共用電極墊片的雷射來加熱位於該共用電極墊片與該副載基板之間的焊料。
根據一個實施例，該共用電極墊片對於該雷射是透射的。
根據一個實施例，該共用電極墊片包括該雷射通過的腔。
根據一個實施例，該倒裝接合包括藉由從該微LED的一側到另一側垂直穿過該微LED所通過的複數個雷射光束來加熱該複數個焊料，且該複數個雷射光束包括穿過該基板和其中不存在該LED單元的磊晶層的雷射光束、以及穿過該基板和其中存在該LED單元的磊晶層的雷射光束。
根據一個實施例，該倒裝接合包括藉由從該微LED的一側到另一側垂直穿過該微LED所通過的複數個雷射光束來加熱該複數個焊料及使用聚焦透鏡來使該雷射光束聚焦在對應的焊料上。
根據一個實施例，該倒裝接合包括在藉由從該微LED的一側到另一側垂直穿過該微LED所通過的複數個雷射光束來加熱該複數個焊料之前，將複數個雷射光束照射單 元放置在對應於在該微LED的一側處的複數個焊料之配置的配置。
根據一個實施例，在藉由從該微LED的一側到另一側垂直穿過該微LED所通過的複數個雷射光束來加熱該複數個焊料之前，該將複數個雷射光束照射單元放置在對應於在該微LED的一側處的複數個焊料之配置的配置包括：連接到雷射光源的光導、用於使雷射光束通過該光導進入彼此平行的準直器(collimator)、用於控制平行雷射光束的橫截面尺寸的光束控制器、以及用於聚焦在對應的焊料上控制橫截面尺寸的該平行雷射光束的聚焦透鏡。
根據一個實施例，該倒裝接合可包括以1：1的比率使該複數個焊料與複數個雷射光束匹配，使得該複數個焊料藉由該複數個雷射光束加熱。
根據一個實施例，該倒裝接合可包括以1：1的比率使複數個雷射光束照射單元與該複數個焊料匹配，使得該複數個焊料藉由從該複數個雷射光束照射單元照射的雷射光束加熱。
根據一個實施例，該倒裝接合可包括以1：n(其中n是等於或大於2的自然數)的比率使複數個雷射光束照射單元與該複數個焊料匹配，使得兩個或更多個焊料藉由從每個雷射光束照射單元照射的雷射光束以線性或Z字形圖案(zigzag pattern)移動來加熱。
根據一個實施例，該倒裝接合可包括使兩個或更多個雷射光束照射單元與兩個或更多個焊料組匹配，使得每個 雷射光束照射單元加熱對應的焊料組中的焊料。
根據本發明之另一態樣的微LED模組包括：微LED，包括基板、包括複數個LED單元的磊晶層、設置在該複數個LED單元上的第二導電的單獨電極墊片、以及設置在該複數個LED單元周圍的第一導電的共用電極；副載基板，包括對應於單獨電極墊片與共用電極墊片的複數個電極；以及位於電極與單獨電極墊片和共用電極墊片之間的焊料；其中該焊料藉由雷射加熱，然後硬化，使得該電極連接到該單獨電極墊片和該共用電極墊片。
根據一個實施例，該基板、該磊晶層、該單獨電極墊片和該共用電極墊片對於該雷射光束是透射的，使得該焊料藉由從該微LED的一側到另一側穿過該微LED所通過的雷射加熱。
根據一個實施例，該單獨電極墊片可由雷射光束透光材料製成。
根據一個實施例，該單獨電極墊片可包括該雷射通過的腔。
根據一個實施例，該共用電極墊片可由該雷射光束透光材料製成。
根據一個實施例，該共用電極墊片可包括該雷射通過的腔。
本發明的微LED模組被建構成使得雷射光束局部地照射到位於微LED與副載基板之間的焊料上以快速地熔化該焊料。由於這種結構，沒有大量的熱被施加到位於雷 射光束範圍之外的雷射光束傳輸微LED和副載基板。因此，本發明可提供由於微LED與副載基板之間的熱膨脹係數的差異所導致錯位的問題的解決方案。
5a‧‧‧第一卡盤
5b‧‧‧第一溫度控制單元
6a‧‧‧第二卡盤
6b‧‧‧第二溫度控制單元
100‧‧‧微LED
101‧‧‧溝槽
102‧‧‧暴露區域
130‧‧‧LED單元
131‧‧‧藍寶石基板
132、134‧‧‧半導體層
133‧‧‧主動層
140、150‧‧‧電極墊片
142、152‧‧‧腔
160、250‧‧‧鈍化層
162‧‧‧第一孔
164‧‧‧第二孔
200‧‧‧副載基板
201‧‧‧基板材料
240‧‧‧電極
252‧‧‧孔
260‧‧‧凸塊
261‧‧‧UBM
262‧‧‧柱
263‧‧‧焊料
300‧‧‧PR
302‧‧‧開口
1000‧‧‧雷射光束照射單元
1100‧‧‧光導
1200‧‧‧準直器
1300‧‧‧光束控制器
1400‧‧‧聚焦透鏡
S101~S111‧‧‧步驟
本發明的這些及/或其它態樣和優點將從結合圖式與實施例的以下描述而變得顯而易見並更容易理解。
圖1a至圖1e示出根據本發明之第一實施例構造微LED的製程。
圖2是表示本發明之第一實施例中使用的副載基板的局部剖視圖。
圖3和圖4示出根據本發明之第一實施例的在副載基板上形成包括焊料的凸塊的製程。
圖5a、圖5b和圖5c示出用於將微LED倒裝接合至副載基板的製程。
圖6示出本發明之第一實施例的另一個實例。
圖7和圖8示出本發明之第一實施例的其他實例。
圖9示出根據本發明之第二實施例的用於將微LED倒裝接合至副載基板的製程。
圖10顯示在圖9所示的倒裝接合製程期間微LED與副載基板的加熱-冷卻曲線。
現在將參照圖式描述本發明的第一實施例和第二實施例。圖式和實例被簡化和例示，以使得本案所屬技術領域中具有通常知識者能夠容易地理解本發明，因此它們不應 被解釋為限制本發明的範圍。
本發明的第一實施例和第二實施例提供一種藉由將微LED倒裝接合到作為主動矩陣式基板的副載基板來製造微LED模組的方法。根據本發明的第一實施例和第二實施例，首先，製備包括電路和電極的矽基底副載基板，並構建基於藍寶石基板的微LED。
下文將依序說明根據本發明的第一實施例和第二實施例的微LED的建構、凸塊的形成、以及將微LED倒裝接合到副載基板。
[第一實施例] [微LED的建構]
參考圖1a至圖1e，將給出關於建構微LED的方法的說明。
首先，如圖1a所示，在透光藍寶石基板131的主表面上形成包括n型半導體層132、主動層133和p型半導體層134的磊晶層。該透光藍寶石基板131具有7.6μmm-1K的熱膨脹係數。
接著，如圖1b所示，使用遮罩圖案將該磊晶層蝕刻到預定深度，以形成n型半導體層132的溝槽101和暴露區域102。此蝕刻的結果，形成複數個LED單元130。複數個LED單元130被溝槽101分開並且被n型半導體層132的暴露區域102圍繞。每個LED單元130具有其中在n型半導體層132上形成的主動層133和p型半導體層134的結構。儘管未圖示，但是可以在n型半導體層132和藍寶 石基板131之間形成緩衝層。具有特定功能的其他半導體層可被插入在n型半導體層132與主動層133之間、主動層133與p型半導體層134之間，並且暴露在p型半導體層134的表面上。由於磊晶層和透光藍寶石基板131對雷射光束是透射的，因此LED單元130對雷射光束也是透射的。
接著，如圖1c所示，在LED單元130的每個p型半導體層134上形成雷射透光p型電極墊片150，並且在n型半導體層132的暴露區域102的外圍處形成雷射透光n型電極墊片140。p型電極墊片150和n型電極墊片140被設計成具有不同的厚度。此設計補償了p型半導體層134與n型半導體層132之間的階梯高度(step height)，並允許其黏合有焊料的p型電極墊片150的表面處於與要被黏合的n型電極墊片140的表面相同的位準(level)。
接著，如圖1d所示，形成鈍化層(passivation layer)160，以覆蓋n型半導體層132的LED單元130和暴露區域102。
接著，如圖1e所示，形成暴露出p型電極墊片150的第一孔162和暴露出n型電極墊片140的第二孔164。該第一孔162和該第二孔164可以藉由使用遮罩圖案進行蝕刻來形成。在此實施例中，鈍化層160形成為沿著LED單元130的橫截面輪廓實質上相同的厚度，使得相鄰的LED單元130之間的溝槽101的寬度和深度減小，但是溝槽保持不被移除。或者，鈍化層160可以完全填充溝槽101。
[副載基板的製備和凸塊的形成]
首先參考圖2，製備尺寸為約15,000μm×10,000μm的矽基底副載基板200，隨後形成柱狀凸塊。副載基板200可包括對應於複數個微LED單元的複數個CMOS單元、對應於微LED的p型電極墊片的複數個單獨電極240、以及對應於微LED的n型電極墊片的共用電極(未圖示)。副載基板200的複數個電極240在矽基底基板材料201上布置成矩陣狀並與CMOS單元連接。形成鈍化層250以覆蓋電極240。該鈍化層250具有孔252，單獨電極240通過該孔被暴露出。
參照圖3和圖4，藉由包括以下步驟的製程形成凸塊：第一清洗S101；形成凸塊底下金屬層(under bump metallurgy；UBM)S102；光刻微影(photolithography)S103；浮渣去除S104；Cu電鍍S105；焊料金屬電鍍S106；PR剝離S107；UBM蝕刻S108；第二清洗S109；回流S110；以及第三清洗S111。
在S101中，如圖4的(a)所示，利用洗滌器清洗副載基板200。在副載基板200中，在包括CMOS單元的副載材料201上形成由Al或Cu材料製成的墊片型電極240，並且在基板材料201上形成具有孔252的鈍化層250。CMOS單元藉由CMOS製程形成，並且電極240的一個區域通過孔252被暴露出。
在S102中，如圖4的(b)所示，在副載基板200上形成UBM261以覆蓋鈍化層250和電極240。UBM261用於 增加電極240對Cu柱的附著並防止焊料擴散。在此實施例中，UBM261可具有Ti/Cu的分層結構，並且可藉由濺射對應的金屬而形成。
在S103中，如圖4的(c)所示，在副載基板200上的UBM261的整個區域上形成光阻(photoresist；PR)300。之後，在該光阻上放置遮罩圖案(未圖示)並施加光以形成開口302，通過該開口302，僅直接形成在電極240上的UBM 261的一個區域被暴露。接著，進行S104以移除在光刻微影期間形成的浮渣。
接著，如圖4的(d)所示，透過PR300的開口302鍍覆Cu以形成Cu柱262(S105)，然後將SnAg作為焊料金屬鍍覆在Cu柱262上，以形成具有預定厚度之呈層形式的SnAg焊料263(S106)。在本文應注意，Cu可以是Cu金屬或其合金。
接著，進行S107以剝離PR。結果，如圖4的(e)所示，包括Cu柱262和焊料263的凸塊的上表面和側表面被暴露出。
接著，如圖4的(f)所示，進行UBM蝕刻，使得僅位於Cu柱262正下方的UBM261的部分保持未被移除，並且藉由蝕刻移除UBM261的其他部分(S108)。然後，進行S109以移除殘留物。在UBM蝕刻(S109)之後，所得到的凸塊260具有其中Cu柱262和焊料263依序地堆疊在形成在副載基板200的電極240上的UBM261上的結構。接著，進行回流(S110)。結果，呈層形式的焊料263熔融及 凝固而形成半球狀。或者，焊料263可具有其橫截面為半圓形的形狀。快速熱處理(RTP)適用於此回流。接著，進行第三次清洗以移除殘留物(S111)。
較佳地，副載基板200上的相鄰的Cu柱凸塊260之間的間隔對應於Cu柱262的直徑。期望的是，相鄰的Cu柱凸塊260之間的間隔不超過5μm。如果間隔超過5μm，則Cu柱凸塊260的直徑和所得到的LED單元的尺寸會增加，導致包括微LED的顯示器的精度降低。
[倒裝接合]
參考圖5a、圖5b和圖5c，將基於藍寶石基板131的微LED100倒裝接合到基於矽基板材料的副載基板200。該矽基板材料具有2.6μmm-1K的熱膨脹係數，並且藍寶石基板131具有7.6μmm-1K的熱膨脹係數，其大約是矽基板材料的2.5倍。
如前所述，副載基板200的複數個電極與微LED100的電極墊片150對應配置。在複數個電極上形成有凸塊260。每個凸塊260由Cu柱262和SnAg焊料(亦即，焊料帽)組成。如上簡要提到的，微LED100的LED單元130和電極墊片140和電極墊片150對雷射光束是透射的，使得雷射光束到達並局部地加熱焊料263。例如，電極墊片140和電極墊片150由通過其可傳輸雷射光束的導電的透明金屬化合物製成。
在柱262上形成的焊料263位於微LED100的電極墊片140、電極墊片150與副載基板200的電極之間之後， 藉由雷射光束局部地加熱焊料263來允許將微LED 100的電極墊片140和電極墊片150黏合到副載基板200的電極上。以下將詳細說明該黏合。
使用雷射光束將微LED 100倒裝接合到副載基板200。為此，首先，有必要將布置在微LED100的LED單元130上的單獨電極墊片150和布置在微LED100的周圍處的共用電極墊片140布置為面向副載基板200的電極，並且將焊料263或包括焊料263的凸塊260定位在副載基板200的電極與微LED100的電極墊片之間。因此，複數個焊料263以與微LED100與副載基板200之間的複數個電極墊片140、電極墊片150相對應的配置進行配置。
接著，將複數個雷射光束照射單元1000以與微LED100的上側的焊料263相同的布置放置。每個雷射光束照射單元1000包括連接到雷射光源的光導1100、用於使雷射光束通過該光導進入彼此平行的準直器1200、用於控制平行雷射光束的橫截面尺寸的光束控制器1300、以及用於聚焦其橫截面尺寸被控制在一個點上的平行雷射光束的聚焦透鏡1400。儘管未示出，但是每個雷射光束照射單元1000可進一步包括雷射放大器、光耦合器和雷射振盪控制器。根據焊接材料的熔點適當選擇雷射光束的功率。
可同時操作該複數個雷射光束照射單元1000。在此情況下，雷射光束L透過光導1100被提供給準直器1200，準直器1200使雷射光束彼此平行並輸出該平行的雷射光束，該光束控制器1300延伸該平行的雷射光束的直徑，且 該聚焦透鏡1400允許直徑被延伸的該平行的雷射光束穿過微LED100，並聚焦在與該微LED100的對應的電極墊片140和電極墊片150接觸的焊料263上。結果，藉由雷射光束L聚焦的焊料263被加熱並熔化。由於雷射光束通過微LED100而不聚焦在微LED100上，所以雷射光束L加熱微LED100的效果可以忽略不計。因此，在微LED100中不會發生熱膨脹和收縮。在被雷射光束L快速加熱之後，焊料263被冷卻並硬化，以將微LED100的電極墊片140和電極墊片150黏合到副載基板200的電極。較佳地，雷射光束L的聚焦位置在熔化之前在對應的焊料的高度的一至三分之二之間被確定。如果雷射光束L的聚焦位置超過焊料的高度的三分之二(亦即，接近微LED100)，則LED單元130和電極墊片140或電極墊片150可能會被熱損壞。同時，如果雷射光束L的聚焦位置小於焊料的高度的三分之一，則副載基板200的電路可能被熱損壞的風險很高。
[另一個實例]
可選地，如圖6a所示，電極墊片140和電極墊片150可由對雷射光束L為不透射的材料製成，並且可具有分別通過雷射光束L的腔142和腔152。每個腔142和腔152在其一側處與微LED100的雷射光束傳輸LED單元130接觸，並且朝向布置在副載基板200與微LED100之間的對應的焊料263開口。當雷射光束照射單元1000被操作時，雷射光束L依序地通過聚焦透鏡1400、微LED100以及電 極墊片140和電極墊片150的腔142和腔152，並到達及聚焦在焊料263上。焊料263被硬化以將微LED 100的電極墊片在被雷射光束熔化之後連接到副載基板200的電極(或形成在電極上的柱)上。熔化的焊料263填充腔142和腔152，使得電極墊片和電極之間可更可靠的黏合。
[其他實例]
如上述實例中所述，複數個雷射光束照射單元1000以1：1的比率與複數個焊料匹配，使得從複數個雷射光束照射單元1000照射的複數個雷射光束L以1：1的比率加熱焊料。在圖7中示出了本發明的其他實例。參考圖7，每個雷射光束照射單元1000可參與加熱若干焊料，同時在一定方向上移動。亦即，每個雷射光束照射單元1000可以1：n(其中n是等於或大於2的自然數)的比率參與加熱兩個或更多個焊料。
圖8示出使用其數目小於焊料數目的雷射光束照射單元的實例。例如，每個雷射光束照射單元可以線性(圖8的(a))或Z字形圖案(圖8的(b))加熱若干焊料263。或者，如圖8的(c)和(d)所示，複數個雷射光束L1、L2、L3和L4可加熱排列在組G1、G2、G3和G4中的焊料263。雷射光束照射單元可以除了線性(圖8的(c))或Z字形圖案(圖8的(d))以外的各種圖案移動的同時加熱焊料組。
如上所述，應當理解，倒裝接合的執行可藉由使複數個雷射光束照射單元與複數個焊料以1：1的比率匹配，使得從每個複數個雷射光束照射單元照射的雷射光束加熱對 應的焊料；藉由使複數個雷射光束照射單元與複數個焊料以1：n(其中n是等於或大於2的自然數)的比率匹配，使得從每個複數個雷射光束照射單元照射的雷射光束在雷射光束照射單元以線性或Z字形圖案移動的同時加熱兩個或更多個焊料；或藉由使兩個或更多個雷射光束照射單元與兩個或更多個焊料組匹配，使得每個雷射光束照射單元加熱對應的焊料組中的焊料。
特別地，基於組中排列的焊料進行加熱的倒裝接合可提供當雷射光束與焊料以1：1的比率匹配時所遇到的經濟效率低和工作空間利用率低的問題以及當使用一個雷射光束照射單元加熱所有焊料時所遇到的長時間加熱和冷卻的問題的解決方案。
儘管已經基於藉由包括藍寶石基板的微LED的雷射光束加熱焊料來說明上述實例，但應瞭解，可以藉由通過雷射光束傳輸副載基板的雷射光束照射到焊料上來進行焊接。
[第二實施例] [微LED的建構]
微LED可與參考圖1a至圖1e所說明的實質上相同的製程所建構。
[副載基板的製備和凸塊的形成]
藉由與參考圖3和圖4所說明的實質上相同的製程來製備副載基板並形成凸塊。
[倒裝接合]
如圖9的(a)和(b)所示，將基於藍寶石基板131的微LED100倒裝接合到基於矽基板材料的副載基板底200。該矽基板材料具有2.6μmm-1K的熱膨脹係數，並且藍寶石基板131具有7.6μmm-1K的熱膨脹係數，其大約是矽基板材料的2.5倍。
如前所述，副載基板200包括對應於微LED100的電極墊150設置的複數個電極。凸塊260被形成在該複數個電極上。每個凸塊260由Cu柱262和SnAg焊料(亦即，焊料帽)組成。
微LED100透過凸塊而倒裝接合到副載基板200，使得微LED100的電極墊片150連接至副載基板200的電極。
為了使微LED100倒裝接合到副載基板200，構成每個焊料凸塊260的至少一部分的焊料應當被加熱到其熔點附近的溫度。然而，在不控制微LED100和副載基板200的溫度的情況下執行傳統的倒裝接合製程的情況下，由於矽基底副載基板200的熱膨脹係數與微LED100的藍寶石基板131的熱膨脹係數顯著不同，所以觀察到矽基底副載基板200與藍寶石基板131之間的應變差異，導致副載基板200與其倒裝接合的微LED100之間的嚴重錯位。藍寶石基板的熱膨脹係數比矽基底副載基板的熱膨脹係數高約2.5倍。本發明較佳用於熱膨脹係數相差2倍的兩個基板之間的倒裝接合。
例如，當期望基於1cm長的藍寶石基板131將微LED100在焊料被熔融的250℃下與1cm長的矽基底副載 基板200進行倒裝接合時，由於矽的熱膨脹係數，副載基板200被延長了5.85μm，並且由於藍寶石的熱膨脹係數，微LED100的透光藍寶石基板131被延長了17.1μm。亦即，在黏合期間，兩個基板之間的長度差異是11.25μm。結果，此長度差異導致嚴重的單元錯位。
為了解決單元錯位的問題，本發明考慮了包括驅動IC和電路的矽基底副載基板200的熱膨脹係數和藍寶石基板131的熱膨脹係數。基於這種考慮，微LED100被倒裝接合到副載基板200是藉由加熱微LED100與副載基板200之間的焊料263，更具體地，插入在形成在微LED100的LED單元130上的電極墊片150與副載基板200之間的凸塊260的焊料263，同時控制矽基底藍寶石基板200和藍寶石基板131的溫度為不同的值。
藍寶石基板131的溫度藉由安裝在與透光藍寶石基板131面對面接觸以支撐微LED100的第一卡盤5a上的第一溫度控制單元5b控制，且矽基底副載基板200的溫度藉由安裝在第二卡盤6a上以支撐副載基板200的第二溫度控制單元6b控制。
如圖10所示，在倒裝接合其間，在加熱區A1、保持區A2和冷卻區A3中，將微LED100的副載基板200和藍寶石基板131的溫度控制為不同的值。
在加熱區A1中，透光藍寶石基板131的溫度藉由安裝在第一卡盤5a上的第一溫度控制單元5b沿著從室溫到第一保持溫度(約170℃至180℃)的第一加熱曲線線性升 高，且矽基底副載基板200的溫度藉由安裝在第二卡盤6a上的第二溫度控制單元6b沿著從室溫到第二保溫溫度(約350℃至400℃)的第二加熱曲線線性升高。
在保持區A2中，施加垂直力以對其間插入熔融焊料264的副載基板200和微LED100加壓，藍寶石基板131在第一保持溫度(125℃)下維持指定的時間，並且矽基底基板200在第二保持溫度(260℃)下維持指定的時間。
在保持區域中，藍寶石基板131和副載基板200開始將其溫度維持在相同的點a1並完成維持其溫度維持在相同的點a2。
在冷卻區域A3中，透光藍寶石基板131從第一保持溫度冷卻至室溫，並且將矽基底基板200從第二保持溫度冷卻至室溫。在冷卻區域A3中，較佳是藍寶石基板131的冷卻曲線與矽基底副載基板200的冷卻曲線相同。因此，在冷卻區域中，透光藍寶石基板131冷卻至室溫的時間比副載基板200冷卻至室溫的時間早。
如果透光藍寶石基板131的冷卻曲線與副載基板200的冷卻曲線過度地不同，為了同時完成藍寶石基板131和副載基板200的冷卻，觀察到藍寶石基板131與副載基板200之間的收縮應變的顯著差異，結果，焊料連接被切斷且LED單元錯位。

Claims (20)

  1. 一種用於製造微發光二極體模組的方法，包括以下步驟：製備包括複數個電極墊片和複數個發光二極體單元的微發光二極體；製備包括對應於該複數個電極墊片的複數個電極的副載基板；以及透過位於該複數個電極墊片與該複數個電極之間的複數個焊料將該微發光二極體倒裝接合到該副載基板，其中該倒裝接合包括藉由雷射加熱該複數個焊料。
  2. 如請求項1所記載之用於製造微發光二極體模組的方法，其中該倒裝接合包括：藉由複數個雷射光束局部地加熱該複數個焊料。
  3. 如請求項1所記載之用於製造微發光二極體模組的方法，其中在該發光二極體單元上形成單獨電極墊片，且該倒裝接合包括藉由依序通過該發光二極體單元和該單獨電極墊片的雷射來加熱位於該單獨電極墊片與該副載基板之間的焊料。
  4. 如請求項3所記載之用於製造微發光二極體模組的方法，其中該單獨電極墊片對於該雷射是透射的。
  5. 如請求項3所記載之用於製造微發光二極體模組的方法，其中該單獨電極墊片包括該雷射通過的腔。
  6. 如請求項1所記載之用於製造微發光二極體模組的方法，其中該微發光二極體包括在該複數個發光二極體 單元周圍的磊晶層的表面上形成的共用電極墊片，且該倒裝接合包括藉由依序通過該磊晶層和該共用電極墊片的雷射來加熱位於該共用電極墊片與該副載基板之間的焊料。
  7. 如請求項6所記載之用於製造微發光二極體模組的方法，其中該共用電極墊片對於該雷射是透射的。
  8. 如請求項6所記載之用於製造微發光二極體模組的方法，其中該共用電極墊片包括該雷射通過的腔。
  9. 如請求項1所記載之用於製造微發光二極體模組的方法，其中該倒裝接合包括：藉由從該微發光二極體的一側到另一側垂直穿過該微發光二極體所通過的複數個雷射光束來加熱該複數個焊料，且該複數個雷射光束包括：穿過該基板和其中不存在該發光二極體單元的磊晶層的雷射光束、以及穿過該基板和其中存在該發光二極體單元的磊晶層的雷射光束。
  10. 如請求項1所記載之用於製造微發光二極體模組的方法，其中該倒裝接合包括：藉由從該微發光二極體的一側到另一側垂直穿過該微發光二極體所通過的複數個雷射光束來加熱該複數個焊料及使用聚焦透鏡來使該雷射光束聚焦在對應的焊料上。
  11. 如請求項1所記載之用於製造微發光二極體模組的方法，其中該倒裝接合包括：在藉由從該微發光二極體的一側到另一側垂直穿過該微發光二極體所通過的複數個雷射光束來加熱該複數個焊料之前，將複數個雷 射光束照射單元放置在對應於在該微發光二極體的一側處的複數個焊料之配置的配置。
  12. 如請求項11所記載之用於製造微發光二極體模組的方法，其中在藉由從該微發光二極體的一側到另一側垂直穿過該微發光二極體所通過的複數個雷射光束來加熱該複數個焊料之前，該將複數個雷射光束照射單元放置在對應於在該微發光二極體的一側處的複數個焊料之配置的配置包括：連接到雷射光源的光導、用於使雷射光束通過該光導進入彼此平行的準直器、用於控制平行雷射光束的橫截面尺寸的光束控制器、以及用於聚焦在對應的焊料上控制橫截面尺寸的該平行雷射光束的聚焦透鏡。
  13. 如請求項1所記載之用於製造微發光二極體模組的方法，其中該倒裝接合包括：以1：1的比率使該複數個焊料與複數個雷射光束匹配，使得該複數個焊料藉由該複數個雷射光束加熱。
  14. 如請求項1所記載之用於製造微發光二極體模組的方法，其中該倒裝接合包括：以1：1的比率使複數個雷射光束照射單元與該複數個焊料匹配，使得該複數個焊料藉由從該複數個雷射光束照射單元照射的雷射光束加熱。
  15. 如請求項1所記載之用於製造微發光二極體模組的方法，其中該倒裝接合包括：以1：n的比率使複數個雷射光束照射單元與該複數個焊料匹配，使得兩個或更 多個焊料藉由從每個雷射光束照射單元照射的雷射光束以線性或Z字形圖案移動來加熱，其中n是等於或大於2的自然數。
  16. 如請求項1所記載之用於製造微發光二極體模組的方法，其中該倒裝接合包括：使兩個或更多個雷射光束照射單元與兩個或更多個焊料組匹配，使得每個雷射光束照射單元加熱對應的焊料組中的焊料。
  17. 一種微發光二極體模組，包括：微發光二極體，包括基板、包括複數個發光二極體單元的磊晶層、設置在該複數個發光二極體單元上的第二導電的單獨電極墊片、以及設置在該複數個發光二極體單元周圍的第一導電的共用電極；副載基板，包括對應於單獨電極墊片與共用電極墊片的複數個電極；以及位於電極與單獨電極墊片和共用電極墊片之間的焊料；其中該焊料藉由雷射加熱，然後硬化，使得該電極連接到該單獨電極墊片和該共用電極墊片。
  18. 如請求項17所記載之微發光二極體模組，其中該基板、該磊晶層、該單獨電極墊片和該共用電極墊片對於該雷射是透射的，使得該焊料藉由從該微發光二極體的一側到另一側穿過該微發光二極體所通過的雷射加熱。
  19. 如請求項17所記載之微發光二極體模組，其中該單獨電極墊片由雷射光束透光材料製成。
  20. 如請求項17所記載之微發光二極體模組，其中該單獨電極墊片或該共用電極墊片包括該雷射通過的腔。
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