JP6649997B2 - マイクロledモジュールのフリップチップボンディング方法 - Google Patents
マイクロledモジュールのフリップチップボンディング方法 Download PDFInfo
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- JP6649997B2 JP6649997B2 JP2018126761A JP2018126761A JP6649997B2 JP 6649997 B2 JP6649997 B2 JP 6649997B2 JP 2018126761 A JP2018126761 A JP 2018126761A JP 2018126761 A JP2018126761 A JP 2018126761A JP 6649997 B2 JP6649997 B2 JP 6649997B2
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- 239000000758 substrate Substances 0.000 claims description 210
- 229910000679 solder Inorganic materials 0.000 claims description 77
- 229910052594 sapphire Inorganic materials 0.000 claims description 49
- 239000010980 sapphire Substances 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 claims description 44
- 238000010438 heat treatment Methods 0.000 claims description 40
- 238000001816 cooling Methods 0.000 claims description 30
- 238000012423 maintenance Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 229910007637 SnAg Inorganic materials 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 238000005272 metallurgy Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 238000003825 pressing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Description
前記昇温区間において、前記LED基板の温度は、常温から第1維持温度まで第1加熱勾配で上昇し、前記サブマウント基板の温度は、常温から前記第1維持温度よりも高い第2維持温度まで第2加熱勾配で上昇し、前記第2加熱勾配は、前記第1加熱勾配よりも大きくあり得る。
前記加熱温度維持区間において、前記LED基板の温度は、前記第1維持温度に一定時間維持され、前記サブマウント基板の温度は、前記第2維持温度に一定時間維持され得る。
前記冷却区間において、前記LED基板の温度は、前記第1維持温度から常温まで下降し、前記サブマウント基板の温度は、前記第2維持温度から常温まで下降し得る。
前記冷却区間において、前記LED基板の冷却が完了する時点と前記サブマウント基板の冷却が完了する時点とは、異なり得る。
前記冷却区間において、前記LED基板の冷却勾配と前記サブマウント基板の冷却勾配とは、同一であり得る。
前記フリップチップボンディングする段階は、前記マイクロLEDを固定するチャックに備えられた温度調節部で前記LED基板の温度を制御し得る。
前記フリップチップボンディングする段階は、前記サブマウント基板を固定するチャックに備えられた温度調節部で前記サブマウント基板の温度を制御し得る。
前記LED基板はサファイア基板であり、前記多数のLEDセルの各々は、前記サファイア基板上に成長させたn型半導体層、活性層、及びp型半導体層を含むエピ層をエッチングして形成され得る。
前記サブマウント基板は、Si基盤の基板母材、前記多数のLEDセルに対応するように前記Si基盤の基板母材に形成された多数のCMOSセル、及び前記多数のCMOSセルに連結される多数の電極を含み得る。
前記マイクロLEDを準備する段階は、前記LED基板上のn型半導体層の露出領域上に前記多数のLEDセルをマトリックス配列で形成する段階を含み、前記多数のLEDセルの各々は、n型半導体層、活性層、及びp型半導体層を含み得る。
前記マイクロLEDを準備する段階は、前記n型半導体層の露出領域上にn型電極パッドを形成し、前記多数のLEDセルの各々のp型半導体層にp型電極パッドを形成する段階を含み得る。
前記フリップチップボンディングする段階は、多数のソルダーを用いて前記多数のp型電極パッド及び前記n型電極パッドを、前記サブマウント基板上に形成された多数の個別電極及び共通電極にそれぞれ連結し得る。
前記マイクロLEDを準備する段階は、前記多数のLEDセル及び前記n型半導体層の露出領域を全て覆うように不動態層を形成し、前記多数のp型電極パッド及び前記n型電極パッドを露出させるパッド露出ホールを形成する段階を含み得る。
前記サブマウント基板は、Si基盤の基板母材、前記多数のLEDセルに対応するように前記Si基盤の基板母材に形成された多数のCMOSセル、及び前記多数のCMOSセルに連結された多数の電極を含み得る。
前記LED基板と前記サブマウント基板との間の熱膨張係数の差は2倍以上であり得る。
前記フリップチップボンディングの制御は、昇温区間、加熱温度維持区間、及び冷却区間のそれぞれで、前記LED基板と前記サブマウント基板とをそれぞれ異なる温度で制御し得る。
5b 第1温度調節部
6a 第2チャック
6b 第2温度調節部
100 マイクロLED
101 溝
102 露出領域
130 LEDセル
131 サファイア基板
132 n型半導体層
133 活性層
134 p型半導体層
140 共通電極パッド(n型電極パッド)
142、152 空洞
150 個別電極パッド(p型電極パッド)
160、250 不動態層
162 第1パッド露出ホール
164 第2パッド露出ホール
200 サブマウント基板
201 基板母材
240 個別電極
252、302 電極露出ホール
260 Cuピラーバンプ
261 UBM(Under Bump Metallurgy)
262 Cuピラー
263 (SnAg)ソルダー(キャップ)
300 感光性PR(Photoresist)
1000 レーザービーム照射ユニット
1100 オプティックガイド
1200 コリメーター
1300 ビーム調節機
1400 集束レンズ
Claims (8)
- サファイア基板上にn型半導体層、活性層、及びp型半導体層を含む多数のLEDセルがマトリックス状に配列されて形成され、前記多数のLEDセルの外郭のn型半導体層の露出領域上にn型電極パッドが形成され、前記多数のLEDセルの各々のp型半導体層にp型電極パッドが形成されたマイクロLEDを準備する段階と、
前記多数のLEDセルのp型電極パッドに対応する多数の個別電極、及び前記n型電極パッドに対応する共通電極が形成され、前記サファイア基板の熱膨張係数よりも小さい熱膨張係数を有するサブマウント基板を準備する段階と、
前記多数の個別電極及び前記共通電極にソルダーバンプを形成する段階と、
前記ソルダーバンプを加熱し、前記マイクロLEDと前記サブマウント基板とをフリップチップボンディングする段階と、を有し、
前記フリップチップボンディングする段階は、昇温区間、加熱温度維持区間、及び冷却区間のそれぞれで、前記サファイア基板と前記サブマウント基板とをそれぞれ異なる温度で制御し、
前記昇温区間において、前記サファイア基板の温度は、常温から第1維持温度まで第1加熱勾配で上昇し、前記サブマウント基板の温度は、常温から第2維持温度まで第2加熱勾配で上昇し、
前記加熱温度維持区間において、前記サファイア基板及び前記サブマウント基板の開始時点及び終了時点は、同じであり、
前記冷却区間において、前記サファイア基板の冷却が完了する時点は、前記サブマウント基板の冷却が完了する時点よりも前であることを特徴とするフリップチップボンディング方法。 - 前記昇温区間において、
前記第2維持温度は、前記第1維持温度よりも高く、
前記第2加熱勾配は、前記第1加熱勾配よりも大きいことを特徴とする請求項1に記載のフリップチップボンディング方法。 - 前記加熱温度維持区間において、
前記サファイア基板の温度は、前記第1維持温度に一定時間維持され、
前記サブマウント基板の温度は、前記第2維持温度に一定時間維持されることを特徴とする請求項1に記載のフリップチップボンディング方法。 - 前記冷却区間において、
前記サファイア基板の温度は、前記第1維持温度から常温まで下降し、
前記サブマウント基板の温度は、前記第2維持温度から常温まで下降することを特徴とする請求項1に記載のフリップチップボンディング方法。 - 前記フリップチップボンディングする段階は、前記マイクロLEDを固定するチャックに備えられた温度調節部で前記サファイア基板の温度を制御することを特徴とする請求項1に記載のフリップチップボンディング方法。
- 前記フリップチップボンディングする段階は、前記サブマウント基板を固定するチャックに備えられた温度調節部で前記サブマウント基板の温度を制御することを特徴とする請求項1に記載のフリップチップボンディング方法。
- 前記多数のLEDセルの各々は、前記サファイア基板上に成長させたn型半導体層、活性層、及びp型半導体層を含むエピ層をエッチングして形成されることを特徴とする請求項1に記載のフリップチップボンディング方法。
- 前記マイクロLEDを準備する段階は、前記多数のLEDセル及び前記n型半導体層の露出領域を全て覆うように不動態層を形成し、前記多数のp型電極パッド及び前記n型電極パッドを露出させるパッド露出ホールを形成する段階を含むことを特徴とする請求項1に記載のフリップチップボンディング方法。
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