TW201820590A - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TW201820590A
TW201820590A TW106127516A TW106127516A TW201820590A TW 201820590 A TW201820590 A TW 201820590A TW 106127516 A TW106127516 A TW 106127516A TW 106127516 A TW106127516 A TW 106127516A TW 201820590 A TW201820590 A TW 201820590A
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Taiwan
Prior art keywords
gate electrode
film
insulating film
region
semiconductor device
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TW106127516A
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English (en)
Chinese (zh)
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山口直
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日商瑞薩電子股份有限公司
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Publication of TW201820590A publication Critical patent/TW201820590A/zh

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW106127516A 2016-08-25 2017-08-15 半導體裝置之製造方法 TW201820590A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016164586A JP6713878B2 (ja) 2016-08-25 2016-08-25 半導体装置の製造方法
JP2016-164586 2016-08-25

Publications (1)

Publication Number Publication Date
TW201820590A true TW201820590A (zh) 2018-06-01

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TW106127516A TW201820590A (zh) 2016-08-25 2017-08-15 半導體裝置之製造方法

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US (1) US10186518B2 (https=)
JP (1) JP6713878B2 (https=)
KR (1) KR20180023831A (https=)
CN (1) CN107785377B (https=)
TW (1) TW201820590A (https=)

Cited By (1)

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TWI709232B (zh) * 2019-03-18 2020-11-01 日商東芝記憶體股份有限公司 半導體裝置及其製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10872898B2 (en) * 2017-07-19 2020-12-22 Cypress Semiconductor Corporation Embedded non-volatile memory device and fabrication method of the same
TWI690061B (zh) * 2019-04-02 2020-04-01 億而得微電子股份有限公司 單閘極多次寫入非揮發性記憶體及其操作方法
JP7200054B2 (ja) * 2019-06-24 2023-01-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2021027096A (ja) * 2019-08-01 2021-02-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP7555801B2 (ja) 2020-11-20 2024-09-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US12018364B2 (en) 2020-12-11 2024-06-25 Applied Materials, Inc. Super-conformal germanium oxide films
US11781218B2 (en) 2020-12-11 2023-10-10 Applied Materials, Inc. Defect free germanium oxide gap fill

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218135A (ja) * 1985-03-23 1986-09-27 Oki Electric Ind Co Ltd シリコン酸化膜の形成方法
US5069747A (en) * 1990-12-21 1991-12-03 Micron Technology, Inc. Creation and removal of temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on exposed, permanent silicon dioxide structures
JPH06349817A (ja) * 1993-06-14 1994-12-22 Kawasaki Steel Corp 半導体装置の製造方法
JP2962250B2 (ja) * 1996-11-12 1999-10-12 日本電気株式会社 半導体記憶装置の製造方法
KR100363839B1 (ko) 1999-12-24 2002-12-06 주식회사 하이닉스반도체 반도체 소자의 층간 절연막 형성 방법
JP2002151664A (ja) * 2000-11-13 2002-05-24 Hitachi Ltd 半導体集積回路装置の製造方法
US7141483B2 (en) * 2002-09-19 2006-11-28 Applied Materials, Inc. Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
JP2006041107A (ja) * 2004-07-26 2006-02-09 Seiko Epson Corp 半導体装置及びその製造方法
TWI311796B (en) * 2005-11-17 2009-07-01 Ememory Technology Inc Semiconductor device and manufacturing method thereof
JP4487266B2 (ja) * 2006-08-30 2010-06-23 エルピーダメモリ株式会社 半導体装置
JP2010182751A (ja) * 2009-02-03 2010-08-19 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法
JP6026914B2 (ja) * 2013-02-12 2016-11-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6297430B2 (ja) * 2014-06-30 2018-03-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI709232B (zh) * 2019-03-18 2020-11-01 日商東芝記憶體股份有限公司 半導體裝置及其製造方法

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