CN107785377B - 制造半导体装置的方法 - Google Patents

制造半导体装置的方法 Download PDF

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CN107785377B
CN107785377B CN201710614700.3A CN201710614700A CN107785377B CN 107785377 B CN107785377 B CN 107785377B CN 201710614700 A CN201710614700 A CN 201710614700A CN 107785377 B CN107785377 B CN 107785377B
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gate electrode
film
insulating film
region
semiconductor substrate
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CN107785377A (zh
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山口直
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Renesas Electronics Corp
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Renesas Electronics Corp
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CN201710614700.3A 2016-08-25 2017-07-26 制造半导体装置的方法 Active CN107785377B (zh)

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JP2016164586A JP6713878B2 (ja) 2016-08-25 2016-08-25 半導体装置の製造方法
JP2016-164586 2016-08-25

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CN107785377B true CN107785377B (zh) 2023-06-16

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