TW201447014A - 在批式反應器中循環氮化鋁沈積 - Google Patents

在批式反應器中循環氮化鋁沈積 Download PDF

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TW201447014A
TW201447014A TW103118903A TW103118903A TW201447014A TW 201447014 A TW201447014 A TW 201447014A TW 103118903 A TW103118903 A TW 103118903A TW 103118903 A TW103118903 A TW 103118903A TW 201447014 A TW201447014 A TW 201447014A
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aluminum nitride
depositing
deposition
aluminum
precursor
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Werner Knaepen
Bert Jongbloed
Dieter Pierreux
Peter Zagwijn
Hessel Sprey
Der Jeugd Cornelius A Van
Blank Marinus Josephus De
Robin Roelofs
Qi Xie
Jan Willem Maes
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Asm Ip Holding Bv
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Abstract

本發明揭露一種沈積氮化鋁的製程。所述製程包括在批式處理室提供多個半導體基板。接著，進行多個沈積循環以使氮化鋁層沈積在基板上，基板在沈積循環期間不暴露於電漿。每一個沈積循環包括：使鋁前驅物脈衝流通到批式處理室中；將鋁前驅物從批式處理室移除；以及，在流通氮前驅物之後及流通鋁前驅物的另一脈衝之前，將氮前驅物從批式處理室移除。所述處理室可為熱壁處理室，且沈積可在小於1托耳的沈積壓力下發生。

Description

在批式反應器中循環氮化鋁沈積
本發明是關於製備半導體裝置，特別是有關於沈積氮化鋁。
氮化鋁(AlN)可以用來形成各種半導體裝置。舉例而言，氮化鋁已越來越常被用作為氮化鎵(GaN)型半導體裝置中的保護層或作為是太陽能電池中的背面場層(back surface field layer)。然而，難以沈積高均勻性的氮化鋁。因此，目前持續需要沈積氮化鋁的製程。
根據一態樣，提供一種沈積氮化鋁薄膜的製程。所述製程包括：提供具有熱壁處理室的批式爐；將多個基板裝載到處理室中；以及並在處理室中進行多個沈積循環。每一循環包括：將基板暴露於鋁前驅物的脈衝；將鋁前驅物從基板上去除；將基板 暴露於氮前驅物的脈衝；以及將氮前驅物從多個基板上去除。至少一些循環是在約300℃到約375℃的沈積溫度下進行。所述鋁前驅物可選自由烷基鋁化合物、烷基取代的氯化鋁化合物以及氫化鋁化合物所組成的群組中。
在一些實施例中，沈積溫度和/或氮前驅物的脈衝時間隨著時間推移而減少。在一些實施例中，在起始組的沈積循環期間，沈積溫度為約350℃±約25℃的第一數值，且其中在後續組的沈積循環期間，沈積溫度為約300℃±約25℃的第二數值。
根據另一態樣，提供沈積氮化鋁的製程。所述製程包括：在批式處理室中提供多個半導體基板；以及藉由進行多個沈積循環在基板上沈積氮化鋁層。每一沈積循環包括：將鋁前驅物脈衝流通到批式處理室中；接著將鋁前驅物從批式處理室移除，接著將氮前驅物脈衝流通到批式處理室中；以及，在流通氮前驅物脈衝之後及流通鋁前驅物的另一脈衝之前，將氮前驅物從批式處理室移除。基板在沈積循環的過程期間不會暴露於電漿。
在一些實施例中，所述處理室為熱壁處理室。在一些實施例中，所沈積的氮化鋁層在基板上的非均勻性為1σ=0.25%或更好。在一些實施例中，沈積壓力可為約100到約700毫托耳(mTorr)。
100‧‧‧製程
110、120、130、140‧‧‧方塊
圖1大致說明根據一些實施例之用於形成AlN膜的製程 的流程圖。
圖2是表示根據一些實施例之所沈積的膜厚度隨著TMA脈衝時間變化的圖表。
圖3是表示根據一些實施例之所沈積的膜厚度隨著所進行的沈積循環數變化的圖表。
圖4是表示根據一些實施例之所沈積的膜厚度隨著NH3脈衝時間變化的圖表。
圖5是表示根據一些實施例之在各種NH3脈衝時間下所沈積的膜厚度隨著所進行的沈積循環數變化的圖表。
圖6是表示根據一些實施例之在各種沈積溫度下所沈積的膜厚度隨著所進行的沈積循環數變化的圖表。
圖7表示根據一些實施例所沈積的AlN膜的均勻性。
氮化鋁膜通常是透過電漿輔助技術沈積在基板上的。然而，近來發現，將基板暴露於電漿時會不利地影響膜層的鈍化性和/或者電漿會損害基板上的裝置。
在「矽上氮化鋁的成核與原子層生長的機制(Mechanism of Nucleation and Atomic Layer Growth of AlN on Si.)」(T.M.Mayer、J.W.Rogers及T.A.Michalske著，Chem.Mater.1991年，第3篇，第641-646頁)中已提供在沈積期間不使用電漿的熱沈積。然而，即使在半導體製程工業中使用最先進的單一晶圓反應器， 在嘗試氮化鋁薄膜的原子層沈積時仍無法在基板上提供均勻的沈積膜。因此，由於製造出的膜均勻性差的不可接受，故這些熱沈積被視為是不成功的。
不受理論的限制下，相信上述原子層沈積的嘗試在基板上的一些部份上產生非自限性(noo-self-limiting)且不受控制的沈積，因而造成基板上的膜厚度具有很大的差異。因此，雖然理想的原子層成長為氮化鋁大致上單層-單層地沈積，但是實際上的沈積似乎包含其中膜成長為非自限性的強力化學氣相沈積組成(strong chemical vapor deposition component)。因此，尤其是跟電漿輔助的沈積可獲得的結果比較來說，熱沈積的可控制性被認為是不好的且對基板上的沈積來說是不適合的。
有利地說，本發明開發出了一種熱氮化鋁沈積製程，即使在沒有使用電漿技術的情蕸下，所述製程仍可在基板上提供高的均勻性。在一些實施例中，所述製程包括：在批式處理室提供多個半導體基板；以及藉由進行多個沈積循環在批次處理室的基板上沈積氮化鋁層(或膜)，且基板在沈積循環期間不暴露於電漿。每一沈積循環包括：將鋁前驅物脈衝流通到批式處理室中，將鋁前驅物從批式處理室移除；接著將氮前驅物脈衝流通到批式處理室中；以及，在流通氮前驅物脈衝之後及流通鋁前驅物的另一脈衝之前，將氮前驅物從批式處理室移除。處理室可為熱壁處理室，且沈積可在沈積壓力為小於大約1托耳、大約50毫托耳到900毫托耳、大約100毫托耳到700毫托耳、或大約150毫托耳到550 毫托耳時進行。在一些實施例中，沈積溫度可為約400℃或更少、約150℃到375℃、約240℃到375℃、或約275℃到375℃。
在不受理論的限制下，相信通常在單一晶圓反應器中所利用的沈積壓力可能會促成鋁前驅物之間的非預期反應，進而在基板上的引起鋁的非自限性沈積。典型的單一晶圓反應器的沈積壓力可能介於1到10托耳之間。根據一些實施例，沈積壓力為約50毫托耳到約900毫托耳、約100毫托耳到約700毫托耳、或約150毫托耳到約550毫托耳，其可減少氮化鋁沈積的非自限性組成。配合相對長的前驅物脈衝時間(例如是3秒或更長)，低的壓力允許前驅物在基板上良好的飽和，同時提供低程度的非自限性沈積。應理解的是，在處理室的壁上經吸附的前驅物或處理室的壁上經不完全反應的沈積物可能對沈積造成不良的影響且可能產生污染物。在不受理論的限制下，相信使用熱壁批式處理室可以減少室壁上的低品質沈積物的量，從而改善沈積在基板上的膜的品質。
有利地說，根據一些實施例所沈積的氮化鋁膜在基板上可以具有優良的均勻性。在一些實施例中，在基板上的膜的非均勻性可達到1σ=1%或更好、1σ=0.5%或更好、或者1σ=0.25%或更好。
接下來將參考圖式，其中相同的元件符號在全文中指稱相同的特徵。
圖1大致說明根據一些實施例之用於形成AlN膜的製程 100的流程圖。製程100可在批式反應器裡的處理室中進行，處理室可容納多個基板，例如25個或更多的基板、或25到150個基板。在一些實施例中，批式處理室是熱壁處理室，其中所述處理室的室壁被主動地加熱到達(例如)製程溫度。如本文所指出，此熱壁處理室的優點為可提供均勻的製程結果。在批式處理室中所處理的基板可為將在其上沈積氮化鋁的任何工件，包括由半導體形成的工件，例如半導體晶圓。
參照圖1，在方塊110中，將多個基板裝載到批式處理室中。所述基板可被加熱到沈積溫度，其為約400℃或更少、約150℃到375℃、約240℃到375℃、或約300℃到375℃。此外，在批式處理室中可建立沈積壓力，沈積壓力為約50毫托耳到約900毫托耳、約100毫托耳到約700毫托耳、或約150毫托耳到約550毫托耳。
在方塊120中，可將基板暴露於鋁前驅物脈衝中的鋁前驅物。在一些實施例中，鋁前驅物到處理室中的流通在脈衝起始時開始且在脈衝停止時結束。在一些實施例中，脈衝時間可為約2秒或更長、約2秒到約20秒、約3秒到約16秒、或約5秒到約10秒。在不受理論的限制下，相信數秒內的脈衝(包括2秒或3秒或更長)可理想地在基板上達成鋁前驅物的高程度自限性的覆蓋。然而，過長的脈衝時間可能會造成個別的鋁前驅物分子與其他鋁前驅物分子之間的反應，造成不想要的非自限性沈積。在一些實施例中，所述鋁前驅物脈衝時間可小於約20秒、或少於約16 秒、或約是7秒。
鋁前驅物包括有機鋁前驅物，例如是烷基鋁化合物、烷基取代氯化鋁化合物、以及烷基取代氫化鋁化合物。有機鋁前驅物的化學式可為AlR3，其中R是選自經取代的、支鏈的、直鏈或環狀的C1-C10烴類。在一些實施例中，0至3個R基團為甲基而其餘的為乙基。在一些實施例中，有機鋁前驅物可以是三甲基鋁(triemethylaluminum；TMA)。在一些實施例中，有機鋁前驅物同時具有鹵配位基和有機配位基(例如AlRxX3-x)，其中x是1到2，且R是有機配位基(例如烷基或烯基)，且X是鹵素(例如氯)。此類的鋁前驅物可為(例如)氯化二甲基鋁((CH3)2AlCl)。在一些實施例中，鋁前驅物是鹵化鋁，例如三氯化鋁(AlCl3)或碘化鋁(AlI3)。
在步驟130中，將鋁前驅物的脈衝停止後，將基板暴露於氮前驅物脈衝中的氮前驅物。氮前驅物的實例包括氨(ammonia)、聯氨(hydrazine)和聯氨的衍生物。在一些實施例中，氮前驅物到處理室中的流通在脈衝起始時開始且在脈衝停止時結束。在一些實施例中，脈衝時間可為約3秒或更長、或約10秒或更長。在一些實施例中，脈衝時間可以是約3秒到約90秒、約3秒到約30秒、或約3秒到約10秒。在不受理論的限制下，相信約3秒到約10秒的脈衝時間可理想地使氮前驅物與鋁前驅物在基板表面上完全反應。更長的脈衝時間可以增加所沈積的膜厚度。
參照圖1，步驟120及步驟130構成沈積循環步驟140。可重複所述沈積循環步驟多次以形成所需厚度的氮化鋁膜。應理 解的是，所述膜可以完全地覆蓋基板、或是可位於在基板上分散的局部區域中，此取決於(例如)鋁前驅物與基板表面上的不同區域的反應性。
儘管為了便於描述而未多做繪示，但應理解的是，循環140可以包括一或多個前驅物移除步驟。舉例而言，在方塊120與方塊130之間，可將鋁前驅物從基板附近移除或去除，例如藉由流通惰性氣體到處理室中而不流通前驅物質和/或藉由排淨(evacuate)處理室以從所述室中移除鋁前驅物。
相似地，在步驟130之後及在將基板再次暴露鋁前驅物之前，可以將氮前驅物從基板的附近移除。此也可藉由(例如)流通惰性氣體到處理室中而不流通前驅物質和/或藉由排淨處理室以從所述室移除氮前驅物。因此，在一些實施例中，沈積循環可包括：●將基板暴露於鋁前驅物脈衝；●將鋁前驅物從處理室移除；●將基板暴露於氮前驅物脈衝；以及●將氮前驅物從處理室移除。
用於鋁及氮前驅物的前驅物移除時間可為相同或不同。在一些實施例中，鋁前驅物的去除時間約是1到7秒，而氮前驅物的去除時間約是7到30秒、或約7到15秒。已發現去除鋁前驅物的時間並對膜的均勻性不會產生強烈的影響，但是去除氮前驅物的時間則對膜的均勻性產生強烈的影響。在一些實施例中，去除氮前驅物的時間是去除鋁前驅物的時間的至少約1.5倍、約2倍、或約 3倍。
如本文所述，可重複沈積循環步驟以形成所需厚度的氮化鋁膜。在一些實施例中，全部的循環可以在相同的條件下進行，例如相同的沈積溫度和/或壓力。在一些其他的實施例中，在第一期間用於進行第一組的一或多個沈積循環的條件可以不同於在第二期間用於進行第二組的一或多個沈積循環的條件。
在一些實施例中，第一組沈積循環的沈積溫度高於第二組沈積循環。在不受理論的限制下，相信氮化鋁膜的沈積速率強烈地取決於用於沈積膜的表面。已發現，氮化鋁膜沈積速率在進行起始組的沈積循環後增加，且相信較低的起始沈積速率是因為有抑制期的存在，一旦在基板上沈積封閉的氮化鋁膜後，抑制期就會消失。已發現，在抑制期期間增高沈積溫度可以增加沈積速率且同時保持高的膜均勻性。在一些實施例中，在第一期間用於進行沈積循環的沈積溫度相較於後續期間用於進行沈積循環的沈積溫度高出至少約25℃、高出至少約25℃到約75℃、或高出至少約25℃到約50℃。在一些實施例中，第一期間的沈積溫度是約350℃±約25℃、或約350℃±約10℃，而第二期間的沈積溫度是約300℃±約25℃、或約300℃±約10℃。在一些實施例中，第一期間可以包括約10次或更多次的沈積循環、約10到約50次的沈積循環、或約20到約40次的沈積循環。
還發現的是，在抑制期過後的沈積速率變得比較不會受氮前驅物的脈衝時間影響。在一些實施例中，氮前驅物脈衝時間 可以隨著時間推移而減少。舉例而言，在第一期間用於進行沈積循環的氮前驅物的脈衝時間可以高於在第二期間(例如是抑制期後的期間)。舉例而言，在第一期間中的氮前驅物的脈衝時間可為約10秒或更長，而第二期間則是落於約3到約10秒之間或約3到約5秒之間。
應理解的是，所沈積的氮化鋁膜可用於在各種應用中。舉例而言，氮化鋁膜可以用作為例如是氮化鎵(GaN)上的保護層。在GaN上使用氮化鋁保護層可以大大地降低界面能態(interface state)。在一些實施例中，在沈積氮化鋁保護膜層後，閘介電質可以由氧化矽(SiO2)、氧化鋯(ZrO)、氧化鉿(HfO2)、氧化鋁(Al2O3)、或這些氧化物任意組合的雙層或三層或奈米疊層沈積而成，這些氧化物可藉由使用基板於前驅物的循環暴露的原子層沈積製程來沈積，例如可將基板在不同的時間點上暴露於不同的前驅物。在一些實施例中，氮化鋁保護薄膜與閘介電質可以在相同的處理室中原位(in-situ)沈積。
實驗例
在A412立式爐中沈積氮化鋁膜，A412立式爐購入於ASM國際公司(ASM International)，公司所在地為荷蘭AP阿美爾凡第克史瓦四街1332號(Versterkerstraat 4,1322 AP Almere,the Netherlands)。所述的立式爐有一個無襯裡的處理室，鋁前驅物及氮前驅物是注入到此處理室中，每一種氣體是透過獨立的多孔注 射器流通。去除氣體(purge gas)可以是透過多孔注射器注入和/或透過「傾印(dump)」注射器注入，「傾印」注射器是一個沒有中間孔洞但接近處理管頂部具有開孔端的注射管。在處理管的底部排出氣體。基板是置放在支架或「船型」結構中，在沈積過程時可使此結構在處理室中旋轉。所述處理室是熱壁處理室。
將三甲基鋁(TMA)用作為鋁前驅物且將氨氣(NH3)用作為氮前驅物。除非本文有另外提出，否則沈積是在350℃下進行，進行70次的循環沈積，施加船型旋轉(boat rotation)，以及進行以下循環步驟： 在去除步驟期間，透過傾印注射器注入5slm的N2。透過多孔注射器流入額外量的氮氣。沒有控制室壓但是對處理室施用最大的泵送(pumping)及排淨(evacuation)，因此室壓是在150到550毫托耳之間。150毫托耳的壓力是在前驅物暴露步驟期間的壓力，而550毫托耳的壓力是在去除步驟期間的壓力。
圖2是表示所沈積的膜厚度隨著TMA脈衝時間變化的圖表，其在350℃的沈積溫度下持續70次的循環。從上述圖表來看，膜厚度並沒有隨著TMA脈衝時間增加而飽和。取而代之的 是，脈衝時間的增加提供了氮化鋁膜厚度的增加。因此，相信氮化鋁沈積製程如同純原子層沈積(ALD)一樣為非自限性的。相對來說，氮化鋁沈積包含沈積速率為每次循環1.25昂(Ang)的自限性組成(空心菱形)以及沈積速率為0.044昂/秒(Ang/s)的非自限性組成(空心三角形)。自限性組成在TMA脈衝時間為3秒或更長時是顯而易見的。對16秒的TMA脈衝時間來說，非自限性組成與自限性組成對所沈積的膜厚度的貢獻大約相等。已發現約7秒的TMA脈衝時間提供良好的沈積速率以及高的均勻性。
圖3是表示所沈積的膜厚度隨著所進行的沈積循環次數變化的圖表。值得注意的是，在起初的30到40次的循環中，有效的沈積速率是相對低的，為0.31昂/循環(Ang/cycle)，且接著，1.25昂/循環的自限性組成完全地擴展，且使得總沈積速率增加到1.56昂/循環。相信低的起始沈積速率是因為氮化鋁的自限性組成受到初始抑制期的影響。
圖4是表示所沈積的膜厚度隨著NH3脈衝時間變化的圖表(在350℃下持續70次循環的沈積)。在圖5的幫助下應當可以理解到，沈積的膜厚度將隨著NH3脈衝時間增加而增加，圖5表示三個晶圓在不同晶圓位置的膜厚度：S15、S65及S115分別是在處理室中的底部、中間及頂部區域中的基板。應理解到的是，圖表中的三角形和菱形實質上重疊，此展現在爐內形成良好均勻性的膜厚度。
圖5是表示在各種NH3脈衝時間下所沈積的膜厚度隨著 所進行的沈積循環數變化的圖表。各種NH3脈衝時間是10、30以及90秒。已發現，自限性組成沈積的抑制期將隨著NH3脈衝時間增加而減少。對90、30以及10秒的NH3脈衝時間來說，抑制期分別為約10次、約30次、約45次的循環。因此，對更長的NH3脈衝時間來說會有更高效率的沈積速率。然而，在抑制期過後，對所有的NH3脈衝時間來說每次循環的沈積速率實質上相等。此表示，即使是對於10秒的NH3脈衝時間來說，也能夠完全得到自限性的沈積。預期到的是，在抑制期過後，3秒的NH3脈衝時間足以達到完全飽和的自限性沈積。
圖6是在不同沈積溫度下所沈積的膜厚度隨著沈積循環次數變化的圖表。大部份的沈積在350℃下進行。在前述的溫度下，100次的循環產生約14奈米的膜厚度。當沈積溫度降低到300℃時，100次的循環產生僅2奈米的膜厚度。然而，當在350℃下進行起初的50次循環且接著繼續在較低的溫度300℃下進行沈積時，觀察到膜厚度僅有稍微地減少到11奈米。據信，抑制期在較低的溫度時為實質上較長的，因此最終的薄膜厚度較低。然而，一旦形成封閉的氮化鋁後，每循環所沈積的膜厚度僅會稍微地取決於沈積溫度。因此，相信表面對前驅物的分解及膜形成是有影響的。這些結果表示用於TMA的沈積溫度的有效範圍為約300℃到約375℃。在溫度在375℃以上時，預期TMA的分解速率變會變得過大而使得沈積難以適當地控制。
圖7表示所沈積的氮化鋁膜的均勻性。此膜的沈積條件 如前述實例所描述者。發現氮化鋁膜非常的均勻，其在基板上的膜的非均勻性為1σ=0.25%。相信良好的均勻性表示沈積強烈受到表面控制。此表面控制通常與自限性的製程有關，而本實例卻具有對所沈積的膜厚度有顯著貢獻的非自限性組成。儘管如此，所述沈積製程仍有利地提供良好的沈積表面控制。
更評估了去除時間(purge time)對薄膜均勻性的影響。就TMA去除步驟而言，所施用的時間是1到7秒且沒有對膜的均勻性造成影響。就NH3去除步驟而言，所施用的去除時間是3到30秒。相較於15秒及30秒的去除時間，在三個最短的去除時間(3、5、以及7秒)中觀察到顯著較高的非均勻性，而去除時間為3秒時的非均勻性最高，且非均勻性會在去除時間為5秒及7秒時逐漸地降低。應理解的是，當NH3去除時間是7秒或更多、且較佳為15秒或更多時，優點是能夠形成高度均勻的氮化鋁膜。
雖然上述實例是以TMA來進行，但是應理解的是其他的有機鋁前驅物將能夠提供類似的有益效果。所述前驅物已在上文中被揭露，且可以包括(例如)具有足夠揮發性且分解溫度與TMA相似的鋁烷基前驅物、或烷基取代鋁氯化物或氫化物。下表提供了前驅物的一些實例。
本技術領域具有通常知識者應理解的是，在不違背本發明的精神及範疇下可對本發明進行各種修改及變化。其它相似的修改和變化都將落入本發明的範疇之內，如所附的申請專利範圍所定義者。
100‧‧‧製程
110、120、130、140‧‧‧方塊

Claims (27)

  1. 一種沈積氮化鋁薄膜的製程，包括：提供批式爐，所述批式爐具有熱壁處理室；將多個基板裝載到所述處理室中；以及在所述處理室中進行多個沈積循環，各所述循環包括：將所述基板暴露於鋁前驅物的脈衝，所述鋁前驅物是選自由烷基鋁化合物、烷基取代氯化鋁化合物、以及烷基取代氫化鋁化合物所組成的群組中；將所述鋁前驅物從所述基板去除；將所述基板暴露於氮前驅物的脈衝；以及將所述氮前驅物從多個所述基板去除，其中至少一些所述循環是在約300℃到約375℃的沈積溫度下進行。
  2. 如申請專利範圍第1項所述的沈積氮化鋁薄膜的製程，其中所述沈積溫度隨著時間推移而降低。
  3. 如申請專利範圍第2項所述的沈積氮化鋁薄膜的製程，其中所述沈積溫度在起始組的所述沈積循環期間為約350℃±約25℃的第一數值，且其中所述沈積溫度在後續組的所述沈積循環期間為約300℃±約25℃的第二數值。
  4. 如申請專利範圍第1項所述的沈積氮化鋁薄膜的製程，其中在所述處理室中的沈積壓力小於1托耳。
  5. 如申請專利範圍第1項所述的沈積氮化鋁薄膜的製程，其 中所述鋁前驅物的所述脈衝的時間為約3秒或更長。
  6. 如申請專利範圍第6項所述的沈積氮化鋁薄膜的製程，其中所述鋁前驅物的所述脈衝的時間為約5秒到約10秒。
  7. 如申請專利範圍第5項所述的沈積氮化鋁薄膜的製程，其中所述氮前驅物的所述脈衝的時間為約3秒或更長。
  8. 如申請專利範圍第7項所述的沈積氮化鋁薄膜的製程，其中所述氮前驅物的所述脈衝的時間為約10秒或更長。
  9. 如申請專利範圍第7項所述的沈積氮化鋁薄膜的製程，其中所述氮前驅物的所述脈衝的時間在第一時段期間是第一數值，並且在第二時段期間減少到第二數值。
  10. 如申請專利範圍第1項所述的沈積氮化鋁薄膜的製程，其中將所述鋁前驅物從所述基板上去除的進行時間為約1秒或更長。
  11. 如申請專利範圍第1項所述的沈積氮化鋁薄膜的製程，其中將所述氮前驅物從所述基板上去除的進行時間為約7秒或更長。
  12. 如申請專利範圍第1項所述的沈積氮化鋁薄膜的製程，其中所述氮前驅物是NH3。
  13. 如申請專利範圍第1項所述的沈積氮化鋁薄膜的製程，其中所述氮前驅物是聯氨。
  14. 一種沈積氮化鋁的製程，包括：在批式處理室提供多個半導體基板；以及 在所述批式處理室中藉由進行多個沈積循環以在所述基板上沈積氮化鋁層，各所述沈積循環包括：流通鋁前驅物脈衝到所述批式處理室中；將所述鋁前驅物從所述批式處理室移除；接著流通氮前驅物脈衝到所述批式處理室中；以及在流通所述氮前驅物之後及流通所述鋁前驅物的另一脈衝之前，將所述氮前驅物從所述批式處理室移除，其中所述基板在所述沈積循環期間不暴露於電漿。
  15. 如申請專利範圍第14項所述的沈積氮化鋁薄膜的製程，其中所述處理室為熱壁處理室。
  16. 如申請專利範圍第15項所述的沈積氮化鋁薄膜的製程，其中用於沈積所述氮化鋁層的沈積壓力為約100毫托耳到約700毫托耳。
  17. 如申請專利範圍第14項所述的沈積氮化鋁薄膜的製程，其中所述氮化鋁層在所述基板上的非均勻性為1σ=0.25%或更好。
  18. 如申請專利範圍第14項所述的沈積氮化鋁薄膜的製程，其中起始期間用於進行多個所述沈積循環的沈積溫度相較於後續期間用於進行多個所述沈積循環的沈積溫度而言高出至少約25℃。
  19. 如申請專利範圍第18項所述的沈積氮化鋁薄膜的製程，其中所述起始期間的所述沈積溫度相較於所述後續期間的所述沈積溫度而言高出至少約50℃。
  20. 如申請專利範圍第18項所述的沈積氮化鋁薄膜的製程，其中在所述起始期間的所述沈積溫度為約350℃±約25℃，且其中在所述後續期間的所述沈積溫度為約300℃±約25℃。
  21. 如申請專利範圍第14項所述的沈積氮化鋁薄膜的製程，其中所述氮前驅物的去除時間是所述鋁前驅物的去除時間的至少約1.5倍。
  22. 如申請專利範圍第14項所述的沈積氮化鋁薄膜的製程，其中移除所述鋁前驅物以及移除所述氮前驅物包括排淨所述批式處理室。
  23. 如申請專利範圍第14項所述的沈積氮化鋁薄膜的製程，其中所述半導體基板包括氮化鎵，其中所述氮化鋁層是沈積在所述氮化鎵上。
  24. 如申請專利範圍第23項所述的沈積氮化鋁薄膜的製程，更包括：在所述氮化鋁層上形成閘介電質。
  25. 如申請專利範圍第24項所述的沈積氮化鋁薄膜的製程，其中所述閘介電質包括氧化矽(SiO2)、氧化鋯(ZrO2)、氧化鉿(HfO2)、氧化鋁(Al2O3)或這些物質的組合物。
  26. 如申請專利範圍第25項所述的沈積氮化鋁薄膜的製程，其中所述組合物是雙層或三層或奈米疊層，而所述雙層或三層或奈米疊層中的各膜層包括氧化矽(SiO2)、氧化鋯(ZrO2)、氧化鉿(HfO2)或氧化鋁(Al2O3)中的一者。
  27. 如申請專利範圍第24項所述的沈積氮化鋁薄膜的製程，其中所述閘介電質是在所述處理室中原位形成的。
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