TW201417150A - 磊晶晶圓 - Google Patents

磊晶晶圓 Download PDF

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Publication number
TW201417150A
TW201417150A TW102138097A TW102138097A TW201417150A TW 201417150 A TW201417150 A TW 201417150A TW 102138097 A TW102138097 A TW 102138097A TW 102138097 A TW102138097 A TW 102138097A TW 201417150 A TW201417150 A TW 201417150A
Authority
TW
Taiwan
Prior art keywords
epitaxial layer
epitaxial
growth
substrate
layer
Prior art date
Application number
TW102138097A
Other languages
English (en)
Chinese (zh)
Inventor
姜石民
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120122006A external-priority patent/KR20140055337A/ko
Priority claimed from KR1020120122004A external-priority patent/KR20140055335A/ko
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201417150A publication Critical patent/TW201417150A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW102138097A 2012-10-31 2013-10-22 磊晶晶圓 TW201417150A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120122006A KR20140055337A (ko) 2012-10-31 2012-10-31 에피택셜 웨이퍼 및 그 제조 방법
KR1020120122004A KR20140055335A (ko) 2012-10-31 2012-10-31 에피택셜 웨이퍼 및 그 제조 방법

Publications (1)

Publication Number Publication Date
TW201417150A true TW201417150A (zh) 2014-05-01

Family

ID=49488509

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102138097A TW201417150A (zh) 2012-10-31 2013-10-22 磊晶晶圓

Country Status (5)

Country Link
US (1) US20140117382A1 (enExample)
EP (1) EP2728610B1 (enExample)
JP (1) JP2014093525A (enExample)
CN (1) CN103794642A (enExample)
TW (1) TW201417150A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014084550A1 (ko) * 2012-11-30 2014-06-05 엘지이노텍 주식회사 에피택셜 웨이퍼, 이를 이용한 스위치 소자 및 발광 소자
JP6796407B2 (ja) * 2016-06-27 2020-12-09 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
JP6762484B2 (ja) * 2017-01-10 2020-09-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
CN107829135A (zh) * 2017-10-24 2018-03-23 瀚天天成电子科技（厦门）有限公司 一种高质量碳化硅外延生长工艺
CN112136203B (zh) * 2018-05-23 2024-04-09 三菱电机株式会社 SiC外延基板的制造方法
CN111029250B (zh) * 2019-12-09 2022-07-22 中国电子科技集团公司第五十五研究所 一种实现SiC外延曲线形掺杂分布的方法
CN112670165B (zh) * 2020-12-24 2022-11-01 南京百识电子科技有限公司 一种碳化硅外延底层的生长方法
JP7686539B2 (ja) * 2021-11-08 2025-06-02 株式会社ニューフレアテクノロジー 気相成長方法及び気相成長装置
CN114678419A (zh) * 2022-05-27 2022-06-28 深圳平创半导体有限公司 半导体器件及其制作方法、功率开关器件和功率放大器件

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JP4185215B2 (ja) * 1999-05-07 2008-11-26 弘之 松波 ＳｉＣウエハ、ＳｉＣ半導体デバイス、および、ＳｉＣウエハの製造方法
JP3854508B2 (ja) * 1999-09-07 2006-12-06 株式会社シクスオン ＳｉＣウエハ、ＳｉＣ半導体デバイス、およびＳｉＣウエハの製造方法
EP1306890A2 (en) * 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate and device comprising SiC and method for fabricating the same
US6849874B2 (en) * 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
JP4224253B2 (ja) * 2002-04-24 2009-02-12 パナソニック株式会社 半導体装置及びその製造方法
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
JP2006156687A (ja) * 2004-11-29 2006-06-15 Sumco Corp エピタキシャルウェーハ
KR100793607B1 (ko) * 2006-06-27 2008-01-10 매그나칩 반도체 유한회사 에피텍셜 실리콘 웨이퍼 및 그 제조방법
JP4937685B2 (ja) * 2006-09-21 2012-05-23 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP2009088223A (ja) * 2007-09-28 2009-04-23 Hitachi Cable Ltd 炭化珪素半導体基板およびそれを用いた炭化珪素半導体装置
JP2009130266A (ja) * 2007-11-27 2009-06-11 Toshiba Corp 半導体基板および半導体装置、半導体装置の製造方法
JP5458509B2 (ja) * 2008-06-04 2014-04-02 日立金属株式会社 炭化珪素半導体基板
US8294507B2 (en) * 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
CN101673673B (zh) * 2009-09-22 2013-02-27 上海宏力半导体制造有限公司 外延片形成方法及使用该方法形成的外延片
JP4887418B2 (ja) * 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
JP2011091424A (ja) * 2010-12-17 2011-05-06 Mitsubishi Electric Corp 半導体装置
WO2013107508A1 (en) * 2012-01-18 2013-07-25 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
US8860040B2 (en) * 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
TW201417149A (zh) * 2012-10-31 2014-05-01 Ｌｇ伊諾特股份有限公司 磊晶晶圓
US9793355B2 (en) * 2012-11-30 2017-10-17 Lg Innotek Co., Ltd. Epitaxial wafer and switch element and light-emitting element using same

Also Published As

Publication number Publication date
CN103794642A (zh) 2014-05-14
EP2728610B1 (en) 2020-03-18
US20140117382A1 (en) 2014-05-01
EP2728610A1 (en) 2014-05-07
JP2014093525A (ja) 2014-05-19

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