TW201251515A - Microwave irradiation apparatus - Google Patents

Microwave irradiation apparatus Download PDF

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Publication number
TW201251515A
TW201251515A TW101105730A TW101105730A TW201251515A TW 201251515 A TW201251515 A TW 201251515A TW 101105730 A TW101105730 A TW 101105730A TW 101105730 A TW101105730 A TW 101105730A TW 201251515 A TW201251515 A TW 201251515A
Authority
TW
Taiwan
Prior art keywords
gas
microwave
processed
microwave irradiation
processing
Prior art date
Application number
TW101105730A
Other languages
English (en)
Chinese (zh)
Inventor
Shigeru Kasai
Ryoji Yamazaki
Mitsutoshi Ashida
Yuji Obata
Sumi Tanaka
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201251515A publication Critical patent/TW201251515A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/80—Apparatus for specific applications
    • H05B6/806—Apparatus for specific applications for laboratory use

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Clinical Laboratory Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW101105730A 2011-02-23 2012-02-22 Microwave irradiation apparatus TW201251515A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011037396 2011-02-23
JP2011192069A JP5982758B2 (ja) 2011-02-23 2011-09-02 マイクロ波照射装置

Publications (1)

Publication Number Publication Date
TW201251515A true TW201251515A (en) 2012-12-16

Family

ID=46651903

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101105730A TW201251515A (en) 2011-02-23 2012-02-22 Microwave irradiation apparatus

Country Status (5)

Country Link
US (1) US9224623B2 (enExample)
JP (1) JP5982758B2 (enExample)
KR (1) KR101332252B1 (enExample)
CN (1) CN102651923A (enExample)
TW (1) TW201251515A (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048270B2 (en) * 2007-03-08 2015-06-02 Joseph M. Wander Apparatus and method for heating semiconductor wafers via microwaves
JP2014056806A (ja) * 2012-02-27 2014-03-27 Tokyo Electron Ltd マイクロ波加熱処理装置および処理方法
CN103389156A (zh) * 2012-05-08 2013-11-13 全亿大科技（佛山）有限公司 发光二极管检测量具
JP5738814B2 (ja) 2012-09-12 2015-06-24 株式会社東芝 マイクロ波アニール装置及び半導体装置の製造方法
US9750091B2 (en) * 2012-10-15 2017-08-29 Applied Materials, Inc. Apparatus and method for heat treatment of coatings on substrates
JP2014090058A (ja) * 2012-10-30 2014-05-15 Tokyo Electron Ltd マイクロ波加熱処理装置および処理方法
CN103792474A (zh) * 2012-11-02 2014-05-14 全亿大科技（佛山）有限公司 发光二极管检测量具
CN103008203B (zh) * 2012-12-13 2015-07-15 京东方科技集团股份有限公司 一种膜固化装置
WO2015037004A1 (en) * 2013-09-12 2015-03-19 Goji Limited Temperature measurement arrangement
JP2015103726A (ja) * 2013-11-27 2015-06-04 東京エレクトロン株式会社 マイクロ波加熱処理装置及びマイクロ波加熱処理方法
JP2015187955A (ja) * 2014-03-27 2015-10-29 日本碍子株式会社 マイクロ波照射方法
JP6390153B2 (ja) * 2014-04-30 2018-09-19 富士電機株式会社 熱処理装置
KR101563495B1 (ko) * 2014-07-31 2015-10-27 한국에너지기술연구원 광-전자적 측정 시에 샘플의 온도를 제어하는 장치 및 이를 이용한 태양전지 측정 장치
JP6435135B2 (ja) * 2014-08-26 2018-12-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10403880B2 (en) * 2015-09-11 2019-09-03 Iftikhar Ahmad Apparatus and method for processing battery electrodes
JP6731471B2 (ja) * 2016-03-01 2020-07-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体
US11104502B2 (en) * 2016-03-01 2021-08-31 Jeffrey S. Melcher Multi-function compact appliance and methods for a food or item in a container with a container storage technology
CN108660513A (zh) * 2017-03-28 2018-10-16 上海新昇半导体科技有限公司 一种减少晶片缺陷的设备及方法
KR102404061B1 (ko) * 2017-11-16 2022-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
KR102538177B1 (ko) 2017-11-16 2023-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
US10747968B2 (en) 2017-11-22 2020-08-18 Jeffrey S. Melcher Wireless device and selective user control and management of a wireless device and data
JP7161854B2 (ja) * 2018-03-05 2022-10-27 東京エレクトロン株式会社 検査装置
WO2019180966A1 (ja) * 2018-03-23 2019-09-26 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
WO2019186655A1 (ja) * 2018-03-26 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
WO2019226341A1 (en) * 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
JP7338441B2 (ja) * 2019-12-13 2023-09-05 ウシオ電機株式会社 光加熱装置
JP2024167450A (ja) * 2021-09-24 2024-12-04 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035992Y2 (ja) * 1980-11-11 1985-10-25 株式会社東芝 高周波加熱装置
JPH0752749B2 (ja) * 1986-02-19 1995-06-05 富士通株式会社 ウエハ−保持機構
JPH07114188B2 (ja) * 1988-02-25 1995-12-06 株式会社東芝 半導体基板の熱処理方法及びそれに用いる熱処理装置
JPH0536641A (ja) * 1991-08-01 1993-02-12 Mitsubishi Electric Corp 半導体製造装置
JPH08139084A (ja) * 1994-11-04 1996-05-31 Kokusai Electric Co Ltd 基板加熱装置
JPH11243086A (ja) * 1998-02-24 1999-09-07 Sony Corp 枚葉式ｃｖｄ装置
JP4053173B2 (ja) * 1999-03-29 2008-02-27 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び方法
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
JP3063761B2 (ja) * 1999-05-31 2000-07-12 株式会社日立製作所 プラズマ処理方法及び装置
KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
US7037797B1 (en) * 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
JP3912208B2 (ja) * 2002-02-28 2007-05-09 東京エレクトロン株式会社 熱処理装置
JP2004296625A (ja) * 2003-03-26 2004-10-21 Dainippon Screen Mfg Co Ltd 基板処理装置、熱処理装置および熱処理方法
JP3718688B2 (ja) * 2003-06-17 2005-11-24 東京エレクトロン株式会社 加熱装置
JPWO2005045913A1 (ja) * 2003-11-05 2007-05-24 大見　忠弘 プラズマ処理装置
WO2007083358A1 (ja) 2006-01-17 2007-07-26 Dainippon Screen Mfg. Co., Ltd. 基板処理装置および基板処理方法
US8277569B2 (en) 2004-07-01 2012-10-02 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus and substrate treating method
US7436645B2 (en) 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
JP2006173445A (ja) * 2004-12-17 2006-06-29 Hitachi High-Technologies Corp 荷電粒子線装置
CN101147244B (zh) * 2005-07-28 2010-05-19 东京毅力科创株式会社 基板处理方法和基板处理装置
US20070167029A1 (en) 2005-11-11 2007-07-19 Kowalski Jeffrey M Thermal processing system, components, and methods
US7589028B1 (en) * 2005-11-15 2009-09-15 Novellus Systems, Inc. Hydroxyl bond removal and film densification method for oxide films using microwave post treatment
JP2007258286A (ja) * 2006-03-22 2007-10-04 Tokyo Electron Ltd 熱処理装置、熱処理方法及び記憶媒体
JP5045000B2 (ja) 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
WO2008081723A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
JP5130761B2 (ja) 2007-03-23 2013-01-30 東京エレクトロン株式会社 載置台構造及び処理装置
US7947570B2 (en) * 2008-01-16 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and manufacturing apparatus of semiconductor substrate
JP2010129790A (ja) 2008-11-27 2010-06-10 Tokyo Electron Ltd 成膜方法
JP4780202B2 (ja) * 2009-02-05 2011-09-28 パナソニック株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
KR20120096892A (ko) 2012-08-31
US20120211486A1 (en) 2012-08-23
JP2012191158A (ja) 2012-10-04
CN102651923A (zh) 2012-08-29
US9224623B2 (en) 2015-12-29
JP5982758B2 (ja) 2016-08-31
KR101332252B1 (ko) 2013-11-22

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