CN102651923A - 微波照射装置 - Google Patents

微波照射装置 Download PDF

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Publication number
CN102651923A
CN102651923A CN2012100445966A CN201210044596A CN102651923A CN 102651923 A CN102651923 A CN 102651923A CN 2012100445966 A CN2012100445966 A CN 2012100445966A CN 201210044596 A CN201210044596 A CN 201210044596A CN 102651923 A CN102651923 A CN 102651923A
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CN
China
Prior art keywords
gas
microwave
handled object
microwave applicator
container handling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012100445966A
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English (en)
Chinese (zh)
Inventor
河西繁
山崎良二
芦田光利
小畑雄治
田中澄
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN102651923A publication Critical patent/CN102651923A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/80—Apparatus for specific applications
    • H05B6/806—Apparatus for specific applications for laboratory use

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Clinical Laboratory Science (AREA)
  • Toxicology (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN2012100445966A 2011-02-23 2012-02-23 微波照射装置 Pending CN102651923A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011-037396 2011-02-23
JP2011037396 2011-02-23
JP2011192069A JP5982758B2 (ja) 2011-02-23 2011-09-02 マイクロ波照射装置
JP2011-192069 2011-09-02

Publications (1)

Publication Number Publication Date
CN102651923A true CN102651923A (zh) 2012-08-29

Family

ID=46651903

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012100445966A Pending CN102651923A (zh) 2011-02-23 2012-02-23 微波照射装置

Country Status (5)

Country Link
US (1) US9224623B2 (enExample)
JP (1) JP5982758B2 (enExample)
KR (1) KR101332252B1 (enExample)
CN (1) CN102651923A (enExample)
TW (1) TW201251515A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103008203A (zh) * 2012-12-13 2013-04-03 京东方科技集团股份有限公司 一种膜固化装置
CN108660513A (zh) * 2017-03-28 2018-10-16 上海新昇半导体科技有限公司 一种减少晶片缺陷的设备及方法

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US9048270B2 (en) * 2007-03-08 2015-06-02 Joseph M. Wander Apparatus and method for heating semiconductor wafers via microwaves
JP2014056806A (ja) * 2012-02-27 2014-03-27 Tokyo Electron Ltd マイクロ波加熱処理装置および処理方法
CN103389156A (zh) * 2012-05-08 2013-11-13 全亿大科技（佛山）有限公司 发光二极管检测量具
JP5738814B2 (ja) 2012-09-12 2015-06-24 株式会社東芝 マイクロ波アニール装置及び半導体装置の製造方法
US9750091B2 (en) * 2012-10-15 2017-08-29 Applied Materials, Inc. Apparatus and method for heat treatment of coatings on substrates
JP2014090058A (ja) * 2012-10-30 2014-05-15 Tokyo Electron Ltd マイクロ波加熱処理装置および処理方法
CN103792474A (zh) * 2012-11-02 2014-05-14 全亿大科技（佛山）有限公司 发光二极管检测量具
WO2015037004A1 (en) * 2013-09-12 2015-03-19 Goji Limited Temperature measurement arrangement
JP2015103726A (ja) * 2013-11-27 2015-06-04 東京エレクトロン株式会社 マイクロ波加熱処理装置及びマイクロ波加熱処理方法
JP2015187955A (ja) * 2014-03-27 2015-10-29 日本碍子株式会社 マイクロ波照射方法
JP6390153B2 (ja) * 2014-04-30 2018-09-19 富士電機株式会社 熱処理装置
KR101563495B1 (ko) * 2014-07-31 2015-10-27 한국에너지기술연구원 광-전자적 측정 시에 샘플의 온도를 제어하는 장치 및 이를 이용한 태양전지 측정 장치
JP6435135B2 (ja) * 2014-08-26 2018-12-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10403880B2 (en) * 2015-09-11 2019-09-03 Iftikhar Ahmad Apparatus and method for processing battery electrodes
JP6731471B2 (ja) * 2016-03-01 2020-07-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体
US11104502B2 (en) * 2016-03-01 2021-08-31 Jeffrey S. Melcher Multi-function compact appliance and methods for a food or item in a container with a container storage technology
KR102404061B1 (ko) * 2017-11-16 2022-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
KR102538177B1 (ko) 2017-11-16 2023-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
US10747968B2 (en) 2017-11-22 2020-08-18 Jeffrey S. Melcher Wireless device and selective user control and management of a wireless device and data
JP7161854B2 (ja) * 2018-03-05 2022-10-27 東京エレクトロン株式会社 検査装置
WO2019180966A1 (ja) * 2018-03-23 2019-09-26 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
WO2019186655A1 (ja) * 2018-03-26 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
WO2019226341A1 (en) * 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
JP7338441B2 (ja) * 2019-12-13 2023-09-05 ウシオ電機株式会社 光加熱装置
JP2024167450A (ja) * 2021-09-24 2024-12-04 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム

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TW200503114A (en) * 2003-06-17 2005-01-16 Tokyo Electron Ltd Single-substrate heat-processing apparatus for semiconductor processing system
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CN1945807A (zh) * 2004-10-07 2007-04-11 应用材料公司 控制衬底温度的装置
CN101147244A (zh) * 2005-07-28 2008-03-19 东京毅力科创株式会社 基板处理方法和基板处理装置
CN101361169A (zh) * 2006-01-17 2009-02-04 大日本网屏制造株式会社 基板处理装置以及基板处理方法
CN101365823A (zh) * 2006-06-20 2009-02-11 东京毅力科创株式会社 成膜装置和成膜方法
CN101416276A (zh) * 2005-11-11 2009-04-22 Dsg科技公司 热处理系统、部件和方法
CN101641768A (zh) * 2007-03-23 2010-02-03 东京毅力科创株式会社 载置台结构和使用它的处理装置

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US6736930B1 (en) * 1999-03-29 2004-05-18 Tokyo Electron Limited Microwave plasma processing apparatus for controlling a temperature of a wavelength reducing member
CN1618118A (zh) * 2002-02-28 2005-05-18 东京毅力科创株式会社 热处理装置
TW200503114A (en) * 2003-06-17 2005-01-16 Tokyo Electron Ltd Single-substrate heat-processing apparatus for semiconductor processing system
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CN101416276A (zh) * 2005-11-11 2009-04-22 Dsg科技公司 热处理系统、部件和方法
CN101361169A (zh) * 2006-01-17 2009-02-04 大日本网屏制造株式会社 基板处理装置以及基板处理方法
CN101365823A (zh) * 2006-06-20 2009-02-11 东京毅力科创株式会社 成膜装置和成膜方法
CN101641768A (zh) * 2007-03-23 2010-02-03 东京毅力科创株式会社 载置台结构和使用它的处理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103008203A (zh) * 2012-12-13 2013-04-03 京东方科技集团股份有限公司 一种膜固化装置
CN108660513A (zh) * 2017-03-28 2018-10-16 上海新昇半导体科技有限公司 一种减少晶片缺陷的设备及方法

Also Published As

Publication number Publication date
KR20120096892A (ko) 2012-08-31
TW201251515A (en) 2012-12-16
US20120211486A1 (en) 2012-08-23
JP2012191158A (ja) 2012-10-04
US9224623B2 (en) 2015-12-29
JP5982758B2 (ja) 2016-08-31
KR101332252B1 (ko) 2013-11-22

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Application publication date: 20120829