KR101332252B1 - 마이크로파 조사 장치 - Google Patents

마이크로파 조사 장치 Download PDF

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KR101332252B1
KR101332252B1 KR1020120017275A KR20120017275A KR101332252B1 KR 101332252 B1 KR101332252 B1 KR 101332252B1 KR 1020120017275 A KR1020120017275 A KR 1020120017275A KR 20120017275 A KR20120017275 A KR 20120017275A KR 101332252 B1 KR101332252 B1 KR 101332252B1
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gas
microwave
processed
processing
microwave irradiation
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KR20120096892A (ko
Inventor
시게루 가사이
료지 야마자키
미츠토시 아시다
유지 오바타
스미 타나카
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/80—Apparatus for specific applications
    • H05B6/806—Apparatus for specific applications for laboratory use

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Clinical Laboratory Science (AREA)
  • Toxicology (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020120017275A 2011-02-23 2012-02-21 마이크로파 조사 장치 Active KR101332252B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2011-037396 2011-02-23
JP2011037396 2011-02-23
JP2011192069A JP5982758B2 (ja) 2011-02-23 2011-09-02 マイクロ波照射装置
JPJP-P-2011-192069 2011-09-02

Publications (2)

Publication Number Publication Date
KR20120096892A KR20120096892A (ko) 2012-08-31
KR101332252B1 true KR101332252B1 (ko) 2013-11-22

Family

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KR1020120017275A Active KR101332252B1 (ko) 2011-02-23 2012-02-21 마이크로파 조사 장치

Country Status (5)

Country Link
US (1) US9224623B2 (enExample)
JP (1) JP5982758B2 (enExample)
KR (1) KR101332252B1 (enExample)
CN (1) CN102651923A (enExample)
TW (1) TW201251515A (enExample)

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JP2014056806A (ja) * 2012-02-27 2014-03-27 Tokyo Electron Ltd マイクロ波加熱処理装置および処理方法
CN103389156A (zh) * 2012-05-08 2013-11-13 全亿大科技（佛山）有限公司 发光二极管检测量具
JP5738814B2 (ja) 2012-09-12 2015-06-24 株式会社東芝 マイクロ波アニール装置及び半導体装置の製造方法
US9750091B2 (en) * 2012-10-15 2017-08-29 Applied Materials, Inc. Apparatus and method for heat treatment of coatings on substrates
JP2014090058A (ja) * 2012-10-30 2014-05-15 Tokyo Electron Ltd マイクロ波加熱処理装置および処理方法
CN103792474A (zh) * 2012-11-02 2014-05-14 全亿大科技（佛山）有限公司 发光二极管检测量具
CN103008203B (zh) * 2012-12-13 2015-07-15 京东方科技集团股份有限公司 一种膜固化装置
WO2015037004A1 (en) * 2013-09-12 2015-03-19 Goji Limited Temperature measurement arrangement
JP2015103726A (ja) * 2013-11-27 2015-06-04 東京エレクトロン株式会社 マイクロ波加熱処理装置及びマイクロ波加熱処理方法
JP2015187955A (ja) * 2014-03-27 2015-10-29 日本碍子株式会社 マイクロ波照射方法
JP6390153B2 (ja) * 2014-04-30 2018-09-19 富士電機株式会社 熱処理装置
KR101563495B1 (ko) * 2014-07-31 2015-10-27 한국에너지기술연구원 광-전자적 측정 시에 샘플의 온도를 제어하는 장치 및 이를 이용한 태양전지 측정 장치
JP6435135B2 (ja) * 2014-08-26 2018-12-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10403880B2 (en) * 2015-09-11 2019-09-03 Iftikhar Ahmad Apparatus and method for processing battery electrodes
JP6731471B2 (ja) * 2016-03-01 2020-07-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体
US11104502B2 (en) * 2016-03-01 2021-08-31 Jeffrey S. Melcher Multi-function compact appliance and methods for a food or item in a container with a container storage technology
CN108660513A (zh) * 2017-03-28 2018-10-16 上海新昇半导体科技有限公司 一种减少晶片缺陷的设备及方法
KR102404061B1 (ko) * 2017-11-16 2022-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
KR102538177B1 (ko) 2017-11-16 2023-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
US10747968B2 (en) 2017-11-22 2020-08-18 Jeffrey S. Melcher Wireless device and selective user control and management of a wireless device and data
JP7161854B2 (ja) * 2018-03-05 2022-10-27 東京エレクトロン株式会社 検査装置
WO2019180966A1 (ja) * 2018-03-23 2019-09-26 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
WO2019186655A1 (ja) * 2018-03-26 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
WO2019226341A1 (en) * 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
JP7338441B2 (ja) * 2019-12-13 2023-09-05 ウシオ電機株式会社 光加熱装置
JP2024167450A (ja) * 2021-09-24 2024-12-04 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム

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KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
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KR20090125127A (ko) * 2007-03-23 2009-12-03 도쿄엘렉트론가부시키가이샤 탑재대 구조 및 이것을 이용한 처리 장치

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KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
KR20060017768A (ko) * 2003-06-17 2006-02-27 도쿄 엘렉트론 가부시키가이샤 반도체 처리 시스템용 낱장식 열처리 장치
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Also Published As

Publication number Publication date
KR20120096892A (ko) 2012-08-31
TW201251515A (en) 2012-12-16
US20120211486A1 (en) 2012-08-23
JP2012191158A (ja) 2012-10-04
CN102651923A (zh) 2012-08-29
US9224623B2 (en) 2015-12-29
JP5982758B2 (ja) 2016-08-31

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