TW201007855A - Method for manufacturing semiconductor device and semiconductor device - Google Patents

Method for manufacturing semiconductor device and semiconductor device Download PDF

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Publication number
TW201007855A
TW201007855A TW098118688A TW98118688A TW201007855A TW 201007855 A TW201007855 A TW 201007855A TW 098118688 A TW098118688 A TW 098118688A TW 98118688 A TW98118688 A TW 98118688A TW 201007855 A TW201007855 A TW 201007855A
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TW
Taiwan
Prior art keywords
semiconductor device
resin composition
manufacturing
thermosetting resin
paste
Prior art date
Application number
TW098118688A
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English (en)
Inventor
Satoru Katsurayama
Original Assignee
Sumitomo Bakelite Co
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Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of TW201007855A publication Critical patent/TW201007855A/zh

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    • H—ELECTRICITY
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Description

201007855 六、發明說明： 【發明所屬之技術領域】 本發明係關於半導體裝置之製造方法及半導體裝置。 【先前技術】 近年來，隨著個人電腦和行動電話的小型化、薄型化、高 性此化，使彳·^半導體封裝顯著多樣化，特別為了加速電信號 的傳達速度’以㈣凸塊等之凸塊而將半導體元件予以面連 接的安裝方法’已進行多樣化。作為此類安裝方法，為了進 一步加速電信號的傳達’乃檢討使用金屬凸塊予以垂直連接 的方法。 另一方面，已發展出半導體元件之佈線設計的狹窄間距 化，而為了維持此特性，使得半導體元件的構造亦複雜化， 進而使半導體元件本身變脆。 又’由於目前環境問題的傾向，凸塊所使用的金屬本身亦 受到無鉛化等之變化，保護此凸塊亦變得困難。 因此’關於此類凸塊連接所使用的密封材（下部填充材）， 其要求特性亦變為嚴格’使凸塊保護及晶片保護兩相成立係 為必須條件。為了保護凸塊，下部填充材以高彈性模數為 佳’為了保護晶片（減低晶片的彎曲），下部填充材以低彈性 模數為佳。即，對於凸塊保護和晶片保護，對下部填充材係 要求相反之特性。為了解決此類問題，已檢討尋求下部填充 材的物性平衡(例如，參照專利文獻1及2)。 098118688 4 201007855 但是，由於半導體封裝的複雜化、 下部填充㈣触钱，料半導料㈣==== 限=前狀況為不得不將構造本身再設計，或者為了達成 间可罪性，而採取延遲無鉛化的方法。 專利文獻1: 專利文獻2 : 【發明内容】 日本專利特開平^如別號公報 日本專利_平1G，2G4259號公報 •本發明為在於提供保護凸塊之同時，藉由減低發生弯曲而 可保護半導體元件之半導體裝置的製造方法。 此類目的係藉由下述(1)〜(18)記载之本發明而達成。 -⑴-種半導體裝置之製造方法，其特徵為具有： 在基板或半導體元件之至少一者，塗佈具有助溶活性之膏 狀熱硬化性樹脂組成物的塗佈步驟； 將上述基板和上述半導體元件透過上料狀熱硬化性樹 脂組成物予以電性接合的接合步驟； 將上述膏狀熱硬化性樹脂組成物加熱硬化的硬化步驟；和 在上述硬化步驟後，以lorc/hour]以上、50rc/hour]以下 之冷卻速度予以冷卻的冷卻步驟。 (2)如（1)中記載之半導體裝置之製造方法，其中，於上述 硬化步驟中，將上述膏狀熱硬化性樹脂組成物之硬化溫度定 為 Tc[°C]時， 上述冷卻步驟為以上述冷卻速度冷卻至以下、 098118688 5 201007855 (Tc-90)[°C]以上之溫度範圍。 (3) 如（2)中記載之半導體裝置之製造方法，其中，將上述 硬化溫度(Tc)定為150[t：]時，上述冷卻步驟為以上述冷卻 速度冷卻至150°C以下、60°C以上之溫度範圍。 (4) 如（2)中記載之半導體裝置之製造方法，其中，於未滿 (Tc-90)[°C]之溫度範圍中，以 60[°C/hour]以上、12〇pC/hour] 以下之冷卻速度冷卻。 (5) 如（1)中記載之半導體裝置之製造方法，其中，於25°c 以上、玻璃轉移溫度(Tg)以下之區域中，上述基板於厚度方 向的線膨脹係數（α 1)為20ppm以下。 (6) 如（1)中記載之半導體裝置之製造方法，其中，於25t 以上、玻璃轉移溫度(Tg)以下之區域中，上述基板於厚度方 向的線膨脹係數（α 1)為5ppm以上。 (7) 如（1)中記載之半導體裝置之製造方法，上述硬化步驟 後之上述膏狀熱硬化性樹脂組成物之硬化物的玻璃轉移溫 度為50°C以上、15〇。〇以下。 (8) 如（2)中記載之半導體裝置之製造方法，上述硬化步驟 後之上述膏狀熱硬化性樹脂組成物之硬化物的玻璃轉移溫 度為50°C以上、15〇。(：以下。 (9) 如（8)中記載之半導體裝置之製造方法，其中，上述冷 卻步驟為以上述冷卻速度冷卻至TcpC]以下、（上述膏狀熱 硬化性樹脂組成物之硬化物的上述玻璃轉移溫度-20)fc]以 098118688 6 201007855 上之溫度範圍。 (ίο)如（1)中記載之半導體裝置之製造方法，其中，25。〇以 上、玻璃轉移溫度(Tg)以下之區域中，上述硬化步驟後之上 述膏狀熱硬化性樹脂組成物之硬化物的線膨脹係數為 5ppm/°C以上 ' ⑼卯瓜/充以下。 (11)如（1)中記載之半導體裝置之製造方法，其中，於上述 冷卻步驟中，上述冷卻速度為25pc/h〇ur]以下。 鲁（12)如⑴中記載之半導體裝置之製造方法，其中，使用具 有第1導電部之上述基板和具有第2導電部之上述半導體元 件， 上述接合步驟為以上述膏狀熱硬化性樹脂組成物覆蓋之 狀態’以使上述第!導電部與上述第2導電部進行銲錫連接 之方式，將上述基板與上述半導體元件予以電性接合。 (13) 如（U)中記載之半導體裝置之製造方法，其中，上述 ®第1導電部及上述第2導電部之至少一者為銲錫凸塊。 (14) 如（1)中記載之半導體裝置之製造方法，其中，上述膏 狀”’、硬化丨生树脂組成物包含熱硬化性樹脂和助溶活性劑。 (15) 如（14)中記載之半導體裝置之製造方法，其中，上述 熱硬化性樹脂之含量為上述膏狀熱硬化性樹脂組成物整體 之5重I /。以上、7〇重量％以下。 (16) 如（14)中記載之半導體裝置之製造方法，其中，上述 助熔活性劑之含量為上述膏狀熱硬化性樹脂組成物整體之 098118688 201007855 0.1重量％以上、50重量％以下。 (17) 如（14)中記載之半導體裝置之製造方法，其中，上述 助熔活性劑係於分子中具有羧基及酚性羥基。 (18) 一種半導體裝置，其特徵為以（1)至（17)中任一項記載 之半導體裝置之製造方法取得。 若根據本發明，則可提供在保護凸塊之同時，藉由減低發 生彎曲而保護晶片之半導體裝置的製造方法。 【實施方式】 上述之目的及其他目的、特徵及優點，係藉由下列所述之 較佳實施形態及其附隨之圖式，進一步闡明。 以下，詳細說明關於本發明之半導體裝置之製造方法。 本發明之半導體裝置之製造方法之特徵為具有：於基板或 半導體元件之至少一者，塗佈具有助熔活性之膏狀熱硬化性 樹脂組成物的塗佈步驟；將上述基板和上述半導體元件透過 上述膏狀熱硬化性樹脂組成物予以電性接合的接合步驟；將 上述膏狀熱硬化性樹脂組成物加熱並硬化的硬化步驟；和在 上述硬化步驟後’以lOfC/hour]以上、5〇rC/hour]以下之冷 卻速度予以冷卻的冷卻步驟（以下，亦將fC/hour]以rc/h]表 現）。 圖1〜5為示意性示出本發明之半導體裝置之製造方法的 剖面圖。 以下’說明關於本發明之半導體裝置之製造方法。 098118688 8 201007855 首先，如圖1所示般，準備基板丨（電路基板）。於基板^ 的-面側（圖1中的上側），形成佈線圖案n’配置電極塾部 12。又，於基板1的另一面側（圖丨中的下側），以其後可形 成電路圖案之方式設置導體層13。 25°C以上、玻璃轉移溫度(Tg)以下之區域中，基板1於厚 度方向的熱膨脹係數並無特別限定，以2〇ppm以下為佳， 特別以5〜18ppm為佳（以下，「〜」只要無特別指明則表示 •包含上限值和下限值）。藉由作成此範圍内，則可抑制與晶 片之線膨脹係數差所發生的應力，並且改善彎曲。 於取得此類基板1上，可列舉於構成基板丨之樹脂組成物 中配合許多無機填充材的方法，將構成基板〗之材料作成高 彈性模數的方法等。 (塗佈步驟） 接著，以覆蓋此類基板1之電極墊部12之方式，塗佈具 鲁有助熔活性之膏狀熱硬化性樹脂組成物21(圖2、圖3)。作 為塗佈手段，並無特別限定，例如如圖2所示般，可使用注 射器2。 具有助熔活性之膏狀熱硬化性樹脂組成物21的塗佈量並 無特別限定，例如如圖3所示般，至少以覆蓋電極墊部12(連 接部分)之塗佈量即可。 作為此具有助熔活性之膏狀熱硬化性樹脂組成物21，可 列舉例如含有熱硬化性樹脂和助熔活性劑的樹脂組成物。 098118688 9 201007855 作為前述熱硬化性樹脂，例如可應用環氧樹脂、氛酸^樹 脂、雙馬來醯亞胺樹脂、胺基曱酸酯樹脂、聚丁二稀樹月t 聚紗氧樹脂、紛樹脂、脈樹脂、蜜胺樹脂、不飽和I &樹月匕 醇酸樹脂等目前已知的熱硬化性樹脂。更佳為$裏氧樹月匕 但，用以密封半導體元件目的之雜質，特別離子性雜質少者 為佳。 作為前述環氧樹脂，具體而言可列舉雙酚A型環氧樹月t 雙酚F型環氧樹脂、雙酚AD型環氧樹脂、雙酚E型環氧樹 脂等之雙酚型環氧樹脂、苯酚-酚醛清漆型環氧樹脂、甲酚 酚醛清漆型環氧樹脂等之酚醛清漆型環氧樹脂、n，n_二環氧 丙基苯胺、N，N-二環氧丙基甲苯胺、二胺基二苯基甲烷 氧丙基胺、胺基酚型環氧丙基胺等之芳香族環氧丙基^型= 氧樹脂、氫醌型環氧樹脂、聯苯芳烷型環氧樹脂等之聯苯= 環氧樹脂、甚型環氧樹脂、三*甲烧型環氧樹脂、三酶丙烧 型環氧樹脂、烷基改質三酚甲烷型環氧樹脂、含有三嗪核= 環氧樹脂、二環戊二烯改質_環氧樹脂、萘㈣環氧^ 脂、萘型環氧樹脂、具㈣苯基及/或伸聯苯骨架之盼芳院 基型環氧樹腊、具有伸苯基及/或伸苯基骨架之萘 ^ 型環氧樹脂等之芳燒基型環氧樹脂等之環氧樹脂、乙婦:環 =烯j化物、二環戊二烯氧化物、脂環族二環氧已二酸醋 之脂核式環氧等之脂肪族環氧樹脂、含演環氧樹脂等。 上述熱硬錄樹脂(環氧樹脂）的含量並姉觀定，以膏 098118688 201007855 狀熱硬化性樹脂組成物21整體之5〜70重量％為佳，特別以 10〜50重量％為佳。含量若為上述範圍内，則特別於玻璃轉 移溫度和彈性模數等之熱性及機械特性優良。 - 上述所謂助熔活性劑，係指具有還原金屬表面的氧化膜， .使金屬表面露出之作用（助熔作用）者。 作為上述助熔活性劑，可列舉例如紛系化合物、酸或酸酐 系化合物、胺系化合物、醯胺系化合物等咪唑類、活性松脂 • 等。 作為上述酚系化合物，可列舉例如四曱基雙酚A、兒茶 ' 酚、間苯二酚、氩醌、二曱苯酚、雙酚A、雙酚F、雙酚 AP、雙酚S、雙酚Z、二曱基雙酚A、二曱基雙酚F、四曱 基雙酚A、四曱基雙酚F、聯笨酚、四曱基聯苯酚、二羥基 苯醚、二羥基二苯酮、鄰-羥基苯酚、間-羥基苯酚、對-羥基 苯酚、苯酚酚醛清漆樹脂和鄰曱酚酚醛清漆樹脂之聚酚類、 ❿ 三羥基苯基曱烷等之三酚類、具有萘骨架之酚類。 作為上述酸或酸酐系化合物，可列舉例如甲酸、乙酸、丙 酸、丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、月桂酸、 肉豆蔻酸、棕摘酸、十七酸、硬脂酸、油酸、亞油酸、亞麻 ，酸、花生酸、二十碳六烯酸、二十碳五烯酸、草酸、丙二酸、 琥珀酸、苯甲酸、苯二曱酸、間苯二酸、對苯二酸、水楊酸、 沒食子酸、苯六羧酸、肉桂酸、丙酮酸、乳酸、蘋果酸、檸 檬酸、反丁二烯酸、順丁二烯酸、阿康酸、戊二酸、己二酸、 098118688 11 201007855 庚二酸、辛二酸、壬二酸、癸二酸、胺基酸、硝基羧酸、松 香酸、苯二曱酸酐、苯偏三酸酐、均苯四曱酸酐、順丁烯二 酸酐、二苯酮四羧酸酐、乙二醇雙苯偏三酸酯、海德酸酐、 四溴苯二曱酸酐、四氫苯二甲酸酐、曱基四氫苯二曱酸酐、 曱基奈吉酸酐、六氫苯二甲酸酐、曱基六氫苯二曱酸酐、十 二烷基琥珀酸酐、聚己二酸酐、聚壬二酸酐、聚癸二酸酐、 聚（乙基十八烷二酸)酐、聚（苯基十六烷二酸)酐、曱基海米 克酸酐、三烷基四氳苯二曱酸酐、曱基環己烯二羧酸酐等。 又，具有酴性經基及叛基兩者之化合物亦無妨。具體而 言，可列舉2,3-二羥基苯甲酸、2,4-二羥基笨曱酸、2,5-二 羥基苯甲酸、2,6-二羥基苯曱酸、3,4-二羥基苯曱酸、沒食 子酸、1,4-二羥基-2-環烷酸、3,5-二羥基-2-環烷酸、3,7-二 經基-2-環烧酸、苯驗酜靈、二酌酸等。 作為前述胺系化合物，可列舉例如乙二胺、1,3-二胺基丙 烷、1，4-二胺基丁烷、二伸乙基三胺、三伸乙基四胺、四伸 乙基五胺、五伸乙基六胺、二伸丙基二胺、二乙胺基丙胺、 三（甲胺基）己胺、二甲胺基丙胺、二乙胺基丙胺、曱基亞胺 基雙丙胺、六亞曱基二胺、二胺基二苯基曱烷、二胺基二苯 基颯、異佛爾酮二胺、I烷二胺、異佛爾酮二胺、雙(4-胺 基-3-甲基二環己基）甲烷、二胺基二環己基甲烷、N-胺乙基 哌嗪、3,9-雙(3-胺丙基)2,4,8,10-四崎螺（5,5)十一烷、2,5-二 曱基六亞甲基二胺、三甲基六亞甲基二胺、亞胺基雙丙基 098118688 12 201007855 胺 、雙。、亞甲基)三胺、間-二甲苯 二乙基苯基甲燒、㈣二胺#。—、間笨二胺、二胺基 又作為别述酿鞍系化合物，可列舉例如 聚物與乙二胺戶斤入 雙氰胺、亞麻酸之二 、，牧所合成的聚醯胺樹脂等。 作為别述咪唑類可列舉2_甲基咪唑 2_十-院基·、2_十七炫基咪唾，甲基咪嗤、 嗤、2_笨基味嗓、2_乙基，坐、，二經甲基咪 其不僅可作為％ 基曱基咪唑等。 戸马助熔活性劑，且對於與 應者亦可使肖作為硬化劑。 、虱樹脂產生交聯反 前述助炫活_之含量並無特別 脂組成物21整_> Λ , Μ β狀熱硬化性樹 正體之0.1〜50重量％為佳， 量〇/。為佳。含量芒i u + 且特別以1〜40重 使用作為料Γ ’則雜活性力優良，特別 及_糾 亦為玻璃轉移溫度和彈性模數等之熱性 特性優良，加上硬化性亦優良。 於，類助溶活性劑中，亦以具有氧化還原作用之同時，有 2環氧樹脂等之熱硬化性樹脂的硬化反應，並讀組裝於 父聯的化合物（具有赠活性的硬化劑）為佳。因此，不需要 助熔洗淨，且可提高長期可靠性。 作為此具有助熔性的硬化劑，可列舉例如苯酚化合物、酸 肝、咪》坐類、具有酚性羥基與羧基兩者的化合物等。 於具有助熔活性之膏狀熱硬化性樹脂組成物21中，除了 上述之熱硬化性樹脂、助炼活性劑以外，亦可含有硬化劑、 098118688 201007855 填充劑、偶合劑等之填充劑。 石:母述真充劑’可列舉例如滑石、锻燒滑石、未煅燒滑 石、雲母、玻璃等之矽酸睢好 石夕（熔融球狀二氧切、化欽、氧化銘、熔融二氧化 ㈣晶二氧切等之碎二㈣)、合成二氧化 碳酸鎮、水滑石等之魏末等之_^破酸約、 ^ ^ 風氧化紹、IL氧化鎮、氫氧化 氧化物硫酸鋇、硫_、亞硫酸解之硫酸鹽或 亞瓜鹽、石朋酸鋅、偏侧酸鋇、蝴酸紹、删賴、破納等 之魏鹽、氮她、氮㈣、氮切等之氮化物等之無機填 充^又’亦可使用有機填充劑。其中亦赠融二氧化梦: —-氧化梦、合成二氧化砂粉末因可提高液狀密封樹脂组 成物之耐熱性、耐祕、強度等可靠性，故為佳。前述填充 劑之形狀並無㈣限定，但由歸、流動特性之觀點而言， 形狀以球狀為佳。 前述填細之含量絲制較，以纽熱硬化性樹脂組 成物2\整體之20〜9〇重量％為佳，_以3()〜85重量％為 佳。含量若未滿上述下限值，财時使提高低_脹化和低 吸水率化等之可靠㈣效果純，若超過上述上限值，則熱 硬化性樹月旨組成物的黏度增加，作業性降低，且凸塊連接性 有降低之情形。 作為上述偶合劑，可列舉例如乙稀基三氯石夕炫、乙稀基三 甲氧基㈣、乙烯基三乙氧基魏、乙烯基三♦甲氧乙氧 098118688 14 201007855 基)石夕烧、/?-(3,4-環氧環己基）乙基三乙氧基石夕院、γ-丙烯氧 丙基曱基二曱氧基矽烷、7-丙烯氧丙基三曱氧基矽烷、7-丙 烯氧丙基曱基二乙氧基矽烷、7-丙烯氧丙基三乙氧基矽烷、 γ-曱基丙烯氧丙基曱基二曱氧基矽烷、γ-曱基丙烯氧丙基三 甲氧基矽烷、γ-曱基丙烯氧丙基甲基二乙氧基矽烷、γ-甲基 丙稀氧丙基二乙氧基石夕炫、Ύ-環氧丙氧基丙基三甲氧基碎 烷、7-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲 • 基二乙氧基矽烷、Τ·環氧丙氧基丙基三乙氧基矽烷、對-苯 乙烯基三曱氧基矽烷、Ν-|0(胺乙基)>胺丙基曱基二曱氧基矽 烷、Ν-/3(胺乙基)γ-胺丙基三曱氧基矽烷、N-风胺乙基)γ-胺 丙基二乙氧基石夕烧、γ_胺丙基三乙氧基碎烧、γ·苯基胺丙 基二曱氧基石夕烧等，可單獨或混合使用。此等偶合劑中亦以 胺終端型矽烷偶合劑為佳。如此，可提高流動性和密黏力。 0 上述偶合劑之含量並無特別限定，以膏狀熱硬化性樹脂組 成物21整體之（U〜2〇重量％為佳，特別以〇 3〜1〇重量％為 ，。含量若未滿上述下限值，則密黏力和流動性有時降低， 若超過上述上限值，則真空揮發性有時降低。 (接合步驟） 其次，將半導體元件3，使用倒襄晶片接合器32搭载至 基板1。此時，以將半導體元件3的銲錫凸塊31(第1導電 部谈基板i之電極墊部12(第2導電部)抵接之方式，配合 位置搭載（圖4)。搭載時，將鲜錫凸塊31 一邊溶融一邊與電 098118688 15 201007855 塾。P電性連接。此時，因Μ狀熱硬化性樹脂組成物 21具有助溶活性，故可一邊除去銲錫凸塊Μ表面之氧化 膜，-邊進行銲錫連接（圖5)。即，於本接合步驟中，以利 用貧狀熱硬鎌樹脂組成物21 €蓋之㈣，使觸凸塊Η 與電極塾部12為鲜锡連接之方4 式，將基板1與半導體元件 3予以電性接合。 此連接條件並無特別限定，但將倒装晶片接合器η的設 定溫度設定成銲錫凸塊31所㈣之銲錫材料熔點的 + 10C〜職’並且以1〜30秒鐘加熱為佳。此時，若僅由 半導體元件3側加熱，係為更佳。藉此，可減低對於基板的 熱壓力’並且可減低與晶狀_彡脹雜差所發生的彎曲， 更且亦可抑制來自基板的真空揮發性。 此處，於本實施形態中，第i導電部及第2導電部並非分 別限定於銲錫凸塊31及電極塾部12,至少―者為銲錫凸塊 為佳，均為銲錫凸塊亦可。 (硬化步驟） 其次，將膏狀熱硬化性樹脂組成物21加熱，令其硬化。 如此，可將銲錫凸塊31與電極墊部12之間密封，提高連接 可靠性。作為將膏狀熱硬化性樹脂組成物21加熱硬化之手 段’並無特別限定，例如可使用烤爐。 加熱條件係依據所使用的熱硬化性樹脂，並無特別限定， 以100〜20(TCx30〜180分鐘為佳，特別以^047(^06(^50 098118688 16 201007855 分鐘為佳。例如，加熱溫度為膏狀熱硬化性樹脂組成物η 之硬化物的玻璃轉移溫度以上。 硬化步驟後具有助騎性之纽熱硬錄樹成物21 之硬化物的玻璃轉移溫度並無特別限定，以如艺…㈨乞為 • 佳，且M 50C〜150。(：為特佳。將玻璃轉移溫度作成上述下 限值以上，則可更有效提高凸塊的保護。又，作成上述上限 值以下，則可有效抑制基板1及半導體元件3接合後形成之 參具有助熔活性之膏狀熱硬化性樹脂組成物21所構成之凸起 的裂痕。 硬化步驟後之具有助熔活性之膏狀熱硬化性樹脂組成物 21之硬化物，於25°C以上玻璃轉移溫度以下區域中的平均 線膨脹係數(〇fl)並無特別限定，以5ppm/t：〜6〇ppm/r為佳， 且以15ppm/°C〜40ppm/°C為特佳。將玻璃轉移溫度作成上述 範圍内，則可使具有助熔活性之膏狀熱硬化性樹脂組成物 籲 21之硬化物的玻璃轉移溫度以下的平均線膨脹係數，作成 接近凸塊(銲錫凸塊31)的線膨脹係數。因此，可有效抑制凸 塊裂痕。 硬化步驟後之具有助熔活性之膏狀熱硬化性樹脂組成物 2ί之硬化物的玻璃轉移溫度及線膨脹係數可根據下列方法 測定。 將具有助熔活性之膏狀熱硬化性樹脂組成物21，以 150°C、硬化3小時，製作4mm><4mmx 10mm大小的樣品。 098118688 17 201007855 其-人，使用TMA裝置(Sii公司製），以愿縮荷重：克、 升溫速度：1(TC/分鐘、測定溫度範圍：_靴〜扇。C，算 出玻璃轉移溫度及玻璃轉移溫度以下區域t的平均線膨脹 係數。 (冷卻步驟） 接著，於上述硬化步驟後，以10〜耽/h之冷卻速度冷卻。 冷卻手段可使用將硬化步驟所用之烤爐接著使用，並且設定 此烤爐之冷卻速度條件的手段。冷卻速度可為—定速度，且 亦可為可變速度。作為算出冷卻速度的手段，例如，將硬化 步驟完成後之環境氣财的溫度，減去冷卻步料了後溫度 的溫度差’除以冷卻時間則可取得。此處，溫度例如表= 爐環境氣體中的溫度。 如此，以10〜50°c/h之冷卻速度（第α卻速度）予以冷卻， 特別以一定之冷卻速度予以冷卻，則可緩和冷卻中的應力並 且可減低彎曲。 於先前之半導體裝置之製造步驟的一例中，如專利文獻2 所示般，未進行冷卻步驟，以迴流爐實施加以銲錫後，將半 導體元件與佈線基板之間的熱硬化性樹脂以120艺加熱硬 化，取得半導體裝置。如此，由生產性之觀點而言硬化後 立即取出半導體裝置，並且曝露於室溫中。因此，急遽冷卻 半導體裝置’至少以10(TC/h以上之冷卻速度冷卻。若如此 處理，則在黏彈性體之熱硬化性樹脂中，於内部和外部發生 098118688 18 201007855 熱分佈，並且發生殘留應力。即’因急遽冷卻發生構成構件 的熱收縮。更且，由於構成構件各別的線膨脹係數差，故發 生大應力。如此’於先前之半導體裝置的製造步驟中，經由 起因於急遽冷卻的應力，而發生彎曲。 相對地’於本發明之半導體裝置之製造步驟中，如上述進 行冷卻步驟。更且，於硬化步驟後，接著，若以l〇〜5(rc/h 之冷卻速度冷卻’則熱收縮的方式變慢，更且，可緩和構成 • 構件之線膨脹係數差所造成的應力。因此，於本發明中，可 緩和冷卻中的應力並且減低彎曲。 冷卻速度（第1冷卻速度)之下限值為15t/h以上為佳，且 以2(TC/h以上為更佳。又，冷卻速度（第i冷卻速度)之上限 值以4(TC/h以下為佳，且以贼/h以下為更佳。藉由令冷 卻速度為上述下限值以上，則可更加抑制發生彎曲。又，: 冷卻速度作成上述上限值以下，則可更加抑制發生彎曲。 於本冷卻步驟中，控制冷卻速度的溫度範圍（以下，亦稱 =制範圍）並無特別㈣，於將硬化步驟中之膏狀熱硬化 性树月日組成物21的硬化溫度定$ Terc]時， ::(ΤΓΓ]的溫度範圍。將此溫度範圍以上述第1 靜生 為佳。如此，使控制範_的應力更加顯 二Μ控制溫度範圍抑制發生f曲的效果特別優良。 产陳Α1 Γ卻逮度㈣聰’更具㈣言，於將硬化溫 度()^15G_，可為⑼，的溫度範園，更佳 098US688 201007855 為150〜80[C]的溫度範圍。將此溫度範圍以第1冷卻速度予 以冷部為佳。特別，控制範圍可A TcfC]以下、（膏狀熱硬 化丨生樹知組成物21之硬化物的玻璃轉移溫度_2〇)pc]以上 之溫度範圍，緒而言，可為15〇〜(纽熱硬化性樹脂組成 物21之硬化物的玻璃轉移溫度㈣-戰。c]之溫度範圍。將 此/m度範圍以上述第丨冷卻速度冷卻為佳。若控制範圍為此 溫度範圍内，則彎曲的抑制特優。 又，將上述控制範圍外的冷卻速度定為第2冷卻速度。此 冷卻速度之控制範圍外（特別於低溫侧的範圍外，例如，未 滿（Tc-90)rc]之溫度範圍），並無特別限定，但以第2冷卻 速度為60〜120°C/h為佳，特別以4〇〜1〇〇〇c/h為佳。如此， 緩和應力之效果、與良好生產性的平衡優良。 於如上述之步驟中，經過對於母板形成連接用之銲錫凸塊 和構件搭載等之步驟，取得半導體裝置。如此處理所得的半 導體裝置，可保護凸塊之同時，經由減低發生彎曲則可保護 半導體元件。 (實施例） 以下，根據實施例及比較例詳細說明本發明，但本發明不 被限定於此。 (實施例1) 1 ·膏狀熱硬化性樹脂組成物的調製 秤量作為熱硬化性樹脂的雙酚F型環氧樹脂（大日本油墨 098118688 20 201007855 化學工業(股）製，EXA_83〇LVP，環氧當量16ι)70.9重量〇/〇、 作為硬化劑的苯酚酚醛清漆（住友Dulese(股）製，編號 PR 51470 ’軟化點c)21.3重量。/。、作為助熔活性劑的苯 酚酞靈（東京化成工業(股）製(熔點235。〇)71重量％、和作 為硬化促進劑之2_苯基_4_曱基咪唑(四國化成工業（股)製， 2P4MZ)0.7重量％，並以三根輥予以分散混練，於真空下進 行脫泡處理取得膏狀熱硬化性樹脂組成物。 • 2.半導體裝置之製造 將上述膏狀熱硬化性樹脂組成物，塗佈至已形成電路圖案 之電路基板(作為核心材，住友Becklite(股）公司製，編號 ELC-4785GS，熱膨脹係數(Tg以下)χγ方向：llppm，z方 向：16ppm)，其次將具有銲錫凸塊之半導體元件（尺寸縱15 X橫15χ厚度0.725mm) ’以倒裝晶片接合器260°C、加熱10 秒鐘進行搭載。其次，以烤爐在15〇1下加熱120分鐘，使 ® 膏狀熱硬化性樹脂組成物硬化。 其次，設定烤爐之冷卻速度的條件，並以25°C/h之冷卻 速度冷卻至150〜60°C之溫度圍後，以60°C/h冷卻至30 °C附近，取得半導體裝置。此處，溫度為表示烤爐環境氣體 中的溫度。 (實施例2) 於半導體裝置之製造步驟中，除了使冷卻速度為如下以 外，同實施例1處理。 098118688 21 201007855 使150〜60°C範圍之冷卻速度為15〇c/h。 (實施例3) 於半導體褒置之製造步驟中，除了使冷卻範圍為如下以 外’同實施例1處理。 使150〜8(TC之範圍為以實施例i同樣之冷卻速度，且關 於未滿80°C〜30°C為以rC/分鐘冷卻。 (實施例4) 除了使用下列物質作為膏狀熱硬化性樹脂組成物以外，同 實施例1處理。 秤量作為熱硬化性樹脂的雙酚F型環氧樹脂（大日本油墨 化學工業（股)製，EXA-830LVP，環氧當量161)76.3重量％、 作為具有助炼活性的硬化劑2,5-二經基苯甲酸(東京化成工 業製（溶點200〜205°C ))22.9重量％，和作為硬化促進劑之2_ 苯基-4-甲基咪唑（四國化成工業（股）製）0 8重量％，並以三根 輥予以分散混練’於真空下進行脫泡處理取得膏狀熱硬化性 樹脂組成物。 (實施例5) 於半導體裝置之製造方法中’除了將膏狀熱硬化性樹脂組 成物塗佈至半導體元件而非基板以外，同實施例1處理。 (實施例6) 除了使用下列物質作為基板以外，同實施例1處理。 使用核心材為BT(三菱瓦斯化學公司製，編號 098118688 22 201007855 CCL-HL832HS，熱_係數(Tg 以下)χγ 方向：i5ppm，z 方向：55ppm)者作為基板。 (比較例1) 於半導體裝置之製造步财，除了使冷卻速度為如下以 外，同實施例1處理。 使150〜60°C範圍之冷卻速度為5°c/h。 (比較例2) φ 於半導體裝置之製造步驟中，將下述春此血 竹卜逆膏狀熱硬化性樹脂組 成物，注入已預先在基板上搭載半導體元件的半導體裝置， 取得半導體封裝物。 < 膏狀熱硬化性樹驗成物為秤量作為熱硬化性樹脂的雙 盼F型環氧樹脂（大日本油墨化學工業（股）製， EXA-830LVP，環氧當量161)79.4重量％、作為硬化劑i苯 酚酚醛清漆19.8重量％、和作為硬化促進劑的2_苯基_4-甲 •基味嗤（四國化成工業（股）製）〇.8重量。/。，並以三根輥予以分 散混練，於真空下進行脫泡處理而取得。 又’於硬化步驟後’於依舊維持硬化溫度的烤爐中將半導 體裝置保持指定時間後’立即取出半導體裝置，並曝露於室 溫中，評估此半導體裝置的彎曲。此時，硬化溫度為15(rc、 室溫為25°C，冷卻時間為30分鐘左右，故以約25〇°c/h以 上之冷卻速度予以冷卻。評估半導體裝置之結果，以目視可 知發生彎曲。 098118688 23 201007855 關於各實施例及比較例所得之半導體裝置，進行下列評 估平估項目與内容共同示出。所得之結果示於表1。 1. 半導體震置之彎曲 評估所得半導體裝置的彎曲、和後述耐迴流試驗後之半導 體裝置的彎曲。各符號為如下。 ◎’彎曲量為80μιη以下。 ◦ ’彎曲篁為超過80μιη、ΙΟΟμηι以下。 △脅曲量為超過1 〇〇μπι、120/im以下。 X : f曲量為超過12〇μιη。 2. 可靠性 藉由評估以JEDEC階段3、260〇C波峰SMT迴流(3次)條 件進行耐迴流試驗後之半導體裝置的剝離性及連接性，進行 可罪性評估。另外，評估為以20進行。各符號為如下。 剝離性 全數無剝離。 〇： 剝離發生率為未滿5%。 剝離發生率為5%以上、未滿1〇〇/。。 X: 剝離發生率為10%以上。 連接性 ◎:連接率為100%。 〇：連接率為未滿100%(8/10以上）、95%以上(2/10以下）。 △:連接率為超過80%、未滿95%。 098118688 24 201007855 ·連接率為80%以下。 3.作業性 以比較例2之作業工數作為基準（1〇〇)，評估作業性。各 - 符號為如下。 作業工數為50以上、75以下。 〇： 作業工數為超過75、95以下。 作業工數為超過95、1〇5以下。 X: 作業工數為超過105、150以下。 4.膏狀熱硬化性樹脂組成物之硬化物的玻璃轉移溫度及線 膨脹係數 將實施例所得之膏狀熱硬化性樹脂組成物以15〇。(：硬化3 小時，製作4mmx4mmx 10mm大小的樣品。其次，使用TMA 裝置(SII公司製），以壓縮荷重：1〇克、升溫速度：i〇°c/ 分鐘、測定溫度範圍：-100°C〜300°C，算出玻璃轉移溫度及 玻璃轉移溫度以下區域中的平均線膨脹係數。 實施例 1 實施例 2 實施例 3 物例 4 實施例 5 實施例 6 峨例 1 峨例 2 趣b滕脂 雙酚F型環麵旨 70.9 70.9 70.9 763 70.9 709 70.9 79.4 硬化劑 漆 21.3 21.3 213 0.0 21.3 213 213 19.8 苯蝴5^蜜 7.1 7·1 7.1 0.0 7.1 7.1 7.1 0.0 2^二甲酸 0.0 0.0 0.0 22.9 0.0 0.0 0.0 0.0 硬刺 2-笨基>4·甲基味也 0.7 0.7 0.7 0.8 0.7 0.7 0.7 0.8 膏狀之細b陳 樹脂組成物 玻璃轉移贿ΓΟ 110 110 110 90 110 110 110 110 _服係教αΐ (PfBH/°C) 55 55 55 60 55 55 55 55 冷細 tirC/h) 25 15 25 25 25 25 5 25 冷卻範圍 150«) 150*60 i5(m 150^0 150«) 150«) 15(W0 150«) 脊曲傲硬ib4理後） ◎ ◎ 〇 ◎ ◎ 〇 Δ Δ 彎曲(对减試驗後） 〇 〇 〇 〇 ◎ 〇 X X 可靠麵細 ◎ ◎ ◎ ◎ ◎ 〇 △ Δ 可靠樹速細 ◎ ◎ ◎ 〇 ◎ 〇 △ 〇 作業性 70 75 65 70 70 70 80 100 25 098118688 201007855 如表1所闡明般，實施例1〜6所得之半導體裝置，於製造 後以及耐迴流試驗後兩者，彎曲小。 又，實施例1〜6為可靠性亦優良。如此，顯示銲錫凸塊受 保護。 又，實施例1〜6為作業性亦優良。 【圖式簡單說明】
圖！為示出半導體裝置之製造方法之―例的剖面圖 圖2為示出半導體裝置之製造方法之—例的剖面圖 圖3為示出半導體裝置之製造方法之—例的剖面圖 圖4為示出半導體裝置之製造方法之―例 圖5為示出半導體裝置之製造方法 【主要元件符號說明】 叫剖面圖 1 基板 2 注射器 3 半導體元件 11 佈線圖案 12 電極塾部 13 導體層 21 熱硬化性樹脂組成物 31 鋒錫凸塊 32 倒裝晶片接合器
098118688 26

Claims (1)

  1. 201007855 七、申請專利範圍： 1. 一種半導體裝置之製造方法，其特徵為具有： 在基板或半導體元件之至少一者，塗佈具有助熔活性之膏 狀熱硬化性樹脂組成物的塗佈步驟； 將上述基板和上述半導體元件透過上述膏狀熱硬化性樹 脂組成物予以電性接合的接合步驟； 將上述膏狀熱硬化性樹脂組成物加熱硬化的硬化步驟；以 魯及 在上述硬化步驟後，以l〇[〇C/hour]以上、5〇rc/hour]以下 之冷卻速度予以冷卻的冷卻步驟。 2. 如申請專利範圍第1項之半導體裝置之製造方法，其 中’於上述硬化步驟中’將上述膏狀熱硬化性樹脂組成物之 硬化溫度定為TcfC]時， 上述冷卻步驟係以上述冷卻速度冷卻至Tcpc]以下、 © (Tc-90)[°C]以上之溫度範圍。 3. 如申請專利範圍第2項之半導體裝置之製造方法，其 中’將上述硬化溫度(Tc)定為15〇[。(：]時， 上述冷卻步驟係以上述冷卻速度冷卻至15〇°C以下、60¾ 以上之溫度範圍。 4. 如申請專利範圍第2項之半導體裝置之製造方法，其 中，於未滿（Τ〇90)[°(：]之溫度範圍中，以6〇rC/hcmr]以上、 120[°C/hour]以下之冷卻速度進行冷卻。 098118688 27 201007855 5. 如申請專利範圍第1項之半導體裝置之製造方法，其 中，於25°C以上' 玻璃轉移溫度(Tg)以下之區域中，上述基 板於厚度方向的線膨脹係數（α 1)為2〇ppm以下。 6. 如申請專利範圍第丨項之半導體裝置之製造方法，其 中，於25°C以上、玻璃轉移溫度（Tg)以下之區域中，上述基 板於厚度方向的線膨脹係數（α 1)為5ppm以上。 7. 如申請專利範圍第1項之半導體裝置之製造方法，其 中’上述硬化步驟後之上述膏狀熱硬化性樹脂組成物之硬化 〇 物的玻璃轉移溫度為50〇C以上、15(TC以下。 8. 如申請專利範圍第2項之半導體裝置之製造方法，其 中，上述硬化步驟後之上述膏狀熱硬化性樹脂組成物之硬化 物的玻璃轉移溫度為50。(：以上、15〇。(：以下。 9. 如申請專利範圍第8項之半導體裝置之製造方法其 中，上述冷卻步驟為以上述冷卻速度冷卻至丁〇[艺]以下、（上 述膏狀熱硬化性樹脂組成物之硬化物的上述玻璃轉移溫度 ⑬ -20)[°C]以上的溫度範圍。 10. 如申請專利範圍第1項之半導體裝置之製造方法，其 中’於25°C以上、玻璃轉移溫度（Tg)以下之區域中，上述 . 硬化步驟後之上述膏狀熱硬化性樹脂組成物之硬化物的線 ▲ 膨脹係數為5ppm/°C以上、60ppm/t：以下。 11. 如申請專利範圍第丨項之半導體裝置之製造方法其 中，於上述冷卻步驟中，上述冷卻速度為25[<Jc/h〇虹]以下。 098118688 28 201007855 12.如申請專利範圍第1項之半導體裝置之製造方法，其 中’使用具有第1導電部之上述基板和具有第2導電部之上 述半導體元件， . 上述接合步驟為以上述膏狀熱硬化性樹脂組成物覆蓋之 ，狀態，以使上述第1導電部與上述第2導電部進行銲錫連接 之方式，將上述基板與上述半導體元件予以電性接合。 13·如申請專利範圍第12項之半導體裝置之製造方法，其 ❹中，上述第1導電部及上述第2導電部之至少一者為銲錫凸 塊。 14. 如申請專利範圍第丨項之半導體裝置之製造方法，其 中，上述膏狀熱硬化性樹脂組成物包含熱硬化性樹脂和助熔 活性劑。 15. 如申請專利範圍第14項之半導體裝置之製造方法其 中’上述熱硬化賴脂之含量為上述纽熱硬化性樹脂組成 • 物整體之5重量％以上、70重量％以下。 16·如申請專利範圍第14項之半導體裝置之製造方法，其 中，上述祕活性狀含量為上述纽熱硬化性難組成物 整體之0.1重量％以上、50重量％以下。 17. 如申請專利範圍第14項之半導體裝置之製造方法，其 中，上述助熔活性劑係於分子中具有羧基及酚性羥基。八 18. -種半導體|置，其係以中請專利範圍第^項中 任一項之半導體裝置之製造方法取得。 098118688 29
TW098118688A 2008-06-05 2009-06-05 Method for manufacturing semiconductor device and semiconductor device TW201007855A (en)

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