JPWO2009147828A1 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JPWO2009147828A1 JPWO2009147828A1 JP2010515766A JP2010515766A JPWO2009147828A1 JP WO2009147828 A1 JPWO2009147828 A1 JP WO2009147828A1 JP 2010515766 A JP2010515766 A JP 2010515766A JP 2010515766 A JP2010515766 A JP 2010515766A JP WO2009147828 A1 JPWO2009147828 A1 JP WO2009147828A1
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- semiconductor device
- manufacturing
- thermosetting resin
- resin composition
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 78
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- 239000011342 resin composition Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 70
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Images
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Abstract
Description
一方で、半導体素子の配線デザインの狭ピッチ化が進み、その特性を維持させるために半導体素子の構造も複雑化し、さらに半導体素子自体が脆くなってきている。
また、昨今の環境問題の傾向から、バンプに使用される金属自体も鉛フリー化などの動きを受け、このバンプを保護するのも難しくなってきている。
(1) 基板または半導体素子の少なくとも一方に、フラックス活性を有するペースト状の熱硬化性樹脂組成物を塗布する塗布工程と、
前記基板と前記半導体素子とを前記ペースト状の熱硬化性樹脂組成物を介して電気的に接合する接合工程と、
前記ペースト状の熱硬化性樹脂組成物を加熱して硬化する硬化工程と、
前記硬化工程後に、10[℃/hour]以上、50[℃/hour]以下の冷却速度で冷却する冷却工程を有する、半導体装置の製造方法。
(2) 前記硬化工程において、前記ペースト状の熱硬化性樹脂組成物の硬化温度をTc[℃]としたとき、
前記冷却工程は、Tc[℃]以下、(Tc−90)[℃]以上の温度範囲を前記冷却速度で冷却する、(1)に記載の半導体装置の製造方法。
(3) 前記硬化温度(Tc)を150[℃]としたとき、
前記冷却工程は、150℃以下、60℃以上の温度範囲を前記冷却速度で冷却する、(2)に記載の半導体装置の製造方法。
(4) (Tc−90)[℃]未満の温度範囲においては、60[℃/hour]以上、120[℃/hour]以下の冷却速度で冷却する、(2)に記載の半導体装置の製造方法。
(5) 25℃以上、ガラス転移温度(Tg)以下の領域における、前記基板の厚さ方向の線膨張係数(α1)が、20ppm以下である、(1)に記載の半導体装置の製造方法。
(6) 25℃以上、ガラス転移温度(Tg)以下の領域における、前記基板の厚さ方向の線膨張係数(α1)が、5ppm以上である、(1)に記載の半導体装置の製造方法。
(7) 前記硬化工程後の前記ペースト状の熱硬化性樹脂組成物の硬化物のガラス転移温度が、50℃以上、150℃以下である、(1)に記載の半導体装置の製造方法。
(8) 前記硬化工程後の前記ペースト状の熱硬化性樹脂組成物の硬化物のガラス転移温度が、50℃以上、150℃以下である、(2)に記載の半導体装置の製造方法。
(9) 前記冷却工程は、Tc[℃]以下、(前記ペースト状の熱硬化性樹脂組成物の硬化物の前記ガラス転移温度−20)[℃]以上の温度範囲を前記冷却速度で冷却するものである、(8)に記載の半導体装置の製造方法。
(10) 25℃以上、ガラス転移温度(Tg)以下の領域における、前記硬化工程後の前記ペースト状の熱硬化性樹脂組成物の硬化物の線膨張係数が、5ppm/℃以上、60ppm/℃以下である、(1)に記載の半導体装置の製造方法。
(11) 前記冷却工程において、前記冷却速度が25[℃/hour]以下である、(1)に記載の半導体装置の製造方法。
(12) 第1の導電部を有する前記基板と、第2の導電部を有する前記半導体素子と、を用い、
前記接合工程は、前記ペースト状の熱硬化性樹脂組成物で覆った状態で、前記第1の導電部と前記第2の導電部とが半田接続するように、前記基板と前記半導体素子とを電気的に接合する、(1)に記載の半導体装置の製造方法。
(13) 前記第1の導電部および前記第2の導電部の、少なくとも一方は半田バンプである、(12)に記載の半導体装置の製造方法。
(14) 前記ペースト状の熱硬化性樹脂組成物は、熱硬化性樹脂と、フラックス活性剤とを含む、(1)に記載の半導体装置の製造方法。
(15) 前記熱硬化性樹脂の含有量は、前記ペースト状の熱硬化性樹脂組成物全体の5重量%以上、70重量%以下である、(14)に記載の半導体装置の製造方法。
(16) 前記フラックス活性剤の含有量は、前記ペースト状の熱硬化性樹脂組成物全体の0.1重量%以上、50重量%以下である、(14)に記載の半導体装置の製造方法。
(17) 前記フラックス活性剤は、分子中にカルボキシル基およびフェノール性水酸基を有する、(14)に記載の半導体装置の製造方法。
(18) (1)から(17)のいずれかに記載の半導体装置の製造方法で得られた半導体装置。
本発明の半導体装置の製造方法は、基板または半導体素子の少なくとも一方に、フラックス活性を有するペースト状の熱硬化性樹脂組成物を塗布する塗布工程と、上記基板と上記半導体素子とを上記ペースト状の熱硬化性樹脂組成物を介して電気的に接合する接合工程と、上記ペースト状の熱硬化性樹脂組成物を加熱して硬化する硬化工程と、上記硬化工程後に、10[℃/hour]以上、50[℃/hour]以下の冷却速度で冷却する冷却工程を有することを特徴とする(以下、[℃/hour]を[℃/h]と表現することもある)。
以下、本発明の半導体装置の製造方法について説明する。
まず、図1に示すように、基板1(回路基板)を用意する。基板1の一方の面側(図1中の上側)には、配線パターン11が形成されており、電極パッド部12が配置されている。また、基板1の他方の面側(図1中の下側)には、後に回路パターンを形成できるように導体層13が設けられている。
続いて、このような基板1の電極パッド部12を覆うように、フラックス活性を有するペースト状の熱硬化性樹脂組成物21を塗布する(図2、図3)。塗布する手段としては、特に限定されないが、たとえば図2に示すように、シリンジ2を用いることができる。
フラックス活性を有するペースト状の熱硬化性樹脂組成物21の塗布量は、特に限定されないが、たとえば図3に示すように、少なくとも電極パッド部12(接続部分)を覆う塗布量であればよい。
このフラックス活性を有するペースト状の熱硬化性樹脂組成物21としては、例えば熱硬化性樹脂と、フラックス活性剤とを含む樹脂組成物が挙げられる。
前記フラックス活性剤としては、例えばフェノール系化合物、酸または酸無水物系化合物、アミン系化合物、アミド系化合物等イミダゾール類、活性ロジン等が挙げられる。
前記フェノール系化合物としては、例えばテトラメチルビスフェノールA、カテコール、レゾルシン、ハイドロキノン、キシレノール、ビスフェノールA、ビスフェノールF、ビスフェノールAP、ビスフェノールS、ビスフェノールZ、ジメチルビスフェノールA、ジメチルビスフェノールF、テトラメチルビスフェノールA、テトラメチルビスフェノールF、ビフェノール、テトラメチルビフェノール、ジヒドロキシフェニルエーテル、ジヒドロキシベンゾフェノン、o−ヒドロキシフェノール、m−ヒドロキシフェノール、p−ヒドロキシフェノール、フェノールノボラック樹脂やオルソクレゾールノボラック樹脂のポリフェノール類、トリヒドロキシフェニルメタン等のトリスフェノール類、ナフタレン骨格を有するフェノール類等が挙げられる。
前記イミダゾール類としては2−メチルイミダゾール、2−エチル−4−メチルイミダゾール、2−ウンデシルイミダゾール、2−ヘプタデシルイミダゾール、2−フェニル−4,5−ジヒドロキシメチルイミダゾール、2−フェニルイミダゾール、2−エチルイミダゾール、2−エチル−4−メチルイミダゾール等が挙げられる。
これらはフラックス活性剤としてのみならず、エポキシ樹脂と架橋反応を生じるものについては硬化剤としても使用することが出来る。
このフラックス活性を有する硬化剤としては、例えばフェノール化合物、酸無水物、イミダゾール類、フェノール性水酸基とカルボキル基の両方を有する化合物等を挙げることができる。
前記フィラーとしては、例えばタルク、焼成クレー、未焼成クレー、マイカ、ガラス等のケイ酸塩、酸化チタン、アルミナ、溶融シリカ(溶融球状シリカ、溶融破砕シリカ)、合成シリカ、結晶シリカ等のシリカ粉末等の酸化物、炭酸カルシウム、炭酸マグネシウム、ハイドロタルサイト等の炭酸塩、水酸化アルミニウム、水酸化マグネシウム、水酸化カルシウム等の水酸化物、硫酸バリウム、硫酸カルシウム、亜硫酸カルシウム等の硫酸塩または亜硫酸塩、ホウ酸亜鉛、メタホウ酸バリウム、ホウ酸アルミニウム、ホウ酸カルシウム、ホウ酸ナトリウム等のホウ酸塩、窒化アルミニウム、窒化ホウ素、窒化ケイ素等の窒化物等の無機充填剤を挙げることができる。また、有機充填剤を用いても良い。これらの中でも液状封止樹脂組成物の耐熱性、耐湿性、強度等の信頼性を向上できることから溶融シリカ、結晶シリカ、合成シリカ粉末が好ましい。前記充填剤の形状は、特に限定されないが、粘度・流動特性の観点から形状は球状であることが好ましい。
次に、半導体素子3を、フリップチップボンダー32を用いて基板1に搭載する。この際、半導体素子3の半田バンプ31(第1の導電部)と、基板1の電極パッド部12(第2の導電部)とが当接するように位置合わせしながら搭載する(図4)。搭載する際には、半田バンプ31を溶融させながら電極パッド部12と電気的に接続する。この際、ペースト状の熱硬化性樹脂組成物21がフラックス活性を有しているので、半田バンプ31の表面の酸化膜を除去しながら半田接続することが可能となる(図5)。つまり、本接合工程において、ペースト状の熱硬化性樹脂組成物21で覆った状態で、半田バンプ31と電極パッド部12とが半田接続するように、基板1と半導体素子3とを電気的に接合する。
ここで、本実施の形態においては、第1の導電部および第2の導電部は、それぞれ半田バンプ31および電極パッド部12に限定されず、少なくとも一方が半田バンプであればよく、ともに半田バンプでもよい。
そして、ペースト状の熱硬化性樹脂組成物21を加熱して、硬化させる。これにより、半田バンプ31と電極パッド部12との間を封止し、接続信頼性を向上させることができる。ペースト状の熱硬化性樹脂組成物21を加熱硬化させる手段としては、特に限定されないが、たとえば、オーブンを用いることができる。
加熱する条件は、使用する熱硬化性樹脂に依存し、特に限定されないが、100〜200℃×30〜180分間が好ましく、特に120〜170℃×60〜150分間が好ましい。たとえば、加熱温度としては、ペースト状の熱硬化性樹脂組成物21の硬化物のガラス転移温度以上とする。
フラックス活性を有するペースト状の熱硬化性樹脂組成物21を、150℃、3時間にて硬化し、4mmX4mmX10mmの大きさのサンプルを作製する。次いで、TMA装置(SII社製)を用い、圧縮荷重:10g、昇温速度:10℃/分、測定温度範囲:−100℃〜300℃、によりガラス転移温度およびガラス転移温度以下の領域における平均線膨張係数を算出する。
続いて、前記硬化工程後に、10〜50℃/hの冷却速度で冷却する。冷却する手段としては、たとえば、硬化工程で用いたオーブンを引き続き使用して、このオーブンの冷却速度の条件を設定する手段が用いられる。冷却速度は、一定速度でもよく、可変速度でもよい。冷却速度を算出する手段としては、たとえば、硬化工程直後の雰囲気中の温度から冷却工程終了後の温度を引いた温度差を、冷却時間で割ることにより得られる。ここで、温度は、たとえば、オーブン雰囲気中の温度を示す。
このように、10〜50℃/hの冷却速度(第1の冷却速度)で冷却する、特に一定の冷却速度で冷却することにより、冷却中の応力を緩和して反りを低減することができる。
1.ペースト状の熱硬化性樹脂組成物の調製
熱硬化性樹脂としてビスフェノールF型エポキシ樹脂(大日本インキ化学工業(株)製、EXA−830LVP、エポキシ当量161)70.9重量%と、硬化剤としてフェノールノボラック(住友デュレズ(株)製、品番PR−51470、軟化点110℃)21.3重量%と、フラックス活性剤としてフェノールフタリン(東京化成工業(株)製(融点235℃))7.1重量%と、硬化促進剤として2−フェニル−4−メチルイミダゾール(四国化成工業(株)製、2P4MZ)0.7重量%とを秤量し、3本ロールにて分散混練し、真空下脱泡処理をしてペースト状の熱硬化性樹脂組成物を得た。
上述のペースト状の熱硬化性樹脂組成物を、回路パターンが形成された回路基板(コア材として、住友ベークライト(株)社製、品番ELC−4785GS、熱膨張係数(Tg以下)XY方向:11ppm、Z方向:16ppm)に塗布し、次いで半田バンプを有する半導体素子(サイズ縦15×横15×厚さ0.725mm)をフリップチップボンダーで260℃、10秒間加熱して搭載した。次に、オーブンで、150℃、120分間加熱してペースト状の熱硬化性樹脂組成物を硬化した。
そして、オーブンの冷却速度の条件を設定して、150〜60℃の温度範囲を25℃/hの冷却速度で冷却した後、30℃付近までを60℃/hほどで冷却して半導体装置を得た。ここで、温度は、オーブン雰囲気中の温度を示す。
半導体装置の製造工程において、冷却速度を以下のようにした以外は、実施例1と同様にした。
150〜60℃の範囲の冷却速度を、15℃/hとした。
半導体装置の製造工程において、冷却範囲を以下のようにした以外は、実施例1と同様にした。
150〜80℃の範囲を、実施例1と同様の冷却速度とし、80℃未満〜30℃については1℃/分で冷却した。
ペースト状の熱硬化性樹脂組成物として、以下のものを用いた以外は、実施例1と同様にした。
熱硬化性樹脂としてビスフェノールF型エポキシ樹脂(大日本インキ化学工業(株)製、EXA−830LVP、エポキシ当量161)76.3重量%と、フラックス活性を有する硬化剤として2,5−ジヒドロキシ安息香酸(東京化成工業製(融点200〜205℃))22.9重量%と、硬化促進剤として2−フェニル−4−メチルイミダゾール(四国化成工業(株)製)0.8重量%と、を秤量し、3本ロールにて分散混練し、真空下脱泡処理をしてペースト状の熱硬化性樹脂組成物を得た。
半導体装置の製造方法において、ペースト状の熱硬化性樹脂組成物を基板ではなく、半導体素子に塗布した以外は、実施例1と同様にした。
基板として、以下のものを用いた以外は、実施例1と同様にした。
基板として、コア材がBT(三菱ガス化学社製、品番CCL−HL832HS、熱膨張係数(Tg以下)XY方向:15ppm、Z方向:55ppm)であるものを用いた。
半導体装置の製造工程において、冷却速度を以下のようにした以外は、実施例1と同様にした。
150〜60℃の範囲の冷却速度を、5℃/hとした。
半導体装置の製造工程において、下記のペースト状の熱硬化性樹脂組成物を、予め半導体素子を基板に搭載させておいた半導体装置に注入して半導体パッケージを得た。
ペースト状の熱硬化性樹脂組成物は、熱硬化性樹脂としてビスフェノールF型エポキシ樹脂(大日本インキ化学工業(株)製、EXA−830LVP、エポキシ当量161)79.4重量%と、硬化剤としてフェノールノボラック19.8重量%と、硬化促進剤として2−フェニル−4−メチルイミダゾール(四国化成工業(株)製)0.8重量%と、を秤量し、3本ロールにて分散混練し、真空下脱泡処理をして得た。
得られた半導体装置の反りと、後述する耐リフロー試験後の半導体装置との反りを評価した。各符号は、以下の通りであった。
◎:反り量が、80μm以下であった。
○:反り量が、80μmを超え、100μm以下であった。
△:反り量が、100μmを超え、120μm以下であった。
×:反り量が、120μmを超えた。
JEDECレベル3、260℃ピークSMTリフロー(3回)の条件で耐リフロー試験を行った後の、半導体装置の剥離性および接続性を評価することにより、信頼性評価を行った。なお、評価は、n=20で行った。各符号は、以下の通りである。
剥離性
◎:全数剥離無かった。
○:剥離発生率が、5%未満であった。
△:剥離発生率が、5%以上、10%未満であった。
×:剥離発生率が、10%以上であった。
接続性
◎:接続率が、100%であった。
○:接続率が、100%未満(8/10以上)、95%以上(2/10以下)であった。
△:接続率が、80%を超え、95%未満であった。
×:接続率が、80%以下であった。
作業性を、比較例2の作業工数を基準(100)として、評価した。各符号は、以下の通りである。
◎:作業工数が、50以上、75以下であった。
○:作業工数が、75を超え、95以下であった。
△:作業工数が、95を超え、105以下であった。
×:作業工数が、105を超え、150以下であった。
実施例で得られたペースト状の熱硬化性樹脂組成物を150℃3時間にて硬化し、4mmX4mmX10mmの大きさのサンプルを作製する。次いで、TMA装置(SII社製)を用い、圧縮荷重:10g、昇温速度:10℃/分、測定温度範囲:−100℃〜300℃、によりガラス転移温度およびガラス転移温度以下の領域における平均線膨張係数を算出した。
また、実施例1〜6は、信頼性にも優れていた。これにより、半田バンプが保護されていることが示唆された。
また、実施例1〜6は、作業性にも優れていた。
(1) 基板または半導体素子の少なくとも一方に、フラックス活性を有するペースト状の熱硬化性樹脂組成物を塗布する塗布工程と、
前記基板と前記半導体素子とを前記ペースト状の熱硬化性樹脂組成物を介して電気的に接合する接合工程と、
前記ペースト状の熱硬化性樹脂組成物を加熱して硬化する硬化工程と、
前記硬化工程後に、10[℃/hour]以上、50[℃/hour]以下の冷却速度で冷却する冷却工程を有する、半導体装置の製造方法。
(2) 前記硬化工程において、前記ペースト状の熱硬化性樹脂組成物の硬化温度をTc[℃]としたとき、
前記冷却工程は、Tc[℃]以下、(Tc−90)[℃]以上の温度範囲を前記冷却速度で冷却する、(1)に記載の半導体装置の製造方法。
(3) 前記硬化温度(Tc)を150[℃]としたとき、
前記冷却工程は、150℃以下、60℃以上の温度範囲を前記冷却速度で冷却する、(2)に記載の半導体装置の製造方法。
(4) (Tc−90)[℃]未満の温度範囲においては、60[℃/hour]以上、120[℃/hour]以下の冷却速度で冷却する、(2)に記載の半導体装置の製造方法。
(5) 25℃以上、ガラス転移温度(Tg)以下の領域における、前記基板の厚さ方向の線膨張係数(α1)が、20ppm以下である、(1)に記載の半導体装置の製造方法。
(6) 25℃以上、ガラス転移温度(Tg)以下の領域における、前記基板の厚さ方向の線膨張係数(α1)が、5ppm以上である、(1)に記載の半導体装置の製造方法。
(7) 前記硬化工程後の前記ペースト状の熱硬化性樹脂組成物の硬化物のガラス転移温度が、50℃以上、150℃以下である、(1)に記載の半導体装置の製造方法。
(8) 前記硬化工程後の前記ペースト状の熱硬化性樹脂組成物の硬化物のガラス転移温度が、50℃以上、150℃以下である、(2)に記載の半導体装置の製造方法。
(9) 前記冷却工程は、Tc[℃]以下、(前記ペースト状の熱硬化性樹脂組成物の硬化物の前記ガラス転移温度−20)[℃]以上の温度範囲を前記冷却速度で冷却するものである、(8)に記載の半導体装置の製造方法。
(10) 25℃以上、ガラス転移温度(Tg)以下の領域における、前記硬化工程後の前記ペースト状の熱硬化性樹脂組成物の硬化物の線膨張係数が、5ppm/℃以上、60ppm/℃以下である、(1)に記載の半導体装置の製造方法。
(11) 前記冷却工程において、前記冷却速度が25[℃/hour]以下である、(1)に記載の半導体装置の製造方法。
(12) 第1の導電部を有する前記基板と、第2の導電部を有する前記半導体素子と、を用い、
前記接合工程は、前記ペースト状の熱硬化性樹脂組成物で覆った状態で、前記第1の導電部と前記第2の導電部とが半田接続するように、前記基板と前記半導体素子とを電気的に接合する、(1)に記載の半導体装置の製造方法。
(13) 前記第1の導電部および前記第2の導電部の、少なくとも一方は半田バンプである、(12)に記載の半導体装置の製造方法。
(14) 前記ペースト状の熱硬化性樹脂組成物は、熱硬化性樹脂と、フラックス活性剤とを含む、(1)に記載の半導体装置の製造方法。
(15) 前記熱硬化性樹脂の含有量は、前記ペースト状の熱硬化性樹脂組成物全体の5重量%以上、70重量%以下である、(14)に記載の半導体装置の製造方法。
(16) 前記フラックス活性剤の含有量は、前記ペースト状の熱硬化性樹脂組成物全体の0.1重量%以上、50重量%以下である、(14)に記載の半導体装置の製造方法。
(17) 前記フラックス活性剤は、分子中にカルボキシル基およびフェノール性水酸基を有する、(14)に記載の半導体装置の製造方法。
Claims (18)
- 基板または半導体素子の少なくとも一方に、フラックス活性を有するペースト状の熱硬化性樹脂組成物を塗布する塗布工程と、
前記基板と前記半導体素子とを前記ペースト状の熱硬化性樹脂組成物を介して電気的に接合する接合工程と、
前記ペースト状の熱硬化性樹脂組成物を加熱して硬化する硬化工程と、
前記硬化工程後に、10[℃/hour]以上、50[℃/hour]以下の冷却速度で冷却する冷却工程を有する、半導体装置の製造方法。 - 前記硬化工程において、前記ペースト状の熱硬化性樹脂組成物の硬化温度をTc[℃]としたとき、
前記冷却工程は、Tc[℃]以下、(Tc−90)[℃]以上の温度範囲を前記冷却速度で冷却する、請求項1に記載の半導体装置の製造方法。 - 前記硬化温度(Tc)を150[℃]としたとき、
前記冷却工程は、150℃以下、60℃以上の温度範囲を前記冷却速度で冷却する、請求項2に記載の半導体装置の製造方法。 - (Tc−90)[℃]未満の温度範囲においては、60[℃/hour]以上、120[℃/hour]以下の冷却速度で冷却する、請求項2に記載の半導体装置の製造方法。
- 25℃以上、ガラス転移温度(Tg)以下の領域における、前記基板の厚さ方向の線膨張係数(α1)が、20ppm以下である、請求項1に記載の半導体装置の製造方法。
- 25℃以上、ガラス転移温度(Tg)以下の領域における、前記基板の厚さ方向の線膨張係数(α1)が、5ppm以上である、請求項1に記載の半導体装置の製造方法。
- 前記硬化工程後の前記ペースト状の熱硬化性樹脂組成物の硬化物のガラス転移温度が、50℃以上、150℃以下である、請求項1に記載の半導体装置の製造方法。
- 前記硬化工程後の前記ペースト状の熱硬化性樹脂組成物の硬化物のガラス転移温度が、50℃以上、150℃以下である、請求項2に記載の半導体装置の製造方法。
- 前記冷却工程は、Tc[℃]以下、(前記ペースト状の熱硬化性樹脂組成物の硬化物の前記ガラス転移温度−20)[℃]以上の温度範囲を前記冷却速度で冷却するものである、請求項8に記載の半導体装置の製造方法。
- 25℃以上、ガラス転移温度(Tg)以下の領域における、前記硬化工程後の前記ペースト状の熱硬化性樹脂組成物の硬化物の線膨張係数が、5ppm/℃以上、60ppm/℃以下である、請求項1に記載の半導体装置の製造方法。
- 前記冷却工程において、前記冷却速度が25[℃/hour]以下である、請求項1に記載の半導体装置の製造方法。
- 第1の導電部を有する前記基板と、第2の導電部を有する前記半導体素子と、を用い、
前記接合工程は、前記ペースト状の熱硬化性樹脂組成物で覆った状態で、前記第1の導電部と前記第2の導電部とが半田接続するように、前記基板と前記半導体素子とを電気的に接合する、請求項1に記載の半導体装置の製造方法。 - 前記第1の導電部および前記第2の導電部の、少なくとも一方は半田バンプである、請求項12に記載の半導体装置の製造方法。
- 前記ペースト状の熱硬化性樹脂組成物は、熱硬化性樹脂と、フラックス活性剤とを含む、請求項1に記載の半導体装置の製造方法。
- 前記熱硬化性樹脂の含有量は、前記ペースト状の熱硬化性樹脂組成物全体の5重量%以上、70重量%以下である、請求項14に記載の半導体装置の製造方法。
- 前記フラックス活性剤の含有量は、前記ペースト状の熱硬化性樹脂組成物全体の0.1重量%以上、50重量%以下である、請求項14に記載の半導体装置の製造方法。
- 前記フラックス活性剤は、分子中にカルボキシル基およびフェノール性水酸基を有する、請求項14に記載の半導体装置の製造方法。
- 請求項1から17のいずれかに記載の半導体装置の製造方法で得られた半導体装置。
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