TW200921763A - Diffusion control in heavily doped substrates - Google Patents

Diffusion control in heavily doped substrates Download PDF

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Publication number
TW200921763A
TW200921763A TW97124443A TW97124443A TW200921763A TW 200921763 A TW200921763 A TW 200921763A TW 97124443 A TW97124443 A TW 97124443A TW 97124443 A TW97124443 A TW 97124443A TW 200921763 A TW200921763 A TW 200921763A
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TW
Taiwan
Prior art keywords
wafer
substrate
layer
highly doped
dopant
Prior art date
Application number
TW97124443A
Other languages
English (en)
Chinese (zh)
Inventor
Robert J Falster
Vladimir V Voronkov
Luca Moiraghi
Dong-Myun Lee
Chan-Rae Cho
Marco Ravani
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of TW200921763A publication Critical patent/TW200921763A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/15—Diffusion of dopants within, into or out of semiconductor bodies or layers from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249961—With gradual property change within a component

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  • Crystals, And After-Treatments Of Crystals (AREA)
TW97124443A 2007-06-29 2008-06-27 Diffusion control in heavily doped substrates TW200921763A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/771,683 US20090004458A1 (en) 2007-06-29 2007-06-29 Diffusion Control in Heavily Doped Substrates

Publications (1)

Publication Number Publication Date
TW200921763A true TW200921763A (en) 2009-05-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW97124443A TW200921763A (en) 2007-06-29 2008-06-27 Diffusion control in heavily doped substrates

Country Status (7)

Country Link
US (3) US20090004458A1 (https=)
EP (1) EP2162902A2 (https=)
JP (1) JP2010532585A (https=)
KR (1) KR20100029778A (https=)
CN (1) CN101689487B (https=)
TW (1) TW200921763A (https=)
WO (1) WO2009006183A2 (https=)

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KR102343145B1 (ko) 2015-01-12 2021-12-27 삼성디스플레이 주식회사 축합환 화합물 및 이를 포함한 유기 발광 소자
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US11295949B2 (en) * 2019-04-01 2022-04-05 Vishay SIliconix, LLC Virtual wafer techniques for fabricating semiconductor devices
JP7312402B2 (ja) * 2019-11-22 2023-07-21 株式会社アルバック 窒化物半導体基板の製造方法
CN111733378B (zh) * 2020-05-15 2022-12-13 中国兵器科学研究院宁波分院 一种钢表面的涂层结构及其制备方法
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Also Published As

Publication number Publication date
JP2010532585A (ja) 2010-10-07
WO2009006183A3 (en) 2009-02-26
US20090004458A1 (en) 2009-01-01
US20090252974A1 (en) 2009-10-08
CN101689487B (zh) 2011-12-28
WO2009006183A2 (en) 2009-01-08
US20110250739A1 (en) 2011-10-13
EP2162902A2 (en) 2010-03-17
KR20100029778A (ko) 2010-03-17
CN101689487A (zh) 2010-03-31

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