TW200830549A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW200830549A
TW200830549A TW096141191A TW96141191A TW200830549A TW 200830549 A TW200830549 A TW 200830549A TW 096141191 A TW096141191 A TW 096141191A TW 96141191 A TW96141191 A TW 96141191A TW 200830549 A TW200830549 A TW 200830549A
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TW
Taiwan
Prior art keywords
source
substrate
electrode
gate
pads
Prior art date
Application number
TW096141191A
Other languages
English (en)
Other versions
TWI355741B (zh
Inventor
Kazutaka Takagi
Original Assignee
Toshiba Kk
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Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200830549A publication Critical patent/TW200830549A/zh
Application granted granted Critical
Publication of TWI355741B publication Critical patent/TWI355741B/zh

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Description

200830549 九、發明說明 【發明所屬之技術領域】 本發明是關於半導體裝置，尤其是；關於在複數電極 的配置上具有特徵的半導體裝置。 【先前技術】 作爲源極電極、閘極電極及汲極電極具備分別藉由複 數指針所形成的指針型場效電晶體（FET : Field Effect Transistor)的半導體裝置，眾知有專利文獻1所述者。 專利文獻1:日本特開平1 1 -8 73 67號公報 第5圖是表示用以說明專利文獻1的半導體裝置的電極 構造的圖式。 亦即，如第5 ( a )圖所示地，該半導體裝置是在其長 方形的基板53上的大約中央部，互相地嚙合般地排列有閘 極指針電極2，源極指針電極3及汲極指針電極4。亦即， 在源極指針電極3與汲極指針電極4之間排列有能重複閘極 指針電極2被配置的關係。連接有閘極指針電極2的閘極墊 片5 0與連接有源極指針電極3的源極墊片51沿著基板53的 一邊（圖之下邊）交互地被排列。又，連接有汲極指針電 極4的汲極墊片52沿著排列於基板53的相對邊（圖之上邊 )° 如第5 ( b )圖所示地，基板5 3是在其背面形成有作爲 接地的金屬製接地板54。在基板53的輸入側與輸出側，有 輸入側匹配電路及輸出側（未圖示）分別所形成的輸入側 -4- 200830549 基板55及輸出側基板5 6設於表面上。接地板5 4是其一部分 在輸入側基板55及基板53之間形成露出於基板表面。 源極墊片51是藉由引線57被搭接於接地板54的露出部 58，藉由此，源極電極被接地。又，閘極墊片50是經由引 線5 9被連接於輸入側基板55上的輸入用匹配電路，而汲極 墊片52是利用引線60、61被連接於輸出側基板56上的輸出 用匹配電路。 又，習知，在此種多指針型FET中，作爲源極墊片經 由導孔（VIA )被接地的構造的半導體裝置，眾知有專利 文獻2所述者。 專利文獻2:日本特開平H-283 996號公報 在表示於上述的第5圖的習知半導體裝置中，連接輸 入側基板55上的輸入用匹配電路與閘極墊片50的引線59， 是橫跨接地板的露出部5 8而被連接之故，因而成爲需要僅 相當於露出部5 8的寬度的分量還長的引線長度。結果，閘 極電極的輸入電感變大，有降低諧振頻率的缺點。所以， 對於高頻率的動作無法構成匹配電路。 又，重疊閘極電極的指針部與源極電極的指針部的部 分，亦即，利用重疊層62的寄生容量，是對FET的增益有 很大影響。 第6圖是表示用以說明專利文獻2的半導體裝置的電極 構造的圖式。如第6圖所示地，該半導體裝置，是閘極墊 片50與源極墊片51的配置與構造爲與表示於第5圖的半導 體裝置不相同。亦即，在表示於第6圖的半導體裝置中， -5- 200830549 閘極墊片50與源極墊片51是沿著基板53的下邊，被排列成 兩列。源極墊片51是經由導孔63連接於設在基板53背面的 金屬製接地板（未圖示）。閘極墊片5 0是對於源極墊片5 1 ，配置於此些之間的位置般地，沿著基板53下邊偏離地配 置。閘極墊片50是分別藉由通過鄰接的源極墊片5 1之間的 閘極配線65，被連接於各閘極指針電極2。又，在第6圖中 ，在對應於表示於第5圖的半導體裝置的構成部分的部分 p 賦予同一號碼。 在表示於第6圖的習知裝置中，閘極墊片50及閘極電 極2間爲藉由閘極配線65被連接之故，因而閘極的配線長 也變長，而令輸入電感會變大。 如此，本發明是鑑於上述課題，其目的是在提供具有 小輸入電感的FET。 【發明內容】 • 依照用以達成上述目的的本發明的一態樣，提供一種 半導體裝置，其特徵爲：具備：主基板；及在主基板上朝 . 所定方向排列的複數支源極指針電極；及在複數支源極指 _ 針電極，分別隔著所定間隔所排列的複數支汲極指針電極 ;及排列於複數支源極指針電極與複數支汲極指針電極之 間的複數支閘極指針電極；及在複數支指針電極排列的一 方側隔著所定間隔所排列的複數個源極墊片；及排列於複 數個源極墊片之間的複數個汲極墊片；及在複數支指針電 極排列的另一方側隔著所定間隔所排列的複數個閘極墊片 -6- 200830549 ;及在複數個源極墊片，連接所定支數的源極指針電極的 源極電極配線；及在複數個汲極墊片，連接所定支數的汲 極指針電極的汲極電極配線；及在複數個閘極墊片，連接 所定支數的閘極指針電極的閘極電極配線。 【實施方式】 以下，參照圖式，說明本發明的實施形態。在以下圖 ρ 式的記載中，在同一或類似部分賦予同一或類似的符號。 但是’圖式是模式者，應注意與現實者不相同的情形，又 ，當然在圖式互相間也包含著互相的尺寸的關係或比率不 相同的部分。 又，表示於以下的實施形態，是例示用以具體化本發 明的技術性思想的裝置或方法者，本發明的技術性思相是 並未將各構成零件的配置等特定於下述者。本發明的技術 性思想是在申請專利範圍中，可加以種種的變更。 # 在以下的說明中，半導體元件是被形成在Sic基板、
GaN/SiC基板、AlGaN/GaN/SiC基板、金剛石基板、藍寶 . 石基板所選擇的基板上。 尤其是，例如在使用AlGaN/GaN/SiC基板的情形，半 導體元件是作爲利用在異質結果面所誘起的二維氣體（ 2DEG ： Two Dimensional Electron Gas )中的高電子移動 度的高電子移動度電晶體（HEMT : High Electron Mobility Transistor)所構成。又，例如，使用 GaN/SiC基 板時，半導體元件是可構成作爲利用有特基閘極（ 200830549
Schottky Gate)的金屬一半導體（MES: Metal Semiconductor ) FET o (第1實施形態） 第l圖是表示本發明的第1實施形態的半導體裝置的電 極構造的俯視圖。又，第2圖是表示用以說明本發明的第1 實施形態的半導體裝置的一部分構成的立體圖。 本發明的第1實施形態的半導體裝置是如第1圖及第2 圖所示地，具備：主基板1 ;及在主基板1上朝所定方向排 列的複數支源極指針電極3 ;及在複數支源極指針電極3， 分別隔著所定間隔所排列的複數支汲極指針電極4 ;及排 列於複數支源極指針電極3與複數支汲極指針電極4之間的 複數支閘極指針電極2 ;及在複數支指針電極排列的一方 側隔著所定間隔所排列的複數個源極墊片6 ;及排列於複 數個源極墊片6之間的複數個汲極墊片7 ;及在複數支指針 電極排列的另一方側隔著所定間隔所排列的複數個閘極墊 片5 ;及在複數個源極墊片6，連接所定支數的源極指針電 極3的源極電極配線（LS、NS、Μ );及在複數個汲極墊 片7，連接所定支數的汲極指針電極4的汲極電極配線（ LD、ND、Ρ );及在複數個閘極墊片5，連接所定支數的 閘極指針電極2的閘極電極配線LG。 又，如第1圖所示地，源極電極配線（LS、NS、Μ ) 與汲極電極配線（LD、ND、Ρ )，是具有一方橫跨另一方 的覆蓋或空氣橋接配線部1 5。 -8 - 200830549 又，如第1圖及第2圖所示地，具備；在配置於主基板 1上的複數個閘極墊片5排列側鄰接配置的輸入側匹配電路 基板8;及連接輸入側匹配電路基板8上的輸出端子8-1與 閘極墊片5的引線9 ;及在配置於主基板1上的複數個源極 墊片6與複數個汲極墊片7排列側隔著所定間隔所配置的輸 出側匹配電路基板10 ;及連接輸出側匹配電路基板10上的 輸入端子10-1與汲極墊片7的引線11 ;及共通地配置於主 基板1，輸入側匹配電路基板8及輸出側匹配電路基板10的 背面，一部分經由主基板1與輸出側匹配電路基板1 0間具 有露出於主基板1表面的露出部14的接地板12;及在露出 部14連接上述源極墊片6的引線13。 本發明的第1實施形態的半導體裝置是多指針型FET ，如第1圖所示地，在主基板1上交互地排列有複數源極指 針電極3與複數汲極指針電極4。又，在任意鄰接的一對源 極指針電極3與汲極指針電極4之間配置有一支閘極指針電 極2。 在此些各指針電極排列的一方側，例如在第1圖的上 邊側，沿著指針電極排列交互地排列有矩形的源極墊片6 及汲極墊片7。另一方面，在指針電極排列的另一方側， 何如在第1圖的下邊側，排列有矩形的閘極墊片5。 此些的各閘極墊片5、源極墊片6、汲極墊片7與各閘 極指針電極2、源極指針電極3、汲極指針電極4的位置關 係是如下述。 亦即，在源極墊片6的下部，除了源極指針電極3之外 -9- 200830549 ，也配置汲極指針電極4。同樣地，在汲極墊片7的下部， 除了汲極指針電極4之外，也配置源極指針電極3。 源極墊片6與源極指針電極3的連接是如下地進行。亦 即，在汲極墊片7的下側，排列於指針電極排列方向的墊 片寬的範圍內的例如4支源極指針電極3，是利用匯流排線 源極電極配置LS共通連接有此些的上端部，而在該匯流排 線源極電極配線LS的左右兩端部，利用形成於主基板1的 表面的源極電極配線Μ被連接於汲極墊片7兩側的源極墊 片6。 又，在源極墊片6的下側，排列於指針電極排列方向 的墊片寬的範圍內的例如兩支源極指針電極3，是分別用 覆蓋源極電極配線NS被連接於源極墊片6。 又，汲極墊片7與汲極指針電極4的連接是如下地進行 。亦即，在源極墊片6的下側，排列的指針電極排列方向 的墊片寬的範圍內的例如3支汲極指針電極4，是利用朝指 針電極排列方向延長所形成的匯流排線汲極電極配線LD 共通連接有此些的上端部，而在該匯流排線汲極電極配線 LD的左右兩端部，利用覆蓋汲極電極配線Ρ被連接於源極 墊片6兩側的汲極墊片7。 又，在汲極墊片7的下側，排列於指針電極排列方向 的墊片寬的範圍內的例如3支汲極指針電極4，是分別利用 覆蓋汲極電極配線ND被連接於汲極墊片7。 又，閘極墊片5與閘極指針電極2的連接是如下地進行 。亦即，連續的6支閘極指針電極2，是藉由朝指針電極排 -10- 200830549 列方向延長所形成的匯流排線閘極電極配線LG共通連接 有此些的下端部，而匯流排線閘極電極配線LG的中央部 被連接於配置在近旁的閘極墊片5。 以下，參照第2圖，針對於各閘極墊片5、源極墊片6 、汲極墊片7與輸入側基板8及輸出側基板10的連接加以說 明。 如第2圖所示地，輸入側基板8及輸出側基板10，是與 _ 基板1之同時，在此些背面形成有金屬製接地板1 2。又， 在接地板1 2，在基板1與輸出側基板1 0之間，形成有露出 於此些的表面的凸狀露出部14。該接地板12，是對於形成 於主基板1，輸入側基板8及輸出側基板1 0上的電路功能作 爲共通的接地電位。 如第2圖所示地，閘極墊片5是設於主基板1的輸入側 ，而經由引線9被連接於形成在輸入側基板8上的輸入匹配 電路（輸出端子8-1 )。 • 源極墊片6是經由引線13被連接於接地板12的露出部 14。又，汲極墊片7是分別經由引線11被連接於形成在輸 „ 出側基板1 0上的輸出匹配電路（輸入端子1 〇-1 )。 ^ 如此地，在本發明的第1實施形態的半導體裝置，將 源極墊片6在基板1中配置於與汲極墊片7相同側，不是如 將接地板1 2的露出部1 4設於FET的輸入側而是設於輸出側 ，結果，可縮短連接閘極墊片5與輸入側基板8上的電路的 引線9的長度。 又，結果，連接形成於汲極墊片7與輸出側基板1 0上 -11- 200830549 的輸出指針電極（輸入端子10-1 )的引線11，是橫跨接地 板12的露出部14被配線之後，因而其長度是變長，FET的 輸出電感變大。但是一般，FET的輸出阻抗是具有比輸入 阻抗數倍以上的値之故，因而依輸出電感的增分對於FET 的特性的影響，是對輸入電感相比較並不深刻。 又，在第1實施形態的半導體裝置中，令作爲連接汲 極墊片7與汲極指針電極4的汲極電極配線（LD、ND、P) 的配線構件，及作爲連接源極墊片6與源極指針電極3的源 極電極配線（LS、NS、Μ )的配線構件所交叉的部分，亦 即，覆蓋或空氣橋接配線部15，配置於源極墊片6及汲極 墊片7的近旁。 一方面，不會產生閘極電極配線LG與汲極電極配線 (LD、ND、Ρ )之間的覆蓋，或閘極電極配線LG與源極 電極配線（L S、N S、Μ )之間的覆蓋。 因此，在第1實施形態的半導體裝置中，起因於閘極 電極配線LG與汲極電極配線（LD、ND、Ρ )之間的重疊 的浮游容量，或起因於閘極電極配線LG與源極電極配線 (LS、NS、Μ)之間的重疊的浮游容量是不會發生。 依照本發明的第1實施形態的半導體裝置，在很難形 成氮化鎵（GaN )或碳化矽（81〇等的導引的半導體裝 置，也可成爲形成接地電極。 依照本發明的第1實施形態，就可縮短連接閘極墊片5 與輸入用匹配電路的引線長度之故，因而可提供低輸入電 感的半導體裝置。 -12- 200830549 (第2實施形態） 第3圖是表示本發明的第2實施形態的半導體裝置的電 極構造的俯視圖。又，第4圖是表示用以說明本發明的第2 實施形態的半導體裝置的一部分構成的立體圖。 本發明的第2實施形態的半導體裝置是如第3圖及第4 圖所示地，具備：主基板17 ;及在主基板17上朝所定方向 排列的複數支源極指針電極3 ;及在複數支源極指針電極3 ，分別隔著所定間隔所排列的複數支汲極指針電極4 ;及 排列於複數支源極指針電極3與複數支汲極指針電極4之間 的複數支閘極指針電極2 ;及在複數支指針電極排列的一 方側隔著所定間隔所排列的複數個源極墊片6 ;及排列於 複數個源極墊片6之間的複數個汲極墊片7 ;及在複數支指 針電極排列的另一方側隔著所定間隔所排列的複數個閘極 墊片5 ;及在複數個源極墊片6，連接所定支數的源極指針 電極3的源極電極配線（LS、NS、Μ );及在複數個汲極 墊片7，連接所定支數的汲極指針電極4的汲極電極配線（ LD、ND、Ρ );及在複數個閘極墊片5，連接所定支數的 閘極指針電極2的閘極電極配線LG。 又，如第3圖所示地，源極電極配線（LS、NS、Μ ) 與汲極電極配線（LD、ND、Ρ )，是具有一方橫跨另一方 的覆蓋或空氣橋接配線部1 5。 又，如第3圖及第4圖所示地，具備；在配置於主基板 17上的複數個閘極墊片5排列側鄰接配置的輸入側匹配電 -13- 200830549 路基板8 ;及連接輸入側匹配電路基板8上的輸出端子8-1 與閘極墊片5的引線9 ;及在配置於主基板1 7上的複數個源 極墊片6與複數個汲極墊片7排列側隔著所定間隔所配置的 輸出側匹配電路基板1 〇 ;及連接輸出側匹配電路基板1 〇上 的輸入端子10-1與汲極墊片7的引線11 ;及貫通主基板1， 而與複數個源極墊片6分別連接的複數個導孔1 6 ;及共通 地配置於主基板17，輸入側匹配電路基板8及輸出側匹配 ϋ 電路基板1 〇的背面，經由複數個導孔1 6而與複數個源極墊 片6連接的接地板12。 在上述第1實施形態的半導體裝置中’源極墊片6是經 由搭接用引線1 3被接地於接地板1 2的露出部1 4。本發明的 第2實施形態的半導體裝置中，如第3圖及第4圖所示地， 源極墊片6是經由形成於源極墊片6下的主基板17內的導孔 16被連接於接地板12，而被接地。其他構成是與第1圖及 第2圖同樣。 φ 本發明的第2實施形態的半導體裝置，是源極墊片6的 位置爲被置換成表示於第5圖、第6圖的習知裝置的汲極墊 I 片52的位置，且任源極墊片6形成有導孔16之故，因而可 縮短閘極墊片5與閘極指針電極2之間的配線長。 又，在閘極電極2，不會產生其他源極電極3，汲極電 極4的覆蓋之故，因而也可減小閘極指針電極2的浮游容量 之故，因而可減小對於FET的頻率特性的影響。 依照本發明的第2實施形態，就可縮短連接閘極墊片 與輸入用匹配電路的引線長度之故，因而可提供低輸入電 -14- 200830549 感的半導體裝置。 (其他的實施形態） 如上述地，本發明是藉由第1至第2實施形態所記載， 惟該揭示的一部分所成的論述及圖式是並不限定本發明者 。由該揭示可知熟習該項技術者可做各種代替實施形態， 實施例及運用技術。 又，本發明是並不被限定於上述實施形態本身者，而 在實施階段中在未超越其要旨的範圍變更構成要素可加以 具體化。在上述實施形態中，在基板上，源極墊片6及汲 極墊片7的順序是被更換而被配置也可以，在此時候，源 極指針電極3及汲極指針電極4的順序是也被更換而被配置 。上述說明的主基板1、1 7的邊長度，或各指針的長度及 配置的間隔，或各墊片的邊長度及配置的間隔，或覆蓋或 空氣橋接配線部1 5的配線構件的重疊構造，導孔1 6的直徑 等的値是可做種種變更。 又，利用被揭示於上述的實施形態的複數構成要素的 適當組合，可達成種種發明。例如，由表示於實施形態的 全構成要素刪除幾個構成要素也可以。又，適當地組合不 相同的實施形態的構成要素也可以。 在第1至第2實施形態中，作爲使用於半導體元件的主 基板1、17，例舉SiC基板，惟並不被限定於此者，而在 GaN/SiC基板、AlGaN/GaN/SiC基板、金剛石基板等的散 熱性良好的基板時，利用形成導孔1 6也可作成接地。 -15- 200830549 在矽或GaAs基板的情形，用以形成導孔的加工成爲 容易，惟使用用以形成SiC基板或藍寶石基板等的導孔的 加工使用困難的基板的情形也有效地適用。 如此地’本發明當然也包括在此未記載的各種實施形 態等。因此，本發明的技術性範圍並不是僅由上述的說明 藉由妥當的申請專利範圍的發明特定事項所決定者。 【圖式簡單說明】 第1圖是表示本發明的第1實施形態的半導體裝置的電 極構造的俯視圖。 第2圖是表示用以說明本發明的第丨實施形態的半導體 裝置的一部分的構成的立體圖。 第3圖是表示本發明的第2實施形態的半導體裝置的電 極構造的俯視圖。 第4圖是表示用以說明本發明的第2實施形態的半導體 裝置的一部分的構成的立體圖。 第5 ( a )圖及第5 ( b )圖是表示用以說明習知的半導 體裝置電極構造的圖式。 第6(a)圖及第6(b)圖是表示用以說明習知的其他 的半導體裝置電極構造的圖式。 【主要元件符號說明】 1、17 :主基板 2 :閘極指針電極 -16- 200830549 3 :源極指針電極 4 :汲極指針電極 5 :閘極墊片 6 :源極墊片 7 :汲極墊片 8 :輸入側匹配電路基板 9 :引線 p 1 0 :輸出側匹配電路基板 I 〇 -1 :輸入端子 II 、 13 :引線 12 :接地板 1 4 :露出部 L G :閘極電極配線 L S :匯流排源極電極配線 L S、N S、Μ :源極電極配線 _ LD、ND、Ρ :汲極電極配線 1 6 :導孔 . 8 - 1 :輸出端子 -17-

Claims (1)

  1. 200830549 十、申請專利範圍 1· 一種半導體裝置，其特徵爲： 具備： 主基板；及 在上述主基板上朝所定方向排列的複數支源極指針電 極；及 在上述複數支源極指針電極，分別隔著所定間隔所排 列的複數支汲極指針電極；及 排列於上述複數支源極指針電極與上述複數支汲極指 針電極之間的複數支閘極指針電極；及 在上述複數支指針電極排列的一方側隔著所定間隔所 排列的複數個源極墊片；及 排列於上述複數個源極墊片之間的複數個汲極墊片； 及 在上述複數支指針電極排列的另一方側隔著所定間隔 所排列的複數個閘極墊片；及 在上述複數個源極墊片，連接所定支數的上述源極指 針電極的源極電極配線；及 在上述複數個汲極墊片，連接所定支數的上述汲極指 針電極的汲極電極配線；及 在上述複數個閘極墊片，連接所定支數的上述閘極指 針電極的閘極電極配線。 2.如申請專利範圍第1項所述的半導體裝置，其中 ，上述源極電極配線與上述汲極電極配線，是具有一方橫 •18- 200830549 跨另一方的覆蓋或空氣橋接配線部分。 3 .如申請專利範圍第1項所述的半導體裝置，其中 ，具備： 在配置於上述主基板上的上述複數個閘極墊片排列側 鄰接配置的輸入側匹配電路基板；及 連接上述輸入側匹配電路基板上的輸出端子與上述閘 極墊片的第一引線；及 在配置於上述主基板上的上述複數個源極墊片與上述 複數個汲極墊片排列側隔著所定間隔所配置的輸出側匹配 電路基板；及 連接上述輸出側匹配電路基板上的輸入端子與上述汲 極墊片的第二引線；及 具有共通地配置於上述主基板，上述輸入側匹配電路 基板及上述輸出側匹配電路基板的背面，一部分經由上述 主基板與上述輸出側匹配電路基板間而露出於上述主基板 表面的露出部的接地板；及 在上述露出部連接上述源極墊片的第三引線。 4.如申請專利範圍第1項所述的半導體裝置，其中 ，具備： 在配置於上述主基板上的上述複數個閘極墊片排列側 鄰接配置的輸入側匹配電路基板；及 連接上述輸入側匹配電路基板上的輸出端子與上述閘 極墊片的第一引線；及 在配置於上述主基板上的上述複數個源極墊片與上述 -19- 200830549 複數個汲極墊片排列側鄰接配置的輸出側匹配電路基板； 及 連接上述輸出側匹配電路基板上的輸入端子與上述汲 極墊片的第二引線；及 貫通上述主基板，而與上述複數個源極墊片分別連接 的複數個導孔；及 共通地配置於上述主基板，上述輸入側匹配電路基板 及上述輸出側匹配電路基板的背面，經由上述複數個導孔 而與上述複數個源極墊片連接的接地板。 5 ·如申請專利範圍第1項所述的半導體裝置，其中 ’上述主基板是由 SiC 基板、GaN/SiC 基板、 AlGaN/GaN/SiC基板、金剛石基板、藍寶石基板所選擇的 基板。
    -20-
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TWI760712B (zh) * 2019-03-29 2022-04-11 日商東芝股份有限公司 半導體裝置及半導體裝置之製造方法
TWI798659B (zh) * 2020-09-11 2023-04-11 愛爾蘭商納維達斯半導體有限公司 用於氮化鎵功率積體電路之熱增強電子封裝及半橋組態

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US20100237437A1 (en) 2010-09-23
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