CN102270659B - 一种多栅指GaN HEMTs - Google Patents
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Abstract
本发明公开了一种多栅指GaN HEMTs,属于半导体器件技术领域。该多栅指GaN HEMTs的栅指分为等温栅指和变温栅指,等温栅指的各个栅指之间的距离为变温栅指的各个栅指之间的距离为Lgg,OUT,i=Lgg,IN+a(4i3+3i2+i)。在上述基础上对GaN HEMTs的各个栅指位置进行设计,使得其在工作时,温度最高的栅指的温度降低,即GaN HEMTs的沟道温度降低,提高了GaN HEMTs的输出功率,延长了GaN HEMTs的工作寿命。
Description
技术领域
本发明涉及半导体器件技术领域,特别涉及一种多栅指GaN HEMTs。
背景技术
GaN HEMTs在功率放大领域具有非常广泛的应用前景,GaN HEMTs在工作过程中,受自热效应影响,沟道温度非常高,这也是导致GaN HEMTs性能下降、寿命缩短的主重要因素。目前,GaN HEMTs结构设计中,栅指的栅间距都是相等的,参见附图1,但是,由于各个栅指下方热源区互相耦合情况不同,并且,不同位置栅指散热条件不同,导致GaN HEMTs在工作时,各个栅指的温度不相等,内部栅指温度较高,外部栅指温度较低,参见附图2,而GaN HEMTs的沟道温度与温度最高的栅指的温度相同。较高的沟道温度将导致GaN HEMTs的输出功率减小,失效加快寿命缩短。为了抑制GaN HEMTs的自热效应,需要降低GaN HEMTs的沟道温度,即降低GaN HEMTs工作时温度最高的栅指的温度。
发明内容
为了解决上述问题,本发明提出了一种通过重新安排GaN HEMTs各个栅指之间的距离,使得其在工作时,温度最高的栅指的温度降低,从而,使GaN HEMTs沟道温度降低的多栅指GaN HEMTs。
本发明提供的多栅指GaN HEMTs,包括栅指,所述栅指分为等温栅指和变温栅指,
所述等温栅指的各个栅指之间的距离为:
其中,
Lgg,IN-多栅指GaN HEMTs等温栅指的各个栅指之间的距离,μm;
n1-多栅指GaN HEMTs等温栅指的单侧栅指间间隔的数量;
L0-等栅间距的GaN HEMTs的各个栅指之间的距离,μm;
WIN-等栅间距的GaN HEMTs等温栅指的单侧总长度,μm;
Wop-多栅指GaN HEMTs与等栅间距的GaN HEMTs相比,等温栅指的单侧补偿长度,μm;
所述变温栅指的各个栅指之间的距离为:
Lgg,OUT,i=Lgg,IN+a(4i3+3i2+i),
其中,
i-从多栅指GaN HEMTs中心向边缘对变温栅指之间的间隔进行计数时对应的索引值;
n2-多栅指GaN HEMTs的变温栅指的单侧栅指间间隔的数量;
i的取值范围从1到n2;
L0-等栅间距的GaN HEMTs各个栅指之间的距离,μm;
Lgg,OUT-多栅指GaN HEMTs变温栅指的各个栅指之间的距离,μm;
WOUT-多栅指GaN HEMTs变温栅指的单侧总长度,μm;
a-多栅指GaN HEMTs变温栅指的各个栅指之间距离的渐变系数。作为优选,所述a的计算公式为
其中,
a0-与用于制造GaN HEMTs的材质的热特性有关,取值范围从0到0.5;
Lgg,IN-多栅指GaN HEMTs等温栅指的各个栅指之间的距离;
n2-多栅指GaN HEMTs变温栅指的单侧栅指间间隔的数量。
本发明提供的多栅指GaN HEMTs的有益效果在于:
本发明提供的多栅指GaN HEMTs,对GaN HEMTs的各个栅指位置进行设计,使得其在工作时,温度最高的栅指的温度降低,即GaN HEMTs的沟道温度降低,提高了GaN HEMTs的输出功率,延长了GaN HEMTs的工作寿命。
附图说明
图1为现有等栅间距的GaN HEMTs结构示意图;
图2为现有等栅间距的GaN HEMTs单侧的栅指温度-X-方向位置曲线图;
图3为本发明实施例提供的GaN HEMTs结构示意图;
图4为本发明实施例提供的GaN HEMTs单侧各个栅指位置与现有等栅间距的GaN HEMTs各个栅指位置的比较示意图;
图5为本发明实施例提供的GaN HEMTs单侧的栅指温度-X-方向位置曲线图。
具体实施方式
为了深入了解本发明,下面结合附图及具体实施例对本发明进行详细说明。
为了计算和表达方便,本发明实施例将下述计算数值在误差范围内进行了适当的修约。
参见附图3,本发明实施例提供的多栅指GaN HEMTs包括20个栅指,该20个栅指分为等温栅指1和变温栅指2,
参见附图4,
等温栅指1的各个栅指之间的距离为
其中,
Lgg,IN-本发明实施例提供的多栅指GaN HEMTs等温栅指的各个栅指之间的距离,μm;
n1-本发明实施例提供的多栅指GaN HEMTs等温栅指的单侧栅指间间隔的数量,本实施例中n1=7;
L0-现有等栅间距的GaN HEMTs各个栅指之间的距离,本实施例中L0=30μm,现有等栅间距的GaN HEMTs各个栅指之间的距离之和为30×19=570μm;
WIN-现有等栅间距的GaN HEMTs等温栅指的单侧总长度,本实施例中WIN=195μm;
Wop-本发明实施例提供的多栅指GaN HEMTs与现有等栅间距的GaNHEMTs相比,等温栅指的单侧补偿长度,本实施例中,Wop=13μm;
将上述n1=7,L0=30μm,WIN=195μm,Wop=13μm分别代入公式
得出,Lgg,IN=32μm。
变温栅指的各个栅指之间的距离为
Lgg,OUT,i=Lgg,IN+a(4i3+3i2+i)
其中,
i-从本发明实施例提供的多栅指GaN HEMTs中心向边缘对变温栅指之间的间隔进行计数时对应的索引值;
n2-本发明实施例提供的多栅指GaN HEMTs变温栅指的单侧栅指间间隔的数量,本实施例中,n2=3;
i的取值范围从1到n2,本实施例中,i的取值可以分别为1、2、3;
L0-现有等栅间距的GaN HEMTs各个栅指之间的距离,本实施例中,Lgg,IN=32μm;
Lgg,OUT-本发明实施例提供的多栅指GaN HEMTs变温栅指的各个栅指之间的距离,本实施例中,分别为附图4中所示的Lgg,OUT,1、Lgg,OUT,2、Lgg,OUT,3,μm;
WOUT-本发明实施例提供的多栅指GaN HEMTs变温栅指的单侧总长度,本实施例中,WOUT=74.8μm;
a-本发明实施例提供的多栅指GaN HEMTs变温栅指的各个栅指之间距离的渐变系数,本实施例中,a=-0.1。
将Lgg,IN=32μm,a=-0.1,i分别为1、2、3代入公式
Lgg,OUT,i=Lgg,IN+a(4i3+3i2+i)
得出,
Lgg,OUT,1=32-0.1×(4×13+3×12+1)=32-0.8=31.2μm
Lgg,OUT,2=32-0.1×(4×23+3×22+2)=32-4.6=27.4μm
Lgg,OUT,3=32-0.1×(4×33+3×32+3)=32-13.8=16.2μm验证,得
其中,a的计算公式为
其中,
a0-与用于制造GaN HEMTs的材质的热特性有关,取值范围从0到0.5,本实施例中,a0≈0.0844;
Lgg,IN-本发明提供的多栅指GaN HEMTs等温栅指的各个栅指之间的距离,μm;
n2-本发明实施例提供的多栅指GaN HEMTs变温栅指的的单侧栅指间间隔的数量,本实施例中,n2=3;
将a0=0.0844,Lgg,IN=32μm,n2=3代入公式
得出,
由于计算过程中修约造成的误差,为了计算和表达方便,本发明实施例对上述计算所得的Lgg,OUT,3进行了适当调整,将Lgg,OUT,3由16.2μm调整为18.4μm。
即,
Lgg,IN=32μm,
Lgg,OUT,1=31.2μm,Lgg,OUT,2=27.4μm,Lgg,OUT,3=18.4μm。
以本发明提供的多栅指GaN HEMTs在x方向的中轴线为纵轴,计算本发明提供的多栅指GaN HEMTs单侧的各个栅指在x方向的位置坐标分别为
x1=16μm、x2=48μm,x3=80μm,x4=112μm,x5=144μm,x6=176μm,x7=208μm,x8=239.2μm,x9=266.6μm,x10=285μm。
本发明提供的多栅指GaN HEMTs另一侧的各个栅指在x方向的位置坐标分别为
x1=-16μm、x2=-48μm,x3=-80μm,x4=-112μm,x5=-144μm,x6=-176μm,x7=-208μm,x8=-239.2μm,x9=-266.6μm,x10=-285μm。
本发明提供的多栅指GaN HEMTs各个栅指之间的距离之和为285×2=570μm。
附图5为本发明实施例提供的GaN HEMTs单侧的栅指温度-X-方向位置曲线图,与附图2进行比较,在附图5中温度最高的栅指的最高温度降低,即GaNHEMTs的沟道温度降低。
本发明提供的多栅指GaN HEMTs,对GaN HEMTs的各个栅指位置进行设计,使得其在工作时,温度最高的栅指的温度降低,即GaN HEMTs的沟道温度降低,提高了GaN HEMTs的输出功率,延长了GaN HEMTs的工作寿命。
以上所述的具体实施方式,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施方式而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (1)
1.一种多栅指GaN HEMTs,包括栅指,其特征在于,所述栅指分为等温栅指和变温栅指,
所述等温栅指的各个栅指之间的距离为:
其中,
Lgg,IN-多栅指GaN HEMTs等温栅指的各个栅指之间的距离,μm;
n1-多栅指GaN HEMTs等温栅指的单侧栅指间间隔的数量;
L0-等栅间距的GaN HEMTs的各个栅指之间的距离,μm;
WIN-等栅间距的GaN HEMTs等温栅指的单侧总长度,μm;
Wop-多栅指GaN HEMTs与等栅间距的GaN HEMTs相比,等温栅指的单侧补偿长度,μm;
所述变温栅指的各个栅指之间的距离为:
Lgg,OUT,i=Lgg,IN+a(4i3+3i2+i),
其中,
i-从多栅指GaN HEMTs中心向边缘对变温栅指之间的间隔进行计数时对应的索引值;
n2-多栅指GaN HEMTs的变温栅指的单侧栅指间间隔的数量;
i的取值范围从1到n2;
L0-等栅间距的GaN HEMTs各个栅指之间的距离,μm;
Lgg,OUT-多栅指GaN HEMTs变温栅指的各个栅指之间的距离,μm;
WOUT-多栅指GaN HEMTs变温栅指的单侧总长度,μm;
a-多栅指GaN HEMTs变温栅指的各个栅指之间距离的渐变系数;
所述a的计算公式为
其中,
a0-与用于制造GaN HEMTs的材质的热特性有关,取值范围从0到0.5;
Lgg,IN-多栅指GaN HEMTs等温栅指的各个栅指之间的距离;
n2-多栅指GaN HEMTs变温栅指的单侧栅指间间隔的数量。
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