WO2021017348A1 - Igbt物理模型参数提取方法 - Google Patents

Igbt物理模型参数提取方法 Download PDF

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WO2021017348A1
WO2021017348A1 PCT/CN2019/121527 CN2019121527W WO2021017348A1 WO 2021017348 A1 WO2021017348 A1 WO 2021017348A1 CN 2019121527 W CN2019121527 W CN 2019121527W WO 2021017348 A1 WO2021017348 A1 WO 2021017348A1
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igbt
model
model parameters
parameters
parameter
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French (fr)
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罗毅飞
肖飞
刘宾礼
黄永乐
李鑫
贾英杰
普靖
熊又星
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中国人民解放军海军工程大学
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Publication of WO2021017348A1 publication Critical patent/WO2021017348A1/zh
Priority to US17/529,230 priority Critical patent/US11875869B2/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/54—Arrangements for designing test circuits, e.g. design for test [DFT] tools
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/32—Circuit design at the digital level
    • G06F30/33—Design verification, e.g. functional simulation or model checking
    • G06F30/3308—Design verification, e.g. functional simulation or model checking using simulation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Definitions

  • the invention relates to the technical field of power electronic device modeling and reliability, in particular to an IGBT physical model parameter extraction method.
  • the internal parameters of the device have a decisive influence on its performance. These parameters, including structure size, doping concentration, excess carrier lifetime, junction capacitance, transconductance, etc., will directly affect the IGBT's conduction. Various dynamic and static performance indicators such as state voltage drop, switching speed, turn-off tail current, etc. Therefore, in order to establish an accurate IGBT semiconductor physical model and realize accurate simulation of the electrical characteristics of the IGBT, accurate extraction of parameters is an essential key part. At the same time, model parameters also have important application value for IGBT design and manufacturing, structure and performance optimization, and guidance for the safe use of devices.
  • the semiconductor physical model is a simulation model that characterizes the electrical characteristics of IGBT devices. Because it can compromise the simulation accuracy and simulation efficiency, it has become a widely used IGBT model.
  • device manufacturers will optimize each parameter during the IGBT manufacturing process, such as using neutron irradiation to change the IGBT excess carrier life, and adopting buffering Layer technology improves switching performance and so on.
  • IGBTs produced by different manufacturers are similar in structure, and their performance often depends on specific internal process parameters. Therefore, these parameters are also the core business secrets of each manufacturer and cannot be disclosed to general researchers and engineering and technical personnel. Therefore, the difficulty of obtaining model parameters severely restricts the use of IGBT physical models and restricts the use of IGBT simulation models in the design of power electronic circuits. It is necessary to find an effective model parameter extraction method.
  • the extraction of IGBT physical model parameters is generally estimated by using the electrical parameters of the three IGBT ports that can be directly measured combined with some empirical formulas, or indirectly extracting the internal physical parameters of the IGBT by designing the circuit.
  • the former makes the model error larger and it is difficult to meet the accuracy requirements; the latter is cumbersome extraction steps, and is affected by the accuracy of the extraction circuit, the extraction effect of parameters is difficult to meet the requirements of simulation accuracy, and the practical application is not strong in operability.
  • the purpose of the present invention is to provide an IGBT physical model parameter extraction method in view of the defects of the prior art, which can greatly simplify the IGBT physical model parameter extraction method while ensuring the model simulation accuracy requirements for parameter extraction, and improve the IGBT physical model Practicality.
  • the technical solution adopted by the present invention is: an IGBT physical model parameter extraction method, which is characterized by including the following steps: obtaining the initial value and conversion range of the IGBT physical model parameter; combining the corresponding relationship between the IGBT dynamic and static characteristics and the IGBT model parameter The experimental measurement results of IGBT model parameters modify the model parameters.
  • the dynamic and static characteristics of the IGBT module under typical working conditions are obtained based on the data manual; the typical values of the relevant parameters of the IGBT physical model are obtained through theoretical calculation; the reasonable variation range of the typical values of the IGBT model parameters is obtained based on the semiconductor physical mechanism.
  • the corresponding relationship between the IGBT model parameters and the IGBT dynamic and static characteristics is determined by analyzing the influence law and degree of the IGBT model parameters and temperature on the dynamic and static characteristics of the IGBT.
  • the IGBT model parameters are first corrected for the dynamic and static characteristics affected by only a single parameter, and then the dynamic and static characteristics affected by the coupling of multiple IGBT model parameters start from the dominant parameters Correct in turn, and finally combine the dynamic and static characteristics at different temperatures to correct the temperature coefficient of the IGBT model parameters; finally, obtain the IGBT model parameter correction results at different temperatures to complete the extraction of the model parameters.
  • the model parameters are corrected at 25°C according to the influence trend and degree of the IGBT model parameters on the transient characteristics of the IGBT; according to the approximate linearity of the transient characteristics of the IGBT with temperature
  • the temperature empirical formula inside the model will be revised at 125°C, so that the IGBT model parameters can accurately represent the IGBT switching transient characteristics in the entire temperature range.
  • the initial value of the IGBT physical model parameter and the calculation method of its reasonable range are as follows:
  • V B is the forward breakdown voltage of the IGBT collector and emitter
  • W L is the width of the base region
  • q is the electron charge constant
  • ⁇ si is the relative dielectric constant of silicon
  • ⁇ 0 is the dielectric constant of air.
  • ⁇ pnp is the common base current amplification factor of the parasitic PNP transistor in the IGBT; t off is the turn-off time of the IGBT current, and L L is the base hole diffusion coefficient.
  • V 0 is the excess carrier concentration near the edge of the collector PN junction in the base region
  • Q 1 is the equivalent carrier charge in the base region
  • Is the saturation current of the MOSFET
  • V GS is the gate-emitter voltage of the IGBT
  • V th is the IGBT threshold voltage
  • IGBT switch current ⁇ ss IGBT equivalent to the current amplification factor
  • W (t) subject to a neutral base width b is the ratio of electron mobility and hole mobility
  • L L is the hole diffusion coefficient of the base region.
  • the initial value of the gate-collector capacitance C GDJ can be estimated first, and then the initial value of the gate oxide capacitance C OXD can be obtained through the Miller capacitance C GD , where the Miller capacitance C GD can be obtained from the data sheet .
  • the gate-emitter capacitance C GS can be approximated as the difference between the input capacitance C ies of the IGBT and the feedback capacitance C res . Therefore, the initial value and reasonable magnitude of the gate-emitter capacitance C GS can be calculated by equation (8), The feedback capacitor C res and input capacitor C ies can be directly obtained from the data sheet:
  • the initial value and reasonable correction range of the threshold voltage V th can be obtained from the data sheet.
  • the structure size parameters can be obtained by physical measurement; according to the public information of the IGBT manufacturer, the buffer layer reference concentration N H , the buffer layer excess carrier life ⁇ H , and the buffer layer width W H can be obtained in reasonable order of magnitude; a few of the IGBT buffer layers
  • the carrier lifetime is determined by its doping concentration; based on the dispersion range of the semiconductor process parameters, the initial value of the parameter calculation formula can be used to obtain the variation range of the initial value of the model parameter, thereby determining the initial value of the model parameter and its reasonable range.
  • the model parameters that affect the turn-on delay t don are the gate-emitter capacitance C GS , the threshold voltage V th and the Miller capacitance C GD ;
  • the model parameters that affect the current rise time t r are: transconductance The coefficient K p , the threshold voltage V th , the gate-emitter capacitance C GS and the base doping concentration N L ;
  • the model parameters that affect the turn-off delay t doff are the gate-emitter capacitance C GS , the threshold voltage V th , and Conductivity K p and gate oxide capacitance C OXD ;
  • the model parameters that affect the current fall time t f are buffer layer excess carrier lifetime ⁇ H , base region excess carrier lifetime ⁇ L , buffer layer width W H , Based on the width W L and the base doping concentration N L.
  • the temperature-related IGBT physical model parameters inside the device are calculated through the temperature empirical formula:
  • V th (T j ) V th (T 0 )-b ⁇ (T j -T 0 )
  • the temperature coefficients of a, b, c, d, e and actual operating characteristics need to be determined according to the actual device.
  • ⁇ (T 0 ), V th (T 0 ), K p (T 0 ), and I sne (T 0 ) respectively represent the excess carrier lifetime ⁇ , the threshold voltage V th , the transconductance coefficient, and the saturation current of emitter electrons.
  • T 0 The value at temperature T 0 ; ⁇ (T j ), V th (T j ), K p (T j ), and Isne (T j ) represent the values of the above-mentioned physical quantities at temperature T j ; T 0 generally takes 25 °C, T j is the actual operating junction temperature.
  • the dynamic and static characteristics of the IBGT which are less affected by the model parameter coupling, are selected first, and the IGBT model parameters that have a greater influence on the dynamic and static characteristics of the IBGT are corrected first, so that the IGBT represented by the model after the parameter correction
  • the switching transient characteristics are closer to the data sheet values at 25°C; the dynamic and static characteristics of the IBGT, which are coupled with the temperature-related model parameters, are less likely to be affected for temperature coefficient correction.
  • the modified model parameters are excluded, and among the remaining dynamic and static characteristics of the IGBT to be adjusted, the characteristic with the least coupling relationship with the parameter is selected for the next parameter correction; the dynamic and static characteristics of the IGBT meet the requirements for the first time within a reasonable range , Immediately terminate the correction of the IGBT model parameters.
  • the present invention obtains the initial values of the IGBT physical model parameters and their reasonable correction ranges based on the information provided in the data manual and the typical calculations; then, the parameters are corrected according to the law and degree of influence of each parameter on the transient characteristics of the IGBT switch; and finally based on the corrected
  • the parameters of IGBT physical model are simulated and experimentally verified.
  • the results show that the physical model parameters obtained by this method can accurately characterize the transient characteristics of IGBT switching. Because this method only uses device data manuals and model calculations, and does not require complex circuit extraction methods, it significantly reduces the difficulty of extracting IGBT physical model parameters and improves the practicality of the physical model.
  • FIG. 1 Schematic diagram of IGBT structure with buffer layer
  • FIG. 1 Schematic diagram of IGBT switching process waveform
  • the present invention provides a method for extracting IGBT physical model parameters, which is characterized by including the following steps: obtaining the initial value and conversion range of the IGBT physical model parameters; passing the corresponding relationship between the IGBT dynamic and static characteristics and the IGBT model parameters and combining the IGBT model parameter experiments The measurement results modify the model parameters, and the specific steps are as follows:
  • the typical structure diagram of IGBT is shown in Figure 1.
  • the physical model parameters mainly include: V th , C GS , C OXD , K p , N L , W L , W H , ⁇ L , ⁇ H and other parameters directly related to the semiconductor process.
  • the process of model parameter correction if the parameter value exceeds the reasonable range, the model will lose its physical meaning. Therefore, before the parameter correction, the initial value of the parameter and the reasonable correction range should be determined.
  • the specific calculation method is as follows:
  • the depletion layer mainly extends in the N-base region during forward blocking.
  • the base doping concentration plays a key role in the forward blocking performance of the IGBT. Therefore, the initial value and reasonable order of magnitude of N L can be based on Formula (1) is estimated, where V B is the breakdown voltage.
  • the initial value of W L can be calculated by formula (2) and formula (1).
  • the magnitude of the excess carrier lifetime in the base region can be estimated by the t off in the device manual and the semiconductor theory formula:
  • ⁇ pnp is the common base current amplification factor of the parasitic PNP transistor in the IGBT;
  • L Lp is the base hole diffusion coefficient.
  • the initial value of K p can be calculated by combining the following equations:
  • V GS is the excess carrier concentration near the edge of the collector PN junction in the base region
  • Q 1 is the equivalent carrier charge in the base region
  • the initial value of C GDJ can be estimated first, and then the initial value of C OXD can be obtained through the Miller capacitor C GD , where C GD can be obtained from the data sheet.
  • C GS can be approximated as the difference between the input capacitance C ies of the IGBT and the feedback capacitance C res . Therefore, the initial value and reasonable magnitude of C GS can be calculated by formula (8), where C res and C ies can be directly obtained from the data sheet .
  • the initial value and reasonable correction range of V th can be obtained from the data sheet.
  • the structure size parameters can be obtained by physical measurement.
  • the minority carrier lifetime in the IGBT buffer layer is determined by its doping concentration.
  • the change range of the initial value of the model parameter can be obtained, thereby determining the initial value and reasonable range of the model parameter.
  • the turn-on time of IGBT can be divided into two parts, as shown in Figure 2: turn-on delay time t don and turn-on rise time t r , based on the established physical model, with model parameters as variables, within a reasonable range of typical parameter values , Simulate the influence of each parameter on t don and t r .
  • the drive circuit charges C GS , and V GE (t) gradually increases from lower than V th to higher than V th .
  • V GE (t) V th
  • the IGBT is turned on, and I CE gradually increases from zero. Big. Therefore, t don is related to C GS , V th and C GD .
  • I CE rise rate changes will directly affect the size of t r.
  • I CE includes the MOSFET channel current I mos , the IGBT collector emitter hole current I P and the charge and discharge current I c of its internal junction capacitance, namely:
  • I CE I mos +I P +I c
  • B b , Q T , W H , D pH , C BCJ, etc. are all related parameters of the physical model semiconductor.
  • the turn-off time of the IGBT can be divided into: turn-off delay time t doff and turn-off fall time t f , as shown in Figure 2. Analyzing the waveform of the turn-off delay period shows that: with the discharge of C GS , V GE (t) gradually decreases from V GG to V GP , and the magnitude of V GP is only related to V th and K p .
  • V GE (t) is in the Miller plateau, so C GS , V th , K p and C OXD will have an impact on t doff .
  • the turn-off and decline phase of the IGBT can be divided into two parts: a) When V GE (t) drops slightly below V th , the conductive channel in the MOSFET disappears and the channel current rapidly drops to zero; b) Although the electron current is rapid Disappear, but there are still a large number of excess carriers inside the IGBT, which will gradually disappear through recombination, causing the "tailing" of the turn-off current. Since the process a) is completed in an instant, the influence of this period on t f is negligible, and the slower excess carrier recombination process becomes the main factor affecting t f .
  • the carrier recombination rate is Larger, the stronger the recombination effect, the smaller t f , and the recombination rate is related to the lifetime and concentration of excess carriers. Therefore, in summary, the model parameters related to t f are: ⁇ H , ⁇ L , W H , W L , N L.
  • the temperature-related parameters inside the device can be calculated by the temperature empirical formula:
  • V th (T j ) V th (T 0 )-b ⁇ (T j -T 0 )
  • the temperature coefficients a, b, c, d, e are positive, which are related to the actual working characteristics and need to be determined.
  • ⁇ (T 0 ), V th (T 0 ), K p (T 0 ), and I sne (T 0 ) respectively represent the excess carrier concentration, threshold voltage, transconductance, and emitter electron saturation current at temperature T 0
  • the value of ⁇ (T j ), V th (T j ), K p (T j ), and I sne (T j ) represent the value when the temperature is T j ; T 0 is generally 25 °C, and T j is the working result temperature.
  • the model parameters are revised at 25°C; taking into account the temperature characteristics of the IGBT, according to the approximate linear relationship between the transient characteristics of the IGBT and the temperature , The temperature empirical formula inside the model will be revised at 125°C, so that the model can accurately characterize the IGBT switching transient characteristics over the entire temperature range.
  • the model parameters shown in Table 1 can be based on the influence trend and degree of influence on the IGBT transient characteristics, and the types affected by the coupling of model parameters can be selected first. Fewer characteristics, and then select the priority correction parameters according to the degree of the parameter's influence on the characteristics, so that the IGBT switching transient characteristics represented by the parameter-corrected model are closer to the data sheet value at 25°C.
  • the correction process is as follows:
  • C OXD the only parameter that affects t doff is C OXD . Therefore, C OXD is corrected according to the rules in the table so that t doff meets the requirements for the first time, and it can be terminated.
  • the other modifiable parameters also have a coupling effect on E off and t f .
  • E off is not only related to t f , but also closely related to turning off the tail current, t f is preferred for debugging.
  • W H and ⁇ H have a greater impact on the tail current, so when debugging t f , W L and ⁇ L are preferred for correction.
  • W L is corrected.
  • the correction of W L can be terminated. Otherwise, ⁇ L is corrected until t f meets the requirements.
  • E off also meets the requirements, the parameter correction is completed; otherwise, ⁇ H is selected for correction.
  • the correction is terminated and the model parameter correction at 25°C is completed.
  • t doff can be adjusted by modifying the temperature coefficient of v sat,p .
  • the temperature coefficients of ⁇ L and ⁇ H are corrected at the same time to complete the correction of the temperature coefficient at 125°C.
  • the extraction method of IGBT physical model parameters is obtained: based on the data manual, the dynamic and static characteristics of the IGBT module under typical working conditions are obtained, and the typical values of the relevant parameters of the physical model are obtained through theoretical calculations; then, based on semiconductor physics According to the mechanism, the reasonable variation range of the typical value of the model parameters is obtained; next, the corresponding relationship between the model parameters and the dynamic and static characteristics of the IGBT is determined by analyzing the influence law and degree of the model parameters and the temperature on the dynamic and static characteristics of the IGBT; further, combined with the actual measurement As a result, firstly, the parameter is corrected for the characteristic affected only by the unique parameter, and then for the characteristic affected by the multi-parameter coupling, starting with the dominant parameter, the temperature coefficient of the parameter is corrected by combining the characteristic changes at different temperatures. Finally, the model parameter correction results at different temperatures are obtained, and the model parameter extraction is realized.
  • the extraction method flowchart is shown in Figure 14.
  • Table 2 shows the model parameter values extracted by the method of the present invention.
  • Table 3 shows the comparison of the double pulse simulation results of the IGBT module using the initial values of the model parameters and the extracted values of the present invention. It can be seen that the IGBT physical model parameters are extracted by using the present invention. The simulation results of the model parameters obtained by the method are in good agreement with the actual measurement results, which verifies the correctness of the IGBT physical model parameter extraction method proposed by the present invention.

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Abstract

一种IGBT物理模型参数提取方法，其特征在于包括以下步骤：获取IGBT物理模型参数的初始值及变换范围；通过IGBT动静态特征和IGBT模型参数的对应关系并结合IGBT模型参数实验测量结果修正模型参数。目的就是针对现有技术的缺陷，提供一种IGBT物理模型参数提取方法，保证参数提取对模型仿真精度要求的同时，可极大简化IGBT物理模型参数的提取方法，提升了IGBT物理模型的实用性。

Description

IGBT物理模型参数提取方法 技术领域
本发明涉及电力电子器件建模与可靠性技术领域，具体涉及一种IGBT物理模型参数提取方法。
背景技术
对一定结构的IGBT而言，器件的内部参数对其性能具有决定性的影响，这些参数包括结构尺寸、掺杂浓度、过剩载流子寿命以及结电容、跨导等都将直接影响着IGBT的通态压降、开关速度、关断拖尾电流等各项动、静态性能指标。因此，要想建立准确的IGBT半导体物理模型并实现IGBT电气特性的精确仿真，参数的准确提取是必不可少的关键一环。同时，模型参数对于IGBT的设计与制造、结构与性能优化以及指导器件的安全使用等也具有重要的应用价值。
半导体物理模型是表征IGBT器件电气特性的一种仿真模型，因其能够在仿真精度与仿真效率中进行折中，成为目前广泛使用的一种IGBT模型。为了不断提高产品的综合性能，追求各项性能指标的最优化，器件生产厂商都会在IGBT的制造过程中对各个参数进行优化控制，例如采用中子辐照改变IGBT过剩载流子寿命，采用缓冲层技术改善开关性能等。不同厂商生产的IGBT在结构上都大同小异，性能的优劣往往取决于具体内部工艺参数，因此这些参数也是各个厂商的核心商业机密，不可能向一般研究者和工程技术人员公开。因此，模型参数的难以获取严重制约了IGBT物理模型的使用，限制了IGBT仿真模型在电力电子电路设计中的使用，需要找到一种有效的模型参数提取方法。
目前关于IGBT物理模型参数的提取，一般都是采用能够直接测量得到的IGBT三个端口电气参数结合一些经验公式进行估算，或者采用设计电路的方法来间接提取IGBT内部物理参数。前者使得模型误差较大，难以满足精度要求；后者提取步骤繁琐，且受提取电路精度的影响，参数的提取效果均难以满足仿真精度的需求，且实际应用起来可操作性不强。
发明内容
本发明的目的就是针对现有技术的缺陷，提供一种IGBT物理模型参数提取方法，保证参数提取对模型仿真精度要求的同时，可极大简化IGBT物理模型参数的提取方法，提升了IGBT物理模型的实用性。
本发明采用的技术方案是：一种IGBT物理模型参数提取方法，其特征在于包括以下步骤：获取IGBT物理模型参数的初始值及变换范围；通过IGBT动静态特性和IGBT模型参数的对应关系并结合IGBT模型参数实验测量结果修正模型参数。
上述技术方案中，基于数据手册得到IGBT模块典型工况下的动静态特性；通过理论计算得到IGBT物理模型相关参数的典型值；基于半导体物理机理得出IGBT模型参数典型值的合理变化范围。
上述技术方案中，通过分析IGBT模型参数和温度对IGBT动静态特性的影响规律和影响程度，确定IGBT模型参数与IGBT动静态特性的对应关系。
上述技术方案中，结合IGBT模型参数实验测量结果，首先针对仅受唯一参数影响的动静态特性来修正该IGBT模型参数，然后针对受多个IGBT模型参数耦合影响的动静态特性，从主导参数开始依次修正，最后结合不同温度下的动静态特性变化，修正IGBT模型参数的温度系数；最终，得到不同温度下的IGBT模型参数修正结果，完成模型参数的提取。
上述技术方案中，基于IGBT模型参数初始值及合理范围，依据IGBT模型参数对IGBT开关瞬态特性的影响趋势及程度，在25℃下进行模型参数修正；根据IGBT瞬态特性随温度的近似线性变化关系，将在125℃下对模型内部的温度经验公式进行修正，使IGBT模型参数在整个温度范围内准确表征IGBT开关瞬态特性。
上述技术方案中，IGBT物理模型参数初始值及其合理范围计算方法如下：
(1)基区掺杂浓度N L
N L＝1.932×10 18V B -1.4
             对称型结构(1-a)
Figure PCTCN2019121527-appb-000001
式中，V B为IGBT集射级正向击穿电压，W L为基区宽度，q为电子电荷量常数，ε si为硅相对介电常数，ε 0为空气介电常数。
(2)基区宽度W L
Figure PCTCN2019121527-appb-000002
(3)基区过剩载流子寿命τ L
Figure PCTCN2019121527-appb-000003
Figure PCTCN2019121527-appb-000004
其中α pnp为IGBT内寄生PNP晶体管的共基极电流放大倍数；t off为IGBT电流关断时间，L L为基区空穴扩散系数。
(4)跨导系数K p
Figure PCTCN2019121527-appb-000005
Figure PCTCN2019121527-appb-000006
Figure PCTCN2019121527-appb-000007
其中，P 0为基区靠近集电极PN结边缘的过剩载流子浓度，Q 1为基区等效载流子电荷，
Figure PCTCN2019121527-appb-000008
为MOSFET的饱和电流，V GS为IGBT的栅射极电压，V th为IGBT阈值电压，
Figure PCTCN2019121527-appb-000009
为IGBT导通电流，β ss为IGBT等效电流放大系数，W(t)为准中性基区宽度，b为电子迁移率和空穴迁移率比值，L L为基区空穴扩散系数。代入V GS、V th及
Figure PCTCN2019121527-appb-000010
可得K p，
Figure PCTCN2019121527-appb-000011
与相应的V GS可由器件数据手册获取。
(5)栅氧化层电容C OXD
根据结电容表达式首先可估算得到栅极-集电极电容C GDJ的初始值，进而通过米勒电容C GD可得栅氧化层电容C OXD的初始值，其中米勒电容C GD可由数据手册获取。
(6)栅极-发射极电容C GS
栅极-发射极电容C GS可近似为IGBT的输入电容C ies与反馈电容C res之差，因此栅极-发射极电容C GS的初始值与合理数量级可通过式(8)进行计算，式中反馈电容C res与输入电容C ies可直接由数据手册获取：
C GS＝C ies-C res
             (8)(7)其他模型参数
阈值电压V th的初始值及合理修正范围可由数据手册获取。结构尺寸参数可由物理测量获取；根据IGBT生产厂家的公开资料，可获取缓冲层参照浓度N H、缓冲层过剩载流子寿命τ H、缓冲层宽度W H的合理数量级；IGBT缓冲层中的少数载流子寿命由其掺杂浓度决定；基于半导体工艺参数分散性范围，带入参数初始值计算公式，可以得到模型参数初始值的变化范围，从而确定模型参数的初始值及其合理范围。
上述技术方案中，对开通延时t don产生影响的模型参数是栅射极电容C GS、阈值电压V th及米勒电容C GD；对电流上升时间t r产生影响的模型参数为：跨导系数K p、 阈值电压V th、栅射极电容C GS及基区掺杂浓度N L；对关断延时t doff产生影响的模型参数为栅射极电容C GS、阈值电压V th、跨导系数K p及栅氧化层电容C OXD；对电流下降时间t f产生影响的模型参数为缓冲层过剩载流子寿命τ H、基区过剩载流子寿命τ L、缓冲层宽度W H、基于宽度W L、基区掺杂浓度N L。
上述技术方案中，器件内部与温度相关的IGBT物理模型参数，通过温度经验公式计算得到：
Figure PCTCN2019121527-appb-000012
V th(T j)＝V th(T 0)-b×(T j-T 0)
               (13)
Figure PCTCN2019121527-appb-000013
Figure PCTCN2019121527-appb-000014
上式中，a、b、c、d、e与实际工作特性有关的温度系数，需要根据实际器件进行确定。τ(T 0)、V th(T 0)、K p(T 0)及I sne(T 0)分别表示过剩载流子寿命τ、阈值电压V th、跨导系数以及发射极电子饱和电流在温度T 0时的值；τ(T j)、V th(T j)、K p(T j)及I sne(T j)表示上述物理量在温度为T j时的值；T 0一般取25℃，T j为实际工作结温。
上述技术方案中，优先选择受模型参数耦合影响种类较少的IBGT动静态特性，优先修正然后根对IBGT动静态特性的影响程度较大的IGBT模型参数，使参数修正后的模型所表征的IGBT开关瞬态特性更接近25℃下的数据手册值；优先选择与温度相关模型参数耦合影响种类较少的IBGT动静态特性进行温度系数修正。
上述技术方案中，排除已修正的模型参数，在其余待调整的IGBT动静态特性中，选择与参数耦合关系种类最少的特性进行下一步参数修正；在合理范围内使IGBT动静态特性首次满足要求，立即终止对该IGBT模型参数的修正。
本发明基于数据手册提供的信息和典型计算，得到IGBT物理模型参数的初始值及其合理修正范围；然后依据各参数对IGBT开关瞬态特性的影响规律和影响程度进行参数修正；最后基于修正后的参数对IGBT物理模型进行仿真及实验验证。结果表明，通过该方法得到的物理模型参数可使模型准确的表征IGBT开关瞬态特性。由于该方法仅通过器件数据手册和模型计算，无需采用复杂的电路提取方法，因此显著降低了IGBT物理模型参数的提取难度，提升了物理模型的实用性。
附图说明
图1 带缓冲层IGBT结构示意图
图2 IGBT开关过程波形示意图
图3 不同温度下t don随V th的变化规律
图4 不同温度下t r随K p的变化规律
图5 不同温度下t r随V th的变化规律
图6 不同温度下t doff随V th的变化规律
图7 不同温度下t f随τ L的变化规律
图8 不同温度下t f随τ H的变化规律
图9 t r随结温T j的变化规律
图10 t f随结温T j的变化规律
图11 E on随结温T j的变化规律
图12 E off随结温T j的变化规律
图13 IGBT双脉冲仿真测试电路
图14 IGBT物理模型参数提取流程图
具体实施方式
下面结合附图和具体实施例对本发明作进一步的详细说明，便于清楚地了解本发明，但它们不对本发明构成限定。
本发明提供了一种IGBT物理模型参数提取方法，其特征在于包括以下步骤：获取IGBT物理模型参数的初始值及变换范围；通过IGBT动静态特性和IGBT模型参数的对应关系并结合IGBT模型参数实验测量结果修正模型参数，其具体步骤如下：
1、IGBT物理模型参数初始值及其合理范围的确定
IGBT典型结构示意图如图1所示。其物理模型参数主要包括：V th，C GS，C OXD，K p，N L，W L，W H，τ L，τ H等与半导体工艺直接相关的参数。在模型参数修正过程中，若参数取值超出合理范围，则模型也将失去物理意义，因此在进行参数修正之前，首先应该确定参数初始值及合理的修正范围，具体计算方法如下所述：
(1)基区掺杂浓度N L
根据半导体理论可知，正向阻断时耗尽层主要在N-基区内延伸，基区掺杂浓度对IGBT的正向阻断性能起关键作用，因此N L的初始值与合理数量级可根据公式(1)估算得到，其中V B为击穿电压。
N L＝1.932×10 18V B -1.4
                  对称型结构(1-a)
Figure PCTCN2019121527-appb-000015
(2)基区宽度W L
由于击穿电压与基区掺杂浓度及基区宽度密切相关，基区宽度的大小取决于基区掺杂浓度，因此可由公式(2)和公式(1)推算得到W L的初始值。
Figure PCTCN2019121527-appb-000016
(3)基区过剩载流子寿命τ L
可通过器件手册中的t off以及半导体理论公式对基区过剩载流子寿命的量级进行估算：
Figure PCTCN2019121527-appb-000017
Figure PCTCN2019121527-appb-000018
其中α pnp为IGBT内寄生PNP晶体管的共基极电流放大倍数；L Lp为基区空穴扩散系数。
(4)跨导系数K p
K p的初始值可通过联立以下方程组计算得到：
Figure PCTCN2019121527-appb-000019
Figure PCTCN2019121527-appb-000020
Figure PCTCN2019121527-appb-000021
其中，P 0为基区靠近集电极PN结边缘的过剩载流子浓度，Q 1为基区等效载流子电荷，
Figure PCTCN2019121527-appb-000022
为MOSFET的饱和电流。代入V GS、V th及
Figure PCTCN2019121527-appb-000023
可得K p，
Figure PCTCN2019121527-appb-000024
与相应的V GS可由器件数据手册获取。
(5)C OXD
根据结电容表达式首先可估算得到C GDJ的初始值，进而通过密勒电容C GD可得C OXD的初始值，其中C GD可由数据手册获取。
(6)C GS
C GS可近似为IGBT的输入电容C ies与反馈电容C res之差，因此C GS的初始值与合理数量级可通过式(8)进行计算，式中C res与C ies可直接由数据手册获取。
C GS＝C ies-C res
                (8)(7)其他模型参数
V th的初始值及合理修正范围可由数据手册获取。结构尺寸参数可由物理测量获取。
根据IGBT生产厂家的公开资料，可获取N H、τ H、W H的合理数量级。且由半导体理论可知，IGBT缓冲层中的少数载流子寿命由其掺杂浓度决定。基于半导体工艺参数分散性范围，带入参数初始值计算公式，可以得到模型参数初始值的变化范围，从而确定模型参数的初始值及其合理范围。
2、IGBT物理模型参数对特性的影响规律和影响程度分析
2.1定温下模型参数对IGBT开通特性的影响规律和影响程度分析
IGBT的开通时间可分为两部分，如图2所示：开通延迟时间t don与开通上升时间t r，基于已建立的物理模型，以模型参数为变量，在典型参数值的合理变化范围内，对各参数对t don与t r的影响进行仿真。在开通延迟阶段，驱动电路向C GS充电，V GE(t)从低于V th逐渐增加到高于V th，当V GE(t)＝V th时IGBT开通，I CE从零开始逐渐增大。因此，t don与C GS、V th及C GD有关。
I CE上升速率的变化将直接影响t r的大小。I CE包括MOSFET沟道电流I mos、IGBT集射极空穴电流I P及其内部结电容的充放电电流I c，即：
I CE＝I mos+I P+I c
                       (9)结合MOSFET原理可知，K p、V th及C GS的变化将对I mos产生影响；根据物理模型空穴电流的表达式(10)可知，与I P相关的模型参数有：N L、τ L、W H及W L。
Figure PCTCN2019121527-appb-000025
其中，B b，Q T，W H，D pH，C BCJ等均为物理模型半导体相关参数。
因此，对t r产生影响的模型参数为：K p、V th、C GS及N L。
2.2定温下模型参数对IGBT关断特性的影响规律和影响程度分析
IGBT的关断时间可分为：关断延迟时间t doff与关断下降时间t f，如图2所示。分析关断延迟阶段的波形可知：随着C GS的放电，V GE(t)从V GG逐渐减小到V GP，V GP的大小仅与V th、K p相关。
Figure PCTCN2019121527-appb-000026
在[t6-t7]内，V GE(t)处于米勒平台期，因此C GS、V th、K p及C OXD将对t doff产生影响。
IGBT的关断下降阶段可分为两部分：a)当V GE(t)下降至略低于V th时，MOSFET内导电沟道消失，沟道电流迅速下降至零；b)虽然电子电流迅速消失，但IGBT内部仍残留大量的过剩载流子，它们将通过复合逐渐消失，造成关断电流的“拖尾”。由于过程a)是在瞬间完成，因此这段时间对t f的影响可忽略不计，较为缓慢的过剩载流子复合过程成为影响t f的主要因素，根据半导体理论可知，载流子复合率越大，复合效应越强，t f越小，而复合率与过剩载流子寿命及浓度有关，因此，综上分析可知与t f相关的模型参数有：τ H、τ L、W H、W L、N L。
模型参数对IGBT瞬态特性影响规律及影响程度仿真结果及汇总表如图3-图8和表1所示。
表1开关瞬态下IGBT模型参数对特性的影响规律及影响程度
(箭头方向表示影响规律，箭头数量表示影响程度)
Figure PCTCN2019121527-appb-000027
Figure PCTCN2019121527-appb-000028
2.3温度对IGBT特性影响规律及影响程度分析
器件内部与温度相关的参数，可通过温度经验公式计算得到：
Figure PCTCN2019121527-appb-000029
V th(T j)＝V th(T 0)-b×(T j-T 0)
                  (13)
Figure PCTCN2019121527-appb-000030
Figure PCTCN2019121527-appb-000031
上式中，温度系数a、b、c、d、e为正，与实际工作特性有关，需要确定。τ(T 0)、V th(T 0)、K p(T 0)及I sne(T 0)分别表示过剩载流子浓度、阈值电压、跨导以及发射极电子饱和电流在温度T 0时的值；τ(T j)、V th(T j)、K p(T j)及I sne(T j)表示温度为T j时的值；T 0一般取25℃，T j为工作结温。结合这些与温度相关的参数与温度的变化关系以及参数与IGBT开关瞬态特性的变化关系，可得IGBT工作结温对其开关瞬态特性的影响。仿真分析结果如图9-图12所示。
3、IGBT物理模型参数修正方法
基于参数初始值及合理范围，依据参数对IGBT开关瞬态特性的影响趋势及程度，在25℃下进行模型参数修正；考虑到IGBT的温度特性，根据IGBT瞬态特性随温度的近似线性变化关系，将在125℃下对模型内部的温度经验公式进行修正，使模型可在整个温度范围内准确表征IGBT开关瞬态特性。
(1)25℃下模型参数修正
考虑到模型参数种类繁多，且对IGBT开关瞬态特性复杂的耦合影响，在此可依据 表1所示的模型参数对IGBT瞬态特性的影响趋势及影响程度，优先选择受模型参数耦合影响种类较少的特性，然后根据参数对特性的影响程度选择优先修正的参数，使参数修正后的模型所表征的IGBT开关瞬态特性更接近25℃下的数据手册值，修正过程具体如下：
①t don
分析表1可知，IGBT开关瞬态特性中，与t don有关的参数种类最少——V th与C GS，且C GS对t don的影响更大，因此优先选择C GS并根据表1中C GS对t don的影响规律对其进行修正，在合理范围内使t don首次满足要求，立即终止对C GS的修正，否则可进一步对V th进行修正，修正的方法及思路与C GS相同。
②t r
排除已修正的模型参数，在其余待调整的开关瞬态特性中，选择与参数耦合关系种类最少的特性进行下一步参数修正。观察表1可知，仅剩K p和N L。考虑到IGBT正向阻断要求，在修正时应避免对N L的大幅调整，因此优先选择K p进行修正。依据t r随K p的变化规律，在K p的合理变化范围内，当t r的值首次满足要求时，即可终止对K p的修正，否则可微调N L使t r满足要求，终止对N L的修正。
③E on
至此，与IGBT开通时间有关的瞬态特性调试完成，若IGBT的开通时间满足要求的情况下，E on将同时满足要求。
④t doff
排除上述已修正的参数，在其余待调整的特性中，对t doff产生影响的参数仅有C OXD，因此根据表中规律对C OXD进行修正，使t doff首次满足要求，即可终止。
⑤t f及E off
其余可修正的参数同时对E off与t f产生耦合影响，但是由于E off的大小不仅与t f有关，还与关断拖尾电流密切相关，因此优先选择t f进行调试。而W H和τ H对拖尾电流的影响更大，因此在调试t f时，优先选择W L、τ L进行修正。
根据t f随W L的变化规律，对W L进行修正，当t f的值首次满足要求时，即可终止对W L的修正，否则对τ L进行修正，直到t f满足要求。同时，若E off同样满足要求，则完成 参数修正，否则选择τ H进行修正，t f和E off同时满足要求时，终止修正，完成25℃下的模型参数修正。
(2)125℃下模型参数修正
与25℃下的修正思路类似，在此优先选择与温度相关模型参数耦合影响种类较少的特性，进行温度系数修正。具体修正过程分析如下：
①t don
优先选择修正V th的温度系数a，当t don首次满足要求时，终止对a的修正。
②t r
选择其余特性中受与温度相关的参数耦合影响最少的特性t r—K p的温度系数b，当t r首次满足要求时，即可终止对b的修正。
③t doff
由于空穴饱和漂移速度v sat,p随温度增加而减小，使t doff随温度的增加而增加。因此可通过修正v sat,p的温度系数对t doff进行调整。
④t f及E off
根据t f及E off的要求，同时修正τ L与τ H的温度系数，完成125℃下温度系数的修正工作。
4、IGBT物理模型参数提取方法
结合上述的分析方法和结论，得到IGBT物理模型参数提取方法：基于数据手册，得到IGBT模块典型工况下的动静态特性，通过理论计算，得到物理模型相关参数的典型值；然后，基于半导体物理机理，得出模型参数典型值的合理变化范围；接下来，通过分析模型参数和温度对IGBT动静态特性的影响规律和影响程度，确定模型参数与IGBT动静态特性的对应关系；进而，结合实测结果，首先针对仅受唯一参数影响的特性来修正该参数，然后针对受多参数耦合影响的特性，从主导参数开始依次修正，最后结合不同温度下的特性变化，修正参数的温度系数。最终，得到不同温度下的模型参数修正结果，实现模型参数的提取，提取方法流程图如图14所示。
5、实验验证
以英飞凌3300V/1500A IGBT模块为例进行仿真和实验验证。首先，基于建立的物 理模型，分别取模型参数初始值及修正值对改进模型进行IGBT双脉冲测试仿真。仿真和测试电路如图13所示，其中L＝90uH，R gon＝0.9Ω，R goff＝2.7Ω，I CE＝1500A、V DC＝1800V、L S＝40nH，C GE＝330nF。
表2为采用本发明方法提取的模型参数值，表3所示为IGBT模块采用模型参数初始值及本发明提取值的双脉冲仿真结果对比，可以看出，采用本发明的IGBT物理模型参数提取方法得到的模型参数，其仿真结果与实测结果吻合良好，验证了本发明提出的IGBT物理模型参数提取方法的正确性。
表2英飞凌FZ1500R33HL3 IGBT模型的参数初始值与提取值
参数 初始值 本发明提取值
W L/cm 0.044 0.048
τ L/s 5×10 -6 6.5×10 -6
V th/V 5.8 6
C GS/F 1.2×10 -9 2.5×10 -9
C OXD/F 5×10 -8 7.8×10 -8
τ H/s 5×10 -7 3×10 -7
K p/A/V 2 3.0 5.0
a(τ L) 1.5 1.0
a(τ H) 1.5 1.0
c -1.5 -1.0
表3英飞凌FZ1500R33HL3 IGBT模块物理模型参数提取效果对比表
Figure PCTCN2019121527-appb-000032
Figure PCTCN2019121527-appb-000033
本说明书未作详细描述的内容属于本领域专业技术人员公知的现有技术。

Claims (10)

  1. 一种IGBT物理模型参数提取方法，其特征在于包括以下步骤：获取IGBT物理模型参数的初始值及变换范围；通过IGBT动静态特性和IGBT模型参数的对应关系并结合IGBT模型参数实验测量结果修正模型参数。
  2. 根据权利要求1所述的IGBT物理模型参数提取方法，其特征在于基于数据手册得到IGBT模块典型工况下的动静态特性；通过理论计算得到IGBT物理模型相关参数的典型值；基于半导体物理机理得出IGBT模型参数典型值的合理变化范围。
  3. 根据权利要求1所述的IGBT物理模型参数提取方法，其特征在于通过分析IGBT模型参数和温度对IGBT动静态特性的影响规律和影响程度，确定IGBT模型参数与IGBT动静态特性的对应关系。
  4. 根据权利要求1所述的IGBT物理模型参数提取方法，其特征在于结合IGBT模型参数实验测量结果，首先针对仅受唯一参数影响的动静态特性来修正该IGBT模型参数，然后针对受多个IGBT模型参数耦合影响的动静态特性，从主导参数开始依次修正，最后结合不同温度下的动静态特性变化，修正IGBT模型参数的温度系数；最终，得到不同温度下的IGBT模型参数修正结果，完成模型参数的提取。
  5. 根据权利要求4所述的IGBT物理模型参数提取方法，其特征在于基于IGBT模型参数初始值及合理范围，依据IGBT模型参数对IGBT开关瞬态特性的影响趋势及程度，在25℃下进行模型参数修正；根据IGBT瞬态特性随温度的近似线性变化关系，将在125℃下对模型内部的温度经验公式进行修正，使IGBT模型参数在整个温度范围内准确表征IGBT开关瞬态特性。
  6. 根据权利要求2所述的IGBT物理模型参数提取方法，其特征在于IGBT物理模型参数初始值及其合理范围计算方法如下：
    (1)基区掺杂浓度N L
    N L＝1.932×10 18V B -1.4  对称型结构  (1-a)
    Figure PCTCN2019121527-appb-100001
      非对称型结构  (1-b)
    式中，V B为IGBT集射级正向击穿电压，W L为基区宽度，q为电子电荷量常数，ε si为硅相对介电常数，ε 0为空气介电常数；
    (2)基区宽度W L
    Figure PCTCN2019121527-appb-100002
    (3)基区过剩载流子寿命τ L
    Figure PCTCN2019121527-appb-100003
    Figure PCTCN2019121527-appb-100004
    其中α pnp为IGBT内寄生PNP晶体管的共基极电流放大倍数，t off为IGBT电流关断时间，L L为基区空穴扩散系数；
    (4)跨导系数K p
    Figure PCTCN2019121527-appb-100005
    Figure PCTCN2019121527-appb-100006
    Figure PCTCN2019121527-appb-100007
    其中，P 0为基区靠近集电极PN结边缘的过剩载流子浓度，Q 1为基区等效载流子电荷，
    Figure PCTCN2019121527-appb-100008
    为MOSFET的饱和电流，V GS为IGBT的栅射极电压，V th为IGBT阈值电压，
    Figure PCTCN2019121527-appb-100009
    为IGBT导通电流，β ss为IGBT等效电流放大系数，W(t)为准中性基区宽度，b为电子迁移率和空穴迁移率比值，L L为基区空穴扩散系数；代入V GS、V th及
    Figure PCTCN2019121527-appb-100010
    可得K p，
    Figure PCTCN2019121527-appb-100011
    与相应的V GS可由器件数据手册获取；
    (5)栅氧化层电容C OXD
    根据结电容表达式首先可估算得到栅极-集电极电容C GDJ的初始值，进而通过米勒电容C GD可得栅氧化层电容C OXD的初始值，其中米勒电容C GD可由数据手册获取；
    (6)栅极-发射极电容C GS
    栅极-发射极电容C GS可近似为IGBT的输入电容C ies与反馈电容C res之差，因此栅 极-发射极电容C GS的初始值与合理数量级可通过式(8)进行计算，式中输入电容C res与反馈电容C ies可直接由数据手册获取：
    C GS＝C ies-C res             (8)
    (7)其他模型参数
    阈值电压V th的初始值及合理修正范围可由数据手册获取。结构尺寸参数可由物理测量获取；根据IGBT生产厂家的公开资料，可获取缓冲层参照浓度N H、缓冲层过剩载流子寿命τ H、缓冲层宽度W H的合理数量级；IGBT缓冲层中的少数载流子寿命由其掺杂浓度决定；基于半导体工艺参数分散性范围，带入参数初始值计算公式，可以得到模型参数初始值的变化范围，从而确定模型参数的初始值及其合理范围。
  7. 根据权利要求3所述的IGBT物理模型参数提取方法，其特征在于对开通延时t don产生影响的模型参数是栅射极电容C GS、阈值电压V th及米勒电容C GD；对电流上升时间t r产生影响的模型参数为：跨导系数K p、阈值电压V th、栅射极电容C GS及基区掺杂浓度N L；对关断延时t doff产生影响的模型参数为栅射极电容C GS、阈值电压V th、跨导系数K p及栅氧化层电容C OXD；对电流下降时间t f产生影响的模型参数为缓冲层过剩载流子寿命τ H、基区过剩载流子寿命τ L、缓冲层宽度W H、基于宽度W L、基区掺杂浓度N L。
  8. 根据权利要求3所述的IGBT物理模型参数提取方法，其特征在于器件内部与温度相关的IGBT物理模型参数，通过温度经验公式计算得到：
    Figure PCTCN2019121527-appb-100012
    V th(T j)＝V th(T 0)-b×(T j-T 0)        (13)
    Figure PCTCN2019121527-appb-100013
    Figure PCTCN2019121527-appb-100014
    上式中，a、b、c、d、e与实际工作特性有关的温度系数，需要根据实际器件进行确定；τ(T 0)、V th(T 0)、K p(T 0)及I sne(T 0)分别表示过剩载流子寿命τ、阈值电压V th、跨导系数以及发射极电子饱和电流在温度T 0时的值；τ(T j)、V th(T j)、K p(T j)及I sne(T j)表示上述物 理量在温度为T j时的值；T 0一般取25℃，T j为实际工作结温。
  9. 根据权利要求5所述的IGBT物理模型参数提取方法，其特征在于优先选择受模型参数耦合影响种类较少的IBGT动静态特性，优先修正然后根对IBGT动静态特性的影响程度较大的IGBT模型参数，使参数修正后的模型所表征的IGBT开关瞬态特性更接近25℃下的数据手册值；优先选择与温度相关模型参数耦合影响种类较少的IBGT动静态特性进行温度系数修正。
  10. 根据权利要求9所述的IGBT物理模型参数提取方法，其特征在于排除已修正的模型参数，在其余待调整的IGBT动静态特性中，选择与参数耦合关系种类最少的特性进行下一步参数修正；在合理范围内使IGBT动静态特性首次满足要求，立即终止对该IGBT模型参数的修正。
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