TW200802761A - Gallium nitride material and method for producing the same - Google Patents
Gallium nitride material and method for producing the sameInfo
- Publication number
- TW200802761A TW200802761A TW096108521A TW96108521A TW200802761A TW 200802761 A TW200802761 A TW 200802761A TW 096108521 A TW096108521 A TW 096108521A TW 96108521 A TW96108521 A TW 96108521A TW 200802761 A TW200802761 A TW 200802761A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- less
- producing
- gallium nitride
- growth
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title abstract 3
- 239000000463 material Substances 0.000 title abstract 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 5
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 1
- 150000004678 hydrides Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006067907 | 2006-03-13 | ||
JP2007056353A JP4187175B2 (ja) | 2006-03-13 | 2007-03-06 | 窒化ガリウム系材料の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200802761A true TW200802761A (en) | 2008-01-01 |
Family
ID=38609128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096108521A TW200802761A (en) | 2006-03-13 | 2007-03-13 | Gallium nitride material and method for producing the same |
Country Status (6)
Country | Link |
---|---|
US (3) | US7794541B2 (zh) |
EP (1) | EP1995357A1 (zh) |
JP (1) | JP4187175B2 (zh) |
KR (2) | KR101424292B1 (zh) |
TW (1) | TW200802761A (zh) |
WO (1) | WO2007119319A1 (zh) |
Families Citing this family (25)
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JP2008297191A (ja) * | 2007-05-02 | 2008-12-11 | Sumitomo Electric Ind Ltd | 窒化ガリウム基板及び窒化ガリウム層の形成方法 |
JP5018423B2 (ja) | 2007-11-20 | 2012-09-05 | 住友電気工業株式会社 | Iii族窒化物半導体結晶基板および半導体デバイス |
KR20100049934A (ko) | 2008-11-04 | 2010-05-13 | 현대자동차주식회사 | 가솔린 직접 분사 엔진 |
US8017963B2 (en) * | 2008-12-08 | 2011-09-13 | Cree, Inc. | Light emitting diode with a dielectric mirror having a lateral configuration |
EP2377974A4 (en) | 2009-01-08 | 2014-11-19 | Mitsubishi Chem Corp | PROCESS FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL, AND MANUFACTURING DEVICE THEREOF |
JP5434111B2 (ja) * | 2009-02-06 | 2014-03-05 | 三菱化学株式会社 | 自立基板の製造方法 |
JP5544723B2 (ja) * | 2009-02-06 | 2014-07-09 | 三菱化学株式会社 | ショットキーダイオードおよびショットキーダイオードの製造方法 |
KR100943091B1 (ko) * | 2009-04-07 | 2010-02-18 | 주식회사 시스넥스 | 질화갈륨 단결정 성장을 위한 수소화기상증착기 |
US8541817B2 (en) * | 2009-11-06 | 2013-09-24 | Nitek, Inc. | Multilayer barrier III-nitride transistor for high voltage electronics |
US8465587B2 (en) * | 2009-12-30 | 2013-06-18 | Cbl Technologies, Inc. | Modern hydride vapor-phase epitaxy system and methods |
JP2011256082A (ja) * | 2010-06-10 | 2011-12-22 | Sumitomo Electric Ind Ltd | GaN結晶自立基板およびその製造方法 |
FR2968830B1 (fr) | 2010-12-08 | 2014-03-21 | Soitec Silicon On Insulator | Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe |
EP2770089A4 (en) | 2011-10-21 | 2015-09-02 | Mitsubishi Chem Corp | METHOD FOR PRODUCING A NITRIDE SEMICONDUCTOR CRYSTAL OF A GROUP 13 METAL OF THE PERIODIC TABLE AND A NITRIDE SEMI-CONDUCTIVE CRYSTAL OF A GROUP 13 METAL OF THE PERIODIC TABLE PRODUCED BY SAID PRODUCTION PROCESS |
JP2013173652A (ja) * | 2012-02-27 | 2013-09-05 | Tokuyama Corp | 自立基板の製造方法 |
JP2013177275A (ja) * | 2012-02-28 | 2013-09-09 | Mitsubishi Chemicals Corp | Iii族窒化物結晶の製造方法およびiii族窒化物半結晶 |
EP3056592B1 (en) * | 2013-10-09 | 2021-12-01 | Osaka University | Method for producing group iii nitride crystal and apparatus for producing group iii nitride crystal |
EP3998370A1 (en) * | 2015-03-30 | 2022-05-18 | Tosoh Corporation | Gallium nitride-based film and method for manufacturing same |
JP6740623B2 (ja) * | 2015-04-24 | 2020-08-19 | 東ソー株式会社 | 窒化ガリウム系膜ならびにその製造方法 |
JP6916719B2 (ja) * | 2017-11-17 | 2021-08-11 | 株式会社トクヤマ | Iii族窒化物単結晶積層体の製造方法及びiii族窒化物単結晶積層体 |
CN110777432B (zh) * | 2018-07-30 | 2023-09-29 | 住友化学株式会社 | 氮化物晶体 |
CN110777433B (zh) * | 2018-07-30 | 2023-09-29 | 住友化学株式会社 | 氮化物晶体 |
CN116288724A (zh) | 2018-08-17 | 2023-06-23 | 三菱化学株式会社 | n型GaN结晶、GaN晶片以及GaN结晶、GaN晶片和氮化物半导体器件的制造方法 |
JP7326759B2 (ja) * | 2019-02-06 | 2023-08-16 | 三菱ケミカル株式会社 | GaN単結晶製造方法 |
JP7379931B2 (ja) * | 2019-08-23 | 2023-11-15 | 三菱ケミカル株式会社 | c面GaN基板 |
KR102536978B1 (ko) * | 2021-11-10 | 2023-05-26 | 신정훈 | 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비 |
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US6617235B2 (en) * | 1995-03-30 | 2003-09-09 | Sumitomo Chemical Company, Limited | Method of manufacturing Group III-V compound semiconductor |
JP3953548B2 (ja) * | 1996-06-24 | 2007-08-08 | シャープ株式会社 | 窒化物系化合物半導体結晶の製造方法 |
JP3725325B2 (ja) * | 1998-03-18 | 2005-12-07 | 株式会社日立製作所 | 半導体製造方法ならびに半導体製造装置 |
JP3658756B2 (ja) | 1999-03-01 | 2005-06-08 | 住友電気工業株式会社 | 化合物半導体の製造方法 |
US6159287A (en) * | 1999-05-07 | 2000-12-12 | Cbl Technologies, Inc. | Truncated susceptor for vapor-phase deposition |
JP3591710B2 (ja) * | 1999-12-08 | 2004-11-24 | ソニー株式会社 | 窒化物系iii−v族化合物層の成長方法およびそれを用いた基板の製造方法 |
JP2001181907A (ja) | 1999-12-22 | 2001-07-03 | Mikio Kuzuu | 磁石付きブラジャー |
JP3553583B2 (ja) * | 1999-12-22 | 2004-08-11 | 日本電気株式会社 | 窒化物の気相成長装置 |
JP3702403B2 (ja) * | 2000-05-24 | 2005-10-05 | 株式会社日鉱マテリアルズ | 気相成長方法 |
US6660606B2 (en) * | 2000-09-29 | 2003-12-09 | Canon Kabushiki Kaisha | Semiconductor-on-insulator annealing method |
US7053413B2 (en) * | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
JP4184789B2 (ja) | 2000-11-30 | 2008-11-19 | ノース・キャロライナ・ステイト・ユニヴァーシティ | M’nベース物質の生成装置及び生成方法 |
JP3631724B2 (ja) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
PL207400B1 (pl) * | 2001-06-06 | 2010-12-31 | Ammono Społka Z Ograniczoną Odpowiedzialnością | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
JP2003078084A (ja) * | 2001-08-30 | 2003-03-14 | Sony Corp | ヒートシンクおよびサブマウント |
US6897495B2 (en) * | 2001-10-31 | 2005-05-24 | The Furukawa Electric Co., Ltd | Field effect transistor and manufacturing method therefor |
JP2004006568A (ja) * | 2002-03-26 | 2004-01-08 | Sumitomo Chem Co Ltd | 3−5族化合物半導体の製造方法 |
JP4117156B2 (ja) | 2002-07-02 | 2008-07-16 | 日本電気株式会社 | Iii族窒化物半導体基板の製造方法 |
US7170095B2 (en) * | 2003-07-11 | 2007-01-30 | Cree Inc. | Semi-insulating GaN and method of making the same |
JP2005101475A (ja) * | 2003-08-28 | 2005-04-14 | Hitachi Cable Ltd | Iii−v族窒化物系半導体基板及びその製造方法 |
JP4396816B2 (ja) * | 2003-10-17 | 2010-01-13 | 日立電線株式会社 | Iii族窒化物半導体基板およびその製造方法 |
US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
JP4359770B2 (ja) | 2003-12-26 | 2009-11-04 | 日立電線株式会社 | Iii−v族窒化物系半導体基板及びその製造ロット |
JP2005209803A (ja) * | 2004-01-21 | 2005-08-04 | Sumitomo Electric Ind Ltd | GaN結晶基板の製造方法 |
GB2415707A (en) * | 2004-06-30 | 2006-01-04 | Arima Optoelectronic | Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm |
JP2007217227A (ja) | 2006-02-16 | 2007-08-30 | Sumitomo Electric Ind Ltd | GaN結晶の製造方法、GaN結晶基板および半導体デバイス |
-
2007
- 2007-03-06 JP JP2007056353A patent/JP4187175B2/ja active Active
- 2007-03-08 KR KR1020087020693A patent/KR101424292B1/ko active IP Right Grant
- 2007-03-08 EP EP07738081A patent/EP1995357A1/en not_active Withdrawn
- 2007-03-08 US US12/282,961 patent/US7794541B2/en active Active
- 2007-03-08 KR KR1020137020916A patent/KR20130098438A/ko not_active Application Discontinuation
- 2007-03-08 WO PCT/JP2007/054591 patent/WO2007119319A1/ja active Application Filing
- 2007-03-13 TW TW096108521A patent/TW200802761A/zh unknown
-
2010
- 2010-02-17 US US12/707,173 patent/US20100140536A1/en not_active Abandoned
- 2010-03-08 US US12/719,465 patent/US20100162945A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20130098438A (ko) | 2013-09-04 |
JP4187175B2 (ja) | 2008-11-26 |
EP1995357A1 (en) | 2008-11-26 |
KR101424292B1 (ko) | 2014-08-01 |
KR20080108980A (ko) | 2008-12-16 |
US20100140536A1 (en) | 2010-06-10 |
US20100162945A1 (en) | 2010-07-01 |
WO2007119319A1 (ja) | 2007-10-25 |
JP2007277077A (ja) | 2007-10-25 |
US20090081110A1 (en) | 2009-03-26 |
US7794541B2 (en) | 2010-09-14 |
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