TW200710567A - Resist compound and resist composition - Google Patents

Resist compound and resist composition

Info

Publication number
TW200710567A
TW200710567A TW095119850A TW95119850A TW200710567A TW 200710567 A TW200710567 A TW 200710567A TW 095119850 A TW095119850 A TW 095119850A TW 95119850 A TW95119850 A TW 95119850A TW 200710567 A TW200710567 A TW 200710567A
Authority
TW
Taiwan
Prior art keywords
group
resist
molecule
compound
resist composition
Prior art date
Application number
TW095119850A
Other languages
English (en)
Chinese (zh)
Inventor
Masatoshi Echigo
Dai Oguro
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of TW200710567A publication Critical patent/TW200710567A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/225—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
    • C07D303/02—Compounds containing oxirane rings
    • C07D303/12—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms
    • C07D303/18—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms by etherified hydroxyl radicals
    • C07D303/20—Ethers with hydroxy compounds containing no oxirane rings
    • C07D303/22—Ethers with hydroxy compounds containing no oxirane rings with monohydroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW095119850A 2005-06-06 2006-06-05 Resist compound and resist composition TW200710567A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005165470 2005-06-06

Publications (1)

Publication Number Publication Date
TW200710567A true TW200710567A (en) 2007-03-16

Family

ID=37498339

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119850A TW200710567A (en) 2005-06-06 2006-06-05 Resist compound and resist composition

Country Status (3)

Country Link
JP (4) JP4998261B2 (ja)
TW (1) TW200710567A (ja)
WO (1) WO2006132139A1 (ja)

Cited By (6)

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CN103415541A (zh) * 2011-03-08 2013-11-27 Dic株式会社 自由基固化性化合物及其固化物、以及该化合物的制造方法
CN104822715A (zh) * 2012-11-28 2015-08-05 Dic株式会社 含酚羟基的化合物、含酚羟基的组合物、含(甲基)丙烯酰基的树脂、固化性组合物、其固化物、及抗蚀剂材料
TWI602805B (zh) * 2013-02-08 2017-10-21 三菱瓦斯化學股份有限公司 新穎烯丙化合物及其製造方法
CN107438596A (zh) * 2016-04-12 2017-12-05 株式会社Lg化学 化合物及包含其的有机电子元件
CN107848946A (zh) * 2015-07-23 2018-03-27 三菱瓦斯化学株式会社 新型(甲基)丙烯酰基化合物及其制造方法
TWI693211B (zh) * 2013-09-30 2020-05-11 日商東京應化工業股份有限公司 含乙烯基之化合物的製造方法

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TWI495632B (zh) * 2004-12-24 2015-08-11 Mitsubishi Gas Chemical Co 光阻用化合物
WO2006132139A1 (ja) * 2005-06-06 2006-12-14 Mitsubishi Gas Chemical Company, Inc. レジスト用化合物およびレジスト組成物
JP5465393B2 (ja) * 2008-02-28 2014-04-09 富士フイルム株式会社 フォトレジスト液、およびこれを用いるエッチング方法
JP5465392B2 (ja) * 2008-02-28 2014-04-09 富士フイルム株式会社 フォトレジスト液、およびこれを用いるエッチング方法
TW200906869A (en) * 2007-05-30 2009-02-16 Toagosei Co Ltd Active energy ray curable composition and optical material
JP2009234997A (ja) * 2008-03-27 2009-10-15 Osaka Gas Co Ltd フルオレン骨格を含有する化合物
WO2009143482A2 (en) * 2008-05-22 2009-11-26 Georgia Tech Research Corporation Negative tone molecular glass resists and methods of making and using same
JP4888473B2 (ja) 2008-11-20 2012-02-29 ソニー株式会社 実装基板
JP5846622B2 (ja) * 2010-12-16 2016-01-20 富士フイルム株式会社 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機ｅｌ表示装置、及び、液晶表示装置
EP2878591B1 (en) * 2012-07-25 2020-09-16 DIC Corporation Radically curable compound, method for producing radically curable compound, radically curable composition, cured product thereof, and composition for resist material
ES2672197T3 (es) 2012-12-20 2018-06-13 Enplas Corporation Emisor de riego por goteo y dispositivo de riego por goteo dotado del mismo
EP2955575B1 (en) 2013-02-08 2020-07-29 Mitsubishi Gas Chemical Company, Inc. Resist composition, resist pattern formation method, and polyphenol derivative used in same
KR101820220B1 (ko) 2013-03-29 2018-01-18 도오꾜오까고오교 가부시끼가이샤 비닐에테르 화합물에서 유래하는 구조 단위를 포함하는 화합물
KR101840528B1 (ko) * 2013-03-29 2018-03-20 도오꾜오까고오교 가부시끼가이샤 비닐기 함유 플루오렌계 화합물
US9914687B2 (en) * 2013-03-29 2018-03-13 Tokyo Ohka Kogyo Co., Ltd. Composition containing vinyl-group-containing compound
JP6370093B2 (ja) * 2013-06-03 2018-08-08 東京応化工業株式会社 ビニル基含有化合物を含有する感光性組成物
JP5741669B2 (ja) * 2013-11-20 2015-07-01 Dic株式会社 アクリル重合体、硬化性組成物、その硬化物、及びレジスト材料用組成物
US10745372B2 (en) * 2014-12-25 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
JP6766803B2 (ja) 2015-03-31 2020-10-14 三菱瓦斯化学株式会社 レジスト組成物、レジストパターン形成方法、及びそれに用いるポリフェノール化合物
CN107533291B (zh) 2015-03-31 2021-06-11 三菱瓦斯化学株式会社 化合物、抗蚀剂组合物及使用其的抗蚀图案形成方法
JP6861950B2 (ja) 2015-07-23 2021-04-21 三菱瓦斯化学株式会社 新規化合物及びその製造方法
CN107924131B (zh) 2015-08-31 2020-12-25 三菱瓦斯化学株式会社 光刻用下层膜形成材料及其组合物用于形成光刻用下层膜的用途、以及抗蚀图案形成方法
US11143962B2 (en) 2015-08-31 2021-10-12 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method
JP6848869B2 (ja) 2015-09-10 2021-03-24 三菱瓦斯化学株式会社 化合物、樹脂、レジスト組成物又は感放射線性組成物、レジストパターン形成方法、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、回路パターンの形成方法、及び、精製方法
WO2018099835A1 (en) 2016-11-30 2018-06-07 Az Electronic Materials (Luxembourg) S.A.R.L. Carbon-comprising underlayer-forming composition and methods for manufacturing carbon-comprising underlayer and device using the same
JP6190557B1 (ja) * 2017-05-01 2017-08-30 株式会社和光精機 部品組付装置
JP2019086545A (ja) 2017-11-01 2019-06-06 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ アリルオキシ誘導体、これを用いたレジスト下層膜形成組成物、ならびにこれを用いたレジスト下層膜および半導体デバイスの製造方法
US11022882B2 (en) * 2018-06-20 2021-06-01 Shin-Etsu Chemical Co., Ltd. Compound and composition for forming organic film
KR102233421B1 (ko) * 2018-07-06 2021-03-29 주식회사 엘지화학 신규한 화합물 및 이를 이용한 유기 발광 소자
WO2020009554A1 (ko) * 2018-07-06 2020-01-09 주식회사 엘지화학 신규한 화합물 및 이를 이용한 유기 발광 소자
CN115028808A (zh) * 2021-03-05 2022-09-09 华为技术有限公司 聚合物材料及其制备方法、组合物、光学部件和设备
KR102632885B1 (ko) * 2021-08-19 2024-02-05 이근수 플루오렌계 유기 화합물, 이를 포함하는 유기막 및 응용

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Cited By (7)

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Publication number Priority date Publication date Assignee Title
CN103415541A (zh) * 2011-03-08 2013-11-27 Dic株式会社 自由基固化性化合物及其固化物、以及该化合物的制造方法
CN104822715A (zh) * 2012-11-28 2015-08-05 Dic株式会社 含酚羟基的化合物、含酚羟基的组合物、含(甲基)丙烯酰基的树脂、固化性组合物、其固化物、及抗蚀剂材料
TWI602805B (zh) * 2013-02-08 2017-10-21 三菱瓦斯化學股份有限公司 新穎烯丙化合物及其製造方法
TWI693211B (zh) * 2013-09-30 2020-05-11 日商東京應化工業股份有限公司 含乙烯基之化合物的製造方法
CN107848946A (zh) * 2015-07-23 2018-03-27 三菱瓦斯化学株式会社 新型(甲基)丙烯酰基化合物及其制造方法
CN107438596A (zh) * 2016-04-12 2017-12-05 株式会社Lg化学 化合物及包含其的有机电子元件
CN107438596B (zh) * 2016-04-12 2020-05-22 株式会社Lg化学 化合物及包含其的有机电子元件

Also Published As

Publication number Publication date
JP5110210B2 (ja) 2012-12-26
WO2006132139A1 (ja) 2006-12-14
JP4998261B2 (ja) 2012-08-15
JP2012093784A (ja) 2012-05-17
JP5182411B2 (ja) 2013-04-17
JPWO2006132139A1 (ja) 2009-01-08
JP2012118551A (ja) 2012-06-21
JP5218682B2 (ja) 2013-06-26
JP2012068652A (ja) 2012-04-05

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