WO2001042855A3 - Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine - Google Patents

Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine Download PDF

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Publication number
WO2001042855A3
WO2001042855A3 PCT/FR2000/003429 FR0003429W WO0142855A3 WO 2001042855 A3 WO2001042855 A3 WO 2001042855A3 FR 0003429 W FR0003429 W FR 0003429W WO 0142855 A3 WO0142855 A3 WO 0142855A3
Authority
WO
WIPO (PCT)
Prior art keywords
range
radiation
source
extreme ultraviolet
spectral band
Prior art date
Application number
PCT/FR2000/003429
Other languages
English (en)
Other versions
WO2001042855A2 (fr
Inventor
Daniele Babonneau
Remy Marmoret
Laurence Bonnet
Original Assignee
Commissariat Energie Atomique
Daniele Babonneau
Remy Marmoret
Laurence Bonnet
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Daniele Babonneau, Remy Marmoret, Laurence Bonnet filed Critical Commissariat Energie Atomique
Priority to EP00988892A priority Critical patent/EP1240551A2/fr
Priority to KR1020027006996A priority patent/KR100695480B1/ko
Priority to JP2001544085A priority patent/JP2003516643A/ja
Priority to US10/130,519 priority patent/US6724465B2/en
Priority to AU25242/01A priority patent/AU2524201A/en
Publication of WO2001042855A2 publication Critical patent/WO2001042855A2/fr
Publication of WO2001042855A3 publication Critical patent/WO2001042855A3/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

Dispositif de lithographie utilisant une source de rayonnement dans le domaine extrême ultraviolet et des miroirs multicouches à large bande spectrale dans ce domaine. Chaque miroir (24, 26, 29) comprend un empilement de couches d'un premier matériau et de couches d'un deuxième matériau alternant avec les précédentes. Le premier matériau a un numéro atomique supérieur à celui du deuxième. L'épaisseur de paires de couches adjacentes est une fonction monotone de la profondeur dans l'empilement. La source (22) comprend au moins une cible (28) qui émet le rayonnement par interaction avec un faisceau laser focalisé sur l'une de ses faces. On utilise une partie (36) du rayonnement émise à partir de l'autre face. L'invention s'applique à la fabrication de circuits intégrés à haut degré d'intégration.
PCT/FR2000/003429 1999-12-08 2000-12-07 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine WO2001042855A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP00988892A EP1240551A2 (fr) 1999-12-08 2000-12-07 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
KR1020027006996A KR100695480B1 (ko) 1999-12-08 2000-12-07 극 자외선 범위에 있는 광선의 소스 및 이 범위에서 넓은스펙트럼 밴드를 가지고 있는 다층 거울들을 사용하는리소그라피 장치
JP2001544085A JP2003516643A (ja) 1999-12-08 2000-12-07 極短紫外領域の放射の光源を用いるリソグラフィ装置、およびこの領域内で広いスペクトル帯域を有する多層膜反射鏡
US10/130,519 US6724465B2 (en) 1999-12-08 2000-12-07 Lithography device which uses a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band in this range
AU25242/01A AU2524201A (en) 1999-12-08 2000-12-07 Lithography device which uses a source of radiation in the extreme ultraviolet range and multi-layered mirrors with broad spectral band in this range

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9915470A FR2802311B1 (fr) 1999-12-08 1999-12-08 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
FR99/15470 1999-12-08

Publications (2)

Publication Number Publication Date
WO2001042855A2 WO2001042855A2 (fr) 2001-06-14
WO2001042855A3 true WO2001042855A3 (fr) 2001-12-27

Family

ID=9553016

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2000/003429 WO2001042855A2 (fr) 1999-12-08 2000-12-07 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine

Country Status (10)

Country Link
US (1) US6724465B2 (fr)
EP (1) EP1240551A2 (fr)
JP (1) JP2003516643A (fr)
KR (1) KR100695480B1 (fr)
CN (1) CN1222829C (fr)
AU (1) AU2524201A (fr)
FR (1) FR2802311B1 (fr)
RU (1) RU2249840C2 (fr)
TW (1) TW539911B (fr)
WO (1) WO2001042855A2 (fr)

Families Citing this family (26)

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Publication number Priority date Publication date Assignee Title
FR2801113B1 (fr) * 1999-11-15 2003-05-09 Commissariat Energie Atomique Procede d'obtention et source de rayonnement extreme ultra violet, application en lithographie
JP4298336B2 (ja) * 2002-04-26 2009-07-15 キヤノン株式会社 露光装置、光源装置及びデバイス製造方法
JP3944008B2 (ja) 2002-06-28 2007-07-11 キヤノン株式会社 反射ミラー装置及び露光装置及びデバイス製造方法
US20040130693A1 (en) * 2002-10-31 2004-07-08 Asml Netherlands B.V. Lithographic apparatus, optical element and device manufacturing method
DE10318562A1 (de) * 2003-04-24 2004-11-11 Carl Zeiss Sms Gmbh Anordnung zur Inspektion von Objekten, insbesondere von Masken in der Mikrolithographie
EP3389056A1 (fr) * 2003-06-02 2018-10-17 Nikon Corporation Réflecteur à films multicouche et système d'exposition aux rayons x
FR2859545B1 (fr) * 2003-09-05 2005-11-11 Commissariat Energie Atomique Procede et dispositif de lithographie par rayonnement dans l'extreme utraviolet
CN100449690C (zh) * 2003-10-15 2009-01-07 株式会社尼康 多层膜反射镜、多层膜反射镜的制造方法及曝光系统
EP1675164B2 (fr) * 2003-10-15 2019-07-03 Nikon Corporation Miroir a films multicouches, procede de production d'un miroir a films multicouches, et systeme d'exposition
EP1624467A3 (fr) * 2003-10-20 2007-05-30 ASML Netherlands BV Appareil lithographique et procédé de fabrication d'un composant
DE10359102A1 (de) * 2003-12-17 2005-07-21 Carl Zeiss Smt Ag Optische Komponente umfassend ein Material mit einer vorbestimmten Homogenität der thermischen Längsausdehnung
JP4532991B2 (ja) * 2004-05-26 2010-08-25 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
FR2871622B1 (fr) * 2004-06-14 2008-09-12 Commissariat Energie Atomique Dispositif de generation de lumiere dans l'extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet
US7336416B2 (en) * 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
KR101236043B1 (ko) * 2006-07-14 2013-02-21 가부시키가이샤 니콘 스테이지 장치, 노광 장치 및 디바이스 제조 방법
US9082521B2 (en) 2009-02-13 2015-07-14 Asml Netherlands B.V. EUV multilayer mirror with interlayer and lithographic apparatus using the mirror
DE102011010462A1 (de) * 2011-01-28 2012-08-02 Carl Zeiss Laser Optics Gmbh Optische Anordnung für eine EUV-Projektionsbelichtungsanlage sowie Verfahren zum Kühlen eines optischen Bauelements
FR2984584A1 (fr) * 2011-12-20 2013-06-21 Commissariat Energie Atomique Dispositif de filtrage des rayons x
RU2510641C2 (ru) * 2012-04-19 2014-04-10 Рубен Павлович Сейсян Фильтр спектральный очистки для эуф-нанолитографа и способ его изготовления
TWI558044B (zh) * 2014-12-09 2016-11-11 國立清華大學 連續光譜產生裝置及其組裝方法
EP3145036B1 (fr) 2015-09-17 2020-03-18 Academia Sinica Appareil et procédé de génération de supercontinuum
FR3059434B1 (fr) * 2016-11-29 2019-05-17 Centre National De La Recherche Scientifique - Cnrs Composant de selection spectrale pour radiations xuv
JP7155148B2 (ja) * 2017-04-11 2022-10-18 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および冷却方法
EP3811141A4 (fr) * 2018-08-27 2022-03-23 KLA Corporation Vapeur utilisée comme agent de protection et d'extension de durée de vie dans des systèmes optiques
US10613444B2 (en) * 2018-08-28 2020-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus and method of operating the same
FR3088514B1 (fr) * 2018-11-12 2020-11-20 Centre Tech Alphanov Source et procede de generation de rayons x par interaction laser avec une cible

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Also Published As

Publication number Publication date
EP1240551A2 (fr) 2002-09-18
KR20030009329A (ko) 2003-01-29
WO2001042855A2 (fr) 2001-06-14
RU2249840C2 (ru) 2005-04-10
US6724465B2 (en) 2004-04-20
RU2002118110A (ru) 2004-03-20
JP2003516643A (ja) 2003-05-13
AU2524201A (en) 2001-06-18
FR2802311B1 (fr) 2002-01-18
TW539911B (en) 2003-07-01
CN1433531A (zh) 2003-07-30
CN1222829C (zh) 2005-10-12
FR2802311A1 (fr) 2001-06-15
KR100695480B1 (ko) 2007-03-14
US20020171817A1 (en) 2002-11-21

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