FR2802311B1 - Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine - Google Patents

Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine

Info

Publication number
FR2802311B1
FR2802311B1 FR9915470A FR9915470A FR2802311B1 FR 2802311 B1 FR2802311 B1 FR 2802311B1 FR 9915470 A FR9915470 A FR 9915470A FR 9915470 A FR9915470 A FR 9915470A FR 2802311 B1 FR2802311 B1 FR 2802311B1
Authority
FR
France
Prior art keywords
area
extreme ultraviolet
spectral band
lithography device
radiation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9915470A
Other languages
English (en)
Other versions
FR2802311A1 (fr
Inventor
Daniele Babonneau
Remy Marmoret
Laurence Bonnet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9915470A priority Critical patent/FR2802311B1/fr
Priority to TW089125049A priority patent/TW539911B/zh
Priority to KR1020027006996A priority patent/KR100695480B1/ko
Priority to JP2001544085A priority patent/JP2003516643A/ja
Priority to RU2002118110/28A priority patent/RU2249840C2/ru
Priority to US10/130,519 priority patent/US6724465B2/en
Priority to EP00988892A priority patent/EP1240551A2/fr
Priority to CNB008188807A priority patent/CN1222829C/zh
Priority to PCT/FR2000/003429 priority patent/WO2001042855A2/fr
Priority to AU25242/01A priority patent/AU2524201A/en
Publication of FR2802311A1 publication Critical patent/FR2802311A1/fr
Application granted granted Critical
Publication of FR2802311B1 publication Critical patent/FR2802311B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
FR9915470A 1999-12-08 1999-12-08 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine Expired - Fee Related FR2802311B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR9915470A FR2802311B1 (fr) 1999-12-08 1999-12-08 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
TW089125049A TW539911B (en) 1999-12-08 2000-11-24 Lithography device using a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band within this range
JP2001544085A JP2003516643A (ja) 1999-12-08 2000-12-07 極短紫外領域の放射の光源を用いるリソグラフィ装置、およびこの領域内で広いスペクトル帯域を有する多層膜反射鏡
RU2002118110/28A RU2249840C2 (ru) 1999-12-08 2000-12-07 Литографическое устройство
US10/130,519 US6724465B2 (en) 1999-12-08 2000-12-07 Lithography device which uses a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band in this range
EP00988892A EP1240551A2 (fr) 1999-12-08 2000-12-07 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
KR1020027006996A KR100695480B1 (ko) 1999-12-08 2000-12-07 극 자외선 범위에 있는 광선의 소스 및 이 범위에서 넓은스펙트럼 밴드를 가지고 있는 다층 거울들을 사용하는리소그라피 장치
CNB008188807A CN1222829C (zh) 1999-12-08 2000-12-07 应用远紫外区辐射源和在该区具有宽光谱带的多层镜的光刻设备
PCT/FR2000/003429 WO2001042855A2 (fr) 1999-12-08 2000-12-07 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
AU25242/01A AU2524201A (en) 1999-12-08 2000-12-07 Lithography device which uses a source of radiation in the extreme ultraviolet range and multi-layered mirrors with broad spectral band in this range

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9915470A FR2802311B1 (fr) 1999-12-08 1999-12-08 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine

Publications (2)

Publication Number Publication Date
FR2802311A1 FR2802311A1 (fr) 2001-06-15
FR2802311B1 true FR2802311B1 (fr) 2002-01-18

Family

ID=9553016

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9915470A Expired - Fee Related FR2802311B1 (fr) 1999-12-08 1999-12-08 Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine

Country Status (10)

Country Link
US (1) US6724465B2 (fr)
EP (1) EP1240551A2 (fr)
JP (1) JP2003516643A (fr)
KR (1) KR100695480B1 (fr)
CN (1) CN1222829C (fr)
AU (1) AU2524201A (fr)
FR (1) FR2802311B1 (fr)
RU (1) RU2249840C2 (fr)
TW (1) TW539911B (fr)
WO (1) WO2001042855A2 (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2801113B1 (fr) * 1999-11-15 2003-05-09 Commissariat Energie Atomique Procede d'obtention et source de rayonnement extreme ultra violet, application en lithographie
JP4298336B2 (ja) * 2002-04-26 2009-07-15 キヤノン株式会社 露光装置、光源装置及びデバイス製造方法
JP3944008B2 (ja) * 2002-06-28 2007-07-11 キヤノン株式会社 反射ミラー装置及び露光装置及びデバイス製造方法
US20040130693A1 (en) * 2002-10-31 2004-07-08 Asml Netherlands B.V. Lithographic apparatus, optical element and device manufacturing method
DE10318562A1 (de) * 2003-04-24 2004-11-11 Carl Zeiss Sms Gmbh Anordnung zur Inspektion von Objekten, insbesondere von Masken in der Mikrolithographie
JP4356696B2 (ja) * 2003-06-02 2009-11-04 株式会社ニコン 多層膜反射鏡及びｘ線露光装置
FR2859545B1 (fr) * 2003-09-05 2005-11-11 Commissariat Energie Atomique Procede et dispositif de lithographie par rayonnement dans l'extreme utraviolet
CN100449690C (zh) * 2003-10-15 2009-01-07 株式会社尼康 多层膜反射镜、多层膜反射镜的制造方法及曝光系统
JP4466566B2 (ja) 2003-10-15 2010-05-26 株式会社ニコン 多層膜反射鏡、多層膜反射鏡の製造方法、及び露光装置
EP1624467A3 (fr) * 2003-10-20 2007-05-30 ASML Netherlands BV Appareil lithographique et procédé de fabrication d'un composant
DE10359102A1 (de) * 2003-12-17 2005-07-21 Carl Zeiss Smt Ag Optische Komponente umfassend ein Material mit einer vorbestimmten Homogenität der thermischen Längsausdehnung
JP4532991B2 (ja) * 2004-05-26 2010-08-25 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
FR2871622B1 (fr) * 2004-06-14 2008-09-12 Commissariat Energie Atomique Dispositif de generation de lumiere dans l'extreme ultraviolet et application a une source de lithographie par rayonnement dans l'extreme ultraviolet
US7336416B2 (en) * 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
KR101236043B1 (ko) * 2006-07-14 2013-02-21 가부시키가이샤 니콘 스테이지 장치, 노광 장치 및 디바이스 제조 방법
NL2004081A (en) 2009-02-13 2010-08-16 Asml Netherlands Bv Multilayer mirror and lithographic apparatus.
DE102011010462A1 (de) * 2011-01-28 2012-08-02 Carl Zeiss Laser Optics Gmbh Optische Anordnung für eine EUV-Projektionsbelichtungsanlage sowie Verfahren zum Kühlen eines optischen Bauelements
FR2984584A1 (fr) * 2011-12-20 2013-06-21 Commissariat Energie Atomique Dispositif de filtrage des rayons x
RU2510641C2 (ru) * 2012-04-19 2014-04-10 Рубен Павлович Сейсян Фильтр спектральный очистки для эуф-нанолитографа и способ его изготовления
TWI558044B (zh) * 2014-12-09 2016-11-11 國立清華大學 連續光譜產生裝置及其組裝方法
EP3145036B1 (fr) 2015-09-17 2020-03-18 Academia Sinica Appareil et procédé de génération de supercontinuum
FR3059434B1 (fr) * 2016-11-29 2019-05-17 Centre National De La Recherche Scientifique - Cnrs Composant de selection spectrale pour radiations xuv
SG11201908803XA (en) * 2017-04-11 2019-10-30 Asml Netherlands Bv Lithographic apparatus and cooling method
US10613444B2 (en) * 2018-08-28 2020-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus and method of operating the same
FR3088514B1 (fr) * 2018-11-12 2020-11-20 Centre Tech Alphanov Source et procede de generation de rayons x par interaction laser avec une cible

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US4684565A (en) * 1984-11-20 1987-08-04 Exxon Research And Engineering Company X-ray mirrors made from multi-layered material
US5310603A (en) * 1986-10-01 1994-05-10 Canon Kabushiki Kaisha Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray
JP2576278B2 (ja) * 1990-08-31 1997-01-29 株式会社島津製作所 Ｘ線発生装置
JP3127511B2 (ja) * 1991-09-19 2001-01-29 株式会社日立製作所 露光装置および半導体装置の製造方法
JP3385644B2 (ja) * 1993-03-26 2003-03-10 株式会社ニコン レーザープラズマｘ線源
US5646976A (en) * 1994-08-01 1997-07-08 Osmic, Inc. Optical element of multilayered thin film for X-rays and neutrons
JPH11126745A (ja) * 1997-10-24 1999-05-11 Toyota Max:Kk Ｘ線縮小露光リソグラフ用光源装置
US6228512B1 (en) * 1999-05-26 2001-05-08 The Regents Of The University Of California MoRu/Be multilayers for extreme ultraviolet applications
JP2001027699A (ja) * 1999-07-14 2001-01-30 Nikon Corp 多層膜反射鏡および反射光学系
JP2001057328A (ja) * 1999-08-18 2001-02-27 Nikon Corp 反射マスク、露光装置および集積回路の製造方法

Also Published As

Publication number Publication date
WO2001042855A2 (fr) 2001-06-14
WO2001042855A3 (fr) 2001-12-27
TW539911B (en) 2003-07-01
KR20030009329A (ko) 2003-01-29
US6724465B2 (en) 2004-04-20
CN1222829C (zh) 2005-10-12
RU2249840C2 (ru) 2005-04-10
EP1240551A2 (fr) 2002-09-18
KR100695480B1 (ko) 2007-03-14
JP2003516643A (ja) 2003-05-13
AU2524201A (en) 2001-06-18
FR2802311A1 (fr) 2001-06-15
US20020171817A1 (en) 2002-11-21
CN1433531A (zh) 2003-07-30
RU2002118110A (ru) 2004-03-20

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Effective date: 20090831