ATE418748T1 - Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit - Google Patents
Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damitInfo
- Publication number
- ATE418748T1 ATE418748T1 AT06019979T AT06019979T ATE418748T1 AT E418748 T1 ATE418748 T1 AT E418748T1 AT 06019979 T AT06019979 T AT 06019979T AT 06019979 T AT06019979 T AT 06019979T AT E418748 T1 ATE418748 T1 AT E418748T1
- Authority
- AT
- Austria
- Prior art keywords
- therefrom
- light sensitive
- sensitive composition
- integer
- positive light
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005278297 | 2005-09-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE418748T1 true ATE418748T1 (de) | 2009-01-15 |
Family
ID=37697938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06019979T ATE418748T1 (de) | 2005-09-26 | 2006-09-25 | Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070072118A1 (de) |
EP (1) | EP1767993B1 (de) |
AT (1) | ATE418748T1 (de) |
DE (1) | DE602006004413D1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007108581A (ja) * | 2005-10-17 | 2007-04-26 | Fujifilm Corp | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
JP2008083385A (ja) * | 2006-09-27 | 2008-04-10 | Fujifilm Corp | 感光性組成物及びそれを用いたパターン形成方法 |
US20080171270A1 (en) * | 2007-01-16 | 2008-07-17 | Munirathna Padmanaban | Polymers Useful in Photoresist Compositions and Compositions Thereof |
JP4917969B2 (ja) * | 2007-06-01 | 2012-04-18 | 東京応化工業株式会社 | 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 |
US8252503B2 (en) * | 2007-08-24 | 2012-08-28 | Az Electronic Materials Usa Corp. | Photoresist compositions |
JP6942052B2 (ja) | 2015-10-16 | 2021-09-29 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
CN114262404B (zh) * | 2020-09-16 | 2023-06-30 | 宁波南大光电材料有限公司 | 光敏树脂及应用该光敏树脂的光刻胶组合物 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7241551B2 (en) * | 2003-06-09 | 2007-07-10 | Fujifilm Corporation | Positive-working resist composition |
US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
US7033728B2 (en) * | 2003-12-29 | 2006-04-25 | Az Electronic Materials Usa Corp. | Photoresist composition |
US7906268B2 (en) * | 2004-03-18 | 2011-03-15 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
JP2007041200A (ja) * | 2005-08-02 | 2007-02-15 | Fujifilm Corp | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
-
2006
- 2006-09-25 US US11/525,911 patent/US20070072118A1/en not_active Abandoned
- 2006-09-25 AT AT06019979T patent/ATE418748T1/de not_active IP Right Cessation
- 2006-09-25 EP EP06019979A patent/EP1767993B1/de not_active Not-in-force
- 2006-09-25 DE DE602006004413T patent/DE602006004413D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
DE602006004413D1 (de) | 2009-02-05 |
US20070072118A1 (en) | 2007-03-29 |
EP1767993B1 (de) | 2008-12-24 |
EP1767993A1 (de) | 2007-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |