ATE418748T1 - Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit - Google Patents

Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit

Info

Publication number
ATE418748T1
ATE418748T1 AT06019979T AT06019979T ATE418748T1 AT E418748 T1 ATE418748 T1 AT E418748T1 AT 06019979 T AT06019979 T AT 06019979T AT 06019979 T AT06019979 T AT 06019979T AT E418748 T1 ATE418748 T1 AT E418748T1
Authority
AT
Austria
Prior art keywords
therefrom
light sensitive
sensitive composition
integer
positive light
Prior art date
Application number
AT06019979T
Other languages
English (en)
Inventor
Fumiyuki Nishiyama
Kunihiko Kodama
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of ATE418748T1 publication Critical patent/ATE418748T1/de

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT06019979T 2005-09-26 2006-09-25 Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit ATE418748T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005278297 2005-09-26

Publications (1)

Publication Number Publication Date
ATE418748T1 true ATE418748T1 (de) 2009-01-15

Family

ID=37697938

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06019979T ATE418748T1 (de) 2005-09-26 2006-09-25 Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit

Country Status (4)

Country Link
US (1) US20070072118A1 (de)
EP (1) EP1767993B1 (de)
AT (1) ATE418748T1 (de)
DE (1) DE602006004413D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007108581A (ja) * 2005-10-17 2007-04-26 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法
JP2008083385A (ja) * 2006-09-27 2008-04-10 Fujifilm Corp 感光性組成物及びそれを用いたパターン形成方法
US20080171270A1 (en) * 2007-01-16 2008-07-17 Munirathna Padmanaban Polymers Useful in Photoresist Compositions and Compositions Thereof
JP4917969B2 (ja) * 2007-06-01 2012-04-18 東京応化工業株式会社 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法
US8252503B2 (en) * 2007-08-24 2012-08-28 Az Electronic Materials Usa Corp. Photoresist compositions
JP6942052B2 (ja) 2015-10-16 2021-09-29 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
CN114262404B (zh) * 2020-09-16 2023-06-30 宁波南大光电材料有限公司 光敏树脂及应用该光敏树脂的光刻胶组合物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7241551B2 (en) * 2003-06-09 2007-07-10 Fujifilm Corporation Positive-working resist composition
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US7033728B2 (en) * 2003-12-29 2006-04-25 Az Electronic Materials Usa Corp. Photoresist composition
US7906268B2 (en) * 2004-03-18 2011-03-15 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
JP2007041200A (ja) * 2005-08-02 2007-02-15 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
DE602006004413D1 (de) 2009-02-05
US20070072118A1 (en) 2007-03-29
EP1767993B1 (de) 2008-12-24
EP1767993A1 (de) 2007-03-28

Similar Documents

Publication Publication Date Title
TW200734822A (en) Positive resist composition and pattern forming method using the same
TW200710576A (en) Positive resist composition and method of pattern formation with the same
ATE418748T1 (de) Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit
ATE393413T1 (de) Positive lichtempfindliche zusammensetzung und verfahren zur strukturformung damit
TW200728922A (en) Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
TW200715058A (en) Positive resist composition and pattern-forming method using the same
ATE434776T1 (de) Positive resistzusammensetzung und verfahren zur strukturformung damit
TW200741348A (en) Positive resist composition and pattern forming method using the same
TW200732842A (en) Positive resist composition and pattern forming method using the same
JP2004004834A5 (de)
EP1975716A3 (de) Positive Resistzusammensetzung und Verfahren zur Strukturformung
TW200727081A (en) Positive resist composition and pattern forming method using the same
EP1480079A8 (de) Photoempfindliche Harzzusammensetzung
JP2004302198A5 (de)
ATE521016T1 (de) Verwendung einer positiven resist-zusammensetzung für immersions-lithographie, positive resist- zusammensetzung und immersions-lithographische strukturierungsmethode mit benutzung derselbigen
EP1367440A3 (de) Positiv arbeitende resistzusammensetzung
TW200712777A (en) Positive photosensitive resin composition, uses thereof, and method for forming positive pattern
TW201239536A (en) Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device
TW200725181A (en) Positive resist composition and pattern forming method using the same
EP2329320A4 (de) Positive resistzusammensetzung für immersionsbelichtung und strukturformungsverfahren
ATE445862T1 (de) Positive resistzusammensetzung und verfahren zur strukturformung damit
TW200632557A (en) Positive resist composition for immersion exposure and pattern-forming method using the same
EP2042925A3 (de) Resistzusammensetzung und Verfahren zur Strukturformung damit
JP2001183837A5 (de)
JP2004310004A5 (de)

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties