TW200745010A - Compound having acid dissociable group and radiation sensitive composition containing the same - Google Patents

Compound having acid dissociable group and radiation sensitive composition containing the same

Info

Publication number
TW200745010A
TW200745010A TW096105273A TW96105273A TW200745010A TW 200745010 A TW200745010 A TW 200745010A TW 096105273 A TW096105273 A TW 096105273A TW 96105273 A TW96105273 A TW 96105273A TW 200745010 A TW200745010 A TW 200745010A
Authority
TW
Taiwan
Prior art keywords
radiation
acid
sensitive composition
sensitive
compound
Prior art date
Application number
TW096105273A
Other languages
Chinese (zh)
Inventor
Daisuke Shimizu
Toshiyuki Kai
Nobuji Matsumura
Ken Maruyama
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200745010A publication Critical patent/TW200745010A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/23—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing hydroxy or O-metal groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/73—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
    • C07C69/734—Ethers
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/96—Esters of carbonic or haloformic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

This invention provides a radiation-sensitive composition that can form a resist film which is effectively sensitive to electron beams or extreme ultraviolet light, is excellent in roughness, etching resistance, and sensitivity, and can form a fine pattern in a highly accurate and stable manner. The radiation-sensitive composition comprises (a) an acid-dissociative group-containing compound for use in resist film formation, obtained by substituting, by an acid-dissociative group, at least one of hydroxyl groups in a precursor compound containing 2 to 5 hydroxyl groups and 2 to 5 aromatic rings and having a weight average molecular weight of 290 to 600 as measured by gel permeation chromatography (GPC) using a polystyrene standard, and (b) a radiation-sensitive acid generator which generates acid upon radiation irradiation.
TW096105273A 2006-02-17 2007-02-13 Compound having acid dissociable group and radiation sensitive composition containing the same TW200745010A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006041205 2006-02-17
JP2006295950 2006-10-31

Publications (1)

Publication Number Publication Date
TW200745010A true TW200745010A (en) 2007-12-16

Family

ID=38371613

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105273A TW200745010A (en) 2006-02-17 2007-02-13 Compound having acid dissociable group and radiation sensitive composition containing the same

Country Status (3)

Country Link
JP (1) JP5029598B2 (en)
TW (1) TW200745010A (en)
WO (1) WO2007094436A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4855293B2 (en) * 2007-02-13 2012-01-18 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP4929110B2 (en) * 2007-09-25 2012-05-09 株式会社東芝 Photosensitive composition and pattern forming method using the same
JP5266842B2 (en) * 2008-03-31 2013-08-21 大日本印刷株式会社 Positive resist composition and pattern formation method using the positive resist composition
JP6401982B2 (en) * 2014-09-10 2018-10-10 株式会社Adeka Latent additive and photosensitive composition
JP7216897B2 (en) * 2017-02-23 2023-02-02 三菱瓦斯化学株式会社 Compound, resin, composition, pattern forming method and purification method
JP6341317B2 (en) * 2017-04-19 2018-06-13 Jsr株式会社 Polymer, resin film and electronic parts

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3282330B2 (en) * 1993-01-13 2002-05-13 荒川化学工業株式会社 Polyhydric phenolic compound and method for producing polyhydric phenolic compound
JPH08337547A (en) * 1995-04-10 1996-12-24 Arakawa Chem Ind Co Ltd Production of phenolic resin oligomer
JP2000010269A (en) * 1998-06-19 2000-01-14 Jsr Corp Radiation sensitive resin composition
JP2001051419A (en) * 1999-08-06 2001-02-23 Jsr Corp Radiation sensitive resin composition
JP2002099089A (en) * 2000-09-26 2002-04-05 Yasuhiko Shirota Radiation sensitive composition
JP2002099088A (en) * 2000-09-26 2002-04-05 Yasuhiko Shirota Radiation sensitive composition
JP2002268212A (en) * 2001-03-09 2002-09-18 Jsr Corp Radiation sensitive resin composition
JP2002278060A (en) * 2001-03-16 2002-09-27 Jsr Corp Radiation sensitive resin composition
JP2003183227A (en) * 2001-10-02 2003-07-03 Osaka Industrial Promotion Organization New organic compound
JP4484479B2 (en) * 2002-09-27 2010-06-16 大阪瓦斯株式会社 Fluorene derivatives and photoactive compounds
EP1666970A4 (en) * 2003-09-18 2009-09-02 Mitsubishi Gas Chemical Co Compound for resist and radiation-sensitive composition
JP2005170902A (en) * 2003-12-15 2005-06-30 Jsr Corp New compound and radiation-sensitive resin composition
JP4444854B2 (en) * 2005-02-25 2010-03-31 東京応化工業株式会社 Positive resist composition, resist pattern forming method and compound

Also Published As

Publication number Publication date
WO2007094436A1 (en) 2007-08-23
JP5029598B2 (en) 2012-09-19
JPWO2007094436A1 (en) 2009-07-09

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