TW200745010A - Compound having acid dissociable group and radiation sensitive composition containing the same - Google Patents
Compound having acid dissociable group and radiation sensitive composition containing the sameInfo
- Publication number
- TW200745010A TW200745010A TW096105273A TW96105273A TW200745010A TW 200745010 A TW200745010 A TW 200745010A TW 096105273 A TW096105273 A TW 096105273A TW 96105273 A TW96105273 A TW 96105273A TW 200745010 A TW200745010 A TW 200745010A
- Authority
- TW
- Taiwan
- Prior art keywords
- radiation
- acid
- sensitive composition
- sensitive
- compound
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/23—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing hydroxy or O-metal groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
- C07C69/73—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
- C07C69/734—Ethers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/96—Esters of carbonic or haloformic acids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
This invention provides a radiation-sensitive composition that can form a resist film which is effectively sensitive to electron beams or extreme ultraviolet light, is excellent in roughness, etching resistance, and sensitivity, and can form a fine pattern in a highly accurate and stable manner. The radiation-sensitive composition comprises (a) an acid-dissociative group-containing compound for use in resist film formation, obtained by substituting, by an acid-dissociative group, at least one of hydroxyl groups in a precursor compound containing 2 to 5 hydroxyl groups and 2 to 5 aromatic rings and having a weight average molecular weight of 290 to 600 as measured by gel permeation chromatography (GPC) using a polystyrene standard, and (b) a radiation-sensitive acid generator which generates acid upon radiation irradiation.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006041205 | 2006-02-17 | ||
JP2006295950 | 2006-10-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200745010A true TW200745010A (en) | 2007-12-16 |
Family
ID=38371613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096105273A TW200745010A (en) | 2006-02-17 | 2007-02-13 | Compound having acid dissociable group and radiation sensitive composition containing the same |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5029598B2 (en) |
TW (1) | TW200745010A (en) |
WO (1) | WO2007094436A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4855293B2 (en) * | 2007-02-13 | 2012-01-18 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
JP4929110B2 (en) * | 2007-09-25 | 2012-05-09 | 株式会社東芝 | Photosensitive composition and pattern forming method using the same |
JP5266842B2 (en) * | 2008-03-31 | 2013-08-21 | 大日本印刷株式会社 | Positive resist composition and pattern formation method using the positive resist composition |
JP6401982B2 (en) * | 2014-09-10 | 2018-10-10 | 株式会社Adeka | Latent additive and photosensitive composition |
JP7216897B2 (en) * | 2017-02-23 | 2023-02-02 | 三菱瓦斯化学株式会社 | Compound, resin, composition, pattern forming method and purification method |
JP6341317B2 (en) * | 2017-04-19 | 2018-06-13 | Jsr株式会社 | Polymer, resin film and electronic parts |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3282330B2 (en) * | 1993-01-13 | 2002-05-13 | 荒川化学工業株式会社 | Polyhydric phenolic compound and method for producing polyhydric phenolic compound |
JPH08337547A (en) * | 1995-04-10 | 1996-12-24 | Arakawa Chem Ind Co Ltd | Production of phenolic resin oligomer |
JP2000010269A (en) * | 1998-06-19 | 2000-01-14 | Jsr Corp | Radiation sensitive resin composition |
JP2001051419A (en) * | 1999-08-06 | 2001-02-23 | Jsr Corp | Radiation sensitive resin composition |
JP2002099089A (en) * | 2000-09-26 | 2002-04-05 | Yasuhiko Shirota | Radiation sensitive composition |
JP2002099088A (en) * | 2000-09-26 | 2002-04-05 | Yasuhiko Shirota | Radiation sensitive composition |
JP2002268212A (en) * | 2001-03-09 | 2002-09-18 | Jsr Corp | Radiation sensitive resin composition |
JP2002278060A (en) * | 2001-03-16 | 2002-09-27 | Jsr Corp | Radiation sensitive resin composition |
JP2003183227A (en) * | 2001-10-02 | 2003-07-03 | Osaka Industrial Promotion Organization | New organic compound |
JP4484479B2 (en) * | 2002-09-27 | 2010-06-16 | 大阪瓦斯株式会社 | Fluorene derivatives and photoactive compounds |
EP1666970A4 (en) * | 2003-09-18 | 2009-09-02 | Mitsubishi Gas Chemical Co | Compound for resist and radiation-sensitive composition |
JP2005170902A (en) * | 2003-12-15 | 2005-06-30 | Jsr Corp | New compound and radiation-sensitive resin composition |
JP4444854B2 (en) * | 2005-02-25 | 2010-03-31 | 東京応化工業株式会社 | Positive resist composition, resist pattern forming method and compound |
-
2007
- 2007-02-13 TW TW096105273A patent/TW200745010A/en unknown
- 2007-02-15 JP JP2008500554A patent/JP5029598B2/en active Active
- 2007-02-15 WO PCT/JP2007/052784 patent/WO2007094436A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2007094436A1 (en) | 2007-08-23 |
JP5029598B2 (en) | 2012-09-19 |
JPWO2007094436A1 (en) | 2009-07-09 |
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