TW200703618A - Semiconductor device and method for producing the same - Google Patents

Semiconductor device and method for producing the same

Info

Publication number
TW200703618A
TW200703618A TW095111172A TW95111172A TW200703618A TW 200703618 A TW200703618 A TW 200703618A TW 095111172 A TW095111172 A TW 095111172A TW 95111172 A TW95111172 A TW 95111172A TW 200703618 A TW200703618 A TW 200703618A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
potential
withstand voltage
producing
same
Prior art date
Application number
TW095111172A
Other languages
English (en)
Other versions
TWI298534B (en
Inventor
Kazuhiro Shimizu
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200703618A publication Critical patent/TW200703618A/zh
Application granted granted Critical
Publication of TWI298534B publication Critical patent/TWI298534B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
TW095111172A 2005-07-15 2006-03-30 Semiconductor device and method for producing the same TWI298534B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005206616A JP4863665B2 (ja) 2005-07-15 2005-07-15 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200703618A true TW200703618A (en) 2007-01-16
TWI298534B TWI298534B (en) 2008-07-01

Family

ID=37563654

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111172A TWI298534B (en) 2005-07-15 2006-03-30 Semiconductor device and method for producing the same

Country Status (6)

Country Link
US (2) US7582946B2 (zh)
JP (1) JP4863665B2 (zh)
KR (1) KR100756306B1 (zh)
CN (1) CN100550381C (zh)
DE (1) DE102006029499B4 (zh)
TW (1) TWI298534B (zh)

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JP4914589B2 (ja) * 2005-08-26 2012-04-11 三菱電機株式会社 半導体製造装置、半導体製造方法および半導体装置
EP1852916A1 (en) * 2006-05-05 2007-11-07 Austriamicrosystems AG High voltage transistor
US8097921B2 (en) * 2007-11-09 2012-01-17 Denso Corporation Semiconductor device with high-breakdown-voltage transistor
JP5358089B2 (ja) * 2007-12-21 2013-12-04 スパンション エルエルシー 半導体装置
JP2009238980A (ja) * 2008-03-27 2009-10-15 Hitachi Ltd 半導体装置及びその製造方法
JP4797203B2 (ja) 2008-12-17 2011-10-19 三菱電機株式会社 半導体装置
JP5499915B2 (ja) * 2009-06-10 2014-05-21 富士電機株式会社 高耐圧半導体装置
JP2011029466A (ja) * 2009-07-28 2011-02-10 Hitachi Ltd 半導体装置
JP5458809B2 (ja) 2009-11-02 2014-04-02 富士電機株式会社 半導体装置
JP5505499B2 (ja) * 2010-06-04 2014-05-28 富士電機株式会社 半導体装置および駆動回路
US8618627B2 (en) * 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
JP5636827B2 (ja) * 2010-08-31 2014-12-10 株式会社デンソー 半導体装置
JP5565309B2 (ja) * 2010-12-29 2014-08-06 三菱電機株式会社 半導体装置
US8631371B2 (en) 2011-06-29 2014-01-14 International Business Machines Corporation Method, system and program storage device for modeling the capacitance associated with a diffusion region of a silicon-on-insulator device
CN102683262A (zh) * 2012-04-28 2012-09-19 东南大学 一种基于绝缘体上硅的高压隔离结构
JP6009341B2 (ja) * 2012-12-13 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6115408B2 (ja) 2013-08-29 2017-04-19 三菱電機株式会社 半導体装置
US9570437B2 (en) * 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
CN104465722B (zh) * 2014-12-09 2017-06-06 上海华虹宏力半导体制造有限公司 高压隔离环结构
JP6492903B2 (ja) * 2015-04-08 2019-04-03 富士電機株式会社 半導体装置
DE112017000081B4 (de) * 2016-03-14 2022-12-29 Fuji Electric Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren
TWI608606B (zh) 2017-01-26 2017-12-11 新唐科技股份有限公司 電平位移器以及半導體元件
JP6729487B2 (ja) * 2017-05-15 2020-07-22 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
KR102227666B1 (ko) * 2017-05-31 2021-03-12 주식회사 키 파운드리 고전압 반도체 소자

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US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
JP3917211B2 (ja) * 1996-04-15 2007-05-23 三菱電機株式会社 半導体装置
JP3893185B2 (ja) 1996-05-14 2007-03-14 三菱電機株式会社 半導体装置
JP3850146B2 (ja) 1998-07-07 2006-11-29 三菱電機株式会社 分離構造とその分離構造を備える半導体装置
JP4206543B2 (ja) * 1999-02-02 2009-01-14 株式会社デンソー 半導体装置
JP2001025235A (ja) * 1999-07-07 2001-01-26 Mitsubishi Electric Corp 駆動装置および電力変換装置
JP4471480B2 (ja) * 2000-10-18 2010-06-02 三菱電機株式会社 半導体装置
JP4610786B2 (ja) * 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
JP3654872B2 (ja) * 2001-06-04 2005-06-02 松下電器産業株式会社 高耐圧半導体装置
JP4094984B2 (ja) 2003-04-24 2008-06-04 三菱電機株式会社 半導体装置
JP4326835B2 (ja) 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
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JP2005064472A (ja) 2003-07-25 2005-03-10 Fuji Electric Device Technology Co Ltd 半導体装置
JP4654574B2 (ja) * 2003-10-20 2011-03-23 トヨタ自動車株式会社 半導体装置
JP4667756B2 (ja) 2004-03-03 2011-04-13 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
KR100756306B1 (ko) 2007-09-06
DE102006029499B4 (de) 2017-01-26
KR20070009392A (ko) 2007-01-18
DE102006029499A1 (de) 2007-01-18
US20090256234A1 (en) 2009-10-15
CN100550381C (zh) 2009-10-14
JP4863665B2 (ja) 2012-01-25
US7582946B2 (en) 2009-09-01
JP2007027358A (ja) 2007-02-01
TWI298534B (en) 2008-07-01
US7763950B2 (en) 2010-07-27
CN1897278A (zh) 2007-01-17
US20070013022A1 (en) 2007-01-18

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