TW200529408A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method Download PDF

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Publication number
TW200529408A
TW200529408A TW93133221A TW93133221A TW200529408A TW 200529408 A TW200529408 A TW 200529408A TW 93133221 A TW93133221 A TW 93133221A TW 93133221 A TW93133221 A TW 93133221A TW 200529408 A TW200529408 A TW 200529408A
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TW
Taiwan
Prior art keywords
semiconductor wafer
semiconductor
electrodes
leads
lead
Prior art date
Application number
TW93133221A
Other languages
English (en)
Chinese (zh)
Inventor
Kouichi Kanemoto
Kazunari Suzuki
Toshihiro Shiotsuki
Hideyuki Suga
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200529408A publication Critical patent/TW200529408A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW93133221A 2003-11-20 2004-11-01 Semiconductor device and its manufacturing method TW200529408A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003390029A JP2005150647A (ja) 2003-11-20 2003-11-20 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW200529408A true TW200529408A (en) 2005-09-01

Family

ID=34587426

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93133221A TW200529408A (en) 2003-11-20 2004-11-01 Semiconductor device and its manufacturing method

Country Status (4)

Country Link
US (1) US20050110127A1 (enExample)
JP (1) JP2005150647A (enExample)
KR (1) KR20050049346A (enExample)
TW (1) TW200529408A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112447691A (zh) * 2019-08-28 2021-03-05 富士电机株式会社 半导体装置及半导体装置的制造方法

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JP4602223B2 (ja) * 2005-10-24 2010-12-22 株式会社東芝 半導体装置とそれを用いた半導体パッケージ
KR100844630B1 (ko) * 2006-03-29 2008-07-07 산요덴키가부시키가이샤 반도체 장치
US9202776B2 (en) * 2006-06-01 2015-12-01 Stats Chippac Ltd. Stackable multi-chip package system
TWI327365B (en) * 2007-01-19 2010-07-11 Chipmos Technologies Inc Zigzag-stacked chip package structure
JP4751351B2 (ja) * 2007-02-20 2011-08-17 株式会社東芝 半導体装置とそれを用いた半導体モジュール
JP2008270302A (ja) * 2007-04-16 2008-11-06 Sanyo Electric Co Ltd 半導体装置
KR100881198B1 (ko) * 2007-06-20 2009-02-05 삼성전자주식회사 반도체 패키지 및 이를 실장한 반도체 패키지 모듈
KR101557273B1 (ko) 2009-03-17 2015-10-05 삼성전자주식회사 반도체 패키지
KR101563630B1 (ko) * 2009-09-17 2015-10-28 에스케이하이닉스 주식회사 반도체 패키지
JP2014036179A (ja) * 2012-08-10 2014-02-24 Ps4 Luxco S A R L 半導体装置
JP6110769B2 (ja) * 2013-09-25 2017-04-05 ルネサスエレクトロニクス株式会社 半導体装置
JP5856274B2 (ja) * 2014-11-06 2016-02-09 ルネサスエレクトロニクス株式会社 半導体装置、半導体装置の製造方法、及びリードフレーム
JP2018049942A (ja) * 2016-09-21 2018-03-29 アイシン精機株式会社 変位センサ
US10373895B2 (en) * 2016-12-12 2019-08-06 Infineon Technologies Austria Ag Semiconductor device having die pads with exposed surfaces
US10714418B2 (en) * 2018-03-26 2020-07-14 Texas Instruments Incorporated Electronic device having inverted lead pins
JP7192688B2 (ja) 2019-07-16 2022-12-20 Tdk株式会社 電子部品パッケージ
US11469163B2 (en) * 2019-08-02 2022-10-11 Semiconductor Components Industries, Llc Low stress asymmetric dual side module

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US5615475A (en) * 1995-01-30 1997-04-01 Staktek Corporation Method of manufacturing an integrated package having a pair of die on a common lead frame
US6476474B1 (en) * 2000-10-10 2002-11-05 Siliconware Precision Industries Co., Ltd. Dual-die package structure and method for fabricating the same
JP2002231882A (ja) * 2001-02-06 2002-08-16 Mitsubishi Electric Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112447691A (zh) * 2019-08-28 2021-03-05 富士电机株式会社 半导体装置及半导体装置的制造方法

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JP2005150647A (ja) 2005-06-09
US20050110127A1 (en) 2005-05-26
KR20050049346A (ko) 2005-05-25

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