CN103531561A - 芯片封装及其制造方法 - Google Patents

芯片封装及其制造方法 Download PDF

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Publication number
CN103531561A
CN103531561A CN201310280959.0A CN201310280959A CN103531561A CN 103531561 A CN103531561 A CN 103531561A CN 201310280959 A CN201310280959 A CN 201310280959A CN 103531561 A CN103531561 A CN 103531561A
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chip
attached
line
group
lead finger
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T.J.D.索勒
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明涉及芯片封装。实施例提供了芯片封装，该芯片封装可以包括引线框架，其具有管芯焊盘和多个引线指；第一芯片，连到管芯焊盘，该第一芯片经由第一组线接合被接合至一个或多个引线指；第二芯片，经由倒装芯片被接合至一个或多个引线指；和散热块，被附接至该第二芯片。

Description

芯片封装及其制造方法
技术领域
实施例一般地涉及芯片封装和制造芯片封装的方法。
背景技术
典型芯片封装包括芯片，该芯片附接至引线框架的管芯焊盘，并且被线接合至引线框架的相应的引线指（lead finger）用于与外部电路的电连接。用模塑化合物（molding compound）灌封管芯焊盘、芯片和线接合，以形成芯片封装，该芯片封装为芯片提供了保护，并且经由从封装延伸的引线指来提供到芯片的电连接。
这种芯片封装可以提供由单个芯片提供的有限功能。对于需要更复杂功能的想要的应用，可能需要几个芯片封装来提供更多功能。可替换地，需要并入超过一个芯片但是具有较大封装尺寸的芯片封装来提供想要的应用所需要的更多功能。
想要的是，小型化芯片封装，而同时在芯片封装中提供更多功能。
发明内容
实施例提供了芯片封装。该芯片封装可以包括引线框架，其具有管芯焊盘和多个引线指；第一芯片，其附接至管芯焊盘，而第一芯片经由第一组线接合来被接合至一个或多个引线指；第二芯片，其经由倒装芯片来被接合至一个或多个引线指；和散热块（heat slug），其被附接至第二芯片。
附图说明
在图中，相同的参考符号一般遍及不同视图指的是相同的部分。图不必要按比例绘制，而是一般强调图示本发明的原理。在下面的描述中，参考下列图描述各种实施例，在其中：
图1示出根据实施例的芯片封装。
图2示出图示了形成根据实施例的芯片封装的方法的流程图。
图3示出根据另一个实施例的芯片封装。
图4示出根据实施例的图3的芯片封装的顶视图。
图5示出图示了形成根据另一个实施例的芯片封装的方法的流程图。
图6示出根据另一实施例的芯片封装。
图7示出根据实施例的图6的芯片封装的顶视图。
图8示出图示了形成根据另一实施例的芯片封装的方法的流程图。
具体实施方式
各种实施例提供了芯片封装，该芯片封装能够实现在具有给定的封装面积或者体积的单个紧凑封装中的更多器件功能性。
在芯片封装的上下文中在下面所述的实施例对各自的形成芯片封装的方法是类似有效的，并且反之亦然。
在各种实施例中，多个芯片中的至少一个可以包括晶圆衬底的至少一部分。可替换地，多个芯片中的每个都可以包括晶圆衬底的至少一部分。多个芯片中的至少一个可以包括在晶圆衬底内形成的一个或多个电子电路，例如，其可以已经通过较早的前端工艺被形成。多个芯片中的至少一个可以包括功率半导体芯片中的至少一部分，其中该功率半导体芯片可以包括来自分组的至少一个功率半导体器件，该分组包括：功率晶体管、功率MOS晶体管、功率双极晶体管、功率场效应晶体管、功率绝缘栅双极晶体管、晶闸管、MOS晶闸管、可控硅整流器（silicon controlled rectifier）、功率肖特基二极管、碳化硅二极管、氮化镓器件。
可以理解的是，多个芯片可能不限于功率半导体器件，但是也可以包括逻辑器件（例如专用集成电路ASIC）或者可编程处理器（诸如例如可编程微处理器、例如驱动器、例如控制器、例如传感器）、和/或存储器件（诸如包括易失和/或非易失性存储器件的随机存取存储器件。
一个实施例被引向芯片封装。该芯片封装可以包括引线框架，其具有管芯焊盘和多个引线指；第一芯片，其附接至管芯焊盘，而第一芯片经由第一组线接合被接合至一个或多个引线指；第二芯片，其经由倒装芯片被接合至一个或多个引线指；和散热块，被附接至第二芯片。
在各种实施例中，引线框架是将芯片在其上安装并封装的衬底，并且引线框架可以包括金属，例如铜或者其它和合适的金属，诸如铜合金或铁合金，从而为芯片提供了电连接和机械支撑。
在实施例中，引线框架可以包括多个管芯焊盘和相应的引线指，其中管芯焊盘被彼此间隔开。在封装工艺期间，可以在多个管芯焊盘上形成多个芯片封装，并且该多个芯片封装可以最终被分离，以形成单独的芯片封装。为了简单起见，关于在引线框架的管芯焊盘上形成的芯片封装进行下列描述，但是应当理解的是，根据各种实施例可以在引线框架的多个管芯焊盘上类似地形成多个芯片封装。
在实施例中，第二芯片的有效表面可以面向第一芯片的有效表面。
在实施例中，被附接至第二芯片的散热块能够实现从芯片封装的顶部的散热，从而为芯片封装提供良好的冷却性能。由此形成的芯片封装可以被称为双冷芯片（DCC，dual cool chip）封装。
在实施例中，该芯片封装可以进一步包括被附接在第一芯片上的第三芯片，其中第三芯片经由第二组线接合被接合至引线框架的一个或多个引线指。第三芯片的有效表面面向第二芯片的有效表面。
在另一实施例中，芯片封装可以进一步包括被附接在管芯焊盘上的第四芯片。第四芯片可以被布置在紧接着第一芯片，并且可以与第一芯片间隔开。在实施例中，第四芯片经由第三组线接合被接合至一个或多个引线指。
在实施例中，芯片封装可以进一步包括被附接在第四芯片上的夹片。根据实施例，夹片被布置，使得夹片的一端被附接在第四芯片上，并且夹片的另一端被附接在一个或多个引线指上。在实施例中，夹片可以具有弯钩形状。在其它实施例中，夹片可以具有其它合适的形状，以在第四芯片和引线框架的相应的引线指之间适应。
夹片可以包括针对第四芯片的多个芯片引线的多个接触点，以致提供至第四芯片的多个芯片引线的连接。
在实施例中，可以例如在胶合工艺中、管芯附接工艺或者晶圆背涂工艺中通过使用非导电管芯附接材料来将夹片附接在第四芯片上。在另一个实施例中，可以在管芯附接工艺或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）来将夹片附接在第四芯片上。在另一实施例中，可以在软焊接工艺中通过使用焊接线来将夹片附接至第四芯片。在其它实施例中，可以在其它合适的工艺中通过使用其它合适的粘合剂来附接夹片。
根据实施例，该芯片封装可以进一步包括灌封层，其灌封管芯焊盘、第一芯片、第二芯片、和第一组线接合。在实施例中，灌封层也可以灌封第三芯片、第四芯片、第二组线接合和第三组线接合，以致形成整个芯片封装。
根据实施例，灌封层可以包括灌封材料。灌封材料可以包括来自下列材料组的至少一种材料，该组包括：填充或者未填充的环氧树脂、预浸渍复合纤维、增强纤维、叠层、模塑材料、模塑化合物、热固材料、热塑材料、填料颗粒、纤维增强叠层、纤维增加聚合物叠层、具有填料颗粒的纤维增强聚合物叠层。
应当理解的是，芯片封装可以包括多于如在上面实施例中所述的四个芯片。例如，可以存在更多一些的芯片，其被附接在管芯焊盘上并且被彼此间隔开。在另一个例子中，可能存在更多一些的芯片，其被附接在芯片的顶部，而芯片被附接在管芯焊盘上。在另一例子中，可以存在更多一些的倒装芯片，其经由倒装芯片工艺来被接合至引线指并且被彼此间隔开。
另一个实施例被引向制造芯片封装的方法。该方法可以包括：将第一芯片附接在引线框架的管芯焊盘上，该引线框架包括管芯焊盘和多个引线指；形成第一组线接合，其用于将第一芯片接合至一个或多个引线指；经由倒装芯片来将第二芯片接合至一个或多个引线指；和将散热块附接在第二芯片上。
在实施例中，可以通过使用可印膏、胶或者管芯附接膜经由管芯接合来将第一芯片附接在管芯焊盘上。在另一个实施例中，可以通过使用扩散焊接来将第一芯片附接在管芯焊盘上。在实施例中，例如在胶合工艺、管芯附接工艺或者晶圆背涂工艺中可以通过使用非导电管芯附接材料来将第一芯片附接至管芯焊盘。在另一个实施例中，可以在管芯附接工艺或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）将第一芯片附接至管芯焊盘。在另一实施例中，可以在软焊接工艺中通过使用焊接线来将第一芯片附接至管芯焊盘。在其它实施例中，其它合适的管芯附接材料和工艺可以用来将第一芯片附接在管芯焊盘上。
在实施例中，例如通过使用球上压合线（ball stitch on ball）（BSOB）接合来在线接合工艺中形成第一组线接合，使得第一芯片被线接合至一个或多个引线指。在另一个实施例中，形成第一组线接合包括在引线指上形成一个或多个安全接合，使得第一芯片可以经由第一组线接合来与引线指上的安全接合线接合。在其它实施例中，可以通过使用其它合适的线接合技术来形成第一组线接合，例如通过使用通过热超声接合或者激光接合的焊接接合、铝线接合、金线接合、涂钯金线接合、银线接合、或者铜线接合。
根据实施例，第二芯片被倒转过来，使得其有效表面向下面向第一芯片的有效表面，并且在倒装芯片工艺中被接合至相应的引线指。在实施例中，第二芯片可以被接合在引线指上的BSOB或者安全接合上。
在实施例中，通过使用管芯附接膜来将散热块附接至第二芯片。在另一个实施例中，通过使用扩散焊接来将散热块附接至第二芯片。在各种实施例中，可以在胶合工艺或者管芯附接工艺或者其它合适的工艺中通过使用非导电管芯附接材料、导电管芯附接材料（诸如焊接膏、胶或者环氧树脂）来将散热块附接至第二芯片。
在实施例中，该方法可以进一步包括在经由倒装芯片工艺接合第二芯片之前，将第三芯片附接在第一芯片上。在实施例中，可以形成第二组线接合，以将第三芯片接合至引线框架的一个或多个引线指。第三芯片的有效表面可以面向其后接合的第二芯片的有效表面。
根据实施例，可以通过使用可印膏、胶或者管芯附接膜经由管芯来附接第三芯片。在另一个实施例中，可以通过使用扩散焊接来附接第三芯片。在实施例中，例如在胶合/环氧树脂工艺、管芯附接工艺或者晶圆背涂工艺中，可以通过使用非导电管芯附接材料来将第三芯片附接在第一个芯片上。在另一个实施例中，可以在管芯附接工艺中或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）来将第三芯片附接至第一芯片。在其它实施例中，其它合适的管芯附接材料和工艺可以用于附接第三芯片。
在另一实施例中，该方法可以进一步包括将第四芯片附接在管芯焊盘上。第四芯片可以被布置在紧接着第一芯片，并且该第四芯片可以与第一芯片间隔开。在将第三芯片附接在第一芯片上之前，可以将第四芯片附接在管芯焊盘上。在实施例中，可以形成第三组线接合，以将第四芯片接合至一个或多个引线指。
根据实施例，可以通过使用可印膏、胶或者管芯附接膜经由管芯接合来附接第四芯片。在另一个实施例中，可以通过使用扩散焊接来附接第三芯片和第四芯片。在实施例中，例如在胶合工艺、管芯附接工艺或者晶圆背涂工艺中，可以通过使用非导电管芯附接材料来将第四芯片附接至管芯焊盘。在另一个实施例中，可以在管芯附接工艺或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）来将第四芯片附接至管芯焊盘。在另一实施例中，可以在软焊接工艺中通过使用焊接线来将第四芯片附接至管芯焊盘。在其它实施例中，其它合适的管芯附接材料和工艺可以用来附接第三芯片和第四芯片。
在实施例中，形成第二组线接合和第三组线接合可以使用例如球上压合线（BSOB）接合的线接合工艺，以致将第三芯片和第四芯片线接合至各自的引线指。在另一个实施例中，形成第二组线接合和第三组线接合包括在引线指上形成一个或多个安全接合（security bonds），使得第三芯片和第四芯片可以经由第二组线接合和第三组线接合与引线指上的安全接合线接合。在其它实施例中，可以使用其它合适的线接合技术，以形成第二组线接合和第三组线接合，例如通过使用热超声接合或者激光接合中的焊接接合、铝线接合、金线接合、涂钯金线接合、银线接合、或者铜线接合。
根据实施例，该方法可以进一步包括例如通过使用焊接膏或者其它合适的粘合剂来将夹片附接在第四芯片上。可以布置夹片，使得夹片的一端被附接在第四芯片上，并且夹片的另一端被附接在一个或多个引线指上。该夹片可以具有弯钩形状或者其它合适的性质，以在第四芯片和引线框架的相应的引线指之间适应。
根据实施例，该方法可以进一步包括沉积灌封层，该灌封层灌封管芯焊盘、第一芯片、第二芯片、和第一组线接合。在实施例中，可以形成灌封层，以还灌封第三芯片、第四芯片、第二组线接合和第三组线接合，以致形成整个芯片封装。
应当理解的是，该方法可以附接多于如在上面实施例中所述的四个芯片。例如，根据各种实施例，该方法可以包括附接被附接在管芯焊盘上的更多一些的芯片、将更多一些的芯片附接在被附接在管芯焊盘上的芯片的顶部上、和/或经由倒装芯片工艺来将更多一些的倒装芯片接合至引线指。
另一实施例提供了芯片封装。芯片封装可以包括芯片载体，该芯片载体包括芯片接触结构；第一芯片，其经由线接合被接合至芯片接触结构；和第二芯片，其经由倒装芯片接触来被接合至芯片接触结构。
在实施例中，芯片封装可以进一步包括被附接至第二芯片的散热结构。
另一实施例提供芯片封装。芯片封装可以包括芯片载体，该芯片载体包括芯片接触结构；第一芯片，其经由第一芯片接合技术结构来被接合至芯片接触结构；和第二芯片，其经由第二芯片接合技术结构来被接合至芯片接触结构。第二芯片接合技术结构与第一芯片接合技术结构不同。
在实施例中，芯片封装可以进一步包括被附接至第二芯片的散热结构。
在实施例中，第一芯片接合技术结构可以包括多个接合线；并且第二芯片接合技术结构可以包括倒装芯片结构。
图1示出根据实施例的芯片封装。
芯片封装包括一个或多个芯片可以在其上安装并封装的引线框架。引线框架可以包括金属，例如铜或其它合适的材料，诸如铜合金或者铁合金，所述金属为芯片提供电连接和机械支撑。铜合金的例子可以包括：包括了Cu、Cr、Sn、Zn的合金；或者包括了Cu、Ni、Si、Zn、Ag的合金。如图1中所示，引线框架可以包括管芯焊盘101和多个引线指103。
芯片封装可以包括被附接至管芯焊盘101的第一芯片111，其中该第一芯片111经由第一组线接合113被接合至引线指103。
芯片封装可以进一步包括第二芯片121，该第二芯片121为被接合至相应的引线指103的倒装芯片（flip chip）。第二芯片121的有效表面可以面向第一芯片111的有效表面。
一般为散热结构的散热块131可以被附接至第二芯片121，以致能够实现从芯片封装的顶部的散热。在另一个实施例中，散热块131可以是可选的，使得芯片封装只包括被附接在引线框架的管芯焊盘101上的第二芯片121和第一芯片111。
根据实施例，可以形成灌封层161，以灌封管芯焊盘101、第一芯片111、第二芯片121、和第一组线接合113。
根据实施例，该灌封层161可以包括灌封材料。该灌封材料可以包括来自下列材料组的至少一种材料，该组包括：填充或者未填充的环氧树脂、预浸渍复合纤维、增强纤维、叠层、模塑材料、模塑化合物、热固材料、热塑材料、填料颗粒、纤维增强叠层、纤维增强聚合物叠层、具有填料颗粒的纤维增强聚合物叠层。
应当理解的是，芯片封装可以包括超过如上面图1的实施例中所述的两个芯片，并且下面将描述包括更多芯片的其它实施例。
图2示出图示了制造根据实施例的芯片封装（例如，图1的芯片封装）的方法的流程图。
在201，第一芯片被附接至引线框架的管芯焊盘，其中该引线框架包括管芯焊盘和多个引线指。在实施例中，可以通过使用可印膏（printable paste）、胶或者管芯附接膜经由管芯接合将第一芯片附接在管芯焊盘上。在另一个实施例中，可以通过使用扩散焊接来将第一芯片附接在管芯焊盘上。在实施例中，例如在胶合工艺、管芯附接工艺或者晶圆背涂工艺中，可以通过使用非导电管芯附接材料来将第一芯片附接至管芯焊盘。在另一个实施例中，可以在管芯附接工艺或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）来将第一芯片附接至管芯焊盘。在另外的实施例中，可以在软焊接工艺中通过使用焊接线来将第一芯片附接至管芯焊盘。在其它实施例中，其它合适的管芯附接材料和工艺可以用来将第一芯片附接在管芯焊盘上。
在203，形成第一组线接合，用于将第一芯片接合至一个或多个引线指。在实施例中，例如通过使用球上压合线（BSOB，ball stitch on ball）接合，在线接合工艺中形成第一组线接合。在另一个实施例中，形成第一组线接合可以包括在引线指上形成一个或多个安全接合，使得第一芯片可以经由第一组线接合与引线指上的安全接合线接合。在其它实施例中，可以通过使用其它合适的线接合技术来形成第一组线接合，例如通过使用通过热超声接合或者激光接合的焊接接合、铝线接合、金线接合、涂钯金线接合、银线接合、或者铜线接合。
在205，第二芯片经由倒装芯片工艺被接合至一个或多个引线指。在实施例中，第二芯片的有效表面可以面向第一芯片的有效表面。在实施例中，第二芯片可以被接合在引线指上的BSOB或安全接合上。
在207，散热块被附接至第二芯片。在各种实施例中，可以通过使用管芯附接膜或者扩散焊接来将散热块附接在第二芯片上。
图3示出根据另一个实施例的芯片封装。
如图3中所示，芯片封装可以包括引线框架，该引线框架包括管芯焊盘301和多个引线指303，所述多个引线指303用于为安装在其上的芯片提供机械支撑和电连接。
芯片封装可以包括被附接在管芯焊盘301上的第一芯片311，其中该第一芯片311经由第一组线接合313被接合至引线指303。
在实施例中，该芯片封装可以进一步包括被附接在第一芯片311上的第二芯片321，其中第二芯片321经由第二组线接合323被接合至引线框架的一个或多个引线指303。
在另外的实施例中，该芯片封装可以进一步包括第三芯片331，该第三芯片331是被接合至相应的引线指303的倒装芯片。由于第三芯片331被倒转过来，所以第三芯片331的有效表面面向第二芯片321的有效表面。
散热块341可以被附接在第三芯片331上，从而能够实现从芯片封装的顶部的散热。
根据实施例，可以形成灌封层361，以灌封管芯焊盘301、第一芯片311、第二芯片321、第三芯片331、第一组线接合313和第二组线接合323。
图4中示出图3的芯片封装的顶视图，其示出了被附接在管芯焊盘301上的第一芯片311、被附接在第一芯片311上的第二芯片321、在第二芯片321的顶部接合的第三芯片331、和从各自的芯片连接至各自的引线指303的各自的线接合。
图5示出图示了制造根据另一个实施例的芯片封装（例如，图3和图4的芯片封装）的方法的流程图。
在501，第一芯片被附接至引线框架的管芯焊盘，其中该引线框架包括管芯焊盘和多个引线指。在实施例中，可以通过使用可印膏、胶或者管芯附接膜经由管芯附接来将第一芯片附接在管芯焊盘上。在另一个实施例中，可以通过使用扩散焊接来将第一芯片附接在管芯焊盘上。在实施例中，例如在胶合工艺、管芯附接工艺或者晶圆背涂工艺中，可以通过使用非导电管芯附接材料来将第一芯片附接至管芯焊盘。在另一个实施例中，可以在管芯附接工艺或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）来将第一芯片附接至管芯焊盘。在另一实施例中，可以在软焊接工艺中通过使用焊接线来将第一芯片附接至管芯焊盘。在其它实施例中，其它合适的管芯附接材料和工艺可以用来将第一芯片附接在管芯焊盘上。
在503，第二芯片被附接在第一芯片上。可以通过使用可印膏、胶或者管芯附接膜经由管芯接合附接第二芯片，或者可以通过使用扩散焊接来附接第二芯片。在实施例中，例如在胶合/环氧树脂工艺、管芯附接工艺或者晶圆背涂工艺中，可以通过使用非导电管芯附接材料来将第二芯片附接在第一个芯片上。在另一个实施例中，可以在管芯附接工艺或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）来将第二芯片附接至第一芯片。也可是使用其它合适的管芯附接材料和工艺来附接第二芯片。
在505，形成第一组线接合，用于将第一芯片接合至一个或多个引线指。
在507，形成第二组线接合，用于将第二芯片接合至一个或多个引线指。
在实施例中，例如可以通过使用球上压合线（BSOB）接合，来在线接合工艺中形成第一组线接合和第二组线接合。在另一个实施例中，形成第一组线接合和第二组线接合可以包括在引线指上形成一个或多个安全接合，使得第一芯片和第二芯片可以经由第一组线接合和第二组线接合来与各自的引线指上的各自的安全线接合接合。其它合适的线接合技术也可以用来形成第一组线接合和第二组线接合，例如通过使用通过热超声接合或者激光接合的焊接接合、铝线接合、金线接合、涂钯金线接合、银线接合、或者铜线接合。
在509，第三芯片经由倒装芯片工艺被接合至一个或多个引线指。在实施例中，第三芯片的有效表面可以面向第二芯片的有效表面。在各种实施例中，第三芯片可以被接合在引线指上的BSOB或者安全接合上。
在511，散热块被附接至第三芯片。在各种实施例中，可以通过使用管芯附接膜或者扩散焊接来将散热块附接在第三芯片上。
在513，根据实施例，可以沉积灌封层，以灌封管芯焊盘、第一芯片、第二芯片、第三芯片、第一组线接合和第二组线接合。在实施例中，灌封层可以包括灌封材料。该灌封材料可以包括来自下列材料组的至少一种材料，该组包括：填充或者未填充的环氧树脂、预浸渍复合纤维、增强纤维、叠层、模塑材料、模塑化合物、热固材料、热塑材料、填料颗粒、纤维增强叠层、纤维增加聚合物叠层、具有填料颗粒的纤维增强聚合物叠层。
在实施例中，可以通过圆顶封装（Glob Top）来沉积灌封层，其中灌封材料被沉积在管芯焊盘、第一芯片、第二芯片、第三芯片、第一组线接合和第二组线接合上，并且然后被固化。在另一个实施例中，该灌封层可以通过坝填充封装（Dam-and-Fill）来沉积，所述坝填充封装利用围绕引线框架外围的坝体。在其它实施例中，该灌封层可以通过压缩模塑、转移模塑、注入模塑、或者其它合适的工艺来沉积。
在515，可以例如通过使用涂工艺或者镀工艺来实行引线精加工（lead finish）。
在517，可以实行修整（trim）、形成和切单片（singulation）工艺，以致将单独芯片封装从引线框架分离。切单片工艺可以包括一个或多个借助于激光或者借助于破碎的工艺：锯切、刻蚀、切单片。
图6示出根据另外的实施例的芯片封装。
如图6中所示，芯片封装可以包括引线框架，该引线框架包括管芯焊盘601和多个引线指603，所述多个引线指603用于为安装在其上的芯片提供机械支撑和电连接。
芯片封装可以包括被附接在管芯焊盘601上的第一芯片611，其中该第一芯片611经由第一组线接合615被接合至引线指603。
该芯片封装可以进一步包括被附接在管芯焊盘601上的第二芯片613，其中该第二芯片613经由第二组线接合（图6中未示出）被接合至引线指603。应当注意的是，第一芯片611和第二芯片613在图6的横截面视图中被示为相同结构，但是在图7中的顶视图中被示为被彼此间隔开的两个分离的芯片。图7的顶视图中还示出了用于将第二芯片613接合至引线指603的第二组线接合。
在实施例中，该芯片封装可以进一步包括被附接在第一芯片611上的第三芯片621，其中该第三芯片621经由第三组线接合623被接合至引线框的一个或多个引线指303。
在实施例中，可以通过使用焊接膏或者其它合适的粘合剂来将夹片651附接在第二芯片613上。根据实施例，这样布置夹片651，使得夹片651的一端被附接在第二芯片613上，并且夹片651的另一端被附接在一个或多个引线指603上。在图6中所示的实施例中，该夹片651可以具有弯钩形状。在其它实施例中，该夹片可以具有其它合适的形状，以在第二芯片613和引线框架的相应的引线指之间适应。该夹片651可以包括针对第二芯片613的多个芯片引线的多个接触点，以致提供至第二芯片613的多个芯片引线的连接。
在另一实施例中，该芯片封装可以进一步包括第四芯片631，该第四芯片631是被接合至相应的引线指603的倒装芯片。由于第四芯片631被倒转过来，所以第四芯片631的有效表面面向第三芯片621的有效表面。
散热块641可以被附接在第四芯片631上，从而能够实现从芯片封装的顶部的散热。
根据另一实施例，可以形成灌封层661，以灌封管芯焊盘601、第一芯片611、第二芯片613、第三芯片621、第四芯片631、第一组线接合315、第二组线接合和第三组线接合623。
图7中示出图6的芯片封装的顶视图，图7示出被附接在管芯焊盘601上的第一芯片611和第二芯片613、被附接在第一芯片611上的第三芯片621、被附接在第二芯片613上的夹片651、在第三芯片621顶部上接合的第四芯片631、和从各自的芯片连接至各自的引线指603的各自的线接合。
图8示出图示了制造根据另一个实施例的芯片封装（例如，图6和图7的芯片封装）的方法的流程图。在801，第一芯片被附接在引线框架的管芯焊盘上，其中该引线框架包括管芯焊盘和多个引线指。
在803，第二芯片被附接在管芯焊盘上，其中第二芯片可以与第一芯片间隔开。
在实施例中，可以通过使用可印膏、胶或者管芯附接膜经由管芯接合来将第一芯片和第二芯片附接在管芯焊盘上。在另一个实施例中，可以通过使用扩散焊接来将第一芯片和第二芯片附接在管芯焊盘上。在实施例中，例如在胶合工艺、管芯附接工艺或者晶圆背涂工艺中，可以通过使用非导电管芯附接材料来将第一芯片和第二芯片附接至管芯焊盘。在另一个实施例中，可以在管芯附接工艺或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）来将第一芯片和第二芯片附接至管芯焊盘。在另一实施例中，可以在软焊接工艺中通过使用焊接线来将第一芯片和第二芯片附接至管芯焊盘。在其它实施例中，其它合适的管芯附接材料和工艺也可以用来将第一芯片和第二芯片附接在管芯焊盘上。可以同时或顺序地执行801、803中的第一芯片和第二芯片附接。
在805，第三芯片被附接在第一芯片上。可以通过使用可印膏、胶或者管芯附接膜经由管芯接合来附接第三芯片，或者可以通过使用扩散焊接或者通过使用其它合适的管芯附接材料和工艺来附接第三芯片。在实施例中，例如在胶合/环氧树脂工艺、管芯附接工艺或者晶圆背涂工艺中，可以通过使用非导电管芯附接材料来将第三芯片附接在第一芯片上。在另一个实施例中，可以在管芯附接工艺或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）来将第三芯片附接至第一芯片。
在807，可以例如通过使用焊接膏或者其它合适的粘合剂来将夹片附接在第二芯片上。在实施例中，可以例如在胶合工艺、管芯附接工艺或者晶圆背涂工艺中通过使用非导电管芯附接材料来将夹片附接在第二芯片上。在另一个实施例中，可以在管芯附接工艺或者晶圆背涂工艺中通过使用导电管芯附接材料（诸如，焊接膏、胶或者环氧树脂）来将夹片附接至第二芯片。在另一实施例中，可以在软焊接工艺中通过使用焊接线来将该夹片附接至第二芯片。在其它实施例中，可以在其它合适的工艺中通过使用其它合适的粘合剂来附接夹片。
可以这样布置夹片，使得夹片的一端被附接在第二芯片上，而夹片的另一端被附接在一个或多个引线指上。该夹片可以具有弯钩形状或者其它适合的形状，以在第二芯片和引线框架的相应的引线指之间适应。
在809，形成第一组线接合，用于将第一芯片接合至一个或多个引线指。
在811，形成第二组线接合，用于将第二芯片接合至一个或多个引线指。
在813，形成第三组线接合，用于将第三芯片接合至一个或多个引线指。
在实施例中，可以例如通过使用球上压合线（BSOB）接合，来在线接合工艺中形成第一组线接合、第二组线接合和第三组线接合。在另一个实施例中，形成第一组线接合、第二组线接合和第三组线接合可以包括在引线指上形成一个或多个安全接合，使得第一芯片、第二芯片和第三芯片可以分别经由第一组线接合、第二组线接合和第三组线接合与各自的引线指上的各自的安全接合线接合。在其它实施例中，可以通过使用其它合适的线接合技术来形成第一组线接合、第二组线接合和第三组线接合，例如通过使用通过热超声接合或者激光接合的焊接接合、铝线接合、金线接合、涂钯金线接合、银线接合、或者铜线接合。
可以同时或者顺序地实行在线接合工艺809、811、813中的第一组线接合、第二组线接合和第三组线接合的形成。
在815，第四芯片经由倒装芯片工艺被接合至一个或多个引线指。在实施例中，第四芯片的有效表面可以面向第三芯片的有效表面。在各种实施例中，第四芯片可以被接合在引线指上的BSOB或者安全接合上。
在817，散热块被附接在第四芯片上。在各种实施例中，可以通过使用管芯附接膜或者扩散焊接来将散热块附接在第四芯片上。
在819，可以沉积灌封层，以灌封管芯焊盘、第一芯片、第二芯片、第三芯片、第四芯片、第一组线接合、第二组线接合和第三组线接合。
在821，可以例如通过使用涂工艺或者镀工艺来实行引线精加工。
在823，可以实行修整、形成和切单片工艺，以致将单独芯片封装从引线框架分离。
各种实施例提供了在微型IC封装中具有多功能性的单个的和紧凑的芯片封装。各种实施例的多功能芯片封装也提供了更高的电性能和良好的热冷却性能。
虽然已经参考具体的实施例特别地示出并描述本发明，但是本领域技术人员应该理解的是，可以在那里进行各种形式和细节的改变，而不离开如由所附权利要求所限定的本发明的精神和范围。因此，本发明的范围由所附权利要求指示，并且因此意图涵盖在权利要求的等价物的意义和范围内的全部改变。

Claims (20)

1.一种芯片封装，其包括：
引线框架，其包括管芯焊盘和多个引线指；
第一芯片，其被附接至管芯焊盘，而第一芯片经由第一组线接合被接合至一个或多个引线指；
第二芯片，其经由倒装芯片被接合至一个或多个引线指；以及
散热块，其被附接至第二芯片。
2.如权利要求1所述的芯片封装，其中，
第二芯片的有效表面面向第一芯片的有效表面。
3.如权利要求1所述的芯片封装，进一步包括：
第三芯片，其被附接在第一芯片上，而第三芯片经由第二组线接合被接合至一个或多个引线指。
4.如权利要求3所述的芯片封装，其中，
第三芯片的有效表面面向第二芯片的有效表面。
5.如权利要求1所述的芯片封装，进一步包括：
第四芯片，其被附接在管芯焊盘上，而第四芯片与第一芯片间隔开。
6.如权利要求5所述的芯片封装，其中，
第四芯片经由第三组线接合被接合至一个或多个引线指。
7.如权利要求5所述的芯片封装，进一步包括：
夹片，其具有被附接在第四芯片上的一端，并且具有被附接在一个或多个引线指上的另一端。
8.如权利要求1所述的芯片封装，进一步包括：
灌封层，其灌封管芯焊盘、第一芯片、第二芯片、和第一组线接合。
9.一种制造芯片封装的方法，该方法包括：
将第一芯片附接至引线框架的管芯焊盘，而引线框架包括管芯焊盘和多个引线指；
形成第一组线接合，所述第一组线接合用于将第一芯片接合至一个或多个引线指；
经由倒装芯片来将第二芯片接合至一个或多个引线指；以及
将散热块附接至第二芯片。
10.如权利要求9所述的方法，进一步包括：
在附接第二芯片之前，将第三芯片附接在第一芯片上。
11.如权利要求10所述的方法，进一步包括：
形成第二组线接合，所述第二组线接合用于将第三芯片接合至一个或多个引线指。
12.如权利要求9所述的方法，进一步包括：
附接被附接在管芯焊盘上的第四芯片，使得第四芯片与第一芯片间隔开。
13.如权利要求12所述的方法，进一步包括
形成第三组线接合，所述第三组线接合用于将第四芯片接合至一个或多个引线指。
14.如权利要求12所述的方法，进一步包括：
将夹片附接在第四芯片上，使得夹片的一端被附接在第四芯片上，并且夹片的另一端被附接在一个或多个引线指上。
15.如权利要求9所述的方法，进一步包括：
沉积灌封层，使得灌封层灌封管芯焊盘、第一芯片、第二芯片、和第一组线接合。
16.一种芯片封装，其包括：
芯片载体，其包括芯片接触结构；
第一芯片，其经由线接合来被接合至芯片接触结构；
第二芯片，其经由倒装芯片接触来被接合至芯片接触结构。
17.如权利要求16所述的芯片封装，进一步包括：
散热结构，其被附接至第二芯片。
18.一种芯片封装，其包括：
芯片载体，其包括芯片接触结构；
第一芯片，其经由第一芯片接合技术结构来被接合至芯片接触结构；
第二芯片，其经由第二芯片接合技术结构来被接合至芯片接触结构，其中第二芯片接合技术结构不同于第一芯片接合技术结构。
19.如权利要求18所述的芯片封装，进一步包括：
散热结构，其被附接至第二芯片。
20.如权利要求18所述的芯片封装，其中，
第一芯片接合技术结构包括多个线接合；并且
第二芯片接合技术结构包括倒装芯片结构。
CN201310280959.0A 2012-07-05 2013-07-05 芯片封装及其制造方法 Pending CN103531561A (zh)

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US20140008776A1 (en) 2014-01-09
US20140291823A1 (en) 2014-10-02
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DE102013106936A1 (de) 2014-01-09
US9698086B2 (en) 2017-07-04

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