CN109378703A - 激光二极管模块 - Google Patents

激光二极管模块 Download PDF

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Publication number
CN109378703A
CN109378703A CN201810244946.0A CN201810244946A CN109378703A CN 109378703 A CN109378703 A CN 109378703A CN 201810244946 A CN201810244946 A CN 201810244946A CN 109378703 A CN109378703 A CN 109378703A
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Prior art keywords
laser diode
semiconductor element
diode module
module according
electronic switch
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CN201810244946.0A
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CN109378703B (zh
Inventor
毛里齐奥·加尔瓦诺
詹马里亚·富尔兰
安德烈娅·洛朱代斯
弗兰科·米尼奥利
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本文中描述了一种激光二极管模块。根据第一示例性实施方案，激光二极管模块包括：第一半导体管芯，其包括至少一个电子开关；以及第二半导体管芯，其包括至少一个激光二极管。第二半导体管芯使用芯片上芯片连接技术接合在第一半导体管芯上，以提供电子开关与激光二极管之间的电连接。

Description

激光二极管模块
技术领域
本公开一般涉及激光二极管封装方面，特别是用于系统级芯片(system-on-chip,SoC)或系统级封装(system-in-package,SiP)LIDAR解决方案。
背景技术
激光探测和测距(LIDAR)涉及一种通过用脉冲激光照射目标来测量到物体(称为目标)的距离的测量方法，其中距离信息可以由从光源行进到目标并返回到检测器的光脉冲的飞行时间(TOF)获得。该飞行时间有时也被称为往返延迟时间(RTDT)；测量的距离基本上是RTDT和光速之间的乘积。例如，在所谓的飞行时间相机(TOF相机)中使用LIDAR，其允许将深度信息映射到单个像素并同时将整个场景捕获在TOF相机的视野内。与此相反，扫描LIDAR通过用诸如微扫描器(也称为微扫描镜)的反射镜激光偏转来逐点扫描场景。
到达检测器的反射光脉冲的辐照度(每单位面积的功率)随着目标距离的增加而减小。为了达到高达数十或数百米的测量范围，所发射的激光的辐射功率(以及因此激光二极管的电功率)相当高。然而，为了确保激光脉冲对于站在附近的人的眼睛无害，激光脉冲必须相当短以限制激光脉冲的辐射能量。对于矩形脉冲(随时间变化的功率)，脉冲能量将与脉冲宽度和功率的乘积成比例。在一个实际的实例中，脉冲宽度在1ns至100ns的范围内，激光脉冲的峰值功率可以高达80W或更高。为了产生这种短脉冲，用于驱动激光二极管的驱动器电子器件应当能够以极短的上升和下降时间切换激光二极管的负载电流。
发明内容
本文描述了激光二极管模块。根据第一示例性实施方案，该激光二极管模块包括：第一半导体管芯，其包括至少一个电子开关；以及第二半导体管芯，其包括至少一个激光二极管。第二半导体管芯使用芯片上芯片连接技术接合在第一半导体管芯上，以提供电子开关和激光二极管之间的电连接。
根据第二示例性实施方案，激光二极管模块包括：引线框；第一半导体管芯，其包括至少一个电子开关并附接至引线框；至少一个电容器，其附接至引线框；以及第二半导体管芯，其包括至少一个激光二极管。第二半导体管芯布置在引线框和金属帽或金属夹之间，使得第二半导体管芯的底侧接触引线框，并且第二半导体管芯的顶侧接触金属夹或金属帽。
根据第三示例性实施方案，激光二极管模块包括：第一半导体管芯，其具有至少一个电子开关；第二半导体管芯，其包括至少一个激光二极管；第三半导体管芯，其包括至少一个缓冲电容器。第一半导体管芯和第三半导体管芯嵌入在一个芯片封装中，并且第二半导体管芯是接合至芯片封装表面的裸管芯。
根据第四示例性实施方案，激光二极管模块包括：第一半导体管芯，其包括至少一个电子开关；以及第二半导体管芯，其包括至少一个激光二极管。第一半导体管芯和第二半导体管芯是嵌入在电路板中的裸管芯。
根据第五示例性实施方案，激光二极管模块包括：第一半导体管芯，其包括至少一个电子开关；以及第二半导体管芯，其包括至少一个激光二极管。第一半导体管芯是嵌入在电路板的中间层级(level)中的裸管芯，而第二半导体管芯布置在电路板的顶层级或底层级中。
附图说明
参照以下描述和附图可以更好地理解本发明。附图中的部件不一定按比例绘制，而是将重点放在说明本发明的原理上。此外，在附图中，相同的附图标记表示相应的部分。在附图中：
图1示出(图a)激光二极管和用于切换激光二极管的电子开关的电路图，以及(图b)对应芯片封装的示意图。
图2示出了包括寄生电感的激光二极管封装的电等效电路。
图3示出了激光二极管的一个示例性实施方案的截面图。
图4示出了集成硅电容器的截面图。
图5示出了包括激光二极管、电子开关、电容和驱动器电路的系统级芯片(SoC)的一个示例。
图6示出了类似于图5的系统级芯片(SoC)的另一个示例的等距视图。
图7示出了示例性系统级封装的顶视图和侧视图，其中激光二极管芯片上芯片安装在与硅电容器一起布置在引线框上的驱动器IC上。
图8示出了类似于图7的替代示例。
图9示出了类似于图7的替代示例，其中激光二极管被布置在单独的壳体中并被焊接到引线框上和/或被透明的模制化合物覆盖。
图10示出了系统级封装(SiP)的一个示例的截面图，其中激光二极管、电容器、电子开关和驱动器电路被嵌入多层电路板中。
图11示出了类似于图10的系统级封装(SiP)的另一示例的截面图，其另外包括微扫描镜和相应的微镜驱动器IC。
图12示出了类似于图10的系统级封装(SiP)的另一个示例的截面图。
图13示出了系统级封装(SiP)的另一示例，其中驱动器IC和电容器被布置在eWLB封装中，其中一个或更多个激光二极管直接焊接到eWLB封装上。
具体实施方式
图1示出了激光二极管和用于驱动激光二极管的驱动电路的一部分。图1的图(a)是激光二极管DL和用于接通和关断激光二极管DL的电子开关TL的电路图。因此，激光二极管DL和电子开关TL的串联电路被耦接在接地端子GND和施加电源电压VS的电源端子之间。至少一个电容器(在本示例中为电容器C1和C2的并联电路)并联连接至激光二极管DL和电子开关TL的串联电路，以便缓冲电源电压VS并将负载电流提供至激光二极管DL。电子开关TL可以是MOSFET或任意其他合适的晶体管类型(例如BJT)。在本示例中，电子开关TL的控制(栅极或基极)端子被标记为ON。通常需要由电容器C1和C2提供的缓冲电容来实现负载电流的快速瞬变。
图1的图(b)是具有包括图(a)的电路的芯片封装10的激光二极管模块1的示意图。因此，芯片封装包括：包括电子开关TL的第一半导体管芯，包括激光二极管DL的第二半导体管芯以及提供缓冲电容的至少第三半导体管芯。对应于图1的图(a)，在本示例中使用两个单独的电容器。引线框11提供与电源端子(电压VS)、接地端子GND和控制端子ON相对应的三个管脚，其中中间端子是电源端子。包括缓冲电容器C1和C2的半导体管芯直接(即不使用接合线)接合(例如焊接)至引线框11，并在代表接地端子和电源端子的管脚之间提供缓冲电容。包括MOSFET TL的半导体管芯的底部金属化代表MOSFET的漏电极并直接接合(例如焊接)至代表电源端子的管脚。MOSFET TL的顶部金属化层中的栅电极经由接合线12’连接至代表控制端子ON的管脚。类似地，MOSFET TL的顶部金属化层中的源电极经由接合线12连接至激光二极管DL的顶表面上的阳电极。激光二极管DL的底表面处的阴电极直接接合(例如焊接)至引线框11。
图2示出了图1的激光二极管模块1的简化的电等效电路。另外，图2的电路包括栅极驱动器电路41，其耦接至MOSFET TL的控制电极并配置成根据逻辑信号SON生成适合于接通和关断MOSFET TL的驱动信号。除了栅极驱动器41之外，图2的电路与图1的图(a)基本相同，除了电感器LD、LC和LG之外，其中LD、LC和LG表示接合线12的寄生电感(对应于电感LD)、电容器C1和C2与激光二极管DL之间的电连接(对应于电感LC)以及控制端子ON与MOSFET TL的实际控制电极之间的电连接(接合线12’)(对应于电感LG)。
在LIDAR系统中，测量范围取决于激光脉冲的辐射功率。然而，为了限制脉冲能量(为了保护LIDAR系统环境中的人员的眼睛)，激光脉冲需要相当短。有效寄生电感LEFF(LEFF＝LC+LD)两端的电压降VLEFF由下式给出：
VLEFF＝LEFF·ΔiL/t上升以及VLEFF＝LEFF·ΔiL/t下降
其中ΔiL是负载电流的变化(例如从0A至40A或从40A至0A)，t上升是相应的上升时间并且t下降是相应的下降时间。假设有效电感为5nH，上升时间为2ns，则产生100V的电压降。因此，包括电容器的系统必须被设计用于超过110V的电压(假设激光二极管和MOSFET两端的电压降为10V)，以便在期望的上升时间内实现期望的峰值电流。应当注意的是，对于某些应用来说，2ns的上升时间可能太长。利用如图1(图(b))所示的积分方法，电感LEFF可以显著降低(可能低于例如2nH或甚至低于1nH)。剩余电感主要由用于连接MOSFET TL和激光二极管DL的接合线12引起。例如，当负载电流在0.5ns的上升时间内上升到40A时，当电感LEFF降低至1nH时，电压降VLEFF仍为80V。
在描述使用系统级芯片(SoC)或系统级封装(SiP)方法的激光器模块的各种示例之前，其可以有助于进一步减小有效电感LEFF，下面参考图3和图4描述激光二极管和集成电容器的结构。图3示出了激光二极管的一个示例实现方式。因此，激光二极管20包括衬底2，在衬底2上利用外延生长形成有多个功能层(层25、26和27)。在所描绘的示例中，衬底2包括GaN半导体材料，在其上布置有硅掺杂AlGaN覆层28和硅掺杂GaN波导层27。如上所述，设置有具有1至5个GaInN量子膜和GaN势垒层的具有多量子阱结构(MQW结构)的有源层25。在有源层上施加有镁掺杂的GaN波导层26和镁掺杂的AlGaN覆层22。此外，在覆层22上可以额外地施加有例如由镁掺杂的GaN构成的一个或多个接触层，同时在衬底2和覆层之间可以同样地布置有一个或多个中间层(未示出)。所描绘的形成激光二极管20的层序列适于产生紫外至绿光的电磁辐射，例如，在蓝色波长范围内。
作为本文所述的基于氮化物的半导体材料的替代方案，激光二极管例如还可以包括基于磷化物和砷化物的半导体材料，诸如GaAs衬底2和其上的100nm厚的中间层28，中间层28由具有III族材料的约40％的Al比例的AlGaAs构成和/或由具有III族材料的约50％的In比例的InGaP构成；其上的2μm厚的InAlP波导层27；其上的100nm厚的InGaAlP/InGaP量子膜/势垒层MQW结构25，其具有约50％的In比例和约25％的Al比例；其上的2μm厚的InAlP波导层26；以及其上的100nm厚的InGaP中间层22和另外的300nm厚的GaAs接触层(未示出)。这种类型的半导体层的序列可能适合于产生绿光到红外电磁辐射，并且特别是在红波长范围内的电磁辐射。可以使用外延生长在衬底2上形成功能层。作为替代方案，可以使用薄膜技术来形成半导体层序列。这意味着功能层在衬底上生长并且随后转移到载体衬底，载体衬底然后形成所描绘的半导体层序列的衬底2。根据生长技术，n导电层(或p导电层)可以面向衬底2。
如图3所示，激光二极管可以经由布置在衬底2的表面上的与功能层25、26和27间隔开的电极21以及经由布置在功能层25、26和27的堆叠体上的电极23电接触。因此，电极21和23可以各自具有包含Ag、Au、Sn、Ti、Pt、Pd、Cr、Ni和/或Ge的一个或多个层。尽管上面已经描述了激光二极管的具体示例，但是应当理解，各种类型的激光二极管本身是已知的，并且本文描述的示例性实施方案不限于任何特定类型的激光二极管。应当注意的是，在图3的示例中，激光二极管的阳极和阴极(电极21和23)位于半导体衬底2的同一侧。然而，可以形成非常类似的结构：使其电极位于半导体衬底的相反侧上。根据本文描述的各种示例性实施方案可以使用两种类型的激光二极管。激光二极管的一个示例在例如公开US 2011/0188530A1中进行了描述。
图4示出了集成在半导体本体31中的电容器30的一个示例的截面图。在半导体本体31中形成有多个沟槽37、38。第一电极34在硅本体的表面上遍及沟槽37、38延伸。沟槽的目的基本上是增加电极的面积并由此增加可实现的电容。第一电极34被绝缘电介质层35覆盖，并且第二电极36被布置在电介质35上并且延伸遍及沟槽37，而沟槽38被电极材料填充并且与第一电极34电连接。在本示例中多晶硅用作电极材料。然而，应当理解，也可以使用其他材料。在半导体本体的顶表面上，电极34和36可以分别通过金属电极/端子32和33接触。应当注意的是，在图4的示例中，电容器30的两个电极/端子都位于半导体本体31的同一侧。然而，可以形成非常类似的结构：使其电极位于半导体本体31的相反侧上。根据本文所述的各种示例性实施方案，可以使用两种类型的电容器。应当注意的是，如图4所示的沟槽电容器本身是已知的并且可以商购，因此在此不再进一步讨论。
图5示出了用于形成包括激光二极管(参见图2，激光二极管DL)、具有(栅极)驱动器电路41(参见图2，驱动器电路41)与电子开关40和电容30(参见图2，缓冲电容器C1、C2)的激光二极管模块1的系统级芯片(SoC)方法的一个示例。在本示例中，四个电子开关40a、40b、40c和40d(统称为40)和相应的驱动器电路41集成在图5中被称为驱动器IC 4的一个半导体管芯中(参见图2)。驱动器IC 4包括半导体衬底4’(例如硅衬底)和布置在半导体衬底4’的顶表面上的金属化层中的芯片互连42。芯片互连42允许使用芯片上芯片接合技术将激光二极管20和电容器30直接接合(即，不使用接合线)在驱动器IC 4上。如从图5中可见，四个激光二极管20a、20b、20c、20d(统称为20)以倒装芯片方式安装在驱动器IC 4上。类似地，电容器30a、30b、30c和30d(统称为30)也以倒装芯片方式安装在驱动器IC 4上。
在本示例中，激光二极管20具有在二极管所集成在其中的半导体管芯(参见图3，衬底2)的同一侧上的两个电极(阳极和阴极)。类似地，电容器30具有在一个或更多个电容器所集成在其中的半导体管芯(参见图4，硅本体31)的同一侧上的它们的电极。使两个电极位于同一侧允许将电容器30和激光二极管20以倒装芯片方式安装在驱动器IC 4上，这在激光二极管、电子开关和电容器之间需要非常短的电线。短的电线导致相应的低电感(例如，低于0.5nH或甚至低于0.3nH的有效电感LEFF)。在本示例中，激光二极管20垂直布置在驱动器IC 4的其中电子开关40定位成切换激光二极管20的负载电流的部分之上。在本示例中，在激光二极管模块1中包括四个激光二极管。应当理解，在其他示例中，可以在一个激光二极管模块中包括更多或更少的激光二极管(甚至单个激光二极管)。尽管在本示例中电容器30芯片上芯片安装在驱动器IC 4上，但是沟槽电容器也可以与电子开关40和(栅极)驱动器电路41一起集成在一个半导体管芯中。
在图5的示例中，由激光二极管发射的辐射沿着与驱动器IC 4的顶表面平行的轴线传播。图6示出了包括一个或多个激光二极管的SoC激光二极管模块，其沿着与驱动器IC4的顶表面垂直的轴线发射辐射。除此之外，图6的示例基本上与先前的图5的示例相同。然而，由于图5和图6的示例中的辐射方向不同，所以可以应用用透明模制化合物(例如树脂)覆盖激光二极管20的不同方法。
在图5和图6的示例中，激光二极管20具有在半导体管芯的同一侧上的阳极和阴极。图7和图8的示例示出了用于形成激光二极管模块的示例性系统级封装(SiP)方法，其中驱动器IC 4安装在引线框11上并且一个或多个激光二极管20使用芯片上芯片安装技术附接(例如，焊接)在驱动器IC 4上，而电容器30a、30b安装(例如焊接)在与驱动器IC 4相邻的引线框11上，而不需要接合线。
图7的图(a)是第一示例的顶视图，其中激光二极管20具有在半导体管芯的相反侧上的阳极和阴极。激光二极管管芯的一侧(阳极或阴极)使用芯片上芯片安装技术附接(例如，焊接)至驱动器IC 4的相对应的芯片互连焊盘(类似于先前示例中的芯片互连42)，而激光二极管管芯的另一侧经由接合线12”连接。接合线12用作电源端子和驱动器IC 4以及控制端子和驱动器IC 4之间的电连接。图7的图(b)示出了与图(a)的顶视图相对应的侧视图。图8示出了图7的示例的示例性替代方案。因此，接合线12”被夹12”’取代，这可导致较低的有效电感LEFF。除了夹12”’之外，图8的示例与先前的图7的示例相同。包括驱动器IC 4、一个或更多个激光二极管20和一个或更多个电容器30的半导体管芯可以用(至少部分)透明树脂(模制化合物)封装，其允许发射激光同时保护激光二极管。
图9的示例示出了与先前的图7的示例类似的另一个SiP激光二极管模块。图(a)是顶视图并且图(b)是相对应的侧视图。相应地，电容器30a、30b安装(例如焊接)在引线框11上，而不需要任何接合线。类似地，驱动器IC 4也安装至引线框11，其中在本示例中也不需要接合引线；可以使用倒装芯片安装技术或球栅阵列(BGA)技术。驱动器IC和电容器30使用树脂或任何合适的模制化合物材料来封装，其不需要是透明的。在封装体15外部，经封装的激光二极管安装在引线框11上。为了在驱动器IC 4和激光二极管封装20’之间提供低电感连接，激光二极管管芯20其顶侧被附接至金属帽201中并且其底侧被附接至引线框11。图9的图(c)更详细地示出了激光二极管封装20’。用于激光二极管20的封装基本上与MOSFET器件已知的所谓的封装相同。封装中必须提供一个小开口，以允许发射激光。作为DirectFET封装的替代方案，可以使用将激光二极管20的顶电极连接至引线框11的简单的夹(类似于图8中所示的夹12”’)。最后，激光二极管可以用透明材料(例如树脂、模制化合物)覆盖。
图10、图11和图12示出了SiP激光二极管模块的另外的示例，其中包括驱动器IC4、一个或更多个激光二极管20、一个或更多个电容器30和(可选地)其他器件的半导体管芯被嵌入(多层)电路板5中。根据所描绘的示例，模块包括至少三个半导体管芯，其中第一半导体管芯包括至少一个电子开关40和相应的驱动器电路(驱动器IC 4)，第二半导体管芯包括至少一个激光二极管20，并且第三半导体管芯包括至少一个缓冲电容器30。应当理解的是，电容器不一定是硅电容器(沟槽电容器，参见图4)。在本示例中，可以使用诸如陶瓷电容器的其他类型的电容器来代替。在图10的示例中，形成驱动器IC 4的半导体管芯具有在同一侧上的所有接触焊盘(特别是形成漏电极和源电极的焊盘)，使得驱动器IC 4可以附接至在电路板5的金属化层52中的相应的金属焊盘。如图10所示，利用通孔54将漏极电势通过电路板5向下引导至层51。
在图11的示例中，形成驱动器IC 4的半导体管芯具有在其顶侧上的在半导体管芯中包括的MOSFET的漏极接触以及在其底侧上的其他接触(特别是源极接触)。因此，MOSFET的漏极和源极连接至在金属化层52和另一金属化层53中的金属焊盘。如图11所示，利用通孔54’将漏极电势通过电路板5向下引导至层51。在图10和图11的两个示例中，包括一个或更多个电容器30(或者另选地，例如陶瓷电容器)的半导体管芯被附接至位于层52下方的金属化层51中的金属焊盘。激光器二极管连接在层51中的金属焊盘(附接至激光二极管20的阴极)和层52中的另一金属焊盘(附接至激光二极管20的阳极)之间。通孔55可以桥接激光二极管管芯20的表面与层52之间的垂直距离。通孔56将驱动器IC的控制端子向下引导至层51。
在图11的示例中，包括微扫描镜6(微扫描器)的第四半导体管芯以及相应的扫描仪驱动器IC 61被嵌入在电路板5中。微扫描镜6与激光二极管对准以接收并重定向从激光二极管20发射的激光。通常，用于嵌入裸半导体管芯的材料可以是用于制造电路板的任何已知材料。将裸管芯嵌入电路板中的过程本身是已知的，因此在此不再进一步讨论。将裸管芯嵌入电路板中还使得能够减小承载激光二极管20的负载电流的负载电流路径中的有效电感。
图12示出了SiP激光二极管模块的另一示例，其中驱动器IC 4和一个或更多个电容器30被嵌入在电路板中，并且激光二极管20被以倒装芯片方式安装在电路板的表面上。驱动器IC 4和电容器两者都被嵌入在电路板5的两个金属化层之间。焊球51可以附接至电路板5的底表面以允许将电路板焊接至另一电路板或类似的载板上。因此，图12的电路板5也可以被称为封装式PCB。先前的图10和图11的示例和图12的现有示例之间的一个区别在于三个电路元件驱动器IC 4、电容器30和激光二极管20的不同布置顺序。如图12所示，激光二极管布置在电路板5的相对电容器30的另一层级，而在先前的示例中这些元件布置在相同的层级。
图13的图(a)和图(b)示出了SiP激光二极管模块的另一个示例。在该示例中，驱动器IC 4和一个或更多个电容器30被包括在增强型晶片级球栅阵列(eWLB)封装中。激光二极管(裸管芯)可以被焊接在eWLB封装的底侧上的焊球54上或焊接至eWLB封装的顶侧上的专用焊盘55。
虽然已经针对一个或更多个实现方式说明和描述了本发明，但是在不脱离所附权利要求书的精神和范围的情况下可以对所说明的示例进行改变和/或修改。特别是关于由上述部件或结构(单元、组件、装置、电路、系统等)执行的各种功能、用于描述这些部件的术语(包括对“装置”的引用)旨在(除非另外指出)与执行所描述的部件的指定功能(例如，功能上等同)的任何部件或结构对应，即使在结构上与执行本文所示的本发明示例性实现方式中的功能的所公开结构不等同。例如，在任何实施方案中，电容器可以被集成在与激光二极管驱动器IC 4相同的半导体管芯中，而不是将电容器附接至驱动器IC 4上。
另外，虽然可能已经针对几个实现方式中的仅仅一个公开了本发明的特定特征，但是这种特征可以与其他实现方式的一个或更多个其他特征组合，这对于任何给定的或特定应用会是期望和有利的。此外，就具体实施方式部分和权利要求书中使用的术语“包含”、“含有”、“具有”、“带有”、“有”或其变型而言，这样的术语旨在以类似于术语“包括”的方式而包括在内。

Claims (31)

1.一种激光二极管模块，包括：
第一半导体管芯，其包括至少一个电子开关；以及
第二半导体管芯，其包括至少一个激光二极管；
其中所述第二半导体管芯是使用芯片上芯片连接技术接合在所述第一半导体管芯上的，以提供所述电子开关与所述激光二极管之间的电连接。
2.根据权利要求1所述的激光二极管模块，还包括：
第三半导体管芯，其包括至少一个缓冲电容器；所述第三半导体管芯使用芯片上芯片连接技术接合在所述第一半导体管芯上。
3.根据权利要求1或2所述的激光二极管模块，
其中所述第一半导体管芯还包括至少一个驱动器电路，所述至少一个驱动器电路耦接至所述电子开关并被配置成驱动所述电子开关接通及关断。
4.根据权利要求1至3中任一项所述的激光二极管模块，
其中所述第二半导体管芯具有在同一侧上的两个电极并以倒装芯片方式安装在所述第一半导体管芯上。
5.根据权利要求2所述的激光二极管模块，
其中所述第三半导体管芯具有在同一侧上的两个电极并以倒装芯片方式安装在所述第一半导体管芯上。
6.根据权利要求1至5中任一项所述的激光二极管模块，
其中所述第二半导体管芯具有在所述第二半导体管芯的顶侧上的第一电极和在所述第二半导体管芯的底侧上的第二电极，所述第二电极使用芯片上芯片连接技术接合至所述第一半导体管芯，所述第一电极使用夹或接合线连接至所述第一半导体管芯。
7.根据权利要求1至6中任一项所述的激光二极管模块，
其中所述电子开关和所述激光二极管串联连接在电源端子和接地端子之间。
8.根据权利要求2所述的激光二极管模块，
其中所述电子开关和所述激光二极管串联连接在电源端子和接地端子之间，以及
其中所述缓冲电容器连接在电源端子和接地端子之间。
9.根据权利要求1至8中任一项所述的激光二极管模块，
其中所述第一半导体管芯包括至少一个缓冲电容器。
10.根据权利要求1至9中任一项所述的激光二极管模块，还包括：
引线框，所述第一半导体管芯附接在所述引线框上。
11.根据权利要求10所述的激光二极管模块，
其中所述第一半导体管芯以倒装芯片方式安装在所述引线框上而不使用接合线。
12.根据权利要求10或11所述的激光二极管模块，还包括：
附接在所述引线框上的至少一个电容器。
13.一种激光二极管模块，包括：
引线框；
第一半导体管芯，其包括至少一个电子开关并附接至所述引线框；
至少一个电容器，其附接至所述引线框；以及
第二半导体管芯，其包括至少一个激光二极管；所述第二半导体管芯布置在所述引线框和金属帽或金属夹之间，使得所述第二半导体管芯的底侧接触所述引线框，并且所述第二半导体管芯的顶侧接触所述金属夹或所述金属帽。
14.根据权利要求13所述的激光二极管模块，
其中所述第一半导体管芯以倒装芯片方式安装在所述引线框上而不使用接合线。
15.根据权利要求13或14所述的激光二极管模块，
其中所述至少一个电容器表面安装在所述引线框上而不使用接合线。
16.一种激光二极管模块，包括：
第一半导体管芯，其包括至少一个电子开关；
第二半导体管芯，其包括至少一个激光二极管；以及
第三半导体管芯，其包括至少一个缓冲电容器；
其中所述第一半导体管芯和所述第三半导体管芯嵌入在一个芯片封装中，所述第二半导体管芯是接合至所述芯片封装的表面的裸管芯。
17.根据权利要求16所述的激光二极管模块，
其中所述芯片封装是增强型晶片级球栅阵列(eWLB)封装。
18.根据权利要求16或17所述的激光二极管模块，
其中所述第二半导体管芯焊接在布置于所述芯片封装的顶侧或底侧上的焊盘上。
19.根据权利要求16至18中任一项所述的激光二极管模块，
其中所述电子开关和所述激光二极管串联连接在电源端子和接地端子之间，
其中所述缓冲电容器连接在电源端子和接地端子之间。
20.一种激光二极管模块，包括：
第一半导体管芯，其包括至少一个电子开关；以及
第二半导体管芯，其包括至少一个激光二极管；
其中所述第一半导体管芯和所述第二半导体管芯是嵌入在电路板中的裸管芯。
21.根据权利要求20所述的激光二极管模块，还包括：
第三半导体管芯，其包括至少一个缓冲电容器，所述第三半导体管芯嵌入在所述电路板中。
22.根据权利要求20或21所述的激光二极管模块，
其中在所述第一半导体管芯中包括缓冲电容器。
23.根据权利要求22所述的激光二极管模块，
其中所述缓冲电容器被配置成缓冲电源电压。
24.根据权利要求20至23中任一项所述的激光二极管模块，还包括：
第四半导体管芯，其包括微扫描镜。
25.根据权利要求20至24中任一项所述的激光二极管模块，
其中所述电子开关和所述激光二极管串联连接在电源端子和接地端子之间。
26.根据权利要求21或22所述的激光二极管模块，
其中所述电子开关和所述激光二极管串联连接在电源端子和接地端子之间，以及
其中所述缓冲电容器连接在电源端子和接地端子之间。
27.根据权利要求21所述的激光二极管模块，
其中所述第三半导体管芯布置在所述电路板的第一金属化层上。
28.根据权利要求20至27中任一项所述的激光二极管模块，
其中所述第二半导体管芯布置在所述电路板的第一金属化层和第二金属化层之间。
29.根据权利要求28所述的激光二极管模块，
其中所述第一半导体管芯布置在所述电路板的所述第二金属化层和第三金属化层之间。
30.一种激光二极管模块，包括：
第一半导体管芯，其包括至少一个电子开关；以及
第二半导体管芯，其包括至少一个激光二极管；
其中所述第一半导体管芯是嵌入在电路板的中间层级中的裸管芯，
其中所述第二半导体管芯布置在所述电路板的顶层级或底层级中。
31.根据权利要求30所述的激光二极管模块，还包括：
嵌入在电路板中间层级中的至少一个缓冲电容器。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111224317A (zh) * 2020-04-20 2020-06-02 深圳市汇顶科技股份有限公司 激光发射装置
CN111834887A (zh) * 2019-04-15 2020-10-27 富士施乐株式会社 发光装置、光学装置及信息处理装置
CN112117635A (zh) * 2019-06-19 2020-12-22 富士施乐株式会社 发光装置
CN113725724A (zh) * 2021-09-01 2021-11-30 上海晓本技术服务有限公司 一种激光脉冲发射集成电路模组、制造方法及系统
WO2022135087A1 (zh) * 2020-12-21 2022-06-30 华为技术有限公司 一种激光发射模组、激光雷达及移动平台

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016208431A1 (de) * 2016-05-17 2017-11-23 Osram Opto Semiconductors Gmbh Anordnung mit einem elektrischen Bauteil
US20180278011A1 (en) 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module
DE102017108050B4 (de) * 2017-04-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstrahlungsquelle
WO2019202874A1 (ja) * 2018-04-19 2019-10-24 ソニーセミコンダクタソリューションズ株式会社 半導体レーザ駆動装置およびその製造方法
US10797601B2 (en) * 2018-07-18 2020-10-06 Efficient Power Conversion Corporation Current pulse generator with integrated bus boost circuit
JP2020088020A (ja) * 2018-11-16 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 検出回路、駆動回路および発光装置
EP3890125B1 (en) * 2018-11-27 2023-11-29 Sony Semiconductor Solutions Corporation Drive device and light-emitting device
DE112019006063T5 (de) * 2018-12-05 2021-08-19 Rohm Co., Ltd. Halbleiterlaserbauteil
US11189985B2 (en) * 2018-12-06 2021-11-30 Ii-Vi Delaware, Inc. Optoelectronic assembly
JP7318305B2 (ja) * 2019-05-17 2023-08-01 富士フイルムビジネスイノベーション株式会社 発光装置
JP7275894B2 (ja) * 2019-06-20 2023-05-18 株式会社デンソー 半導体レーザ光源モジュール、半導体レーザ装置
US11876346B2 (en) 2019-06-26 2024-01-16 Analog Devices, Inc. Continuous wave laser driver with energy recycling
JPWO2021014917A1 (zh) * 2019-07-23 2021-01-28
DE112020003569A5 (de) 2019-07-25 2022-04-28 Quantum Technologies UG (haftungsbeschränkt) NV-Zentrum basierender mikrowellenfreier Quantensensor und dessen Anwendungen und Ausprägungen
CN114175425A (zh) * 2019-07-30 2022-03-11 索尼半导体解决方案公司 半导体激光驱动装置、电子设备和半导体激光驱动装置的制造方法
JP7356287B2 (ja) 2019-08-06 2023-10-04 ソニーセミコンダクタソリューションズ株式会社 半導体レーザ駆動装置、および、電子機器
DE102019121384A1 (de) * 2019-08-07 2021-02-11 Forschungsverbund Berlin E.V. Optischer Pulsgenerator und Verfahren zum Betrieb eines optischen Pulsgenerators hoher Leistung und kurzen Pulsen
US20220285909A1 (en) * 2019-08-20 2022-09-08 Sony Semiconductor Solutions Corporation Semiconductor laser driving apparatus, electronic equipment, and manufacturing method of semiconductor laser driving apparatus
US20220303443A1 (en) * 2019-08-28 2022-09-22 Ningbo Sunny Opotech Co., Ltd. Tof camera module and projection module thereof, and electronic device
US20220294179A1 (en) * 2019-08-30 2022-09-15 Sony Semiconductor Solutions Corporation Semiconductor laser driving apparatus, electronic equipment, and manufacturing method of semiconductor laser driving apparatus
EP4027379A4 (en) * 2019-09-04 2022-11-30 Sony Semiconductor Solutions Corporation SEMICONDUCTOR LASER DRIVER, ELECTRONIC EQUIPMENT AND METHOD FOR MAKING SEMICONDUCTOR LASER DRIVER
DE102020114782A1 (de) 2020-01-07 2021-07-08 Elmos Semiconductor Se Mechanikloses LIDAR-System für eine Drohne
DE102020124564A1 (de) 2020-01-07 2021-07-08 Elmos Semiconductor Se Linse für ein mechanikloses LIDARSystem für eine Drohne
EP4239370A3 (de) 2020-01-07 2024-01-03 Elmos Semiconductor SE Lichtmodul und lidar-vorrichtung mit mindestens einem derartigen lichtmodul
EP4071945A4 (en) * 2020-01-13 2023-09-06 Nuvoton Technology Corporation Japan SEMICONDUCTOR DEVICE
US11600966B2 (en) * 2020-02-03 2023-03-07 Analog Devices International Unlimited Company Light source system
US20210273405A1 (en) * 2020-02-03 2021-09-02 Analog Devices International Unlimited Company Light source system
US11604283B2 (en) * 2020-02-03 2023-03-14 Analog Devices International Unlimited Company Light source system
US10951003B1 (en) * 2020-02-25 2021-03-16 Inphi Corporation Light source for integrated silicon photonics
US20230142319A1 (en) * 2020-04-08 2023-05-11 Rohm Co., Ltd. Semiconductor light-emitting device
JP7155455B2 (ja) * 2020-06-22 2022-10-18 シチズン電子株式会社 Ｖｃｓｅｌモジュール
IT202100008057A1 (it) * 2021-03-31 2022-10-01 St Microelectronics Srl Dispositivo elettronico migliorato per applicazioni lidar
US20220029383A1 (en) * 2020-07-23 2022-01-27 Analog Devices International Unlimited Company Light source system
US20220131327A1 (en) * 2020-10-22 2022-04-28 Argo AI, LLC Rapid recharge laser driver circuit
US20240006850A1 (en) * 2020-11-06 2024-01-04 Sony Semiconductor Solutions Corporation Semiconductor laser driving apparatus, lidar including semiconductor laser driving apparatus, and vehicle including semiconductor laser driving apparatus
DE112021005241B4 (de) * 2020-11-13 2024-05-08 Rohm Co., Ltd. Lichtemittierende halbleitervorrichtung
IT202100000227A1 (it) * 2021-01-07 2022-07-07 St Microelectronics Srl Modulo elettronico per la generazione di impulsi luminosi per applicazioni lidar, e metodo di fabbricazione del modulo elettronico
DE102021101584B3 (de) 2021-01-25 2022-03-10 Elmos Semiconductor Se Mechanikloses ISO26262 konformes LIDAR-System
DE102021128923A1 (de) 2021-01-25 2022-07-28 Elmos Semiconductor Se Mechanikloses ISO26262 konformes LIDAR-System
JP2022146597A (ja) * 2021-03-22 2022-10-05 富士フイルムビジネスイノベーション株式会社 発光装置及び計測装置
JPWO2022259903A1 (zh) * 2021-06-09 2022-12-15
CN113572024A (zh) * 2021-07-13 2021-10-29 Oppo广东移动通信有限公司 光发射器、深度模组和终端
CN113922206A (zh) * 2021-10-09 2022-01-11 探维科技(北京)有限公司 一种激光雷达发射装置和方法
WO2023100887A1 (ja) * 2021-11-30 2023-06-08 ローム株式会社 半導体発光装置および半導体発光ユニット
WO2023156513A2 (de) * 2022-02-16 2023-08-24 Elmos Semiconductor Se Modul zur abgabe elektromagnetischer strahlung, insbesondere laserlichtmodul
DE102023100352B3 (de) 2022-02-16 2023-04-27 Elmos Semiconductor Se LIDAR VCSEL-Laser-Modul mit geringen parasitären Induktivitäten
WO2023229021A1 (ja) * 2022-05-27 2023-11-30 ローム株式会社 半導体発光装置
WO2023248895A1 (ja) * 2022-06-20 2023-12-28 ローム株式会社 半導体発光装置
DE102022209806A1 (de) 2022-09-19 2024-03-21 Robert Bosch Gesellschaft mit beschränkter Haftung Kondensatorbauelement und Bauteilanordnung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101127384A (zh) * 2006-08-17 2008-02-20 日亚化学工业株式会社 发光装置
CN102810624A (zh) * 2011-05-30 2012-12-05 Lg伊诺特有限公司 发光器件封装和包括该发光器件封装的照明系统
CN103531561A (zh) * 2012-07-05 2014-01-22 英飞凌科技股份有限公司 芯片封装及其制造方法
CN103579211A (zh) * 2012-08-02 2014-02-12 乐金显示有限公司 发光二极管封装
CN103891065A (zh) * 2011-10-20 2014-06-25 欧司朗光电半导体有限公司 发射辐射的器件
US9570883B2 (en) * 2011-12-28 2017-02-14 Intel Corporation Photonic package architecture

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW365071B (en) * 1996-09-09 1999-07-21 Toshiba Corp Semiconductor light emitting diode and method for manufacturing the same
US6005262A (en) 1997-08-20 1999-12-21 Lucent Technologies Inc. Flip-chip bonded VCSEL CMOS circuit with silicon monitor detector
DE10041079A1 (de) 2000-08-22 2002-03-14 Osram Opto Semiconductors Gmbh Lasermodul mit Ansteuerschaltung
US20030034491A1 (en) * 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
WO2003038955A1 (de) * 2001-10-15 2003-05-08 Infineon Technologies Ag Laserdiodeneinheit und anordnung zum betreiben einer laserdiode
DE202006005148U1 (de) 2006-03-29 2007-08-09 Ic-Haus Gmbh Schaltungsanordnung zum Erzeugen schneller Laserimpulse
DE102008012859B4 (de) 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
US9041015B2 (en) * 2013-03-12 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and methods of forming same
US10158211B2 (en) * 2015-09-22 2018-12-18 Analog Devices, Inc. Pulsed laser diode driver
CN107732651B (zh) 2016-08-12 2020-08-04 美国亚德诺半导体公司 光发射器封装件
US20180278011A1 (en) 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101127384A (zh) * 2006-08-17 2008-02-20 日亚化学工业株式会社 发光装置
CN102810624A (zh) * 2011-05-30 2012-12-05 Lg伊诺特有限公司 发光器件封装和包括该发光器件封装的照明系统
CN103891065A (zh) * 2011-10-20 2014-06-25 欧司朗光电半导体有限公司 发射辐射的器件
US9570883B2 (en) * 2011-12-28 2017-02-14 Intel Corporation Photonic package architecture
CN103531561A (zh) * 2012-07-05 2014-01-22 英飞凌科技股份有限公司 芯片封装及其制造方法
CN103579211A (zh) * 2012-08-02 2014-02-12 乐金显示有限公司 发光二极管封装

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111834887A (zh) * 2019-04-15 2020-10-27 富士施乐株式会社 发光装置、光学装置及信息处理装置
US11973321B2 (en) 2019-04-15 2024-04-30 Fujifilm Business Innovation Corp. Light emitting device
CN112117635A (zh) * 2019-06-19 2020-12-22 富士施乐株式会社 发光装置
CN111224317A (zh) * 2020-04-20 2020-06-02 深圳市汇顶科技股份有限公司 激光发射装置
CN111224317B (zh) * 2020-04-20 2021-03-19 深圳市汇顶科技股份有限公司 激光发射装置
WO2022135087A1 (zh) * 2020-12-21 2022-06-30 华为技术有限公司 一种激光发射模组、激光雷达及移动平台
CN113725724A (zh) * 2021-09-01 2021-11-30 上海晓本技术服务有限公司 一种激光脉冲发射集成电路模组、制造方法及系统
WO2023029774A1 (zh) * 2021-09-01 2023-03-09 上海晓本技术服务有限公司 一种激光脉冲发射集成电路模组、制造方法及系统
CN113725724B (zh) * 2021-09-01 2024-02-27 上海沛塬电子有限公司 一种激光脉冲发射集成电路模组、制造方法及系统

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