TWI438936B - 發光二極體封裝系統及其形成方法 - Google Patents

發光二極體封裝系統及其形成方法 Download PDF

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TWI438936B
TWI438936B TW100125394A TW100125394A TWI438936B TW I438936 B TWI438936 B TW I438936B TW 100125394 A TW100125394 A TW 100125394A TW 100125394 A TW100125394 A TW 100125394A TW I438936 B TWI438936 B TW I438936B
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light
emitting diode
light emitting
package system
molding material
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TW201240155A (en
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yu sheng Tang
Hsin Hung Chen
Hao Wei Ku
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Taiwan Semiconductor Mfg
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Description

發光二極體封裝系統及其形成方法
本發明係有關於一種半導體封裝系統，且特別是有關於一種發光二極體封裝系統及其製造方法。
發光二極體係一種半導體光源，且可用以取代傳統的磷光燈光源(fluorescent)。一般而言，發光二極體為由化合物材料所形成的半導體二極體。若二極體為順向偏差(forward biased)，由一個節點(node)供應的電子與另一個節點所供應的電洞再結合，而以光子(photon)的形式釋放能量。藉由化合物材料的選擇，發光二極體的出光顏色可由紅至藍改變。
本發明一實施例提供一種發光二極體封裝系統，包括：一發光二極體，設置在一基板的一表面上；一模塑材料，覆蓋該發光二極體；以及一光轉換材料，設置在該發光二極體上，且藉由該模塑材料與該發光二極體間隔。
本發明另一實施例提供一種發光二極體封裝系統，包括：一發光二極體，設置在一基板的一表面上；一模塑材料，設置在該發光二極體上並鄰接該發光二極體；以及一光轉換材料，設置在該發光二極體上並鄰接該模塑材料，其中該光轉換材料設置在該模塑材料的一開口中，且該光轉換材料的一表面與該模塑材料的一表面大體上齊平。
本發明又一實施例提供一種發光二極體封裝系統的形成方法，包括：在一基板的一表面上接合複數個發光二極體；形成一模塑材料覆蓋該發光二極體；在各個該發光二極體上形成一光轉換材料，其中該光轉換材料藉由該模塑材料與各個該發光二極體間隔；以及切割該基板以形成複數個發光二極體封裝系統。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
一般而言，形成發光二極體封裝系統的方法係將發光二極體接合至基板上。預先形成具有複數個開口的模塑結構(molding structure)。而後，將具有開口的模塑結構設置在基板上，使得各個發光二極體分別放置在各開口中。在開口的側壁有反射表面，使得由發光二極體發出的光可在反射表面反射。然後施加磷/矽膠(phosphor/silicone gel)並填入各開口中覆蓋發光二極體。
發明人發現形成開口側壁具有反射表面的開口的模塑結構的方法相當複雜。此外，磷在矽膠中可能為隨機的分佈。發光二極體封裝體的分級(bin)(亦即，例如輸出、顏色、電壓等性質)可能不易控制。
以下依本發明之不同特徵舉出數個不同的實施例。本發明中特定的元件及安排係為了簡化，但本發明並不以這些實施例為限。此外，為簡明起見，本發明在不同例子中以重複的元件符號及/或字母表示，但不代表所述各實施例及/或結構間具有特定的關係。另外，於第二元件上形成第一元件的描述可包括第一元件與第二元件直接接觸的實施例，亦包括具有額外的元件形成在第一元件與第二元件之間、使得第一元件與第二元件並未直接接觸的實施例。此外，空間上的相對概念的用語，例如較低、較高、水平的、垂直的、之上、之下、上部、下部、頂部、底部等係用以說明元件之間的關係，各用語可包括含有元件的裝置的不同位置。
第1圖係根據一實施例，說明包括發光二極體(LED)的封裝系統的剖面圖。在第1圖中，LED封裝系統100包括LED 110設置於基板101的表面上。在一些實施例中，基板101可包括元素半導體(elementary semiconductor)，包括結晶(crystal)、多晶(polysrystalline)、非晶矽(amorphous)結構的矽或鍺；化合物半導體包括碳化矽(silicon carbide)、砷化鎵(gallium arsenic)、磷化鎵(gallium phosphide)、磷化銦(indium phosphide)、砷化銦(indium arsenide)、銻化銦(indium antimonide)；半導體合金包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP、GaInAsP；其他適合的材料；或前述之組合。在其他實施例中，半導體合金基板可具有梯度式(gradient)矽鍺(SiGe)元件，亦即矽鍺的組成比例會隨著位置不同而改變。在另一些實施例中，在矽基板上形成矽鍺合金。在又一些實施例中，矽鍺基板具應變力(strained)。此外，半導體基板可包括絕緣層上的半導體，例如絕緣層上有矽(silicon on insulator；SOI)或薄膜電晶體(thin film transistor；TFT)。在一些實施例中，半導體基板可包括摻雜磊晶層(doped epi layer)或埋層(buried layer)。在其他實施例中，化合物半導體基板可具有多層結構，或基板可包括多層化合物半導體結構。在一些實施例中，基板101可包括透明基板。透明基板例如可為藍寶石基板、玻璃基板、氧化鋁基板、或其他透明基板。
在一些實施例中，LED 110可包括至少一個N型半導體材料層以及至少一個P型半導體材料。依據出光顏色，半導體材料層可包括至少一種材料如砷化鎵(GaAs)、砷化鎵鋁(AlGaAs)、磷化鎵砷(GaAsP)、磷化鎵銦鋁(AlGaInP)、磷化鎵(GaP)、磷化鎵砷(GaAsP)、磷化鋁鎵銦(AlGaInP)、氮化銦鎵(InGaN)、氮化鎵(GaN)、磷化鋁鎵(AlGaP)、硒化鋅(ZnSe)、碳化矽(SiC)、矽、碳、氮化硼(BN)、氮化鋁(AlN)、氮化鋁鎵(AlGaN)、氮化鋁鎵銦(AlGaInN)、其他半導體材料、及/或前述之組合。
在實施例中，LED 110可選擇性(optionally)的包括至少一多重量子井(multiple-quantum-wells)層、單一量子井(single-quantum-well)層、及/或量子點(quantum-dots)層設置在N型半導體材料層與P型半導體材料之間。量子井或量子點層可為由N型半導體材料層與P型半導體層料所分別提供的電子與電洞再結合的地方。
在一些實施例中，LED封裝體系統100可包括與電源以不同電壓位準電性耦接的導電結構111及113。例如，LED 110的電極可藉由導線115與導電結構113電性耦接。LED 110另一個電極則藉由另外的導線115與導電結構111電性耦接。在其他實施例中，LED 110的電極可藉由導線115與導電結構113電性耦接。LED 110另一個電極則不藉由導線115，而是與導電結構111直接電性耦接。在一些實施例中，導電結構111及113的材料可包括例如不含鉛的合金(例如金(Au)或錫/銀/銅(Sn/Ag/Cu))、含鉛合金(例如鉛/錫(Pb/Sn)合金)、銅、鋁、銅鋁、導電聚合物、其他凸塊材料、及/或前述之組合。
參照第1圖，LED封裝系統100可包括模塑材料(molding material)120設置在LED 110上並覆蓋LED 110。在一些實施例中，模塑材料120可鄰接LED 110。在一些實施例中，模塑材料120可包括透明矽膠材料，使得由LED 110產生的光可穿過模塑材料120。
再次參照第1圖，LED封裝系統100可包括光轉換材料(譬如說含磷光轉換材料)130設置於LED 110上，且與LED 110隔著模塑材料120。在一些實施例中，光轉換材料130可設置於模塑材料120上並鄰接模塑材料120。在其他實施例中，光轉換材料130可包括磷及矽膠。磷對矽膠的比例約為1：1至5：1。
在一些實施例中，光轉換材料130的厚度(T)範圍介於約30微米至約100微米。由於光轉換材料130中的磷局限於其厚度(T)之內，在光轉換材料130中磷的分佈可依需求控制。在其他實施例中，光轉換材料130及LED 110間隔有預定距離(D)，其範圍約從0.3毫米至約1毫米。在另一些實施例中，光轉換材料130具有一尺寸(dimention)(W)，其大體上平行於基板101的表面101a。尺寸W的範圍可介於1.2毫米至約8.2毫米。在又一些實施例中，延著LED 110的一側邊的線，與由LED 110的角落延伸至光轉換材料130的角落的線，兩線間所夾的角度(θ)，其範圍介於約45°至約75°。在一些實施例中，角度(θ)可視為LED封裝系統100的分級圖案(bin pattern)。
在一些實施例中，光轉換材料130可設置於模塑材料120的開口121。光轉換材料130的表面130a大體上與模塑材料120的表面120a齊平。在其他實施例中，光轉換材料130的表面130a可高於或低於模塑材料120的表面120a。在另一些實施例中，在光轉換材料130上可設置透鏡(未顯示)。如第1圖所示，LED封裝系統不具有反射器的模塑結構。
第2圖為根據一實施例形成具有雙極性(bipolar)電晶體的積體電路的形成方法的流程圖。第3A至3D圖為在各製造階段積體電路的剖面圖。在第3A至3D圖中記憶體電路300的元件與第1圖中積體電路100相同或相似的元件可以相同的元件符號加200來表示。應了解為了更了解本發明的概念，第2、3A至3D圖已經過簡化。因此，應了解可提供額外的製程於第2、3A至3D圖所述方法之前、之間、或之後，且一些其他製程在此僅簡短敘述。
參照第2圖，方法200可包括在基板的表面上接合複數個LED(步驟210)。方法200可包括形成模塑材料覆蓋複數個LED(步驟220)。方法200可包括形成在各LED上形成光轉換材料(步驟230)。方法200也可包括切割(die sawing)基板以形成複數個LED封裝系統(步驟240)。
例如，方法200可包括在基板301的表面接合複數個LED310，如第3A圖所示。在一些實施例中，各LED310可接合至各導電結構311，且以導線連接導電結構313。
參照第2及3B圖，方法200可包括形成模塑材料320覆蓋LED310。在一些實施例中，形成模塑材料320可包括在模塑材料320中形成複數個開口321，各開口分別對應各LED310。在一些實施例中，形成模塑材料320可包括模塑製程。模塑製程可在相同製程中形成模塑材料320及開口321。藉由模塑製程，具有開口321的模塑材料320可輕易形成在LED310上並覆蓋LED310。方法200所形成LED封裝系統的方法較不複雜且降低製程成本。
參照第2圖，方法200可包括形成光轉換材料在各LED上(步驟230)。光轉換材料由模塑材料與各LED間隔。例如，步驟230可包括將光轉換材料325印刷至各開口321中，如第3C圖所示。藉由光轉換材料的印刷製程325，可在各開口321中形成光轉換材料330。由於印刷製程可輕易的在開口321中形成光轉換材料330，方法200可輕易的形成LED封裝體系統。在一些實施例中，光轉換材料330的表面330a大體上與模塑材料320的表面320a齊平，如第3D圖所示。在一些其他實施例中，光轉換材料330的表面330a高於或低於模塑材料320的表面320a。
在形成光轉換材料330之後，切割基板301及形成在其上的結構，如第2圖的步驟240。在一些實施例中，切割製程可包括鋸刀切割製程(blade sawing process)及/或雷射切割製程。
在本發明第一實施例中，發光二極體(LED)封裝系統包括設置在基板表面的LED。模塑材料覆蓋LED。光轉換材料設置在LED上且藉由模塑材料與LED間隔。
在本發明第二實施例中，形成LED封裝系統的方法包括在基板的表面上接合複數個LED。形成模塑材料覆蓋LED。在各LED上形成光轉換材料。光轉換材料藉由模塑材料與LED間隔。可切割基板以形成複數個LED封裝體系統。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100．．．LED封裝體系統
110、310．．．LED
101、301．．．基板
111、113、311、313．．．導電結構
115．．．導線
120、320．．．模塑材料
130、330．．．光轉換材料
101a、120a、130a、301a、320a、330a．．．表面
300．．．記憶體電路
200．．．方法
210、220、230、240．．．步驟
321．．．開口
325．．．印刷
第1圖係顯示在一實施例中包括發光二極體的封裝系統的剖面圖。
第2圖係在一實施例中包括雙極性(bipolar)電晶體的積體電路的形成方法的流程圖。
第3A-3D圖顯示在各製造階段的積體電路的剖面圖。
310．．．LED
301．．．基板
311、313．．．導電結構
320．．．模塑材料
330．．．光轉換材料
320a、330a．．．表面

Claims (14)

  1. 一種發光二極體封裝系統，包括：一發光二極體，設置在一基板的一表面上，其中該發光二極體沒有被一反射構件包圍；一模塑材料，覆蓋該發光二極體；以及一光轉換材料，設置在該發光二極體上，且藉由該模塑材料與該發光二極體間隔，其中該光轉換材料包括矽膠。
  2. 如申請專利範圍第1項所述之發光二極體封裝系統，其中該光轉換材料設置於該模塑材料的一開口，且該光轉換材料的一表面與該模塑材料的一表面大體上齊平。
  3. 如申請專利範圍第1項所述之發光二極體封裝系統，其中該光轉換材料包括磷及矽膠，磷對矽膠的比例約為1：1至約5：1。
  4. 如申請專利範圍第1項所述之發光二極體封裝系統，其中該光轉換材料與該發光二極體間隔約0.3毫米至約1毫米的預定距離範圍。
  5. 如申請專利範圍第4項所述之發光二極體封裝系統，其中該光轉換材料具有一尺寸大體平行於該基板的該表面，且該尺寸範圍介於約1.2毫米至約8.2毫米。
  6. 如申請專利範圍第1項所述之發光二極體封裝系統，其中該封裝體系統的一分級圖案(bin pattern) 範圍介於約45°至約75°。
  7. 一種發光二極體封裝系統的形成方法，包括：在一基板的一表面上接合複數個發光二極體；形成一模塑材料覆蓋該發光二極體，其中該模塑材料中不具有反射構件；在各個該發光二極體上形成一光轉換材料，其中該光轉換材料藉由該模塑材料與各個該發光二極體間隔；以及切割該基板以形成複數個發光二極體封裝系統，其中該光轉換材料包括矽膠。
  8. 如申請專利範圍第7項所述之發光二極體封裝系統的形成方法，其中該模塑材料的形成步驟包括在該模塑材料中形成複數個開口，且各個該開口對應至各個該發光二極體。
  9. 如申請專利範圍第8項所述之發光二極體封裝系統的形成方法，其中形成該光轉換材料的步驟包括將該光轉換材料印刷至各個該開口中，使得該光轉換材料的一表面大體上與該模塑材料的一表面齊平。
  10. 如申請專利範圍第7項所述之發光二極體封裝系統的形成方法，其中該光轉換材料包括磷及矽膠，磷對矽膠的比例約為1：1至約5：1。
  11. 一種發光二極體封裝系統，包括：複數個發光二極體，設置在一基板的一表面上； 一模塑材料，設置在該些發光二極體上並鄰接該些發光二極體，其中該含磷材料具有複數個開口，各開口對準該些發光二極體之一者，且該含磷材料中不具有反射構件；以及一含磷材料，設置在該模塑材料的各開口中，且該含磷材料的一表面與該模塑材料的一表面大體上齊平。
  12. 如申請專利範圍第11項所述之發光二極體封裝系統，其中該含磷材料包括磷及矽膠，磷對矽膠的比例約為1：1至約5：1。
  13. 如申請專利範圍第11項所述之發光二極體封裝系統，其中該含磷材料與該發光二極體間隔約0.3毫米至約1毫米的預定距離範圍。
  14. 如申請專利範圍第11項所述之發光二極體封裝系統，其中該封裝體系統的一分級圖案(bin pattern)範圍介於約45°至約75°。
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US20120241784A1 (en) 2012-09-27

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