KR100543729B1 - 열 방출 효율이 높고 두께는 물론 크기를 감소시킨 고주파모듈 패키지 및 그 조립 방법 - Google Patents
열 방출 효율이 높고 두께는 물론 크기를 감소시킨 고주파모듈 패키지 및 그 조립 방법 Download PDFInfo
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- KR100543729B1 KR100543729B1 KR1020040020075A KR20040020075A KR100543729B1 KR 100543729 B1 KR100543729 B1 KR 100543729B1 KR 1020040020075 A KR1020040020075 A KR 1020040020075A KR 20040020075 A KR20040020075 A KR 20040020075A KR 100543729 B1 KR100543729 B1 KR 100543729B1
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- H01L2924/19101—Disposition of discrete passive components
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- H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
Abstract
Description
Claims (24)
- 고주파 모듈 패키지에 있어서,그 중앙에 디프레션 영역을 갖는 리드 프레임;상기 리드 프레임의 디프레션 영역 상에 장착된 고주파 집적 회로(RF IC) 칩;상기 고주파 집적 회로 칩의 입/출력 패드들 상에 형성된 제1 범프들과 연결되는 제1 전극 패드들을 갖고, 상기 고주파 집적 회로 칩 상의 상기 제1 범프들에 상기 제1 전극 패드들이 접착되도록 패턴 형성부가 마주 보게 스택된 수동 소자(IPD) 칩;상기 고주파 집적 회로 칩과 상기 고주파 집적 회로 칩의 크기에 대응되는 상기 수동 소자 칩 사이에, 저탄성율의 접착제 또는 플라스틱제로 언더-필되는 제1 충진 공간;상기 수동 소자 칩의 접지 패드들과 상기 리드 프레임을 연결시키는 제2 범프들;상기 수동 소자 칩의 제2 전극 패드들과 상기 리드 프레임의 결합 핑거들을 연결시키는 제3 범프들; 및상기 고주파 모듈 패키지 내 상기 제1 충진 공간 이외의 영역에 에폭시 기저의 열경화성 물질로 채워진 제2 충진 공간을 구비하는 것을 특징으로 하는 고주파 모듈 패키지.
- 제1항에 있어서, 상기 고주파 모듈 패키지는상기 수동 소자 칩의 패턴 형성부 반대면의 접착제에 의해 상기 수동 소자 칩에 부착되어 상기 고주파 모듈 패키지의 열을 방출하는 히트 싱크 플레이트를 더 구비하는 것을 특징으로 하는 고주파 모듈 패키지.
- 제2항에 있어서, 상기 히트 싱크 플레이트는구리, 구리 합금, 철-니켈 합금, 알루미늄, 강철 및 인바르(invar)로 구성되는 그룹으로부터 선택되는 어느 하나의 재료로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 제1항에 있어서, 상기 고주파 모듈 패키지는상기 리드 프레임의 디프레션 영역과 상기 고주파 집적 회로 칩 사이에 은 또는 구리 페이스트를 구비하여 상기 고주파 집적 회로 칩을 장착시키는 것을 특징으로 하느 고주파 모듈 패키지.
- 제1항에 있어서, 상기 제1 내지 제3 범프들은스터드 범프, 솔더 범프 또는 일렉트로리스 범프 중에서 선택되는 어느 하나의 범프로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 제1항에 있어서, 상기 제1 내지 제3 범프들은금(Au) 또는 금 합금의 도전성 물질로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 고주파 모듈 패키지에 있어서,그 중앙에 디프레션 영역을 갖는 리드 프레임;상기 리드 프레임의 디프레션 영역 상에 장착된 고주파 집적 회로(RF IC) 칩;상기 고주파 집적 회로 칩의 입/출력 패드들 상에 형성된 범프들;상기 고주파 집적 회로 칩의 크기와 동일한 칩 크기를 갖고 상기 수동 소자 칩의 패턴 형성부 반대면이 상기 범프들 위에 스택된 수동 소자 칩;상기 수동 소자 칩의 기판을 뚫어 형성되고 상기 범프들과 접착되도록 금속으로 매립된 비아홀들;상기 고주파 집적 회로 칩과 상기 수동 소자 칩 사이에 저탄성율의 접착제 또는 플라스틱제로 언더-필되는 제1 충진 공간;상기 매립된 비아홀들과 접착되도록 상기 수동 소자 칩의 패턴 형성부 면에 형성된 전극 패드들;상기 전극 패드와 상기 리드 프레임의 결합 핑거들 사이에 연결되는 와이어 본딩; 및상기 고주파 모듈 패키지 내 상기 제1 충진 공간 이외의 영역에 에폭시 기저 의 열경화성 물질로 채워진 제2 충진 공간을 구비하는 것을 특징으로 하는 고주파 모듈 패키지.
- 제7항에 있어서, 상기 고주파 모듈 패키지는상기 리드 프레임의 디프레션 영역과 상기 고주파 집적 회로 칩 사이에 은 페이스트를 구비하여 상기 고주파 집적 회로 칩을 장착시키는 것을 특징으로 하느 고주파 모듈 패키지.
- 제7항에 있어서, 상기 범프들은스터드 범프, 솔더 범프 또는 일렉트로리스 범프 중에서 선택되는 어느 하나의 범프로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 제7항에 있어서, 상기 범프들은금(Au) 또는 금 합금의 도전성 물질로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 고주파 모듈 패키지에 있어서,그 중앙에 디프레션 영역을 갖는 리드 프레임;상기 리드 프레임의 디프레션 영역 상에 장착된 고주파 집적 회로(RF IC) 칩;상기 고주파 집적 회로 칩의 입/출력 패드들 상에 형성된 제1 범프들과 연결되는 제1 전극 패드들을 갖고, 상기 고주파 집적 회로 칩 상의 상기 제1 범프들에 상기 제1 전극 패드들이 접착되도록 패턴 형성부가 마주 보게 스택된 수동 소자(IPD) 칩;상기 고주파 집적 회로 칩과 상기 고주파 집적 회로 칩의 크기에 대응되는 상기 수동 소자 칩 사이에, 저탄성율의 접착제 또는 플라스틱제로 언더-필되는 제1 충진 공간;상기 수동 소자 칩의 접지 패드들과 상기 리드 프레임을 연결시키는 제2 범프들;상기 수동 소자 칩의 기판을 뚫어 형성되고 상기 제1 범프들과 접착되도록 금속으로 매립된 비아홀들;상기 매립된 비아홀들과 접착되도록 상기 수동 소자 칩의 패턴 형성부의 반대면에 형성된 제3 전극 패드들;상기 수동 소자 칩의 제3 전극 패드들과 상기 리드 프레임의 결합 핑거들을 연결시키는 와이어 본딩들; 및상기 고주파 모듈 패키지 내 상기 제1 충진 공간 이외의 영역에 에폭시 기저의 열경화성 물질로 채워진 제2 충진 공간을 구비하는 것을 특징으로 하는 고주파 모듈 패키지.
- 제11항에 있어서, 상기 고주파 모듈 패키지는상기 리드 프레임의 디프레션 영역과 상기 고주파 집적 회로 칩 사이에 은 페이스트를 구비하여 상기 고주파 집적 회로 칩을 장착시키는 것을 특징으로 하느 고주파 모듈 패키지.
- 제11항에 있어서, 상기 제1 내지 제3 범프들은스터드 범프, 솔더 범프 또는 일렉트로리스 범프 중에서 선택되는 어느 하나의 범프로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 제11항에 있어서, 상기 제1 내지 제3 범프들은금(Au) 또는 금 합금의 도전성 물질로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 고주파 모듈 패키지에 있어서,그 중앙에 디프레션 영역을 갖는 리드 프레임;상기 리드 프레임의 디프레션 영역 상에 장착된 고주파 집적 회로(RF IC) 칩;상기 고주파 집적 회로 칩의 입/출력 패드들 상에 형성된 제1 범프들과 연결되는 제1 전극 패드들을 갖고, 상기 고주파 집적 회로 칩 상의 상기 제1 범프들에 상기 제1 전극 패드들이 접착되도록 패턴 형성부가 마주 보게 스택된 수동 소자(IPD) 칩;상기 고주파 집적 회로 칩과 상기 고주파 집적 회로 칩의 크기에 대응되는 상기 수동 소자 칩 사이에, 저탄성율의 접착제 또는 플라스틱제로 언더-필되는 제1 충진 공간;상기 수동 소자 칩의 제2 전극 패드들과 상기 리드 프레임의 결합 핑거들을 연결시키는 제2 범프들; 및상기 고주파 모듈 패키지 내 상기 제1 충진 공간 이외의 영역에 에폭시 기저의 열경화성 물질로 채워진 제2 충진 공간을 구비하는 것을 특징으로 하는 고주파 모듈 패키지.
- 제15항에 있어서, 상기 고주파 모듈 패키지는상기 수동 소자 칩의 패턴 형성부 반대면의 접착제에 의해 상기 수동 소자 칩에 부착되어 상기 고주파 모듈 패키지의 열을 방출하는 히트 싱크 플레이트를 더 구비하는 것을 특징으로 하는 고주파 모듈 패키지.
- 제16항에 있어서, 상기 히트 싱크 플레이트는구리, 구리 합금, 철-니켈 합금, 알루미늄, 강철 및 인바르(invar)로 구성되는 그룹으로부터 선택되는 어느 하나의 재료로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 제15항에 있어서, 상기 고주파 모듈 패키지는상기 리드 프레임의 디프레션 영역과 상기 고주파 집적 회로 칩 사이에 은 페이스트를 구비하여 상기 고주파 집적 회로 칩을 장착시키는 것을 특징으로 하느 고주파 모듈 패키지.
- 제15항에 있어서, 상기 제1 및 제2 범프들은스터드 범프, 솔더 범프 또는 일렉트로리스 범프 중에서 선택되는 어느 하나의 범프로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 제15항에 있어서, 상기 제1 및 제2 범프들은금(Au) 또는 금 합금의 도전성 물질로 구성되는 것을 특징으로 하는 고주파 모듈 패키지.
- 고주파 집적 회로 칩과 상기 고주파 집적 회로 칩의 임피던스 매칭을 위한 수동 소자 칩을 장착하는 고주파 모듈 패키지의 조립 방법에 있어서,상기 고주파 집적 회로를 집적한 웨이퍼를 백 그라인딩하는 단계;상기 고주파 집적 회로 웨이퍼 상에, 상기 수동 소자 칩의 전극 패드와 연결될 상기 고주파 집적 회로의 입/출력 패드에 범프들을 형성하는 단계;상기 고주파 집적 회로 웨이퍼를 소잉하는 단계;상기 소잉된 고주파 집적 회로 칩을 솔더 페이스트를 이용하여 리드 프레임 상에 부착시키는 단계;상기 리드 프레임에 부착된 상기 고주파 집적 회로 칩을 열처리하여 상기 범프를 고형화시키는 단계;상기 고주파 집적 회로 칩 상에 수동 소자 칩을 부착하는 단계;상기 고주파 집적 회로 칩과 상기 수동 소자 칩 사이의 제1 충진 공간을 언더-필하는 단계;상기 수동 소자 칩의 패턴 형성부의 반대면에 히트 싱크 플레이트를 장착하는 단계; 및상기 고주파 모듈 패키지의 제1 충진 공간 이외의 제2 충진 공간을 에폭시 몰딩한 후 열처리하는 단계를 구비하는 것을 특징으로 하는 고주파 모듈 패키지 조립 방법.
- 제21항에 있어서, 상기 범프들은스터드 범프, 솔더 범프 또는 일렉트로리스 범프 중에서 선택되는 어느 하나의 범프로 구성되는 것을 특징으로 하는 고주파 모듈 패키지 조립 방법.
- 제21항에 있어서, 상기 범프들은금 또는 금 합금의 도전성 물질로 구성되는 것을 특징으로 하는 고주파 모듈 패키지 조립 방법.
- 제21항에 있어서, 상기 히트 싱크 플레이트는구리, 구리 합금, 철-니켈 합금, 알루미늄, 강철 및 인바르(invar)로 구성되는 그룹으로부터 선택되는 어느 하나의 재료로 구성되는 것을 특징으로 하는 고주파 모듈 패키지 조립 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040020075A KR100543729B1 (ko) | 2004-03-24 | 2004-03-24 | 열 방출 효율이 높고 두께는 물론 크기를 감소시킨 고주파모듈 패키지 및 그 조립 방법 |
US10/932,409 US8067824B2 (en) | 2004-03-24 | 2004-09-01 | Integrated circuit module package and assembly method thereof |
US10/933,912 US7132747B2 (en) | 2004-03-24 | 2004-09-01 | Multilayer integrated circuit for RF communication and method for assembly thereof |
US11/528,047 US7638364B2 (en) | 2004-03-24 | 2006-09-27 | Multilayer integrated circuit for RF communication and method for assembly thereof |
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KR20050095060A (ko) | 2005-09-29 |
US8067824B2 (en) | 2011-11-29 |
US20070170583A1 (en) | 2007-07-26 |
US20050212078A1 (en) | 2005-09-29 |
US20050212106A1 (en) | 2005-09-29 |
US7638364B2 (en) | 2009-12-29 |
US7132747B2 (en) | 2006-11-07 |
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