TW200501213A - Plasma processing apparatus - Google Patents

Plasma processing apparatus

Info

Publication number
TW200501213A
TW200501213A TW093114123A TW93114123A TW200501213A TW 200501213 A TW200501213 A TW 200501213A TW 093114123 A TW093114123 A TW 093114123A TW 93114123 A TW93114123 A TW 93114123A TW 200501213 A TW200501213 A TW 200501213A
Authority
TW
Taiwan
Prior art keywords
plasma
recessed portion
processing apparatus
disposed
processed object
Prior art date
Application number
TW093114123A
Other languages
English (en)
Chinese (zh)
Other versions
TWI325600B (enExample
Inventor
Hiroyuki Matsuura
Hitoshi Kato
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200501213A publication Critical patent/TW200501213A/zh
Application granted granted Critical
Publication of TWI325600B publication Critical patent/TWI325600B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW093114123A 2003-05-19 2004-05-19 Plasma processing apparatus TW200501213A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003141045A JP4329403B2 (ja) 2003-05-19 2003-05-19 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200501213A true TW200501213A (en) 2005-01-01
TWI325600B TWI325600B (enExample) 2010-06-01

Family

ID=33447429

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114123A TW200501213A (en) 2003-05-19 2004-05-19 Plasma processing apparatus

Country Status (7)

Country Link
US (1) US20070137572A1 (enExample)
EP (1) EP1638139A4 (enExample)
JP (1) JP4329403B2 (enExample)
KR (1) KR100856654B1 (enExample)
CN (1) CN100524641C (enExample)
TW (1) TW200501213A (enExample)
WO (1) WO2004102650A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412084B (zh) * 2005-10-11 2013-10-11 Tokyo Electron Ltd A substrate processing apparatus and a substrate processing method
TWI633572B (zh) * 2015-12-31 2018-08-21 大陸商中微半導體設備（上海）有限公司 Plasma processing device

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156065A (ja) * 1999-11-24 2001-06-08 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
JP4987219B2 (ja) * 2004-01-13 2012-07-25 三星電子株式会社 エッチング装置
JP4495470B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
JP4495471B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
JP4495472B2 (ja) * 2004-01-13 2010-07-07 三星電子株式会社 エッチング方法
JP4987220B2 (ja) * 2004-01-13 2012-07-25 三星電子株式会社 エッチング装置
US7129187B2 (en) 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
JP4506677B2 (ja) * 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4228150B2 (ja) * 2005-03-23 2009-02-25 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US7901743B2 (en) 2005-09-30 2011-03-08 Tokyo Electron Limited Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system
US8039049B2 (en) 2005-09-30 2011-10-18 Tokyo Electron Limited Treatment of low dielectric constant films using a batch processing system
US7405168B2 (en) 2005-09-30 2008-07-29 Tokyo Electron Limited Plural treatment step process for treating dielectric films
US7387968B2 (en) * 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process
KR100745130B1 (ko) * 2006-02-09 2007-08-01 삼성전자주식회사 박막 증착 장치 및 방법
US20070240644A1 (en) 2006-03-24 2007-10-18 Hiroyuki Matsuura Vertical plasma processing apparatus for semiconductor process
JP4245012B2 (ja) * 2006-07-13 2009-03-25 東京エレクトロン株式会社 処理装置及びこのクリーニング方法
JP4916257B2 (ja) * 2006-09-06 2012-04-11 東京エレクトロン株式会社 酸化膜の形成方法、酸化膜の形成装置及びプログラム
JP4793306B2 (ja) * 2007-03-30 2011-10-12 東京エレクトロン株式会社 プラズマ処理方法及び記憶媒体
JP5568212B2 (ja) * 2007-09-19 2014-08-06 株式会社日立国際電気 基板処理装置、そのコーティング方法、基板処理方法及び半導体デバイスの製造方法
JP4918453B2 (ja) * 2007-10-11 2012-04-18 東京エレクトロン株式会社 ガス供給装置及び薄膜形成装置
KR20090087190A (ko) * 2008-02-12 2009-08-17 삼성전자주식회사 반도체 제조설비 그를 이용한 반도체 제조방법
KR101046335B1 (ko) 2008-07-29 2011-07-05 피에스케이 주식회사 할로우 캐소드 플라즈마 발생방법 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리방법
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP5056735B2 (ja) 2008-12-02 2012-10-24 東京エレクトロン株式会社 成膜装置
JP5179658B2 (ja) * 2009-05-26 2013-04-10 シャープ株式会社 プラズマ処理装置およびそのクリーニング方法
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
TWI474365B (zh) * 2010-08-25 2015-02-21 Canon Anelva Corp And a method of manufacturing the plasma processing apparatus and apparatus
JP5247781B2 (ja) * 2010-09-07 2013-07-24 東京エレクトロン株式会社 シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
KR20120040433A (ko) * 2010-10-19 2012-04-27 삼성전자주식회사 가스 분출 장치 및 이를 이용한 태양 전지의 제조 방법
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
JP5821039B2 (ja) * 2011-11-07 2015-11-24 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
US8592328B2 (en) * 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
JP5993154B2 (ja) * 2012-01-20 2016-09-14 東京エレクトロン株式会社 パーティクル低減方法
KR102207992B1 (ko) 2012-10-23 2021-01-26 램 리써치 코포레이션 서브-포화된 원자층 증착 및 등각막 증착
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
DE102012024340A1 (de) * 2012-12-13 2014-06-18 Oerlikon Trading Ag, Trübbach Plasmaquelle
JP6113626B2 (ja) 2013-10-21 2017-04-12 東京エレクトロン株式会社 プラズマ処理装置
CN103695839B (zh) * 2013-12-07 2016-05-18 深圳市金凯新瑞光电有限公司 一种应用在镀膜设备中的离子源清洗装置
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
EP3189915B1 (en) * 2014-08-13 2020-12-23 National Institute of Advanced Industrial Science and Technology Sintering device for metal material
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9214333B1 (en) 2014-09-24 2015-12-15 Lam Research Corporation Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
CN108028193B (zh) * 2015-09-30 2022-04-22 东京毅力科创株式会社 基板处理装置和基板处理方法
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10629435B2 (en) 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10074543B2 (en) 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
WO2019169335A1 (en) 2018-03-02 2019-09-06 Lam Research Corporation Selective deposition using hydrolysis
JP6987021B2 (ja) * 2018-05-28 2021-12-22 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7494209B2 (ja) 2019-05-01 2024-06-03 ラム リサーチ コーポレーション 調整された原子層堆積
WO2020247977A1 (en) 2019-06-04 2020-12-10 Lam Research Corporation Polymerization protective liner for reactive ion etch in patterning
CN114245832B (zh) 2019-06-07 2025-10-28 朗姆研究公司 原子层沉积期间的膜特性的原位控制
US12157945B2 (en) 2019-08-06 2024-12-03 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus
KR102371771B1 (ko) * 2020-06-02 2022-03-07 주식회사 한화 배치 타입 보트 장치
KR102371772B1 (ko) * 2020-06-02 2022-03-07 주식회사 한화 기판의 양면 처리 장치
JP7455013B2 (ja) * 2020-07-10 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7433154B2 (ja) * 2020-07-16 2024-02-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
KR102442458B1 (ko) * 2020-12-14 2022-09-14 주식회사 한화 복수 전극 전기 인가 장치
JP2024524553A (ja) 2021-07-09 2024-07-05 ラム リサーチ コーポレーション ケイ素含有膜のプラズマ強化原子層堆積
JP2024007904A (ja) 2022-07-06 2024-01-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2025077778A (ja) 2023-11-07 2025-05-19 東京エレクトロン株式会社 プラズマ処理装置
JP2025077770A (ja) 2023-11-07 2025-05-19 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62159433A (ja) 1986-01-08 1987-07-15 Hitachi Ltd レジスト除去方法及び装置
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
JPH05251391A (ja) * 1992-03-04 1993-09-28 Tokyo Electron Tohoku Kk 半導体ウエハーのプラズマ処理装置
US5383984A (en) * 1992-06-17 1995-01-24 Tokyo Electron Limited Plasma processing apparatus etching tunnel-type
JPH06272035A (ja) * 1993-03-16 1994-09-27 Nippon Steel Corp プラズマ処理装置
US6352593B1 (en) * 1997-08-11 2002-03-05 Torrex Equipment Corp. Mini-batch process chamber
JP2001284307A (ja) * 2000-03-29 2001-10-12 Ftl:Kk 半導体の表面処理方法
JP3979849B2 (ja) * 2001-01-11 2007-09-19 株式会社日立国際電気 プラズマ処理装置および半導体装置の製造方法
JP3954833B2 (ja) * 2001-10-19 2007-08-08 株式会社アルバック バッチ式真空処理装置
JP3957549B2 (ja) * 2002-04-05 2007-08-15 株式会社日立国際電気 基板処埋装置
JP2004039795A (ja) * 2002-07-02 2004-02-05 Hitachi Kokusai Electric Inc 基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412084B (zh) * 2005-10-11 2013-10-11 Tokyo Electron Ltd A substrate processing apparatus and a substrate processing method
TWI633572B (zh) * 2015-12-31 2018-08-21 大陸商中微半導體設備（上海）有限公司 Plasma processing device

Also Published As

Publication number Publication date
CN1791972A (zh) 2006-06-21
CN100524641C (zh) 2009-08-05
EP1638139A4 (en) 2008-09-17
JP4329403B2 (ja) 2009-09-09
JP2004343017A (ja) 2004-12-02
US20070137572A1 (en) 2007-06-21
KR100856654B1 (ko) 2008-09-04
KR20060007375A (ko) 2006-01-24
WO2004102650A1 (ja) 2004-11-25
EP1638139A1 (en) 2006-03-22
TWI325600B (enExample) 2010-06-01

Similar Documents

Publication Publication Date Title
TW200501213A (en) Plasma processing apparatus
EA200701008A1 (ru) Плазменная система
AU2002211886A1 (en) Stepped upper electrode for plasma processing uniformity
TWI267137B (en) Plasma treatment system
WO2004030013A8 (en) Baffle plate in a plasma processing system
TW200644117A (en) Plasma processing apparatus and plasma processing method
AU2003229730A1 (en) An atmospheric pressure plasma assembly
WO2006026110A3 (en) Yttria insulator ring for use inside a plasma chamber
WO2002071438A3 (en) Capillary discharge plasma apparatus and method for surface treatment using the same
WO2006071556A3 (en) Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
IL165179A0 (en) Electrode for electric discharge surface treatment, method of electric discharge surface treatment, and apparatus for electric discharge surface treatment
WO2009151009A3 (ja) プラズマ処理装置
WO2012073142A3 (de) Verfahren und vorrichtung zur ionenimplantation
WO2003071004A3 (fr) Procede de nettoyage par plasma de la surface d’un materiau enduit d’une substance organique, et installation de mise en oeuvre
JP2012049376A5 (enExample)
TW200501266A (en) Substrate processing apparatus
TW200741856A (en) Plasma processing equipment
SG147395A1 (en) METHODS TO ELIMINATE ôM-SHAPEö ETCH RATE PROFILE IN INDUCTIVELY COUPLED PLASMA REACTOR
WO2007075344A3 (en) Technique for providing an inductively coupled radio frequency plasma flood gun
WO2008149741A1 (ja) プラズマ処理装置のドライクリーニング方法
JP2003264169A5 (enExample)
EP1748465A3 (en) Plasma etching apparatus
TW200701361A (en) Plasma processing apparatus
TW200735726A (en) Plasma gun and plasma gun film forming apparatus provided with the same
PL1794856T3 (pl) Lampy wyładowań koronowych

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees