WO2009151009A3 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
WO2009151009A3
WO2009151009A3 PCT/JP2009/060345 JP2009060345W WO2009151009A3 WO 2009151009 A3 WO2009151009 A3 WO 2009151009A3 JP 2009060345 W JP2009060345 W JP 2009060345W WO 2009151009 A3 WO2009151009 A3 WO 2009151009A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing chamber
underside
interior
cover
dielectric bodies
Prior art date
Application number
PCT/JP2009/060345
Other languages
English (en)
French (fr)
Other versions
WO2009151009A2 (ja
Inventor
平山　昌樹
大見　忠弘
Original Assignee
東京エレクトロン株式会社
国立大学法人東北大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社, 国立大学法人東北大学 filed Critical 東京エレクトロン株式会社
Priority to DE112009001420T priority Critical patent/DE112009001420T5/de
Priority to KR1020107025683A priority patent/KR101183047B1/ko
Priority to CN2009801212847A priority patent/CN102057761A/zh
Priority to US12/997,122 priority patent/US20110146910A1/en
Publication of WO2009151009A2 publication Critical patent/WO2009151009A2/ja
Publication of WO2009151009A3 publication Critical patent/WO2009151009A3/ja

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

【課題】基板に対する処理の均一性をより向上させることを目的としている。 【解決手段】プラズマ処理される基板Ｇを収納する金属製の処理容器４と、処理容器４内にプラズマを励起させるために必要な電磁波を供給する電磁波源８５とを備え、電磁波源８５から供給される電磁波を処理容器８５の内部に透過させる、処理容器４の内部に一部を露出させた複数の誘電体２５を、処理容器４の蓋体３下面に備えたプラズマ処理装置であって、誘電体２５の下面に、蓋体３と電気的に接続された金属電極２７が設けられ、金属電極２７と蓋体３下面の間に露出する誘電体２５の部分が、処理容器４の内部から見て実質的に多角形の輪郭をなし、複数の誘電体２５は、多角形の輪郭の頂角同士を隣接させて配置され、処理容器４の内部に露出した蓋体３下面と金属電極２７下面に、電磁波を伝搬させる表面波伝搬部が設けられている。
PCT/JP2009/060345 2008-06-11 2009-06-05 プラズマ処理装置 WO2009151009A2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112009001420T DE112009001420T5 (de) 2008-06-11 2009-06-05 Plasma-Prozess-Vorrichtung
KR1020107025683A KR101183047B1 (ko) 2008-06-11 2009-06-05 플라즈마 처리 장치
CN2009801212847A CN102057761A (zh) 2008-06-11 2009-06-05 等离子体处理装置
US12/997,122 US20110146910A1 (en) 2008-06-11 2009-06-05 Plasma processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-153324 2008-06-11
JP2008153324A JP5213530B2 (ja) 2008-06-11 2008-06-11 プラズマ処理装置

Publications (2)

Publication Number Publication Date
WO2009151009A2 WO2009151009A2 (ja) 2009-12-17
WO2009151009A3 true WO2009151009A3 (ja) 2010-01-28

Family

ID=41417206

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/060345 WO2009151009A2 (ja) 2008-06-11 2009-06-05 プラズマ処理装置

Country Status (7)

Country Link
US (1) US20110146910A1 (ja)
JP (1) JP5213530B2 (ja)
KR (1) KR101183047B1 (ja)
CN (1) CN102057761A (ja)
DE (1) DE112009001420T5 (ja)
TW (1) TW201012313A (ja)
WO (1) WO2009151009A2 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP5478058B2 (ja) * 2008-12-09 2014-04-23 国立大学法人東北大学 プラズマ処理装置
KR101148082B1 (ko) 2010-11-15 2012-05-24 한국표준과학연구원 플라즈마 발생 장치 및 플라즈마 발생 방법
KR101184298B1 (ko) 2010-12-31 2012-09-21 (주)엘오티베큠 플라즈마 반응기
JP2012216525A (ja) * 2011-03-31 2012-11-08 Tokyo Electron Ltd プラズマ処理装置及びプラズマ発生用アンテナ
JP5497704B2 (ja) * 2011-08-05 2014-05-21 三井造船株式会社 成膜装置及び成膜方法
CN102970812A (zh) * 2011-09-01 2013-03-13 亚树科技股份有限公司 改善电浆均匀性的方法
JP5843602B2 (ja) * 2011-12-22 2016-01-13 キヤノンアネルバ株式会社 プラズマ処理装置
JP5916467B2 (ja) * 2012-03-27 2016-05-11 東京エレクトロン株式会社 マイクロ波放射アンテナ、マイクロ波プラズマ源およびプラズマ処理装置
US9267205B1 (en) * 2012-05-30 2016-02-23 Alta Devices, Inc. Fastener system for supporting a liner plate in a gas showerhead reactor
JP6228400B2 (ja) * 2013-07-16 2017-11-08 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP6383674B2 (ja) * 2014-02-19 2018-08-29 東京エレクトロン株式会社 基板処理装置
KR101681182B1 (ko) * 2014-06-30 2016-12-02 세메스 주식회사 기판 처리 장치
CN109755088B (zh) * 2017-11-06 2021-04-09 北京北方华创微电子装备有限公司 表面波等离子体设备
JP7153574B2 (ja) * 2019-01-17 2022-10-14 東京エレクトロン株式会社 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法
JP7300957B2 (ja) * 2019-10-08 2023-06-30 東京エレクトロン株式会社 プラズマ処理装置及び天壁

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10158847A (ja) * 1996-12-06 1998-06-16 Toshiba Corp マイクロ波励起によるプラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP2005019508A (ja) * 2003-06-24 2005-01-20 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法

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US5342472A (en) * 1991-08-12 1994-08-30 Tokyo Electron Limited Plasma processing apparatus
US5645644A (en) * 1995-10-20 1997-07-08 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
TW312815B (ja) * 1995-12-15 1997-08-11 Hitachi Ltd
US5803975A (en) * 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
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JP3668079B2 (ja) * 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
JP3650025B2 (ja) * 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
JP4402860B2 (ja) 2001-03-28 2010-01-20 忠弘 大見 プラズマ処理装置
US20030168012A1 (en) * 2002-03-07 2003-09-11 Hitoshi Tamura Plasma processing device and plasma processing method
JP4020679B2 (ja) * 2002-04-09 2007-12-12 シャープ株式会社 プラズマプロセス装置
JP2004186303A (ja) * 2002-12-02 2004-07-02 Tokyo Electron Ltd プラズマ処理装置
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KR101096950B1 (ko) * 2004-03-19 2011-12-20 샤프 가부시키가이샤 플라즈마 처리장치 및 플라즈마 처리방법
JP5013393B2 (ja) * 2005-03-30 2012-08-29 東京エレクトロン株式会社 プラズマ処理装置と方法
DE102006037144B4 (de) * 2006-08-09 2010-05-20 Roth & Rau Ag ECR-Plasmaquelle

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10158847A (ja) * 1996-12-06 1998-06-16 Toshiba Corp マイクロ波励起によるプラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP2005019508A (ja) * 2003-06-24 2005-01-20 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法

Also Published As

Publication number Publication date
JP2009301802A (ja) 2009-12-24
TW201012313A (en) 2010-03-16
WO2009151009A2 (ja) 2009-12-17
KR101183047B1 (ko) 2012-09-20
KR20100133015A (ko) 2010-12-20
DE112009001420T5 (de) 2011-04-28
JP5213530B2 (ja) 2013-06-19
US20110146910A1 (en) 2011-06-23
CN102057761A (zh) 2011-05-11

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