AU2002211886A1 - Stepped upper electrode for plasma processing uniformity - Google Patents

Stepped upper electrode for plasma processing uniformity

Info

Publication number
AU2002211886A1
AU2002211886A1 AU2002211886A AU1188602A AU2002211886A1 AU 2002211886 A1 AU2002211886 A1 AU 2002211886A1 AU 2002211886 A AU2002211886 A AU 2002211886A AU 1188602 A AU1188602 A AU 1188602A AU 2002211886 A1 AU2002211886 A1 AU 2002211886A1
Authority
AU
Australia
Prior art keywords
electrode
plasma
upper electrode
plasma processing
processing uniformity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002211886A
Inventor
Rajinder Dhindsa
Aaron Eppler
Eric Lenz
Mukund Srinivasan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2002211886A1 publication Critical patent/AU2002211886A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Abstract

A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
AU2002211886A 2000-10-13 2001-10-10 Stepped upper electrode for plasma processing uniformity Abandoned AU2002211886A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/689,845 2000-10-13
US09/689,845 US6391787B1 (en) 2000-10-13 2000-10-13 Stepped upper electrode for plasma processing uniformity
PCT/US2001/042611 WO2002031859A2 (en) 2000-10-13 2001-10-10 Stepped upper electrode for plasma processing uniformity

Publications (1)

Publication Number Publication Date
AU2002211886A1 true AU2002211886A1 (en) 2002-04-22

Family

ID=24770099

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002211886A Abandoned AU2002211886A1 (en) 2000-10-13 2001-10-10 Stepped upper electrode for plasma processing uniformity

Country Status (10)

Country Link
US (2) US6391787B1 (en)
EP (1) EP1336191B1 (en)
JP (1) JP4180913B2 (en)
KR (3) KR101028385B1 (en)
CN (2) CN100437930C (en)
AT (1) ATE453206T1 (en)
AU (1) AU2002211886A1 (en)
DE (1) DE60140893D1 (en)
TW (1) TW516123B (en)
WO (1) WO2002031859A2 (en)

Families Citing this family (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
KR100397891B1 (en) * 2001-07-25 2003-09-19 삼성전자주식회사 chuck assembly of etching equipment for fabricating semiconductor device
WO2003025982A1 (en) * 2001-09-17 2003-03-27 Advion Biosciences, Inc. Uniform patterning for deep reactive ion etching
JP2003100713A (en) * 2001-09-26 2003-04-04 Kawasaki Microelectronics Kk Cover for plasma electrode
TW200626020A (en) * 2001-12-13 2006-07-16 Tokyo Electron Ltd Ring mechanism, and plasma processor using the ring mechanism
US6846747B2 (en) 2002-04-09 2005-01-25 Unaxis Usa Inc. Method for etching vias
US6846726B2 (en) * 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
KR101075046B1 (en) * 2002-05-23 2011-10-19 램 리써치 코포레이션 Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US6838012B2 (en) 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
KR100657054B1 (en) * 2003-01-07 2006-12-13 동경 엘렉트론 주식회사 Plasma processing apparatus and focus ring
JP4472372B2 (en) * 2003-02-03 2010-06-02 株式会社オクテック Plasma processing apparatus and electrode plate for plasma processing apparatus
JP4286025B2 (en) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 Method of reclaiming quartz jig, method of reusing and using semiconductor device
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
JP4563729B2 (en) * 2003-09-04 2010-10-13 東京エレクトロン株式会社 Plasma processing equipment
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
US7267741B2 (en) * 2003-11-14 2007-09-11 Lam Research Corporation Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon
US20050130620A1 (en) * 2003-12-16 2005-06-16 Andreas Fischer Segmented radio frequency electrode apparatus and method for uniformity control
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP2005217240A (en) * 2004-01-30 2005-08-11 Matsushita Electric Ind Co Ltd Dry etching apparatus and method therefor
US20050193951A1 (en) * 2004-03-08 2005-09-08 Muneo Furuse Plasma processing apparatus
JP4647228B2 (en) * 2004-04-01 2011-03-09 株式会社ディスコ Wafer processing method
KR20060014495A (en) * 2004-08-11 2006-02-16 주식회사 유진테크 Shower head of chemical vapor deposition apparatus
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US20060051965A1 (en) * 2004-09-07 2006-03-09 Lam Research Corporation Methods of etching photoresist on substrates
US7728823B2 (en) * 2004-09-24 2010-06-01 Apple Inc. System and method for processing raw data of track pad device
US7601246B2 (en) * 2004-09-29 2009-10-13 Lam Research Corporation Methods of sputtering a protective coating on a semiconductor substrate
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7767055B2 (en) * 2004-12-03 2010-08-03 Tokyo Electron Limited Capacitive coupling plasma processing apparatus
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
FR2884044A1 (en) * 2005-04-01 2006-10-06 St Microelectronics Sa Reactor for the deposition of an oxide layer on a platelet, notably for the deposition of tantalum pentoxide during the fabrication of integrated circuits
US7713379B2 (en) 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US8679252B2 (en) * 2005-09-23 2014-03-25 Lam Research Corporation Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof
US8789493B2 (en) 2006-02-13 2014-07-29 Lam Research Corporation Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
US20070202701A1 (en) * 2006-02-27 2007-08-30 Tokyo Electron Limited Plasma etching apparatus and method
US8635971B2 (en) * 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US20080006205A1 (en) * 2006-07-10 2008-01-10 Douglas Keil Apparatus and Method for Controlling Plasma Potential
US7837826B2 (en) * 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
US7563633B2 (en) * 2006-08-25 2009-07-21 Robert Bosch Gmbh Microelectromechanical systems encapsulation process
US20080066868A1 (en) * 2006-09-19 2008-03-20 Tokyo Electron Limited Focus ring and plasma processing apparatus
US7875824B2 (en) * 2006-10-16 2011-01-25 Lam Research Corporation Quartz guard ring centering features
US7482550B2 (en) * 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
KR100769522B1 (en) * 2006-10-25 2007-11-06 주식회사 유진테크 Shower head of chemical vapor deposition apparatus
US20080194112A1 (en) * 2007-02-09 2008-08-14 International Business Machines Corporation Method and system for plasma etching having improved across-wafer etch uniformity
US20080296261A1 (en) * 2007-06-01 2008-12-04 Nordson Corporation Apparatus and methods for improving treatment uniformity in a plasma process
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US7837827B2 (en) * 2007-06-28 2010-11-23 Lam Research Corporation Edge ring arrangements for substrate processing
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US8197636B2 (en) * 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
CN102543798A (en) * 2007-07-12 2012-07-04 应用材料公司 Apparatus and method for centering a substrate in a process chamber
US8152954B2 (en) * 2007-10-12 2012-04-10 Lam Research Corporation Showerhead electrode assemblies and plasma processing chambers incorporating the same
US8187414B2 (en) * 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
TWI516175B (en) * 2008-02-08 2016-01-01 蘭姆研究公司 A method to stabilize pressure in a plasma processing chamber, and a program storage medium of same
TWI501704B (en) * 2008-02-08 2015-09-21 Lam Res Corp Methods and apparatus for changing area ratio in a plasma processing system
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US8679288B2 (en) 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8221582B2 (en) * 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8161906B2 (en) * 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8449679B2 (en) 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
KR101573962B1 (en) * 2008-08-19 2015-12-02 램 리써치 코포레이션 Edge rings for electrostatic chucks
US8382941B2 (en) 2008-09-15 2013-02-26 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods
JP5635001B2 (en) * 2008-09-26 2014-12-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Thermal contact between electrostatic chuck and hot edge ring adjustable by clocking the coupling ring
US9493875B2 (en) 2008-09-30 2016-11-15 Eugene Technology Co., Ltd. Shower head unit and chemical vapor deposition apparatus
WO2010062345A2 (en) * 2008-10-31 2010-06-03 Lam Research Corporation Lower electrode assembly of plasma processing chamber
CN101740298B (en) 2008-11-07 2012-07-25 东京毅力科创株式会社 Plasma processing apparatus and constituent part thereof
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8253058B2 (en) * 2009-03-19 2012-08-28 Integrated Photovoltaics, Incorporated Hybrid nozzle for plasma spraying silicon
US8313612B2 (en) 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
US8402918B2 (en) * 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8538572B2 (en) 2009-06-30 2013-09-17 Lam Research Corporation Methods for constructing an optimal endpoint algorithm
US8618807B2 (en) 2009-06-30 2013-12-31 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
CN102804929B (en) * 2009-06-30 2015-11-25 朗姆研究公司 For the treatment of the method and apparatus of the predictability preventive maintenance of room
US8473089B2 (en) 2009-06-30 2013-06-25 Lam Research Corporation Methods and apparatus for predictive preventive maintenance of processing chambers
US8983631B2 (en) 2009-06-30 2015-03-17 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8271121B2 (en) * 2009-06-30 2012-09-18 Lam Research Corporation Methods and arrangements for in-situ process monitoring and control for plasma processing tools
US8295966B2 (en) * 2009-06-30 2012-10-23 Lam Research Corporation Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
SG169960A1 (en) * 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
KR200464037Y1 (en) 2009-10-13 2012-12-07 램 리써치 코포레이션 - edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly
DE202010015933U1 (en) 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont An edge ring arrangement for plasma etching chambers
US8249900B2 (en) * 2010-02-10 2012-08-21 Morgan Stanley & Co. Llc System and method for termination of pension plan through mutual annuitization
US20110206833A1 (en) * 2010-02-22 2011-08-25 Lam Research Corporation Extension electrode of plasma bevel etching apparatus and method of manufacture thereof
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US8826855B2 (en) 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US9171702B2 (en) 2010-06-30 2015-10-27 Lam Research Corporation Consumable isolation ring for movable substrate support assembly of a plasma processing chamber
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US20120083129A1 (en) 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
US8357263B2 (en) * 2010-10-05 2013-01-22 Skyworks Solutions, Inc. Apparatus and methods for electrical measurements in a plasma etcher
US9478428B2 (en) 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
US20120135609A1 (en) * 2010-11-30 2012-05-31 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
US20130122711A1 (en) * 2011-11-10 2013-05-16 Alexei Marakhtanov System, method and apparatus for plasma sheath voltage control
JP5912637B2 (en) * 2012-02-17 2016-04-27 東京エレクトロン株式会社 Manufacturing method of semiconductor device
EP2654070A1 (en) 2012-04-16 2013-10-23 INDEOtec SA Capacitively coupled plasma reactor for thin film deposition
US9252002B2 (en) 2012-07-17 2016-02-02 Applied Materials, Inc. Two piece shutter disk assembly for a substrate process chamber
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
JP5798140B2 (en) * 2013-02-15 2015-10-21 株式会社東芝 Plasma processing equipment
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
US10804081B2 (en) 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
US9393666B2 (en) 2013-12-20 2016-07-19 Lam Research Corporation Adapter plate for polishing and cleaning electrodes
JP2015162558A (en) 2014-02-27 2015-09-07 東京エレクトロン株式会社 Plasma processing device, and method of processing workpiece
KR101640488B1 (en) * 2014-09-16 2016-07-25 주식회사 월덱스 Combined structure of electronica de coupling device and method for etching Plasmacluster
US10115573B2 (en) * 2014-10-14 2018-10-30 Applied Materials, Inc. Apparatus for high compressive stress film deposition to improve kit life
CN105185732A (en) * 2015-08-24 2015-12-23 沈阳拓荆科技有限公司 Ceramic ring capable of changing shape and appearance of surface film of wafer
US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
WO2017131927A1 (en) 2016-01-26 2017-08-03 Applied Materials, Inc. Wafer edge ring lifting solution
US11227748B2 (en) 2016-03-03 2022-01-18 Core Technology, Inc. Plasma treatment device and structure of reaction vessel for plasma treatment
US9852889B1 (en) 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US10163642B2 (en) * 2016-06-30 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method and tool of manufacture
KR102652258B1 (en) * 2016-07-12 2024-03-28 에이비엠 주식회사 Metal component and manufacturing method thereof and process chamber having the metal component
US10032661B2 (en) 2016-11-18 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
CN109961999B (en) * 2017-12-22 2021-03-23 中微半导体设备(上海)股份有限公司 Gas spray header and method for preventing polymer accumulation
US20190244793A1 (en) * 2018-02-05 2019-08-08 Lam Research Corporation Tapered upper electrode for uniformity control in plasma processing
JP7404268B2 (en) 2018-04-18 2023-12-25 アプライド マテリアルズ インコーポレイテッド Two-piece shutter disc assembly with self-centering features
WO2019221972A1 (en) 2018-05-12 2019-11-21 Applied Materials, Inc. Pre-clean chamber with integrated shutter garage
US10790123B2 (en) 2018-05-28 2020-09-29 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
US11101115B2 (en) 2019-04-19 2021-08-24 Applied Materials, Inc. Ring removal from processing chamber
KR20200131432A (en) 2019-05-14 2020-11-24 삼성전자주식회사 Shower head assembly and plasma processing apparatus having the same
KR20220040804A (en) 2020-09-24 2022-03-31 삼성전자주식회사 Plasma processing apparatus and plasma processing method
JP2022068583A (en) 2020-10-22 2022-05-10 東京エレクトロン株式会社 Plasma processing apparatus
KR102580583B1 (en) * 2021-08-10 2023-09-21 피에스케이 주식회사 Substrate processing apparatus
WO2023043091A1 (en) * 2021-09-14 2023-03-23 주식회사 티이엠 Assembly-type profile upper electrode and plasma processing apparatus including same
KR102617128B1 (en) * 2021-09-14 2023-12-27 주식회사 케이씨파츠텍 Modular profiled upper electrode and plasma processing apparatus therewith
WO2023154115A1 (en) * 2022-02-09 2023-08-17 Lam Research Corporation Etch uniformity improvement in radical etch using confinement ring

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4230515A (en) 1978-07-27 1980-10-28 Davis & Wilder, Inc. Plasma etching apparatus
US4297162A (en) 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4792379A (en) * 1984-04-18 1988-12-20 Long Mile Rubber Company Apparatus for recapping a tire with a flexible segmented mold
US4610774A (en) 1984-11-14 1986-09-09 Hitachi, Ltd. Target for sputtering
DE3606959A1 (en) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg DEVICE FOR PLASMA TREATMENT OF SUBSTRATES IN A PLASMA DISCHARGE EXCITED BY HIGH FREQUENCY
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US4820371A (en) 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
DE4011933C2 (en) 1990-04-12 1996-11-21 Balzers Hochvakuum Process for the reactive surface treatment of a workpiece and treatment chamber therefor
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JPH0529275A (en) * 1991-07-23 1993-02-05 Kokusai Electric Co Ltd Plasma etching method and device
US5273588A (en) 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
KR100276093B1 (en) 1992-10-19 2000-12-15 히가시 데쓰로 Plasma etching system
US5298103A (en) * 1993-07-15 1994-03-29 Hughes Aircraft Company Electrode assembly useful in confined plasma assisted chemical etching
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
US5472565A (en) 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
TW357404B (en) * 1993-12-24 1999-05-01 Tokyo Electron Ltd Apparatus and method for processing of plasma
TW299559B (en) * 1994-04-20 1997-03-01 Tokyo Electron Co Ltd
JP3210207B2 (en) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 Plasma processing equipment
US5522934A (en) 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5628869A (en) 1994-05-09 1997-05-13 Lsi Logic Corporation Plasma enhanced chemical vapor reactor with shaped electrodes
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US5746875A (en) 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5643394A (en) 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5716485A (en) 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
US6010636A (en) 1995-12-29 2000-01-04 Lam Research Corporation Electrode with domes for plasma focusing
JPH09306896A (en) * 1996-03-15 1997-11-28 Sumitomo Metal Ind Ltd Plasma processor and plasma processing method
JPH1064831A (en) 1996-08-20 1998-03-06 Fujitsu Ltd Chemical vapor deposition apparatus
KR100252210B1 (en) 1996-12-24 2000-04-15 윤종용 Dry etching facility for manufacturing semiconductor devices
US6073577A (en) 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6350317B1 (en) * 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity

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