CN105185732A - Ceramic ring capable of changing shape and appearance of surface film of wafer - Google Patents
Ceramic ring capable of changing shape and appearance of surface film of wafer Download PDFInfo
- Publication number
- CN105185732A CN105185732A CN201510524095.1A CN201510524095A CN105185732A CN 105185732 A CN105185732 A CN 105185732A CN 201510524095 A CN201510524095 A CN 201510524095A CN 105185732 A CN105185732 A CN 105185732A
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- China
- Prior art keywords
- ceramic ring
- wafer
- edge
- surface film
- film
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a ceramic ring which can change the shape and appearance of a surface film of a wafer in a semiconductor plasma processing device. The ceramic ring is located on an objective table, and is used for bearing a to-be-machined wafer. An edge, supporting the step of the wafer, of the ceramic ring is at a right angle, and the height d1 of the step can be set differently. When a plasma air flow passes through the edge of the step, the height of the step exerts impact on the flowing of the air flow in a high-temperature process, thereby impacting the uniformity of a film layer. The ceramic ring can effectively adjust the air flow distribution at the step of the ceramic ring and the edge of the wafer, thereby impacting the uniformity of plasma distribution, and improving the growth condition of the edge film of the wafer. The ceramic ring is reasonable in structure, is practical and is easy to implement. The ceramic ring can be widely used in the technical field of semiconductor film deposition.
Description
Technical field
The present invention relates to a kind of wafer carrying ceramic ring of semiconductor coated film equipment, to be mainly used in semiconductor coated film device reaction cavity in normal temperature or elevated temperature processes, belong to the applied technical field of semiconductive thin film deposition.
Background technology
Existing plasma processing apparatus, the circular groove size of wafer carrying ceramic ring used is fixed, and in technical process, because gas transport direction is for be transported to the periphery by objective table center, takes away from the ceramic ring of bleeding around objective table.In the process, the step part of supporting wafer, higher than wafer, can affect the flowing of crystal round fringes air-flow, easily causes distribution of gas herein to change, thus causes plasma distribution to change.In above-mentioned plasma situation pockety, being embodied in the plasma treatment procedure of semiconductor is exactly impact on wafer deposited film thickness, can affect pattern and the uniformity of crystal column surface institute deposit thin film layers.
At present, along with the development of semiconductor technology, the requirement of film performance is improved constantly.Therefore, improve the uniformity of plasma process processing procedure, surface topography and the uniformity of improving thin layer are most important.The ceramic ring designed in the present invention can adjust it under the prerequisite not changing cavity body structure and other hardware.
Summary of the invention
The present invention is for the purpose of solving the problems of the technologies described above, and provides in a kind of semiconductor plasma treatment process processing procedure, can change the ceramic ring of crystal column surface film morphology.
For achieving the above object, the present invention adopts following technical proposals: a kind of ceramic ring changing crystal column surface film morphology, and the cylindrical of described ceramic ring 1 is shaped with the step 4 of support wafer 3; Gap 2 is had between the edge of above-mentioned wafer 3 and ceramic ring 1.
Described ceramic ring 1 is positioned on objective table 5, for the carrying of wafer to be processed, it is characterized in that: the height d of the step 4 of support wafer 3
1can adjust, the step of ceramic ring 14 and the surperficial relative altitude of wafer 3 change and can affect crystal round fringes air-flow and plasma distributes, thus improve the processing quality of crystal round fringes.
Further, described ceramic ring, is characterized in that: the step 4 of support wafer 3 is right angle.
Further, described ceramic ring, is characterized in that: the gap 2 between the step 4 of support wafer 3 and wafer 3 is fixed.
The present invention is in elevated temperature processes, and when plasma flow is by recess edge, the flowing of depth of groove to air-flow has an impact, thus affects the uniformity of rete.
Beneficial effect of the present invention and feature are:
The present invention effectively can adjust the air flow method at ceramic ring step and crystal round fringes place, thus affects the uniformity of plasma distribution, improves crystal round fringes film growth situation.Have rational in infrastructure, practical and be easy to the feature that realizes.Can be widely used in the technical field of semiconductive thin film deposition.
Accompanying drawing explanation
Fig. 1 is structure of the present invention and application schematic diagram.
Fig. 2 is the deposition conditions contrast of the embodiment of the present invention 1 different ceramic ring step depth under same process formula.
Fig. 3 is the deposition conditions contrast of the embodiment of the present invention 2 different ceramic ring step depth under same process formula.
Below in conjunction with the drawings and specific embodiments, the present invention is described in further details.According to the following describes, advantages and features of the invention will be clearer.Form plasma for radio frequency electrical from mode herein, content of the present invention is described.It should be noted that, embodiment accompanying drawing used all adopts reduced graph, so that the explanation explanation of additional embodiments.
Embodiment
Embodiment 1
Embodiments of the invention 1 occur in SiH4 manufacturing process, and reaction source is SiH4 and N2O, test hardware used and substrate as follows:
1, please refer to Fig. 1, the present embodiment loading ceramic ring used depth of groove d
1scope is respectively 0.5mm-1.0mm and 1.0-1.5mm, ceramic ring on objective table, for the support of object to be processed.
2, the silicon chip of the present embodiment substrate used to be diameter be 300mm, thickness is 0.775 μm.
Please refer to Fig. 2, this figure is the deposition conditions contrast of different ceramic ring shoulder height under same process formula.With the center of circle of silicon chip for initial point, x-axis is that y-axis is the silicon chip surface radially film thickness of direction through plasma treatment and the ratio of silicon chip central film thickness along the coordinate of silicon chip radial distance silicon chip limit 3mm by (-147mm-147mm).Visible, supporting silicon chip ceramic ring depth of groove is different, through plasma treatment film thickness difference silicon chip edge embody particularly evident, therefore, if the pattern of adjustment crystal column surface institute deposit film, or improve the uniformity of film thickness, this ceramic ring will play vital effect.
Embodiment 2
The embodiment of the present invention 2 occurs in TEOS manufacturing process, and reaction source is TEOS and O
2, test hardware used and substrate as follows:
1, please refer to Fig. 1, the present embodiment loading ceramic ring used depth of groove d
1scope is respectively 0.5mm-1.0mm and 1.0mm-1.5mm, ceramic ring on objective table, for the support of object to be processed.
2, the silicon chip of the present embodiment substrate used to be diameter be 300mm, thickness is 0.775 μm.
Please refer to Fig. 3, this figure is the deposition conditions contrast of different ceramic ring depth of groove under same process formula.With the center of circle of silicon chip for initial point, x-axis is that y-axis is the silicon chip surface radially film thickness of direction through plasma treatment and the ratio of silicon chip central film thickness along the coordinate of silicon chip radial distance silicon chip limit 3mm by (-147mm-147mm).Visible, supporting silicon chip ceramic ring depth of groove is different, through plasma treatment film thickness difference silicon chip edge embody particularly evident, therefore, if the pattern of adjustment crystal column surface institute deposit film, or improve the uniformity of film thickness, this ceramic ring will play vital effect.
Claims (4)
1. can change a ceramic ring for crystal column surface film morphology, it is characterized in that: the cylindrical of described ceramic ring is shaped with the step of support wafer.
2. can change the ceramic ring of crystal column surface film morphology as claimed in claim 1, it is characterized in that: described ceramic ring is positioned on objective table, for the carrying of wafer to be processed, the height d of the step 4 of described support wafer
1can adjust, the step of ceramic ring and crystal column surface relative altitude change and can affect crystal round fringes air-flow and plasma distributes, thus improve the processing quality of crystal round fringes.
3. can change the ceramic ring of crystal column surface film morphology as claimed in claim 1, it is characterized in that: the step 4 of described support wafer is right angle.
4. can change the ceramic ring of crystal column surface film morphology as claimed in claim 1, it is characterized in that: have gap between the edge of wafer and the step of support wafer, and gap be fixed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510524095.1A CN105185732A (en) | 2015-08-24 | 2015-08-24 | Ceramic ring capable of changing shape and appearance of surface film of wafer |
| PCT/CN2015/092365 WO2017031821A1 (en) | 2015-08-24 | 2015-10-21 | Ceramic ring capable of changing shape and appearance of surface thin film of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510524095.1A CN105185732A (en) | 2015-08-24 | 2015-08-24 | Ceramic ring capable of changing shape and appearance of surface film of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105185732A true CN105185732A (en) | 2015-12-23 |
Family
ID=54907724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510524095.1A Pending CN105185732A (en) | 2015-08-24 | 2015-08-24 | Ceramic ring capable of changing shape and appearance of surface film of wafer |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105185732A (en) |
| WO (1) | WO2017031821A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112779522A (en) * | 2020-12-28 | 2021-05-11 | 芯思杰技术(深圳)股份有限公司 | Film coating device and film coating method |
| CN112786522A (en) * | 2020-12-31 | 2021-05-11 | 拓荆科技股份有限公司 | Tray device capable of adjusting thickness of edge film of wafer |
| CN113802111A (en) * | 2020-06-13 | 2021-12-17 | 拓荆科技股份有限公司 | Apparatus for processing substrate using plasma and method for improving surface topography of wafer film |
| CN114318305A (en) * | 2021-12-28 | 2022-04-12 | 拓荆科技股份有限公司 | Wafer film deposition device |
| CN114351120A (en) * | 2021-12-27 | 2022-04-15 | 拓荆科技股份有限公司 | Wafer supporting device and method for controlling thickness of deposited film |
| CN114855149A (en) * | 2021-03-25 | 2022-08-05 | 拓荆科技股份有限公司 | Shadow ring and reaction cavity structure comprising same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6753255B1 (en) * | 2002-05-17 | 2004-06-22 | Lsi Logic Corporation | Process for wafer edge profile control using gas flow control ring |
| CN1723528A (en) * | 2000-10-13 | 2006-01-18 | 兰姆研究公司 | Stepped upper electrode for plasma processing uniformity |
| CN202786423U (en) * | 2012-09-03 | 2013-03-13 | 沈阳拓荆科技有限公司 | Novel aluminum wafer heating plate |
| CN203562415U (en) * | 2013-11-01 | 2014-04-23 | 沈阳拓荆科技有限公司 | Novel wafer carrier |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6896765B2 (en) * | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
| US7338578B2 (en) * | 2004-01-20 | 2008-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step edge insert ring for etch chamber |
| JP4336320B2 (en) * | 2005-02-25 | 2009-09-30 | キヤノンアネルバ株式会社 | Wafer holder |
| DE202010014805U1 (en) * | 2009-11-02 | 2011-02-17 | Lam Research Corporation (Delaware Corporation) | Hot edge ring with inclined upper surface |
| CN103811247B (en) * | 2014-02-17 | 2016-04-13 | 清华大学 | For plasma etching focusing ring and there is its plasma etching apparatus |
-
2015
- 2015-08-24 CN CN201510524095.1A patent/CN105185732A/en active Pending
- 2015-10-21 WO PCT/CN2015/092365 patent/WO2017031821A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1723528A (en) * | 2000-10-13 | 2006-01-18 | 兰姆研究公司 | Stepped upper electrode for plasma processing uniformity |
| US6753255B1 (en) * | 2002-05-17 | 2004-06-22 | Lsi Logic Corporation | Process for wafer edge profile control using gas flow control ring |
| CN202786423U (en) * | 2012-09-03 | 2013-03-13 | 沈阳拓荆科技有限公司 | Novel aluminum wafer heating plate |
| CN203562415U (en) * | 2013-11-01 | 2014-04-23 | 沈阳拓荆科技有限公司 | Novel wafer carrier |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113802111A (en) * | 2020-06-13 | 2021-12-17 | 拓荆科技股份有限公司 | Apparatus for processing substrate using plasma and method for improving surface topography of wafer film |
| CN113802111B (en) * | 2020-06-13 | 2023-10-31 | 拓荆科技股份有限公司 | Apparatus for treating substrate using plasma and method for improving surface morphology of wafer thin film |
| CN112779522A (en) * | 2020-12-28 | 2021-05-11 | 芯思杰技术(深圳)股份有限公司 | Film coating device and film coating method |
| CN112779522B (en) * | 2020-12-28 | 2023-11-28 | 芯思杰技术(深圳)股份有限公司 | Coating device and coating method |
| CN112786522A (en) * | 2020-12-31 | 2021-05-11 | 拓荆科技股份有限公司 | Tray device capable of adjusting thickness of edge film of wafer |
| CN114855149A (en) * | 2021-03-25 | 2022-08-05 | 拓荆科技股份有限公司 | Shadow ring and reaction cavity structure comprising same |
| CN114855149B (en) * | 2021-03-25 | 2023-07-28 | 拓荆科技股份有限公司 | Shadow ring and reaction cavity structure comprising same |
| CN114351120A (en) * | 2021-12-27 | 2022-04-15 | 拓荆科技股份有限公司 | Wafer supporting device and method for controlling thickness of deposited film |
| CN114318305A (en) * | 2021-12-28 | 2022-04-12 | 拓荆科技股份有限公司 | Wafer film deposition device |
| CN114318305B (en) * | 2021-12-28 | 2023-06-30 | 拓荆科技股份有限公司 | Wafer film deposition device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017031821A1 (en) | 2017-03-02 |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151223 |
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| RJ01 | Rejection of invention patent application after publication |