JP2012049376A5 - - Google Patents

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Publication number
JP2012049376A5
JP2012049376A5 JP2010190969A JP2010190969A JP2012049376A5 JP 2012049376 A5 JP2012049376 A5 JP 2012049376A5 JP 2010190969 A JP2010190969 A JP 2010190969A JP 2010190969 A JP2010190969 A JP 2010190969A JP 2012049376 A5 JP2012049376 A5 JP 2012049376A5
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JP
Japan
Prior art keywords
gas
plasma processing
plasma
supply means
susceptor
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JP2010190969A
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English (en)
Japanese (ja)
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JP2012049376A (ja
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Priority to JP2010190969A priority Critical patent/JP2012049376A/ja
Priority claimed from JP2010190969A external-priority patent/JP2012049376A/ja
Publication of JP2012049376A publication Critical patent/JP2012049376A/ja
Publication of JP2012049376A5 publication Critical patent/JP2012049376A5/ja
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JP2010190969A 2010-08-27 2010-08-27 プラズマ処理装置およびプラズマ処理方法 Pending JP2012049376A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010190969A JP2012049376A (ja) 2010-08-27 2010-08-27 プラズマ処理装置およびプラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010190969A JP2012049376A (ja) 2010-08-27 2010-08-27 プラズマ処理装置およびプラズマ処理方法

Publications (2)

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JP2012049376A JP2012049376A (ja) 2012-03-08
JP2012049376A5 true JP2012049376A5 (enExample) 2013-09-05

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JP2010190969A Pending JP2012049376A (ja) 2010-08-27 2010-08-27 プラズマ処理装置およびプラズマ処理方法

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022605A (ja) * 2012-07-19 2014-02-03 Phoeton Corp レーザアニール装置
CN104995158B (zh) * 2013-02-21 2018-11-02 日本瑞翁株式会社 高纯度1h-七氟环戊烯
KR20140140418A (ko) 2013-05-29 2014-12-09 삼성디스플레이 주식회사 유기층 에칭 장치 및 유기층 에칭 방법
US20150118416A1 (en) * 2013-10-31 2015-04-30 Semes Co., Ltd. Substrate treating apparatus and method
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP6595335B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102891545B1 (ko) 2017-11-21 2025-11-25 램 리써치 코포레이션 하단 링 및 중간 에지 링
US11798789B2 (en) 2018-08-13 2023-10-24 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
US20230402259A1 (en) * 2020-11-23 2023-12-14 Lam Research Corporation Localized plasma arc prevention via purge ring
CN116034455A (zh) * 2021-04-08 2023-04-28 东京毅力科创株式会社 蚀刻方法和等离子体处理系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0634242U (ja) * 1992-09-30 1994-05-06 住友金属工業株式会社 マイクロ波プラズマ処理装置
JP3921771B2 (ja) * 1998-01-19 2007-05-30 ソニー株式会社 ドライエッチング装置およびドライエッチング方法
JP3628603B2 (ja) * 2000-09-28 2005-03-16 大日本スクリーン製造株式会社 基板表面処理装置および基板表面処理方法
JP4433614B2 (ja) * 2001-01-17 2010-03-17 ソニー株式会社 エッチング装置
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US20080194112A1 (en) * 2007-02-09 2008-08-14 International Business Machines Corporation Method and system for plasma etching having improved across-wafer etch uniformity
KR101437522B1 (ko) * 2007-09-05 2014-09-03 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 반응기 챔버에서 웨이퍼 에지 가스 주입부를 갖는캐소드 라이너
JP5514310B2 (ja) * 2010-06-28 2014-06-04 東京エレクトロン株式会社 プラズマ処理方法

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