JP2012124168A5 - - Google Patents

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Publication number
JP2012124168A5
JP2012124168A5 JP2012005596A JP2012005596A JP2012124168A5 JP 2012124168 A5 JP2012124168 A5 JP 2012124168A5 JP 2012005596 A JP2012005596 A JP 2012005596A JP 2012005596 A JP2012005596 A JP 2012005596A JP 2012124168 A5 JP2012124168 A5 JP 2012124168A5
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JP
Japan
Prior art keywords
nozzle
discharge cavity
plasma
substrate
power source
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JP2012005596A
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English (en)
Japanese (ja)
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JP5642721B2 (ja
JP2012124168A (ja
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Publication of JP2012124168A5 publication Critical patent/JP2012124168A5/ja
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JP2012005596A 2002-09-19 2012-01-13 ビーム状プラズマ源 Expired - Fee Related JP5642721B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41205102P 2002-09-19 2002-09-19
US60/412,051 2002-09-19

Related Parent Applications (1)

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JP2004537902A Division JP5160730B2 (ja) 2002-09-19 2003-09-19 ビーム状プラズマ源

Publications (3)

Publication Number Publication Date
JP2012124168A JP2012124168A (ja) 2012-06-28
JP2012124168A5 true JP2012124168A5 (enExample) 2013-03-14
JP5642721B2 JP5642721B2 (ja) 2014-12-17

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JP2004537902A Expired - Fee Related JP5160730B2 (ja) 2002-09-19 2003-09-19 ビーム状プラズマ源
JP2012005596A Expired - Fee Related JP5642721B2 (ja) 2002-09-19 2012-01-13 ビーム状プラズマ源

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JP2004537902A Expired - Fee Related JP5160730B2 (ja) 2002-09-19 2003-09-19 ビーム状プラズマ源

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US (1) US7327089B2 (enExample)
EP (1) EP1554412B1 (enExample)
JP (2) JP5160730B2 (enExample)
AU (1) AU2003299015A1 (enExample)
WO (1) WO2004027825A2 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
FR2857555B1 (fr) * 2003-07-09 2005-10-14 Snecma Moteurs Accelerateur a plasma a derive fermee d'electrons
US7312579B2 (en) * 2006-04-18 2007-12-25 Colorado Advanced Technology Llc Hall-current ion source for ion beams of low and high energy for technological applications
CN101796213B (zh) * 2007-08-30 2012-07-11 皇家飞利浦电子股份有限公司 溅射系统
DE102008028542B4 (de) * 2008-06-16 2012-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Abscheiden einer Schicht auf einem Substrat mittels einer plasmagestützten chemischen Reaktion
TWI532414B (zh) 2008-08-04 2016-05-01 Ａｇｃ北美平面玻璃公司 電漿源及使用電漿增強化學氣相沉積以沉積薄膜塗層之方法
DE102009037853B3 (de) * 2009-08-18 2011-03-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasflusssputterquelle
JPWO2012172630A1 (ja) * 2011-06-13 2015-02-23 トヨタ自動車株式会社 表面加工装置及び表面加工方法
US8617350B2 (en) 2011-06-15 2013-12-31 Belight Technology Corporation, Limited Linear plasma system
US10304665B2 (en) 2011-09-07 2019-05-28 Nano-Product Engineering, LLC Reactors for plasma-assisted processes and associated methods
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
DE102011112759A1 (de) * 2011-09-08 2013-03-14 Oerlikon Trading Ag, Trübbach Plasmaquelle
CN102523673A (zh) * 2011-12-19 2012-06-27 北京大学 一种采用磁镜场约束的等离子体密封窗及其密封方法
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
CN105008585A (zh) 2012-12-28 2015-10-28 零件喷涂公司 等离子体增强的化学气相沉积(pecvd)源
RU2636389C2 (ru) 2013-02-06 2017-11-23 Арселормитталь Инвестигасион И Десаррольо Сл Источник плазмы
WO2014201285A1 (en) * 2013-06-12 2014-12-18 General Plasma, Inc. Linear duoplasmatron
JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
US9968016B2 (en) * 2014-08-11 2018-05-08 Toyota Motor Engineering & Manufacturing North America, Inc. Magnetic field shield
US10683433B2 (en) 2014-10-29 2020-06-16 Ppg Industries Ohio, Inc. Protective coating system for plastic substrate
CN104411082B (zh) * 2014-11-12 2017-12-19 中国科学院深圳先进技术研究院 等离子源系统和等离子生成方法
US10586685B2 (en) 2014-12-05 2020-03-10 Agc Glass Europe Hollow cathode plasma source
CN107615888B (zh) 2014-12-05 2022-01-04 北美Agc平板玻璃公司 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US9721764B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Method of producing plasma by multiple-phase alternating or pulsed electrical current
US10192708B2 (en) * 2015-11-20 2019-01-29 Oregon Physics, Llc Electron emitter source
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
US10480063B2 (en) 2015-12-21 2019-11-19 Ionquest Corp. Capacitive coupled plasma source for sputtering and resputtering
US11359274B2 (en) 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US11482404B2 (en) 2015-12-21 2022-10-25 Ionquest Corp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US11823859B2 (en) 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
US12217949B2 (en) 2015-12-21 2025-02-04 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US10957519B2 (en) 2015-12-21 2021-03-23 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
WO2019154490A1 (en) * 2018-02-07 2019-08-15 Applied Materials, Inc. Deposition apparatus, method of coating a flexible substrate and flexible substrate having a coating
US11834204B1 (en) 2018-04-05 2023-12-05 Nano-Product Engineering, LLC Sources for plasma assisted electric propulsion
TWI686106B (zh) * 2019-01-25 2020-02-21 國立清華大學 場發射手持式常壓電漿產生裝置
WO2020198012A1 (en) * 2019-03-26 2020-10-01 Board Of Trustees Of Michigan State University Single beam plasma source
CN113365402B (zh) * 2020-03-06 2023-04-07 上海宏澎能源科技有限公司 限制等离子束的装置
JP7708515B2 (ja) * 2021-10-06 2025-07-15 東京エレクトロン株式会社 プラズマエッチング装置、及びプラズマエッチング方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
US4529571A (en) * 1982-10-27 1985-07-16 The United States Of America As Represented By The United States Department Of Energy Single-ring magnetic cusp low gas pressure ion source
US4727293A (en) * 1984-08-16 1988-02-23 Board Of Trustees Operating Michigan State University Plasma generating apparatus using magnets and method
YU46728B (sh) * 1986-10-23 1994-04-05 VUJO dr. MILJEVIĆ Jonsko-elektronski izvor sa šupljom anodom
US4868003A (en) * 1986-11-26 1989-09-19 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
JPS63274762A (ja) * 1987-05-01 1988-11-11 Ulvac Corp 反応蒸着膜の形成装置
ZA884511B (en) * 1987-07-15 1989-03-29 Boc Group Inc Method of plasma enhanced silicon oxide deposition
IT1211938B (it) * 1987-11-27 1989-11-08 Siv Soc Italiana Vetro Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature
US4915805A (en) * 1988-11-21 1990-04-10 At&T Bell Laboratories Hollow cathode type magnetron apparatus construction
DE4026367A1 (de) * 1990-06-25 1992-03-12 Leybold Ag Vorrichtung zum beschichten von substraten
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
DE4042286C1 (enExample) * 1990-12-31 1992-02-06 Leybold Ag, 6450 Hanau, De
DE69216685T2 (de) * 1991-05-31 1997-05-28 Deposition Sciences Inc Sputteranlage
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
JPH06128730A (ja) * 1992-10-20 1994-05-10 Nikon Corp 金属薄膜の製造方法
DE4236264C1 (enExample) * 1992-10-27 1993-09-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De
FR2701797B1 (fr) * 1993-02-18 1995-03-31 Commissariat Energie Atomique Coupleur de transfert d'une puissance micro-onde vers une nappe de plasma et source micro-onde linéaire pour le traitement de surfaces par plasma .
JPH0765764A (ja) * 1993-08-28 1995-03-10 Ulvac Japan Ltd シートイオンビーム装置
JP2876280B2 (ja) * 1993-12-27 1999-03-31 住友重機械工業株式会社 ビーム発生方法及び装置
JP2909696B2 (ja) * 1993-12-21 1999-06-23 住友重機械工業株式会社 ビーム発生方法及び装置
SE9403988L (sv) * 1994-11-18 1996-04-01 Ladislav Bardos Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning
RU2084085C1 (ru) * 1995-07-14 1997-07-10 Центральный научно-исследовательский институт машиностроения Ускоритель с замкнутым дрейфом электронов
JPH09228038A (ja) * 1996-02-23 1997-09-02 Balzers Prozes Syst Gmbh 中空のターゲットを備えた、陰極スパッタによりサブストレートを被覆するための装置
US6137231A (en) * 1996-09-10 2000-10-24 The Regents Of The University Of California Constricted glow discharge plasma source
JP4043089B2 (ja) * 1997-02-24 2008-02-06 株式会社エフオーアイ プラズマ処理装置
US6103074A (en) 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
JPH11297673A (ja) * 1998-04-15 1999-10-29 Hitachi Ltd プラズマ処理装置及びクリーニング方法
AUPP479298A0 (en) * 1998-07-21 1998-08-13 Sainty, Wayne Ion source
JP2965293B1 (ja) * 1998-11-10 1999-10-18 川崎重工業株式会社 電子ビーム励起プラズマ発生装置
DE10060002B4 (de) * 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
US6444100B1 (en) * 2000-02-11 2002-09-03 Seagate Technology Llc Hollow cathode sputter source
JP3865570B2 (ja) * 2000-06-16 2007-01-10 伊藤光学工業株式会社 プラズマ加工法
US6446572B1 (en) * 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6444945B1 (en) * 2001-03-28 2002-09-03 Cp Films, Inc. Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source
US7023128B2 (en) * 2001-04-20 2006-04-04 Applied Process Technologies, Inc. Dipole ion source
US20020153103A1 (en) * 2001-04-20 2002-10-24 Applied Process Technologies, Inc. Plasma treatment apparatus
US7294283B2 (en) * 2001-04-20 2007-11-13 Applied Process Technologies, Inc. Penning discharge plasma source
EP1388159B1 (en) * 2001-04-20 2011-12-07 General Plasma, Inc. Magnetic mirror plasma source
SE525231C2 (sv) * 2001-06-14 2005-01-11 Chemfilt R & D Ab Förfarande och anordning för att alstra plasma
US7025833B2 (en) * 2002-02-27 2006-04-11 Applied Process Technologies, Inc. Apparatus and method for web cooling in a vacuum coating chamber
US6919672B2 (en) * 2002-04-10 2005-07-19 Applied Process Technologies, Inc. Closed drift ion source
CH707466B1 (de) 2002-10-03 2014-07-15 Tetra Laval Holdings & Finance Vorrichtung zur Durchführung eines Plasma-unterstützten Prozesses.
US7259378B2 (en) * 2003-04-10 2007-08-21 Applied Process Technologies, Inc. Closed drift ion source
US7038389B2 (en) * 2003-05-02 2006-05-02 Applied Process Technologies, Inc. Magnetron plasma source
CA2567372A1 (en) 2004-07-01 2006-01-19 Cardinal Cg Company Cylindrical target with oscillating magnet from magnetron sputtering

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