JP2007043148A5 - - Google Patents

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Publication number
JP2007043148A5
JP2007043148A5 JP2006203029A JP2006203029A JP2007043148A5 JP 2007043148 A5 JP2007043148 A5 JP 2007043148A5 JP 2006203029 A JP2006203029 A JP 2006203029A JP 2006203029 A JP2006203029 A JP 2006203029A JP 2007043148 A5 JP2007043148 A5 JP 2007043148A5
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JP
Japan
Prior art keywords
substrate
chamber
etching apparatus
wall
plasma etching
Prior art date
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Granted
Application number
JP2006203029A
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English (en)
Japanese (ja)
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JP2007043148A (ja
JP4956080B2 (ja
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Publication date
Priority claimed from KR1020050069391A external-priority patent/KR101149332B1/ko
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Publication of JP2007043148A publication Critical patent/JP2007043148A/ja
Publication of JP2007043148A5 publication Critical patent/JP2007043148A5/ja
Application granted granted Critical
Publication of JP4956080B2 publication Critical patent/JP4956080B2/ja
Active legal-status Critical Current
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JP2006203029A 2005-07-29 2006-07-26 プラズマエッチング装置 Active JP4956080B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050069391A KR101149332B1 (ko) 2005-07-29 2005-07-29 플라즈마 식각 장치
KR2005-069391 2005-07-29

Publications (3)

Publication Number Publication Date
JP2007043148A JP2007043148A (ja) 2007-02-15
JP2007043148A5 true JP2007043148A5 (enExample) 2009-09-03
JP4956080B2 JP4956080B2 (ja) 2012-06-20

Family

ID=36954515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006203029A Active JP4956080B2 (ja) 2005-07-29 2006-07-26 プラズマエッチング装置

Country Status (6)

Country Link
US (2) US7879187B2 (enExample)
EP (1) EP1748465B1 (enExample)
JP (1) JP4956080B2 (enExample)
KR (1) KR101149332B1 (enExample)
CN (1) CN1905135B (enExample)
TW (1) TWI404138B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100978754B1 (ko) * 2008-04-03 2010-08-30 주식회사 테스 플라즈마 처리 장치
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
WO2008114958A1 (en) * 2007-03-16 2008-09-25 Sosul Co., Ltd. Apparatus for plasma processing and method for plasma processing
JP2010524225A (ja) * 2007-04-02 2010-07-15 ソースル シーオー エルティディー 基板支持装置及びこれを備えるプラズマエッチング装置
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
WO2013048013A1 (ko) * 2011-09-28 2013-04-04 한국기초과학지원연구원 비접촉식 플라즈마 에싱 장치
KR101405066B1 (ko) * 2011-09-28 2014-06-13 한국기초과학지원연구원 비접촉식 플라즈마 에싱 장치
KR101415740B1 (ko) * 2012-10-04 2014-07-04 한국기초과학지원연구원 원격 플라즈마 소스 에싱 장치
KR20140140418A (ko) * 2013-05-29 2014-12-09 삼성디스플레이 주식회사 유기층 에칭 장치 및 유기층 에칭 방법
EP3092324B1 (en) 2014-01-09 2020-07-15 United Technologies Corporation Coating process using gas screen
US9885110B2 (en) 2014-08-06 2018-02-06 United Technologies Corporation Pressure modulated coating
US11866816B2 (en) 2016-07-06 2024-01-09 Rtx Corporation Apparatus for use in coating process
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
WO2020210031A1 (en) * 2019-04-11 2020-10-15 Applied Materials, Inc. Plasma densification within a processing chamber
US10749248B1 (en) * 2019-09-23 2020-08-18 Qualcomm Incorporated Antenna module placement and housing for reduced power density exposure
CN119495544A (zh) * 2023-08-21 2025-02-21 中微半导体设备(上海)股份有限公司 一种刻蚀设备及其衬底处理系统和器件制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384008A (en) * 1993-06-18 1995-01-24 Applied Materials, Inc. Process and apparatus for full wafer deposition
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
DE19622015A1 (de) 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
JPH10241895A (ja) * 1996-11-04 1998-09-11 Applied Materials Inc プラズマシース発生高調波をフィルタリングすることによるプラズマプロセス効率の改善
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
US6271129B1 (en) * 1997-12-03 2001-08-07 Applied Materials, Inc. Method for forming a gap filling refractory metal layer having reduced stress
US6335293B1 (en) 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
WO2000041229A1 (fr) * 1998-12-28 2000-07-13 Tokyo Electron Limited Appareil a plasma et electrode inferieure associee
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
KR100433008B1 (ko) 2001-04-18 2004-05-31 (주)소슬 플라즈마 식각 장치
KR100428813B1 (ko) 2001-09-18 2004-04-29 주성엔지니어링(주) 플라즈마 발생장치 및 이를 이용한 ＳｉＯ₂박막 식각방법
US7556740B2 (en) 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
KR100486712B1 (ko) 2002-09-04 2005-05-03 삼성전자주식회사 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치
JP3692133B2 (ja) * 2002-12-04 2005-09-07 積水化学工業株式会社 ウェハー外縁の常圧プラズマ処理装置及びエッチング等の処理方法
JP3712125B2 (ja) * 2003-02-03 2005-11-02 東京応化工業株式会社 プラズマ処理装置
JP4394073B2 (ja) * 2003-05-02 2010-01-06 東京エレクトロン株式会社 処理ガス導入機構およびプラズマ処理装置
JP4122004B2 (ja) 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher

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