TWI404138B - 電漿蝕刻裝置 - Google Patents

電漿蝕刻裝置 Download PDF

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Publication number
TWI404138B
TWI404138B TW095127843A TW95127843A TWI404138B TW I404138 B TWI404138 B TW I404138B TW 095127843 A TW095127843 A TW 095127843A TW 95127843 A TW95127843 A TW 95127843A TW I404138 B TWI404138 B TW I404138B
Authority
TW
Taiwan
Prior art keywords
substrate
chamber
shield
plasma
edge portion
Prior art date
Application number
TW095127843A
Other languages
English (en)
Chinese (zh)
Other versions
TW200721299A (en
Inventor
全富一
Original Assignee
周星工程股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 周星工程股份有限公司 filed Critical 周星工程股份有限公司
Publication of TW200721299A publication Critical patent/TW200721299A/zh
Application granted granted Critical
Publication of TWI404138B publication Critical patent/TWI404138B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW095127843A 2005-07-29 2006-07-28 電漿蝕刻裝置 TWI404138B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050069391A KR101149332B1 (ko) 2005-07-29 2005-07-29 플라즈마 식각 장치

Publications (2)

Publication Number Publication Date
TW200721299A TW200721299A (en) 2007-06-01
TWI404138B true TWI404138B (zh) 2013-08-01

Family

ID=36954515

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095127843A TWI404138B (zh) 2005-07-29 2006-07-28 電漿蝕刻裝置

Country Status (6)

Country Link
US (2) US7879187B2 (enExample)
EP (1) EP1748465B1 (enExample)
JP (1) JP4956080B2 (enExample)
KR (1) KR101149332B1 (enExample)
CN (1) CN1905135B (enExample)
TW (1) TWI404138B (enExample)

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KR100978754B1 (ko) * 2008-04-03 2010-08-30 주식회사 테스 플라즈마 처리 장치
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US8888950B2 (en) * 2007-03-16 2014-11-18 Charm Engineering Co., Ltd. Apparatus for plasma processing and method for plasma processing
US8980049B2 (en) 2007-04-02 2015-03-17 Charm Engineering Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
WO2013048013A1 (ko) * 2011-09-28 2013-04-04 한국기초과학지원연구원 비접촉식 플라즈마 에싱 장치
KR101405066B1 (ko) * 2011-09-28 2014-06-13 한국기초과학지원연구원 비접촉식 플라즈마 에싱 장치
KR101415740B1 (ko) * 2012-10-04 2014-07-04 한국기초과학지원연구원 원격 플라즈마 소스 에싱 장치
KR20140140418A (ko) * 2013-05-29 2014-12-09 삼성디스플레이 주식회사 유기층 에칭 장치 및 유기층 에칭 방법
EP3092324B1 (en) * 2014-01-09 2020-07-15 United Technologies Corporation Coating process using gas screen
US9885110B2 (en) 2014-08-06 2018-02-06 United Technologies Corporation Pressure modulated coating
US11866816B2 (en) 2016-07-06 2024-01-09 Rtx Corporation Apparatus for use in coating process
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
JP7564123B2 (ja) * 2019-04-11 2024-10-08 アプライド マテリアルズ インコーポレイテッド 処理チャンバ内でのプラズマの高密度化
US10749248B1 (en) * 2019-09-23 2020-08-18 Qualcomm Incorporated Antenna module placement and housing for reduced power density exposure
KR102580583B1 (ko) * 2021-08-10 2023-09-21 피에스케이 주식회사 기판 처리 장치
CN119495544B (zh) * 2023-08-21 2026-05-12 中微半导体设备(上海)股份有限公司 一种刻蚀设备及其衬底处理系统和器件制备方法
KR20250034763A (ko) * 2023-09-04 2025-03-11 (주)제이하라 플라즈마 발생장치 및 그 사용방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0840350A2 (en) * 1996-11-04 1998-05-06 Applied Materials, Inc. Plasma apparatus and process with filtering of plasma sheath-generated harmonics
WO1999028527A1 (en) * 1997-12-03 1999-06-10 Applied Materials, Inc. Method and apparatus for forming a metal layer
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface

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US5384008A (en) * 1993-06-18 1995-01-24 Applied Materials, Inc. Process and apparatus for full wafer deposition
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
DE19622015A1 (de) 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
US6335293B1 (en) 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US6492612B1 (en) * 1998-12-28 2002-12-10 Tokyo Electron Limited Plasma apparatus and lower electrode thereof
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
KR100433008B1 (ko) 2001-04-18 2004-05-31 (주)소슬 플라즈마 식각 장치
KR100428813B1 (ko) 2001-09-18 2004-04-29 주성엔지니어링(주) 플라즈마 발생장치 및 이를 이용한 ＳｉＯ₂박막 식각방법
DE10340147B4 (de) 2002-08-27 2014-04-10 Kyocera Corp. Trockenätzverfahren und Trockenätzvorrichtung
KR100486712B1 (ko) 2002-09-04 2005-05-03 삼성전자주식회사 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치
JP3692133B2 (ja) * 2002-12-04 2005-09-07 積水化学工業株式会社 ウェハー外縁の常圧プラズマ処理装置及びエッチング等の処理方法
JP3712125B2 (ja) * 2003-02-03 2005-11-02 東京応化工業株式会社 プラズマ処理装置
WO2004097919A1 (ja) * 2003-05-02 2004-11-11 Tokyo Electron Limited 処理ガス導入機構およびプラズマ処理装置
AU2003284723A1 (en) 2003-05-12 2004-11-26 Sosul Co., Ltd. Plasma etching chamber and plasma etching system using same
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0840350A2 (en) * 1996-11-04 1998-05-06 Applied Materials, Inc. Plasma apparatus and process with filtering of plasma sheath-generated harmonics
WO1999028527A1 (en) * 1997-12-03 1999-06-10 Applied Materials, Inc. Method and apparatus for forming a metal layer
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface

Also Published As

Publication number Publication date
TW200721299A (en) 2007-06-01
JP2007043148A (ja) 2007-02-15
EP1748465A2 (en) 2007-01-31
US8177992B2 (en) 2012-05-15
CN1905135B (zh) 2012-05-09
EP1748465B1 (en) 2015-04-15
US7879187B2 (en) 2011-02-01
KR101149332B1 (ko) 2012-05-23
JP4956080B2 (ja) 2012-06-20
KR20070014601A (ko) 2007-02-01
EP1748465A3 (en) 2009-10-14
KR101149332B9 (ko) 2025-01-10
US20110079581A1 (en) 2011-04-07
US20070029044A1 (en) 2007-02-08
CN1905135A (zh) 2007-01-31

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