JP5905503B2 - ライナーアセンブリ及びこれを備える基板処理装置 - Google Patents
ライナーアセンブリ及びこれを備える基板処理装置 Download PDFInfo
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- 238000002347 injection Methods 0.000 claims description 55
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- 238000005530 etching Methods 0.000 description 13
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 238000003672 processing method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Description
200:基板支持ユニット
300、400:シャワーヘッド
510、520:ガス供給ライン
600:ガス噴射アセンブリ
710:プラズマ発生管
720:アンテナ
800:磁場発生部
900:排気部
1000:ライナーアセンブリ
1100:側部ライナー
1200:上部ライナー
1300:下部ライナー
1400:下部ライナー
Claims (12)
- 上下開放された筒状の側部ライナーと、
前記側部ライナーの上側に設けられた上部ライナーと、
中心部に開口部が形成された円形の板状に設けられるとともに前記側部ライナーの下側に設けられ、上下を貫通する複数の第1孔が穿設された中間ライナーと、
中心部に開口部が形成された円形の板状に設けられるとともに前記中間ライナーから離隔されて前記中間ライナーの下側に設けられた下部ライナーと、
前記下部ライナーに設けられているとともに、前記中間ライナーと接触されて設けられ、前記下部ライナーの開口部と前記中間ライナーの開口部とを囲繞するように設けられ、複数の第2孔が穿設された突出部と、
を備え、
前記上部ライナーは前記側部ライナーの上側と係合され、前記中間ライナーは前記側部ライナーの下側と係合され、前記下部ライナーは前記突出部を間に挟んで前記中間ライナーと係合され、
前記第1孔は、複数の領域において異なる大きさまたは数で穿設されたライナーアセンブリ。 - 前記下部ライナー及び中間ライナーの前記開口部は、前記側部ライナーの直径よりも小さい請求項1に記載のライナーアセンブリ。
- 前記第1孔は、ある領域からこれと遠ざかる領域に進むにつれて大きさまたは数が増大するように穿設された請求項2に記載のライナーアセンブリ。
- 反応空間が設けられ、下側側面に排気口が形成されたチャンバと、
前記チャンバ内に設けられて基板を支持する基板支持台と、
前記チャンバ内に工程ガスを噴射するガス噴射アセンブリと、
前記工程ガスのプラズマを発生させるプラズマ発生部と、
前記チャンバ内に設けられたライナーアセンブリと、
を備え、
前記ライナーアセンブリは、上下開放された筒状の側部ライナーと、前記側部ライナーの上側に設けられた上部ライナーと、中心部に開口部が形成された円形の板状に設けられているとともに前記側部ライナーの下側に設けられ、上下を貫通する複数の第1孔が穿設された中間ライナーと、中心部に開口部が形成された円形の板状に設けられ、前記中間ライナーから離隔されて前記中間ライナーの下側に設けられた下部ライナーと、前記下部ライナーに設けられているとともに、前記中間ライナーと接触されて設けられ、前記下部ライナーの開口部と前記中間ライナーの開口部とを囲繞するように設けられ、複数の第2孔が穿設された突出部とを備え、
前記上部ライナーは前記側部ライナーの上側と係合され、前記中間ライナーは前記側部ライナーの下側と係合され、前記下部ライナーは前記突出部を間に挟んで前記中間ライナーと係合され、
前記第1孔は、複数の領域において異なる大きさまたは数で穿設された基板処理装置。 - 前記ガス噴射アセンブリは、
第1シャワーヘッドと、
前記第1シャワーヘッドの下側に隔設される第1胴体と、前記第1胴体の下側に隔設され、複数の第1噴射孔及び第2噴射孔が設けられた第2胴体とを有する第2シャワーヘッドと、
上下方向に延びて前記第1胴体と前記第2噴射孔とを継合する継合管と、
を備える請求項4に記載の基板処理装置。 - 前記プラズマ発生部は、前記第1シャワーヘッドと、前記第1胴体及び前記第2胴体のうちの少なくとも一方に電源を印加する電源供給部と、を備える請求項5に記載の基板処理装置。
- 前記電源供給部は、前記第1シャワーヘッドと前記第1胴体との間に第1プラズマを生成する第1プラズマ生成領域が形成され、前記第1胴体と前記第2胴体との間に第2プラズマを生成する第2プラズマ生成領域が形成され、前記第1及び第2プラズマのうちのどちらか一方はイオンエネルギー及び密度が高く、他方はそれに比べてイオンエネルギー及び密度が低いように電源を印加する請求項6に記載の基板処理装置。
- 前記ガス噴射アセンブリは、プラズマ発生のための電源が印加されて内側若しくは外側に第1プラズマ領域を形成するシャワーヘッドを備える請求項4に記載の基板処理装置。
- 前記チャンバの内部において前記チャンバの長手方向に延びて前記シャワーヘッドを貫通するように配設され、内部に第2プラズマ領域を形成するプラズマ発生管と、
前記プラズマ発生管の外周面を囲繞するように配設され、プラズマ発生のための電源が印加されるアンテナと、
をさらに備える請求項8に記載の基板処理装置。 - 前記シャワーヘッドは、上側に配設され、電源が印加される第1シャワーヘッドと、前記第1シャワーヘッドの下側に隔設されて接地される第2シャワーヘッドと、を備え、
前記第1プラズマ領域は、前記第1シャワーヘッドと第2シャワーヘッドとの間の領域である請求項9に記載の基板処理装置。 - 前記排気口と接続され、前記チャンバの外側部に設けられて前記チャンバの内部を排気するための排気部と、
前記プラズマ発生部と前記基板支持台との間に設けられて前記工程ガスのプラズマの一部を遮断するフィルタ部と、
をさらに備える請求項4に記載の基板処理装置。 - 前記下部ライナー及び中間ライナーの前記開口部は、前記側部ライナーの直径よりも小さく、前記基板支持台を支持するシャフトが嵌入される請求項4に記載の基板処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0030917 | 2013-03-22 | ||
KR1020130030917A KR101451244B1 (ko) | 2013-03-22 | 2013-03-22 | 라이너 어셈블리 및 이를 구비하는 기판 처리 장치 |
Publications (2)
Publication Number | Publication Date |
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JP2014196561A JP2014196561A (ja) | 2014-10-16 |
JP5905503B2 true JP5905503B2 (ja) | 2016-04-20 |
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2013
- 2013-03-22 KR KR1020130030917A patent/KR101451244B1/ko active IP Right Grant
- 2013-06-11 US US13/915,573 patent/US20140283746A1/en not_active Abandoned
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2014
- 2014-03-14 JP JP2014052013A patent/JP5905503B2/ja active Active
- 2014-03-21 CN CN201410108752.XA patent/CN104060238B/zh active Active
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2016
- 2016-02-11 US US15/042,136 patent/US20160160351A1/en not_active Abandoned
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US20140283746A1 (en) | 2014-09-25 |
JP2014196561A (ja) | 2014-10-16 |
KR101451244B1 (ko) | 2014-10-15 |
US20160168706A1 (en) | 2016-06-16 |
CN104060238A (zh) | 2014-09-24 |
CN104060238B (zh) | 2017-04-12 |
US20160160351A1 (en) | 2016-06-09 |
KR20140115795A (ko) | 2014-10-01 |
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