JP2011524471A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011524471A5 JP2011524471A5 JP2011514713A JP2011514713A JP2011524471A5 JP 2011524471 A5 JP2011524471 A5 JP 2011524471A5 JP 2011514713 A JP2011514713 A JP 2011514713A JP 2011514713 A JP2011514713 A JP 2011514713A JP 2011524471 A5 JP2011524471 A5 JP 2011524471A5
- Authority
- JP
- Japan
- Prior art keywords
- collimator
- chamber
- substrate support
- sputtering target
- central region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 12
- 238000005477 sputtering target Methods 0.000 claims 11
- 230000002093 peripheral effect Effects 0.000 claims 9
- 230000007423 decrease Effects 0.000 claims 6
- 238000000034 method Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 230000002459 sustained effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7313008P | 2008-06-17 | 2008-06-17 | |
| US61/073,130 | 2008-06-17 | ||
| PCT/US2009/047103 WO2009155208A2 (en) | 2008-06-17 | 2009-06-11 | Apparatus and method for uniform deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011524471A JP2011524471A (ja) | 2011-09-01 |
| JP2011524471A5 true JP2011524471A5 (enExample) | 2012-07-26 |
Family
ID=41413769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011514713A Pending JP2011524471A (ja) | 2008-06-17 | 2009-06-11 | 均一蒸着のための装置及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20090308732A1 (enExample) |
| JP (1) | JP2011524471A (enExample) |
| KR (8) | KR20160134873A (enExample) |
| CN (1) | CN102066603B (enExample) |
| WO (1) | WO2009155208A2 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101845610B (zh) * | 2010-06-07 | 2011-12-07 | 崔铮 | 一种连续垂直热蒸发的金属镀膜方法 |
| JP5825781B2 (ja) * | 2010-12-17 | 2015-12-02 | キヤノン株式会社 | 反射防止膜形成方法及び反射防止膜形成装置 |
| CN103165375B (zh) * | 2011-12-09 | 2016-06-01 | 中国科学院微电子研究所 | 半导体腔室用压片装置 |
| US8702918B2 (en) | 2011-12-15 | 2014-04-22 | Applied Materials, Inc. | Apparatus for enabling concentricity of plasma dark space |
| US9404174B2 (en) | 2011-12-15 | 2016-08-02 | Applied Materials, Inc. | Pinned target design for RF capacitive coupled plasma |
| US20140061039A1 (en) * | 2012-09-05 | 2014-03-06 | Applied Materials, Inc. | Target cooling for physical vapor deposition (pvd) processing systems |
| US9831074B2 (en) * | 2013-10-24 | 2017-11-28 | Applied Materials, Inc. | Bipolar collimator utilized in a physical vapor deposition chamber |
| CN103602954B (zh) * | 2013-11-06 | 2016-02-24 | 深圳市华星光电技术有限公司 | 用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置 |
| US20150122643A1 (en) * | 2013-11-06 | 2015-05-07 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Supporting member for magnetron sputtering anode bar and magnetron sputtering device including the same |
| US9887072B2 (en) | 2014-01-23 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for integrated resputtering in a physical vapor deposition chamber |
| CN106536093A (zh) * | 2014-07-18 | 2017-03-22 | 应用材料公司 | 使用激光与气体流的增材制造 |
| US9543126B2 (en) * | 2014-11-26 | 2017-01-10 | Applied Materials, Inc. | Collimator for use in substrate processing chambers |
| US9887073B2 (en) * | 2015-02-13 | 2018-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Physical vapor deposition system and physical vapor depositing method using the same |
| KR20240127488A (ko) | 2015-10-27 | 2024-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터 |
| IL261173B2 (en) | 2016-03-05 | 2023-03-01 | Applied Materials Inc | Methods and device for controlling ionic fraction in physical vapor deposition processes |
| JP6088083B1 (ja) * | 2016-03-14 | 2017-03-01 | 株式会社東芝 | 処理装置及びコリメータ |
| USD858468S1 (en) * | 2018-03-16 | 2019-09-03 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| US11017989B2 (en) | 2018-03-16 | 2021-05-25 | Samsung Electronics Co., Ltd. | Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same |
| USD859333S1 (en) * | 2018-03-16 | 2019-09-10 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| CN110643958A (zh) * | 2019-10-21 | 2020-01-03 | 吴浪生 | 一种利用溅镀实现晶圆的物理镀膜设备 |
| USD937329S1 (en) | 2020-03-23 | 2021-11-30 | Applied Materials, Inc. | Sputter target for a physical vapor deposition chamber |
| USD998575S1 (en) | 2020-04-07 | 2023-09-12 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition (PVD) chamber |
| US20220406583A1 (en) * | 2021-06-18 | 2022-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
| US11851751B2 (en) | 2021-07-23 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
| USD1009816S1 (en) | 2021-08-29 | 2024-01-02 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| USD997111S1 (en) | 2021-12-15 | 2023-08-29 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition (PVD) chamber |
| USD1038901S1 (en) | 2022-01-12 | 2024-08-13 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
| FI20225334A1 (en) * | 2022-04-21 | 2023-10-22 | Biomensio Ltd | Collimator to produce piezoelectric layers having tilted c-axis orientation |
| WO2025226404A1 (en) * | 2024-04-22 | 2025-10-30 | Applied Materials, Inc. | Delivery of configurable pulsed voltage waveforms for substrate processing |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362372A (en) * | 1993-06-11 | 1994-11-08 | Applied Materials, Inc. | Self cleaning collimator |
| US5380414A (en) * | 1993-06-11 | 1995-01-10 | Applied Materials, Inc. | Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor |
| US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
| US5431799A (en) * | 1993-10-29 | 1995-07-11 | Applied Materials, Inc. | Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency |
| US5650052A (en) * | 1995-10-04 | 1997-07-22 | Edelstein; Sergio | Variable cell size collimator |
| US5985102A (en) * | 1996-01-29 | 1999-11-16 | Micron Technology, Inc. | Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using |
| US5658442A (en) * | 1996-03-07 | 1997-08-19 | Applied Materials, Inc. | Target and dark space shield for a physical vapor deposition system |
| JPH10176267A (ja) | 1996-12-13 | 1998-06-30 | Applied Materials Inc | スパッタ装置 |
| US6692617B1 (en) * | 1997-05-08 | 2004-02-17 | Applied Materials, Inc. | Sustained self-sputtering reactor having an increased density plasma |
| US6482301B1 (en) * | 1998-06-04 | 2002-11-19 | Seagate Technology, Inc. | Target shields for improved magnetic properties of a recording medium |
| US6149776A (en) * | 1998-11-12 | 2000-11-21 | Applied Materials, Inc. | Copper sputtering target |
| KR20000052104A (ko) * | 1999-01-29 | 2000-08-16 | 윤종용 | 스퍼터링 장치의 콜리메이터 구조 및 그 제조방법 |
| US20030116427A1 (en) * | 2001-08-30 | 2003-06-26 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
| US6699375B1 (en) * | 2000-06-29 | 2004-03-02 | Applied Materials, Inc. | Method of extending process kit consumable recycling life |
| US20030015421A1 (en) * | 2001-07-20 | 2003-01-23 | Applied Materials, Inc. | Collimated sputtering of cobalt |
| US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| US7041200B2 (en) * | 2002-04-19 | 2006-05-09 | Applied Materials, Inc. | Reducing particle generation during sputter deposition |
| US7048837B2 (en) * | 2002-09-13 | 2006-05-23 | Applied Materials, Inc. | End point detection for sputtering and resputtering |
| JPWO2004047160A1 (ja) * | 2002-11-20 | 2006-03-23 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US7018515B2 (en) * | 2004-03-24 | 2006-03-28 | Applied Materials, Inc. | Selectable dual position magnetron |
| JP2007273490A (ja) * | 2004-03-30 | 2007-10-18 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
-
2009
- 2009-06-11 KR KR1020167031883A patent/KR20160134873A/ko not_active Ceased
- 2009-06-11 KR KR1020187004305A patent/KR20180019762A/ko not_active Ceased
- 2009-06-11 WO PCT/US2009/047103 patent/WO2009155208A2/en not_active Ceased
- 2009-06-11 JP JP2011514713A patent/JP2011524471A/ja active Pending
- 2009-06-11 US US12/482,713 patent/US20090308732A1/en not_active Abandoned
- 2009-06-11 KR KR1020177023703A patent/KR20170100068A/ko not_active Ceased
- 2009-06-11 CN CN2009801229458A patent/CN102066603B/zh active Active
- 2009-06-11 KR KR1020157033650A patent/KR20150137131A/ko not_active Ceased
- 2009-06-11 KR KR1020207021871A patent/KR20200093084A/ko not_active Withdrawn
- 2009-06-11 KR KR1020167034645A patent/KR20160145849A/ko not_active Ceased
- 2009-06-11 KR KR1020197023662A patent/KR20190097315A/ko not_active Ceased
- 2009-06-11 KR KR1020117001222A patent/KR20110020918A/ko not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011524471A5 (enExample) | ||
| JP2009001902A5 (enExample) | ||
| CN102066603B (zh) | 用于均匀沉积的装置和方法 | |
| KR100776861B1 (ko) | 큰 영역 기판의 마그네트론 스퍼터링 시스템 | |
| JP5722428B2 (ja) | Rfエネルギが中心に給送される物理蒸着のための装置 | |
| US9991101B2 (en) | Magnetron assembly for physical vapor deposition chamber | |
| JP2012515451A5 (enExample) | ||
| JP2011515582A5 (enExample) | ||
| JP5784703B2 (ja) | 回転磁石組立体及び中心に供給されるrf電力を有する物理蒸着チャンバ | |
| JP2008500457A5 (enExample) | ||
| JP2009057637A (ja) | ヘリカル磁気共振コイルを利用したイオン化物理的気相蒸着装置 | |
| TWI671417B (zh) | 在標靶生命期的期間維持低非均勻性的方法及設備 | |
| JP2017147278A (ja) | 基板載置台および基板処理装置 | |
| JP2007063663A (ja) | 扇形蒸着源 | |
| WO2014082554A1 (zh) | 物理气相沉积装置 | |
| JP2009531545A (ja) | コーティング装置 | |
| CN104011254B (zh) | 贵金属膜的连续成膜方法和电子零件的连续制造方法 | |
| KR20120137426A (ko) | 스퍼터링 장치 및 스퍼터링 방법 | |
| US11551918B2 (en) | Film forming apparatus | |
| JP2010090424A (ja) | スパッタ成膜方法及びプラズマ処理装置 | |
| TW201621073A (zh) | 使用熱膨脹係數相容之塗層在沉積腔室中減少顆粒 | |
| JP2013055165A5 (enExample) | ||
| TW202320136A (zh) | 用於處理基板的方法和設備 | |
| KR102045209B1 (ko) | 전류제어 마그네트론 적용 pvd 코팅 장치 | |
| KR20190056521A (ko) | 전자석을 구비한 스퍼터링 장치 |