JP2011524471A5 - - Google Patents

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Publication number
JP2011524471A5
JP2011524471A5 JP2011514713A JP2011514713A JP2011524471A5 JP 2011524471 A5 JP2011524471 A5 JP 2011524471A5 JP 2011514713 A JP2011514713 A JP 2011514713A JP 2011514713 A JP2011514713 A JP 2011514713A JP 2011524471 A5 JP2011524471 A5 JP 2011524471A5
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JP
Japan
Prior art keywords
collimator
chamber
substrate support
sputtering target
central region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011514713A
Other languages
English (en)
Japanese (ja)
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JP2011524471A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2009/047103 external-priority patent/WO2009155208A2/en
Publication of JP2011524471A publication Critical patent/JP2011524471A/ja
Publication of JP2011524471A5 publication Critical patent/JP2011524471A5/ja
Pending legal-status Critical Current

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JP2011514713A 2008-06-17 2009-06-11 均一蒸着のための装置及び方法 Pending JP2011524471A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7313008P 2008-06-17 2008-06-17
US61/073,130 2008-06-17
PCT/US2009/047103 WO2009155208A2 (en) 2008-06-17 2009-06-11 Apparatus and method for uniform deposition

Publications (2)

Publication Number Publication Date
JP2011524471A JP2011524471A (ja) 2011-09-01
JP2011524471A5 true JP2011524471A5 (enExample) 2012-07-26

Family

ID=41413769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011514713A Pending JP2011524471A (ja) 2008-06-17 2009-06-11 均一蒸着のための装置及び方法

Country Status (5)

Country Link
US (1) US20090308732A1 (enExample)
JP (1) JP2011524471A (enExample)
KR (8) KR20160134873A (enExample)
CN (1) CN102066603B (enExample)
WO (1) WO2009155208A2 (enExample)

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CN101845610B (zh) * 2010-06-07 2011-12-07 崔铮 一种连续垂直热蒸发的金属镀膜方法
JP5825781B2 (ja) * 2010-12-17 2015-12-02 キヤノン株式会社 反射防止膜形成方法及び反射防止膜形成装置
CN103165375B (zh) * 2011-12-09 2016-06-01 中国科学院微电子研究所 半导体腔室用压片装置
US8702918B2 (en) 2011-12-15 2014-04-22 Applied Materials, Inc. Apparatus for enabling concentricity of plasma dark space
US9404174B2 (en) 2011-12-15 2016-08-02 Applied Materials, Inc. Pinned target design for RF capacitive coupled plasma
US20140061039A1 (en) * 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems
US9831074B2 (en) * 2013-10-24 2017-11-28 Applied Materials, Inc. Bipolar collimator utilized in a physical vapor deposition chamber
CN103602954B (zh) * 2013-11-06 2016-02-24 深圳市华星光电技术有限公司 用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置
US20150122643A1 (en) * 2013-11-06 2015-05-07 Shenzhen China Star Optoelectronics Technology Co., Ltd. Supporting member for magnetron sputtering anode bar and magnetron sputtering device including the same
US9887072B2 (en) 2014-01-23 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for integrated resputtering in a physical vapor deposition chamber
CN106536093A (zh) * 2014-07-18 2017-03-22 应用材料公司 使用激光与气体流的增材制造
US9543126B2 (en) * 2014-11-26 2017-01-10 Applied Materials, Inc. Collimator for use in substrate processing chambers
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
KR20240127488A (ko) 2015-10-27 2024-08-22 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
IL261173B2 (en) 2016-03-05 2023-03-01 Applied Materials Inc Methods and device for controlling ionic fraction in physical vapor deposition processes
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
US11017989B2 (en) 2018-03-16 2021-05-25 Samsung Electronics Co., Ltd. Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
CN110643958A (zh) * 2019-10-21 2020-01-03 吴浪生 一种利用溅镀实现晶圆的物理镀膜设备
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
US20220406583A1 (en) * 2021-06-18 2022-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
US11851751B2 (en) 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
FI20225334A1 (en) * 2022-04-21 2023-10-22 Biomensio Ltd Collimator to produce piezoelectric layers having tilted c-axis orientation
WO2025226404A1 (en) * 2024-04-22 2025-10-30 Applied Materials, Inc. Delivery of configurable pulsed voltage waveforms for substrate processing

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KR20000052104A (ko) * 1999-01-29 2000-08-16 윤종용 스퍼터링 장치의 콜리메이터 구조 및 그 제조방법
US20030116427A1 (en) * 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
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US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
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US7048837B2 (en) * 2002-09-13 2006-05-23 Applied Materials, Inc. End point detection for sputtering and resputtering
JPWO2004047160A1 (ja) * 2002-11-20 2006-03-23 株式会社ルネサステクノロジ 半導体装置の製造方法
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