WO2014082554A1 - 物理气相沉积装置 - Google Patents

物理气相沉积装置 Download PDF

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Publication number
WO2014082554A1
WO2014082554A1 PCT/CN2013/087775 CN2013087775W WO2014082554A1 WO 2014082554 A1 WO2014082554 A1 WO 2014082554A1 CN 2013087775 W CN2013087775 W CN 2013087775W WO 2014082554 A1 WO2014082554 A1 WO 2014082554A1
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WO
WIPO (PCT)
Prior art keywords
distribution
vapor deposition
physical vapor
sputtering target
distribution ring
Prior art date
Application number
PCT/CN2013/087775
Other languages
English (en)
French (fr)
Inventor
陈鹏
赵梦欣
丁培军
王厚工
武学伟
刘建生
耿波
邱国庆
文莉辉
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
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Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to KR1020157017062A priority Critical patent/KR101700735B1/ko
Priority to SG11201504014TA priority patent/SG11201504014TA/en
Publication of WO2014082554A1 publication Critical patent/WO2014082554A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Definitions

  • the present invention relates to the field of semiconductor manufacturing technology, and in particular to a physical vapor deposition apparatus. Background technique
  • a negative bias is usually applied to a sputtering target to excite a process gas such as Ar (argon) in the reaction chamber into a plasma.
  • a process gas such as Ar (argon)
  • Ar argon
  • the ions in the plasma are attracted to bombard the target, thereby sputtering the target material and depositing it on the wafer or substrate.
  • Different application fields such as semiconductors, solars, light emitting diodes, etc.
  • process parameters such as sputtering voltage and sputtering rate.
  • conductive films such as indium tin oxide (ITO) and aluminum zinc oxide (AZO) used in solar energy, LED, etc., it is required to use a lower sputtering voltage. It is guaranteed that the sputter deposited film has better process performance.
  • a direct current power source applies a direct current power to a target to excite a gas into a plasma and generate a negative bias on the target to attract ions in the plasma.
  • the target is bombarded such that the sputtered target material is deposited on the substrate carried by the susceptor.
  • conventional physical vapor deposition devices pose a major problem for some special applications (such as ITO sputtering in the LED field).
  • DC sputtering produces a large voltage on the target, such as on the order of a few hundred volts, and produces a large DC bias of, for example, about several tens of volts on the surface of the substrate.
  • the present invention aims to solve at least one of the technical problems existing in the prior art.
  • a physical vapor deposition apparatus includes: a reaction chamber including a top wall, a sputtering target, and a substrate supporting member, the sputtering target being adjacent to the top wall, the substrate supporting a component is disposed in the reaction chamber and opposite to the sputtering target; a DC power source, the DC power source is coupled to the sputtering target; a RF power source, an output end of the RF power source and a RF matcher Connected to the RF feedthrough component in sequence, the RF feedthrough component comprising a distribution ring and a plurality of distribution strips disposed along a circumferential spacing of the distribution ring, the distribution ring being coupled to the splash by the distribution strip The RF feed component is coupled to the RF power source through the distribution ring.
  • the physical vapor deposition apparatus provided by the embodiment of the present invention minimizes the influence on the magnetron driving component by changing the feeding electrode structure without affecting the arrangement of the magnetron driving components.
  • uniform sputtering of the target is achieved to the utmost by the use of a ring-shaped RF feedthrough.
  • the physical vapor deposition apparatus has the following additional technical features:
  • the distribution ring is plural, and the plurality of distribution rings are parallel to each other and along the axial direction of the distribution ring The interval is set, and two adjacent distribution rings are connected by the distribution bar.
  • the projection ring has a circular projection shape on its radial section.
  • the plurality of distribution strips are evenly distributed along the circumference of the distribution ring Cloth.
  • the width of the cross section of the distribution strip is greater than or equal to
  • the thickness is greater than or equal to 0.1mm.
  • the radio frequency feed member is made of copper, silver or gold.
  • each of said distribution strips has at least two distribution sections, and a connection section is connected between adjacent two distribution sections.
  • the dispensing section extends in the axial direction of the dispensing ring.
  • the dispensing section extends obliquely inwardly or outwardly relative to the axial direction of the dispensing ring.
  • the connecting section extends along a plane parallel to the distribution ring.
  • the connecting section extends obliquely upwards or downwards with respect to the plane of the distribution ring.
  • the frequency of the radio frequency power source is between 2 MHz and 27.12 MHz, more specifically 2 MHz, 13.56 MHz or 27.12 MHz.
  • the physical vapor deposition apparatus further includes: a variable reactance component connected in series between the substrate supporting component and the ground for adjusting a DC bias of the substrate Pressure.
  • the variable reactance component is a variable capacitor, a variable inductor or a circuit composed of a variable capacitor and an inductor.
  • the sputtering target is a metal oxide target.
  • the metal oxide target is an indium tin oxide (ITO) material or an aluminum zinc oxide (AZO) material.
  • the content of tin oxide in the indium tin oxide target relative to the total indium tin oxide is 0.1% to 20%.
  • FIG. 1 is a schematic diagram of a physical vapor deposition apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic view showing a first embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a second embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.
  • FIG. 4 is a schematic view showing a third embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.
  • Fig. 5 is a schematic view showing a fourth embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.
  • Fig. 6 is a schematic view showing a fifth embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.
  • Fig. 7 is a schematic view showing a sixth embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of a physical vapor deposition apparatus according to another embodiment of the present invention.
  • FIG. 9a to 9c are schematic views of variable reactance members in the physical vapor deposition apparatus shown in Fig. 8. among them:
  • reaction chamber 1 1 base
  • valve 142 air source 144 conduit 2 backplane
  • Connected should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or it can be Indirectly connected through an intermediate medium, which may be internal communication between the two components.
  • the specific meaning of the above terms in the present invention can be understood in a specific case by those skilled in the art.
  • the "first” or “lower” feature of the first feature may include direct contact between the first feature and the second feature, and may also include the first and second features not being in direct contact but passing between them. Additional feature contact.
  • the basic principle of the present invention is to change the existing RF access mode, that is, to change the feed electrode structure of the present invention (which will be described in detail below), without affecting the arrangement of the magnetron drive components.
  • the effects of magnetron drive components are minimized.
  • uniform sputtering of the target is achieved to the utmost by using a distribution ring RF feedthrough.
  • a physical vapor deposition apparatus 100 for sputtering a sputtering target 200 and depositing the sputtered target material is performed according to an embodiment of the present invention. Wafer or substrate (not shown).
  • the physical vapor deposition apparatus 100 may include a reaction chamber 1 , a back plate 2 , a substrate supporting member 3 , a shield cover 4 , a magnetron 5 , a radio frequency feeding component 61 , and RF power source 62.
  • the top of the reaction chamber 1 is open and the bottom is formed with an opening 110, and the reaction chamber 1 is grounded.
  • the bottom surface of the backing plate 2 forms the top wall 22 of the reaction chamber 1.
  • the sputtering target 200 is disposed on the top wall 22. In practical applications, the sputtering target 200 and the backing plate 2 can be fixedly connected by welding. And the two are conductive.
  • the backing plate 2 is provided at the top of the reaction chamber 1 through the insulating member 21 and closes the top of the reaction chamber 1.
  • the substrate supporting member 3 is for placing a substrate, and is inserted into the reaction chamber 1 through the opening 110 to be disposed opposite to the sputtering target 200 by a sheet (not shown).
  • the substrate supporting member 3 may be an electrostatic chuck.
  • the reaction chamber 1 further includes a base 11 and a side wall 12, wherein the opening 110 is formed on the base 11, and the base 11 is grounded.
  • the side wall 12 is disposed on the base 11, and the reaction chamber 1 is defined by the base 11 and the side wall 12, wherein the insulating member 21 is disposed between the top of the side wall 12 and the back plate 2, so that the back plate 2 and the reaction chamber 1 is electrically insulated to insulate the sputtering target 200 fixed on the backing plate 2 from the ground.
  • the shield case 4 is made of a metal material and is disposed above the back plate 2 for shielding electromagnetic waves, wherein the shield case 4 and the back plate 2 define a shield space 40.
  • the RF feed member 61 is disposed in the shield case 4 and connected to the shield case 4, and the lower end of the RF feed member 61 is connected to the edge of the back plate 2.
  • the RF power source 62 is coupled to the RF feedthrough 61 via the RF matcher 63 to transmit RF power to the backplane 2, i.e., to feed RF power to the backplane 2, thereby coupling to the sputter target 200.
  • the RF matcher 63 can maximize the RF power to the RF feed component 61.
  • a magnetron 5 is disposed within the shielded space 40 and at the top of the backplane 2.
  • a gas source 142 supplies a process gas, such as argon, one or more oxygen-containing gases or a nitrogen-containing gas, into the reaction chamber 1, which is capable of reacting with the sputter material to form a film layer on the substrate.
  • the reacted process gas and reaction by-products are discharged from the reaction chamber 1 by a vacuum pump (not shown).
  • a process gas e.g., argon
  • a gas source 142 e.g., argon
  • the RF power source 62 applies RF power to the sputtering target through the RF matching unit 63 and the RF feed unit 61.
  • argon gas in the reaction chamber 1 is excited into a plasma, and a negative bias is generated on the sputtering target 200.
  • the negative bias attracts argon ions to bombard the sputtering target 200, thereby sputtering the material of the sputtering target 200 and depositing it on the substrate or wafer on the substrate supporting member 3.
  • the reaction chamber 1 can be controlled by a controller (not shown) which is typically designed to control the reaction chamber 1 and typically includes a central processing unit (central proc es sing unit, CPU) (not shown), memory (not shown), and supporting circuits (i.e., I/O) (not shown).
  • the CPU can be any type of computer processor for use in an industrial environment for controlling various system functions, substrate movement, etc., and monitoring processes (eg, substrate support component temperature, chamber process time) , I/O signals, etc.).
  • the memory is connected to the CPU, and the memory may be one or more memories that are easily available, such as random access memory (RAM), read only memory (ROM), floppy disk, Hard disk, or any other form of digital storage, local or remote storage.
  • Software instructions and data can be encoded and stored in memory for instructing the CPU to operate.
  • the physical vapor deposition apparatus 100 further includes: a DC power source (ie, a DC power source) 71.
  • the DC power source 71 is disposed near the shield case 4, and is connected to the backplane 2 through a DC connection bar (not shown).
  • a DC power source 71 is disposed near the shield case 4, and is connected to the backplane 2 through a DC connection bar (not shown).
  • DC power and the radio frequency power source 62 simultaneously apply DC power and radio frequency (RF) power to the sputtering target 200 to generate a higher density plasma, thereby clearly
  • the target voltage is reduced, thereby reducing the damage to the substrate or the wafer, and the high particle flux caused by the high-density plasma significantly increases the deposition rate, thereby improving the process efficiency.
  • RF radio frequency
  • the penetration of the material is enhanced, so that it can be used not only for sputtering a conventional Cu target but also It is used for sputtering a target for forming an ITO or AZO film, thereby expanding the range of application materials of the physical vapor phase device 100.
  • the physical vapor deposition apparatus 100 when used to sputter an ITO target, the content of tin oxide in the target may be from 0.1% to 20%.
  • the physical vapor deposition apparatus 100 further includes: a radio frequency filter 72 disposed between the direct current power source 71 and the radio frequency feed unit 61 for filtering radio frequency power. Therefore, under the premise of ensuring the normal transmission of the DC power, the RF power is filtered from the DC loop between the DC power source 71 and the RF feed component 61 to prevent the RF voltage from causing damage to the DC power source 71.
  • the frequency of the RF power source 62 can be 2 MHz, 13.56 MHz or
  • the RF power can be less than 3000 watts (W).
  • the DC bias of the substrate on the substrate supporting member 3 can be adjusted by adjusting the ratio of the RF power of the RF power source 62 to the DC power of the DC power source 71, such as an RF power source.
  • the RF power of 62 is 600 W
  • the DC power of DC power supply 71 is 100 W.
  • the bias voltage on the substrate is substantially zero, thereby avoiding damage to the substrate.
  • the substrate supporting member 3 can be electrically suspended. In another example of the present invention, the substrate supporting member 3 can be grounded. In still another embodiment of the present invention, the physical vapor deposition apparatus 100 further includes an electrode 91 and a radio frequency power source 92. As shown in FIG. 1, the electrode 91 is connected to the substrate supporting member 3, and the RF power source 92 is connected through the matching unit 93. At the electrode 91, radio frequency power is transmitted to the substrate supporting member 3, thereby generating a radio frequency bias.
  • the RF power source 62 is coupled to the RF feedthrough 61 via the RF matcher 63 to transfer RF power to the edge of the backplane 2.
  • the RF matcher 63 can maximize the RF power to the RF feedthrough 61 and on the other hand can isolate other power sources (eg, DC power) that may be connected to the Sputter target 200 to the RF matcher 63 itself and Damage to the RF power source 62.
  • DC power e.g, DC power
  • the RF power emitted by the RF power source 62 can only be input from the non-central axis position of the sputtering target 200, which results in uneven RF feed, which in turn affects the plasma distribution ultimately generated in the reaction chamber 1. Uniformity.
  • the present invention adopts the feeding mode of the distribution ring 611, and achieves the shooting through the distribution ring 611.
  • the frequency feed is changed from point feed to surface feed, thereby achieving the purpose of uniform RF feed.
  • the radio frequency feeding member 61 includes a distribution ring 611 and a plurality of distribution bars 612 disposed along the circumferential interval of the distribution ring 611, and the distribution ring 611 passes
  • the RF matcher 63 is coupled to the RF power source 62, such as shown in FIG.
  • Each distribution ring 611 is coupled to the backing plate 2 via a distribution strip 612 for coupling to a sputtering target (not shown).
  • the projected shape of the distribution ring 611 in its radial section can be configured to be circular to achieve uniform distribution of RF power.
  • the RF feed can be performed by means of a multilayer distribution ring 611.
  • the RF feed component 61 can include a plurality of distribution rings 611 (FIG. 3 shows a two-layer distribution ring 611).
  • the plurality of distribution rings 611 are parallel to each other and are spaced apart along the axial direction Y of the distribution ring 611.
  • the adjacent two distribution rings 611 are connected by a distribution bar 612, and the distribution ring 611 closest to the sputtering target 200
  • the distribution bar 612 is coupled to the backing plate 2 to be coupled to a sputtering target (not shown).
  • the RF power When the RF power is fed in, the RF power is first input to the uppermost distribution ring 611, and then the RF power is sequentially fed from the top to the bottom through the distribution bar 612 to the distribution ring 611 located below the uppermost distribution ring 611, thereby
  • the "bird's nest"-like RF feed structure can be used to distribute the RF power multiple times compared to the conventional cylindrical feed structure, so that the RF feed can be more uniform.
  • the RF power since the RF power is distributed multiple times through the "bird's nest” structure, the RF power distribution can be made more uniform, which is caused by the fact that the transmission of RF power over a short distance is high because of high frequency components.
  • the RF power can reach the sputtering target (not shown) even after reaching the backing plate 2, so as to ensure uniform sputtering of the sputtering target, thereby avoiding the standing wave effect.
  • the electrode structure of the present invention does not affect the arrangement of the magnetron driving components as compared with the conventional structure in which the radio frequency power is applied by the structure of the conductive hollow cylinder at the center of the sputtering target.
  • the effects of magnetron drive components are minimized.
  • uniform sputtering of the sputtering target is maximally achieved without affecting the existing design.
  • the projection shape of the distribution ring 611 in its radial direction is formed into a rectangular shape.
  • the projection shape of the distribution ring 611 in its radial section may also be formed into a circular shape (as shown in FIG. 2), a ring shape or a number of sides more than three. Any shape such as an edge polygon may be employed as long as a circumferential ring structure capable of performing RF power distribution, and may of course preferably be circular.
  • the number of distribution bars 612 between adjacent two distribution rings 611 and the number of distribution bars 612 between the distribution ring 611 closest to the sputtering target and the sputtering target may be mutually different. As shown in Fig. 3, the number of distribution bars 612 located between the uppermost distribution ring 611 and the lowermost distribution ring 611 is different from the number of distribution bars 612 located between the lowermost distribution ring 611 and the backing plate 2. It should be noted that the number of the distribution bars 612 is not limited as long as the RF power can be evenly distributed.
  • the area surrounded by the plurality of distribution rings 611 may be increased in the vertical direction (ie, the axial direction of the distribution ring) and toward the sputtering target (not shown), that is, the closer to the splash The area enclosed by the distribution ring 611 of the target is larger.
  • the distribution of the radio frequency power is sequentially made uniform in the direction perpendicular to the sputtering target.
  • vertical direction herein refers to the direction in which the RF feeding member 61 is disposed on the backing plate 2, as shown in Fig. 3, the vertical direction is the axial direction Y of the distribution ring 611.
  • each of the layers includes at least three distribution strips 612 that are circumferentially distributed in a hook.
  • the distribution strip 612 is made of a metallic material, such as copper.
  • the distribution strip 612 can also be made of other metallic materials such as aluminum, silver, gold, stainless steel, alloys, and the like.
  • the width of the distribution strip 612 is greater than or equal to 5 mm and the thickness is greater than or equal to 0.1 mm.
  • the structure of the RF feed 61 will be further described below in conjunction with FIG. 4 shows the structure of the RF feedthrough 61 having a distribution ring 611.
  • the projection shape of the distribution ring 611 in its radial cross section is formed into a rectangular shape, and the radio frequency feeding member 61 includes four strips uniformly distributed in the circumferential direction of the sputtering target (not shown).
  • Distribution bar 612, four distribution bars 612 The upper ends are respectively connected to the rectangular distribution ring 611, and the lower ends of the four distribution bars 612 are evenly and spacedly connected to the edge of the back plate 2.
  • the radio frequency power is transmitted to the distribution ring 611 through the RF matching unit 63, and is uniformly delivered to the backing plate 2 through the four distribution bars 612, and then transferred to the sputtering target, thereby generating a negative on the sputtering target. bias.
  • each of the distribution strips 612 has two distribution sections 6121 and one connection section 6122, wherein the connection section 6122 is connected between the two distribution sections 6121 and extends along a plane parallel to the distribution ring 611. And the two ends of the connecting section 6122 are respectively connected to one end of the two distributing sections 6121; the other end of the distributing section 6121 near the distributing ring 611 is connected to the distributing ring 611; the other end of the distributing section 6121 near the sputtering target 200 is opposite to the back Board 2 is connected.
  • the connecting portion 6122 can also extend obliquely upward or downward with respect to the plane of the distribution ring 611, that is, the extending direction of the connecting portion 6122 is at an acute angle to the plane of the distribution ring 611, as long as the two ends thereof can be adjacent to each other.
  • the two allocation segments can be connected.
  • the plurality of distribution sections 6121 may extend in parallel with each other in the axial direction (i.e., the vertical direction) of the distribution ring 611 and toward the sputtering target (not shown).
  • the plurality of distribution sections 6121 may also extend obliquely outward or inward toward the direction of the sputtering target with respect to the axial direction of the distribution ring 611, that is, the distribution section 6121
  • the extending direction is an acute angle to the axial direction of the distribution ring 611.
  • each of the distribution bars 612 may also have three or more distribution segments 6121, and the number of connection segments 6122 is correspondingly multiple, and each connection segment The two ends of the 6122 are connected between the two adjacent distribution sections 6121 and extend along a plane parallel to the distribution ring 611.
  • the connection section 6122 can also be inclined upward or downward with respect to the plane of the distribution ring 611.
  • the other end of the distribution section 6121 closest to the distribution ring 611 is connected to the distribution ring 611; the other end of the distribution section 6121 closest to the backing plate 2 is connected to the sputtering target 200.
  • each of the distribution bars 612 may also adopt a continuous structure without segmentation, and a plurality of distribution bars 612 are directed toward the sputtering target along the axial direction of the distribution ring 611 (not shown) The directions extend parallel to each other.
  • each of the distribution bars 612 may also extend obliquely outward or inward from the direction of the distribution ring 611 toward the sputtering target with respect to the axial direction of the distribution ring 611.
  • the physical vapor deposition apparatus 100 further includes a variable reactance component 8, and as shown in FIG. 8, the variable reactance component 8 is connected in series between the substrate supporting member 3 and the ground for adjustment.
  • the DC bias of the substrate is a variable capacitor (as shown in Figure 9a), a variable inductor (as shown in Figure 9b), or a parallel circuit of a variable capacitor and inductor (as shown in Figure 9c).
  • the potential of the substrate on the radio frequency circuit can be adjusted by adding the variable reactance member 8 thereto, thereby adjusting The DC bias of the substrate.
  • the variable reactance component 8 is a variable capacitor
  • PF picofarad
  • the bombardment of the surface of the substrate can be adjusted by controlling the ground reactance of the electrode, thereby affecting the step coverage and the properties of the deposited film, such as grain size and film stress. , crystal orientation, film density, roughness and film composition. Therefore, the variable reactance component 8 can be used to change the deposition rate, the etching rate, and the like. In one embodiment, the variable reactance component 8 can be deposited or etched, or prevented from being deposited or etched, by appropriately adjusting the ground reactance of the electrode/substrate.
  • the variable capacitor 610 is set to adjust the ground impedance, thus adjusting the interaction between the ions in the plasma and the substrate during processing.
  • the process of the physical vapor deposition apparatus is described below with reference to FIG. 1 and FIG. 8 , wherein the RF power source 62 and the DC power source 71 collectively apply power to the sputtering target 200 as an example. Be explained. At this point, the combination of RF and DC power sources allows for lower overall RF power to be used during processing compared to RF power only, which helps to reduce plasma damage to the substrate to improve the device. Production. Of course, it is also possible to apply RF power to the sputtering target 200 alone using only the RF power source 62.
  • the supply of process gas from gas source 142 to reaction chamber 1 is controlled by valve 141, such as by argon gas supplied via conduit 144.
  • the RF power source 62 applies RF power to the sputtering target 200 through the RF feeding component 61 to excite the argon gas in the reaction chamber 1 into a plasma; at the same time, the DC power source 71 will The DC power is also transmitted to the sputtering target 200 through the RF feed member 61, thereby generating a negative bias on the sputtering target 200.
  • the radio frequency feeding component 61 of the present invention adopts a "bird's nest"-like radio frequency feeding structure, it can distribute the radio frequency power multiple times, so that the radio frequency power and the direct current voltage can be uniformly applied to the sputtering target 200, Thereby producing a higher density plasma, and since the sheath bias of the plasma is inversely proportional to its density, the negative bias generated on the target is significantly reduced, thereby reducing the substrate or wafer. The resulting damage, in addition, the high particle throughput of the high-density plasma significantly increases the deposition rate, thereby increasing process efficiency.
  • the above-described negative bias voltage loaded on the sputtering target 200 can attract argon ions to bombard the sputtering target 200, sputter the material of the sputtering target 200, and deposit it on the substrate on the substrate supporting member 3, thereby Complete the process.
  • the substrate supporting member is adjusted by adjusting the ratio of the RF power of the RF power source 62 to the DC power of the DC power source 71 (as shown in FIG. 1) or by the variable reactance component 8 (as shown in FIG. 8). 3 DC bias on the substrate.

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Abstract

本发明公开了一种物理气相沉积装置，包括：反应腔室；基片支撑部件，所述基片支撑部件设置在所述反应腔室的底部且与所述溅射靶材相对；直流电源，所述直流电源耦接于所述溅射靶材；射频电源，所述射频馈入部件耦接于所述溅射靶材，所述射频馈入部件包括分配环和沿所述分配环的周向间隔设置的多条分配条，所述分配环与所述射频电源耦接，所述分配环通过所述分配条耦接至所述溅射靶材。根据本发明实施例的物理气相沉积装置，降低了在靶材上产生的负偏压，进而减小了对基片或晶圆产生的损伤，且明显提高了沉积速率，从而提高了工艺效率。

Description

物理气相沉积装置 技术领域
本发明涉及半导体制造技术领域， 特别是涉及一种物理气相沉积装置。 背景技术
在物理气相沉积 (Physical Vapor Deposition, PVD)溅射工艺设备中， 通 常在溅射靶材上施加负偏压， 以将反应腔内的例如 Ar (氩气）等的工艺气 体激发为等离子体， 并吸引等离子体中的离子轰击靶材， 从而使靶材材料溅 射下来， 并沉积在晶圆或基片上。 不同的应用领域（例如半导体、 太阳能、 发光二极管 (light emitting diode, LED)等）通常对溅射电压、 溅射速率等工 艺参数的要求也不同。 特别是对于太阳能、 LED 等领域应用的氧化铟锡 (indium tin oxide, ITO)、 氧化 4吕锌 (aluminum zinc oxide, AZO)等导电膜层而 言，会要求使用较低的溅射电压，以保证溅射沉积的薄膜有较好的工艺性能。
如前所述，在传统的物理气相沉积装置中，直流电源将直流功率施加至 靶材上， 以将气体激发为等离子体， 并在靶材上产生负偏压， 以吸引等离子 体中的离子轰击靶材，从而使溅射下来的靶材材料沉积在由基座承载的基片 上。 然而， 传统的物理气相沉积装置对于一些特殊应用领域（如 LED领域 的 ITO溅射等）会带来较大的问题。 首先， 直流溅射会在靶材上产生很大的 电压， 例如约几百伏， 并且在基片表面产生例如约几十伏的较大直流偏压。 对于 LED领域的 ITO溅射等， 高的靶材电压或较大的直流偏压均会对基片 或晶圆产生损伤。 此外， 在一定的直流（direct current , D C)功率下， 由于直流溅射所产生的等离子体密度较低， 会导致较低的沉积速率。
为了解决溅射偏压过大的问题，目前在本领域中开始采用在靶材上同时 加载射频和直流的方式进行溅射。例如，在中国专利申请 No.200980143935.2 中， 射频功率通过筒状电极馈入靶材上。 但是， 由于该筒状电极与包围件的 外壁存在较大的耦合电容， 这使得部分射频功率因该耦合电容而流失， 甚至 使等离子体难以形成辉光放电， 并导致射频功率的浪费。 发明内容
本发明旨在至少解决现有技术中存在的技术问题之一。
为此，本发明的一个目的在于提出一种物理气相沉积装置，所述物理气 相沉积装置通过改变电极结构可以在不影响磁控管驱动部件的布局的情况 下， 实现对靶材的均勾溅射。
本发明实施例提供的物理气相沉积装置包括：反应腔室，其包含有顶壁、 溅射靶材及基片支撑部件， 所述溅射靶材与所述顶壁邻近， 所述基片支撑部 件设置在所述反应腔室中且与所述溅射靶材相对； 直流电源， 所述直流电源 耦接于所述溅射靶材； 射频电源， 所述射频电源的输出端与射频匹配器和射 频馈入部件顺次连接，所述射频馈入部件包括分配环和沿所述分配环的周向 间隔设置的多条分配条， 所述分配环通过所述分配条耦接于所述溅射靶材， 所述射频馈入部件通过所述分配环耦接于所述射频电源。
本发明实施例提供的物理气相沉积装置，其通过改变馈入电极结构， 实 现在不影响磁控管驱动部件的布置的前提下对磁控管驱动部件的影响降到 最低。 此外， 通过采用分配环形的射频馈入部件， 最大程度地实现了对靶材 的均匀溅射。
另外， 根据本发明的物理气相沉积装置还具有如下附加技术特征： 根据本发明的一个实施例，所述分配环为多个， 多个所述分配环彼此平 行且沿所述分配环的轴向间隔设置，相邻的两个分配环之间通过所述分配条 相连。
根据本发明的一个实施例，所述分配环在其径向截面上的投影形状为圆 形。
根据本发明的一个实施例，所述多条分配条沿所述分配环的周向均匀分 布。
根据本发明的一个实施例， 所述分配条的横截面的宽度大于或等于
5mm, 且厚度大于或等于 0.1mm。
根据本发明的一个实施例， 所述射频馈入部件由铜、 银或金制成。
根据本发明的一个实施例，每条所述分配条具有至少两条分配段，并且 在相邻的两条分配段之间连接有连接段。
根据本发明的一个实施例， 所述分配段沿所述分配环的轴向延伸。
根据本发明的一个实施例，所述分配段相对于所述分配环的轴向向内或 向外倾斜地延伸。
根据本发明的一个实施例，所述连接段沿平行于所述分配环所在平面延 伸。
根据本发明的一个实施例，所述连接段相对于所述分配环所在平面向上 或向下倾斜地延伸。
根据本发明的一个实施例， 所述射频电源的频率介于 2MHz至 27.12 MHz之间， 更具体地为 2MHz、 13.56 MHz或 27.12 MHz。
根据本发明的一个实施例，该物理气相沉积装置还包括：可变电抗部件， 所述可变电抗部件串联在所述基片支撑部件与地之间，用以调节基片的直流 偏压。
根据本发明的一个实施例，所述可变电抗部件为可变电容、可变电感或 由可变电容和电感组成的电路。
根据本发明的一个实施例， 所述溅射靶材为金属氧化物靶材。
根据本发明的一个实施例， 所述金属氧化物靶材为氧化铟锡 (indium tin oxide, ITO)把材、 氧化铝锌 (aluminum zinc oxide, AZO)把材。
根据本发明的一个实施例，所述氧化铟锡靶材中氧化锡相对于整体氧化 铟锡的含量为 0.1%至 20%。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的 描述中变得明显， 或通过本发明的实践了解到。 附图说明
本发明的上述和 /或附加的方面和优点从结合下面附图对实施例的描述 中将变得明显和容易理解， 其中：
图 1为本发明一个实施例提供的物理气相沉积装置的示意图。
图 2 为本发明实施例提供的物理气相沉积装置中电极的第一实施例的 示意图。
图 3 为本发明实施例提供的物理气相沉积装置中电极的第二实施例的 示意图。
图 4 为本发明实施例提供的物理气相沉积装置中电极的第三实施例的 示意图。
图 5 为本发明实施例提供的物理气相沉积装置中电极的第四实施例的 示意图。
图 6 为本发明实施例提供的物理气相沉积装置中电极的第五实施例的 示意图。
图 7 为本发明实施例提供的物理气相沉积装置中电极的第六实施例的 示意图。
图 8为本发明另一个实施例提供的物理气相沉积装置的示意图。
图 9a至 9c为图 8所示的物理气相沉积装置中的可变电抗部件的示意 图。 其中：
1 反应腔室 1 1 底座
1 1 0 开口 12 侧壁
141 阀 门 142 气源 144 导管 2 背板
21 绝缘部件 22 顶壁
3 基片 支撑部件
4 屏蔽罩 40 屏蔽空间
5 磁控管
61 射频馈入部件 610 可变电容器
611 分配环 612 分配条
6121 分配段 6122 连接段
62 射频电源 63 射频匹配器
71 直 ¾1电源 72 射频滤波器
8 可变电抗部件
91 电极 92 射频电源
93 匹配器
100 物理气相沉积装置 200 溅射靶材
Y 轴向 具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中 的组件。 下面通过参考附图描述的实施例是示例性的， 仅用于解释本发明， 而不能理解为对本发明的限制。
在本发明的描述中， 需要理解的是， 术语 "上"、 "下"、 "左"、 "右"、 "顶"、 "底"、 "内"、 "外"等指示的方位或位置关系为基于附图所示的方位 或位置关系， 仅是为了便于描述本发明和筒化描述， 而不是指示或暗示所指 的装置或组件必须具有特定的方位、 以特定的方位构造和操作， 因此不能理 解为对本发明的限制。 此外， 术语 "第一，，、 "第二，，仅用于描述目的， 而不 能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由 此， 限定有 "第一，，、 "第二" 的特征可以明示或者隐含地包括一个或者更多 个该特征。
需要说明的是， 除非本说明书中另有明确的规定和限定， 术语 "安装"、
"相连，，、 "连接"应做广义理解， 例如， 可以是固定连接， 也可以是可拆卸 连接，或一体地连接； 可以是机械连接，也可以是电连接； 可以是直接相连， 也可以通过中间媒介间接相连， 可以是两个组件内部的连通。对于本领域的 普通技术人员而言， 可以具体情况理解上述术语在本发明中的具体含义。 另 外在本发明中， 除非另有明确的规定和限定， 第一特征在第二特征之 "上" 或之 "下"可以包括第一和第二特征直接接触， 也可以包括第一和第二特征 不是直接接触而是通过它们之间的另外的特征接触。
本发明的基本原理在于，通过改变现有的射频接入方式， 即改变本发明 的馈入电极结构 （将在下面进行详细说明）， 实现在不影响磁控管驱动部件 的布置的前提下对磁控管驱动部件的影响降到最低。 此外， 通过使用分配环 形射频馈入部件， 最大程度地实现了对靶材的均匀溅射。 下面将对本发明进 行详细的说明。 物理气相沉积装置
下面参考附图详细描述本发明的上述原理。如图 1中所示，根据本发明 实施例的一种物理气相沉积装置 100, 该物理气相沉积装置 100用于对溅射 靶材 200进行溅射，并将溅射下来的靶材材料沉积到晶圆或基片（图未示出） 上。
如图 1所示，本发明实施例提供的物理气相沉积装置 100可以包括反应 腔室 1、 背板 2、 基片支撑部件 3、 屏蔽罩 4、 磁控管 5、 射频馈入部件 61、 和射频电源 62。 反应腔室 1的顶部敞开且底部形成有开口 110, 且该反应腔室 1接地。 背板 2的底面形成反应腔室 1的顶壁 22, 溅射靶材 200设置在该顶壁 22上， 在实际应用中， 溅射靶材 200与背板 2可以采用焊接的方式固定连 接， 且二者是导通的。 背板 2通过绝缘部件 21设在反应腔室 1的顶部且封 闭反应腔室 1的顶部。基片支撑部件 3用于放置基片， 且通过开口 110伸入 反应腔室 1内以 片 （未示出）与溅射靶材 200相对设置。 可选地， 基片 支撑部件 3可以为静电卡盘。
可选地， 如图 1所示， 反应腔室 1还包括底座 11和侧壁 12, 其中开口 110形成在底座 11上， 且底座 11接地。 侧壁 12设在底座 11上， 反应腔室 1由底座 11和侧壁 12限定出， 其中绝缘部件 21设在侧壁 12的顶部与背板 2之间， 以使背板 2与反应腔室 1之间电绝缘， 从而使固定在背板 2上的溅 射靶材 200与地绝缘。
如图 1所示， 屏蔽罩 4由金属材料制成， 其设在背板 2的上方， 用以屏 蔽电磁， 其中屏蔽罩 4与背板 2限定出屏蔽空间 40。 射频馈入部件 61设在 屏蔽罩 4内且与该屏蔽罩 4相连， 射频馈入部件 61的下端连接至背板 2的 边缘。
射频电源 62通过射频匹配器 63连接至射频馈入部件 61 , 以将射频功 率传输至背板 2, 即， 将射频功率馈入背板 2, 从而耦接于溅射靶材 200。 射频匹配器 63可将射频功率最大化地传送至射频馈入部件 61。 射频馈入部 件 61的结构将在下面参照附图 2-6进行更为详细的说明。
如图 1所示， 磁控管 5设在屏蔽空间 40内且位于背板 2的顶部。 气源 142向反应腔室 1内提供工艺气体， 例如氩气、 一种或多种含氧气体或含氮 气体， 该工艺气体能够与溅射材料反应以在基片上形成膜层。反应后的工艺 气体和反应副产物通过真空泵（未示出）排出反应腔室 1。
在工作时， 由气源 142向反应腔室 1内通入工艺气体（例如氩气）， 射 频电源 62将射频功率通过射频匹配器 63和射频馈入部件 61施加至溅射靶 材 200上， 以将反应腔室 1内的氩气激发为等离子体， 且在溅射靶材 200上 产生负偏压。该负偏压会吸引氩离子轰击溅射靶材 200,从而将溅射靶材 200 的材料溅射下来， 并沉积在基片支撑部件 3上的基片或晶圆上。
如图 1所示， 反应腔室 1可以由控制器（未示出）控制， 该控制器通常 设计成用于控制反应腔室 1 , 且通常包括中央处理单元（c entral proc es sing unit , CPU) (未示出）、存储器（未示出）和支持电路 (即 I/O) (未示出）。 CPU可为任何类型的计算机处理器， 该计算机处理器用于工业 环境， 该工业环境用于控制各种系统功能、 基片移动等， 以及监测工艺（例 如基片支撑部件的温度、 腔室工艺时间、 I/O信号等）。 存储器连接至 CPU, 且存储器可为易于获得的一个或多个存储器，该存储器诸如随机存取存储器 (random ac c es s memory , RAM)、只读存储器 (re ad only memory , ROM) , 软盘、 硬盘、 或任何其它形式的数字储存器、 本地或远程储存器。 软件指令和数据可被编码并被存储在存储器中， 用于指令 CPU进行操作。
如图 1所示， 物理气相沉积装置 100还包括： 直流电源 （即 DC电源） 71 , 直流电源 71设置在屏蔽罩 4附近， 并通过 DC连接条 (图未示出）连 接至背板 2, 以向溅射靶材 200施加 DC功率。 在进行工艺的过程中， 通过 直流电源 71与射频电源 62同时将 DC功率和射频（radi o frequency , RF)功率加载至溅射靶材 200上， 可以产生较高密度的等离子体， 从而明显 地降低了靶材电压， 进而减小了对基片或晶圆可能造成的损伤， 而且高密度 的等离子体带来的高粒子通量，明显提高了沉积速率，从而提高了工艺效率。
此外， 由于采用这种双源结构 （同时使用直流电源 71与射频电源 62 ) 的物理气相装置 100, 这使得材料的穿透力增强， 从而不仅可以用于溅射传 统的 Cu靶材， 而且可以用于溅射用于形成 ITO或者 AZO薄膜的靶材， 从 而扩大了该物理气相装置 100的应用材料范围。
需要附加说明的是，当根据本发明实施例的物理气相沉积装置 100用于 溅射 ITO靶材时， 靶材中氧化锡的含量可以从 0.1%至 20%。 如图 1所示， 物理气相沉积装置 100还包括： 射频滤波器 72, 射频滤 波器 72设在直流电源 71与射频馈入部件 61之间用于过滤射频功率。由此， 在保证 DC功率正常输送的前提下， 将射频功率从直流电源 71与射频馈入 部件 61之间的 DC回路上过滤掉， 防止射频电压对直流电源 71造成损坏。
在上述的实施例中， 射频电源 62的频率可以为 2MHz、 13.56 MHz或
27.12 MHz等高频频率， 射频功率可以小于 3000瓦（W)。
可选地， 在本发明的一个实施例中， 可以通过调整射频电源 62的射频 功率和直流电源 71的 DC功率的比例， 来调节基片支撑部件 3上基片的直 流偏压， 例如射频电源 62的射频功率为 600W, 直流电源 71的 DC功率为 100W, 此时基片上的偏压基本为 0, 从而避免基片受到损伤。
在本发明的一个示例中，基片支撑部件 3可电位悬浮。在本发明的另一 个示例中， 基片支撑部件 3可接地。 而在本发明的再一个实施例中， 物理气 相沉积装置 100还包括电极 91和射频电源 92, 如图 1所示， 电极 91连接 至基片支撑部件 3上， 射频电源 92通过匹配器 93连接在电极 91以将射频 功率传输至基片支撑部件 3, 从而产生射频偏压。
电极结构
下面将对上述的射频馈入部件 61的电极结构进行详细说明。如上所述， 射频电源 62通过射频匹配器 63连接至射频馈入部件 61以将射频功率传输 至背板 2的边缘。 射频匹配器 63—方面可将射频功率最大化地传送至射频 馈入部件 61 ,另一方面可以隔离可能连接在溅射靶材 200上的其它电源（例 如直流电源）对射频匹配器 63本身和射频电源 62的损害。 由于在溅射靶材 200的中轴线所在位置处， 通常由例如磁控管驱动部件（图未示）等其它零 部件所占据。 因此， 由射频电源 62发出的射频功率只能从溅射靶材 200的 非中轴线的位置处输入， 这导致射频馈入的不均匀， 进而影响最终在反应腔 室 1内产生的等离子体分布均匀性。
为此， 本发明是采用分配环 611的馈入方式，通过分配环 611实现了射 频馈入由点馈入变为面馈入， 进而达到射频均匀馈入的目的。
在本发明的一个实施例中， 如图 2至图 7中所示， 射频馈入部件 61包 括分配环 611和沿该分配环 611的周向间隔设置的多条分配条 612, 分配环 611通过射频匹配器 63与射频电源 62耦接，例如图 2所示。每个分配环 611 通过分配条 612与背板 2连接， 从而耦接于溅射靶材（图未示）。 如图 2所 示， 该分配环 611在其径向截面上的投影形状可以构造成圆形， 以实现均匀 地分配 RF射频功率。
当然， 为了在反应腔室 1内产生更加均匀的等离子体，可以采用多层分 配环 611的方式进行射频馈入。 如图 3中所示， 射频馈入部件 61可以包括 多个分配环 611 (图 3显示了两层分配环 611 )。该多个分配环 611彼此平行， 且沿分配环 611的轴向 Y间隔设置，相邻的两个分配环 611之间通过分配条 612相连， 并且， 距溅射靶材 200最近的分配环 611通过分配条 612与背板 2连接， 从而耦接于溅射靶材 (图未示）。
在进行射频功率馈入时， 射频功率首先输入至最上层的分配环 611 , 然 后通过分配条 612由上至下依次将射频功率馈入位于最上层分配环 611下方 的分配环 611 , 由此， 本发明中 "鸟巢" 状的射频馈入结构与传统的圆筒状 馈入结构相比， 可以对射频功率进行多次分配， 从而可以使射频馈入得更加 均匀。 此外， 由于通过该 "鸟巢" 状结构对射频功率进行多次分配， 可以使 得射频功率分配更加均匀，这与传统的在较短的距离上传输射频功率因为高 频成分较多的缘故所导致的驻波效应相比，可以使射频功率在到达背板 2后 即可均匀地到达溅射靶材（图未示）上， 以保证溅射靶材均匀溅射， 从而可 以避免驻波效应。
需要说明的是，与传统的通过在溅射靶材的中心采用导电中空圆筒的结 构来施加射频功率的结构相比，本发明的电极结构不会影响磁控管驱动部件 的布置， 从而对磁控管驱动部件的影响降到最低。 此外， 在不影响现有设计 的情况下， 最大程度地实现了对溅射靶材的均匀溅射。 在本发明的一个示例中， 如图 3所示， 分配环 611在其径向（垂直于分 配环的轴向的方向）截面上的投影形状形成为矩形。 当然， 本发明并不限于 此， 在本发明的其它示例中， 分配环 611在其径向截面上的投影形状也可形 成为圆形 （如图 2所示）、 环形或边数多于三边的多边形等任意形状， 只要 能进行射频功率分配的周向环形结构均可以被采用， 当然优选地可以为圆 形。
根据本发明的一个实施例， 相邻的两个分配环 611 之间的分配条 612 的数量以及距离溅射靶材最近的分配环 611与溅射靶材之间的分配条 612的 数量可以彼此不同。如图 3所示，位于最上层分配环 611和最下层分配环 611 之间的分配条 612的数目不同于位于最下层分配环 611和背板 2之间的分配 条 612的数目。 需要说明的是， 分配条 612的数目只要能实现射频功率的均 匀分配即可， 并没有特定的限制。
进一步地，如图 3所示， 多个分配环 611各自包围的面积可以沿垂直方 向（即， 分配环的轴向）且朝向溅射靶材（图未示）依次增加， 即， 越靠近 溅射靶材的分配环 611包围的面积越大。 由此， 使得在垂直方向且朝向溅射 靶材的方向上，射频功率的分配依次变得均匀。需要说明的是，此处术语"垂 直方向" 指的是射频馈入部件 61设置在背板 2上的方向， 如图 3所示， 垂 直方向为分配环 611的轴向 Y。
在本发明的一些示例中，每一层均包括在周向上均勾分布的至少三条分 配条 612。 可选地， 分配条 612由金属材料制成， 例如铜。 当然， 分配条 612 还可以由其它金属材料制成， 例如铝、 银、 金、 不锈钢、 合金等。 优选地， 分配条 612的宽度大于或等于 5mm, 且厚度大于或等于 0.1mm。
下面结合图 4对射频馈入 61的结构进行进一步说明。 其中图 4显示了 具有一层分配环 611的射频馈入部件 61的结构。 在如图 4所示的示例中， 分配环 611在其径向截面上的投影形状形成为矩形， 且射频馈入部件 61包 括沿溅射靶材（图未示）的周向均匀分布的四条分配条 612,四条分配条 612 的上端分别与矩形的分配环 611相连接， 而四条分配条 612的下端均匀且间 隔地连接在背板 2的边缘。 由此， 射频功率通过射频匹配器 63传输至分配 环 611 , 且通过四条分配条 612均匀地输送至背板 2上， 然后被传递至溅射 靶材上， 从而在溅射靶材上产生负偏压。
下面将以图 3至图 7为例对分配条 612的示例性结构进行说明。如图 4 所示， 每条分配条 612具有两条分配段 6121和一条连接段 6122, 其中， 该 连接段 6122连接在两条分配段 6121之间，且沿平行于分配环 611所在平面 延伸， 并且连接段 6122的两端分别与两条分配段 6121的一端相连； 靠近分 配环 611的分配段 6121的另一端与分配环 611相连； 靠近溅射靶材 200的 分配段 6121的另一端与背板 2相连。 可选的， 连接段 6122还可以相对于分 配环 611所在平面向上或向下倾斜地延伸， 即， 连接段 6122的延伸方向与 分配环 611所在平面呈锐角，只要其两端能够分别与相邻的两条分配段连接 即可。
根据本发明的一个实施例， 多条分配段 6121可以沿分配环 611的轴向 (即， 垂直方向）且朝向溅射靶材 (图未示）的方向彼此平行地延伸。 可选 地， 如图 5、 6所示， 多条分配段 6121也可以相对于分配环 611的轴向， 朝 向溅射靶材的方向向外或者向内倾斜地延伸， 即， 分配段 6121的延伸方向 与分配环 611的轴向呈锐角。
根据本发明的一个实施例，如图 7中所示，每条所述分配条 612也可以 具有三条及以上的分配段 6121 , 此时连接段 6122的数量相应的为多条， 每 条连接段 6122的两端连接在相邻的两个分配段 6121之间，且沿平行于分配 环 611所在平面延伸， 可选的， 连接段 6122还可以相对于分配环 611所在 平面向上或向下倾斜地延伸； 最靠近分配环 611的分配段 6121的另一端与 分配环 611相连； 最靠近背板 2的分配段 6121的另一端与溅射靶材 200相 连。通过上述分配条 612的具体结构， 可以进一步提升射频功率的分配均匀 性。 当然，在实际应用中，每条分配条 612也可以不进行分段而采用连续结 构， 并且， 多条分配条 612沿分配环 611的轴向自分配环 611朝向溅射靶材 (图未示）的方向彼此平行地延伸。 但是， 需要说明的是， 每条分配条 612 也可以相对于分配环 611的轴向， 自分配环 611朝向溅射靶材的方向向外或 向内倾斜地延伸。
可变电抗调节
下面将结合图 8对本发明提供的物理气相沉积装置 100的下电极的可变 电抗调节结构进行说明。 在本发明的一个实施例中， 物理气相沉积装置 100 还包括可变电抗部件 8, 如图 8所示， 可变电抗部件 8串联在基片支撑部件 3与地之间， 用以调节基片的直流偏压。 具体地， 可变电抗部件 8为可变电 容（如图 9a所示）、 可变电感 （如图 9b所示）或可变电容与电感的并联电 路（如图 9c所示）。 此时， 由于基片支撑部件 3上的基片 （未示出）是等离 子体负载的一部分，通过在其上添加可变电抗部件 8可调节基片在射频回路 上的电位， 由此调节了基片的直流偏压。 例如， 当可变电抗部件 8为可变电 容时， 可采用电容大约为 300皮法拉（pic o farad , PF ) , 从而使得基片 上直流偏压为 0。
需要说明的是，在物理气相沉积装置 100中，可以通过控制电极的接地 电抗来调整基片表面的轰击， 进而影响阶梯覆盖率和沉积膜的性质等， 该性 质包括诸如晶粒尺寸、薄膜应力、 晶体取向、薄膜密度、粗糙度和薄膜组分。 因此，可变电抗部件 8可用来改变沉积速率、蚀刻速率等。在一个实施例中， 通过适当调整电极 /基片的接地电抗， 可变电抗部件 8 能够进行沉积或者蚀 刻， 或者防止沉积或蚀刻。 可变电容器 610的设定是用来调整接地阻抗， 于 是调整在处理期间等离子体中的离子与基片之间的相互作用。
工艺过程
下面参考图 1和图 8描述本发明实施例提供的物理气相沉积装置的工艺 过程，其中以射频电源 62和直流电源 71共同向溅射靶材 200施加功率为例 进行说明。 此时， 相较于仅有 RF功率而言， RF和 DC功率源的结合使得在 处理期间能够使用较低的整体 RF功率， 这样有助于减小等离子体对基片的 破坏， 以提高器件的产量。 当然， 也可仅使用射频电源 62单独向溅射靶材 200施加射频功率。
在工作时，通过阀门 141来控制从气源 142至反应腔室 1的工艺气体的 供给， 例如通过导管 144供给氩气。 此时， 射频电源 62将射频功率通过射 频馈入部件 61将射频功率施加至溅射靶材 200上， 以将反应腔室 1内的氩 气激发为等离子体； 与此同时， 直流电源 71将 DC功率也通过射频馈入部 件 61传递至溅射靶材 200上， 由此在溅射靶材 200上产生负偏压。 由于本 发明的射频馈入部件 61采用 "鸟巢" 状的射频馈入结构， 其可以对射频功 率进行多次分配， 这使得射频功率和直流电压能够均勾地施加到溅射靶材 200上， 从而可产生较高密度的等离子体， 而且， 由于等离子体的鞘层偏压 与其密度成反比， 因此明显地降低了在靶材上产生的负偏压， 进而减小了对 基片或晶圆造成的损伤， 此外， 高密度的等离子体带来的高粒子通量， 明显 提高了沉积速率， 从而提高了工艺效率。
加载在溅射靶材 200 上的上述负偏压可以吸引氩离子轰击溅射靶材 200, 将溅射靶材 200的材料溅射下来， 并沉积在基片支撑部件 3上的基片 上， 从而完成工艺。
此时，通过调整射频电源 62的射频功率和直流电源 71的 DC功率的比 例 （如图 1所示）， 或者通过可变电抗部件 8 (如图 8所示）， 来调节基片支 撑部件 3上基片的直流偏压。
根据本发明实施例的物理气相沉积装置的其它构成以及操作对于本领 域普通技术人员而言都是已知的， 这里不再详细描述。
在本说明书的描述中，参考术语"一个实施例"、 "一些实施例"、 "示意 性实施例"、 "示例"、 "具体示例"、 或 "一些示例" 等的描述意指结合该实 施例或示例描述的具体特征、 结构、材料或者特点包含于本发明的至少一个 实施例或示例中。在本说明书中， 对上述术语的示意性表述不一定指的是相 同的实施例或示例。 而且， 描述的具体特征、 结构、 材料或者特点可以在任 何的一个或多个实施例或示例中以合适的方式结合。
尽管已经示出和描述了本发明的实施例，本领域的普通技术人员可以理 解： 在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变 化、 修改、 替换和变型， 本发明的范围由权利要求及其等同物限定。

Claims

权 利 要 求 书
1、 一种物理气相沉积装置， 包括：
反应腔室， 其包含有顶壁、 溅射靶材及基片支撑部件， 所述溅射靶材与 所述顶壁邻近，所述基片支撑部件设置在所述反应腔室中且与所述溅射靶材 相对；
直流电源， 所述直流电源耦接于所述溅射靶材；
射频电源，所述射频电源的输出端与射频匹配器和射频馈入部件顺次连 接，所述射频馈入部件包括分配环和沿所述分配环的周向间隔设置的多条分 配条， 所述分配环通过所述分配条耦接于所述溅射靶材， 所述射频馈入部件 通过所述分配环耦接于所述射频电源。
2、 根据权利要求 1所述的物理气相沉积装置， 其特征在于， 所述分配 环为多个， 多个所述分配环彼此平行且沿所述分配环的轴向间隔设置， 相邻 的两个分配环之间通过所述分配条相连。
3、 根据权利要求 1所述的物理气相沉积装置， 其特征在于， 所述分配 环在其径向截面上的投影形状为圆形。
4、 根据权利要求 1所述的物理气相沉积装置， 其特征在于， 所述分配 条的横截面的宽度大于或等于 5mm, 且厚度大于或等于 0.1mm。
5、 根据权利要求 1所述的物理气相沉积装置， 其特征在于， 所述射频 馈入部件由铜、 银或金制成。
6、 根据权利要求 1-5任一项所述的物理气相沉积装置， 其特征在于， 每条所述分配条具有至少两条分配段，并且在相邻的两条分配段之间连接有 连接段。
7、 根据权利要求 6所述的物理气相沉积装置， 其特征在于， 所述分配 段沿所述分配环的轴向延伸。
8、 根据权利要求 6所述的物理气相沉积装置， 其特征在于， 所述分配 段相对于所述分配环的轴向向内或向外倾斜地延伸。
9、 根据权利要求 6所述的物理气相沉积装置， 其特征在于， 所述连接 段沿平行于所述分配环所在平面延伸。
10、根据权利要求 6所述的物理气相沉积装置， 其特征在于， 所述连接 段相对于所述分配环所在平面向上或向下倾斜地延伸。
11、根据权利要求 1所述的物理气相沉积装置， 其特征在于， 所述射频 电源的频率为介于 2MHz至 27.12 MHz之间。
12、 根据权利要求 1所述的物理气相沉积装置， 其特征在于， 还包括： 可变电抗部件， 所述可变电抗部件串联在所述基片支撑部件与地之间， 用以调节基片的直流偏压。
13、 根据权利要求 12所述的物理气相沉积装置， 其特征在于， 所述可 变电抗部件为可变电容、 可变电感或由可变电容和电感组成的电路。
14、根据权利要求 1所述的物理气相沉积装置， 其特征在于， 所述溅射 靶材为金属氧化物靶材。
15、 根据权利要求 14所述的物理气相沉积装置， 其特征在于， 所述金 属氧化物靶材为氧化铟锡、 氧化铝锌靶材。
16、 根据权利要求 15所述的物理气相沉积装置， 其特征在于， 所述氧 化铟锡靶材中氧化锡的含量为 0.1%至 20%。
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